CN103825436A - High-speed large-current power field-effect transistor driving circuit - Google Patents
High-speed large-current power field-effect transistor driving circuit Download PDFInfo
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- CN103825436A CN103825436A CN201410099838.0A CN201410099838A CN103825436A CN 103825436 A CN103825436 A CN 103825436A CN 201410099838 A CN201410099838 A CN 201410099838A CN 103825436 A CN103825436 A CN 103825436A
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Abstract
The invention discloses a high-speed large-current power field-effect transistor driving circuit, which comprises a driving pre-circuit, a totem-pole circuit, and a driving post-circuit, wherein the driving pre-circuit comprises a capacitor C1, resistors R1, R2 and R3, a diode D1 and triodes T1 and T2; the totem-pole circuit consists of diodes D2 and D3, resistors R4 to R11, a capacitor C2 and field-effect transistors Q1 and Q2; the driving post-circuit consists of resistors R12 and R13, diodes D4 and D5, a capacitor C3 and a field-effect transistor Q3; the driving pre-circuit is connected with a driving signal Vg, the driving post-circuit is connected with a driving object Q3, and the totem-pole circuit is connected with the driving pre-circuit and the driving post-circuit. The driving circuit is simple in structure, low in cost, large in output current and high in load-carrying capacity, and can meet the requirement on the high-speed low-voltage large-current driving on the field-effect transistors under specific situations.
Description
Technical field
The invention belongs to power electronics and drive applied technical field, relate in particular to the power field effect tube drive circuit of the large electric current of a kind of high speed, this drive circuit output current is large, carrying load ability is strong, is applicable to the occasion to field effect transistor high velocity, low pressure large driven current density under particular case.
Background technology
Along with the development of power semiconductor device, there are various full-control type devices, the most frequently used high power transistor that has the large-power occasions of being applicable to (GTR), be applicable to middle low power occasion but the good power field effect transistor of rapidity (MOSFET) and in conjunction with GTR and power MOSFET and the power insulated gate control bipolar transistor (IGBT) producing.
In these switching devices, power MOSFET is because the advantages such as switching speed is fast, driving power is little, easy parallel connection become device the most frequently used in Switching Power Supply.Especially providing in the low-voltage, high-current Switching Power Supply of energy for communication electronic equipments such as computer, switch, the webservers, due to its specific (special) requirements, conventionally wish that device for power switching has the features such as On current is large, on state resistance is low, and that the shutoff voltage that can bear device requires is not high.Such device is appearance successively, as the 2SK2690 of company of Fuji, and the IRF7822 of IR company, IRFBL3703 etc.
The integrated drive electronics of existing these special driving power MOSFET and IGBT at present, can not meet the extremely strong application scenario of high frequency and carrying load ability, as as too slow in EXB841 speed, maximum switching frequency can only reach 40～50kHz, and IR2110 and only 2A of TPS2812 output maximum current.
Summary of the invention
The defect and the deficiency that exist for above-mentioned prior art, the object of the invention is to, the power field effect tube drive circuit of the large electric current of a kind of high speed is provided, circuit of the present invention makes trigger impulse have enough fast rising and decrease speed, and provide low resistance discharge loop for grid in the time turn-offing, produce grid negative pressure and prevent from misleading; In the time of power switch pipe switch, provide large electric current to discharge and recharge interelectrode capacitance, improve load-carrying energy, accelerated the switching speed of metal-oxide-semiconductor, improved the antijamming capability of drive circuit, effectively prevent delaying work of switching device simultaneously.
In order to realize above-mentioned task, the present invention adopts following technical solution:
The power field effect tube drive circuit of the large electric current of a kind of high speed, comprise and drive front end circuit, totem-pote circuit, driving back-end circuit, described driving front end circuit is connected with driving signal Vg, described driving back-end circuit is connected with driven object Q3, and described totem-pote circuit is connected on and drives front end circuit and drive between back-end circuit; Described driving front end circuit is by capacitor C 1, resistance R 1, R2, R3, and diode D1 and triode T1, T2 composition, described capacitor C 1 is connected on and drives between signal Vg and the base stage of triode T2; Described resistance R 1 is in parallel with capacitor C 1, and described resistance R 2 is connected between triode T2 base stage and emitter, and described resistance R 3 is connected between the emitter and base stage of triode T1; Described counnter attack diode D1 positive pole is connected with the collector electrode of triode T1, and D1 negative pole is connected with triode T2 collector electrode; Described triode T1 is NPN type triode, and the emitter of T1 is connected with the voltage of+12V, and described triode T2 is positive-negative-positive triode; Described totem-pote circuit is by diode D2, D3, resistance R 4 ~ R11, capacitor C 2 and field effect transistor Q1 and Q2 composition; The positive pole of described counnter attack diode D2 is connected with resistance R 4, and the negative pole of diode D2 is connected with the gate pole of field effect transistor Q1, and the positive pole of described counnter attack diode D3 is connected with the gate pole of field effect Q2, and the negative pole of diode D3 is connected with resistance R 8; Described resistance R 4 is connected on diode D2 positive pole and the anodal two ends of diode D1, described resistance R 5 is connected between the drain electrode and gate pole of field effect transistor Q1, described resistance R 6 is connected on field effect transistor Q1 gate pole and capacitor C 2 two ends, described resistance R 7 is connected between the source electrode and capacitor C 2 of field effect transistor Q1, described resistance R 8 is connected between the negative pole of diode D3 and the positive pole of diode D1, described resistance R 9 is connected on described resistance R 10 between capacitor C 2 and resistance R 11 and is connected between capacitor C 2 and field effect transistor Q2 drain electrode, and described resistance R 11 is connected on gate pole and the source electrode of field effect transistor Q2; Described field effect transistor Q1 is P channel-style MOSFET, and described field effect transistor Q2 is N channel-style MOSFET; Described driving back-end circuit is by resistance R 12 ~ R13, diode D4 and D5, capacitor C 3 and field effect transistor Q3 composition, described resistance R 12 is connected between field effect transistor Q3 and diode C2, described resistance R 13 is connected between resistance R 12 and ground, the positive pole of described breakdown diode D4 is connected with the positive pole of breakdown diode D5, the negative pole of diode D4 is connected with the gate pole of field effect transistor Q3, the minus earth of described breakdown diode D5; Described field effect transistor Q3 is N-type MOSFET, the source ground of field effect transistor Q3.
The invention has the beneficial effects as follows:
In the time driving signal Vg to be high level, positive-negative-positive triode T1 cut-off, NPN type triode T2 saturation conduction, P channel-style metal-oxide-semiconductor Q1 conducting, N channel-style metal-oxide-semiconductor Q2 closes, field effect transistor drive circuit output high level, driven object field effect transistor Q3 conducting; Otherwise, in the time driving signal Vg to be low level, positive-negative-positive triode T1 conducting, the saturated shutoff of NPN type triode T2, P channel-style metal-oxide-semiconductor Q1 turn-offs, N channel-style metal-oxide-semiconductor Q2 conducting, field effect transistor drive circuit output low level, driven object field effect transistor Q3 turn-offs.Enough large in order to guarantee the output current of drive circuit, carrying load ability is enough strong, the push-pull amplifier circuit that has adopted positive-negative-positive triode T1 and NPN type triode T2 to form in circuit.
In the time driving signal Vg by low uprising, the quick saturation conduction of triode T2, triode T1 moves back saturated shutoff simultaneously, and now the grid of metal-oxide-semiconductor Q1 and Q2 discharges by the loop being made up of resistance R 6, counnter attack diode D1 and triode T2 and the loop being made up of counnter attack diode D3, resistance R 5, diode D1 and triode T2 respectively.The capacitor C 1 of input coupling resistance R1 two ends parallel connection is the saturation conduction in order to accelerate triode T2.In the time driving signal Vg by high step-down, triode T2 exits saturated shutoff, triode T1 saturation conduction simultaneously, now, the grid of metal-oxide-semiconductor Q1 and Q2 charges by the loop being made up of triode T1, resistance R 4 and diode D2 and the loop being made up of triode T1, resistance R 7 respectively.Capacitor C 2 forms charge pump circuit with resistance R 12; in the time that circuit turn-offs, drive for metal-oxide-semiconductor Q3 provides negative pressure, shorten the turn-off time, prevent that field effect transistor from misleading; the voltage protection circuit being made up of breakdown diode D4 and D5 prevents surge voltage, protection field effect transistor Q3.
This driving circuit structure is simple, with low cost, is a kind of quick and extremely strong drive circuit of carrying load ability, in high frequency high-current equipment, can effectively drive field effect transistor device.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further explained.
Fig. 1 is circuit theory diagrams;
Fig. 2 is driving voltage waveform;
Fig. 3 is the voltage waveform between gate pole and grid.
In Fig. 1, Q1 ~ Q3 is field effect transistor, and wherein Q1 is P passage metal-oxide-semiconductor, and Q2 and Q3 are N passage metal-oxide-semiconductor; C1 ~ C3 is electric capacity, and D1 ~ D5 is diode, and wherein D1 ~ D3 is counnter attack diode, and D4 and D5 are breakdown diode; R1 ~ R14 is resistance, and T1, T2 are triode, and wherein T1 is NPN type triode, and T2 is positive-negative-positive triode.
In Fig. 2, Fig. 3, D is duty ratio, and T is switch periods, and DT is ON time, and (1-D) T is the turn-off time, and Vg is driving voltage waveform, the voltage between grid and source electrode that Vgs is power MOS pipe.
Embodiment
In Fig. 1, drive front end circuit to be connected with driving signal Vg, drive front end circuit to comprise capacitor C 1, resistance R 1, R2, R3, diode D1 and triode T1, T2, capacitor C 1 is connected on and drives between signal Vg and the base stage of triode T2; Resistance R 1 is in parallel with capacitor C 1, and resistance R 2 is connected between triode T2 base stage and emitter, and resistance R 3 is connected between the emitter and base stage of triode T1; Counnter attack diode D1 positive pole is connected with the collector electrode of triode T1, and D1 negative pole is connected with triode T2 collector electrode; Triode T1 is NPN type triode, and the emitter of T1 is connected with the voltage of+12V, and triode T2 is positive-negative-positive triode; Drive back-end circuit to be connected with driven object Q3, drive back-end circuit to comprise resistance R 12 ~ R13, diode D4 and D5, capacitor C 3 and field effect transistor Q3, resistance R 12 is connected between field effect transistor Q3 and diode C2, resistance R 13 is connected between resistance R 12 and ground, the positive pole of breakdown diode D4 is connected with the positive pole of breakdown diode D5, and the negative pole of diode D4 is connected with the gate pole of field effect transistor Q3, the minus earth of breakdown diode D5; Field effect transistor Q3 is N-type MOSFET, the source ground of field effect transistor Q3; Totem-pote circuit is connected to and drives front end circuit and drive between back-end circuit, and totem-pote circuit comprises diode D2, D3, resistance R 4 ~ R11, capacitor C 2 and field effect transistor Q1 and Q2; The positive pole of counnter attack diode D2 is connected with resistance R 2, and the negative pole of diode D2 is connected with the gate pole of field effect transistor Q1, and the positive pole of counnter attack diode D3 is connected with the gate pole of field effect Q2, and the negative pole of diode D3 is connected with resistance R 8; Resistance R 4 is connected on diode D2 positive pole and the anodal two ends of diode D1, resistance R 5 is connected between the drain electrode and gate pole of field effect transistor Q1, resistance R 6 is connected on field effect transistor Q1 gate pole and capacitor C 2 two ends, resistance R 7 is connected between the source electrode and capacitor C 2 of field effect transistor Q1, resistance R 8 is connected between the negative pole of diode D3 and the positive pole of diode D1, resistance R 9 is connected on described resistance R 10 between capacitor C 2 and resistance R 11 and is connected between capacitor C 2 and field effect transistor Q2 drain electrode, and resistance R 11 is connected on gate pole and the source electrode of field effect transistor Q2; Field effect transistor Q1 is P channel-style MOSFET, and field effect transistor Q2 is N channel-style MOSFET.
Fig. 2, Fig. 3 are two main waveforms in drive circuit, and establishing and driving the duty ratio of signal is D, and switch periods is T.In Fig. 2, in DT ON time, while driving signal to be continuously 5V, the voltage Vgs in Fig. 3 between metal-oxide-semiconductor grid and source electrode is higher than threshold voltage, and the metal-oxide-semiconductor of armature winding is open-minded.Within (1-D) T turn-off time, drive signal when 5V becomes 0V, the voltage Vgs between metal-oxide-semiconductor grid and source electrode becomes negative value, has realized the high frequency negative pressure of metal-oxide-semiconductor and has turn-offed, and has reduced the loss of drive circuit, has improved the anti-interference of circuit.
Be all power MOS pipe based on metal-oxide-semiconductor Q1 and Q2, have precipitous rising edge and trailing edge in order to make to export drive waveforms, the turn-off time of opening of metal-oxide-semiconductor Q1 and Q2 should be short as far as possible.For guaranteeing metal-oxide-semiconductor Q1 and Q2 opens, the turn-off time is short, must make them have quick charge loop, be that positive-negative-positive triode T2 is open-minded, NPN type triode T1 turn-offs, or repid discharge loop, and positive-negative-positive triode T2 is open-minded, NPN type triode T1 turn-offs, for obtaining charging and discharging circuit fast, must reduce the resistance of R4～R7 as far as possible, diode D1～D3 all should use fast diode simultaneously.For guaranteeing that field effect transistor Q1 and Q2 can not lead directly to, output when low level becomes high level, should make N channel-style metal-oxide-semiconductor Q2 discharge off before P type passage metal-oxide-semiconductor Q1, and after Q2 turn-offs, Q1 ability is open-minded; Corresponding therewith, when output is when high level becomes low level, should make metal-oxide-semiconductor Q2 before Q1, charge to threshold value, after Q1 turn-offs, Q2 ability is open-minded.Therefore in circuit, the value of resistance R 4, R5 should be less than R6, R7.
Obtaining after the trigger impulse of enough fast rising and decrease speed, also should guarantee to open time with low resistance to gate capacitance charges, when shutoff for grid provides low resistance discharge loop.Therefore in circuit shown in Fig. 1, resistance R 11, the R12 of resistance R 10, R12 and the composition discharge loop of composition charge circuit all should be less.
Claims (3)
1. the power field effect tube drive circuit of the large electric current of high speed, it is characterized in that, comprise and drive front end circuit, totem-pote circuit, driving back-end circuit, described driving front end circuit is connected with driving signal Vg, described driving back-end circuit is connected with driven object Q3, and described totem-pote circuit is connected to and drives front end circuit and drive between back-end circuit; Described driving front end circuit is by capacitor C 1, resistance R 1, R2, R3, and diode D1 and triode T1, T2 composition, described capacitor C 1 is connected on and drives between signal Vg and the base stage of triode T2; Described resistance R 1 is in parallel with capacitor C 1, and described resistance R 2 is connected between triode T2 base stage and emitter, and described resistance R 3 is connected between the emitter and base stage of triode T1; Described counnter attack diode D1 positive pole is connected with the collector electrode of triode T1, and D1 negative pole is connected with triode T2 collector electrode; Described triode T1 is NPN type triode, and the emitter of T1 is connected with the voltage of+12V, and described triode T2 is positive-negative-positive triode.
2. the power field effect tube drive circuit of the large electric current of a kind of high speed as claimed in claim 1, is characterized in that, described totem-pote circuit is by diode D2, D3, resistance R 4 ~ R11, capacitor C 2 and field effect transistor Q1 and Q2 composition; The positive pole of described counnter attack diode D2 is connected with resistance R 4, and the negative pole of diode D2 is connected with the gate pole of field effect transistor Q1, and the positive pole of described counnter attack diode D3 is connected with the gate pole of field effect Q2, and the negative pole of diode D3 is connected with resistance R 8; Described resistance R 4 is connected on diode D2 positive pole and the anodal two ends of diode D1, described resistance R 5 is connected between the drain electrode and gate pole of field effect transistor Q1, described resistance R 6 is connected on field effect transistor Q1 gate pole and capacitor C 2 two ends, described resistance R 7 is connected between the source electrode and capacitor C 2 of field effect transistor Q1, described resistance R 8 is connected between the negative pole of diode D3 and the positive pole of diode D1, described resistance R 9 is connected on described resistance R 10 between capacitor C 2 and resistance R 11 and is connected between capacitor C 2 and field effect transistor Q2 drain electrode, and described resistance R 11 is connected on gate pole and the source electrode of field effect transistor Q2; Described field effect transistor Q1 is P channel-style MOSFET, and described field effect transistor Q2 is N channel-style MOSFET.
3. the power field effect tube drive circuit of the large electric current of a kind of high speed as claimed in claim 1, it is characterized in that, described driving back-end circuit is by resistance R 12 ~ R13, diode D4 and D5, capacitor C 3 and field effect transistor Q3 composition, described resistance R 12 is connected between field effect transistor Q3 and diode C2, described resistance R 13 is connected between resistance R 12 and ground, the positive pole of described breakdown diode D4 is connected with the positive pole of breakdown diode D5, the negative pole of diode D4 is connected with the gate pole of field effect transistor Q3, the minus earth of described breakdown diode D5; Described field effect transistor Q3 is N-type MOSFET, the source ground of field effect transistor Q3.
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| CN106452374A (en) * | 2016-10-13 | 2017-02-22 | 薛强 | Method for implementing power amplifier power-on time sequence protection circuit |
| CN106575131A (en) * | 2015-02-25 | 2017-04-19 | 富士电机株式会社 | Reference voltage generating circuit and semiconductor device |
| WO2017088241A1 (en) * | 2015-11-26 | 2017-06-01 | 深圳市华星光电技术有限公司 | Buffer circuit |
| CN107294364A (en) * | 2016-03-30 | 2017-10-24 | 通用电气公司 | Switching system, switch module and fault protecting method |
| CN108696267A (en) * | 2017-04-12 | 2018-10-23 | 赤多尼科两合股份有限公司 | A kind of field-effect tube driving device, driving method and for electric installation |
| CN109149913A (en) * | 2017-06-15 | 2019-01-04 | 上海铼钠克数控科技股份有限公司 | Metal-oxide-semiconductor driving circuit |
| CN111404502A (en) * | 2020-03-24 | 2020-07-10 | 广州中逸光电子科技有限公司 | Totem-pole circuit |
| CN112072897A (en) * | 2020-09-07 | 2020-12-11 | 中国科学院电工研究所 | Grid driving circuit of power semiconductor chip and driving method thereof |
| CN112290777A (en) * | 2020-09-16 | 2021-01-29 | 深圳市安捷芯源半导体有限公司 | Current amplifying circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0746836A (en) * | 1993-07-29 | 1995-02-14 | Murata Mfg Co Ltd | Switching supply |
| CN2792013Y (en) * | 2004-12-03 | 2006-06-28 | 深圳市核达中远通电源技术有限公司 | Active clamping drive circuit and its back power transistor protective circuit |
| WO2011125945A1 (en) * | 2010-04-01 | 2011-10-13 | 日立オートモティブシステムズ株式会社 | Power converter device |
| CN102751977A (en) * | 2012-06-27 | 2012-10-24 | 惠州三华工业有限公司 | Bootstrap driving circuit |
| CN203135829U (en) * | 2013-03-13 | 2013-08-14 | 同济大学 | Transformer isolation-type gate drive circuit capable of performing negative-voltage switching off |
| CN103414354A (en) * | 2013-07-16 | 2013-11-27 | 燕山大学 | Power switch device pulse transformer isolation driving circuit |
-
2014
- 2014-03-18 CN CN201410099838.0A patent/CN103825436B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0746836A (en) * | 1993-07-29 | 1995-02-14 | Murata Mfg Co Ltd | Switching supply |
| CN2792013Y (en) * | 2004-12-03 | 2006-06-28 | 深圳市核达中远通电源技术有限公司 | Active clamping drive circuit and its back power transistor protective circuit |
| WO2011125945A1 (en) * | 2010-04-01 | 2011-10-13 | 日立オートモティブシステムズ株式会社 | Power converter device |
| CN102751977A (en) * | 2012-06-27 | 2012-10-24 | 惠州三华工业有限公司 | Bootstrap driving circuit |
| CN203135829U (en) * | 2013-03-13 | 2013-08-14 | 同济大学 | Transformer isolation-type gate drive circuit capable of performing negative-voltage switching off |
| CN103414354A (en) * | 2013-07-16 | 2013-11-27 | 燕山大学 | Power switch device pulse transformer isolation driving circuit |
Cited By (16)
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|---|---|---|---|---|
| CN106575131A (en) * | 2015-02-25 | 2017-04-19 | 富士电机株式会社 | Reference voltage generating circuit and semiconductor device |
| CN106575131B (en) * | 2015-02-25 | 2019-08-09 | 富士电机株式会社 | Reference voltage generating circuit and semiconductor device |
| WO2017088241A1 (en) * | 2015-11-26 | 2017-06-01 | 深圳市华星光电技术有限公司 | Buffer circuit |
| CN107294364A (en) * | 2016-03-30 | 2017-10-24 | 通用电气公司 | Switching system, switch module and fault protecting method |
| CN106452374B (en) * | 2016-10-13 | 2019-07-12 | 薛强 | A kind of power amplifier sequence of power switching protection circuit |
| CN106452374A (en) * | 2016-10-13 | 2017-02-22 | 薛强 | Method for implementing power amplifier power-on time sequence protection circuit |
| CN108696267B (en) * | 2017-04-12 | 2021-11-30 | 赤多尼科两合股份有限公司 | Driving device and driving method of field effect transistor and power supply device |
| CN108696267A (en) * | 2017-04-12 | 2018-10-23 | 赤多尼科两合股份有限公司 | A kind of field-effect tube driving device, driving method and for electric installation |
| CN109149913A (en) * | 2017-06-15 | 2019-01-04 | 上海铼钠克数控科技股份有限公司 | Metal-oxide-semiconductor driving circuit |
| CN111404502A (en) * | 2020-03-24 | 2020-07-10 | 广州中逸光电子科技有限公司 | Totem-pole circuit |
| CN112072897A (en) * | 2020-09-07 | 2020-12-11 | 中国科学院电工研究所 | Grid driving circuit of power semiconductor chip and driving method thereof |
| CN112290777A (en) * | 2020-09-16 | 2021-01-29 | 深圳市安捷芯源半导体有限公司 | Current amplifying circuit |
| CN114326785A (en) * | 2021-11-30 | 2022-04-12 | 国网河南省电力公司荥阳市供电公司 | Unmanned aerial vehicle transformer substation flight detection system |
| CN114326785B (en) * | 2021-11-30 | 2024-02-27 | 国网河南省电力公司荥阳市供电公司 | Unmanned aerial vehicle transformer substation flight detecting system |
| CN117175909A (en) * | 2023-11-02 | 2023-12-05 | 广东汇芯半导体有限公司 | Intelligent PFC module of single power switch IGBT |
| CN117175909B (en) * | 2023-11-02 | 2024-03-12 | 广东汇芯半导体有限公司 | Intelligent PFC module of single power switch IGBT |
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