CN105811960B - A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor - Google Patents
A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor Download PDFInfo
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- CN105811960B CN105811960B CN201610120864.6A CN201610120864A CN105811960B CN 105811960 B CN105811960 B CN 105811960B CN 201610120864 A CN201610120864 A CN 201610120864A CN 105811960 B CN105811960 B CN 105811960B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
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- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The present invention relates to electronic circuit technology, more particularly to a kind of level displacement circuit for thin grid oxygen metal-oxide-semiconductor.The circuit of the present invention, difference compared to traditional level shift circuit is mainly, traditional high voltage level shift circuit does driving stage using thick grid oxygen metal-oxide-semiconductor, the level displacement circuit of the present invention does driving stage using thin grid oxygen metal-oxide-semiconductor, reduce the power attenuation of level displacement circuit, improve the working frequency of high voltage power supply converter.Beneficial effects of the present invention are; compared to original level displacement circuit structure; the level displacement circuit of the present invention is loaded using electric capacity; the grid of the first PMOS, the first power tube PMOS is protected using the second electric capacity, the 3rd electric capacity; so that grid voltage domain of walker is within 5V; thin grid oxygen metal-oxide-semiconductor can be applied in this circuit, so as to improve circuit performance.
Description
Technical field
The present invention relates to electronic circuit technology, more particularly to a kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor.
Background technology
Level displacement circuit is one of HVIC (high voltage integrated circuit) typical circuit, and due to its high reliability, area is small,
The features such as efficiency is high is widely used in intelligent vehicle-carried electronics, renewable energy system, high-brightness LED lamp system etc..For
Its power density is lifted, level displacement circuit must not be not operate at high switching frequency to reduce the size of passive device part；
In order to lift its power efficiency, it is necessary to realize ZVT to reduce the switching loss of level displacement circuit.Compared to thick grid
For oxygen high-voltage power metal-oxide-semiconductor, thin grid oxygen high-voltage power metal-oxide-semiconductor has low on-resistance, low subthreshold voltage.Therefore, thin grid
Oxygen high-voltage power metal-oxide-semiconductor can reduce the power attenuation of level displacement circuit, improve the working frequency of high voltage power supply converter.
Although thin grid oxygen high-voltage power MOS source-drain electrode can be high pressure resistant, thin grid oxygen result but causes it to hold
The gate source voltage very little received, typically in 5V or so.And to be required for high-voltage power metal-oxide-semiconductor to bear very high for current level displacement circuit
Gate source voltage value so that thin grid oxygen high-voltage power MOS application is hindered.
A kind of classical high voltage level shift circuit of comparison is as shown in figure 1, the Schmidt that input signal is connect including one touches
Send out device, 4 metal-oxide-semiconductors for forming level shift function and a phase inverter and the BJT pipes of partial pressure, electric capacity, resistance, together are provided
Receive diode, this circuit structure is simple, can well realize level shift function, but power tube PMOS need to bear it is higher
Grid voltage, thin grid oxygen power MOS pipe can not be applied in this circuit, so as to can not further improve circuit performance.
The content of the invention
The present invention is in view of the above-mentioned problems, propose a kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor.
Technical scheme：A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor, including the first electric capacity C1,
Two electric capacity C2, the 3rd electric capacity C3, the first Zener diode D1, the second Zener diode D2, first resistor R1, second resistance R2,
NPN triode NPN1, PMOS MP1, power tube PMOS PMP1, NMOS tube MN1, phase inverter and Schmidt trigger；It is described to apply
The input of schmitt trigger is the input of level displacement circuit；NPN triode NPN1 colelctor electrode connects power supply, and its base stage is led to
Cross first resistor R1 and be followed by power supply, NPN triode NPN1 emitter stage after the first electric capacity C1 by being grounded；NPN triode NPN1
Base stage and first resistor R1 tie point connect the first Zener diode D1 negative electrode, the first Zener diode D1 anode connects
Ground；NPN triode NPN1 emitter stage and the first electric capacity C1 tie point connect the power input of Schmidt trigger；Schmidt
The negative input end ground connection of trigger, it exports termination NMOS tube MN1 grid；PMOS MP1 source electrode connects power supply, and its grid leads to
Cross second resistance R2 and be followed by power supply；The tie point of PMOS MP1 grids and second resistance R2 is followed by Shi Mi by the second electric capacity C2
The output end of special trigger；PMOS MP1 drain electrode connects the second Zener diode D2 positive pole；Power tube PMOS PMP1 source electrode
Power supply is connect, its grid connects PMOS MP1 drain electrodes and the tie point of the second Zener diode D2 positive poles；Power tube PMOS PMP1 grid
The tie point of pole, PMOS MP1 drain electrodes and the second Zener diode D2 positive poles is followed by NMOS tube MN1 leakage by the 3rd electric capacity C3
Pole；NMOS tube MN1 source ground；The output end of the input termination Schmidt trigger of phase inverter, the output termination of phase inverter
Power NMOS tube PMN1 grid；Power NMOS tube PMN1 source ground, it, which drains, connects power tube PMOS PMP1 drain electrode；
NMOS tube PMN1 source electrodes and the output end that the tie point of power tube PMOS PMP1 drain electrodes is level displacement circuit.
Beneficial effects of the present invention are that, compared to original level displacement circuit structure, level displacement circuit of the invention makes
Loaded with electric capacity, the grid of the first PMOS, the first power tube PMOS protected using the second electric capacity, the 3rd electric capacity so that
Thin grid oxygen metal-oxide-semiconductor can be applied in this circuit, so as to improve circuit performance by grid voltage domain of walker within 5V.
Brief description of the drawings
Fig. 1 is a kind of existing classical level displacement circuit figure；
Fig. 2 is the theory diagram of embodiment；
Fig. 3 is the electrical block diagram of embodiment；
Fig. 4 is the simulation result logical schematic of embodiment；
Fig. 5 is the simulation result schematic diagram of embodiment.
Embodiment
The present invention is described in detail with reference to the accompanying drawings and examples
Embodiment
As shown in figure 3, the level displacement circuit suitable for thin grid oxygen metal-oxide-semiconductor of the present embodiment, including two resistance, two
Zener diode, a Schmidt trigger, three electric capacity, a phase inverter, a NMOS tube, a PMOS are one thin
Grid oxygen power NMOS tube, one thin grid oxygen power tube PMOS, the pressure voltage of the first Zener diode are 5.7V, the pole of the first Zener two
Pipe D1 provides forward bias for the first NPN pipes NPN1 so that the first NPN pipes NPN1 is in opening, and first resistor R1 is provided
Bias between first NPN pipe NPN1 base stages and colelctor electrode, the partial pressure value that the first electric capacity C1 is used to provide 5V is to schmidt trigger
Device does supply voltage, and Schmidt trigger is used for the shaping to input signal, TTL signal that input signal is 3.3V or 5V or
CMOS level signals, the second electric capacity C2 of Schmidt trigger output termination negative electrode, the second electric capacity C2 anode connect second resistance
R2 negative electrode, the second electric capacity C2 anode connect the first PMOS MP1 grid, and the anode of second resistance meets power supply VCC, the
One PMOS MP1 source electrode meets power supply VCC, and the first PMOS MP1 drain electrode connects the second Zener diode D2 anode, the
One PMOS MP1 drain electrode connects the 3rd electric capacity C3 anode, and the first PMOS MP1 drain meets the first thin grid oxygen PMOS PMP1
Grid, the source electrode that the second Zener diode D2 negative electrode meets power supply VCC, the first thin grid oxygen PMOS PMP1 connects power supply electricity
Source VCC, the output stage of Schmidt trigger connect the first NMOS tube MN1 grid, and it is anti-that the output stage of Schmidt trigger connects first
Phase device INV1 input stage, the first NMOS tube MN1 drain electrode connect the 3rd electric capacity C3 negative electrode, and the first NMOS tube MN1 source electrode connects
Ground, the first phase inverter INV1 output stage connect the first thin grid oxygen NMOS tube PMN1 grid, the first thin grid oxygen NMOS tube PMN1's
Source ground, the first thin grid oxygen NMOS tube PMN1 drain electrode connect the first thin grid oxygen PMOS PMP1 drain electrode, the first thin grid oxygen
PMOS PMP1 drain electrode and the first thin grid oxygen NMOS tube PMN1 drain electrode is output end.
Illustrate the operation principle of integrated circuit of the present invention by taking the present embodiment as an example：
In the present embodiment, the power supply VCC of circuit is 15V, and the power supply of Schmidt trigger is 5V, the pole of Zener two
Pressure-resistant 5.7V is managed, the first electric capacity C1 is 1pF, and the second electric capacity C2 is 1pF, and the 3rd electric capacity C3 is 3pF, and the output stage of this circuit uses
Thin grid oxygen metal-oxide-semiconductor, the function of level displacement circuit are that the output of high side circuitry low-pressure section is sent into high-pressure section, this electricity
Lu Zhong, load capacitance is to key component that the control section of thin grid oxygen metal-oxide-semiconductor is drive circuit.
When output signal is high level, the output signal of Schmidt trigger is high level, now the first PMOS MP1
Grid be high level, the first PMOS MP1 is closed, and will not carry out discharge and recharge, the first NMOS tube MN1 grid to the 3rd electric capacity C3
Extremely high level, the first NMOS tube MN1 conductings, the 3rd electric capacity C3 minus earth level, the 3rd electric capacity C3 both end voltages are constant, the
Three electric capacity C3 anode level are pulled low 5V, and the 3rd electric capacity C3 anodes level and power supply VCC difference is 5V, the first thin grid oxygen
PMOS PMP1 is turned on, and the first phase inverter INV1 input stage connects high level, exported as low level, the first thin grid oxygen PMOS
PMN1 grid is low level, and the first thin grid oxygen metal-oxide-semiconductor PMN1 shut-offs, output signal OUT is high level；When input signal is by height
During step-down, Schmidt trigger output low level, the second electric capacity C2 negative electrodes level is 0V, and the second electric capacity C2 anodes level is drawn
Low, the first PMOS MP1 is turned on simultaneously to charge to the 3rd electric capacity C3, and the first NMOS tube MN1 grid is low level, and first
NMOS tube MN1 is turned off, and the 3rd capacitor anode level high jump is simultaneously equal to power supply voltage VCC, the first thin grid oxygen PMOS PMP1
Shut-off, the first phase inverter INV1 input stages are low level, and output end is high level, and the first thin grid oxygen NMOS tube PMN1 grid is
High level, the first thin grid oxygen NMOS tube PMN1 conducting, output signal OUT is low level, so as to successfully completed level signal by
High to Low conversion.
Fig. 4 gives the simulation result logic chart of the embodiment, and the current potential of the 3rd electric capacity C3 anodes is with input signal
Saltus step and saltus step, the float level of the first thin grid oxygen PMOS grid is 10V-15V, float level be in safe pressure voltage with
It is interior.
The simulated conditions of the present embodiment are：Power supply VCC=15V；The first pressure-resistant 5.7V of Zener diode D1；Schmidt
Trigger supply voltage is 5V；Circuit input signal scope：0V~5V (3.3V), output signal range：0V-15V.Simulation result
As shown in figure 5, the purpose of lever-shifter is reached.
In summary, a kind of level displacement circuit suitable for thin grid oxygen metal-oxide-semiconductor of the present invention can be used as and partly lead
Basic circuit in body integrated circuit power electronic chip or driving chip, it is possible to achieve the raising to HVIC efficiencies.
Claims (1)
1. a kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor, including the first electric capacity (C1), the second electric capacity (C2), the 3rd electricity
Hold (C3), the first Zener diode (D1), the second Zener diode (D2), first resistor (R1), second resistance (R2), NPN tri-
Pole pipe (NPN1), PMOS (MP1), power tube PMOS (PMP1), NMOS tube (MN1), phase inverter and Schmidt trigger；It is described
The input of Schmidt trigger is the input of level displacement circuit；The colelctor electrode of NPN triode (NPN1) connects power supply, its base
Pole is followed by power supply by first resistor (R1), and the emitter stage of NPN triode (NPN1) is grounded afterwards by the first electric capacity (C1)；NPN
The base stage of triode (NPN1) connects the first Zener diode (D1) negative electrode, the first Zener two with the tie point of first resistor (R1)
The plus earth of pole pipe (D1)；The emitter stage of NPN triode (NPN1) and the tie point of the first electric capacity (C1) connect schmidt trigger
The power input of device；The negative input end ground connection of Schmidt trigger, it exports the grid of termination NMOS tube (MN1)；PMOS
(MP1) source electrode connects power supply, and its grid is followed by power supply by second resistance (R2)；PMOS (MP1) grid and second resistance
(R2) tie point is followed by the output end of Schmidt trigger by the second electric capacity (C2)；The drain electrode of PMOS (MP1) connects second
The positive pole of Zener diode (D2)；The source electrode of power tube PMOS (PMP1) connects power supply, and its grid connects PMOS (MP1) drain electrode and the
The tie point of two Zener diodes (D2) positive pole；Power tube PMOS (PMP1) grid, PMOS (MP1) drain electrode and the second Zener two
The tie point of pole pipe (D2) positive pole is followed by NMOS tube (MN1) drain electrode by the 3rd electric capacity (C3)；The source electrode of NMOS tube (MN1) connects
Ground；The output end of the input termination Schmidt trigger of phase inverter, the grid of the output termination power NMOS tube (PMN1) of phase inverter
Pole；The source ground of power NMOS tube (PMN1), it, which drains, connects power tube PMOS (PMP1) drain electrode；NMOS tube (PMN1) source electrode
Tie point with power tube PMOS (PMP1) drain electrode is the output end of level displacement circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610120864.6A CN105811960B (en) | 2016-03-03 | 2016-03-03 | A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610120864.6A CN105811960B (en) | 2016-03-03 | 2016-03-03 | A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor |
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| CN105811960A CN105811960A (en) | 2016-07-27 |
| CN105811960B true CN105811960B (en) | 2018-01-09 |
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| CN201610120864.6A Expired - Fee Related CN105811960B (en) | 2016-03-03 | 2016-03-03 | A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341119B (en) * | 2016-09-06 | 2019-06-28 | 珠海全志科技股份有限公司 | Level shift circuit |
| CN110535459B (en) * | 2019-09-30 | 2024-07-26 | 广州安凯微电子股份有限公司 | Digital level conversion circuit based on low-voltage CMOS (complementary metal oxide semiconductor) process |
| CN113014077B (en) * | 2021-03-30 | 2022-06-28 | 国硅集成电路技术(无锡)有限公司 | High-voltage PN bridge gate driving circuit |
| CN113541676A (en) * | 2021-08-10 | 2021-10-22 | 宜矽源半导体南京有限公司 | Low-power consumption high-voltage level shift circuit |
| CN114448215A (en) * | 2022-01-25 | 2022-05-06 | 深圳市诚芯微科技股份有限公司 | Power tube driving circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105522A (en) * | 1986-10-22 | 1988-05-10 | Nec Corp | High voltage digital signal output circuit |
| CN102769454A (en) * | 2012-06-30 | 2012-11-07 | 东南大学 | Noise interference-proof high-side gate drive circuit |
| CN102843123A (en) * | 2012-08-31 | 2012-12-26 | 电子科技大学 | High-voltage driving circuit |
-
2016
- 2016-03-03 CN CN201610120864.6A patent/CN105811960B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105522A (en) * | 1986-10-22 | 1988-05-10 | Nec Corp | High voltage digital signal output circuit |
| CN102769454A (en) * | 2012-06-30 | 2012-11-07 | 东南大学 | Noise interference-proof high-side gate drive circuit |
| CN102843123A (en) * | 2012-08-31 | 2012-12-26 | 电子科技大学 | High-voltage driving circuit |
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| CN105811960A (en) | 2016-07-27 |
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