CN103001620A - Gate-modified IGBT (insulated gate bipolar transistor) driving circuit - Google Patents
Gate-modified IGBT (insulated gate bipolar transistor) driving circuit Download PDFInfo
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- CN103001620A CN103001620A CN 201210456462 CN201210456462A CN103001620A CN 103001620 A CN103001620 A CN 103001620A CN 201210456462 CN201210456462 CN 201210456462 CN 201210456462 A CN201210456462 A CN 201210456462A CN 103001620 A CN103001620 A CN 103001620A
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Abstract
The invention discloses a gate-modified IGBT (insulated gate bipolar transistor) driving circuit, and relates to an IGTB driving circuit which is powered by a single power source and has a short-circuit protection function. The gate-modified IGBT driving circuit comprises an electric isolation and turn-on circuit, a two-stage amplifying circuit, an emitter follower, a short-circuit signal detection circuit, an IGBT short-circuit protection circuit and a gate resistance modification circuit. The gate-modified IGBT driving circuit is scientific and reasonable in design, input and output signals are electrically isolated by a high-speed optical coupler U1, the potential of the driving circuit can be strictly isolated from the potential of a control circuit, and the gate-modified IGBT driving circuit is applicable to high-frequency application places. Besides, a collector desaturation principle is implemented by the short-circuit protection circuit, driving voltage GEV of an IGBT is reduced, and the IGBT is turned off before being damaged, and accordingly is protected. In addition, the requirement on different turn-on and turn-off moments in the same circuit is met by the gate resistance modification circuit.
Description
Technical field
The IGBT drive circuit of the short-circuit protection of the drive circuit that relates to, particularly a kind of single power supply of the present invention.
Background technology
Insulation gate pole bipolar transistor (Isolated Gate Bipolar Transistor is called for short IGBT) is to be compounded with the advantage of power field effect pipe and power transistor and a kind of NEW TYPE OF COMPOSITE device of producing, have that input impedance height, operating rate are fast, the Heat stability is good drive circuit is simple, on state voltage is low, withstand voltage height and bear the advantages such as electric current is large, therefore use now increasingly extensive.But the performance of IGBT superperformance is unreasonable because of in the design of its gate driver circuit often, restricting popularization and the application of IGBT.Well behaved drive circuit can make power electronic device be operated in comparatively ideal on off state, shortens switching time, reduces switching loss, and operational efficiency, reliability, the fail safe of installing had important meaning.But in switching power unit, because it is operated under the condition of high pressure, large electric current, so that IGBT damages easily and a general IGBT drive circuit resistance commonly used can't satisfy different service time and the turn-off time demands that require in the same circuit.
Summary of the invention
The present invention be directed to the problems referred to above, aim to provide reliable and stable the having short-circuit protection function and can regulate the IGBT drive circuit that difference turns on and off of a kind of modified model.
Implementation of the present invention is: electrical isolation is opened circuit, two-stage amplifying circuit, emitter follower, detection of short-circuit signal circuit, IGBT short-circuit protection circuit and resistance improve the electric circuit constitute, and wherein electrical isolation is opened circuit and connected to form with resistance R 1, R2, R3, R4, R5 respectively by high speed photo coupling U1; The two-stage amplifying circuit is connected to form by triode T1 connection in series-parallel triode T2 triode T3, triode T4, triode T5; Emitter follower is composed in series by triode T1 and R7; The detection of short-circuit signal circuit is composed in series by D2, resistance R 6, resistance R 12 and T6; The IGBT short-circuit protection circuit is by between IGBT grid source and the bi-directional voltage stabilizing pipe D4 and the D5 that connect, and resistance R 13 and resistance R 11 form; Resistance improves circuit and connects to form with resistance R F2 after by resistance R G1 fast recovery diode D1 in parallel.
Useful technique effect of the present invention is: utilizes high speed photo coupling U1 to realize the electrical isolation of input/output signal among the present invention, drive circuit and control circuit will strictly be isolated on current potential, and suitable frequency applications occasion.And short-circuit protection circuit uses collector electrode to move back saturated principle among the present invention, when the generation collector current is excessive, reduces the driving voltage GEV of IGBT, before IGBT damages, with its shutoff, thereby has protected IGBT.Resistance improves circuit and is implemented in different service time and the turn-off times that require in the same circuit.
Description of drawings
Fig. 1 is the schematic diagram of the drive circuit of general IGBT.
Fig. 2 is one of resistance modified embodiment circuit diagram among the present invention.
Fig. 3 is one of resistance modified embodiment circuit diagram among the present invention.
Fig. 4 is one of resistance modified embodiment circuit diagram among the present invention.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
With reference to Fig. 1, the drive circuit of general IGBT is mainly opened circuit by electrical isolation, two-stage amplifying circuit, emitter follower, detection of short-circuit signal circuit, IGBT short-circuit protection circuit form, and wherein electrical isolation is opened circuit and connected to form with resistance R 1, R2, R3, R4, R5 respectively by high speed photo coupling U1; The two-stage amplifying circuit is connected to form by triode T1 connection in series-parallel triode T2 triode T3, triode T4, triode T5; Emitter follower is composed in series by triode T1 and R7; The detection of short-circuit signal circuit is composed in series by D2, resistance R 6, resistance R 12 and T6; The IGBT short-circuit protection circuit is by between IGBT grid source and the bi-directional voltage stabilizing pipe D4 and the D5 that connect, and the negative voltage bleeder circuit that resistance R 13 and resistance R 11, gate pole crosstalk resistance Rg connect and compose forms.
With reference to Fig. 2 and Fig. 3, on the drive circuit basis of general IGBT shown in Figure 1, the resistance that former single resistance Rg is made among the present invention improves circuit, resistance improves circuit and connects to form with resistance R F2 after by resistance R G1 fast recovery diode D1 in parallel, is implemented in different service time and the turn-off times that require in the same circuit.
With reference to Fig. 4, on the drive circuit basis of general IGBT shown in Figure 1, the resistance that former single resistance Rg is made among the present invention improves circuit, resistance improves circuit by resistance R G1 series resistance RG2, and resistance R G1 is in parallel with fast recovery diode D 1, resistance R G2 and fast recovery diode D2 compose in parallel, and are implemented in different service time and the turn-off times that require in the same circuit.
During normal operation:
When control circuit is sent high level signal here, high speed photo coupling U1 cut-off, T1, T3, T5 conducting, and T2 and T4 cut-off,
This moment, the G voltage of order was 0V, and because the dividing potential drop effect of R11 and R13, the voltage that E order is+9, thus between the grid source voltage of generation-9V, IGBT is turn-offed fast, wherein the C3 worry removes high-frequency signal.
When control circuit is sent low level signal here, high speed photo coupling U1 conducting, T1, T3, T5 cut-off, and T2 and T4 conducting, this moment, G voltage was+24V, the voltage that E is ordered is+9, thus between the grid source voltage of generation+15V, make IGBT open-minded fast.
During short trouble:
When the IGBT conducting, the T6 cut-off, the current potential that A is ordered depends on D2, R6, R12 and C
ESvDividing potential drop determine, when contrary
The load on power transformation road is short-circuited or during upper and lower bridge arm direct pass and when making collector current excessive, the IGBT collector electrode moves back saturated, A point potential rise, thereby T7 conducting are so that the potential rise D1 conducting that B is ordered, make the E point voltage high, because the voltage of capacitor C 3 can not suddenly change, so the E point voltage can continue rising according to index law, along with the rising of E point voltage, voltage between the grid source electrode is step-down even fully shutoff gradually, thereby has limited collector current.Avoided because the collector electrode overcurrent damages GIBT, after fault was got rid of, whole circuit can recover again normal operation automatically.
Claims (2)
1. grid modified model IGBT drive circuit, it is characterized in that comprising: electrical isolation is opened circuit, and two-stage amplifying circuit, emitter follower, detection of short-circuit signal circuit, IGBT short-circuit protection circuit and resistance improve the electric circuit constitute, wherein,
Described electrical isolation is opened circuit and is connected to form with resistance R 1, R2, R3, R4, R5 respectively by high speed photo coupling U1;
Described two-stage amplifying circuit is connected to form by triode T1 connection in series-parallel triode T2 triode T3, triode T4, triode T5;
Described emitter follower is composed in series by triode T1 and R7; The detection of short-circuit signal circuit is composed in series by D2, resistance R 6, resistance R 12 and T6;
Described IGBT short-circuit protection circuit is by between IGBT grid source and the bi-directional voltage stabilizing pipe D4 and the D5 that connect, and resistance R 13 and resistance R 11 form;
Described resistance improves circuit and connects to form with resistance R F2 after by resistance R G1 fast recovery diode D1 in parallel.
2. grid modified model IGBT drive circuit according to claim 1, it is characterized in that described resistance improvement circuit can be by resistance R G1 series resistance RG2, and resistance R G1 is in parallel with fast recovery diode D 1, and resistance R G2 and fast recovery diode D2 compose in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210456462 CN103001620A (en) | 2012-11-14 | 2012-11-14 | Gate-modified IGBT (insulated gate bipolar transistor) driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210456462 CN103001620A (en) | 2012-11-14 | 2012-11-14 | Gate-modified IGBT (insulated gate bipolar transistor) driving circuit |
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| Publication Number | Publication Date |
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| CN103001620A true CN103001620A (en) | 2013-03-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201210456462 Withdrawn CN103001620A (en) | 2012-11-14 | 2012-11-14 | Gate-modified IGBT (insulated gate bipolar transistor) driving circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347713A (en) * | 2013-07-25 | 2015-02-11 | 英飞凌科技股份有限公司 | Power MOS Transistor with Integrated Gate-Resistor |
| CN105474544A (en) * | 2013-10-03 | 2016-04-06 | 三菱重工汽车空调系统株式会社 | Load driving device, vehicle air-conditioning apparatus, and load short-circuit protection circuit |
| CN106026626A (en) * | 2016-06-29 | 2016-10-12 | 浪潮集团有限公司 | Surge current suppressor based on RC time delay circuit |
| CN106206701A (en) * | 2015-05-29 | 2016-12-07 | 英飞凌科技股份有限公司 | Control the IGBT of reversely conduction |
-
2012
- 2012-11-14 CN CN 201210456462 patent/CN103001620A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347713A (en) * | 2013-07-25 | 2015-02-11 | 英飞凌科技股份有限公司 | Power MOS Transistor with Integrated Gate-Resistor |
| US9548370B2 (en) | 2013-07-25 | 2017-01-17 | Infineon Technologies Ag | Transistor device with integrated gate-resistor |
| CN104347713B (en) * | 2013-07-25 | 2017-07-14 | 英飞凌科技股份有限公司 | Power MOS transistor with integrated grid resistor |
| DE102014110366B4 (en) * | 2013-07-25 | 2020-08-20 | Infineon Technologies Ag | MOS POWER TRANSISTOR WITH INTEGRATED GATE RESISTOR |
| CN105474544A (en) * | 2013-10-03 | 2016-04-06 | 三菱重工汽车空调系统株式会社 | Load driving device, vehicle air-conditioning apparatus, and load short-circuit protection circuit |
| CN105474544B (en) * | 2013-10-03 | 2018-09-28 | 三菱重工制冷空调系统株式会社 | Load drive device, air conditioner for motor vehicle and load short-circuit protection circuit |
| CN106206701A (en) * | 2015-05-29 | 2016-12-07 | 英飞凌科技股份有限公司 | Control the IGBT of reversely conduction |
| CN106206701B (en) * | 2015-05-29 | 2019-08-30 | 英飞凌科技股份有限公司 | The reversed conductive IGBT of control |
| CN106026626A (en) * | 2016-06-29 | 2016-10-12 | 浪潮集团有限公司 | Surge current suppressor based on RC time delay circuit |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C04 | Withdrawal of patent application after publication (patent law 2001) | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20130327 |