CN209134378U - Low-cost and high-performance switch tube driving circuit - Google Patents
Low-cost and high-performance switch tube driving circuit Download PDFInfo
- Publication number
- CN209134378U CN209134378U CN201821598688.8U CN201821598688U CN209134378U CN 209134378 U CN209134378 U CN 209134378U CN 201821598688 U CN201821598688 U CN 201821598688U CN 209134378 U CN209134378 U CN 209134378U
- Authority
- CN
- China
- Prior art keywords
- mos transistor
- connect
- pipe
- triode
- driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a kind of low-cost and high-performance switch tube driving circuits, it is recommended including common base and pipe and common gate pole is recommended to pipe, the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source, for exporting the first driving signal under the action of the signal source;Recommend the output end electric connection recommended to the common gate pole of pipe and the common base to pipe in the common gate pole, common gate pole, which is recommended, connect the output end of pipe with by the controlled end of driving transistor, for exporting the second driving signal under the action of first driving signal, to the driving for being carried out on or off by driving transistor.The low-cost and high-performance switch tube driving circuit of the utility model, voltage is big close to ground voltage, push-and-pull electric current when having the characteristics that when at low cost, high level output voltage close to supply voltage, low level output, and the crossover current of driving circuit is few, so that the power consumption of switch tube driving circuit is smaller, high reliablity.
Description
Technical field
The utility model relates to power technique fields more particularly to a kind of low-cost and high-performance switch tube driving circuits.
Background technique
The conversion of energy is realized in power electronic technique using the open and close of switching tube.The switch of switching tube both influenced
The fever of switching tube, and be the source of electromagnetic radiation, and everything driving for passing through switching tube is realized.Therefore the drive of switching tube
Dynamic is both the difficult point and emphasis of power electronic technique.
In the prior art, the pushing away of switch tube driving circuit, sourcing current are smaller, are not available and drive in high-power switch tube,
Voltage can not be close to driving power voltage, close to ground level when low level output when high level output.And switch tube driving circuit
Power consumption is larger.And the high performance device of high power switch tube drive circuit selects higher cost.
Utility model content
The utility model is intended to solve at least some of the technical problems in related technologies.For this purpose, this reality
It is to propose a kind of low-cost and high-performance switch tube driving circuit with a novel purpose.
To achieve the above object, according to the low-cost and high-performance switch tube driving circuit of the utility model embodiment, including
Common base is recommended to pipe, and the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source, is used for
The first driving signal is exported under the action of the signal source;
Common gate pole is recommended to pipe, and the output end recommended to the common gate pole of pipe and the common base to pipe is recommended in the common gate pole
It is electrically connected, common gate pole, which is recommended, connect the output end of pipe with by the controlled end of driving transistor, in first driving
The second driving signal is exported under the action of signal, to the driving for being carried out on or off by driving transistor.
Further, one embodiment according to the present utility model, the common base is recommended includes: to pipe
First triode Q2, the collector of the first triode Q2 are connect with the first supply voltage;
Second triode Q3, the emitter of the second triode Q3 are connect with the emitter of the first triode Q2,
The collector of the second triode Q3 is connect with reference, the base stage of the second triode Q3 and first triode
The base stage of Q2 connects, and the base stage of the first triode Q2 base stage and the second triode Q3 connect with the signal source output terminal respectively
It connects, the emitter of the first triode Q2 and the second triode Q3 are recommended with the common gate pole and connect to the gate pole of pipe.
Further, one embodiment according to the present utility model, the first triode Q2 are NPN type triode, institute
Stating the second triode Q3 is PNP type triode.
Further, one embodiment according to the present utility model, the common gate pole is recommended includes: to pipe
First MOS transistor Q4, the source electrode of the first MOS transistor Q4 are connect with first supply voltage;
The drain electrode and the drain electrode of the first MOS transistor Q4 of second MOS transistor Q5, the second MOS transistor Q5
Connection, the second MOS transistor Q5 road source electrode are connect with the reference, the gate pole of the second MOS transistor Q5 and institute
State the gate pole connection of the first MOS transistor Q4, the gate pole of the first MOS transistor Q4 and the gate pole of the second MOS transistor Q5
It is recommended respectively with the common base and first driving signal output end of pipe is connect, the leakage of the first MOS transistor Q4
The drain electrode of pole and the second MOS transistor Q5 is connect with the controlled end by driving transistor respectively.
Further, one embodiment according to the present utility model, the first MOS transistor Q4 are P channel crystal
Pipe, the second MOS transistor Q5 are N-channel transistor.
Further, one embodiment according to the present utility model, further includes:
First resistor R4, one end of the first resistor R4 are connect with the drain electrode of the first MOS transistor Q4, and described
The other end of one resistance R4 is connect with the controlled end by driving transistor;
Second resistance R5, one end of the second resistance R5 are connect with the drain electrode of the second MOS transistor Q5, and described
The other end of two resistance R5 is connect with the controlled end by driving transistor;
The first resistor R4 and second resistance R5 recommends the adjusting of the output Current Voltage to pipe for the common base.
Further, one embodiment according to the present utility model further includes 3rd resistor R6, the 3rd resistor R6's
One end is connect with the controlled end by driving transistor, and the other end of the 3rd resistor R6 is connect with reference;Described
Three resistance R6 are used to carry out initial reset to the controlled end by driving transistor.
Further, one embodiment according to the present utility model further includes third MOS transistor Q1, the 3rd MOS
The gate pole of transistor Q1 is connect with the signal output end of the signal source, the source electrode and reference ground of the third MOS transistor Q1
Connection, the drain electrode of the third MOS transistor Q1 is recommended with the common base connect the common base of pipe, and the 3rd MOS is brilliant
The drain electrode of body pipe Q1 also passes through the 4th resistance R3 and connect with first supply voltage;
The third MOS transistor Q1 is N-channel MOS transistor.
Further, one embodiment according to the present utility model, further includes:
5th resistance R7, one end of the 5th resistance R7 respectively with the drain electrode of the first MOS transistor Q4, second
The drain electrode of MOS transistor Q5 connects, and the other end of the 5th resistance R7 is connect with the controlled end by driving transistor;
6th resistance R8, one end of the 6th resistance R8 respectively with the drain electrode of the first MOS transistor Q4, second
The drain electrode of MOS transistor Q5 connects;
First diode D1, the cathode of the first diode D1 is connect with the other end of the 6th resistance R8, described
The anode of first diode D1 is connect with the controlled end by driving transistor.
Low-cost and high-performance switch tube driving circuit provided by the embodiment of the utility model is recommended pair by using common base
Pipe and common gate pole are recommended to pipe as driving output, and voltage is close to supply voltage, low level when having at low cost, high level output
The voltage feature big close to ground voltage, push-and-pull electric current when output, wherein common base recommends the friendship recommended to pipe and common gate pole to pipe
It is few to pitch electric current, so that the power consumption of switch tube driving circuit is smaller, high reliablity.And by adjusting first resistor R4 and second
The resistance value of resistance R5 can realize the driving to nearly all switching tube with lower cost.
Detailed description of the invention
Fig. 1 is low-cost and high-performance switch tube driving circuit structural schematic diagram provided by the utility model;
Fig. 2 is another low-cost and high-performance switch tube driving circuit structural schematic diagram provided by the utility model.
Appended drawing reference:
Signal source 10;
Cost high performance switch tube drive circuit 20;
By driving transistor 30.
The embodiments will be further described with reference to the accompanying drawings for the realization, functional characteristics and advantage of the utility model aim.
Specific embodiment
In order to make those skilled in the art better understand the scheme of the utility model, below in conjunction with the utility model reality
The attached drawing in example is applied, the technical scheme in the utility model embodiment is clearly and completely described.Unless otherwise defined,
All technical and scientific terms used herein are generally understood with person skilled in the technical field of the present invention
Meaning it is identical.Terminology used in the description of the utility model herein is intended merely to description specific embodiment
Purpose, it is not intended that in limitation the utility model.
Referenced herein " embodiment " is it is meant that a particular feature, structure, or characteristic described can wrap in conjunction with the embodiments
It is contained at least one embodiment of the utility model., which there is the phrase, in each position in the description to be each meant
Identical embodiment, nor the independent or alternative embodiment with other embodiments mutual exclusion.Those skilled in the art are explicit
Ground and implicitly understand, embodiment described herein can be combined with other embodiments.
Refering to fig. 1, the utility model provides a kind of low-cost and high-performance switch tube driving circuit, comprising: common base is recommended
Pipe and common gate pole to be recommended to pipe, the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source,
For exporting the first driving signal under the action of the signal source;The signal source is for exporting low and high level drive control letter
Number, the low and high level driving control signal, which is exported to the common base, recommends to pipe, and the common base is two triodes to pipe
Common base connection, constitute common base push-pull circuit pass through the complementation of two triodes under the driving of the low and high level of signal source
The low and high level signal that signal source exports is converted into the output of push-pull type low and high level signal by conducting.
The common gate pole is recommended to recommend the common gate pole of pipe and the common base and is electrically connected to the output end of pipe, common gate pole
It recommends and the output end of pipe is connect with by the controlled end of driving transistor, for being exported under the action of first driving signal
Second driving signal, to the driving for being carried out on or off by driving transistor.
Recommend first driving signal to pipe output push-pull type low and high level, the first driving letter in the common gate pole
It number acts on the common gate pole and recommends input terminal to pipe, the common gate pole, which is recommended, connects the common gate pole that pipe is two MOS transistors
It connects.Common gate pole push-pull circuit is constituted, under the low and high level driving of the first driving signal, is led by the complementation of two MOS transistors
It is logical, the low and high level signal of the first driving signal is converted into the output of push-pull type low and high level signal.To by driving transistor
Carry out the driving of on or off.
In the utility model embodiment, exported by the driving that common gate pole is recommended to pipe as driving circuit, it in this way can be with
Guarantee that upper MOS transistor is in depth saturation state when output is high level, at this time the source of upper MOS transistor, drain electrode pressure
Drop it is extremely low, close to 0V, that is to say, that when exporting high level close to the first supply voltage VCC.When driving exports low level, under
MOS transistor conducting, MOS transistor is in depth saturation state at present for this, and source, drain electrode pressure drop are extremely low, close to 0V, that is, exist
When low level, export close to 0V.
In addition, the utility model embodiment is added and the common gate pole input terminal of pipe by recommending in the common gate pole
It recommends and the common base of pipe reverse logic is recommended to pipe.Addition to pipe is recommended due to common base and greatly accelerates upper MOS crystalline substance
The opening of body pipe and lower MOS transistor, turn-off speed, while increasing common gate pole and recommending to the pushing away of pipe, sourcing current peak value, it is also bright
It is aobvious to reduce cross-conduction electric current.Since common base recommends the circuit topology to pipe, it itself is not likely to produce cross-conduction electric current.
And the input terminal addition common base of pipe is recommended to pipe by being recommended in common gate pole, so that circuit output is pushed away, is drawn
Peak point current is big, reduces the opening of driven switch, turn-off power loss, and common gate pole recommends and intersects straight-through electricity to existing in pipe
Stream is smaller, generates heat small, makes the high reliablity of circuit.
Refering to fig. 1, it includes: the first triode Q2 and the second triode Q3 that the common base, which is recommended to pipe, and the described 1st
The collector of pole pipe Q2 is connect with the first supply voltage VCC;The emitter and first triode of the second triode Q3
The emitter of Q2 connects, and the collector of the second triode Q3 is connect with reference to ground GND, the base stage of the second triode Q3
Connect with the base stage of the first triode Q2, the base stage of the first triode Q2 base stage and the second triode Q3 respectively with institute
The connection of signal source output terminal is stated, the emitter and the common gate pole of the first triode Q2 and the second triode Q3 are recommended to pipe
Gate pole connection.
The first triode Q2, the second triode Q3 are mutually complementary triode, the first triode Q2 and second
Triode Q3 complementary conducting under the driving signal of the signal source, due to the collector of the first triode Q2 and described the
One supply voltage VCC connection, when the first triode Q2 is connected, and the second triode Q3 ends, the first triode Q2
Emitter output level is the high level of the first supply voltage VCC.Due to the collector and ginseng of the second triode Q3
Ground GND connection is examined, when the first triode Q2 ends, and the second triode Q3 is connected, the second triode Q3 emitter
Low level is exported, the low and high level signal that signal source exports is converted into the output of push-pull type low and high level signal.
In one embodiment of the utility model, the first triode Q2 is NPN type triode, the two or three pole
Pipe Q3 is PNP type triode.
Refering to fig. 1, it includes: the first MOS transistor Q4 and the second MOS transistor Q5 that the common gate pole, which is recommended to pipe, described
The source electrode of first MOS transistor Q4 is connect with the first supply voltage VCC;The drain electrode of the second MOS transistor Q5 and institute
The drain electrode connection of the first MOS transistor Q4 is stated, the second MOS transistor Q5 road source electrode is connect with described with reference to ground GND, described
The gate pole of second MOS transistor Q5 is connect with the gate pole of the first MOS transistor Q4, the door of the first MOS transistor Q4
The gate pole of pole and the second MOS transistor Q5 recommend first driving signal output end company to pipe with the common base respectively
Connect, the drain electrode of the first MOS transistor Q4 and the second MOS transistor Q5 drain respectively with it is described by driving transistor by
Control end connection.
The first MOS transistor Q4, the second MOS transistor Q5 are mutual complementary transistor, first MOS transistor
Q4 and the second MOS transistor Q5 complementary conducting under first driving signal, due to the first MOS transistor Q4's
Source electrode is connect with the first supply voltage VCC, and when the first MOS transistor Q4 is connected, the second MOS transistor Q5 ends
When, high level that the first MOS transistor Q4 drain electrode output level is the first supply voltage VCC.Due to described second
The source electrode of MOS transistor Q5 is connect with reference to ground GND, as the first MOS transistor Q4 cut-off, the second MOS transistor Q5
When conducting, the first MOS transistor Q4 drain electrode output low level.
In one embodiment of the utility model, the first MOS transistor Q4 be p channel transistor, described second
MOS transistor Q5 is N-channel transistor.
Refering to fig. 1, further includes: first resistor R4 and second resistance R5, one end of the first resistor R4 and described first
The drain electrode of MOS transistor Q4 connects, and the other end of the first resistor R4 is connect with the controlled end by driving transistor;Institute
The one end for stating second resistance R5 is connect with the drain electrode of the second MOS transistor Q5, the other end of the second resistance R5 and institute
It states by the controlled end connection of driving transistor;The first resistor R4 and second resistance R5 is recommended for the common base to pipe
Current Voltage is exported to adjust.By first resistor R4 be connected on the first MOS transistor Q4 and it is described by driving transistor it
Between, when the first MOS transistor Q4 conducting, by first resistor R4 limitation to by the charging electricity of driving transistor
Stream and conducting voltage are applicable to drive the different conductings by driving transistor.It is limited by the second resistance R5
System is to by the discharge current of driving transistor, being applicable to the different deadlines by driving transistor.
It refering to fig. 1, further include 3rd resistor R6, one end of the 3rd resistor R6 is with described by the controlled of driving transistor
End connection, the other end of the 3rd resistor R6 are connect with reference to ground GND;The 3rd resistor R6 is used for brilliant by driving to described
The controlled end of body pipe carries out initial reset.The 3rd resistor R6 is pull down resistor, passes through the 3rd resistor R6 and reference
Ground GND connection, when the common gate pole, which is recommended, does not have drive output signal to pipe, the 3rd resistor R6 will be described brilliant by driving
The electricity of the controlled end of body pipe discharges, make it is described by driving transistor controlled end low level, it is described to be in by driving transistor
The original state of cut-off.
It refering to fig. 1, further include third MOS transistor Q1, gate pole and the signal source of the third MOS transistor Q1
Signal output end connection, the source electrode of the third MOS transistor Q1 are connect with reference to ground GND, the third MOS transistor Q1
Drain electrode recommended with the common base common base of pipe connect, the drain electrode of the third MOS transistor Q1 also passes through the 4th electricity
Resistance R3 is connect with the first supply voltage VCC.
The third MOS transistor Q1 is N-channel MOS transistor.When the signal source exports high level, the third
It is connected between the source electrode and drain electrode of MOS transistor Q1, mutual conduction between the drain electrode and source electrode of the third MOS transistor Q1,
The third MOS transistor Q1 exports low level, and when the signal source exports low level, the third MOS transistor Q1 is defeated
High level out carries out the output signal of the signal source reversed by the third MOS transistor Q1.So that the common gate
Pole, which is recommended, exports driving signal identical with the signal source phase to pipe.
Referring to Fig.2, further include: the 5th resistance R7, the 6th resistance R8 and first diode D1, the one of the 5th resistance R7
End is connect with the drain electrode of the drain electrode of the first MOS transistor Q4, the second MOS transistor Q5 respectively, the 5th resistance R7's
The other end is connect with the controlled end by driving transistor;One end of the 6th resistance R8 is brilliant with the first MOS respectively
The drain electrode of body pipe Q4, the drain electrode of the second MOS transistor Q5 connection;The cathode of the first diode D1 and the 6th resistance R8
Other end connection, the anode of the first diode D1 connect with the controlled end by driving transistor.Pass through described
Five resistance R7, the 6th resistance R8 and first diode D1 carry out charge-discharge circuit limitation by driving transistor to described, to adapt to
In different described by the charging and discharging currents of driving transistor and from discharge time.
Low-cost and high-performance switch tube driving circuit provided by the embodiment of the utility model is recommended pair by using common base
Pipe and common gate pole are recommended to pipe as driving output, and voltage is close to supply voltage, low level when having at low cost, high level output
The voltage feature big close to ground voltage, push-and-pull electric current when output, wherein common base recommends the friendship recommended to pipe and common gate pole to pipe
It is few to pitch electric current, so that the power consumption of switch tube driving circuit is smaller.And by adjusting first resistor R4's and second resistance R5
Resistance value, cost that can be extremely low realize the driving to nearly all switching tube.
The above is only the embodiments of the present invention, are not intended to limit the scope of the patents of the utility model, although referring to before
Embodiment is stated the utility model is described in detail, it, still can be right for coming for those skilled in the art
Technical solution documented by aforementioned each specific embodiment is modified, or carries out equivalent replace to part of technical characteristic
It changes.All equivalent structures done using the utility model specification and accompanying drawing content are directly or indirectly used in other correlations
Technical field, similarly within the utility model patent protection scope.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is contained at least one embodiment or example of the utility model.In the present specification, to the schematic table of above-mentioned term
Stating may not refer to the same embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be
It can be combined in any suitable manner in any one or more embodiment or examples.
Although the embodiments of the present invention have been shown and described above, it is to be understood that above-described embodiment is
Illustratively, it should not be understood as limiting the present invention, those skilled in the art are not departing from the utility model
Principle and objective in the case where above-described embodiment can be changed in the scope of the utility model, modify, replace and
Modification.
Claims (9)
1. a kind of low-cost and high-performance switch tube driving circuit characterized by comprising
Common base is recommended to pipe, and the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source, is used
In exporting the first driving signal under the action of the signal source;
Common gate pole is recommended to pipe, and the output end electrical property recommended to the common gate pole of pipe and the common base to pipe is recommended in the common gate pole
Connection, common gate pole, which is recommended, connect the output end of pipe with by the controlled end of driving transistor, in first driving signal
Under the action of export the second driving signal, to it is described by driving transistor carry out on or off driving.
2. low-cost and high-performance switch tube driving circuit according to claim 1, which is characterized in that the common base is recommended
Include: to pipe
First triode Q2, the collector of the first triode Q2 are connect with the first supply voltage;
Second triode Q3, the emitter of the second triode Q3 is connect with the emitter of the first triode Q2, described
The collector of second triode Q3 is connect with reference, the base of the base stage of the second triode Q3 and the first triode Q2
The base stage of pole connection, the first triode Q2 base stage and the second triode Q3 are connect with the signal source output terminal respectively, institute
Stating the emitter of the first triode Q2 and the second triode Q3, gate pole recommends gate pole connection to pipe together.
3. low-cost and high-performance switch tube driving circuit according to claim 2, which is characterized in that first triode
Q2 is NPN type triode, and the second triode Q3 is PNP type triode.
4. low-cost and high-performance switch tube driving circuit according to claim 3, which is characterized in that recommend the common gate pole
Include: to pipe
First MOS transistor Q4, the source electrode of the first MOS transistor Q4 are connect with first supply voltage;
The drain electrode of second MOS transistor Q5, the second MOS transistor Q5 is connect with the drain electrode of the first MOS transistor Q4,
The second MOS transistor Q5 road source electrode is connect with the reference, the gate pole and described first of the second MOS transistor Q5
The gate pole of MOS transistor Q4 connects, the gate pole of the gate pole of the first MOS transistor Q4 and the second MOS transistor Q5 respectively with
The common base is recommended to the connection of first driving signal output end of pipe, the drain electrode of the first MOS transistor Q4 and the
The drain electrode of two MOS transistor Q5 is connect with the controlled end by driving transistor respectively.
5. low-cost and high-performance switch tube driving circuit according to claim 4, which is characterized in that the first MOS is brilliant
Body pipe Q4 is p channel transistor, and the second MOS transistor Q5 is N-channel transistor.
6. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include:
First resistor R4, one end of the first resistor R4 are connect with the drain electrode of the first MOS transistor Q4, first electricity
The other end of resistance R4 is connect with the controlled end by driving transistor;
Second resistance R5, one end of the second resistance R5 are connect with the drain electrode of the second MOS transistor Q5, second electricity
The other end of resistance R5 is connect with the controlled end by driving transistor;
The first resistor R4 and second resistance R5 recommends the adjusting of the output Current Voltage to pipe for the common gate pole.
7. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include 3rd resistor
R6, one end of the 3rd resistor R6 are connect with the controlled end by driving transistor, the other end of the 3rd resistor R6
With reference it connect;The 3rd resistor R6 is used to carry out initial reset to the controlled end by driving transistor.
8. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include the 3rd MOS
Transistor Q1, the gate pole of the third MOS transistor Q1 are connect with the signal output end of the signal source, and the 3rd MOS is brilliant
The source electrode of body pipe Q1 is connect with reference, and drain electrode and the common base of the third MOS transistor Q1 recommends the cobasis to pipe
Pole connection, the drain electrode of the third MOS transistor Q1 also pass through the 4th resistance R3 and connect with first supply voltage;
The third MOS transistor Q1 is N-channel MOS transistor.
9. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include:
5th resistance R7, one end of the 5th resistance R7 are brilliant with the drain electrode of the first MOS transistor Q4, the 2nd MOS respectively
The drain electrode of body pipe Q5 connects, and the other end of the 5th resistance R7 is connect with the controlled end by driving transistor;
6th resistance R8, one end of the 6th resistance R8 are brilliant with the drain electrode of the first MOS transistor Q4, the 2nd MOS respectively
The drain electrode of body pipe Q5 connects;
First diode D1, the cathode of the first diode D1 are connect with the other end of the 6th resistance R8, and described first
The anode of diode D1 is connect with the controlled end by driving transistor.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821598688.8U CN209134378U (en) | 2018-09-28 | 2018-09-28 | Low-cost and high-performance switch tube driving circuit |
PCT/CN2019/092343 WO2020062962A1 (en) | 2018-09-28 | 2019-06-21 | Low-cost and high-performance switch tube driving circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821598688.8U CN209134378U (en) | 2018-09-28 | 2018-09-28 | Low-cost and high-performance switch tube driving circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN209134378U true CN209134378U (en) | 2019-07-19 |
Family
ID=67230742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201821598688.8U Active CN209134378U (en) | 2018-09-28 | 2018-09-28 | Low-cost and high-performance switch tube driving circuit |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN209134378U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109167592A (en) * | 2018-09-28 | 2019-01-08 | 广东百事泰电子商务股份有限公司 | Low-cost and high-performance switch tube driving circuit |
CN112305281A (en) * | 2020-10-23 | 2021-02-02 | 北京盈拓润达电气科技有限公司 | Fault indicator test system and high-voltage power amplifying circuit thereof |
-
2018
- 2018-09-28 CN CN201821598688.8U patent/CN209134378U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109167592A (en) * | 2018-09-28 | 2019-01-08 | 广东百事泰电子商务股份有限公司 | Low-cost and high-performance switch tube driving circuit |
CN112305281A (en) * | 2020-10-23 | 2021-02-02 | 北京盈拓润达电气科技有限公司 | Fault indicator test system and high-voltage power amplifying circuit thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105429441B (en) | IGBT closed loop initiative driving circuit and its driving method | |
CN106059552B (en) | Driving circuit based on switch mosfet dynamic characteristic | |
CN104269997B (en) | A kind of adjustable transformer isolation complementary drive circuit in dead band | |
CN209134378U (en) | Low-cost and high-performance switch tube driving circuit | |
CN106464122A (en) | Gate driver controlling a collector to emitter voltage variation of an electronic switch and circuits including the gate driver | |
CN103683872A (en) | Half-bridge driving circuit | |
CN106814841A (en) | A kind of power control circuit for saving electric energy | |
CN207117164U (en) | The power protecting circuit and display device of a kind of display device | |
CN108900076A (en) | Bridge driving circuit on inverter | |
CN109167592A (en) | Low-cost and high-performance switch tube driving circuit | |
CN201398183Y (en) | Power switch driving circuit | |
CN105992418B (en) | Electromagnetic oven, the heating control apparatus of electromagnetic heating system and its control method | |
CN206271398U (en) | Drive circuit, control circuit, liquid crystal display and terminal device for liquid crystal display | |
CN208797823U (en) | Bridge driving circuit on inverter | |
CN207638923U (en) | IGBT drive circuit and electromagnetic heating equipment | |
CN105704874B (en) | A kind of PBA driving circuit based on PWM light modulation | |
CN204215966U (en) | Relay drive circuit and relay | |
CN202121561U (en) | Novel MOS transistor drive circuit for switching power supply | |
CN101667740B (en) | Output driving circuit in lithium battery charge and discharge protective chip | |
CN109149913A (en) | Metal-oxide-semiconductor driving circuit | |
CN203840595U (en) | High-linearity large-dynamic light modulating circuit used for LED backlight source | |
CN208738139U (en) | A kind of control relay circuit and relay control device | |
CN106849926A (en) | A kind of pressure nmos switch control circuit wide | |
CN209201040U (en) | A kind of switch driving circuit, controller and electronic equipment | |
CN208707613U (en) | One-key switch electromechanics road and electric terminal equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518000 Three Floors of Baotian Road 358 Factory Area, Tiegang Community, Xixiang Street, Baoan District, Shenzhen City, Guangdong Province Patentee after: Guangdong best medical equipment Co., Ltd Address before: 518000 Three Floors of Baotian Road 358 Factory Area, Tiegang Community, Xixiang Street, Baoan District, Shenzhen City, Guangdong Province Patentee before: Guangdong BESTEK E-commerce Co.,Ltd. |