CN109167592A - Low-cost and high-performance switch tube driving circuit - Google Patents
Low-cost and high-performance switch tube driving circuit Download PDFInfo
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- CN109167592A CN109167592A CN201811142922.0A CN201811142922A CN109167592A CN 109167592 A CN109167592 A CN 109167592A CN 201811142922 A CN201811142922 A CN 201811142922A CN 109167592 A CN109167592 A CN 109167592A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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Abstract
The invention discloses a kind of low-cost and high-performance switch tube driving circuits, it is recommended including common base and pipe and common gate pole is recommended to pipe, the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source, for exporting the first driving signal under the action of the signal source；Recommend the output end electric connection recommended to the common gate pole of pipe and the common base to pipe in the common gate pole, common gate pole, which is recommended, connect the output end of pipe with by the controlled end of driving transistor, for exporting the second driving signal under the action of first driving signal, to the driving for being carried out on or off by driving transistor.Low-cost and high-performance switch tube driving circuit of the invention, voltage is big close to ground voltage, push-and-pull electric current when having the characteristics that when at low cost, high level output voltage close to supply voltage, low level output, and the crossover current of driving circuit is few, so that the power consumption of switch tube driving circuit is smaller, high reliablity.
Description
Technical field
The present invention relates to power technique fields more particularly to a kind of low-cost and high-performance switch tube driving circuits.
Background technique
The conversion of energy is realized in power electronic technique using the open and close of switching tube.The switch of switching tube both influenced
The fever of switching tube, and be the source of electromagnetic radiation, and everything driving for passing through switching tube is realized.Therefore the drive of switching tube
Dynamic is both the difficult point and emphasis of power electronic technique.
In the prior art, the pushing away of switch tube driving circuit, sourcing current are smaller, are not available and drive in high-power switch tube,
Voltage can not be close to driving power voltage, close to ground level when low level output when high level output.And switch tube driving circuit
Power consumption is larger.And the high performance device of high power switch tube drive circuit selects higher cost.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention
One purpose is to propose a kind of low-cost and high-performance switch tube driving circuit.
To achieve the above object, low-cost and high-performance switch tube driving circuit according to an embodiment of the present invention, including cobasis
Pole is recommended to pipe, and the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source, for described
The first driving signal is exported under the action of signal source；
Common gate pole is recommended to pipe, and the output end recommended to the common gate pole of pipe and the common base to pipe is recommended in the common gate pole
It is electrically connected, common gate pole, which is recommended, connect the output end of pipe with by the controlled end of driving transistor, in first driving
The second driving signal is exported under the action of signal, to the driving for being carried out on or off by driving transistor.
Further, according to one embodiment of present invention, the common base is recommended includes: to pipe
First triode Q2, the collector of the first triode Q2 are connect with the first supply voltage；
Second triode Q3, the emitter of the second triode Q3 are connect with the emitter of the first triode Q2,
The collector of the second triode Q3 is connect with reference, the base stage of the second triode Q3 and the first triode Q2
Base stage connection, the base stage of the first triode Q2 base stage and the second triode Q3 connects with the signal source output terminal respectively
It connects, the emitter of the first triode Q2 and the second triode Q3 are recommended with the common gate pole and connect to the gate pole of pipe.
Further, according to one embodiment of present invention, the first triode Q2 is NPN type triode, described the
Two triode Q3 are PNP type triode.
Further, according to one embodiment of present invention, the common gate pole is recommended includes: to pipe
First MOS transistor Q4, the source electrode of the first MOS transistor Q4 are connect with first supply voltage；
The drain electrode of second MOS transistor Q5, the second transistor are connect with the drain electrode of the first MOS transistor Q4,
The second MOS transistor Q5 road source electrode is connect with the reference, the gate pole and described first of the second MOS transistor Q5
The gate pole of MOS transistor Q4 connects, the gate pole of the gate pole of the first MOS transistor Q4 and the second MOS transistor Q5 respectively with
The common base is recommended to the connection of first driving signal output end of pipe, the drain electrode of the first MOS transistor Q4 and the
The drain electrode of two MOS transistor Q5 is connect with the controlled end by driving transistor respectively.
Further, according to one embodiment of present invention, the first MOS transistor Q4 is p channel transistor, described
Second MOS transistor Q5 is N-channel transistor.
Further, according to one embodiment of present invention, further includes:
First resistor R4, one end of the first resistor R4 are connect with the drain electrode of the first MOS transistor Q4, and described
The other end of one resistance R4 is connect with the controlled end by driving transistor；
Second resistance R5, one end of the second resistance R5 are connect with the drain electrode of the second MOS transistor Q5, and described
The other end of two resistance R5 is connect with the controlled end by driving transistor；
The first resistor R4 and second resistance R5 recommends the adjusting of the output Current Voltage to pipe for the common base.
It further, according to one embodiment of present invention, further include 3rd resistor R6, one end of the 3rd resistor R6
It is connect with the controlled end by driving transistor, the other end of the 3rd resistor R6 is connect with reference；The third electricity
R6 is hindered to be used to carry out initial reset to the controlled end by driving transistor.
It further, according to one embodiment of present invention, further include third MOS transistor Q1, the 3rd MOS crystal
The gate pole of pipe Q1 is connect with the signal output end of the signal source, and the source electrode of the third MOS transistor Q1 is connect with reference,
The drain electrode of the third MOS transistor Q1 is recommended with the common base connect the common base of pipe, the third MOS transistor Q1
Drain electrode also pass through the 4th resistance R3 and connect with first supply voltage；
The third MOS transistor Q1 is N-channel MOS transistor.
Further, according to one embodiment of present invention, further includes:
5th resistance R7, one end of the 5th resistance R7 respectively with the drain electrode of the first MOS transistor Q4, second brilliant
The drain electrode of body pipe connects, and the other end of the 5th resistance R7 is connect with the controlled end by driving transistor；
6th resistance R8, one end of the 6th resistance R8 respectively with the drain electrode of the first MOS transistor Q4, second brilliant
The drain electrode of body pipe connects；
First diode D1, the cathode of the first diode D1 is connect with the other end of the 6th resistance R8, described
The anode of first diode D1 is connect with the controlled end by driving transistor.
Low-cost and high-performance switch tube driving circuit provided in an embodiment of the present invention, recommend by using common base to pipe and
Common gate pole is recommended to pipe as driving output, and voltage is close to supply voltage, low level output when having at low cost, high level output
When voltage close to ground voltage, the big feature of push-and-pull electric current, wherein common base recommends the intersection electricity recommended to pipe and common gate pole to pipe
Stream is few, so that the power consumption of switch tube driving circuit is smaller, high reliablity.And by adjusting first resistor R4 and second resistance
The resistance value of R5 can realize the driving to nearly all switching tube with lower cost.
Detailed description of the invention
Fig. 1 is low-cost and high-performance switch tube driving circuit structural schematic diagram provided by the invention；
Fig. 2 is another low-cost and high-performance switch tube driving circuit structural schematic diagram provided by the invention.
Appended drawing reference:
Signal source 10；
Cost high performance switch tube drive circuit 20；
By driving transistor 30.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described.Unless otherwise defined, used herein
All technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.Herein
Used term, which is only for the purpose of describing specific embodiments, in the description of the invention is not intended to limit this
Invention.
Referenced herein " embodiment " is it is meant that a particular feature, structure, or characteristic described can wrap in conjunction with the embodiments
Containing at least one embodiment of the present invention.Each position in the description occur the phrase might not each mean it is identical
Embodiment, nor the independent or alternative embodiment with other embodiments mutual exclusion.Those skilled in the art explicitly and
Implicitly understand, embodiment described herein can be combined with other embodiments.
Refering to fig. 1, the present invention provides a kind of low-cost and high-performance switch tube driving circuit, comprising: common base is recommended to pipe
It recommends with common gate pole to pipe, the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source, is used for
The first driving signal is exported under the action of the signal source；The signal source is used to export low and high level driving control signal,
The low and high level driving control signal, which is exported to the common base, recommends to pipe, and the common base is that two triodes are total to pipe
Base stage connection constitutes common base push-pull circuit and is led under the driving of the low and high level of signal source by the complementation of two triodes
It is logical, the low and high level signal that signal source exports is converted into the output of push-pull type low and high level signal.
The common gate pole is recommended to recommend the common gate pole of pipe and the common base and is electrically connected to the output end of pipe, common gate pole
It recommends and the output end of pipe is connect with by the controlled end of driving transistor, for being exported under the action of first driving signal
Second driving signal, to the driving for being carried out on or off by driving transistor.
Recommend first driving signal to pipe output push-pull type low and high level, the first driving letter in the common gate pole
It number acts on the common gate pole and recommends input terminal to pipe, the common gate pole, which is recommended, connects the common gate pole that pipe is two MOS transistors
It connects.Common gate pole push-pull circuit is constituted, under the low and high level driving of the first driving signal, is led by the complementation of two MOS transistors
It is logical, the low and high level signal of the first driving signal is converted into the output of push-pull type low and high level signal.To by driving transistor
Carry out the driving of on or off.
In the embodiment of the present invention, is exported by the driving that common gate pole is recommended to pipe as driving circuit, can be guaranteed in this way
When output is high level, upper MOS transistor is in depth saturation state, at this time the source of upper MOS transistor, drain electrode pressure drop pole
It is low, close to 0V, that is to say, that when exporting high level close to the first supply voltage VCC.When driving exports low level, lower MOS
Transistor turns, MOS transistor is in depth saturation state at present for this, and source, drain electrode pressure drop are extremely low, close to 0V, i.e., in low electricity
Usually, it exports close to 0V.
In addition, the embodiment of the present invention is recommended by the common gate pole recommending that the input terminal of pipe is added with the common gate pole
The common base of pipe reverse logic is recommended to pipe.Addition to pipe is recommended due to common base and greatly accelerates upper MOS transistor
It with the opening of lower MOS transistor, turn-off speed, while increasing common gate pole and recommending to the pushing away of pipe, sourcing current peak value, also obvious drop
Low cross-conduction electric current.Since common base recommends the circuit topology to pipe, it itself is not likely to produce cross-conduction electric current.
And the input terminal addition common base of pipe is recommended to pipe by being recommended in common gate pole, so that circuit output is pushed away, is drawn
Peak point current is big, reduces the opening of driven switch, turn-off power loss, and common gate pole recommends and intersects straight-through electricity to existing in pipe
Stream is smaller, generates heat small, makes the high reliablity of circuit.
Refering to fig. 1, it includes: the first triode Q2 and the second triode Q3 that the common base, which is recommended to pipe, and the described 1st
The collector of pole pipe Q2 is connect with the first supply voltage VCC；The emitter and first triode of the second triode Q3
The emitter of Q2 connects, and the collector of the second triode Q3 is connect with reference to ground GND, the base stage of the second triode Q3
Connect with the base stage of the first triode Q2, the base stage of the first triode Q2 base stage and the second triode Q3 respectively with institute
The connection of signal source output terminal is stated, the emitter and the common gate pole of the first triode Q2 and the second triode Q3 are recommended to pipe
Gate pole connection.
The first triode Q2, the second triode Q3 are mutually complementary triode, the first triode Q2 and second
Triode Q3 complementary conducting under the driving signal of the signal source, due to the collector of the first triode Q2 and described the
One supply voltage VCC connection, when the first triode Q2 is connected, and the second triode Q3 ends, the first triode Q2
Emitter output level is the high level of the first supply voltage VCC.Due to the collector and ginseng of the second triode Q3
Ground GND connection is examined, when the first triode Q2 ends, and the second triode Q3 is connected, the second triode Q3 emitter
Low level is exported, the low and high level signal that signal source exports is converted into the output of push-pull type low and high level signal.
In one embodiment of the invention, the first triode Q2 is NPN type triode, the second triode Q3
For PNP type triode.
Refering to fig. 1, it includes: the first MOS transistor Q4 and the second MOS transistor Q5 that the common gate pole, which is recommended to pipe, described
The source electrode of first MOS transistor Q4 is connect with the first supply voltage VCC；The drain electrode of the second transistor and described first
The drain electrode of MOS transistor Q4 connects, and the second MOS transistor Q5 road source electrode is connect with described with reference to ground GND, and described second
The gate pole of MOS transistor Q5 is connect with the gate pole of the first MOS transistor Q4, the gate pole of the first MOS transistor Q4 and
The gate pole of second MOS transistor Q5 is recommended with the common base respectively connect first driving signal output end of pipe, institute
State the first MOS transistor Q4 drain electrode and the second MOS transistor Q5 drain respectively with the controlled end by driving transistor
Connection.
The first MOS transistor Q4, the second MOS transistor Q5 are mutual complementary transistor, first MOS transistor
Q4 and the second MOS transistor Q5 complementary conducting under first driving signal, due to the first MOS transistor Q4's
Source electrode is connect with the first supply voltage VCC, and when the first MOS transistor Q4 is connected, the second MOS transistor Q5 ends
When, high level that the first MOS transistor Q4 drain electrode output level is the first supply voltage VCC.Due to described second
The source electrode of MOS transistor Q5 is connect with reference to ground GND, and when the first MOS transistor Q4 ends, the second MOS transistor Q5 is led
When logical, the first MOS transistor Q4 drain electrode output low level.
In one embodiment of the invention, the first MOS transistor Q4 is p channel transistor, and the 2nd MOS is brilliant
Body pipe Q5 is N-channel transistor.
Refering to fig. 1, further includes: first resistor R4 and second resistance R5, one end of the first resistor R4 and described first
The drain electrode of MOS transistor Q4 connects, and the other end of the first resistor R4 is connect with the controlled end by driving transistor；Institute
The one end for stating second resistance R5 is connect with the drain electrode of the second MOS transistor Q5, the other end of the second resistance R5 and institute
It states by the controlled end connection of driving transistor；The first resistor R4 and second resistance R5 is recommended for the common base to pipe
Current Voltage is exported to adjust.By first resistor R4 be connected on the first MOS transistor Q4 and it is described by driving transistor it
Between, when the first MOS transistor Q4 conducting, by first resistor R4 limitation to by the charging electricity of driving transistor
Stream and conducting voltage are applicable to drive the different conductings by driving transistor.It is limited by the second resistance R5
System is to by the discharge current of driving transistor, being applicable to the different deadlines by driving transistor.
It refering to fig. 1, further include 3rd resistor R6, one end of the 3rd resistor R6 is with described by the controlled of driving transistor
End connection, the other end of the 3rd resistor R6 are connect with reference to ground GND；The 3rd resistor R6 is used for brilliant by driving to described
The controlled end of body pipe carries out initial reset.The 3rd resistor R6 is pull down resistor, passes through the 3rd resistor R6 and reference
Ground GND connection, when the common gate pole, which is recommended, does not have drive output signal to pipe, the 3rd resistor R6 will be described brilliant by driving
The electricity of the controlled end of body pipe discharges, make it is described by driving transistor controlled end low level, it is described to be in by driving transistor
The original state of cut-off.
It refering to fig. 1, further include third MOS transistor Q1, gate pole and the signal source of the third MOS transistor Q1
Signal output end connection, the source electrode of the third MOS transistor Q1 are connect with reference to ground GND, the third MOS transistor Q1's
Drain electrode is recommended with the common base connect the common base of pipe, and the drain electrode of the third MOS transistor Q1 also passes through the 4th resistance
R3 is connect with the first supply voltage VCC.
The third MOS transistor Q1 is N-channel MOS transistor.When the signal source exports high level, the third
It is connected between the source electrode and drain electrode of MOS transistor Q1, mutual conduction between the drain electrode and source electrode of the third MOS transistor Q1,
The third MOS transistor Q1 exports low level, and when the signal source exports low level, the third MOS transistor Q1 is defeated
High level out carries out the output signal of the signal source reversed by the third MOS transistor Q1.So that the common gate
Pole, which is recommended, exports driving signal identical with the signal source phase to pipe.
Referring to Fig.2, further include: the 5th resistance R7, the 6th resistance R8 and first diode D1, the one of the 5th resistance R7
End is connect with the drain electrode of the drain electrode of the first MOS transistor Q4, second transistor respectively, the other end of the 5th resistance R7
It is connect with the controlled end by driving transistor；One end of the 6th resistance R8 respectively with the first MOS transistor Q4
Drain electrode, the second MOS transistor Q5 drain electrode connection；The cathode of the first diode D1 is another with the 6th resistance R8's
End connection, the anode of the first diode D1 are connect with the controlled end by driving transistor.Pass through the 5th resistance
R7, the 6th resistance R8 and first diode D1 carry out charge-discharge circuit limitation by driving transistor to described, to be adapted to difference
It is described by the charging and discharging currents of driving transistor and from discharge time.
Low-cost and high-performance switch tube driving circuit provided in an embodiment of the present invention, recommend by using common base to pipe and
Common gate pole is recommended to pipe as driving output, and voltage is close to supply voltage, low level output when having at low cost, high level output
When voltage close to ground voltage, the big feature of push-and-pull electric current, wherein common base recommends the intersection electricity recommended to pipe and common gate pole to pipe
Stream is few, so that the power consumption of switch tube driving circuit is smaller.And by adjusting the resistance of first resistor R4 and second resistance R5
Value, cost that can be extremely low realize the driving to nearly all switching tube.
The above is only the embodiment of the present invention, are not intended to limit the scope of the patents of the invention, although with reference to the foregoing embodiments
Invention is explained in detail, still can be to aforementioned each specific reality for coming for those skilled in the art
It applies technical solution documented by mode to modify, or equivalence replacement is carried out to part of technical characteristic.It is all to utilize this
The equivalent structure that description of the invention and accompanying drawing content are done directly or indirectly is used in other related technical areas, similarly
Within the invention patent protection scope.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
Centainly refer to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any
One or more embodiment or examples in can be combined in any suitable manner.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art are not departing from the principle of the present invention and objective
In the case where can make changes, modifications, alterations, and variations to the above described embodiments within the scope of the invention.
Claims (9)
1. a kind of low-cost and high-performance switch tube driving circuit characterized by comprising
Common base is recommended to pipe, and the common base, which is recommended, is electrically connected the common base of pipe and the signal output end of signal source, is used
In exporting the first driving signal under the action of the signal source；
Common gate pole is recommended to pipe, and the output end electrical property recommended to the common gate pole of pipe and the common base to pipe is recommended in the common gate pole
Connection, common gate pole, which is recommended, connect the output end of pipe with by the controlled end of driving transistor, in first driving signal
Under the action of export the second driving signal, to it is described by driving transistor carry out on or off driving.
2. low-cost and high-performance switch tube driving circuit according to claim 1, which is characterized in that the common base is recommended
Include: to pipe
First triode Q2, the collector of the first triode Q2 are connect with the first supply voltage；
Second triode Q3, the emitter of the second triode Q3 is connect with the emitter of the first triode Q2, described
The collector of second triode Q3 is connect with reference, the base of the base stage of the second triode Q3 and the first triode Q2
The base stage of pole connection, the first triode Q2 base stage and the second triode Q3 are connect with the signal source output terminal respectively, institute
Stating the emitter of the first triode Q2 and the second triode Q3, gate pole recommends gate pole connection to pipe together.
3. low-cost and high-performance switch tube driving circuit according to claim 2, which is characterized in that first triode
Q2 is NPN type triode, and the second triode Q3 is PNP type triode.
4. low-cost and high-performance switch tube driving circuit according to claim 3, which is characterized in that recommend the common gate pole
Include: to pipe
First MOS transistor Q4, the source electrode of the first MOS transistor Q4 are connect with first supply voltage；
The drain electrode of second MOS transistor Q5, the second transistor are connect with the drain electrode of the first MOS transistor Q4, described
Second MOS transistor Q5 road source electrode is connect with the reference, the gate pole and the first MOS of the second MOS transistor Q5
The gate pole of transistor Q4 connects, the gate pole of the gate pole of the first MOS transistor Q4 and the second MOS transistor Q5 respectively with it is described
Common base recommends first driving signal output end connection to pipe, the drain electrode of the first MOS transistor Q4 and the 2nd MOS
The drain electrode of transistor Q5 is connect with the controlled end by driving transistor respectively.
5. low-cost and high-performance switch tube driving circuit according to claim 4, which is characterized in that the first MOS is brilliant
Body pipe Q4 is p channel transistor, and the second MOS transistor Q5 is N-channel transistor.
6. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include:
First resistor R4, one end of the first resistor R4 are connect with the drain electrode of the first MOS transistor Q4, first electricity
The other end of resistance R4 is connect with the controlled end by driving transistor；
Second resistance R5, one end of the second resistance R5 are connect with the drain electrode of the second MOS transistor Q5, second electricity
The other end of resistance R5 is connect with the controlled end by driving transistor；
The first resistor R4 and second resistance R5 recommends the adjusting of the output Current Voltage to pipe for the common gate pole.
7. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include 3rd resistor
R6, one end of the 3rd resistor R6 are connect with the controlled end by driving transistor, the other end of the 3rd resistor R6
With reference it connect；The 3rd resistor R6 is used to carry out initial reset to the controlled end by driving transistor.
8. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include the 3rd MOS
Transistor Q1, the gate pole of the third MOS transistor Q1 are connect with the signal output end of the signal source, and the 3rd MOS is brilliant
The source electrode of body pipe Q1 is connect with reference, and drain electrode and the common base of the third MOS transistor Q1 recommends the cobasis to pipe
Pole connection, the drain electrode of the third MOS transistor Q1 also pass through the 4th resistance R3 and connect with first supply voltage；
The third MOS transistor Q1 is N-channel MOS transistor.
9. low-cost and high-performance switch tube driving circuit according to claim 5, which is characterized in that further include:
5th resistance R7, one end of the 5th resistance R7 respectively with the drain electrode of the first MOS transistor Q4, second transistor
Drain electrode connection, the other end of the 5th resistance R7 connect with the controlled end by driving transistor；
6th resistance R8, one end of the 6th resistance R8 respectively with the drain electrode of the first MOS transistor Q4, second transistor
Drain electrode connection；
First diode D1, the cathode of the first diode D1 are connect with the other end of the 6th resistance R8, and described first
The anode of diode D1 is connect with the controlled end by driving transistor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811142922.0A CN109167592A (en) | 2018-09-28 | 2018-09-28 | Low-cost and high-performance switch tube driving circuit |
| PCT/CN2019/092343 WO2020062962A1 (en) | 2018-09-28 | 2019-06-21 | Low-cost and high-performance switch tube driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811142922.0A CN109167592A (en) | 2018-09-28 | 2018-09-28 | Low-cost and high-performance switch tube driving circuit |
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| CN109167592A true CN109167592A (en) | 2019-01-08 |
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| CN201811142922.0A Pending CN109167592A (en) | 2018-09-28 | 2018-09-28 | Low-cost and high-performance switch tube driving circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020062962A1 (en) * | 2018-09-28 | 2020-04-02 | 广东百事泰电子商务股份有限公司 | Low-cost and high-performance switch tube driving circuit |
| CN113381741A (en) * | 2021-06-17 | 2021-09-10 | 烟台环球机床装备股份有限公司 | Variable-level differential single-ended switchable pulse output circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178694A (en) * | 2013-03-01 | 2013-06-26 | 南京埃斯顿自动控制技术有限公司 | Insulated gate bipolar transistor gate driving push-pull circuit |
| CN204131481U (en) * | 2014-09-16 | 2015-01-28 | 广东易事特电源股份有限公司 | The low-loss high speed push-pull driver circuit of low cost |
| CN105958989A (en) * | 2016-05-03 | 2016-09-21 | 苏州泰思特电子科技有限公司 | High-voltage nanosecond-level rising edge MOSFET electronic switch |
| CN209134378U (en) * | 2018-09-28 | 2019-07-19 | 广东百事泰电子商务股份有限公司 | Low-cost and high-performance switch tube driving circuit |
-
2018
- 2018-09-28 CN CN201811142922.0A patent/CN109167592A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178694A (en) * | 2013-03-01 | 2013-06-26 | 南京埃斯顿自动控制技术有限公司 | Insulated gate bipolar transistor gate driving push-pull circuit |
| CN204131481U (en) * | 2014-09-16 | 2015-01-28 | 广东易事特电源股份有限公司 | The low-loss high speed push-pull driver circuit of low cost |
| CN105958989A (en) * | 2016-05-03 | 2016-09-21 | 苏州泰思特电子科技有限公司 | High-voltage nanosecond-level rising edge MOSFET electronic switch |
| CN209134378U (en) * | 2018-09-28 | 2019-07-19 | 广东百事泰电子商务股份有限公司 | Low-cost and high-performance switch tube driving circuit |
Non-Patent Citations (1)
| Title |
|---|
| 陈捷恺: "6kW DC/DC变换器热分析及散热结构优化", 《中国优秀硕士学位论文全文数据库（工程科技II辑）》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020062962A1 (en) * | 2018-09-28 | 2020-04-02 | 广东百事泰电子商务股份有限公司 | Low-cost and high-performance switch tube driving circuit |
| CN113381741A (en) * | 2021-06-17 | 2021-09-10 | 烟台环球机床装备股份有限公司 | Variable-level differential single-ended switchable pulse output circuit |
| CN113381741B (en) * | 2021-06-17 | 2022-03-04 | 烟台环球机床装备股份有限公司 | Variable-level differential single-ended switchable pulse output circuit |
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