CN201975986U - Full-bridge drive circuit of square wave inverter - Google Patents
Full-bridge drive circuit of square wave inverter Download PDFInfo
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- CN201975986U CN201975986U CN2011200130492U CN201120013049U CN201975986U CN 201975986 U CN201975986 U CN 201975986U CN 2011200130492 U CN2011200130492 U CN 2011200130492U CN 201120013049 U CN201120013049 U CN 201120013049U CN 201975986 U CN201975986 U CN 201975986U
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Abstract
The utility model relates to a full-bridge drive circuit of square wave inverter comprising a triode Q5, MOS transistors Q1 and Q4, a drive signal port PWM1 and peripheral resistors R to R6, diodes D1 to D3 and a capacitor EC1; one path of the drive signal port PWM1 is connected with a gate of the MOS transistor Q1 by passing through the resistor R1, the triode Q5 and the resistor R4 while the other path of the drive signal port PWM1 is connected with a gate of the MOS transistor Q4 by a parallel group of the resistor R6 and the diode D2; a source of the MOS transistor Q1 is connected with a drain of the MOS transistor Q4; a parallel group of the resistor R5 and the diode D3 is crossed between the gate and the source of the MOS transistor Q1; a source of the MOS transistor Q1 is connected with a collector of the triode Q5 by passing through the capacitor EC1 and the resistor R3; a connection position of the capacitor EC1 and the resistor R3 is connected with a power supply VCC by passing through a diode D1; the resistor R2 is crossed between a base and an emitter of the triode Q5. The utility model is simple and stable in circuit, easy to implement and low in cost.
Description
Technical field
The utility model relates to a kind of full bridge driving circuit of square-wave inverter, belongs to Switching Power Supply Driving technique field.
Background technology
Advantages such as at present, the power device metal-oxide-semiconductor is fast with its switching speed, driving power is little and low in energy consumption are widely used at switching power circuit.In actual applications, mainly use the NMOS pipe and the PMOS pipe of enhancement mode, these two kinds of metal-oxide-semiconductors have different on state characteristics, and the NMOS pipe is suitable for the occasion (being that low side drives) of source ground, and the PMOS pipe is suitable for the occasion (being high-side driver) that source electrode meets VCC.In the Switching Power Supply full-bridge topologies; must there be two metal-oxide-semiconductors to be in the state of high-side driver; can realize high-side driver easily if select the PMOS pipe for use; but because PMOS pipe conducting resistance is big; cost an arm and a leg; replace reasons such as kind is few, in high-side driver, also be to use the NMOS pipe usually.Therefore, in full-bridge topologies, the NMOS pipe that is in high-side driver just needs the special driving circuit to drive.In the prior art, two kinds of type of drive are arranged usually, one is to adopt the special boostrap circuit that boosts to realize; One is that the chip for driving that adopts charge pump integrated realizes.The cost of these two kinds of methods is than higher, and is not suitable for also being not suitable for promoting the use of in enormous quantities for the lower application scenario of cost requirement.
The utility model content
The purpose of this utility model is in order to address the above problem, a kind of full bridge driving circuit of square-wave inverter to be provided, and it has simple and reliable, the easy realization of circuit, cost is lower and have the characteristics of MOS defencive function.
The purpose of this utility model can reach by following measure:
A kind of full bridge driving circuit of square-wave inverter, its design feature is: comprise triode Q5, metal-oxide-semiconductor Q1 and Q4, drive signal port PWM1 and peripheral resistance R 1～R6, diode D1～D3 and electric capacity EC1; Drive signal port PWM1 one tunnel is connected the grid of metal-oxide-semiconductor Q1 successively with resistance R 4 by resistance R 1, triode Q5, another road of drive signal port PWM1 is connected the grid of metal-oxide-semiconductor Q4 by resistance R 6 and the also joint group of diode D2; The source electrode of metal-oxide-semiconductor Q1 is connected with the drain electrode of metal-oxide-semiconductor Q4; Cross-over connection has resistance R 5 with diode D3's and joint group between the grid of metal-oxide-semiconductor Q1 and source electrode, and the source electrode of metal-oxide-semiconductor Q1 connects the collector electrode of triode Q5 by electric capacity EC1, resistance R 3, and electric capacity EC1 is connected power supply VCC with the junction of resistance R 3 by diode D1; Resistance R 2 is connected across between the base stage and emitter of triode Q5; Form bootstrap circuit boost by resistance R 1～R4, diode D1, triode Q5 and electric capacity EC1.
The purpose of this utility model can also reach by following measure:
A kind of execution mode of the present utility model is: described triode Q5 can be made of NPN type triode.
A kind of execution mode of the present utility model is: described metal-oxide-semiconductor Q1 and Q4 can be made of N type metal-oxide-semiconductor.
A kind of execution mode of the present utility model is: described diode D1 can be the Ultrafast recovery rectifier diode; Described diode D2, D3 can be fast-recovery commutation diode.All can adopt the Ultrafast recovery rectifier diode or the fast-recovery commutation diode of routine techniques
The beneficial effects of the utility model are:
Compared with prior art, the utlity model has following advantage: the bootstrap circuit boost of being made up of resistance R 1～R4, diode D1, triode Q5, electric capacity EC1 can realize that the metal-oxide-semiconductor Q1 that full-bridge is in high end position carries out driving effectively reliably on the one hand; By the effect of diode D2～D3, resistance R 5～R6, can accelerate the shutoff of metal-oxide-semiconductor on the other hand, reduce switching loss, the protection metal-oxide-semiconductor is avoided same bridge arm direct pass.The utility model also has simple and reliable, the easy realization of circuit, cost is lower and have the advantage of MOS defencive function.
Description of drawings
Fig. 1 is the circuit theory diagrams of the utility model specific embodiment.
Embodiment
Below in conjunction with drawings and Examples the utility model is described in further detail:
Specific embodiment 1:
With reference to Fig. 1, present embodiment comprises triode Q5, metal-oxide-semiconductor Q1 and Q4, drive signal port PWM1 and peripheral resistance R 1～R6, diode D1～D3 and electric capacity EC1; Drive signal port PWM1 one tunnel is connected the grid of metal-oxide-semiconductor Q1 successively with resistance R 4 by resistance R 1, triode Q5, another road of drive signal port PWM1 is connected the grid of metal-oxide-semiconductor Q4 by resistance R 6 and two and the also joint group of managing D2; The source electrode of metal-oxide-semiconductor Q1 is connected with the drain electrode of metal-oxide-semiconductor Q4; Cross-over connection has resistance R 5 with diode D3's and joint group between the grid of metal-oxide-semiconductor Q1 and source electrode, and the source electrode of metal-oxide-semiconductor Q1 connects the collector electrode of triode Q5 by electric capacity EC1, resistance R 3, and electric capacity EC1 is connected power supply VCC with the junction of resistance R 3 by diode D1; Resistance R 2 is connected across between the base stage and emitter of triode Q5; Form bootstrap circuit boost by resistance R 1～R4, diode D1, triode Q5 and electric capacity EC1.
In the present embodiment, the model of described triode Q5 is a NPN type triode.Described metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q1Q4 are N type metal-oxide-semiconductor.Described diode D1 is the Ultrafast recovery rectifier diode; Described diode D2, D3 are fast-recovery commutation diode.
The operation principle of present embodiment:
With reference to Fig. 1, when circuit powers on, VCC gives electric capacity EC1 charging by diode D1, up to electric capacity EC1 both end voltage is VCC, and when drive signal PWM1 was low level, triode Q5 ended, triode Q5 collector electrode is drawn high, electric capacity EC1 discharges to metal-oxide-semiconductor Q1 by resistance R 3, R4, makes the voltage difference that produces VCC between the grid source of metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q1 conducting.This moment, metal-oxide-semiconductor Q4 was in cut-off state, guaranteed that the same brachium pontis of synchronization has only a pipe conducting; When drive signal PWM1 is high level, triode Q5 conducting, triode Q5 collector electrode is dragged down, and metal-oxide-semiconductor Q1 turn-offs, and the junction capacitance in the grid source of metal-oxide-semiconductor Q1 is discharged rapidly by resistance R 5, quickens the shutoff of metal-oxide-semiconductor Q1.Meanwhile, the high level of drive signal PWM1 adds to metal-oxide-semiconductor Q4 power supply by resistance R 6, makes metal-oxide-semiconductor Q4 conducting, and pipe Q1 is in cut-off state on this moment.Same diode D2 also can play the effect that metal-oxide-semiconductor Q4 turn-offs of quickening.Can protect two metal-oxide-semiconductors of same brachium pontis shoot through can not occur like this.
Full bridge driving circuit described in the utility model adopts limited several discrete components to constitute, and the bootstrap circuit boost that constitutes can be realized the effective driving to the high-end metal-oxide-semiconductor of full-bridge on the one hand; Can accelerate the shutoff of metal-oxide-semiconductor by increasing by two elements on the other hand, reduce switching loss, the protection metal-oxide-semiconductor is avoided same bridge arm direct pass.
The above; it only is the preferable specific embodiment of the utility model; but protection range of the present utility model is not limited thereto; anyly be familiar with those skilled in the art in the scope that the utility model discloses; be equal to replacement or change according to the technical solution of the utility model and utility model design thereof, all belonged to protection range of the present utility model.
Claims (4)
1. the full bridge driving circuit of a square-wave inverter is characterized in that: comprise triode Q5, metal-oxide-semiconductor Q1 and Q4, drive signal port PWM1 and peripheral resistance R 1～R6, diode D1～D3 and electric capacity EC1; Drive signal port PWM1 one tunnel is connected the grid of metal-oxide-semiconductor Q1 successively with resistance R 4 by resistance R 1, triode Q5, another road of drive signal port PWM1 is connected the grid of metal-oxide-semiconductor Q4 by resistance R 6 and the also joint group of diode D2; The source electrode of metal-oxide-semiconductor Q1 is connected with the drain electrode of metal-oxide-semiconductor Q4; Cross-over connection has resistance R 5 with diode D3's and joint group between the grid of metal-oxide-semiconductor Q1 and source electrode, and the source electrode of metal-oxide-semiconductor Q1 connects the collector electrode of triode Q5 by electric capacity EC1, resistance R 3, and electric capacity EC1 is connected power supply VCC with the junction of resistance R 3 by diode D1; Resistance R 2 is connected across between the base stage and emitter of triode Q5; Form bootstrap circuit boost by resistance R 1～R4, diode D1, triode Q5 and electric capacity EC1.
2. the full bridge driving circuit of a kind of square-wave inverter according to claim 1, it is characterized in that: described triode Q5 is made of NPN type triode.
3. the full bridge driving circuit of a kind of square-wave inverter according to claim 1, it is characterized in that: described metal-oxide-semiconductor Q1 and Q4 are made of N type metal-oxide-semiconductor.
4. the full bridge driving circuit of a kind of square-wave inverter according to claim 1, it is characterized in that: described diode D1 is made of the Ultrafast recovery rectifier diode; Described diode D2, D3 are that fast-recovery commutation diode constitutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200130492U CN201975986U (en) | 2011-01-17 | 2011-01-17 | Full-bridge drive circuit of square wave inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200130492U CN201975986U (en) | 2011-01-17 | 2011-01-17 | Full-bridge drive circuit of square wave inverter |
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| Publication Number | Publication Date |
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| CN201975986U true CN201975986U (en) | 2011-09-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011200130492U Expired - Fee Related CN201975986U (en) | 2011-01-17 | 2011-01-17 | Full-bridge drive circuit of square wave inverter |
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| CN (1) | CN201975986U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036406A (en) * | 2011-10-05 | 2013-04-10 | 三菱电机株式会社 | Semiconductor device |
| CN103580475A (en) * | 2012-07-19 | 2014-02-12 | 英飞凌科技奥地利有限公司 | Charge recovery in power converter driver stages |
| CN104009617A (en) * | 2014-05-17 | 2014-08-27 | 苏州蓝萃电子科技有限公司 | Simple low-voltage grid driving circuit |
| CN104506023A (en) * | 2014-12-26 | 2015-04-08 | 上海奇电电气科技有限公司 | Bootstrap driving circuit special for frequency converter |
| CN107611935A (en) * | 2017-09-28 | 2018-01-19 | 佛山市索尔电子实业有限公司 | A kind of inverter circuit with overcurrent protection function |
| CN108900076A (en) * | 2018-09-28 | 2018-11-27 | 广东百事泰电子商务股份有限公司 | Bridge driving circuit on inverter |
| CN110138370A (en) * | 2019-06-27 | 2019-08-16 | 深圳市辉曜科技有限公司 | Metal-oxide-semiconductor driving circuit |
| CN110492559A (en) * | 2019-08-01 | 2019-11-22 | 深圳市无限动力发展有限公司 | Sweeping robot and its sweeping robot cradle |
| WO2020062963A1 (en) * | 2018-09-28 | 2020-04-02 | 广东百事泰电子商务股份有限公司 | Bridge drive circuit on inverter |
-
2011
- 2011-01-17 CN CN2011200130492U patent/CN201975986U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036406A (en) * | 2011-10-05 | 2013-04-10 | 三菱电机株式会社 | Semiconductor device |
| CN103036406B (en) * | 2011-10-05 | 2015-10-07 | 三菱电机株式会社 | Semiconductor device |
| CN103580475A (en) * | 2012-07-19 | 2014-02-12 | 英飞凌科技奥地利有限公司 | Charge recovery in power converter driver stages |
| CN103580475B (en) * | 2012-07-19 | 2016-08-10 | 英飞凌科技奥地利有限公司 | Charge-restoring in power converter driving stage |
| CN104009617A (en) * | 2014-05-17 | 2014-08-27 | 苏州蓝萃电子科技有限公司 | Simple low-voltage grid driving circuit |
| CN104506023A (en) * | 2014-12-26 | 2015-04-08 | 上海奇电电气科技有限公司 | Bootstrap driving circuit special for frequency converter |
| CN107611935A (en) * | 2017-09-28 | 2018-01-19 | 佛山市索尔电子实业有限公司 | A kind of inverter circuit with overcurrent protection function |
| CN108900076A (en) * | 2018-09-28 | 2018-11-27 | 广东百事泰电子商务股份有限公司 | Bridge driving circuit on inverter |
| WO2020062963A1 (en) * | 2018-09-28 | 2020-04-02 | 广东百事泰电子商务股份有限公司 | Bridge drive circuit on inverter |
| CN110138370A (en) * | 2019-06-27 | 2019-08-16 | 深圳市辉曜科技有限公司 | Metal-oxide-semiconductor driving circuit |
| CN110492559A (en) * | 2019-08-01 | 2019-11-22 | 深圳市无限动力发展有限公司 | Sweeping robot and its sweeping robot cradle |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GUANGDONG REAL-DESIGN INTELLIGENT TECHNOLOGY CO., Free format text: FORMER NAME: FOSHAN SHUNDE REALDESIGN ELECTRONICS INDUSTRY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 528300 Shunde, Guangdong, Daliang Industrial Park, Fengxiang, Xiang Xiang Road, No. 1 Patentee after: GUANGDONG REAL-DESIGN INTELLIGENT TECHNOLOGY CO., LTD. Address before: 528300 Guangdong province Foshan city Shunde District Daliang Industrial Park Fengxiang Huaye Road No. 1 Patentee before: Foshan Shunde Realdesign Electronics Industry Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110914 Termination date: 20180117 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |