CN206790353U - A kind of isolating transformer drive circuit - Google Patents
A kind of isolating transformer drive circuit Download PDFInfo
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- CN206790353U CN206790353U CN201720569940.1U CN201720569940U CN206790353U CN 206790353 U CN206790353 U CN 206790353U CN 201720569940 U CN201720569940 U CN 201720569940U CN 206790353 U CN206790353 U CN 206790353U
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Abstract
The utility model embodiment is related to a kind of isolating transformer drive circuit, including：Push-pull circuit, blocking device, transformer, signal drive circuit, charge-discharge circuit and drive control circuit；Wherein, push-pull circuit one terminates drive signal, one end of another termination block isolating device part, the primary side of another termination transformer of blocking device, the secondary of transformer connects signal drive circuit, charge-discharge circuit and drive control circuit respectively, charge-discharge circuit and drive control circuit are all connected with signal drive circuit, and charge-discharge circuit is connected with drive control circuit.The lossless voltage magnitude that the isolating transformer drive circuit that the utility model embodiment proposes realizes isolating transformer original secondary by electric capacity and diode drives, suitable for the situation of any driving pulse dutycycle.
Description
Technical field
The utility model belongs to drive circuit technical field, and in particular to a kind of isolating transformer drive circuit.
Background technology
Traditional isolating transformer drive circuit is as shown in figure 1, including N-channel FET Q1, PNP triode Q2, NPN
Triode Q3, PNP triode Q4, capacitance C2, transformer T1, diode D1, resistance R1, resistance R2 and resistance R3；Its
In, NPN triode Q3 base stage B and PNP triode Q4 base stage B are connected with drive pulse signal, NPN triode Q3 hair
Emitter-base bandgap grading E is connected with PNP triode Q4 emitter E, NPN triode Q3 colelctor electrode C connection power supply VCC, PNP triode Q4's
Colelctor electrode C meets signal ground SGND, NPN triode Q3 and PNP triode Q4 and forms typical push-pull circuit；NPN triode Q3's
Emitter E is connected with PNP triode Q4 emitter E, and the Same Name of Ends of transformer T1 primary sides, transformer are connect by capacitance C2
The different name termination signal of T1 primary sides SGND, the transformer T1 turn ratio be generally 1：1；The Same Name of Ends of transformer T1 secondary passes through all the way
Cross diode D1, resistance R1 connects N-channel FET Q1 grid G, N-channel FET Q1 source ground GND, transformer
The Same Name of Ends another way of T1 secondary passes through resistance R2 connection PNP triodes Q2 base stage B, and PNP triode Q2 emitter E meets N
Channel field-effect pipe Q1 grid G, PNP triode Q2 colelctor electrode C ground connection GND, resistance R3 are connected to PNP triode Q2 hair
Between emitter-base bandgap grading E and colelctor electrode C, the different name end ground connection GND of transformer T1 secondary.
When drive pulse signal is high level, PNP triode Q4 cut-offs, NPN triode Q3 conductings, by capacitance
C2 driving transformers T1 primary side, the induced voltage Vs of the Same Name of Ends of transformer T1 secondary is high level, diode D1 conductings, is felt
The tunnels of voltage Vs mono- are answered to be input to N-channel FET Q1 grid G, N-channel FET Q1 by diode D1 and resistance R1
Grid G and source S between voltage Vgs be more than conducting voltage, make N-channel FET Q1 turn on；Induced voltage Vs is another
By resistance R2 input PNP triodes Q2 base stage B, PNP triode Q2 base stage B is high level, makes PNP triode Q2 anti-on road
To cut-off；
When drive pulse signal is low level, NPN triode Q3 cut-offs, PNP triode Q4 conductings, by capacitance
C2 driving transformers T1 primary side, the induced voltage Vs of the Same Name of Ends of transformer T1 secondary is low level, and diode D1 ends；Sense
Base stage B of the voltage Vs another ways by resistance R2 input PNP triodes Q2 is answered, PNP triode Q2 base stage B is low level, is made
PNP triode Q2 fast conductings, the voltage Vgs between N-channel FET Q1 grid G and source S are less than conducting voltage, made
N-channel FET Q1 is turned off.C3 is N-channel FET Q1 equivalent junction capacitance in Fig. 1.
In the opening process of the push-pull circuit, due to capacitance C2 presence, become in driving pulse dutycycle
During change, capacitance C2 pressure drop Vc2 can also be changed, Vc2=Vdrv*Duty, correspondingly, the induced electricity of transformer T1 secondary
Pressure Vs is Vs=Vdrv-Vdrv*Duty.When dutycycle Duty is larger, the induced voltage Vs decay of transformer T1 secondary is larger,
The driving voltage of N-channel FET Q1 Vgs driving voltage amplitude, i.e. N-channel FET Q1 Vgs can be directly affected
Amplitude can be restricted by dutycycle, cause driving voltage amplitude deficiency or driving force it is weak the problems such as.
Utility model content
It is weak in order to solve the bigger caused driving voltage amplitude deficiency of the duty of above-mentioned capacitance or driving force
The problem of, the utility model embodiment proposes a kind of isolating transformer drive circuit.
A kind of isolating transformer drive circuit, including：Push-pull circuit, blocking device, transformer, signal drive circuit, fill
Discharge circuit and drive control circuit；Wherein, the termination of push-pull circuit one drive signal, one end of another termination block isolating device part, every
The primary side of another termination transformer of straight device, the secondary of transformer connect signal drive circuit, charge-discharge circuit and driving respectively
Control circuit, charge-discharge circuit and drive control circuit are all connected with signal drive circuit, charge-discharge circuit and drive control circuit
Connection.
Further, the signal drive circuit includes the first diode, first resistor and N-channel FET；Transformation
The Same Name of Ends first via of device secondary connects the positive pole of the first diode, and the negative pole of the first diode connects one end of first resistor, the
The grid of another termination N-channel FET of one resistance, the source ground of N-channel FET；The different name of transformer secondary
End ground connection.
Further, the charge-discharge circuit includes the first electric capacity and the second diode；The Same Name of Ends of transformer secondary
Two tunnels connect one end of the first electric capacity, the positive pole of the diode of another termination second of the first electric capacity, and the negative pole of the second diode meets N
The grid of channel field-effect pipe.
Further, the drive control circuit includes second resistance, the first PNP triode and the 3rd diode；Transformation
One end of the tunnel of Same Name of Ends the 3rd connection second resistance of device secondary, the other end of second resistance connect the another of the first electric capacity simultaneously
End and the base stage of the first PNP triode, the emitter stage of the first PNP triode meet the grid of N-channel FET, the first PNP tri-
The colelctor electrode of pole pipe connects the positive pole of the 3rd diode, the negative pole ground connection of the 3rd diode.
Further, the push-pull circuit includes NPN triode and the second PNP triode；Wherein, the base of NPN triode
The base stage of pole and the second PNP triode is connected with drive pulse signal, the emitter stage of NPN triode and the second PNP triode
Emitter stage be connected, the colelctor electrode of NPN triode connection power supply, the colelctor electrode of the second PNP triode connects signal ground.
Further, one end phase of the emitter stage of the emitter stage of NPN triode and the second PNP triode with the second electric capacity
Even, the Same Name of Ends of another termination transformer primary side of the second electric capacity, the different name termination signal of transformer primary side.
Further, the isolating transformer drive circuit also includes current-limiting circuit, and the current-limiting circuit includes the 3rd electricity
Resistance, 3rd resistor is between the emitter stage and ground of the first PNP triode.
Further, the isolating transformer drive circuit also includes current-limiting circuit, current-limiting circuit and signal drive circuit,
Charge-discharge circuit connects with drive control circuit.
Further, the current-limiting circuit includes 3rd resistor.
The beneficial effect of the utility model embodiment：The isolating transformer drive circuit that the utility model embodiment proposes exists
Electric capacity C1, diode D2 and diode D3 these three devices are added on the basis of conventional isolating transformers drive circuit, are passed through
Diode D3 optimizes the quick negative pressure shut-off of switching tube (i.e. N-channel FET Q1), real by electric capacity C1 and diode D2
The lossless voltage magnitude driving of isolating transformer original secondary is showed so that the isolating transformer that the utility model embodiment proposes drives
Dynamic circuit is all suitable in the case of any dutycycle.In addition, the isolating transformer driving electricity that the utility model embodiment proposes
Road is also recycled the excitatory energy of voltage amplitude at capacitance C2 both ends, improves isolating transformer drive circuit
Efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of conventional isolating transformers drive circuit；
Fig. 2 is the structural representation for the isolating transformer drive circuit that the utility model embodiment proposes.
Embodiment
For the purpose of this utility model, technical scheme and advantage is more clearly understood, below in conjunction with specific embodiment, and
Referring to the drawings, the utility model is further described.But those skilled in the art know, the utility model is not limited to
Accompanying drawing and following examples.
The isolating transformer drive circuit that the utility model embodiment proposes is as shown in Fig. 2 including N-channel FET
Q1, the first PNP triode Q2, NPN triode Q3, the second PNP triode Q4, the first electric capacity C1, the second electric capacity C2, transformer
T1, the first diode D1, the second diode D2, the 3rd diode D3, first resistor R1, second resistance R2 and 3rd resistor
R3。
Wherein, NPN triode Q3 base stage B and the second PNP triode Q4 base stage B are connected with drive pulse signal,
NPN triode Q3 emitter E is connected with the second PNP triode Q4 emitter E, NPN triode Q3 colelctor electrode C connections electricity
Source VCC, the second PNP triode Q4 colelctor electrode C connect signal ground SGND, NPN triode Q3 and the second PNP triode Q4 composition and pushed away
Draw circuit.
One end phase of NPN triode Q3 emitter E and the second PNP triode Q4 emitter E with the second electric capacity C2
Even, the Same Name of Ends of the second electric capacity C2 another termination transformer T1 primary sides, the different name termination signal of transformer T1 primary sides ground SGND,
The transformer T1 turn ratio is generally 1：1.
The Same Name of Ends first via of transformer T1 secondary connects the first diode D1 positive pole, and the first diode D1 negative pole connects
First resistor R1 one end, first resistor R1 another termination N-channel FET Q1 grid G, N-channel FET Q1's
Source ground GND.The different name end ground connection GND of transformer T1 secondary.C3 is N-channel FET Q1 equivalent junction capacitance in Fig. 2.
The tunnel of Same Name of Ends second of transformer T1 secondary connects the first electric capacity C1 one end, the first electric capacity C1 another termination the
Two diode D2 positive pole, the second diode D2 negative pole connect N-channel FET Q1 grid G.
The tunnel of Same Name of Ends the 3rd connection second resistance R2 of transformer T1 secondary one end, the second resistance R2 other end is simultaneously
The the first electric capacity C1 other end and the first PNP triode Q2 base stage B are connected, the first PNP triode Q2 emitter E connects N ditches
Road FET Q1 grid G, the first PNP triode Q2 diode D3 of colelctor electrode C connections the 3rd positive pole, the 3rd diode
D3 negative pole ground connection GND.
3rd resistor R3 is connected between the first PNP triode Q2 emitter E and ground GND.Under 3rd resistor R3 is used as
Pull-up resistor, main function are shunting action.
The isolating transformer drive circuit that the utility model embodiment proposes is in traditional isolating transformer drive circuit
On add electric capacity C1, diode D2 and tri- devices of triode D3, the circuit operation principles of voltage device T1 primary sides and tradition every
It is the same from the circuit operation principle of transformer drive circuit, push-pull circuit is all formed by triode Q3 and Q4, through capacitance
C2 driving transformers T1 primary side, the general driving transformer T1 turn ratio is 1：1.In push-pull circuit opening process, due to every
Straight electric capacity C2 presence, when driving pulse change in duty cycle, capacitance C2 pressure drop can also change, i.e. Vc2=
Vdrv*Duty；When dutycycle Duty is larger, the voltage for sensing transformer T1 secondary is Vs=Vdrv-Vdrv*Duty.
When drive pulse signal is changed into high level from low level, the second PNP triode Q4 cut-offs, NPN triode Q3 is led
Logical, by the second electric capacity C2 driving transformers T1 primary side, the induced voltage Vs of the Same Name of Ends of transformer T1 secondary is high level；
For the Same Name of Ends first via of transformer T1 secondary, the first diode D1 conductings, induced voltage Vs by the first diode D1 and
First resistor R1 is input to N-channel FET Q1 grid G, simultaneously for the tunnel of Same Name of Ends second of transformer T1 secondary, sense
Voltage Vs is answered to be input to N-channel FET Q1 grid G by the first electric capacity C1 and the second diode D2, it is fast by this two-way
Speed charges to N-channel FET Q1, so that N-channel FET Q1 fast conductings.For the same of transformer T1 secondary
The name tunnel of end the 3rd, induced voltage Vs input the first PNP triode Q2 base stage B, the first PNP triode Q2 by second resistance R2
Base stage B be high level so that the first PNP triode Q2 reversely ends.
When drive pulse signal is changed into low level from high level, NPN triode Q3 cut-offs, the second PNP triode Q4 is led
Logical, by the second electric capacity C2 driving transformers T1 primary side, the induced voltage of the Same Name of Ends of transformer T1 secondary is low level.It is right
In the Same Name of Ends first via of transformer T1 secondary, the first diode D1 cut-offs；For the tunnel of Same Name of Ends the 3rd of transformer T1 secondary,
The base stage B that induced voltage Vs inputs the first PNP triode Q2 base stage B, the first PNP triode Q2 by second resistance R2 is low
Level, the first PNP triode Q2 conductings, N-channel FET Q1 are quick through the 3rd triode D3 by the first PNP triode Q2
Electric discharge.Simultaneously for the tunnel of Same Name of Ends second of transformer T1 secondary, because the first PNP triode Q2 is turned on, the second diode D2
Cut-off, the 3rd triode D3 cut-offs, but the presence of the equivalent junction capacitance C3 due to N-channel FET Q1, in transformer T1 pairs
When the induced voltage of the Same Name of Ends on side is low level, as shown in Fig. 2 the reverse induction electromotive force of voltage device T1 secondary for it is lower just on
Equivalent junction capacitance C3 and the first PNP tri- negative, that the induced voltage of the Same Name of Ends of transformer T1 secondary passes through N-channel FET Q1
Pole pipe Q2 emitter E is with base stage B PN junction to the first electric capacity C1 reverse chargings, the first electric capacity C1 charging voltages as shown in Figure 2
For the negative right side in a left side just, size is the second electric capacity C2 of transformer T1 primary sides resetting voltage Vc2=Vdrv*Duty.
When drive pulse signal is changed into high level from low level again, due to the first electric capacity C1 in upper half period (i.e.
When high level is changed into low level) it has been charged to voltage Vc2 (the negative right side in a left side is just), N-channel FET Q1 grid G and source electrode
The moment turning-on voltage at S both ends is Vs+Vc2=Vdrv, it is achieved thereby that the lossless voltage amplitude of isolation drive transformer primary secondary
Value driving, wherein the 3rd diode D3 main function be allow transformer T1 secondary induced voltage charge circuit be by N-channel
FET Q1 equivalent junction capacitance C3, the first PNP triode Q2 emitter E and base stage B PN junction and the first electric capacity C1
The loop (see path shown in dotted lines in Figure 2) of composition, so as to which N-channel FET Q1 carrier all be taken away, realize
The negative pressure of FET reliably rapidly switches off.
The isolating transformer drive circuit that the utility model embodiment proposes is after transformation, when drive pulse signal is by low
When level is changed into high level, the induced voltage first via of transformer T1 secondary gives N ditches by the first diode D1, first resistor R1
Road FET Q1 Vgs chargings, N-channel FET Q1 is quickly given in the second tunnel by the first electric capacity C1 and the second diode D2
Vgs chargings, promote N-channel FET Q1 fast conductings, while the 3rd tunnel makes the first PNP triode by second resistance R2
Q2 BE pole tensions reversely end；When drive pulse signal is changed into low level from high level, the first PNP triode Q2 is quickly led
Logical, N-channel FET Q1 Vgs passes through the first PNP triode Q2 repid discharges.
Below with Vdrv=15V, exemplified by Duty=0.6, the isolating transformer that the utility model embodiment proposes is driven
Circuit is illustrated.
When Vdrv=15V, Duty=0.6, Vc2=Vdrv*Duty=9V.
In traditional isolation voltage device drive circuit, the Vgs=Vs=Vdrv-Vc2=15V-9V of N-channel FET
=6V, the driving voltage of traditional isolation voltage device drive circuit are less than normal under this dutycycle.
In the isolation voltage device drive circuit that the utility model embodiment proposes, C1 charging voltage Vc1=Vc2, N ditch
Vgs=Vs+Vc1=(Vdrv-Vc2)+Vc1=Vdrv=15V of road FET, so as to avoid dutycycle to isolation voltage
The influence of the driving voltage of device drive circuit.
More than, embodiment of the present utility model is illustrated.But the utility model is not limited to above-mentioned implementation
Mode.All any modification, equivalent substitution and improvements within the spirit and principles of the utility model, done etc., should be included in
Within the scope of protection of the utility model.
Claims (9)
- A kind of 1. isolating transformer drive circuit, it is characterised in that including：Push-pull circuit, blocking device, transformer, signal drive Dynamic circuit, charge-discharge circuit and drive control circuit；Wherein, push-pull circuit one terminates drive signal, another termination block isolating device part One end, the primary side of another termination transformer of blocking device, the secondary of transformer connects signal drive circuit, discharge and recharge electricity respectively Road and drive control circuit, charge-discharge circuit and drive control circuit are all connected with signal drive circuit, charge-discharge circuit and driving Control circuit connects.
- 2. isolating transformer drive circuit according to claim 1, it is characterised in that the signal drive circuit includes the One diode, first resistor and N-channel FET；The Same Name of Ends first via of transformer secondary is connecting the first diode just Pole, the negative pole of the first diode connect one end of first resistor, the grid of another termination N-channel FET of first resistor, N ditches The source ground of road FET；The different name end ground connection of transformer secondary.
- 3. isolating transformer drive circuit according to claim 2, it is characterised in that the charge-discharge circuit includes first Electric capacity and the second diode；The tunnel of Same Name of Ends second of transformer secondary connects one end of the first electric capacity, the other end of the first electric capacity The positive pole of the second diode is connect, the negative pole of the second diode connects the grid of N-channel FET.
- 4. isolating transformer drive circuit according to claim 3, it is characterised in that the drive control circuit includes the Two resistance, the first PNP triode and the 3rd diode；One end of the tunnel of Same Name of Ends the 3rd connection second resistance of transformer secondary, The other end of second resistance connects the other end of the first electric capacity and the base stage of the first PNP triode simultaneously, the first PNP triode Emitter stage connects the grid of N-channel FET, and the colelctor electrode of the first PNP triode connects the positive pole of the 3rd diode, and the three or two The negative pole ground connection of pole pipe.
- 5. isolating transformer drive circuit according to claim 4, it is characterised in that the push-pull circuit includes NPN tri- Pole pipe and the second PNP triode；Wherein, the base stage of the base stage of NPN triode and the second PNP triode is and drive pulse signal It is connected, the emitter stage of NPN triode is connected with the emitter stage of the second PNP triode, the colelctor electrode connection power supply of NPN triode, The colelctor electrode of second PNP triode connects signal ground.
- 6. isolating transformer drive circuit according to claim 5, it is characterised in that the emitter stage of NPN triode and The one end of the emitter stage of two PNP triodes with the second electric capacity is connected, another termination transformer primary side of the second electric capacity it is of the same name End, the different name termination signal of transformer primary side.
- 7. isolating transformer drive circuit according to claim 6, it is characterised in that the isolating transformer drive circuit Also include current-limiting circuit, the current-limiting circuit includes 3rd resistor, emitter stage and ground of the 3rd resistor in the first PNP triode Between.
- 8. isolating transformer drive circuit according to any one of claim 1 to 6, it is characterised in that the isolation becomes Depressor drive circuit also includes current-limiting circuit, and current-limiting circuit connects with signal drive circuit, charge-discharge circuit and drive control circuit Connect.
- 9. isolating transformer drive circuit according to claim 8, it is characterised in that the current-limiting circuit includes the 3rd electricity Resistance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720569940.1U CN206790353U (en) | 2017-05-22 | 2017-05-22 | A kind of isolating transformer drive circuit |
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| CN201720569940.1U CN206790353U (en) | 2017-05-22 | 2017-05-22 | A kind of isolating transformer drive circuit |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108667444A (en) * | 2018-07-26 | 2018-10-16 | 深圳市蓝德汽车电源技术有限公司 | A kind of silicon carbide MOSFET driving circuit |
| CN109742952A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN109742953A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN110113035A (en) * | 2018-07-17 | 2019-08-09 | 北京工业大学 | A kind of high frequency power MOSFET driving circuit |
| CN110148799A (en) * | 2019-04-11 | 2019-08-20 | 华中科技大学 | A kind of switching device and switching method of lithium ion battery |
| CN110829849A (en) * | 2019-11-08 | 2020-02-21 | 济宁学院 | Frequency modulation topology no-load control circuit and control method thereof |
| CN111614239A (en) * | 2020-05-29 | 2020-09-01 | 科华恒盛股份有限公司 | Transformer driving circuit |
| CN111628635A (en) * | 2020-06-19 | 2020-09-04 | 西安微电子技术研究所 | Output isolation power supply driving circuit and method |
| CN114744867A (en) * | 2022-06-09 | 2022-07-12 | 深圳市高斯宝电气技术有限公司 | PFC boost circuit with parallel-connection interleaved CRM modes |
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2017
- 2017-05-22 CN CN201720569940.1U patent/CN206790353U/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110113035A (en) * | 2018-07-17 | 2019-08-09 | 北京工业大学 | A kind of high frequency power MOSFET driving circuit |
| CN110113035B (en) * | 2018-07-17 | 2023-01-13 | 北京工业大学 | High-frequency power MOSFET drive circuit |
| CN108667444A (en) * | 2018-07-26 | 2018-10-16 | 深圳市蓝德汽车电源技术有限公司 | A kind of silicon carbide MOSFET driving circuit |
| CN109742952A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN109742953A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN110148799A (en) * | 2019-04-11 | 2019-08-20 | 华中科技大学 | A kind of switching device and switching method of lithium ion battery |
| CN110829849A (en) * | 2019-11-08 | 2020-02-21 | 济宁学院 | Frequency modulation topology no-load control circuit and control method thereof |
| CN110829849B (en) * | 2019-11-08 | 2020-12-25 | 济宁学院 | Frequency modulation topology no-load control circuit and control method thereof |
| CN111614239A (en) * | 2020-05-29 | 2020-09-01 | 科华恒盛股份有限公司 | Transformer driving circuit |
| CN111614239B (en) * | 2020-05-29 | 2022-06-07 | 科华恒盛股份有限公司 | Transformer driving circuit |
| CN111628635A (en) * | 2020-06-19 | 2020-09-04 | 西安微电子技术研究所 | Output isolation power supply driving circuit and method |
| CN114744867A (en) * | 2022-06-09 | 2022-07-12 | 深圳市高斯宝电气技术有限公司 | PFC boost circuit with parallel-connection interleaved CRM modes |
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Effective date of registration: 20200408 Address after: 510530 Guangdong city of Guangzhou province YUNPU Whampoa district four Road No. 6 Patentee after: GUANGZHOU SHIYUAN ELECTRONICS Co.,Ltd. Address before: 510530 Guangdong city of Guangzhou province YUNPU Whampoa district four Road No. 6 Co-patentee before: GUANGZHOU RUIXIN ELECTRONICS Co.,Ltd. Patentee before: GUANGZHOU SHIYUAN ELECTRONICS Co.,Ltd. |
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