CN202121561U - Novel MOS transistor drive circuit for switching power supply - Google Patents
Novel MOS transistor drive circuit for switching power supply Download PDFInfo
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- CN202121561U CN202121561U CN2010202751110U CN201020275111U CN202121561U CN 202121561 U CN202121561 U CN 202121561U CN 2010202751110 U CN2010202751110 U CN 2010202751110U CN 201020275111 U CN201020275111 U CN 201020275111U CN 202121561 U CN202121561 U CN 202121561U
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Abstract
The utility model relates to a novel MOS transistor drive circuit for a switching power supply. The novel MOS transistor drive circuit comprises an MOS switching transistor Q2 and a drive signal input end, and is characterized in that the connection part of the control input end of the MOS switching transistor Q2 and the drive signal input end is provided with a drive circuit (1), the drive circuit (1) is formed by connecting a quick shutoff closed path (11), a discharge closed path (12) and an anti-surge impact closed path (13), the quick shutoff closed path (11) and the anti-surge impact closed path (13) are in parallel connection and are in bridge connection between the control input end of the MOS switching transistor Q2 and the drive signal input end, and the discharge closed path (12) is in bridge connection between the grid electrode and the ground terminal of the MOS switching transistor Q2. The novel MOS transistor drive circuit can speed up the shutoff of an MOS transistor, can effectively control the rising speed of the drive circuit of the MOS transistor, improves the EMC characteristic of the whole switching power supply, and has the beneficial effects of simple circuit, stable and reliable performance, simple realization, and low cost.
Description
Technical field
The utility model relates to the switch power source driving circuit technical field, especially relates to a kind of Novel MOS tube drive circuit of Switching Power Supply.Belong to the electronic switch power technical field.
Background technology
At present, most switching power circuit all can be used the metal-oxide-semiconductor drive circuit, applies the drive signal of an EDM Generator of Adjustable Duty Ratio at the grid of metal-oxide-semiconductor, through control metal-oxide-semiconductor conducting and turn-off time, realizes the effective control to switch power source output voltage.The following method of the general employing of MOS drive circuit of the prior art: the control signal from control chip output is perhaps produced by oscillating circuit, be connected with the grid of metal-oxide-semiconductor through a driving resistor, realize switch control to metal-oxide-semiconductor.There is following problem in this kind method: 1, owing to the existence of metal-oxide-semiconductor grid source junction electric capacity, metal-oxide-semiconductor can not be turned off fast, and metal-oxide-semiconductor can temporarily get into linear zone; The conducting internal resistance of the metal-oxide-semiconductor of entering linear zone is very big; Can cause metal-oxide-semiconductor efficient low, switching loss increases, and heating is serious; 2, because control signal offers the drive current of metal-oxide-semiconductor rises very fast (rising edge), can cause the higher surge of opening, cause the metal-oxide-semiconductor damage that is hit, also can influence whole Switching Power Supply EMC characteristic to a certain extent.
To problem 1, there is the people on circuit, to do some improvement, i.e. the diode of a high frequency of inverse parallel on driving resistor, the bleed off gate charge quickens metal-oxide-semiconductor and turn-offs, but improves DeGrain fast; To problem 2, have the people directly to solve this problem, but because the price of chip is high, cost can increase a lot, has defect of high cost through the method that increases special driving chip.Chinese patent number discloses a kind of metal-oxide-semiconductor drive circuit for the utility model patent of " 200820094566.5 "; Include metal-oxide-semiconductor, drive this metal-oxide-semiconductor drive signal, connect delay unit, triode Q1, the triode Q2 of drive signal, and the triode Q3 that is connected with delay unit through resistance R 1;---.There is following shortcoming in this metal-oxide-semiconductor drive circuit: 1, metal-oxide-semiconductor still can not be turned off fast, and metal-oxide-semiconductor efficient is low, the problem that switching loss is big; 2, integrated circuit complex structure, cost are higher.
The utility model content
The purpose of the utility model is in order to overcome the problems referred to above that metal-oxide-semiconductor drive circuit of the prior art exists, a kind of Novel MOS tube drive circuit of Switching Power Supply to be provided, and it has simple and reliable, the easy realization of circuit, lower-cost characteristics.
The purpose of the utility model can reach through following measure:
A kind of Novel MOS tube drive circuit of Switching Power Supply comprises metal-oxide-semiconductor Q2 and driving signal input, and its design feature is: be provided with drive circuit in the control input end of metal-oxide-semiconductor Q2 and the junction of driving signal input; Said drive circuit is quick shutoff path, discharge path and prevent that the surge impact path is formed by connecting; Be connected across between the control input end and driving signal input of metal-oxide-semiconductor Q2 after turn-offing path fast and preventing the parallel connection of surge impact path, discharge path is connected across between the grid and earth terminal of metal-oxide-semiconductor.
The purpose of the utility model can also reach through following measure:
A kind of execution mode of the utility model is: drive circuit resistance R 1～R3, diode D1～D2, filter capacitor C1 and driving tube Q1 be formed by connecting, driving tube Q1 is made up of triode; The control utmost point by being connected driving tube Q1 after resistance R 2 and the filter capacitor C1 parallel connection constitutes quick shutoff path; The emitter that connects driving tube Q1 by resistance R 1, diode D1 series connection back constitutes and prevents the surge impact path, is connected across by discharge resistance R3 between grid and the earth terminal of metal-oxide-semiconductor to constitute discharge path.
Wherein: said driving signal input is connected with the grid of metal-oxide-semiconductor Q2 through resistance R 1, diode D1; Resistance R 2 is parallelly connected with filter capacitor C1, the formation filter circuit, and two ends of said filter circuit are connected with the base stage of driving signal input, triode respectively; The emitter of triode is connected with the grid of metal-oxide-semiconductor, its collector electrode is connected with ground; Said resistance R 3 is connected across between the grid and earth terminal of metal-oxide-semiconductor.
Further improved mode is: in the above-mentioned execution mode, drive circuit also is provided with pressure limiting diode D2, and the negative pole of said diode D2 is connected with the grid of metal-oxide-semiconductor, its positive pole is connected with ground.
Further improved mode is: in the above-mentioned execution mode; Triode in the drive circuit can be replaced by metal-oxide-semiconductor, and the grid of said metal-oxide-semiconductor is connected with the output that turn-offs path fast, source electrode is connected with earth terminal, drains and prevents that the output of surge impact path is connected.
A kind of execution mode of the utility model is: said driving tube Q1 can be made up of positive-negative-positive structure triode, and perhaps said metal-oxide-semiconductor is a N type structure metal-oxide-semiconductor.
A kind of execution mode of the utility model is: said metal-oxide-semiconductor Q2 can be N type metal-oxide-semiconductor, and its source electrode is connected with ground, and drain electrode is connected with input voltage vin.
The beneficial effect of the utility model is:
The utility model is owing to be provided with drive circuit in the control input end of metal-oxide-semiconductor Q2 and the junction of driving signal input; Therefore said drive circuit is quick shutoff path, discharge path and prevent that the surge impact path is formed by connecting and can solve above two aspect problems simultaneously: 1, can accelerate the shutoff of metal-oxide-semiconductor; Improve metal-oxide-semiconductor efficient, reduce switching loss; 2, effectively control the drive current rate of climb of metal-oxide-semiconductor, reduce the surge of opening in the opening process, reduce metal-oxide-semiconductor impact failure and the whole Switching Power Supply EMC characteristic of improvement.Have simple, stable and reliable for performance, the easy realization of circuit, beneficial effect with low cost.
Description of drawings
Fig. 1 is the circuit theory diagrams of a specific embodiment of the utility model.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further to describe in detail:
Specific embodiment 1:
With reference to Fig. 1, present embodiment comprises metal-oxide-semiconductor Q2 and driving signal input, is provided with drive circuit 1 in the control input end of metal-oxide-semiconductor Q2 and the junction of driving signal input; Said drive circuit 1 is quick shutoff path 11, discharge path 12 and prevent that surge impact path 13 is formed by connecting; Be connected across between the control input end and driving signal input of metal-oxide-semiconductor Q2 after turn-offing path 11 fast and preventing 13 parallel connections of surge impact path, discharge path 12 is connected across between the grid and earth terminal of metal-oxide-semiconductor.
In the present embodiment, drive circuit 1 resistance R 1～R3, diode D1～D2, filter capacitor C1 and driving tube Q1 be formed by connecting, driving tube Q1 is made up of triode; The control utmost point by being connected driving tube Q1 after resistance R 2 and the filter capacitor C1 parallel connection constitutes quick shutoff path 11; The emitter that connects driving tube Q1 by resistance R 1, diode D1 series connection back constitutes and prevents surge impact path 13, is connected across by discharge resistance R3 between grid and the earth terminal of metal-oxide-semiconductor to constitute discharge path 12.Said driving signal input is connected with the grid of metal-oxide-semiconductor Q2 through resistance R 1, diode D1; Resistance R 2 is parallelly connected with filter capacitor C1, the formation filter circuit, and two ends of said filter circuit are connected with the base stage of driving signal input, triode respectively; The emitter of triode is connected with the grid of metal-oxide-semiconductor, its collector electrode is connected with ground; The negative pole of said diode D2 is connected with the grid of metal-oxide-semiconductor, its positive pole is connected with ground; Said resistance R 3 is connected across between the grid and earth terminal of metal-oxide-semiconductor.
Said triode is a positive-negative-positive.Said metal-oxide-semiconductor Q2 is a N type metal-oxide-semiconductor, and its source electrode is connected with ground, and drain electrode is connected with input voltage vin.
The operation principle of present embodiment:
As shown in Figure 1, formed the circuit that acceleration metal-oxide-semiconductor Q2 ends by resistance R 2, capacitor C 1, triode, when the drive signal positive pulse will transfer negative pulse to (trailing edge); Because this moment, the E electrode potential of triode was higher than the B utmost point, the triode conducting is quickened the triode conducting through resistance R 2, capacitor C 1; Thereby make metal-oxide-semiconductor Q2 quicken to end; The time that makes Q2 pass through linear zone shortens, and plays to reduce switching loss, the purpose of raising the efficiency; Meanwhile, the discharge resistance R3 that is connected across two ends, metal-oxide-semiconductor Q2 grid source provides discharge loop also can for metal-oxide-semiconductor Q2 grid source junction electric capacity, also can play and quicken the effect that metal-oxide-semiconductor Q2 ends.
When positive pulse is come interim; Can effectively limit the positive pulse rise time by resistance R 1, diode D1 built-up circuit; Effectively protect the impact failure of metal-oxide-semiconductor Q2; Diode D2 can prevent the damage of negative pulse to metal-oxide-semiconductor simultaneously, in whole opening process, reduces to open surge to a certain extent, also can improve whole Switching Power Supply EMC characteristic.
Present embodiment is accelerated ending of metal-oxide-semiconductor when metal-oxide-semiconductor turn-offs through the circuit that resistance R 2, capacitor C 1, triode are formed on the one hand; The discharge resistance R3 that is connected across two ends, metal-oxide-semiconductor grid source simultaneously also plays a role; Improve metal-oxide-semiconductor efficient, reduced switching loss.Effectively controlled the drive current rate of climb of metal-oxide-semiconductor on the other hand by resistance R 1, diode D1 built-up circuit, effectively protect the impact failure of metal-oxide-semiconductor, diode D2 prevents the damage of negative pulse to metal-oxide-semiconductor; Reduce the surge of opening in the opening process simultaneously, improve whole Switching Power Supply EMC characteristic to a certain extent.
Specific embodiment 2:
The characteristics of the utility model specific embodiment 2 are: said driving tube Q1 is made up of metal-oxide-semiconductor, and the grid of said metal-oxide-semiconductor is connected with the output that turn-offs path 11 fast, source electrode is connected with earth terminal, drains and prevents that the output of surge impact path 13 is connected; Be resistance R 2 with filter capacitor C1 parallel connection after be connected metal-oxide-semiconductor grid constitute and turn-off path 11 fast; The grid that resistance R 1, diode D1 series connection back connect metal-oxide-semiconductor constitutes the quick path 11 that turn-offs; The drain electrode formation that resistance R 1, diode D1 series connection back connect metal-oxide-semiconductor prevents surge impact path 13; Be connected across by discharge resistance R3 between grid and the earth terminal of MOS switching tube Q2 and constitute discharge path 12, the source electrode of MOS switching tube Q2, the grounded collector of metal-oxide-semiconductor.
Specific embodiment 3:
The characteristics of the utility model specific embodiment 3 are: omit pressure limiting diode D2 shown in Figure 1, all the other are with specific embodiment 1 or specific embodiment 2.
Other embodiments of the utility model are:
Said driving tube Q1 not only comprises the metal-oxide-semiconductor of positive-negative-positive triode, same function, comprises that also other have the electronic device of same function and function.All the other are with specific embodiment 1, specific embodiment 2 or specific embodiment 3.
The above; Be merely the preferable specific embodiment of the utility model; But the protection range of the utility model is not limited thereto; Any technical staff who is familiar with the present technique field is equal to replacement or changes according to the technical scheme of the utility model and utility model design thereof in the scope that the utility model discloses, and all belongs to the protection range of the utility model.
Claims (8)
1. the Novel MOS tube drive circuit of a Switching Power Supply comprises MOS switching tube Q2 and driving signal input, it is characterized in that: be provided with drive circuit (1) in the control input end of MOS switching tube Q2 and the junction of driving signal input; Said drive circuit (1) is quick shutoff path (11), discharge path (12) and prevent that surge impact path (13) is formed by connecting; Be connected across between the control input end and driving signal input of MOS switching tube Q2 after turn-offing path (11) fast and preventing surge impact path (13) parallel connection, discharge path (12) is connected across between the grid and earth terminal of MOS switching tube Q2.
2. the Novel MOS tube drive circuit of a kind of Switching Power Supply according to claim 1, it is characterized in that: drive circuit (1) is formed by connecting resistance R 1～R3, diode D1～D2, filter capacitor C1 and driving tube Q1; The control utmost point that is connected driving tube Q1 after resistance R 2 and the filter capacitor C1 parallel connection constitutes and turn-offs path (11) fast; The emitter that resistance R 1, diode D1 series connection back connects driving tube Q1 constitutes and prevents surge impact path (13), is connected across by discharge resistance R3 between grid and the earth terminal of MOS switching tube Q2 to constitute discharge path (12).
3. the Novel MOS tube drive circuit of a kind of Switching Power Supply according to claim 2; It is characterized in that: said driving tube Q1 is made up of triode; The base stage that is connected triode after resistance R 2 and the filter capacitor C1 parallel connection constitutes turn-offs path (11) fast; The emitter formation that resistance R 1, diode D1 series connection back connect triode prevents surge impact path (13); Be connected across by discharge resistance R3 between grid and the earth terminal of MOS switching tube Q2 and constitute discharge path (12), the source electrode of MOS switching tube Q2, the grounded collector of triode.
4. the Novel MOS tube drive circuit of a kind of Switching Power Supply according to claim 2; It is characterized in that: said driving tube Q1 is made up of metal-oxide-semiconductor, and the grid of said metal-oxide-semiconductor is connected with the output that turn-offs path (11) fast, source electrode is connected with earth terminal, drains and prevents that the output of surge impact path (13) is connected; Be resistance R 2 with filter capacitor C1 parallel connection after be connected metal-oxide-semiconductor grid constitute and turn-off path (11) fast; The grid that resistance R 1, diode D1 series connection back connect metal-oxide-semiconductor constitutes the quick path (11) that turn-offs; The drain electrode formation that resistance R 1, diode D1 series connection back connect metal-oxide-semiconductor prevents surge impact path (13); Be connected across by discharge resistance R3 between grid and the earth terminal of MOS switching tube Q2 and constitute discharge path (12), the source electrode of MOS switching tube Q2, the grounded collector of metal-oxide-semiconductor.
5. according to the Novel MOS tube drive circuit of claim 3 or 4 described a kind of Switching Power Supplies, it is characterized in that: drive circuit (1) also is provided with pressure limiting diode D2, and the negative pole of said diode D2 is connected with the grid of MOS switching tube Q2, its positive pole is connected with ground.
6. the Novel MOS tube drive circuit of a kind of Switching Power Supply according to claim 3, it is characterized in that: said driving tube Q1 is made up of positive-negative-positive structure triode.
7. the Novel MOS tube drive circuit of a kind of Switching Power Supply according to claim 4, it is characterized in that: said metal-oxide-semiconductor is a N type structure metal-oxide-semiconductor.
8. the Novel MOS tube drive circuit of a kind of Switching Power Supply according to claim 1 and 2, it is characterized in that: said MOS switching tube Q2 is a N type metal-oxide-semiconductor, and its source electrode is connected with ground, drain electrode is connected with input voltage vin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202751110U CN202121561U (en) | 2010-07-28 | 2010-07-28 | Novel MOS transistor drive circuit for switching power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202751110U CN202121561U (en) | 2010-07-28 | 2010-07-28 | Novel MOS transistor drive circuit for switching power supply |
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| Publication Number | Publication Date |
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| CN202121561U true CN202121561U (en) | 2012-01-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010202751110U Expired - Fee Related CN202121561U (en) | 2010-07-28 | 2010-07-28 | Novel MOS transistor drive circuit for switching power supply |
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| CN (1) | CN202121561U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105099176A (en) * | 2015-08-28 | 2015-11-25 | 浙江嘉科新能源科技有限公司 | Circuit capable of implementing driving power by utilizing charge pump |
| CN106452374A (en) * | 2016-10-13 | 2017-02-22 | 薛强 | Method for implementing power amplifier power-on time sequence protection circuit |
| CN106788357A (en) * | 2017-01-23 | 2017-05-31 | 上海贝岭股份有限公司 | Drive circuit |
-
2010
- 2010-07-28 CN CN2010202751110U patent/CN202121561U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105099176A (en) * | 2015-08-28 | 2015-11-25 | 浙江嘉科新能源科技有限公司 | Circuit capable of implementing driving power by utilizing charge pump |
| CN106452374A (en) * | 2016-10-13 | 2017-02-22 | 薛强 | Method for implementing power amplifier power-on time sequence protection circuit |
| CN106452374B (en) * | 2016-10-13 | 2019-07-12 | 薛强 | A kind of power amplifier sequence of power switching protection circuit |
| CN106788357A (en) * | 2017-01-23 | 2017-05-31 | 上海贝岭股份有限公司 | Drive circuit |
| CN106788357B (en) * | 2017-01-23 | 2020-03-13 | 上海贝岭股份有限公司 | Driving circuit |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120118 Termination date: 20130728 |