CN105811960A - Level shifting circuit using thin gate oxide MOS tubes - Google Patents
Level shifting circuit using thin gate oxide MOS tubes Download PDFInfo
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- CN105811960A CN105811960A CN201610120864.6A CN201610120864A CN105811960A CN 105811960 A CN105811960 A CN 105811960A CN 201610120864 A CN201610120864 A CN 201610120864A CN 105811960 A CN105811960 A CN 105811960A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
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- Computer Hardware Design (AREA)
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- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The invention relates to the technology of electric circuits, more particularly to a level shifting circuit using thin gate oxide MOS tubes. The circuit provided in the invention distinguishes itself from others in that thin gate oxide MOS tubes are used to constitute its driving stage rather than thick gate oxide MOS tubes seen in traditional high-voltage level shifting circuits. The adoption of thin gate oxide MOS tubes reduces the power consumption of the level shifting circuit while increasing the work frequency of a high voltage supply converter. Compared to available level shifting circuits, the level shifting circuit provided by the invention uses capacitance as its load, and utilizes the second capacitance and the third capacitance to protect the gates of the first PMOS tube and the first power PMOS tube so that the voltage at the gates remains to be within 5V and that thin gate oxide MOS tubes can be compatible with the circuit. In this manner, the performances of the circuit improve.
Description
Technical field
The present invention relates to electronic circuit technology, particularly to a kind of level displacement circuit for thin grid oxygen metal-oxide-semiconductor.
Background technology
Level displacement circuit is one of typical circuit of HVIC (high voltage integrated circuit), and due to its high reliability, area is little, and efficiency high is widely used in the aspects such as intelligent vehicle-carried electronics, renewable energy system, high-brightness LED lamp system.In order to promote its power density, level displacement circuit is had to the size being operated in high switching frequency to reduce passive device part；In order to promote its power efficiency, it is necessary to realize ZVT to reduce the switching loss of level displacement circuit.Comparing thick grid oxygen high-voltage power metal-oxide-semiconductor, thin grid oxygen high-voltage power metal-oxide-semiconductor has low on-resistance, low subthreshold voltage.Therefore, thin grid oxygen high-voltage power metal-oxide-semiconductor can reduce the power attenuation of level displacement circuit, improves the operating frequency of high voltage power supply transducer.
Although the source-drain electrode of thin grid oxygen high-voltage power MOS is capable of withstanding high pressure, but thin grid oxygen result causes that its gate source voltage that can bear is only small, is typically in about 5V.And current level displacement circuit is required for high-voltage power metal-oxide-semiconductor and bears significantly high gate source voltage value so that the application of thin grid oxygen high-voltage power MOS is hindered.
The classical high voltage level shift circuit of a kind of comparison is as shown in Figure 1, connect the Schmidt trigger of input signal, 4 metal-oxide-semiconductors constituting level shift function and a phase inverter including one and the BJT pipe of dividing potential drop, electric capacity, resistance, Zener diode are provided, this circuit structure is simple, can be good realize level shift function, but power tube PMOS needs to bear higher grid voltage, circuit performance thin grid oxygen power MOS pipe cannot be applied in this circuit, thus cannot be improved further.
Summary of the invention
The present invention is directed to the problems referred to above, it is proposed to a kind of level displacement circuit for thin grid oxygen metal-oxide-semiconductor.
Technical scheme: a kind of level displacement circuit for thin grid oxygen metal-oxide-semiconductor, including the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the first Zener diode D1, the second Zener diode D2, the first resistance R1, second resistance R2, NPN audion NPN1, PMOS MP1, power tube PMOS PMP1, NMOS tube MN1, phase inverter and Schmidt trigger；The input of described Schmidt trigger is the input of level displacement circuit；The colelctor electrode of NPN audion NPN1 connects power supply, plays base stage and is followed by power supply by the first resistance R1, and its emitter stage is by ground connection after the first electric capacity C1；The junction point of the base stage of NPN audion NPN1 and the first resistance R1 connects the negative electrode of the first Zener diode D1, the plus earth of the first Zener diode D1；The emitter stage of NPN audion NPN1 and the junction point of the first electric capacity C1 connect the power input of Schmidt trigger；The negative input end ground connection of Schmidt trigger, the grid of its output termination NMOS tube MN1；The source electrode of PMOS MP1 connects power supply, and its grid is followed by power supply by the second resistance R2；The junction point of PMOS MP1 grid and the second resistance R2 is followed by the outfan of Schmidt trigger by the second electric capacity C2；The drain electrode of PMOS MP1 connects the positive pole of the second Zener diode D2；The source electrode of power tube PMOS PMP1 connects power supply, and its grid connects the junction point of PMOS MP1 drain electrode and the second Zener diode D2 positive pole；The junction point of power tube PMOS PMP1 grid, PMOS MP1 drain electrode and the second Zener diode D2 positive pole is followed by the drain electrode of NMOS tube MN1 by the 3rd electric capacity C3；The source ground of NMOS tube MN1；The outfan of the input termination Schmidt trigger of phase inverter, the grid of the output termination power NMOS tube PMN1 of phase inverter；The source ground of power NMOS tube PMN1, its drain electrode connects the drain electrode of power tube PMOS PMP1；NMOS tube PMN1 source electrode and the power tube PMOS PMP1 outfan that junction point is level displacement circuit drained.
Beneficial effects of the present invention is; compare original level displacement circuit structure; the level displacement circuit of the present invention uses electric capacity to do load; the second electric capacity, the 3rd electric capacity is utilized to protect the grid of the first PMOS, the first power tube PMOS; make grid voltage domain of walker within 5V; thin grid oxygen metal-oxide-semiconductor can be applied in this circuit, thus improving circuit performance.
Accompanying drawing explanation
Fig. 1 is existing a kind of classical level displacement circuit figure；
Fig. 2 is the theory diagram of embodiment；
Fig. 3 is the electrical block diagram of embodiment；
Fig. 4 is the simulation result logical schematic of embodiment；
Fig. 5 is the simulation result schematic diagram of embodiment.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in detail
Embodiment
nullAs shown in Figure 3，The level displacement circuit being applicable to thin grid oxygen metal-oxide-semiconductor of the present embodiment，Including two resistance，Two Zener diodes，One Schmidt trigger，Three electric capacity，One phase inverter，One NMOS tube，One PMOS，One thin grid oxygen power NMOS tube，One thin grid oxygen power tube PMOS，The pressure voltage of the first Zener diode is 5.7V，First Zener diode D1 provides forward bias for a NPN pipe NPN1，A NPN pipe NPN1 is made to be in opening，First resistance R1 provides the bias between a NPN pipe NPN1 base stage and colelctor electrode，First electric capacity C1 is for providing the partial pressure value of 5V to do supply voltage to Schmidt trigger，Schmidt trigger is for the shaping to input signal，Input signal is TTL signal or the CMOS level signal of 3.3V or 5V，The negative electrode of Schmidt trigger output termination the second electric capacity C2，The anode of the second electric capacity C2 connects the negative electrode of the second resistance R2，The anode of the second electric capacity C2 connects the grid of the first PMOS MP1，The anode of the second resistance meets power supply VCC，The source electrode of the first PMOS MP1 meets power supply VCC，The drain electrode of the first PMOS MP1 connects the anode of the second Zener diode D2，The drain electrode of the first PMOS MP1 connects the anode of the 3rd electric capacity C3，The drain of the first PMOS MP1 connects the grid of the first thin grid oxygen PMOS PMP1，The negative electrode of the second Zener diode D2 meets power supply VCC，The source electrode of the first thin grid oxygen PMOS PMP1 meets power supply VCC，The output stage of Schmidt trigger connects the grid of the first NMOS tube MN1，The output stage of Schmidt trigger connects the input stage of the first phase inverter INV1，The drain electrode of the first NMOS tube MN1 connects the negative electrode of the 3rd electric capacity C3，The source ground of the first NMOS tube MN1，The output stage of the first phase inverter INV1 connects the grid of the first thin grid oxygen NMOS tube PMN1，The source ground of the first thin grid oxygen NMOS tube PMN1，The drain electrode of the first thin grid oxygen NMOS tube PMN1 connects the drain electrode of the first thin grid oxygen PMOS PMP1，The drain electrode of the first thin grid oxygen PMOS PMP1 is outfan with the drain electrode of the first thin grid oxygen NMOS tube PMN1.
The operation principle of integrated circuit of the present invention is described for the present embodiment:
In the present embodiment, the power supply VCC of circuit is 15V, the power supply of Schmidt trigger is 5V, Zener diode is pressure 5.7V, and the first electric capacity C1 is 1pF, second electric capacity C2 is 1pF, 3rd electric capacity C3 is 3pF, and the output stage of this circuit have employed thin grid oxygen metal-oxide-semiconductor, and the function of level displacement circuit is that the output of high side circuitry low-pressure section is sent to high-pressure section, in this circuit, load capacitance is to the key component that the control part of thin grid oxygen metal-oxide-semiconductor is drive circuit.
nullWhen exporting signal and being high level，The output signal of Schmidt trigger is high level，Now the grid of the first PMOS MP1 is high level，First PMOS MP1 closes，3rd electric capacity C3 will not be carried out discharge and recharge，The grid of the first NMOS tube MN1 is high level，First NMOS tube MN1 conducting，3rd electric capacity C3 minus earth level，3rd electric capacity C3 both end voltage is constant，3rd electric capacity C3 anode level is pulled low 5V，The difference of the 3rd electric capacity C3 anode level and power supply VCC is 5V，First thin grid oxygen PMOS PMP1 conducting，The input stage of the first phase inverter INV1 connects high level，It is output as low level，The grid of the first thin grid oxygen PMOS PMN1 is low level，First thin grid oxygen metal-oxide-semiconductor PMN1 turns off，Output signal OUT is low level；When inputting signal by high step-down, Schmidt trigger output low level, second electric capacity C2 negative electrode level is 0V, second electric capacity C2 anode level is pulled low, 3rd electric capacity C3 is also charged by the first PMOS MP1 conducting, the grid of the first NMOS tube MN1 is low level, first NMOS tube MN1 turns off, 3rd capacitor anode level high jump is also equal to power supply voltage VCC, first thin grid oxygen PMOS PMP1 turns off, first phase inverter INV1 input stage is low level, outfan is high level, the grid of the first thin grid oxygen NMOS tube PMN1 is high level, first thin grid oxygen NMOS tube PMN1 conducting, output signal OUT is low level, thus for successfully completing level signal conversion from low to high.
Fig. 4 gives the simulation result logic chart of this embodiment, and the saltus step with the input saltus step of signal of the current potential of the 3rd electric capacity C3 anode, the float level of the first thin grid oxygen PMOS grid is 10V-15V, within float level is in safe pressure voltage.
The simulated conditions of the present embodiment is: power supply VCC=15V；The first pressure 5.7V of Zener diode D1；Schmidt trigger supply voltage is 5V；Circuit input signal scope: 0V～5V (3.3V), output signal range: 0V-15V.Simulation result is as it is shown in figure 5, reached the purpose of lever-shifter.
In sum, a kind of level displacement circuit suitable in thin grid oxygen metal-oxide-semiconductor of the present invention can as the basic circuit semiconductor integrated circuit power electronic chip or driving chip, it is possible to achieve the raising to HVIC efficiency.
Claims (1)
1. for a level displacement circuit for thin grid oxygen metal-oxide-semiconductor, including the first electric capacity (C1), the second electric capacity (C2), the 3rd electric capacity (C3), the first Zener diode (D1), the second Zener diode (D2), the first resistance (R1), the second resistance (R2), NPN audion (NPN1), PMOS (MP1), power tube PMOS (PMP1), NMOS tube (MN1), phase inverter and Schmidt trigger；The input of described Schmidt trigger is the input of level displacement circuit；The colelctor electrode of NPN audion (NPN1) connects power supply, plays base stage and is followed by power supply by the first resistance (R1), and its emitter stage passes through the first electric capacity (C1) ground connection afterwards；The junction point of the base stage of NPN audion (NPN1) and the first resistance (R1) connects the negative electrode of the first Zener diode (D1), the plus earth of the first Zener diode (D1)；The emitter stage of NPN audion (NPN1) and the junction point of the first electric capacity (C1) connect the power input of Schmidt trigger；The negative input end ground connection of Schmidt trigger, the grid of its output termination NMOS tube (MN1)；The source electrode of PMOS (MP1) connects power supply, and its grid is followed by power supply by the second resistance (R2)；The junction point of PMOS (MP1) grid and the second resistance (R2) is followed by the outfan of Schmidt trigger by the second electric capacity (C2)；The drain electrode of PMOS (MP1) connects the positive pole of the second Zener diode (D2)；The source electrode of power tube PMOS (PMP1) connects power supply, and its grid connects the junction point of PMOS (MP1) drain electrode and the second Zener diode (D2) positive pole；The junction point of the drain electrode of power tube PMOS (PMP1) grid, PMOS (MP1) and the second Zener diode (D2) positive pole is followed by the drain electrode of NMOS tube (MN1) by the 3rd electric capacity (C3)；The source ground of NMOS tube (MN1)；The outfan of the input termination Schmidt trigger of phase inverter, the grid of output termination power NMOS tube (PMN1) of phase inverter；The source ground of power NMOS tube (PMN1), its drain electrode connects the drain electrode of power tube PMOS (PMP1)；The outfan that junction point is level displacement circuit that NMOS tube (PMN1) source electrode and power tube PMOS (PMP1) drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610120864.6A CN105811960B (en) | 2016-03-03 | 2016-03-03 | A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610120864.6A CN105811960B (en) | 2016-03-03 | 2016-03-03 | A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor |
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| CN105811960A true CN105811960A (en) | 2016-07-27 |
| CN105811960B CN105811960B (en) | 2018-01-09 |
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| CN201610120864.6A Expired - Fee Related CN105811960B (en) | 2016-03-03 | 2016-03-03 | A kind of level displacement circuit using thin grid oxygen metal-oxide-semiconductor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341119A (en) * | 2016-09-06 | 2017-01-18 | 珠海全志科技股份有限公司 | Level shifting circuit |
| CN110535459A (en) * | 2019-09-30 | 2019-12-03 | 安凯(广州)微电子技术有限公司 | A kind of digital level conversion circuit based on low voltage CMOS process |
| CN113014077A (en) * | 2021-03-30 | 2021-06-22 | 国硅集成电路技术(无锡)有限公司 | High-voltage PN bridge gate driving circuit |
| CN113541676A (en) * | 2021-08-10 | 2021-10-22 | 宜矽源半导体南京有限公司 | Low-power consumption high-voltage level shift circuit |
| CN114448215A (en) * | 2022-01-25 | 2022-05-06 | 深圳市诚芯微科技股份有限公司 | Power tube driving circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105522A (en) * | 1986-10-22 | 1988-05-10 | Nec Corp | High voltage digital signal output circuit |
| CN102769454A (en) * | 2012-06-30 | 2012-11-07 | 东南大学 | Noise interference-proof high-side gate drive circuit |
| CN102843123A (en) * | 2012-08-31 | 2012-12-26 | 电子科技大学 | High-voltage driving circuit |
-
2016
- 2016-03-03 CN CN201610120864.6A patent/CN105811960B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105522A (en) * | 1986-10-22 | 1988-05-10 | Nec Corp | High voltage digital signal output circuit |
| CN102769454A (en) * | 2012-06-30 | 2012-11-07 | 东南大学 | Noise interference-proof high-side gate drive circuit |
| CN102843123A (en) * | 2012-08-31 | 2012-12-26 | 电子科技大学 | High-voltage driving circuit |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341119A (en) * | 2016-09-06 | 2017-01-18 | 珠海全志科技股份有限公司 | Level shifting circuit |
| CN106341119B (en) * | 2016-09-06 | 2019-06-28 | 珠海全志科技股份有限公司 | Level shift circuit |
| CN110535459A (en) * | 2019-09-30 | 2019-12-03 | 安凯(广州)微电子技术有限公司 | A kind of digital level conversion circuit based on low voltage CMOS process |
| CN113014077A (en) * | 2021-03-30 | 2021-06-22 | 国硅集成电路技术(无锡)有限公司 | High-voltage PN bridge gate driving circuit |
| CN113014077B (en) * | 2021-03-30 | 2022-06-28 | 国硅集成电路技术(无锡)有限公司 | High-voltage PN bridge gate driving circuit |
| CN113541676A (en) * | 2021-08-10 | 2021-10-22 | 宜矽源半导体南京有限公司 | Low-power consumption high-voltage level shift circuit |
| CN114448215A (en) * | 2022-01-25 | 2022-05-06 | 深圳市诚芯微科技股份有限公司 | Power tube driving circuit |
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| CN105811960B (en) | 2018-01-09 |
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Granted publication date: 20180109 Termination date: 20210303 |