CN117175909B - Intelligent PFC module of single power switch IGBT - Google Patents
Intelligent PFC module of single power switch IGBT Download PDFInfo
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- CN117175909B CN117175909B CN202311442877.1A CN202311442877A CN117175909B CN 117175909 B CN117175909 B CN 117175909B CN 202311442877 A CN202311442877 A CN 202311442877A CN 117175909 B CN117175909 B CN 117175909B
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Abstract
The invention relates to the technical field of integrated circuits, in particular to an intelligent PFC module of a single power switch IGBT, which comprises the IGBT and a driving module, wherein the driving module is electrically connected with the IGBT, and the driving module is internally provided with: the control signal processing submodule generates a driving signal; the fault logic control submodule receives protection action signals of a plurality of fault protection submodules and generates a fault feedback signal; the VDD end of the driving sub-module is externally connected with a positive voltage supply and is used for respectively generating positive on voltage and negative off voltage according to a preset voltage value when receiving a driving signal and a fault feedback signal, when the fault feedback signal is at a high level, if the driving signal is at a low level, the negative off voltage is output, if the driving signal is at a high level, the positive on voltage is output, and when the fault feedback signal is at a low level, the negative off voltage is output; therefore, the single power supply can realize the functions of positive voltage conduction and negative voltage shutoff of the IGBT, meanwhile, the internal fault protection is considered, and the positive voltage value and the negative voltage value can be preset conveniently.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to an intelligent PFC module of a single power switch IGBT.
Background
The english for PFC is all called "Power Factor Correction", meaning "power factor correction", power factor refers to the relationship between the effective power and the total power consumption (apparent power), i.e. the ratio of the effective power divided by the total power consumption (apparent power). Basically, the power factor can measure the extent to which power is effectively utilized, and when the power factor value is larger, it represents the higher power utilization rate. At present, industrial and consumer electronic control PFC (power factor correction) has started to adopt a discrete intelligent PFC module, the intelligent PFC module integrates a rectifier bridge, an IGBT, a driving IC (integrated circuit) and other modules, a circuit is relatively complex, when the intelligent PFC module adopts 15V on-state and 0V off-state of the IGBT, the 0V off-state can cause the problem that the IGBT is subjected to parasitic on-state (namely parasitic on-state caused by Miller capacitance effect, the parasitic on-state is caused by voltage change rate duCE/dt between a collector and an emitter, or parasitic on-state is caused by stray inductance of the emitter, and the parasitic on-state is caused by change rate diL/dt. of load current), so that a series of subsequent circuit problems caused by turn-off loss and incapacity of accurate turn-off are caused, and the existing solution is that the IGBT is turned off through negative voltage.
The current solution is as follows: firstly, the power supply is powered by adopting a +15V power supply and a-10V power supply, and the power supply +15V power supply output or the-10V power supply output is controlled by following a driving PWM signal, so that the intelligent PFC module can realize the switch control of the IGBT; and secondly, two groups of diodes and capacitors with opposite polarities to that of the single power supply are utilized, the charging directions of the two groups of capacitors are different according to the unidirectional conductivities of the diodes, and the positive and negative poles at the two ends of the last two groups of capacitors are different, so that the single power supply can output positive and negative voltages.
Wherein: method one, although the current solution can solve the parasitic turn-on problem, the difficulty of power supply design is increased: firstly, the design difficulty of changing a single power supply into a double power supply is increased; secondly, the design cost is increased; thirdly, increasing the power of the power supply is unfavorable for energy conservation, environmental protection and control of temperature rise; fourthly, the whole area of the electric control part is increased; in the second method, a certain time is required for charging and discharging of the capacitor, so that the on and off of the IGBT are inconsistent with the PWM signal, the control difficulty of the positive and negative voltage conversion moment is increased when the PWM is used as a driving signal, and the complex integrated circuit environment of the intelligent PFC module cannot be compatible.
Disclosure of Invention
Aiming at the defects, the invention aims to provide an intelligent PFC module of a single power switch IGBT, which can realize positive voltage on and negative voltage off of the IGBT function by a single power supply, simultaneously give consideration to internal fault protection, and can conveniently preset a positive voltage value and a negative voltage value.
To achieve the purpose, the invention adopts the following technical scheme:
the intelligent PFC module of the single power switch IGBT comprises the IGBT and a driving module, wherein the PFCOUT end of the driving module is electrically connected with the grid electrode of the IGBT, and the driving module comprises a driving sub-module, a fault logic control sub-module, a control signal processing sub-module and a plurality of fault protection sub-modules; the VDD end of the driving sub-module is used as the VDD port of the driving module, the GND end of the driving sub-module is used as the GND port of the driving module, and the OUT end of the driving sub-module is used as the PFCOUT port of the driving module;
the IN end of the driving sub-module is electrically connected with the output end of the control signal processing sub-module, the F end of the driving sub-module is electrically connected with the output end of the fault logic control sub-module, and a plurality of input ends of the fault logic control sub-module are respectively electrically connected with the output ends of a plurality of fault protection sub-modules;
the control signal processing sub-module is used for externally connecting an input signal and generating a driving signal;
the fault logic control submodule is used for receiving protection action signals of a plurality of fault protection submodules and generating a fault feedback signal; the fault feedback signal is low when one or more protection action signals are received, and is high when the protection action signals are not received;
the VDD end of the driving sub-module is externally connected with a positive voltage power supply and is used for respectively generating a positive on voltage and a negative off voltage according to a preset voltage value when receiving the driving signal and the fault feedback signal; when the fault feedback signal is at a high level, outputting the negative turn-off voltage if the driving signal is at a low level, and outputting the positive turn-on voltage if the driving signal is at a high level; when the fault feedback signal is low, the negative off voltage is output.
Further, the driving sub-module comprises a rapid judging unit, a selecting unit and an output unit; the input end of the quick judging unit is used as the IN end of the driving sub-module, the fault feedback end of the quick judging unit is used as the F end of the driving sub-module, the VDD end of the quick judging unit is used as the VDD end of the driving sub-module, the GND end of the quick judging unit is used as the GND end of the driving sub-module, and the output end of the output unit is used as the OUT end of the driving sub-module;
the output end of the quick judging unit is electrically connected with the input end of the selecting unit, the VDD end of the quick judging unit is electrically connected with the VDD end of the selecting unit, the GND end of the quick judging unit and the GND end of the selecting unit are electrically connected with the GND end of the output unit, and the output end of the selecting unit is electrically connected with the input end of the output unit;
the rapid judging unit is used for receiving the driving signal and the fault feedback signal and generating a selection level; when the fault feedback signal is at a high level, if the driving signal is at a low level, the selection level is at a low level, and if the driving signal is at a high level, the selection level is at a high level; when the fault feedback signal is at a low level, the selection level is at a low level;
the selection unit is used for receiving the selection level and generating a positive pressure output signal and a negative pressure output signal; outputting the positive voltage output signal when the selection level is a high level; outputting the negative pressure output signal when the selection level is a low level;
the output unit is used for receiving the positive voltage output signal or the negative voltage output signal and respectively generating the positive on voltage or the negative off voltage according to the preset voltage value; outputting the positive turn-on voltage when the positive voltage output signal is received; and outputting the negative turn-off voltage when the negative pressure output signal is received.
Further, the output unit comprises a resistor RG, a positive-negative voltage conversion circuit and a voltage preset circuit; one end of the resistor RG is used as an input end of the output unit, one end of the voltage preset circuit is used as an output end of the output unit, and the other end of the voltage preset circuit is used as a GND end of the output unit;
the other end of the resistor RG is electrically connected with the input end of the positive-negative voltage conversion circuit, and the output end of the positive-negative voltage conversion circuit is electrically connected with one end of the voltage preset circuit;
the positive-negative voltage conversion circuit is used for receiving the positive-voltage output signal or the negative-voltage output signal; when the positive voltage output signal is received, the positive-negative voltage conversion circuit is short-circuited, and the voltage preset circuit outputs the positive conducting voltage according to the preset voltage value; when the negative pressure output signal is received, the input end of the positive-negative pressure conversion circuit is positive, the output end of the positive-negative pressure conversion circuit is negative, and the voltage preset circuit outputs the negative turn-off voltage according to the preset voltage value.
Further, the fast judging unit comprises a NAND gate U1, an NPN triode Q1, a resistor R2 and an accelerating circuit; the first input end of the nand gate U1 is used as an input end of the fast judging unit, the second input end of the nand gate U1 is used as a fault feedback end of the fast judging unit, one end of the resistor R2 is used as a VDD end of the fast judging unit, the emitter of the NPN transistor Q1 is used as a GND end of the fast judging unit, and the collector of the NPN transistor Q1 is used as an output end of the fast judging unit;
the output end of the NAND gate U1 is electrically connected with one end of the accelerating circuit, the other end of the accelerating circuit is electrically connected with the base electrode of the NPN triode Q1, and the collector electrode of the NPN triode Q1 is electrically connected with the other end of the resistor R2;
the acceleration circuit is used for accelerating the on or off of the NPN triode Q1.
Further, the selection unit comprises a resistor R3, an NPN triode Q2 and a PNP triode Q3; the collector of the NPN triode Q2 is used as the VDD end of the selection unit, the base of the NPN triode Q2 is used as the input end of the selection unit, the emitter of the NPN triode Q2 is used as the output end of the selection unit, and the collector of the PNP triode Q3 is used as the GND end of the selection unit;
one end of the resistor R3 is electrically connected with the collector of the NPN triode Q2, the other end of the resistor R3 and the base of the PNP triode Q3 are electrically connected with the base of the NPN triode Q2, and the emitter of the PNP triode Q3 is electrically connected with the emitter of the NPN triode Q2.
Further, the positive-negative voltage conversion circuit comprises a resistor R4 and a capacitor C2; one end of the resistor R4 is used as an input end of the positive-negative voltage conversion circuit, and the other end of the resistor R4 is used as an output end of the positive-negative voltage conversion circuit;
one end of the resistor R4 is electrically connected with one end of the capacitor C2, and the other end of the resistor R4 is electrically connected with the other end of the capacitor C2.
Further, the voltage preset circuit comprises a voltage stabilizing tube DZ1 and a voltage stabilizing tube DZ2; the cathode of the voltage stabilizing tube DZ1 is used as one end of the voltage preset circuit, and the cathode of the voltage stabilizing tube DZ2 is used as the other end of the voltage preset circuit;
the anode of the voltage stabilizing tube DZ1 is electrically connected with the anode of the voltage stabilizing tube DZ 2.
Further, the accelerating circuit comprises a resistor R1 and a capacitor C1; one end of the resistor R1 is used as one end of the accelerating circuit, and the other end of the resistor R1 is used as the other end of the accelerating circuit;
one end of the resistor R1 is electrically connected with one end of the capacitor C1, and the other end of the resistor R1 is electrically connected with the other end of the capacitor C1.
The technical scheme provided by the invention can comprise the following beneficial effects:
1. the driving sub-module is used as a core control module for controlling the IGBT switch, so that the intelligent PFC module can correspondingly output positive on voltage and negative off voltage along with the high and low levels of a driving signal (namely PWM signal) only by connecting a power supply (taking +15V as an example) through a VDD port, the additional arrangement of the power supply can be avoided, the design difficulty of an external power supply circuit and the area of an electric control part are reduced, and the energy conservation and consumption reduction are realized.
2. The values of the positive on voltage and the negative off voltage can be freely set through the driving sub-module according to specific application conditions, are not limited to be determined by the power supply voltage, and can support more application expansion.
3. The driving sub-module also gives consideration to the fault judgment in the driving module, and when the fault occurs, the IGBT is turned off in time, so that larger and more faults are avoided, and the driving sub-module is an execution end of the fault protection capability of the driving module.
Drawings
Fig. 1 is a schematic diagram of a smart PFC module of a single power switch IGBT according to one embodiment of the present invention.
Fig. 2 is a schematic diagram of the drive module shown in fig. 1.
Fig. 3 is a circuit diagram of the drive sub-module shown in fig. 2.
Wherein: the device comprises a driving module 1, a driving sub-module 2, a fault logic control sub-module 3, a control signal processing sub-module 4, a fault protection sub-module 5, a quick judging unit 21, a selecting unit 22, an output unit 23, a positive-negative voltage converting circuit 231, a voltage presetting circuit 232, a resistor RG, a NAND gate U1, an NPN triode Q1, a resistor R2, an accelerating circuit 211, a resistor R3, an NPN triode Q2, a PNP triode Q3, a resistor R4, a capacitor C2, a voltage stabilizing tube DZ1, a voltage stabilizing tube DZ2, a resistor R1 and a capacitor C1.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of embodiments of the present invention, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, the meaning of "plurality" is two or more, unless explicitly defined otherwise.
In describing embodiments of the present invention, it should be noted that the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be either fixedly coupled, detachably coupled, or integrally coupled, for example, unless otherwise indicated and clearly defined; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the embodiments of the present invention can be understood by those of ordinary skill in the art according to specific circumstances.
An intelligent PFC module of a single power switch IGBT according to an embodiment of the present invention is described below with reference to fig. 1 to 3.
The intelligent PFC module of the single power switch IGBT comprises the IGBT and a driving module 1, wherein the PFCOUT end of the driving module 1 is electrically connected with the grid electrode of the IGBT, and the driving module 1 comprises a driving sub-module 2, a fault logic control sub-module 3, a control signal processing sub-module 4 and a plurality of fault protection sub-modules 5; the VDD terminal of the driving sub-module 2 is used as the VDD port of the driving module 1, the GND terminal of the driving sub-module 2 is used as the GND port of the driving module 1, and the OUT terminal of the driving sub-module 2 is used as the PFCOUT port of the driving module 1;
the IN end of the driving sub-module 2 is electrically connected with the output end of the control signal processing sub-module 4, the F end of the driving sub-module 2 is electrically connected with the output end of the fault logic control sub-module 3, and a plurality of input ends of the fault logic control sub-module 3 are respectively electrically connected with the output ends of a plurality of fault protection sub-modules 5;
the control signal processing sub-module 4 is used for externally connecting an input signal and generating a driving signal;
the fault logic control sub-module 3 is configured to receive protection action signals of the plurality of fault protection sub-modules 5, and generate a fault feedback signal; the fault feedback signal is low when one or more protection action signals are received, and high when no protection action signals are received;
the VDD end of the driving sub-module 2 is externally connected with a positive voltage power supply and is used for respectively generating a positive on voltage and a negative off voltage according to a preset voltage value when receiving a driving signal and a fault feedback signal; when the fault feedback signal is at a high level, if the driving signal is at a low level, a negative turn-off voltage is output, and if the driving signal is at a high level, a positive turn-on voltage is output; when the fault feedback signal is low, a negative off voltage is output.
In the preferred embodiment of the intelligent PFC module with the single power switch IGBT, as shown in fig. 1 and 2, the driving sub-module 2 is taken as a core control module for controlling the IGBT switch, so that the intelligent PFC module can correspondingly output positive on voltage and negative off voltage along with high and low levels of a driving signal (namely PWM signal) only by connecting a power supply (taking +15V as an example) through a VDD port, thereby reducing the design difficulty and the area of an electric control part of an external power supply circuit, saving energy and reducing consumption. The values of the positive on voltage and the negative off voltage can be freely set through the driving sub-module 2 according to specific application conditions, are not limited to be determined by the power supply voltage, and can support more application expansion. More importantly, the driving sub-module 2 also takes account of fault judgment in the driving module 1, the fault feedback signal represents the internal fault condition of the driving module 1, the F end of the driving sub-module 2 is used as a receiving port of the fault feedback signal, when faults occur, the IGBT is turned off in time, larger and more faults are avoided, and the driving sub-module is an executing end of the fault protection capability of the driving module 1. The intelligent PFC module has the characteristics, so that the expansion circuit of the intelligent PFC module is simpler, more stable, safer and more energy-saving and can be applied to more scenes.
It should be noted that the internal circuit judgment logic of the driving sub-module 2 is designed based on the positive voltage power supply, so that the VDD end of the driving sub-module 2 needs to be externally connected with the positive voltage power supply, the logic judgment sequence of the internal circuit is ensured to be correct, the disorder of logic judgment is avoided, the switching on of the IGBT by outputting the positive on voltage and the switching off of the IGBT by outputting the negative off voltage by a single power supply can not be realized, the normal working voltage (such as +15v) of the intelligent PFC module can be directly selected, the additional setting of the power supply can be avoided, and the energy consumption is effectively saved.
Further, the driving sub-module 2 includes a quick judgment unit 21, a selection unit 22, and an output unit 23; the input terminal of the quick determination unit 21 is used as the IN terminal of the driving sub-module 2, the fault feedback terminal of the quick determination unit 21 is used as the F terminal of the driving sub-module 2, the VDD terminal of the quick determination unit 21 is used as the VDD terminal of the driving sub-module 2, the GND terminal of the quick determination unit 21 is used as the GND terminal of the driving sub-module 2, and the output terminal of the output unit 23 is used as the OUT terminal of the driving sub-module 2;
the output end of the quick judging unit 21 is electrically connected with the input end of the selecting unit 22, the VDD end of the quick judging unit 21 is electrically connected with the VDD end of the selecting unit 22, the GND end of the quick judging unit 21 and the GND end of the selecting unit 22 are electrically connected with the GND end of the output unit 23, and the output end of the selecting unit 22 is electrically connected with the input end of the output unit 23;
the fast judging unit 21 is used for receiving the driving signal and the fault feedback signal and generating a selection level; when the fault feedback signal is at a high level, if the driving signal is at a low level, the selection level is at a low level, and if the driving signal is at a high level, the selection level is at a high level; when the fault feedback signal is at a low level, selecting the level to be at a low level;
the selection unit 22 is configured to receive the selection level and generate a positive pressure output signal and a negative pressure output signal; outputting a positive voltage output signal when the selected level is high; when the selected level is a low level, outputting a negative pressure output signal;
the output unit 23 is configured to receive the positive voltage output signal or the negative voltage output signal, and generate a positive on voltage or a negative off voltage according to a preset voltage value; when a positive voltage output signal is received, outputting a positive conducting voltage; when a negative pressure output signal is received, a negative off voltage is output.
In this embodiment, as shown in fig. 3, the driving sub-module 2 processes the driving signal from the control signal processing sub-module 4 and the fault feedback signal from the fault logic control sub-module 3 through the fast judging unit 21, and sets the fault feedback signal as a priority, when there is a fault in the driving module 1 (i.e. when the fault feedback signal is at a low level), the selection level is kept continuously at the low level to control the subsequent circuit to drive the IGBT to turn off, so that the IGBT and the subsequent circuit are protected in time, and the intelligent PFC module has fault protection capability; otherwise, when the driving module 1 operates normally (i.e. when the fault feedback signal is at a high level), the selection level then outputs a high level or a low level correspondingly along with the driving signal, and drives the subsequent circuit to turn on or off the IGBT, so that the driving module 1 can accurately follow the externally connected driving signal (such as PWM waveform) to synchronously control the switching of the IGBT, and the control precision of the IGBT is further improved due to the rapidity of the rapid judging unit 21, and the delay is avoided, and the error exists between the rapid judging unit and the driving signal timing sequence.
Next, the selection unit 22 performs selection of the voltage channel corresponding to the selection level, which is the determination result of the fast determination unit 21, to generate the corresponding voltage signal and voltage value by selectively turning on the corresponding voltage channel driving output unit 23. Specifically, when the selection level is high, the selection unit 22 selects the positive on voltage channel to be turned on, and drives the output unit 23 to output the positive on voltage in the form of outputting a positive voltage output signal; when the selection level is a low level, the selection unit 22 selects the negative off voltage channel to be turned on, and drives the output unit 23 to output a negative off voltage in the form of outputting a negative output signal.
Finally, the output unit 23 mainly forms a loop for generating a positive turn-on voltage or a negative turn-off voltage through the voltage channel built by the selection unit 22, and forms the positive turn-on voltage or the negative turn-off voltage correspondingly, and the voltage values of the positive turn-on voltage and the negative turn-off voltage can be preset through the internal circuit, so that the positive turn-on voltage and the negative turn-off voltage are not limited to a fixed value any more, and the voltage values of the positive turn-on voltage and the negative turn-off voltage can be changed according to the application scene of the intelligent PFC module so as to expand and optimize.
Further, the output unit 23 includes a resistor RG, a positive-negative voltage conversion circuit 231, and a voltage preset circuit 232; one end of the resistor RG is used as an input terminal of the output unit 23, one end of the voltage preset circuit 232 is used as an output terminal of the output unit 23, and the other end of the voltage preset circuit 232 is used as a GND terminal of the output unit 23;
the other end of the resistor RG is electrically connected with the input end of the positive-negative voltage conversion circuit 231, and the output end of the positive-negative voltage conversion circuit 231 is electrically connected with one end of the voltage preset circuit 232;
the positive-negative voltage conversion circuit 231 is configured to receive a positive-voltage output signal or a negative-voltage output signal; when the positive voltage output signal is received, the positive-negative voltage conversion circuit 231 is short-circuited, and the voltage preset circuit 232 outputs a positive conducting voltage according to a preset voltage value; when the negative pressure output signal is received, the input end of the positive-negative voltage conversion circuit 231 is positive, the output end is negative, and the voltage preset circuit 232 outputs a negative turn-off voltage according to a preset voltage value.
In the present embodiment, to realize the output of the two voltages of the positive on-voltage and the negative off-voltage by the single power supply and the provision of the voltage values by presetting them are mainly realized by the output unit 23. After the selection unit 22 makes a selection result and a voltage channel is correspondingly built, the output unit 23 realizes the overturn of the single power supply voltage direction through the positive-negative voltage conversion circuit 231, namely when the positive-negative voltage conversion circuit 231 receives a positive-voltage output signal, the positive-negative voltage conversion circuit 231 is in short circuit, the positive-voltage output signal is consistent with the power supply voltage and is in positive direction, the positive-voltage output signal is applied to two sides of the voltage preset circuit 232 in positive direction, and the driving voltage preset circuit 232 outputs positive conducting voltage according to a preset voltage value; when receiving the negative pressure output signal, the input end of the positive-negative voltage conversion circuit 231 is positive, the output end is negative, the positive-negative voltage conversion circuit 231 is used as a voltage source and is opposite to the power supply voltage, and is reversely applied to two sides of the voltage preset circuit 232, and the driving voltage preset circuit 232 outputs a negative turn-off voltage according to a preset voltage value; thereby realizing the power supply voltage inverting and assigning function of the output unit 23.
Further, the fast judging unit 21 includes a nand gate U1, an NPN transistor Q1, a resistor R2, and an accelerating circuit 211; the first input end of the nand gate U1 is used as the input end of the quick judging unit 21, the second input end of the nand gate U1 is used as the fault feedback end of the quick judging unit 21, one end of the resistor R2 is used as the VDD end of the quick judging unit 21, the emitter of the NPN transistor Q1 is used as the GND end of the quick judging unit 21, and the collector of the NPN transistor Q1 is used as the output end of the quick judging unit 21;
the output end of the NAND gate U1 is electrically connected with one end of the acceleration circuit 211, the other end of the acceleration circuit 211 is electrically connected with the base electrode of the NPN triode Q1, and the collector electrode of the NPN triode Q1 is electrically connected with the other end of the resistor R2;
the acceleration circuit 211 is used to accelerate the turn-on or turn-off of the NPN transistor Q1.
In this embodiment, the fast judging unit 21 uses the characteristic that the output end is clamped at the high level when the input end of the nand gate U1 has the low level, so that when the fault feedback signal is at the low level (i.e. the fault in the driving module 1) with priority, the NPN transistor Q1 can be clamped to output the high level and driven to be always turned on, and thus the low level is always output at the collector (i.e. the selected level is at the low level); when the fault feedback signal is at a high level (i.e. the driving module 1 has no fault), the second input end can be fixed at the high level by utilizing the characteristics of the NAND gate U1, and the output level is only determined by the level of the first input end, so that the purpose of following the driving signal is achieved; therefore, the driving sub-module 2 can judge the internal faults of the driving module 1 and implement the protection action under the condition of realizing the following of the control signals.
More importantly, when the NPN transistor Q1 receives the output signal of the nand gate U1 to turn on and off, the rising edge and the falling edge of the output pulse are both delayed from the rising edge and the falling edge of the driving signal (such as PWM waveform), which results in that the switching of the following IGBT is delayed, and precise control cannot be achieved, so that the output signal of the nand gate U1 can quickly turn on or off the NPN transistor Q1 by adding the accelerating circuit 211 to increase the excitation, thereby synchronizing the selection level and the rising edge and the falling edge of the driving signal.
Further, the selecting unit 22 includes a resistor R3, an NPN transistor Q2, and a PNP transistor Q3; the collector of NPN transistor Q2 is used as the VDD terminal of selection unit 22, the base of NPN transistor Q2 is used as the input terminal of selection unit 22, the emitter of NPN transistor Q2 is used as the output terminal of selection unit 22, and the collector of PNP transistor Q3 is used as the GND terminal of selection unit 22;
one end of the resistor R3 is electrically connected with the collector of the NPN triode Q2, the other end of the resistor R3 and the base of the PNP triode Q3 are electrically connected with the base of the NPN triode Q2, and the emitter of the PNP triode Q3 is electrically connected with the emitter of the NPN triode Q2.
In this embodiment, as shown in fig. 3, the selection unit 22 mainly includes an NPN transistor Q2 and a PNP transistor Q3 to form a selection circuit similar to a push-pull circuit. When the selection level is low, the NPN triode Q2 is turned off, the PNP triode Q3 is turned on, the selection unit 22 is grounded to form a negative turn-off voltage channel, and a negative pressure output signal is output to drive the output unit 23; when the selection level is high, the NPN transistor Q2 is turned on, the PNP transistor Q3 is turned off, the selection unit 22 is connected to the power supply to form a positive-on voltage channel, and the positive-voltage output signal is output to drive the output unit 23.
Further, the positive-negative voltage conversion circuit 231 includes a resistor R4 and a capacitor C2; one end of the resistor R4 is used as an input end of the positive-negative voltage conversion circuit 231, and the other end of the resistor R4 is used as an output end of the positive-negative voltage conversion circuit 231;
one end of the resistor R4 is electrically connected to one end of the capacitor C2, and the other end of the resistor R4 is electrically connected to the other end of the capacitor C2.
In this embodiment, as shown in fig. 3, the positive-negative voltage conversion circuit 231 is a charging circuit composed of a resistor R4 and a capacitor C2, and the positive-or reverse-applied voltage is correspondingly formed according to the output signal of the selection unit 22 by utilizing the characteristics of the charging circuit, so that the driving voltage preset circuit 232 correspondingly outputs the positive-on voltage or the negative-off voltage, thereby realizing the control of the voltage preset circuit 232 to finally output the positive voltage or the negative voltage by changing the direction of the applied voltage.
The conversion process of the positive-negative voltage conversion circuit 231 is as follows: when receiving the positive output signal, the NPN transistor Q2 is turned on, the PNP transistor Q3 is turned off, the input terminal of the positive-negative voltage conversion circuit 231 is connected to the power supply, the voltage at the two ends of the capacitor C2 cannot be suddenly changed, at this time, the voltage at the right end of the capacitor C2 is equal to the voltage at the left end of the capacitor C2 and equal to the input transient voltage, and the capacitor C2 cannot be charged instantaneously, so similar to a short circuit, the voltage is applied to the power supply voltage (i.e., VDD) in the positive direction by the voltage preset circuit 232, and then the capacitor C2 starts to be charged.
When receiving the negative output signal, the NPN transistor Q2 is turned off, the PNP transistor Q3 is turned on, the input terminal of the positive-negative voltage conversion circuit 231 is grounded, and the capacitor C2 is charged, so that the capacitor C2 can be used as a left-positive-right negative voltage source to supply power to the voltage preset circuit 232 alone, so that the voltage applied to the two ends of the voltage preset circuit 232 is opposite to the power supply voltage, and the voltage preset circuit 232 converts the output negative voltage.
Further, the voltage preset circuit 232 includes a regulator tube DZ1 and a regulator tube DZ2; the cathode of the voltage stabilizing tube DZ1 is used as one end of the voltage preset circuit 232, and the cathode of the voltage stabilizing tube DZ2 is used as the other end of the voltage preset circuit 232;
the anode of the regulator tube DZ1 is electrically connected with the anode of the regulator tube DZ 2.
In this embodiment, as shown in fig. 3, the voltage preset circuit 232 mainly comprises a voltage stabilizing tube DZ1 and a voltage stabilizing tube DZ2, and when the voltage is applied to the voltage preset circuit 232, the voltage preset circuit 232 is positive and negative, and the voltage preset circuit 232 outputs a preset voltage value which is the breakdown voltage of the voltage stabilizing tube DZ1 plus the on voltage of the voltage stabilizing tube DZ2 by utilizing the diode characteristics of the voltage stabilizing tube DZ1 and the voltage stabilizing tube DZ2; when the voltage applied to the voltage preset circuit 232 is the voltage when the positive-negative voltage conversion circuit 231 is used as the power source, the voltage preset circuit 232 is negative and positive from top to bottom, and the voltage preset circuit 232 outputs a preset voltage value of the on voltage of the voltage stabilizing tube DZ1 plus the breakdown voltage of the voltage stabilizing tube DZ 2. Assuming that the regulator tube DZ1 is a 14.3V silicon regulator tube and the regulator tube DZ2 is a 9.1V silicon regulator tube, when the power supply voltage is applied, the voltage value of the forward conduction voltage is v=14.3+0.7=15v, and +15v is output; when a voltage when the positive-negative voltage conversion circuit 231 is applied as a power source, the voltage value of the forward on voltage is v=0.7+9.1=9.8V, and-9.8V is output; therefore, the purpose of presetting positive on-voltage and negative off-voltage of different voltage values is achieved by selecting different types of voltage stabilizing tubes DZ1 and DZ2 to match.
Further, the acceleration circuit 211 includes a resistor R1 and a capacitor C1; one end of the resistor R1 serves as one end of the acceleration circuit 211, and the other end of the resistor R1 serves as the other end of the acceleration circuit 211;
one end of the resistor R1 is electrically connected to one end of the capacitor C1, and the other end of the resistor R1 is electrically connected to the other end of the capacitor C1.
In this embodiment, the acceleration circuit 211 is a differential circuit composed of a resistor R1 and a capacitor C1, and the process of turning on and off the NPN transistor Q1 is as follows: when the output end of the NAND gate U1 is from low level to high level, the voltage applied to the base electrode of the NPN triode Q1 generates a sharp pulse due to the action of the differential circuit, so that the current of the base electrode is very large, the speed of the NPN triode Q1 from cut-off to conduction is increased, and the time is shortened; then, the charging of the capacitor C1 is finished soon, and the voltage applied to the base electrode is smaller at the moment, so that the NPN triode Q1 is kept on; when the output end of the NAND gate U1 is from high level to low level, as the original voltage polarity on the capacitor C1 is positive and negative, the voltage is added to the base to be negative top pulse, so that the charge extraction from the base is quickened, the NPN triode Q1 is switched from saturation to cut off at a quicker speed, and the cut-off time of the NPN triode Q1 is shortened; thereby achieving synchronization of the select level with the rising and falling edges of the drive signal.
Other configurations and the like and operation of a smart PFC module of a single power switch IGBT according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description herein, reference to the term "embodiment," "example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (5)
1. The utility model provides an intelligent PFC module of single switch IGBT, includes IGBT and drive module, drive module's PFCOUT end with the grid electricity of IGBT is connected, its characterized in that: the driving module comprises a driving sub-module, a fault logic control sub-module, a control signal processing sub-module and a plurality of fault protection sub-modules; the VDD end of the driving sub-module is used as the VDD port of the driving module, the GND end of the driving sub-module is used as the GND port of the driving module, and the OUT end of the driving sub-module is used as the PFCOUT port of the driving module;
the IN end of the driving sub-module is electrically connected with the output end of the control signal processing sub-module, the F end of the driving sub-module is electrically connected with the output end of the fault logic control sub-module, and a plurality of input ends of the fault logic control sub-module are respectively electrically connected with the output ends of a plurality of fault protection sub-modules;
the control signal processing sub-module is used for externally connecting an input signal and generating a driving signal;
the fault logic control submodule is used for receiving protection action signals of a plurality of fault protection submodules and generating a fault feedback signal; the fault feedback signal is low when one or more protection action signals are received, and is high when the protection action signals are not received;
the VDD end of the driving sub-module is externally connected with a positive voltage power supply and is used for respectively generating a positive on voltage and a negative off voltage according to a preset voltage value when receiving the driving signal and the fault feedback signal; when the fault feedback signal is at a high level, outputting the negative turn-off voltage if the driving signal is at a low level, and outputting the positive turn-on voltage if the driving signal is at a high level; outputting the negative off voltage when the fault feedback signal is low;
the driving sub-module comprises a rapid judging unit, a selecting unit and an output unit; the input end of the quick judging unit is used as the IN end of the driving sub-module, the fault feedback end of the quick judging unit is used as the F end of the driving sub-module, the VDD end of the quick judging unit is used as the VDD end of the driving sub-module, the GND end of the quick judging unit is used as the GND end of the driving sub-module, and the output end of the output unit is used as the OUT end of the driving sub-module;
the output end of the quick judging unit is electrically connected with the input end of the selecting unit, the VDD end of the quick judging unit is electrically connected with the VDD end of the selecting unit, the GND end of the quick judging unit and the GND end of the selecting unit are electrically connected with the GND end of the output unit, and the output end of the selecting unit is electrically connected with the input end of the output unit;
the rapid judging unit is used for receiving the driving signal and the fault feedback signal and generating a selection level; when the fault feedback signal is at a high level, if the driving signal is at a low level, the selection level is at a low level, and if the driving signal is at a high level, the selection level is at a high level; when the fault feedback signal is at a low level, the selection level is at a low level;
the selection unit is used for receiving the selection level and generating a positive pressure output signal and a negative pressure output signal; outputting the positive voltage output signal when the selection level is a high level; outputting the negative pressure output signal when the selection level is a low level;
the output unit is used for receiving the positive voltage output signal or the negative voltage output signal and respectively generating the positive on voltage or the negative off voltage according to the preset voltage value; outputting the positive turn-on voltage when the positive voltage output signal is received; outputting the negative off voltage when the negative pressure output signal is received;
the output unit comprises a resistor RG, a positive-negative voltage conversion circuit and a voltage preset circuit; one end of the resistor RG is used as an input end of the output unit, one end of the voltage preset circuit is used as an output end of the output unit, and the other end of the voltage preset circuit is used as a GND end of the output unit;
the other end of the resistor RG is electrically connected with the input end of the positive-negative voltage conversion circuit, and the output end of the positive-negative voltage conversion circuit is electrically connected with one end of the voltage preset circuit;
the positive-negative voltage conversion circuit is used for receiving the positive-voltage output signal or the negative-voltage output signal; when the positive voltage output signal is received, the positive-negative voltage conversion circuit is short-circuited, and the voltage preset circuit outputs the positive conducting voltage according to the preset voltage value; when the negative pressure output signal is received, the input end of the positive-negative pressure conversion circuit is positive, the output end of the positive-negative pressure conversion circuit is negative, and the voltage preset circuit outputs the negative turn-off voltage according to the preset voltage value;
the selection unit comprises a resistor R3, an NPN triode Q2 and a PNP triode Q3; the collector of the NPN triode Q2 is used as the VDD end of the selection unit, the base of the NPN triode Q2 is used as the input end of the selection unit, the emitter of the NPN triode Q2 is used as the output end of the selection unit, and the collector of the PNP triode Q3 is used as the GND end of the selection unit;
one end of the resistor R3 is electrically connected with the collector of the NPN triode Q2, the other end of the resistor R3 and the base of the PNP triode Q3 are electrically connected with the base of the NPN triode Q2, and the emitter of the PNP triode Q3 is electrically connected with the emitter of the NPN triode Q2.
2. The intelligent PFC module of claim 1, wherein the single power switch IGBT comprises: the rapid judging unit comprises a NAND gate U1, an NPN triode Q1, a resistor R2 and an accelerating circuit; the first input end of the nand gate U1 is used as an input end of the fast judging unit, the second input end of the nand gate U1 is used as a fault feedback end of the fast judging unit, one end of the resistor R2 is used as a VDD end of the fast judging unit, the emitter of the NPN transistor Q1 is used as a GND end of the fast judging unit, and the collector of the NPN transistor Q1 is used as an output end of the fast judging unit;
the output end of the NAND gate U1 is electrically connected with one end of the accelerating circuit, the other end of the accelerating circuit is electrically connected with the base electrode of the NPN triode Q1, and the collector electrode of the NPN triode Q1 is electrically connected with the other end of the resistor R2;
the acceleration circuit is used for accelerating the on or off of the NPN triode Q1.
3. The intelligent PFC module of claim 1, wherein the single power switch IGBT comprises: the positive-negative voltage conversion circuit comprises a resistor R4 and a capacitor C2; one end of the resistor R4 is used as an input end of the positive-negative voltage conversion circuit, and the other end of the resistor R4 is used as an output end of the positive-negative voltage conversion circuit;
one end of the resistor R4 is electrically connected with one end of the capacitor C2, and the other end of the resistor R4 is electrically connected with the other end of the capacitor C2.
4. The intelligent PFC module of claim 1, wherein the single power switch IGBT comprises: the voltage preset circuit comprises a voltage stabilizing tube DZ1 and a voltage stabilizing tube DZ2; the cathode of the voltage stabilizing tube DZ1 is used as one end of the voltage preset circuit, and the cathode of the voltage stabilizing tube DZ2 is used as the other end of the voltage preset circuit;
the anode of the voltage stabilizing tube DZ1 is electrically connected with the anode of the voltage stabilizing tube DZ 2.
5. The intelligent PFC module of claim 2, wherein the single power switch IGBT comprises: the accelerating circuit comprises a resistor R1 and a capacitor C1; one end of the resistor R1 is used as one end of the accelerating circuit, and the other end of the resistor R1 is used as the other end of the accelerating circuit;
one end of the resistor R1 is electrically connected with one end of the capacitor C1, and the other end of the resistor R1 is electrically connected with the other end of the capacitor C1.
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103825436A (en) * | 2014-03-18 | 2014-05-28 | 无锡研奥电子科技有限公司 | High-speed large-current power field-effect transistor driving circuit |
JP2015208111A (en) * | 2014-04-21 | 2015-11-19 | ニチコン株式会社 | gate drive circuit |
CN105958802A (en) * | 2016-05-10 | 2016-09-21 | 深圳市航天新源科技有限公司 | High-power IGBT drive power supply circuit based on single power source |
KR20190108785A (en) * | 2018-03-15 | 2019-09-25 | 주식회사 만도 | Power source converter, apparatus for driving switching element and apparatus for driving load |
CN110501555A (en) * | 2019-08-22 | 2019-11-26 | 江阴市六和智能设备有限公司 | A kind of parallel IGBT delay current foldback circuit based on saturation voltage drop detection |
CN111293863A (en) * | 2020-03-25 | 2020-06-16 | 深圳市博敏电子有限公司 | Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof |
CN113507200A (en) * | 2021-08-20 | 2021-10-15 | 阳光电源股份有限公司 | Power converter and driving circuit thereof |
WO2022083475A1 (en) * | 2020-10-24 | 2022-04-28 | 卓捷创芯科技(深圳)有限公司 | Positive feedback latch amplitude-limitation control circuit for passive radio frequency identification tag, and method |
CN116169645A (en) * | 2023-02-10 | 2023-05-26 | 广东汇芯半导体有限公司 | Intelligent power module |
CN219181180U (en) * | 2022-12-06 | 2023-06-13 | 西安精华伟业电气科技有限公司 | Novel high-voltage high-current electric energy cut-off circuit |
-
2023
- 2023-11-02 CN CN202311442877.1A patent/CN117175909B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103825436A (en) * | 2014-03-18 | 2014-05-28 | 无锡研奥电子科技有限公司 | High-speed large-current power field-effect transistor driving circuit |
JP2015208111A (en) * | 2014-04-21 | 2015-11-19 | ニチコン株式会社 | gate drive circuit |
CN105958802A (en) * | 2016-05-10 | 2016-09-21 | 深圳市航天新源科技有限公司 | High-power IGBT drive power supply circuit based on single power source |
KR20190108785A (en) * | 2018-03-15 | 2019-09-25 | 주식회사 만도 | Power source converter, apparatus for driving switching element and apparatus for driving load |
CN110501555A (en) * | 2019-08-22 | 2019-11-26 | 江阴市六和智能设备有限公司 | A kind of parallel IGBT delay current foldback circuit based on saturation voltage drop detection |
CN111293863A (en) * | 2020-03-25 | 2020-06-16 | 深圳市博敏电子有限公司 | Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof |
WO2022083475A1 (en) * | 2020-10-24 | 2022-04-28 | 卓捷创芯科技(深圳)有限公司 | Positive feedback latch amplitude-limitation control circuit for passive radio frequency identification tag, and method |
CN113507200A (en) * | 2021-08-20 | 2021-10-15 | 阳光电源股份有限公司 | Power converter and driving circuit thereof |
CN219181180U (en) * | 2022-12-06 | 2023-06-13 | 西安精华伟业电气科技有限公司 | Novel high-voltage high-current electric energy cut-off circuit |
CN116169645A (en) * | 2023-02-10 | 2023-05-26 | 广东汇芯半导体有限公司 | Intelligent power module |
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