CN207638634U - A kind of NMOS tube high-end switch driving circuit - Google Patents
A kind of NMOS tube high-end switch driving circuit Download PDFInfo
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- CN207638634U CN207638634U CN201820032560.9U CN201820032560U CN207638634U CN 207638634 U CN207638634 U CN 207638634U CN 201820032560 U CN201820032560 U CN 201820032560U CN 207638634 U CN207638634 U CN 207638634U
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Abstract
The utility model discloses a kind of NMOS tube high-end switch driving circuits, include level shift circuit, dynamic clamp circuit and out drive stage.The level shift circuit is for being converted into high voltage control signal by the low-voltage control signal of input and being exported by output end, the level shift circuit includes high side level crossover connection, low side level conversion pipe and control pipe, the control pipe is connected between the high side level crossover connection and low side level conversion pipe, the gate source voltage for controlling the high side level crossover connection.The dynamic clamp circuit output end is connect with the grid of the control pipe, for providing bias voltage for the grid of the control pipe.The out drive stage is used to receive the high voltage control signal of the level shift circuit output and according to the high voltage control signal output drive signal.The thin gate device that the high side level crossover connection of the utility model uses, substantially increases the response speed of circuit, reduces research and development, production cost.
Description
Technical field
The utility model is related to driving circuit technical fields, and in particular to a kind of NMOS tube high-end switch driving circuit.
Background technology
Since the internal resistance of NMOS tube is low relative to PMOS tube, high-end switch is also often used NMOS tube, but NMOS tube
Often there is a problem of driving circuit complexity when as high-end switch, and power MOS pipe driving circuit is in systems as company
The part for connecing driving stage and controlled stage, needs logic level transition into drive signal.
A kind of NMOS tube high-end switch driving circuit as shown in Figure 1, including：First phase inverter INV1, the second phase inverter
INV2, the first PMOS tube P1, the second PMOS tube P2, third PMOS tube P3, the first NMOS tube N1, the second NMOS tube N2 and third
NMOS tube N3.Wherein, low-voltage control signal IN inputs the input terminal and second of the first phase inverter INV1, the second phase inverter INV2
The grid of the grid of NMOS tube N2, the output end of the first phase inverter INV1 and the first NMOS tube N1 connect, the second phase inverter INV2
Output end connected with the grid of third NMOS tube N3；The source electrode of first NMOS tube N1 is grounded GND, drain electrode the first PMOS tube of connection
The source electrode of the drain electrode of P1 and the grid of the second PMOS tube P2, the first PMOS tube P1 connects the first power supply VHV；Second NMOS tube N2's
Source electrode is grounded GND, the grid of the grid and third PMOS tube P3 of the drain drain electrode, the first PMOS tube P1 that connect the second PMOS tube P2
The source electrode of pole, the second PMOS tube P2 connects the first power supply V with the source electrode of third PMOS tube P3HV；The source electrode of third NMOS tube N3 connects
Ground GND, the drain electrode of drain electrode connection third PMOS tube P3, the source electrode of third PMOS tube P3 connect the first power supply VHV, third PMOS tube
The drain electrode of P3 is also as the output end output drive signal OUT of the NMOS tube high-end switch driving circuit.
It continues to refer to figure 1, when low-voltage control signal IN is high level state, the first NMOS tube N1 and third NMOS tube N3
Cut-off, the second NMOS tube N2 conductings；The conducting of second NMOS tube N2 causes the first PMOS tube P1 grid voltages to be pulled low, and makes first
PMOS tube P1 conductings；Due to the first PMOS tube P1 conductings, the first NMOS tube N1 cut-offs, the grid of the second PMOS tube P2 is high pressure,
Make the second PMOS tube P2 cut-offs；Due to the second PMOS tube P2 cut-offs, the second NMOS tube N2 conductings make the grid of third PMOS tube P3
For low pressure, the P3 conductings of third PMOS tube；The third PMOS tube P3 conductings and the N3 cut-offs of third NMOS tube of out drive stage, it is described
The output end of NMOS tube high-end switch driving circuit is high pressure.Conversely, when low-voltage control signal IN is low level, the first NMOS
Pipe N1 and the N3 conductings of third NMOS tube, the second NMOS tube N2 cut-offs；First NMOS tube N1's leads to the second PMOS tube P2's
Grid voltage is pulled low, and makes the second PMOS tube P2 conductings；Due to the second PMOS tube P2 conducting, the second NMOS tube N2 cut-offs make the
The grid of three PMOS tube P3 is high pressure, the P3 cut-offs of third PMOS tube；The third PMOS tube P3 cut-offs of out drive stage and third
The output end of NMOS tube N3 conductings, the NMOS tube high-end switch driving circuit is low pressure.This traditional NMOS tube is high-end to be opened
Close driving circuit, the first PMOS tube P1, the second PMOS tube P2 and third PMOS tube P3 gate voltage signal variation range all
For 0V~VHV, so the grid of the first PMOS tube P1, the second PMOS tube P2 and third PMOS tube P3 need to bear high pressure, it is necessary to adopt
With thick gate device.And the performance of thick gate device is poor, in order to ensure that the size of certain driving capability thickness gate device usually requires
It is very big, larger parasitic parameter is introduced, to limit the response speed of driving circuit.In addition thick grid device is manufactured in the semiconductors
Part needs extraly mask blank, and thick gate device is generally more expensive, to increase research and development, production cost.
Invention content
The technical problem to be solved by the utility model is to provide a kind of response speed that can improve circuit, reduce at
This NMOS tube high-end switch driving circuit.
In order to solve the above technical problems, the utility model uses technical solution as described below：
A kind of NMOS tube high-end switch driving circuit includes level shift circuit, dynamic clamp circuit and output driving
Grade.The level shift circuit be used for by the low-voltage control signal of input be converted into high voltage control signal and by output end it is defeated
Go out, the level shift circuit includes high side level crossover connection, low side level conversion pipe and control pipe, and the high side level turns
It is thin gate device to change pipe, and the control pipe is connected between the high side level crossover connection and low side level conversion pipe, for controlling
Make the gate source voltage of the high side level crossover connection.The dynamic clamp circuit output end is connect with the grid of the control pipe,
For providing bias voltage for the grid of the control pipe.The out drive stage is for receiving the level shift circuit output
High voltage control signal and according to the high voltage control signal output drive signal.
Preferably, the high side level crossover connection includes high side level crossover connection and the second high side level crossover connection, institute
It includes the first low side level conversion pipe and the second low side level conversion pipe to state low side level conversion pipe, and the control pipe includes
The first electricity of source electrode connection of first control pipe and the second control pipe, the first high side level crossover connection and the second high side level crossover connection
Source, the drain electrode connection of the grid of the first high side level crossover connection and the second high side level crossover connection, the second high side level crossover connection
The drain electrode of grid and the first high side level crossover connection connects, the source of drain electrode the first control pipe of connection of the first high side level crossover connection
Pole, the drain electrode of drain electrode the first control pipe of connection of the first low side level conversion pipe, the drain electrode connection of the second high side level crossover connection
The source electrode of second control pipe, the drain electrode of drain electrode the second control pipe of connection of the second low side level conversion pipe, the first control pipe and the
The grid of two control pipes connects the output end of the dynamic clamp circuit, the first low side level conversion and the second low side level conversion
The source electrode of pipe is grounded, the grid that the grid of the first low side level conversion pipe passes through the first phase inverter and the second low side level conversion pipe
The grid of connection, the second low side level conversion pipe inputs low-voltage control signal as the input terminal of low-voltage control signal, the
The source electrode of two control pipes exports high voltage control signal as the output end of the level shift circuit.
Preferably, the out drive stage includes upper driving tube, lower driving tube and the second phase inverter, the upper driving tube
Source electrode connects the first power supply, and the grid of upper driving tube connects the output end of the level shift circuit, the source of the lower driving tube
Pole is grounded, and the grid of lower driving tube is connected to the input terminal of low-voltage control signal, the drain electrode of lower driving tube by the second phase inverter
The drain electrode of driving tube and the output end output drive signal as the out drive stage in connection.
Preferably, the dynamic clamp circuit have including the first current mirror, the second current mirror, first resistor, second resistance,
3rd resistor, first switch pipe, second switch pipe and third switching tube, wherein first current mirror includes the first mirror image pipe
With the second mirror image pipe, second current mirror includes third mirror image pipe and the 4th mirror image pipe；The source electrode of the first switch pipe is logical
It crosses first resistor and is connected to the first power supply, the grid of first switch pipe connects second source, and the drain electrode of first switch pipe connects respectively
Grid and the drain electrode of the first mirror image pipe, the source electrode ground connection of the first mirror image pipe and the second mirror image pipe are connect, the grid of the second mirror image pipe connects
The drain electrode of first switch pipe is connect, the drain electrode of the second mirror image pipe is separately connected grid and the drain electrode of third mirror image pipe, third mirror image pipe
It is connected to second source with the source electrode of the 4th mirror image pipe, the grid of the 4th mirror image pipe connects the drain electrode of the second mirror image pipe, the 4th mirror
As the drain electrode of pipe is grounded by second resistance, the source electrode ground connection of the second switch pipe, the grid of second switch pipe inputs low pressure
The grid of bias voltage, the drain electrode for missing connection third switching tube of second switch pipe, third switching tube connects the 4th mirror image pipe
Drain electrode, the source electrode of third switching tube connects second source by 3rd resistor, and the source electrode of the third switching tube is also used as institute
State the output end output clamp voltage of dynamic clamp circuit.
The advantageous effects of the utility model are：When above-mentioned NMOS tube high-end switch drive circuit works, dynamic clamps
Position circuit output clamp voltage provides bias voltage for the gate source voltage of the control pipe, and the control pipe is to the high side level
The gate source voltage of crossover connection carries out clamper so that the gate source voltage of high side level crossover connection is defined within limits, is made
The high side level crossover connection obtained in circuit is not breakdown.Compared with traditional NMOS tube high-end switch driving circuit, this practicality is new
The high side level crossover connection of type is high pressure resistant using source and drain and the thin gate device of grid source low pressure, substantially increases the response speed of circuit
It spends, reduce research and development, production cost.
Description of the drawings
Fig. 1 is a kind of circuit diagram of NMOS tube driving circuit of the prior art；
The circuit diagram of the NMOS tube high-end switch driving circuit of Fig. 2 the utility model.
Specific implementation mode
To make those skilled in the art that the purpose of this utility model, technical solution and excellent be more clearly understood
Point is further elaborated the utility model below in conjunction with drawings and examples.
As shown in Fig. 2, in one embodiment of the utility model, NMOS tube high-end switch driving circuit includes level
Shift circuit 100, dynamic clamp circuit 200 and out drive stage 300.The level shift circuit 100 turns including high side level
Change pipe 110, low side level conversion pipe 120 and control pipe 130, the low pressure control that the level shift circuit 100 is used to input
Signal IN processed is converted into high voltage control signal and exports；The high side level crossover connection is thin gate device, and the control pipe 130 connects
It is connected between the high side level crossover connection 110 and low side level conversion pipe 120, for controlling the high side level crossover connection
110 gate source voltage.The dynamic clamp circuit 200 is connected in the first power supply VHVBetween ground GND, the dynamic clamp electricity
The output end on road 200 connects the grid of the control pipe 130 of the level shift circuit 100.The dynamic clamp circuit 200 is used for
According to the first power supply VHVVoltage value output clamp voltage Vclamp, the gate source voltage for the control pipe 130 provides biasing
Voltage.The out drive stage 300 is used to receive the high voltage control signal of the output of the level shift circuit 100 and according to described
High voltage control signal output drive signal OUT is driving NMOS tube high-end switch.
When NMOS tube high-end switch drive circuit works in the present embodiment, dynamic clamp circuit 200 is according to described first
Power supply VHVThe different clamp voltage V of voltage value dynamical outputclampGate source voltage for the control pipe 130 provides biased electrical
Pressure, the control pipe 130 carry out clamper to the gate source voltage of the high side level crossover connection 110 so that high side level crossover connection
110 gate source voltage is defined within limits so that the high side level crossover connection 110 in circuit is not breakdown.With biography
The NMOS tube high-end switch driving circuit of system is compared, and high side level crossover connection 110 uses thin gate device, substantially increases circuit
Response speed reduces research and development, production cost.
Preferably, as shown in Fig. 2, the high side level crossover connection 110 of the level shift circuit 100 and control pipe 130 are
PMOS tube, low side level conversion pipe 120 are NMOS tube.The high side level crossover connection 110 includes the first high side level crossover connection
P1 and the second high side level crossover connection P2, the control pipe 130 include the first control pipe P3 and the second control pipe P4, the low side
Level conversion pipe 120 includes the first low side level conversion pipe N1 and the second low side level conversion pipe N2.First high side level is converted
The source electrode of pipe P1 and the second high side level crossover connection P2 connect the first power supply VHV, the grid of the first high side level crossover connection P1 and
The drain electrode connection of two high side level crossover connection P2, the second high side level crossover connection P2 grids and the first high side level crossover connection P1's
Drain electrode connection, the source electrode of the first control pipe P3 of drain electrode connection of the first high side level crossover connection P1, the first low side level conversion pipe
The drain electrode of the first control pipe P3 of drain electrode connection of N1, the source of the second control pipe P4 of drain electrode connection of the second high side level crossover connection P2
Pole, the drain electrode of the second control pipe P4 of drain electrode connection of the second low side level conversion pipe N2, the first control pipe P3 and the second control pipe
The output end of the grid connection dynamic clamp circuit 200 of P4, the first low side level conversion pipe N1 and the second low side level conversion pipe
The source electrode of N2 is grounded, and the grid of the first low side level conversion pipe N1 passes through the first phase inverter INV1 and the second low side level conversion pipe
The grid of N2 connects, and the grid of the second low side level conversion pipe N2 inputs low pressure control as the input terminal of low-voltage control signal
The source electrode of signal IN processed, the second control pipe P4 connect the input terminal of out drive stage 300 and as the defeated of level shift circuit 100
Outlet exports high voltage control signal.
The first control pipe P3 and the second control pipe P4 is connected in the conducting branches of level shift circuit 100, control
The gate source voltage of 100 middle and high end level conversion pipe 110 of level shift circuit processed, wherein the first control pipe P3 controls the second high-end electricity
The gate source voltage of flat crossover connection P2, the second control pipe P4 control the gate source voltage of the first high side level crossover connection P1.
As shown in Fig. 2, the out drive stage 300 includes upper driving tube P5, lower driving tube N3 and the second phase inverter
INV2, the upper driving tube P5 are PMOS tube, and the lower driving tube N3 is NMOS tube.The source electrode connection the of the upper driving tube P5
One power supply VHV, the output end of the grid connection level shift circuit 100 of upper driving tube P5, the source electrode ground connection of the lower driving tube N3
The grid of GND, lower driving tube N3 are connected to the input terminal of low-voltage control signal by the second phase inverter INV2, lower driving tube N3's
The drain electrode of the upper driving tube P5 of drain electrode connection and as the output end output drive signal OUT of out drive stage 300 driving
NMOS tube high-end switch.
As shown in Fig. 2, the dynamic clamp circuit 200 includes the first current mirror 210, the second current mirror 220, first resistor
R1, second resistance R2,3rd resistor R3, first switch pipe P6, second switch pipe N6 and third switching tube P9, wherein described
One current mirror 210 include the first mirror image pipe N4 and the second mirror image pipe N5, second current mirror 220 include third mirror image pipe P7 and
4th mirror image pipe P8.The first switch pipe P6, third switching tube P9, third mirror image pipe P7 and the 4th mirror image pipe P8 are PMOS
Pipe.The second switch pipe N6, the first mirror image pipe N4 and the second mirror image pipe N5 are NMOS tube.
The source electrode of the first switch pipe P6 is connected to the first power supply V by first resistor R1HV, the grid of first switch pipe P6
Pole connects second source Vcc, the drain electrode of first switch pipe P6 is separately connected grid and the drain electrode of the first mirror image pipe N4, the first mirror image
The drain electrode of the grid connection first switch pipe P6 of the source electrode of pipe N4 and the second mirror image pipe N5 ground connection GND, the second mirror image pipe N5, second
The drain electrode of mirror image pipe N5 is separately connected grid and the drain electrode of third mirror image pipe P7, the source of third mirror image pipe P7 and the 4th mirror image pipe P8
Pole connects second source Vcc, the drain electrode of the second mirror image pipe N5 of grid connection of the 4th mirror image pipe P8, the drain electrode of the 4th mirror image pipe P8
It is grounded GND by second resistance R2, the source electrode of the second switch pipe N6 is grounded GND, and the grid input of second switch pipe N6 is low
Press bias voltage, the drain electrode for missing connection third switching tube P9 of second switch pipe N6, the grid connection of third switching tube P9 the
The source electrode of the drain electrode of four mirror image pipe P8, third switching tube P9 passes through 3rd resistor R3 connection second sources Vcc, the third switch
The source electrode of pipe P9 is also as the output end of the dynamic clamp circuit 200 output clamp voltage Vclamp。
NMOS tube high-end switch driving circuit shown in Fig. 2, the first resistor R1, second resistance R2 and 3rd resistor R3
Resistance value it is identical, that is, have R=R1=R2=R3；The first switch pipe P6, third switching tube P9, the first control pipe P3 and second
Control pipe P4 be same size PMOS tube, therefore first switch pipe P6, third switching tube P9, the first control pipe P3, second control
Tubulation P4 cut-in voltages having the same, that is, have VT=| Vth6|=| Vth9|=| Vth3|=| Vth4|.In dynamic clamp electricity
In road 200, the first mirror image pipe N4 and the second mirror image pipe N5 form current mirror, and third mirror image pipe P7 and the 4th mirror image pipe P8 form electricity
Mirror is flowed, then the electric current IR on first resistor R1 is copied on second resistance R2.
VHV≥Vcc+VTWhen, the P6 conductings of first switch pipe, the voltage V of first resistor R1 and the both ends second resistance R2R=IR*R
=VHV-Vcc-|Vth6|=VHV-Vcc-VT, the grid of the voltage-drop loading to third switching tube P9, third switching tube P9 is in cut-off
Area so that the source voltage V of third switching tube P9clamp=VR+|Vth9|=(VHV-Vcc-VT)+VT=VHV-Vcc。
VHV＜ Vcc+VTWhen, the P6 cut-offs of first switch pipe pass through the first mirror image pipe N4, the second mirror image pipe N5, third mirror image pipe
The electric current of P7 and the 4th mirror image pipe P8 are all almost 0, therefore the grid voltage of the grid of third switching tube P9 is 0, third switch
Pipe P9 is in linear zone, source voltage Vclamp=0.
It can be seen that the dynamic clamp circuit 200 can be according to the first power supply VHVVoltage value export different width
The clamp voltage V of valueclamp。
There are four types of working conditions for NMOS tube high-end switch driving circuit shown in Fig. 2：
The first is VHV≥Vcc+VT, low-voltage control signal IN be high level when：
Second low side level conversion pipe N2 conductings, the second control pipe P4 cut-offs, the first high side level crossover connection P1 conductings, the
The voltage of the grid of one high side level crossover connection P1 and upper driving tube the P5 namely source electrode of the second control pipe P4 is Vclamp+|Vth4
|, the source voltage of the first high side level crossover connection P1 and upper driving tube P5 are the input voltage V of the first power supplyHV, so first is high
It is V to hold the gate source voltage of level conversion pipe P1 and upper driving tube P5HV-(Vclamp+|Vth4|)=VHV-[(VHV-Vcc)+VT]=Vcc-
VT, clamper has been carried out by the gate source voltage of the second control pipe P4 couples of the first high side level crossover connection P1 and upper driving tube P5.The
One low side level conversion pipe N1 cut-offs, the first control pipe P3 conductings, the second high side level crossover connection P2 cut-offs, the second high side level
The voltage of the grid of the crossover connection P2 namely source electrode of the first control pipe P3 is VHV, the source electrode electricity of the second high side level crossover connection P2
Pressure is the input voltage V of the first power supplyHV, so the gate source voltage of the second high side level crossover connection P2 is 0.Upper driving tube P5 is led
It is logical, lower driving tube N3 cut-offs, the voltage V of the output end of out drive stage 300out=VHV。
Second is VHV≥Vcc+VT, low-voltage control signal IN be low level when：
First low side level conversion pipe N1 conductings, the first control pipe P3 cut-offs, the second high side level crossover connection P2 conductings, the
The voltage of the grid end of the two high side level crossover connection P2 namely source of the first control pipe P3 is Vclamp+|Vth3|, the second high-end electricity
The source voltage of flat crossover connection P2 is the input voltage V of the first power supplyHV, so the gate source voltage of the second high side level crossover connection P2
For VHV-(Vclamp+|Vth3|)=VHV-[(VHV-Vcc)+VT]=Vcc-VT, pass through P3 pairs of the second high side level conversion of the first control pipe
The gate source voltage of pipe P2 has carried out clamper.Second low side level conversion pipe N2 cut-offs, the second control pipe P4 conductings, the first high-end electricity
Flat crossover connection P1 cut-offs, the grid namely source electrode of the second control pipe P4 of the first high side level crossover connection P1 and upper driving tube P5
Voltage be VHV, the source voltage of the first high side level crossover connection P1 and upper driving tube P5 are the input voltage V of the first power supplyHV,
So the gate source voltage of the first high side level crossover connection P1 and upper driving tube P5 are 0.Upper driving tube P5 cut-offs, lower driving tube N3 are led
It is logical, the voltage V of the output end of out drive stage 300out=0.
The third is VHV＜ Vcc+VT, low-voltage control signal IN be high level when：
Second low side level conversion pipe N2 conductings, the second control pipe P4 cut-offs, the first high side level crossover connection P1 conductings, the
The voltage of the grid of one high side level crossover connection P1 and upper driving tube the P5 namely source electrode of the second control pipe P4 is Vclamp+|Vth4
|, the source voltage of the first high side level crossover connection P1 and upper driving tube P5 are the input voltage V of the first power supplyHV, so first is high
It is V to hold the gate source voltage of level conversion pipe P1 and upper driving tube P5HV-(Vclamp+|Vth4|)=VHV-(0+VT)=VHV-VT＜ (Vcc
+VT)-VT, clamped by the gate source voltage of the second control pipe P4 couples of the first high side level crossover connection P1 and upper driving tube P5
Position.First low side level conversion pipe N1 cut-offs, the first control pipe P3 conductings, the second high side level crossover connection P2 cut-offs, second is high
It is V to hold the voltage of the grid namely source electrode of the first control pipe P3 of level conversion pipe P2HV, the second high side level crossover connection P2's
Source voltage is the input voltage V of the first power supplyHV, so the gate source voltage of the second high side level crossover connection P2 is 0.Upper driving tube
P5 is connected, lower driving tube N3 cut-offs, the voltage V of the output end of out drive stage 300out=VHV。
4th kind is VHV＜ Vcc+VT, low-voltage control signal IN be low level when：
First low side level conversion pipe N1 conductings, the first control pipe P3 cut-offs, the second high side level crossover connection P2 conductings, the
The voltage of the grid end of the two high side level crossover connection P2 namely source of the first control pipe P3 is Vclamp+|Vth3|, the second high-end electricity
The source voltage of flat crossover connection P2 is the input voltage V of the first power supplyHV, so the gate source voltage of the second high side level crossover connection P2
For VHV-(Vclamp+|Vth3|)=VHV-[0+VT]=Vcc-VT, pass through P3 couples of the second high side level crossover connection P2's of the first control pipe
Gate source voltage has carried out clamper.Second low side level conversion pipe N2 cut-offs, the second control pipe P4 conductings, the conversion of the first high side level
The voltage of the grid namely source electrode of the second control pipe P4 of pipe P1 cut-offs, the first high side level crossover connection P1 and upper driving tube P5
For VHV, the source voltage of the first high side level crossover connection P1 and upper driving tube P5 are the input voltage V of the first power supplyHV, so the
The gate source voltage of one high side level crossover connection P1 and upper driving tube P5 are 0.Upper driving tube P5 cut-offs, lower driving tube N3 conductings are defeated
Go out the defeated voltage V of the output end of driving stage 300out=0.
In conclusion NMOS tube high-end switch driving circuit shown in Fig. 2 is under any type working condition, in circuit
The gate source voltage of first high side level crossover connection P1, the second high side level crossover connection P2 and upper driving tube P5 are respectively less than VccSo that
The first high side level crossover connection P1, the second high side level crossover connection P2 and upper driving tube P5 in circuit be not breakdown.With tradition
NMOS tube high-end switch driving circuit compare, the first high side level crossover connection P1, the second high side level crossover connection P2 and upper drive
The grid source of dynamic pipe P5 is high pressure resistant using source and drain and the thin gate device of grid source low pressure, substantially increases the response speed of circuit, reduces
Research and development, production cost.
The above is only the preferred embodiment of the present invention, rather than does limit in any form to the utility model
System.Those skilled in the art can impose various equivalent changes and improvement on the basis of the above embodiments, all to be wanted in right
The equivalent variations done in range or modification are asked, should fall within the protection scope of this utility model.
Claims (4)
1. a kind of NMOS tube high-end switch driving circuit, which is characterized in that the driving circuit includes：
Level shift circuit, for the low-voltage control signal of input to be converted into high voltage control signal and is exported by output end,
The level shift circuit includes high side level crossover connection, low side level conversion pipe and control pipe, the high side level conversion
Pipe is thin gate device, and the control pipe is connected between the high side level crossover connection and low side level conversion pipe, for controlling
The gate source voltage of the high side level crossover connection；
Dynamic clamp circuit, the output end of the dynamic clamp circuit are connect with the grid of the control pipe, for being the control
The grid of tubulation provides bias voltage；
Out drive stage, high voltage control signal for receiving level shift circuit output are simultaneously believed according to the high voltage control
Number output drive signal.
2. NMOS tube high-end switch driving circuit as described in claim 1, which is characterized in that the high side level crossover connection packet
High side level crossover connection and the second high side level crossover connection are included, the low side level conversion pipe includes that the first low side level turns
Pipe and the second low side level conversion pipe are changed, the control pipe includes the first control pipe and the second control pipe, the first high side level
The source electrode of crossover connection and the second high side level crossover connection connects the first power supply, the grid of the first high side level crossover connection and second high
The drain electrode connection of level conversion pipe, the second high side level is held to convert the drain electrode connection of tube grid and the first high side level crossover connection,
The source electrode of drain electrode the first control pipe of connection of first high side level crossover connection, the drain electrode connection first of the first low side level conversion pipe
The drain electrode of control pipe, the source electrode of drain electrode the second control pipe of connection of the second high side level crossover connection, the second low side level conversion pipe
Drain electrode the second control pipe of connection drain electrode, the first control pipe connects the dynamic clamp circuit with the grid of the second control pipe
The source electrode of output end, the first low side level conversion and the second low side level conversion pipe is grounded, the grid of the first low side level conversion pipe
Pole is connect by the first phase inverter with the grid of the second low side level conversion pipe, and the grid of the second low side level conversion pipe is made
Low-voltage control signal is inputted for the input terminal of low-voltage control signal, the source electrode of the second control pipe is as the level shift circuit
Output end exports high voltage control signal.
3. NMOS tube high-end switch driving circuit as claimed in claim 2, which is characterized in that the out drive stage includes upper
The source electrode of driving tube, lower driving tube and the second phase inverter, the upper driving tube connects the first power supply, the grid connection of upper driving tube
The output end of the level shift circuit, the source electrode ground connection of the lower driving tube, the grid of lower driving tube pass through the second phase inverter
It is connected to the input terminal of low-voltage control signal, the drain electrode of lower driving tube connects the drain electrode of upper driving tube and as the output driving
The output end output drive signal of grade.
4. NMOS tube high-end switch driving circuit as described in any one of claims 1-3, which is characterized in that the dynamic clamp
Circuit has to be opened including the first current mirror, the second current mirror, first resistor, second resistance, 3rd resistor, first switch pipe, second
Close pipe and third switching tube, wherein first current mirror includes the first mirror image pipe and the second mirror image pipe, second current mirror
Including third mirror image pipe and the 4th mirror image pipe；The source electrode of the first switch pipe is connected to the first power supply by first resistor, the
The grid of one switching tube connects second source, and the drain electrode of first switch pipe is separately connected grid and the drain electrode of the first mirror image pipe, the
The source electrode of one mirror image pipe and the second mirror image pipe is grounded, the drain electrode of the grid connection first switch pipe of the second mirror image pipe, the second mirror image
The drain electrode of pipe is separately connected grid and the drain electrode of third mirror image pipe, and the source electrode of third mirror image pipe and the 4th mirror image pipe is connected to second
Power supply, the grid of the 4th mirror image pipe connect the drain electrode of the second mirror image pipe, and the drain electrode of the 4th mirror image pipe is grounded by second resistance, institute
The source electrode ground connection of second switch pipe is stated, the grid of second switch pipe inputs low pressure bias voltage, and second switch pipe misses connection
The drain electrode of third switching tube, the grid of third switching tube connect the drain electrode of the 4th mirror image pipe, and the source electrode of third switching tube passes through the
Three resistance connect second source, and the source electrode of the third switching tube also exports clamper as the output end of the dynamic clamp circuit
Voltage.
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| CN201820032560.9U CN207638634U (en) | 2018-01-09 | 2018-01-09 | A kind of NMOS tube high-end switch driving circuit |
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| CN201820032560.9U CN207638634U (en) | 2018-01-09 | 2018-01-09 | A kind of NMOS tube high-end switch driving circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194126A (en) * | 2018-10-23 | 2019-01-11 | 珠海市微半导体有限公司 | A kind of power supply switch circuit |
| CN109933120A (en) * | 2019-03-11 | 2019-06-25 | 歌尔股份有限公司 | A kind of voltage commutation circuit and chip |
| CN110535459A (en) * | 2019-09-30 | 2019-12-03 | 安凯(广州)微电子技术有限公司 | A kind of digital level conversion circuit based on low voltage CMOS process |
| CN115987266A (en) * | 2023-01-16 | 2023-04-18 | 深圳市思远半导体有限公司 | Switching circuit, control method and chip of NMOS (N-channel metal oxide semiconductor) switching tube |
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2018
- 2018-01-09 CN CN201820032560.9U patent/CN207638634U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194126A (en) * | 2018-10-23 | 2019-01-11 | 珠海市微半导体有限公司 | A kind of power supply switch circuit |
| CN109194126B (en) * | 2018-10-23 | 2024-05-03 | 珠海一微半导体股份有限公司 | Power supply switching circuit |
| CN109933120A (en) * | 2019-03-11 | 2019-06-25 | 歌尔股份有限公司 | A kind of voltage commutation circuit and chip |
| CN110535459A (en) * | 2019-09-30 | 2019-12-03 | 安凯(广州)微电子技术有限公司 | A kind of digital level conversion circuit based on low voltage CMOS process |
| CN115987266A (en) * | 2023-01-16 | 2023-04-18 | 深圳市思远半导体有限公司 | Switching circuit, control method and chip of NMOS (N-channel metal oxide semiconductor) switching tube |
| CN115987266B (en) * | 2023-01-16 | 2023-11-28 | 深圳市思远半导体有限公司 | Switching circuit, control method and chip of NMOS switching tube |
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