CN103178694A - Insulated gate bipolar transistor gate driving push-pull circuit - Google Patents
Insulated gate bipolar transistor gate driving push-pull circuit Download PDFInfo
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- CN103178694A CN103178694A CN2013100654970A CN201310065497A CN103178694A CN 103178694 A CN103178694 A CN 103178694A CN 2013100654970 A CN2013100654970 A CN 2013100654970A CN 201310065497 A CN201310065497 A CN 201310065497A CN 103178694 A CN103178694 A CN 103178694A
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Abstract
The invention discloses an insulated gate bipolar transistor (IGBT) gate driving push-pull circuit. The IGBT gate driving push-pull circuit is powered by a positive-negative power supply of a driving chip secondary side, and output positive-negative level. A pre-push-pull circuit, a level converting circuit and a post-push-pull circuit share the positive-negative power supply of the driving chip secondary side. The output of the driving chip is connected with the input of the pre-push-pull circuit; the output of the pre-push-pull circuit is connected with the level converting circuit; the output of the level converting circuit is connected with the post-push-pull circuit; and the output of the post-push-pull circuit is connected with a gate driving resistor of the IGBT. The pre-push-pull circuit is combined with the level converting circuit to provide a driving signal of interlocking and a hardware dead zone for MOS (metal oxide semiconductors) of the post-push-pull circuit, so that direct communications of the interior of the MOS push-pull structure is avoided; and GS voltage of the MOS is limited in a range of +/- 20V, so that reliable operation of the MOS is guaranteed. Adopting the MOS, the post-push-pull circuit can cooperate with effective IGBT gate clamps to limit IGBT short-circuit currents, and improve operation reliability of the IGBT.
Description
Technical field
The present invention relates to a kind of igbt gate-drive push-pull circuit, relate in particular to the igbt gate-drive push-pull circuit of the negative voltage shutoff that coordinates effective gate pole clamper.
Background technology
So-called igbt (Insolated Gate Bipolar Transistor, IGBT) the gate pole clamper refers to by the gate voltage clamper of circuit design with igbt (IGBT), that is: when external action is arranged, when causing the passive lifting of IGBT gate voltage as short circuit, keep gate voltage by circuit design stable.This is the necessary functions that guarantees the IGBT reliably working.
During the IGBT short circuit, Ic acutely increases, and due to the (see figure 9) that exists of miller capacitance, in this process, IGBT gate pole current potential has the trend of lifting, and this effect comes from collector electrode, but not drive circuit.It is very large that the size of short circuit current is affected by gate voltage, so must carry out effective gate pole clamper.The mode of gate pole clamper generally has following several:
Mode one as shown in figure 10.When this mode was hanged down when the temperature of TVS, the TVS breakdown point descended, TVS conducting in the time of may causing working, and also the discreteness of TVS causes being difficult to carrying out Exact Design.
Mode two as shown in figure 11.The push-pull circuit of this mode adopts triode, cause power supply need to accomplish+16 ~+17V, add the pressure drop of schottky clamp diode, gate pole may arrive 17.5V could be by clamper, the clamper weak effect.
Mode three as shown in figure 12.The push-pull circuit of this mode makes power supply accomplish that 15V gets final product owing to adopting metal-oxide-semiconductor, coordinates gate pole clamper Schottky diode, and the clamper effect is better.
Along with the increase of IGBT power, IGBT drive reducing of resistance and module internal resistance, IGBT drives required peak inrush current and constantly rises.Yet the driving force that drives chip is limited, and a lot of occasions drive chip and directly use the scarce capacity that drives chip drives IGBT.For addressing this problem, the general method that adopts driving chip rear class to connect push-pull amplifier circuit improves the driving force that drives chip, to realize the driving of high-power IGBT.
Below four kinds of topologys are common driving chip rear class push-pull amplifier circuit topologys.The first is that document is extensively mentioned, other three kinds are derived on this basis, is also extensively used by frequency converter, servo-driver producer.
1, triode is recommended and is amplified topology (one) (see figure 1)
Fig. 5 of paper " a kind of drive circuit for high-power IGBT " (" electric drive automation " the 1st phase in 2010), Fig. 3 in " a kind of drive circuit of New IGBT module " (" ZhongKai Agriculture Engineering Academy journal " the 3rd phase in 2012), Fig. 1 in " the practical drive circuit of a kind of IGBT " (" electric drive " the 6th phase in 1999) and patent " a kind of IGBT drive and protection circuit " (application number: the Fig. 3 200910225997.X), " drive circuit that suppresses the IGBT overcurrent " (application number: the Fig. 4 201120390253.6), (application number: the Fig. 1 201210214858.9) ~ 5 all adopt similar triode to recommend the form of amplifying topology () " a kind of IGBT drives push-pull circuit ".
The advantage that this is topological: (1) positive logic.(2) be simple and easy to use.
The shortcoming that this is topological: (1) gate pole clamper weak effect, suppress IGBT short circuit current ability.Triode is when peak drive current is larger, and the CE pressure drop becomes higher, and also has certain saturation voltage drop during saturation conduction.Therefore, for the Vge that guarantees driven IGBT is+15V, supply voltage must accomplish+16 ~+17V.Yet, the gate pole clamper weak effect that the higher indirect consequence that causes of power supply is drive circuit, driven IGBT short circuit current increases greatly, and the risk that IGBT damages increases.(2) the inner existence of push-pull configuration led directly to possibility.May exist and recommend up and down phenomenon straight-through between pipe, cause Switching Power Supply moment saturated, affect whole system and power, greatly reduce system reliability.(3) loss is larger.The saturation voltage drop that 0.7V is arranged during the triode saturation conduction, when doing driving push-pull cascade, loss is larger, and especially in the higher occasion of switching frequency, heating is obviously.
2, triode is recommended and is amplified topology (two) (see figure 2)
The advantage that this is topological: be simple and easy to use.
The shortcoming that this is topological: (1) gate pole clamper weak effect, suppress IGBT short circuit current ability.Triode is when peak drive current is larger, and the CE pressure drop becomes higher, and also has certain saturation voltage drop during saturation conduction.Therefore, for the Vge that guarantees driven IGBT is+15V, supply voltage must accomplish+16 ~+17V.Yet, the gate pole clamper weak effect that the higher indirect consequence that causes of power supply is drive circuit, driven IGBT short circuit current increases greatly, and the risk that IGBT damages increases.(2) the inner existence of push-pull configuration led directly to.Straight-through between pipe recommended up and down in existence, causes Switching Power Supply moment saturated, affect whole system and powers, and greatly reduces system reliability.So-called straight-through, refer to that top tube and down tube conducting simultaneously in half-bridge topology causes the phenomenon of a class short circuit.This phenomenon harmfulness is very large, easily causes system's irrecoverability to damage.(3) loss is larger.The saturation voltage drop that 0.7V is arranged during the triode saturation conduction, when doing driving push-pull cascade, loss is larger, and especially in the higher occasion of switching frequency, heating is obviously.(4) antilogical.
3, metal-oxide-semiconductor is drawn and is amplified topology (one) (see figure 3)
The advantage that this is topological: (1) gate pole clamper is effective, can effectively suppress the IGBT short circuit current.Owing to adopting the metal-oxide-semiconductor push-pull topology, supply voltage can be accomplished+15V, coordinates schottky clamp diode to carry out the gate pole clamper, and effect is better, can effectively suppress the increase of driven IGBT short circuit current, avoids IGBT to damage.(2) loss is lower.It is lower, particularly in the higher occasion of switching frequency, with the obvious advantage that metal-oxide-semiconductor is done the loss of driving push-pull topology.(3) be simple and easy to use.(4) positive logic.
The shortcoming that this is topological: (1) metal-oxide-semiconductor GS overtension.Metal-oxide-semiconductor GS will bear ± 23V voltage, surpasses ± 20V, and general metal-oxide-semiconductor can't be realized, must buy special metal-oxide-semiconductor.The GS voltage of (2) recommending metal-oxide-semiconductor can be subjected to the impact of IGBT gate voltage.When the gate voltage lifting, along with the G point voltage rising of IGBT, upper metal-oxide-semiconductor GS voltage reduces gradually, and the conduction voltage drop of metal-oxide-semiconductor increases, and causing the IGBT gate voltage is the 11V left and right, and far below 15V, IGBT can not be fully open-minded.(3) the inner existence of push-pull configuration led directly to possibility.Straight-through possibility of pipe recommended up and down in existence, causes Switching Power Supply moment saturated, affects whole system and powers, and greatly reduces system reliability.
4, metal-oxide-semiconductor is recommended and is amplified topology (two) (see figure 4)
The advantage that this is topological: (1) gate pole clamper is effective, can effectively suppress the IGBT short circuit current.Owing to adopting the metal-oxide-semiconductor push-pull topology, supply voltage can be accomplished+15V, coordinates schottky clamp diode to carry out the gate pole clamper, and effect is better, can effectively suppress the increase of driven IGBT short circuit current, avoids IGBT to damage.(2) loss is lower.It is lower, particularly in the higher occasion of switching frequency, with the obvious advantage that metal-oxide-semiconductor is done the loss of driving push-pull topology.(3) be simple and easy to use.The GS voltage of (4) recommending metal-oxide-semiconductor is not subjected to the impact of IGBT gate voltage.Avoid the metal-oxide-semiconductor conduction voltage drop that the lifting of gate pole level brings to increase phenomenon, the gate voltage of driven IGBT can reach normal 15V, and IGBT is fully open-minded.
The shortcoming that this is topological: (1) metal-oxide-semiconductor GS overtension.Metal-oxide-semiconductor GS will bear ± 23V voltage, surpasses ± 20V, and general metal-oxide-semiconductor can't be realized, must buy special metal-oxide-semiconductor.(2) the inner existence of push-pull configuration led directly to.It is straight-through that pipe is recommended up and down in existence, causes Switching Power Supply moment saturated, affect whole system and power, and greatly reduces the reliability of system.(3) antilogical.
Existing IGBT drives the technological deficiency that push-pull circuit exists, and is summarized as follows:
The following technical problem of triode push-pull topology ubiquity: (1) gate pole clamper weak effect, the IGBT short circuit current suppresses ability; (2) loss is larger; (3) push-pull configuration inside may exist straight-through, the entire system poor reliability.
The following technical problem of metal-oxide-semiconductor push-pull topology ubiquity: (1) metal-oxide-semiconductor GS voltage is higher than ± 20V, push-pull circuit poor reliability; (2) push-pull configuration inside may exist straight-through, the entire system poor reliability; (3) the GS voltage of metal-oxide-semiconductor may be subject to the impact of driven IGBT gate voltage, causes the metal-oxide-semiconductor conduction voltage drop excessive.
On the whole, adopt the triode push-pull topology cannot realize effective gate pole clamper, cause driven IGBT easily to damage when short circuit occurs, and adopt metal-oxide-semiconductor push-pull topology metal-oxide-semiconductor itself easily to damage, cause the entire system poor reliability.
Summary of the invention
Technical problem to be solved by this invention is to overcome the defective that prior art exists, a kind of igbt gate-drive push-pull circuit has been proposed, both can coordinate effective gate pole clamper, guarantee the reliability of driven IGBT, can guarantee that again the inner metal-oxide-semiconductor GS of push-pull configuration voltage power supply is in the place of safety, can also avoid simultaneously the straight-through phenomenon of push-pull configuration inside, guarantee the reliability of entire system.
The present invention realizes that the technical scheme that goal of the invention adopts is: igbt gate-drive push-pull circuit, comprise driving chip and IGBT gate drive circuit, and drive chip secondary positive-negative power supply, positive negative level output; It is characterized in that: also comprise prime push-pull circuit, level shifting circuit and rear class push-pull circuit; The positive-negative power of described prime push-pull circuit, level shifting circuit and rear class push-pull circuit common drive chip secondary, the output that drives chip connects the input of prime push-pull circuit, the output of prime push-pull circuit is connected with level shifting circuit, the output of level shifting circuit is connected with the rear class push-pull circuit, and the output of rear class push-pull circuit is connected with IGBT gate-drive resistance.
Described prime push-pull circuit is by resistance R
1, PNP triode Q
1With NPN triode Q
2Consist of; Resistance R
1One end is connected with the driving chip output, the other end and PNP triode Q
1With NPN triode Q
2Base stage be connected; PNP triode Q
1Emitter be connected with positive supply, NPN triode Q
2Emitter be connected with negative supply, PNP triode Q
1Collector electrode give late-class circuit as output, NPN triode Q
2Collector electrode give late-class circuit as another output.
Level shifting circuit is by resistance R
2, resistance R
3, resistance R
4Be followed in series to form; Resistance R
2Be connected with positive supply, resistance R
4Be connected with negative supply; Resistance R
2With resistance R
3Tie point (node) O
1PNP triode Q with the prime push-pull circuit
1Collector electrode is connected, and gives late-class circuit as the output of level shifting circuit simultaneously; Resistance R
3With resistance R
4Tie point (node) O
2NPN triode Q with the prime push-pull circuit
2Collector electrode be connected, give late-class circuit as the output of level shifting circuit simultaneously.
The rear class push-pull circuit comprises resistance R
5, R
6, PMOS (P type metal-oxide-semiconductor, Q
3) and NMOS(N type metal-oxide-semiconductor, Q
4); Resistance R
5The node O of one end and level shifting circuit
1Be connected, resistance R
5The other end be connected with the grid of PMOS, resistance R
6The node O of one end and level shifting circuit
2Be connected, resistance R
6The other end be connected with the grid of NMOS.The source electrode of PMOS is connected with driving chip secondary positive supply, and drain electrode is as output O
3The resistance R of opening with the IGBT gate drive circuit
7Be connected; The source electrode of NMOS is connected with driving chip secondary negative supply, and drain electrode is as output O
4Shutoff resistance R with the IGBT gate drive circuit
8Be connected.
Prime push-pull circuit and level shifting circuit combine, the driving signal of interlocking is provided for the metal-oxide-semiconductor of rear class push-pull circuit, and has added the hardware dead band, avoided the straight-through of metal-oxide-semiconductor push-pull configuration inside, and the GS voltage control of metal-oxide-semiconductor has guaranteed the reliably working of metal-oxide-semiconductor within ± 20V.
Basic principle of the present invention is: the pwm signal of the general positive negative level of driving chip output, through prime push-pull circuit and level shifting circuit, be transformed into the required gate-drive level of the metal-oxide-semiconductor that meets the rear class push-pull circuit, and the metal-oxide-semiconductor gate-drive level signal through conversion possesses the characteristic of interlocking, and has added the hardware Dead Time.The rear class push-pull circuit connects driven IGBT, for the direct push-pull cascade of IGBT gate-drive, works as Q
3When opening, by driving resistance R
7Give the charging of IGBT gate pole, IGBT is open-minded, works as Q
4When opening, by driving resistance R
8Discharge loop is provided for the IGBT gate pole, IGBT turn-offs.The rear class push-pull configuration adopts the metal-oxide-semiconductor structure, adds the Schottky diode D of gate pole clamper
1, both have formed effective gate pole clamper jointly, have effectively limited the short circuit current of IGBT, can reliably protecting IGBT when short circuit occurs.And when IGBT turn-offed, the gate pole level was stabilized in negative voltage, can prevent effectively that the gate pole that the Miller effect causes from misleading.
Course of work waveform of the present invention is seen Fig. 7, in figure,
When output output high level, Q
2Conducting, Q
2With R
4Short circuit is with Q
4Gate voltage be locked in about 0V, guarantee Q
4R is passed through in not conducting
2, R
3Dividing potential drop guarantees Q
3GS voltage be about
, higher than-20V, guaranteed Q
3Reliably working.Q
3Conducting, V
CCPass through Q
3, R
7Give the charging of IGBT gate pole, IGBT is open-minded.When the output output low level, Q
1Conducting, Q
1With R
2Short circuit is with Q
3Gate voltage be locked in about 0V, guarantee Q
3R is passed through in not conducting
3, R
4Dividing potential drop guarantees Q
4GS voltage be about
, lower than 20V, guaranteed Q
4Reliably working.Q
4Conducting, the IGBT gate pole passes through Q
4, R
8Discharge, IGBT turn-offs.When the output level changes between positive and negative, triode Q
1, Q
2Straight-through phenomenon can occur, and namely a pipe does not also turn-off fully, and the another one pipe is open-minded.For in powerful IGBT, R
7+ R
8Value much smaller than R
3, i.e. Q
1, Q
2Straight-through load current is much smaller than Q
3, Q
4Straight-through load current, therefore, Q
1, Q
2Straight-through almost on not impact of the stability of a system, Q
3, Q
4Straight-through can affect greatly system reliability.Work as Q
1, Q
2When straight-through phenomenon occurs, Q
3, Q
4Gate voltage is locked, Q
3, Q
4All turn-off, pass through Q
1, Q
2straight-throughly guaranteed Q
3, Q
4Can not lead directly to, give Q
3, Q
4Added the hardware Dead Time.In addition, after the secondary positive-negative power was added on the driving chip, when system did not find PWM, it was low driving chip output output, Q
1Conducting, Q
4Conducting, IGBT turn-offs.Be system when initially powering on, the IGBT gate voltage is for negative, and IGBT is blocked, and has guaranteed the reliability of system.
Technique effect of the present invention is as follows:
The first, the rear class push-pull configuration adopts metal-oxide-semiconductor, can coordinate effective gate pole clamper, and restriction IGBT short circuit current improves the IGBT functional reliability;
The second, there is not the bridge arm direct pass phenomenon in rear class push-pull configuration inside, improves the entire system reliability;
The 3rd, rear class push-pull configuration metal-oxide-semiconductor GS absolute value of voltage improves the metal-oxide-semiconductor functional reliability lower than 20V;
The 4th, the drive circuit loss is less;
The 5th, rear class push-pull configuration metal-oxide-semiconductor GS voltage can not be subject to the impact of IGBT gate pole level, and IGBT is switch reliably.
Above technique effect has solved conventional I GBT and has driven the ubiquitous technical problem of push-pull configuration, has improved the reliability of system on largely.
Description of drawings
Fig. 1 is triode push-pull amplifier circuit topological diagram ().
Fig. 2 is triode push-pull amplifier circuit topological diagram (two).
Fig. 3 is metal-oxide-semiconductor push-pull amplifier circuit topological diagram ().
Fig. 4 is metal-oxide-semiconductor push-pull amplifier circuit topological diagram (two).
Fig. 5 is igbt gate-drive push pull configeration schematic diagram of the present invention.
Fig. 6 is igbt gate-drive push-pull circuit figure of the present invention.
Fig. 7 is igbt gate-drive push-pull circuit course of work oscillogram of the present invention.
Fig. 8 is the typical application circuit figure of ACPL-332J.
Fig. 9 is IGBT the Miller effect schematic diagram.
Figure 10 is IGBT gate pole clamper mode one schematic diagram.
Figure 11 is IGBT gate pole clamper mode two schematic diagrames.
Figure 12 is IGBT gate pole clamper mode three schematic diagrames.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further details.
Fig. 5 is the structural representation that the IGBT of the negative voltage shutoff of the effective gate pole clamper of cooperation of the present invention drives push-pull circuit, is made of driving chip, IGBT gate-drive resistance, gate-drive push-pull circuit.Described gate-drive push-pull circuit is made of prime push-pull circuit, level shifting circuit and rear class push-pull circuit.The positive-negative power of described prime push-pull circuit, level shifting circuit and rear class push-pull circuit common drive chip secondary.The output that drives chip is connected with the prime push-pull circuit, and the output of prime push-pull circuit is connected with level shifting circuit, and the output of level shifting circuit is connected with the rear class push-pull circuit, and the output of rear class push-pull circuit is connected with IGBT gate-drive resistance.
Fig. 6 is the concrete exemplary circuit that the IGBT of the negative voltage shutoff of the effective gate pole clamper of cooperation of the present invention drives push-pull circuit.Drive chip and refer to the secondary positive-negative power supply, the isolation drive chip of positive negative level output as ACPL-332J, ACPL-T350, ACPL-316J, ADUM3223, describes as an example of ACPL-332J example.The prime push-pull circuit is mainly by resistance R
1, triode Q
1And Q
2Form, level shifting circuit is by resistance R
2, R
3, R
4Form, the rear class push-pull circuit is by resistance R
5, R
6, metal-oxide-semiconductor Q
3And Q
4Form.Q
5Be driven IGBT, R
7Be the resistance of opening of IGBT gate drive circuit, R
8Be the pass resistance break of IGBT gate drive circuit, D
1Be IGBT gate pole clamp diode.
In the embodiment of Fig. 6, positive supply V
CC13 pin of access ACPL-332J, negative supply V
EE9 pin and 12 pin of access ACPL-332J, 16 pin of the emitter access ACPL-332J of driven IGBT, 11 pin of ACPL-332J are received resistance R as the input of prime push-pull circuit
1An end, C1 and C2 are Support Capacitor, C1 is connected between VCC and E, C2 is connected between E and VEE, for ACPL-332J and IGBT drive circuit provide energy.Because the IGBT that focuses on of the present invention drives push-pull circuit, therefore the interface pin that drives optocoupler ACPL-332J and push-pull circuit is only described, connection and the peripheral circuit of other pin do not repeat them here, and the typical application circuit of ACPL-332J is referring to Fig. 8.Resistance R
1The other end and triode Q
1, Q
2Base stage be connected.Triode Q
1Emitter and positive supply V
CCBe connected, triode Q
2Emitter and negative supply V
EEBe connected.Resistance R
2An end and positive supply V
CCBe connected, the other end and resistance R
3An end be connected, this node called after O
1, resistance R
3The other end and resistance R
4An end be connected, this node called after O
2, resistance R
4The other end and negative supply V
EEBe connected.Triode Q
1Collector electrode and O
1Node is connected, triode Q
2Collector electrode and O
2Node is connected.Resistance R
5An end be connected to Q
1Node, the other end and PMOS pipe Q
3Grid be connected.Resistance R
6An end be connected to O
2Node, the other end and NMOS pipe Q
4Grid be connected.PMOS manages Q
3Source electrode access positive supply V
CC, NMOS manages Q
4Source electrode access negative supply V
EEPMOS manages Q
3Drain electrode be connected to the resistance R of opening of IGBT gate drive circuit
7An end, NMOS manages Q
4Drain electrode be connected to the shutoff resistance R of IGBT gate drive circuit
8An end.Q
5Be driven IGBT, D
1Be IGBT gate pole clamp diode, R
7, R
8, D
1Peripheral components for IGBT drives not within the solution of the present invention, does not repeat them here.Other peripheral components that IGBT drives also skip at this.IGBT of the present invention drives push-pull circuit can effectively coordinate D
1Carry out the gate pole clamper, reach the purpose of limiting short-circuit current, assurance IGBT reliably working.
During normal operation, driving chip output signal is the PWM ripple, and high level is approximately positive supply V
CC, low level is approximately negative supply V
EEOutput is by base resistance R
1Drive PNP triode Q
1With NPN triode Q
2When output is V
CCThe time, NPN triode Q
2Conducting, O
2Level is pulled down near V
EE, with resistance R
4Short circuit, locking NMOS pipe Q
4GS voltage make it near 0V, NMOS pipe Q
4Not open-minded; Meanwhile, PNP triode Q
1Resistance R is passed through in not conducting
3, R
5With triode Q
2Give metal-oxide-semiconductor Q
3The gate pole charging makes PMOS pipe Q
3Open-minded, as PMOS pipe Q
3The GS voltage stabilization after, (V
EE-V
CC) the approximate resistance R of passing through
2, R
3Dividing potential drop is managed Q with PMOS
3The GS voltage stabilization approximate
Guarantee PMOS pipe Q
3GS voltage higher than-20V, thereby guarantee PMOS pipe Q
3Reliably working, Q
3Conducting, positive supply V
CCPass through Q
3With open resistance R
7Give the charging of IGBT gate pole, IGBT Q
5Open-minded, after the IGBT gate pole is stable, GE voltage remains on approximate V
CCWhen output is V
EEThe time, PNP triode Q
1Conducting, Q
1Level is drawn high near V
CC, with resistance R
2Short circuit, locking PMOS pipe Q
3GS voltage make it near 0V, PMOS pipe Q
3Not open-minded; Meanwhile, NPN triode Q
2Not conducting, positive supply V
CCPass through resistance R
3, R
6With triode Q
1To NMOS pipe Q
4The gate pole charging makes NMOS pipe Q
4Open-minded, as NMOS pipe Q
4The GS voltage stabilization after, the approximate resistance R of passing through
3, R
4Dividing potential drop is managed Q with NMOS
4The GS voltage stabilization approximate
, guarantee NMOS pipe Q
4Gate voltage lower than+20V, thereby guarantee NMOS pipe Q
4Reliably working, Q
4Conducting, the IGBT gate pole passes through Q
4With the shutoff resistance R
8Take out and flow to negative supply V
EE, IGBT Q
5Turn-off, after the IGBT gate pole is stable, GE voltage remains on approximate V
EE
When system initially powers on, drive chip ACPL-332J former limit light-emitting diode obstructed, secondary V
CC, V
EEElectric after, output output is approximate V
EEAccording to above-mentioned analysis, this moment triode Q
1Conducting, NMOS manages Q
4Conducting, IGBT Q
5Gate voltage be locked in V
EE, IGBT Q
5Be blocked, turn-off, system reliability is high.
As output from V
CCChange to V
EE, triode Q
2Keep conducting, triode Q
1Also can conducting, although this moment prime push-pull circuit brachium pontis two pipe Q
1, Q
2Occured to lead directly to, but connected resistance R in this loop
3, load current is less, can not affect power generation, also can not affect system reliability.Meanwhile, triode Q
1, Q
2Open and locked metal-oxide-semiconductor Q
3, Q
4GS voltage, guarantee metal-oxide-semiconductor Q
3, Q
4Not conducting, thus the metal-oxide-semiconductor of avoiding originally certainly existing in above-mentioned metal-oxide-semiconductor push-pull configuration two leads directly to problem.In general, IGBT drives resistance R
7+ R
8Will be much smaller than resistance R
3This difference is especially obvious for middle high-power IGBT, so the straight-through harmfulness of rear class push-pull circuit inside is much larger than the straight-through harmfulness of prime push-pull circuit inside, the straight-through of prime push-pull circuit inside do not affect system reliability, and the straight-through system reliability that has a strong impact on of rear class push-pull circuit inside.Therefore push-pull circuit of the present invention can be avoided the straight-through of rear class push-pull circuit, improves system reliability.
The present invention compares with traditional triode push-pull topology because the rear class push-pull circuit adopts the metal-oxide-semiconductor push-pull configuration, in switching process the metal-oxide-semiconductor loss less, and under stable situation, the metal-oxide-semiconductor pressure drop is lower, V
CCCan just accomplish 15V, not need to accomplish 16 ~ 17V, thereby can coordinate Schottky diode D
1Carry out effective gate pole clamper, the short circuit current of restriction IGBT improves system reliability.
In a concrete execution mode, V
CCBe 15V, V
EEFor-8V.Metal-oxide-semiconductor Q is described according to the above-mentioned course of work
3Open moment, GS voltage is about-11V, open stable after, GS voltage is about-15V; Metal-oxide-semiconductor Q
4Open moment, GS voltage is about+11V, open stable after, GS voltage is about+15V.As seen, within the GS voltage of metal-oxide-semiconductor is limited in range of safety operation ± 20V, solve the intrinsic problem of conventional MOS pipe push-pull configuration, improved system reliability.
As a kind of better execution mode wherein, above-mentioned resistance R
1, R
2, R
3, R
4, R
5, R
6Resistance can be respectively 56 Ω, 650 Ω, 350 Ω, 650 Ω, 650 Ω, 650 Ω.Above-mentioned triode Q
1, Q
2Model can select 2SA1952,2SC5103.Above-mentioned metal-oxide-semiconductor Q
3, Q
4Model can select IRFR9120NPBF, IRFR120NPBF.
The IGBT that the negative voltage of the effective gate pole clamper of the cooperation of the invention described above turn-offs drives push-pull circuit, is to utilize the low conduction voltage drop of metal-oxide-semiconductor to realize the reduction of driving power, thereby coordinates diode to carry out effective gate pole clamper, restriction IGBT short circuit current size.Utilize simultaneously structure and the level-conversion circuit of prime triode, the GS voltage of restriction rear class metal-oxide-semiconductor, and locking rear class metal-oxide-semiconductor avoid rear class to occur straight-through, guarantee that metal-oxide-semiconductor is operated in the reliable interval.Push-pull circuit of the present invention also possesses the characteristic of positive logic, can reliably block IGBT after system initially powers on.Therefore the present invention possesses effective gate pole clamper of cooperation, and loss is low, the characteristics such as avoids leading directly to, larger raising the reliability of system.
Switch Q in the present invention
1, Q
2, Q
3, Q
4Can be according to driven IGBT flexible choice, corresponding resistance is also changed thereupon, and in theory for the IGBT of any electric current, driving push-pull circuit of the present invention all can be suitable for.
Claims (4)
1. an igbt gate-drive push-pull circuit, comprise driving chip and IGBT gate drive circuit, drives chip secondary positive-negative power supply, positive negative level output; It is characterized in that: also comprise prime push-pull circuit, level shifting circuit and rear class push-pull circuit; The positive-negative power of described prime push-pull circuit, level shifting circuit and rear class push-pull circuit common drive chip secondary, the output that drives chip connects the input of prime push-pull circuit, the output of prime push-pull circuit is connected with level shifting circuit, the output of level shifting circuit is connected with the rear class push-pull circuit, and the output of rear class push-pull circuit is connected with IGBT gate-drive resistance.
2. igbt gate-drive push-pull circuit according to claim 1, it is characterized in that: described prime push-pull circuit is by resistance (R
1), PNP triode (Q
1) and NPN triode (Q
2) consist of; Resistance (R
1) end with drive chip output and be connected, the other end and PNP triode (Q
1) and NPN triode (Q
2) base stage be connected; PNP triode (Q
1) emitter be connected with positive supply, NPN triode (Q
2) emitter be connected with negative supply, PNP triode (Q
1) collector electrode give late-class circuit as output, NPN triode (Q
2) collector electrode give late-class circuit as another output.
3. igbt gate-drive push-pull circuit according to claim 2, it is characterized in that: described level shifting circuit is by resistance (R
2), resistance (R
3), resistance (R
4) be followed in series to form; Resistance (R
2) be connected with positive supply, resistance (R
4) be connected with negative supply; Resistance (R
2) and resistance (R
3) tie point (O
1) with the PNP triode (Q of prime push-pull circuit
1) collector electrode is connected, and gives late-class circuit as the output of level shifting circuit simultaneously; Resistance (R
3) and resistance (R
4) tie point (O
2) with the NPN triode (Q of prime push-pull circuit
2) collector electrode be connected, give late-class circuit as the output of level shifting circuit simultaneously.
4. igbt gate-drive push-pull circuit according to claim 3, it is characterized in that: described rear class push-pull circuit comprises resistance (R
5, R
6), PMOS (Q
3) and NMOS(Q
4); Resistance R
5Node (the O of one end and level shifting circuit
1) be connected, resistance (R
5) the other end be connected with the grid of PMOS, resistance (R
6) node (O of an end and level shifting circuit
2) be connected, resistance (R
6) the other end be connected with the grid of NMOS; The source electrode of PMOS is connected with driving chip secondary positive supply, and drain electrode is as output (O
3) with the IGBT gate drive circuit open resistance (R
7) be connected; The source electrode of NMOS is connected with driving chip secondary negative supply, and drain electrode is as output (O
4) with the pass resistance break (R of IGBT gate drive circuit
8) be connected.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065497.0A CN103178694B (en) | 2013-03-01 | 2013-03-01 | Insulated gate bipolar transistor gate driving push-pull circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065497.0A CN103178694B (en) | 2013-03-01 | 2013-03-01 | Insulated gate bipolar transistor gate driving push-pull circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103178694A true CN103178694A (en) | 2013-06-26 |
| CN103178694B CN103178694B (en) | 2015-01-21 |
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|---|---|---|---|
| CN201310065497.0A Active CN103178694B (en) | 2013-03-01 | 2013-03-01 | Insulated gate bipolar transistor gate driving push-pull circuit |
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| CN109951060A (en) * | 2019-03-29 | 2019-06-28 | 西北工业大学 | High voltage half-bridge driving circuit |
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| CN111474437B (en) * | 2019-11-27 | 2022-01-28 | 南京埃斯顿自动化股份有限公司 | Method for real-time online prediction of electrolytic capacitor life |
| CN111130532A (en) * | 2019-12-31 | 2020-05-08 | 苏州伟创电气科技股份有限公司 | IGBT gate push-pull driving circuit and method and IGBT driving circuit |
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Effective date of registration: 20190318 Address after: 211100 No. 155 General South Road, Jiangning Economic and Technological Development Zone, Nanjing City, Jiangsu Province Patentee after: Nanjing Estun Automation Co., Ltd. Address before: 211100 No. 155 General Avenue, Jiangning Economic Development Zone, Nanjing City, Jiangsu Province Co-patentee before: Nanjing Estun Automation Co., Ltd. Patentee before: Nanjing Estun Automatic Control Technology Co., Ltd. |