CN106849926A - A kind of pressure nmos switch control circuit wide - Google Patents
A kind of pressure nmos switch control circuit wide Download PDFInfo
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- CN106849926A CN106849926A CN201710011386.XA CN201710011386A CN106849926A CN 106849926 A CN106849926 A CN 106849926A CN 201710011386 A CN201710011386 A CN 201710011386A CN 106849926 A CN106849926 A CN 106849926A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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Abstract
A kind of pressure nmos switch control circuit wide of the invention, the circuit includes on-off control circuit, for the IO control signals of processor to be converted into actual high drive switch controlling signal, to realize driving the on-off control circuit, and to the break-make control of whole circuit from control circuit；For preventing rear end power tube gate-source voltage superpressure, cause bootstrap voltage mode overpressure protection circuit that power tube superpressure is burnt and for preventing rear end power tube gate-source voltage inadequate, rear end power tube is caused to enter amplification region, can not effectively open, cause power tube excessively stream, the bootstrap voltage mode under-voltage protecting circuit that overheat is burnt, due to using above-mentioned technical proposal, the present invention has power input wide ranges, reliability is high, small volume, the features such as structure is easily achieved, can be widely applied to need the application scenario of switch control, take into full account isolation of system, switching speed, overcurrent protection, improve system availability.
Description
Technical field
The present invention relates to a kind of wide pressure nmos switch control circuit, with power input wide ranges, reliability be high, volume
The features such as small, structure is easily achieved, can be widely applied to need the application scenario of switch control.
Background technology
With the development of microelectric technique, N-channel MOS FET is compared to triode and P-channel MOSFET in high-frequency, big
Power and efficient switch application occasion show more and more obvious advantage.According to its device property, in N-channel MOS FET
Grid applies the high-voltage signal relative to source electrode, and N-channel MOS FET drain can be controlled effectively to be opened with source electrode, sets N-channel
MOSFET grid voltages follow source voltage, then the N-channel MOS FET drain can be controlled effectively to be turned off with source electrode.
It is of the invention on condition that had the high side power system relative to supply voltage, for example with shown in Fig. 1
Insulating power supply produces VBOOST voltages.
Before MOSFET element appearance, the form of relay switch being taken ON-OFF control circuit more.Relay can be abundant
Ensure isolation, and driving force is larger, but its poor reliability, contact easily produces arcing electric discharge, anti-vibration and resists when using
Impact capacity there is also larger limitation.The electronic devices such as MOSFET occur after, partial switch control circuit be also adopted by triode,
Metal-oxide-semiconductor etc. carries out switch control, but it is many do not consider the safeguard measure such as bootstrap voltage mode superpressure, under-voltage, and circuit pressure voltage is low, drive
Ability is weak.
The content of the invention
In order to solve the above problems, it is an object of the invention to provide a kind of wide power accommodation, structure is easily achieved, and drives
Kinetic force is strong, reliability ON-OFF control circuit high, to meet high-power, high efficiency nmos switch application scenario pressure NMOS wide
ON-OFF control circuit.
The present invention includes following technical scheme：A kind of pressure nmos switch control circuit wide, the circuit performs electricity including break-make
Road, the on-off control circuit includes PMOS V1, power tube V2, voltage-stabiliser tube V4, voltage-stabiliser tube V6, thermistor F2 and capacitance-resistance
Network；Characterized in that, the circuit is also included for the IO control signals of processor to be converted into actual high drive switch
Control signal, to realize driving the on-off control circuit, and to the break-make control of whole circuit from control circuit；For
Rear end power tube gate-source voltage superpressure is prevented, causes bootstrap voltage mode overpressure protection circuit and be used for that power tube superpressure is burnt
Prevent rear end power tube gate-source voltage inadequate, cause rear end power tube to enter amplification region, it is impossible to effectively to open, cause power tube
The bootstrap voltage mode under-voltage protecting circuit that excessively stream, overheat are burnt；
Wherein, the isolation control circuit is connected with break-make execution circuit control, the bootstrap voltage mode overpressure protection circuit
And bootstrap voltage mode under-voltage protecting circuit is arranged between the isolation control circuit and the break-make execution circuit.
Further, the isolation control circuit includes optocoupler B1, PNP triode V8 and the first resistance-capacitance network, described first
Resistance-capacitance network includes resistance R12 and resistance R15, and one end of the resistance R12 is connected with controller, and the resistance R12's is another
End is connected with first stitch of the optocoupler B1, the second stitch ground connection of the optocoupler B1, the 3rd stitch point of the optocoupler B1
Source electrode not with the PNP triode V8 is connected, and described resistance R15 one end is connected with the base stage of the PNP triode V8, another
End ground connection.
Further, the resistance R15 is base stage current-limiting resistance.
Further, the bootstrap voltage mode overpressure protection circuit include NPN triode V7, it is two-sided can breakdown diode V9 and the
Two resistance-capacitance networks, second resistance-capacitance network includes resistance R16 and resistance R17；The source electrode of the NPN triode V7 and the electricity
Hinder one end connection of R16, the base stage of the NPN triode V7 with it is described it is two-sided can the 3rd stitch of breakdown diode V9 be connected,
It is described can the other end with the resistance R16 of the first stitch and the second stitch of breakdown diode V9 be connected, the resistance R17
One end be connected to the resistance R16 and it is described can breakdown diode V9 the first stitch and the second stitch between, the resistance
The other end ground connection of R17.
Further, the bootstrap voltage mode under-voltage protecting circuit includes comparator U1, NPN triode V3 and the 3rd capacitance-resistance net
Network, the 3rd resistance-capacitance network includes resistance R2, resistance R6, resistance R3 and resistance R7；Described resistance R2 one end and VIN inputs
Connection, the other end is connected with the 5th stitch positive input terminal of comparator U1, and one end of the resistance R6 is grounded, the other end with it is described
The 5th stitch positive input terminal connection of comparator U1, described resistance R3 one end is connected with V_BOOST, the other end and the comparator
The 6th pin negative input end connection of U1, described resistance R7 one end ground connection, the 6th pin negative input end of the other end and the comparator U1
Connection, the 7th stitch output end of the comparator U1 is connected with the base stage of the NPN triode V3, the NPN triode V3's
Grounded emitter, the colelctor electrode of the NPN triode V3 is connected by resistance R1 with the base stage of the PNP triode V7.
Further, the resistance-capacitance network includes resistance R9, resistance R10, resistance R11 and resistance R13；The PMOS V1
Grid be connected with VIN by resistance R13, the drain electrode of the PMOS V1 is connected by resistance R9 with the grid of power tube V2,
The resistance R11 and voltage-stabiliser tube V6 are parallel between the grid of power tube V2 and drain electrode, and the resistance R10 is in parallel with voltage-stabiliser tube V4
Between the grid and source electrode of PMOS V1, source electrode and the input V of the power tube V2INConnection, the drain electrode of the power tube V2
By thermistor F2 and output VOUTConnection.
Further, the resistance R9 and resistance R11 is divider resistance, the resistance R10 and resistance R13 bootstrap voltage mode partial pressures
Resistance.
Further, the thermistor F2 is self- recoverage insurance, can play a part of system overcurrent protection.
The present invention has the following advantages compared to existing technology：
（1）The present invention controls to require that propose a kind of novel switching circuit method for designing, circuit is simple and reliable for nmos switch,
Compared to the large volume switchgear such as relay, contactor, the miniaturization of whole circuit is advantageously implemented；
（2）Rationally designed by circuit, whole system is pressure-resistant to be solely dependent upon PMOS, by PMOS reasonable selection, can be significantly
The pressure voltage of circuit is improved, the scope of application of the ON-OFF control circuit is improved；
（3）The present invention takes into full account bootstrap voltage mode superpressure and undervoltage condition, fully ensures rear end power tube normal work, reliability
It is high；
（4）This circuit can single bootstrap voltage mode, single bootstrap voltage mode overpressure protection circuit, single under-voltage protecting circuit feelings
Under condition, the application scenario of variable connector distribution is realized by configuring multiple isolation control circuits and break-make execution circuit, simplified
Circuit structure, extends system application；
（5）The present invention takes into full account isolation of system, switching speed, overcurrent protection, improves system availability.
Brief description of the drawings
Fig. 1 is ON-OFF control circuit application schematic diagram.
Fig. 2 is a kind of pressure nmos switch control circuit structural representation wide of the present invention.
In figure：Ⅰ：Isolation control circuit, II：Bootstrap voltage mode overpressure protection circuit, III：Bootstrap voltage mode under-voltage protecting circuit,
Ⅳ：On-off control circuit.
Specific embodiment
Technical scheme is described further below in conjunction with the accompanying drawings.
As Figure 1-Figure 2, a kind of pressure nmos switch control circuit wide of method of the present invention, the circuit performs electricity including break-make
Road, the on-off control circuit includes PMOS V1, power tube V2, voltage-stabiliser tube V4, voltage-stabiliser tube V6, thermistor F2 and capacitance-resistance
Network；The circuit also includes being used to for the IO control signals of processor to be converted to actual high drive switch controlling signal, with
Realize driving the on-off control circuit, and the break-make control to whole circuit isolation control circuit；For preventing rear end
Power tube gate-source voltage superpressure, causes bootstrap voltage mode overpressure protection circuit that power tube superpressure is burnt and for preventing rear end
Power tube gate-source voltage not enough, causes rear end power tube to enter amplification region, it is impossible to effectively opens, causes power tube excessively stream, mistake
The bootstrap voltage mode under-voltage protecting circuit that heat is burnt；
The control of the isolation control circuit and the break-make execution circuit is connected, the bootstrap voltage mode overpressure protection circuit and bootstrapping
Under-voltage protection circuit is arranged between the isolation control circuit and the break-make execution circuit.
The isolation control circuit includes optocoupler B1, PNP triode V8 and resistance-capacitance network, and first resistance-capacitance network includes
Resistance R12 and resistance R15；
The bootstrap voltage mode overpressure protection circuit include NPN triode V7, can breakdown diode V9 and the second resistance-capacitance network, it is described
Second resistance-capacitance network includes resistance R16 and resistance R17；
The bootstrap voltage mode under-voltage protecting circuit includes comparator U1, NPN triode V3 and resistance-capacitance network, the resistance-capacitance network bag
Include resistance R2, resistance R6, resistance R3 and resistance R7；
The on-off control circuit includes PMOS V1, resistance R10, resistance R9, resistance R11, resistance R13, voltage-stabiliser tube V4, voltage stabilizing
Pipe V6, V2 and thermistor F2, resistance R10 and resistance R13 are bootstrap voltage mode divider resistance, and voltage-stabiliser tube V4 is PMOS V1's
Grid source overvoltage protection diode；
Wherein, one end of the resistance R12 is connected with controller, and the other end is connected with first stitch of the optocoupler B1, described
Second stitch of optocoupler B1 is by ground connection, and the 3rd stitch of the optocoupler B1 is connected with the base stage of the PNP triode V8, described
The colelctor electrode of PNP triode V8 is connected with the grid of the PMOS V1, the source of the resistance R10 and V4 and PMOS V1
Pole and gate connected in parallel, described resistance R15 one end are connected with the base stage of the PNP triode V8, other end ground connection, the optocoupler B1
The 4th stitch be connected with the source electrode of the PMOS V1 and the emitter stage of the PNP triode V7 respectively, the resistance R16's
One end is connected with the emitter stage of the PNP triode V7, the base stage of the PNP triode V7 and the diac V9
The connection of the 3rd stitch, the colelctor electrode of the PNP triode V7 is connected with the grid of the PMOS V1, described two-way to puncture two
Second stitch of pole pipe V9 is connected with the other end of the resistance R16 and one end of the resistance R17, the resistance R17's
The other end is grounded, and described resistance R2 one end is connected with input VIN, and the other end is connected with the 5th pin positive input terminal of comparator U1,
Described resistance R6 one end ground connection, the other end is connected with the 5th pin positive input terminal of the comparator U1, described resistance R3 one end and V_
BOOST is connected, and the other end be connected with the 6th pin negative input end of the comparator U1, resistance R7 one end ground connection, the other end and
The 6th pin negative input end connection of the comparator U1, the 7th stitch output end and the NPN triode V3 of the comparator U1
Base stage connection, the grounded emitter of the NPN triode V3, the colelctor electrode of the NPN triode V3 passes through resistance R1 and institute
State the base stage connection of PNP triode V7.The grid of the PMOS V1 is connected by resistance R13 with VIN, the resistance R10 with
Voltage-stabiliser tube V4 is parallel between the grid of PMOS V1 and source electrode, and the drain electrode of the PMOS V1 is by resistance R9 and power tube V2
Grid connection, the resistance R11 and voltage-stabiliser tube V6 be parallel to the grid of power tube V2 and drain electrode between, the power tube V2's
Source electrode is connected with VIN, and the drain electrode of the power tube V2 is connected by thermistor F2 with output VOUT.
Principle of the invention is：
Optocoupler control change-over circuit is made up of resistance R12, optocoupler B1, PNP triode V8, resistance R15, is PNP triode V8, collection
Electrode and emitter are respectively connecting to the source electrode and grid of PMOS V1, and resistance R15 is base stage current-limiting resistance, and optocoupler B1 is by control
The emitter stage of V8 processed and the break-make of base stage are so as to control the break-make of the emitter and collector of PNP triode V8.This circuit module
Acted on by the diode clamp of PNP triode V8, the output end voltage pressure voltage demand to optocoupler B1 is relatively low, therefore the module
Pressure voltage is high.
2nd, bootstrap voltage mode overpressure protection circuit：
Bootstrap voltage mode overvoltage crowbar is made up of V7, V9, resistance R16, resistance R17, and diode V9 punctures two poles for two-sided
Pipe, V7 is PNP triode, by reasonable selection resistance R16, the electric resistance partial pressure resistance of resistance R17, can be in bootstrap voltage mode superpressure
Puncture V9, so as to cause V7 colelctor electrodes and emitter to turn on, it is ensured that rear end PMOS V1 is closed, so as to ensure rear class
Power tube V2 is turned off.
3rd, bootstrap voltage mode under-voltage protecting circuit：
Bootstrap voltage mode under-voltage protecting circuit is mainly including potential-divider network circuit, comparator circuit, logic reversal circuit etc..Resistance
R2, resistance R6, resistance R3, resistance R7 composition potential-divider networks, U1 use comparator chip detection bootstrap voltage mode VBOOST and VIN,
7 pin are dragged down when bootstrap voltage mode exceedes more than VIN voltage 6V, and then it is low to control NPN triode V3 base stages.Resistance R1, V3 are common
With composition OC output logic reversal devices, it is ensured that V3 is output as low level during system electrification, after bootstrap voltage mode is booted successfully
V3 is output as high-impedance state, and then controls V7 base stages, PMOS V1 is turned off when bootstrap voltage mode is not up to normal value, in bootstrap voltage mode
Release control power is controlled the switch of rear class power tube by other control circuits after booting successfully.
Input supply voltage is terminated by resistance R13 resistance one simultaneously, cannot when bootstrap voltage mode is low compared with input voltage
Open PMOS V1.
4th, on-off control circuit：
On-off control circuit is made up of PMOS V1, resistance R10, voltage-stabiliser tube V4, resistance R13, and resistance R10 and resistance R13 is certainly
Voltage resistance is lifted, V4 is the grid source overvoltage protection diode of V1.From analysis, Rational choice high withstand voltage PMOS V1 can
Significantly improve the pressure voltage of this circuit.
Resistance R9, resistance R11, voltage-stabiliser tube V6, power tube V2, thermistor F2 are back-end circuit protection device, electricity simultaneously
Resistance R9 and resistance R11 is divider resistance, and V6 is the grid source overvoltage protection diode of power tube V2.F2 insures for self- recoverage, can rise
To the effect of system overcurrent protection.
To sum up shown, the present invention is by reasonable circuit design, and it is pressure-resistant to significantly improve circuit, raising power adaptation model
Enclose.The present invention takes into full account isolation, bootstrapping superpressure, under-voltage protection, overcurrent protection, greatly improves system application reliability.This
Invention in the case of single bootstrap voltage mode can multidiameter delay use, occasion with variable connector distribution can be applied, improve reality
The property used.Unspecified part of the present invention belongs to general knowledge as well known to those skilled in the art.
Claims (8)
1. a kind of wide pressure nmos switch control circuit, the circuit includes break-make execution circuit, and the on-off control circuit includes
PMOS V1, power tube V2, voltage-stabiliser tube V4, voltage-stabiliser tube V6, thermistor F2 and resistance-capacitance network；Characterized in that, the circuit is also
Including：Isolation control circuit, bootstrap voltage mode overpressure protection circuit and bootstrap voltage mode under-voltage protecting circuit,
The isolation control circuit is used to for the IO control signals of processor to be converted to actual high drive switch controlling signal,
To realize driving the on-off control circuit, and the break-make control to whole circuit；；
The bootstrap voltage mode overpressure protection circuit is used to prevent rear end power tube gate-source voltage superpressure, causes power tube superpressure to be burnt
Ruin and：
The bootstrap voltage mode under-voltage protecting circuit is used to prevent rear end power tube gate-source voltage inadequate, causes rear end power tube to enter
Enter amplification region, it is impossible to effectively open, cause power tube excessively stream, overheat to be burnt；
Wherein, the isolation control circuit is connected with break-make execution circuit control, the bootstrap voltage mode overpressure protection circuit
And bootstrap voltage mode under-voltage protecting circuit is arranged between the isolation control circuit and the break-make execution circuit.
2. control circuit according to claim 1, it is characterised in that the isolation control circuit includes optocoupler B1, PNP tri-
Pole pipe V8 and the first resistance-capacitance network, first resistance-capacitance network include resistance R12 and resistance R15, one end of the resistance R12 with
Controller is connected, and the other end of the resistance R12 is connected with first stitch of the optocoupler B1, second stitch of the optocoupler B1
Ground connection, the emitter stage of the 3rd stitch of the optocoupler B1 respectively with the PNP triode V8 be connected, described resistance R15 one end and
The base stage connection of the PNP triode V8, other end ground connection, the colelctor electrode of the PNP triode V8 and the source electrode of PMOS V1
Connection.
3. control circuit according to claim 2, it is characterised in that the resistance R15 is base stage current-limiting resistance.
4. control circuit according to claim 1, it is characterised in that the bootstrap voltage mode overpressure protection circuit includes NPN
Triode V7, it is two-sided can breakdown diode V9 and the second resistance-capacitance network, second resistance-capacitance network include resistance R16 and resistance
R17；The source electrode of the NPN triode V7 is connected with one end of the resistance R16, the base stage of the NPN triode V7 with it is described
It is two-sided can breakdown diode V9 the connection of the 3rd stitch, it is described can breakdown diode V9 the first stitch and the second stitch and institute
State the other end connection of resistance R16, one end of the resistance R17 is connected to the resistance R16 and described two-sided punctures two poles
Between first stitch and the second stitch of pipe V9.
5. control circuit according to claim 1, it is characterised in that the bootstrap voltage mode under-voltage protecting circuit includes comparing
Device U1, NPN triode V3 and the 3rd resistance-capacitance network, the 3rd resistance-capacitance network include resistance R2, resistance R6, resistance R3 and resistance
R7；Described resistance R2 one end is connected with VIN inputs, and the other end is connected with the 5th stitch positive input terminal of comparator U1, the electricity
One end ground connection of R6 is hindered, the other end is connected with the electrode input end of the comparator U1, and described resistance R3 one end connects with V_BOOST
Connect, the other end is connected with the negative input of the comparator U1, described resistance R7 one end ground connection, the other end and the comparator
The 6th pin negative input end connection of U1, the 7th stitch output end of the comparator U1 is connected with the base stage of the NPN triode V3,
The grounded emitter of the NPN triode V3, the colelctor electrode of the NPN triode V3 passes through resistance R1 and the PNP triode
The base stage connection of V7.
6. control circuit according to claim 1, it is characterised in that the resistance-capacitance network include resistance R9, resistance R10,
Resistance R11 and resistance R13；The grid of the PMOS V1 is by resistance R13 and input VINConnection, the drain electrode of the PMOS V1
It is connected with the grid of power tube V2 by resistance R9, the resistance R11 and voltage-stabiliser tube V6 is parallel to grid and the leakage of power tube V2
Between pole, the resistance R10 and voltage-stabiliser tube V4 are parallel between the grid of PMOS V1 and source electrode, the source electrode of the power tube V2
With input VINConnection, the drain electrode of the power tube V2 is by thermistor F2 and output VOUTConnection.
7. control circuit according to claim 6, it is characterised in that the resistance R9 and resistance R11 is divider resistance, institute
State resistance R10 and resistance R13 bootstrap voltage mode divider resistances.
8. control circuit according to claim 6, it is characterised in that the thermistor F2 is self- recoverage insurance, can be risen
To the effect of system overcurrent protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710011386.XA CN106849926B (en) | 2017-01-06 | 2017-01-06 | Wide-voltage NMOS switch control circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710011386.XA CN106849926B (en) | 2017-01-06 | 2017-01-06 | Wide-voltage NMOS switch control circuit |
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| CN106849926B CN106849926B (en) | 2020-08-11 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113676064A (en) * | 2021-08-25 | 2021-11-19 | 天水七四九电子有限公司 | Power supply starting current limiting circuit of high-power module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108736869A (en) * | 2018-04-27 | 2018-11-02 | 深圳市费思泰克科技有限公司 | Electronic load metal-oxide-semiconductor driver protects circuit |
| CN113676064A (en) * | 2021-08-25 | 2021-11-19 | 天水七四九电子有限公司 | Power supply starting current limiting circuit of high-power module |
| CN113676064B (en) * | 2021-08-25 | 2023-07-07 | 天水七四九电子有限公司 | High-power module power supply startup current limiting circuit |
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