CN103326547A - IGBT drive circuit with protection time delay - Google Patents
IGBT drive circuit with protection time delay Download PDFInfo
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- CN103326547A CN103326547A CN2013102407855A CN201310240785A CN103326547A CN 103326547 A CN103326547 A CN 103326547A CN 2013102407855 A CN2013102407855 A CN 2013102407855A CN 201310240785 A CN201310240785 A CN 201310240785A CN 103326547 A CN103326547 A CN 103326547A
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Abstract
The invention discloses an IGBT drive circuit with protection time delay. High voltage isolation and signal transmission are achieved through a high-speed drive optical coupler. The capacity of outputting currents is improved through a push-pull amplifier circuit, so that a high-power IGBT is driven. When overcurrent occurs in the IGBT, after protection time delay by a Vce desaturation detection circuit for about 2us, a grid voltage reduction circuit and a breakdown signal output circuit act at the same time, so that grid drive voltage is reduced slowly, overcurrent signals are output to a controller through the optical coupler, and therefore reliable overcurrent protection can be carried out on the IGBT. Meanwhile, the IGBT drive circuit has the self-recovery function, and can work normally without manual reset.
Description
Technical field
The present invention relates to a kind of IGBT drive circuit, be specifically related to a kind of drive circuit that can realize driving the IGBT normal operation and when the IGBT overcurrent, after the overprotection time-delay, fall the grid voltage protection.
Background technology
IGBT is the insulated gate bipolar transistor, is a kind of New Type Power Devices, is a kind of compound full-control type voltage driven type power electronic device that occurs last century Mo.It rolls into one the advantage of GTR and MOSFET: input impedance is high, and switching frequency is high, and operating current is large etc., and in frequency converter, Switching Power Supply, the fields such as Arc Welding Power are used widely.Meanwhile, in application, the fail safe of IGBT work is also had higher requirement.This just needs the IGBT drive circuit can safe and stable operation, and when the electric current by IGBT surpasses its rated current, can with interior grid voltage be down to safety value at 10us, requiring simultaneously grid voltage to turn-off has certain slope, prevents that this moment, excessive di/dt caused that the direct voltage transition punctures IGBT.
Summary of the invention
Technical problem to be solved by this invention is, a kind of IGBT drive circuit with the protection time-delay is provided, first, slowly when the IGBT overcurrent fall gate drive voltage, in 10us, enter the safety operation area.The second, when detecting the IGBT overcurrent,
Have certain protection time-delay, detect voltage fluctuation with the Vce that avoids causing when IGBT opens.
In order to solve the problems of the technologies described above, the present invention has adopted following technical scheme.
A kind of IGBT drive circuit with the protection time-delay, it is characterized in that: comprise that former limit is connected connecting the power amplification output circuit of IGBT with output for the driving optocoupler that connects controller, wherein the input of power amplification output circuit connects the secondary that drives optocoupler; Also comprise being connected to the signal input state circuit that drives between optocoupler and the power amplification output circuit, the Vce that is connected with signal input state circuit moves back saturation detection circuit; Also comprise driving and fall the grid voltage circuit between optocoupler and the power amplification output circuit; Also comprise and the fault-signal output circuit that falls the grid voltage circuit and be connected; Also comprise respectively and move back saturation detection circuit with Vce, fall the delay circuit that protects that grid voltage circuit and fault-signal output circuit be connected.
The output that drives optocoupler connects the push-pull amplifier circuit that is comprised of triode VT1 and triode VT2, and the output of push-pull amplifier circuit is connected with the resistance R G that drives resistance as grid; The output that drives optocoupler is also received first node by resistance R 15, Vce voltage detecting end pin process resistance R 14, and diode VD10, voltage-stabiliser tube Z2 also receives first node b; Resistance R 13 and capacitor C 1 are received respectively between the base stage and emitter of triode VT7, the collector electrode of triode VT7 is linked Section Point by resistance R 11, Section Point connects power supply ground VEE, and process resistance R 12 is linked triode VT5 base stage, the collector electrode of triode VT5 meets power supply ground VEE, emitter meets power supply VCC through resistance R 8, and process resistance R 9 is linked the 3rd node, the 3rd node meets power supply ground VEE through resistance R 10 and capacitor C 2 successively, connects by diode VD12 between the output of the 3rd node and driving optocoupler.
Section Point connects the former limit of fault output optocoupler PC3 light-emitting diodes tube cathode by resistance R 94.
Section Point is connected with resistance R by LED 5 and is connected power supply VCC.
Described driving optocoupler is selected the high-speed isolated optocoupler.
Good effect of the present invention is: the first, fall the grid voltage circuit operation behind the IGBT overcurrent, the dc voltage fluctuation of having avoided quick shutoff IGBT to cause has effectively been protected IGBT.The second, adjustable protection time-delay has been avoided IGBT switch moment to the interference of circuit, can avoid the protective circuit misoperation.The 3rd; after successfully carrying out the IGBT overcurrent protection; the safe overcurrent that this circuit can allow at IGBT is after the time interval; automatically realize that the drive circuit internal logic resets; when receiving that IGBT opens signal; circuit can work, and has removed the trouble that equipment after the IGBT overcurrent protection needs hand-reset from, and the drive circuit that is particularly useful for unattended operation equipment is used.The 4th, drive circuit involved in the present invention adopts discrete component to build, and cost is extremely low, takes up room little and has soft grid voltage and the self-recovering function of falling concurrently, especially is fit to the strict frequency converter field of cost requirement.
Description of drawings
Fig. 1 is circuit theory diagrams of the present invention.
Embodiment
Describe the operation principle of circuit of the present invention in detail below in conjunction with drawings and Examples.
Such as Fig. 1, the present invention includes former limit is connected connecting IGBT with output for the driving optocoupler U1 that connects controller power amplification output circuit, wherein the input of power amplification output circuit connects the secondary that drives optocoupler U1.
The present invention also comprises the signal input state circuit that is connected between driving optocoupler U1 and the power amplification output circuit, and the Vce that is connected with signal input state circuit moves back saturation detection circuit.The present invention also comprises driving and falls the grid voltage circuit between optocoupler U1 and the power amplification output circuit.The present invention also comprises and the fault-signal output circuit that falls the grid voltage circuit and be connected.The present invention also comprises respectively and moves back saturation detection circuit with Vce, falls the delay circuit that protects that grid voltage circuit and fault-signal output circuit be connected.
Described driving optocoupler U1 selects the high-speed isolated optocoupler.The push-pull amplifier circuit that described power amplification output circuit selects NPN and PNP triode to consist of is to improve the ability of output driving current; Select the collector electrode of triode to allow electric current by change, can adapt to the driving requirement of different I GBT.Described signal input state circuit provides enable signal for Vce moves back saturation detection circuit, begins to detect the Vce magnitude of voltage when IGBT opens.
Described Vce moves back saturation detection circuit and comprises a voltage-stabiliser tube and a current-limiting resistance, delivers to the protection delay circuit after Vce voltage is raised.Described protection delay circuit mainly is made of the PNP triode, by regulating the fine-tuning protection delay time of capacitance between base stage and emitter.The described grid voltage circuit that falls is by resistance, and electric capacity and triode form, and utilizes the time-delay control driving voltage slow decreasing of capacitor discharge.Described fault-signal output circuit comprises an isolation optocoupler, is used for the output overcurrent signal to controller.
VCC and VEE are respectively supply voltage and reference ground among Fig. 1, and pressure reduction is 25V usually, and the emitter voltage of IGBT is got 10V.U2 represents IGBT, for introducing device, in order to the circuit working principle to be described.
The pulse signal that sends from controller is by former limit 3,4 pins of high-speed isolated optocoupler U1, control optical coupling secondary edges 6 pin level.6 pins connect the push-pull amplifier circuit that is comprised of triode VT1 and triode VT2, recommend output and connect the IGBT grid through the resistance R G that drives resistance as grid.6 pins are received first node b by resistance R 15, Vce voltage detecting end 1DET pin process resistance R 14, and diode VD10, voltage-stabiliser tube Z2 also receives first node b, the switch of control PNP triode VT7.
Resistance R 13 and capacitor C 1 are received respectively between the base stage and emitter of triode VT7, the collector electrode of triode VT7 is linked Section Point d by resistance R 11, Section Point d connects power supply ground VEE, and process resistance R 12 is linked triode VT5 base stage, the collector electrode of triode VT5 meets power supply ground VEE, emitter meets power supply VCC through resistance R 8, and process resistance R 9 is linked the 3rd node h, the 3rd node h meets power supply ground VEE through resistance R 10 and capacitor C 2 successively, connects by diode VD12 between the 3rd node h and 6 pins.
Section Point d connects the former limit of fault output optocoupler PC3 light-emitting diodes tube cathode by resistance R 94, and fault output optocoupler PC3 secondary output signal is used for connecing controller.
Section Point d also is connected with resistance R by LED 5 and is connected power supply VCC.
When the secondary conducting of high-speed isolated optocoupler U1, secondary 6 pin voltage of high-speed isolated optocoupler U1 are 0V, and control IGBT turn-offs; This moment, first node b voltage depended on resistance R 13 and resistance R 15 dividing potential drops, triode VT7 conducting, and Section Point d is near 25V, and triode VT5 turn-offs, and the 3rd node h is 25V, and this moment, capacitor C 2 two ends were 25V.
1, turn-off when optical coupling secondary edges, 6 pins are output as 25V, and namely the 4th node f voltage rises to 25V.Triode VT1 conducting, through resistance R G control IGBT conducting, this moment, the Vce of IGBT descended.Because the existence of capacitor C 1, when the rising of the 4th node f voltage, first node b voltage can not suddenly change, and after the time-delay about 2us, first node b voltage is by 1DET pin and voltage-stabiliser tube Z2 control.When the IGBT electric current was low, first node b voltage was lower than 25V, and triode VT7 keeps conducting, Section Point d output low level, the former not conducting of limit of PC3 optocoupler.
2, if overcurrent occurs this moment, Vce voltage rises, after the electric capacity time-delay through 2us, if first node b voltage is higher than the minimum conducting voltage of VT7, triode VT7 turn-offs, Section Point d voltage is 0, the VT5 conducting is R9 and R10 dividing potential drop at moment the 4th node f voltage of opening, and is about 21V, be IGBT gate drive voltage moment to be pulled down to 11V from 15V, thus with the current limit of IGBT in the safety value scope.After this capacitor C 2 is pulled down to the 4th node f voltage near 0V in 4-6uf by R9 and R10 discharge.Section Point d voltage is that 0, PC3 conducting output overcurrent signal is to controller simultaneously.
If 3 controllers block driving pulse, then optical coupling secondary edges conducting is in the 4th node f drops to 0 process, IGBT turn-offs, first node b voltage depends on resistance R 13 and resistance R 15 dividing potential drops again, triode VT7 conducting, and Section Point d voltage raises, triode VT5 turn-offs, power supply is by resistance R 8, and resistance R 9, resistance R 10 slowly give capacitor C 2 chargings, approximately about 2ms, it is normal that interior circuit recovers process.If this moment, the U1 secondary turn-offed, but the IGBT normally if again detect overcurrent, repeats above-mentioned action.
If 4 controllers do not block driving pulse, then optical coupling secondary edges keeps turn-offing, and power supply VCC passes through resistance R 5, diode VD12, and resistance R 10 gives capacitor C 2 chargings, and the 4th node f voltage raises, triode VT1 conducting, IGBT is conducting again.If this moment, overcurrent disappeared, triode VT7 conducting, interior circuit normal operation, that realizes circuit exempts from the hand-reset self-starting.If over-current phenomenon avoidance still exists, triode VT7 turn-offs, repetitive process 2.
Claims (5)
1. IGBT drive circuit with protection time-delay, it is characterized in that: comprise that former limit is connected connecting the power amplification output circuit of IGBT with output for the driving optocoupler (U1) that connects controller, wherein the input of power amplification output circuit connects the secondary that drives optocoupler (U1); Also comprise being connected to the signal input state circuit that drives between optocoupler (U1) and the power amplification output circuit, the Vce that is connected with signal input state circuit moves back saturation detection circuit; Also comprise driving and fall the grid voltage circuit between optocoupler (U1) and the power amplification output circuit; Also comprise and the fault-signal output circuit that falls the grid voltage circuit and be connected; Also comprise respectively and move back saturation detection circuit with Vce, fall the delay circuit that protects that grid voltage circuit and fault-signal output circuit be connected.
2. band as claimed in claim 1 is protected the IGBT drive circuit of time-delay, it is characterized in that: the output that drives optocoupler (U1) connects the push-pull amplifier circuit that is comprised of triode VT1 and triode VT2, and the output of push-pull amplifier circuit is connected with the resistance R G that drives resistance as grid; The output that drives optocoupler (U1) is also received first node (b) by resistance R 15, Vce voltage detecting end (1DET) pin process resistance R 14, and diode VD10, voltage-stabiliser tube Z2 also receives first node b; Resistance R 13 and capacitor C 1 are received respectively between the base stage and emitter of triode VT7, the collector electrode of triode VT7 is linked Section Point (d) by resistance R 11, Section Point (d) connects power supply ground VEE, and process resistance R 12 is linked triode VT5 base stage, the collector electrode of triode VT5 meets power supply ground VEE, emitter meets power supply VCC through resistance R 8, and process resistance R 9 is linked the 3rd node (h), the 3rd node (h) meets power supply ground VEE through resistance R 10 and capacitor C 2 successively, connects by diode VD12 between the output of the 3rd node (h) and driving optocoupler (U1).
3. band as claimed in claim 2 is protected the IGBT drive circuit of time-delay, it is characterized in that: Section Point (d) connects the former limit of fault output optocoupler PC3 light-emitting diodes tube cathode by resistance R 94.
4. the IGBT drive circuit of band as claimed in claim 2 protection time-delay is characterized in that: Section Point (d) is connected with resistance R by LED 5 and is connected power supply VCC.
5. as claimed in claim 1 or 2 or 3 or 4 the IGBT drive circuit of band protection time-delay, it is characterized in that: described driving optocoupler (U1) is selected the high-speed isolated optocoupler.
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| CN2013102407855A CN103326547A (en) | 2013-06-18 | 2013-06-18 | IGBT drive circuit with protection time delay |
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| CN2013102407855A CN103326547A (en) | 2013-06-18 | 2013-06-18 | IGBT drive circuit with protection time delay |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104935315A (en) * | 2015-07-15 | 2015-09-23 | 北京京东方能源科技有限公司 | Igbt drive circuit |
| CN105245090A (en) * | 2015-11-11 | 2016-01-13 | 重庆理工大学 | Drive circuit, based on infrared isolation communication, of switch type power conversion module |
| CN105522256A (en) * | 2016-01-25 | 2016-04-27 | 上海威特力焊接设备制造股份有限公司 | IGBT protection circuit and method for alternate current argon arc welding machine |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN105811942A (en) * | 2014-12-30 | 2016-07-27 | 国家电网公司 | MOSFET driving circuit having over-current protection function and application method thereof |
| CN106230414A (en) * | 2016-08-29 | 2016-12-14 | 成都信息工程大学 | A kind of MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation |
| CN108233687A (en) * | 2018-03-13 | 2018-06-29 | 南京双启新能源科技有限公司 | It is a kind of to insert type IGBT half-bridge special purpose drivers |
| CN108880222A (en) * | 2018-07-19 | 2018-11-23 | 杭州百隆电子有限公司 | A kind of the protection circuit and push-pull output circuit of switch element |
| CN108880202A (en) * | 2018-07-05 | 2018-11-23 | 广州视源电子科技股份有限公司 | Drive circuit and variable frequency power supply |
| CN109166689A (en) * | 2018-09-26 | 2019-01-08 | 浙江众邦机电科技有限公司 | A kind of high-speed isolated driving circuit, solenoid driver circuit system |
| CN110233568A (en) * | 2018-03-05 | 2019-09-13 | 富士电机株式会社 | Gate driving circuit |
| CN110501555A (en) * | 2019-08-22 | 2019-11-26 | 江阴市六和智能设备有限公司 | A kind of parallel IGBT delay current foldback circuit based on saturation voltage drop detection |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5210479A (en) * | 1988-08-12 | 1993-05-11 | Hitachi, Ltd. | Drive circuit for an insulated gate transistor having overcurrent detecting and adjusting circuits |
| JPH11284498A (en) * | 1998-03-27 | 1999-10-15 | Sansha Electric Mfg Co Ltd | Drive device for igbt |
| CN201533295U (en) * | 2009-10-21 | 2010-07-21 | 深圳市麦格米特驱动技术有限公司 | IGBT drive and protection circuit |
| CN102315632A (en) * | 2011-10-14 | 2012-01-11 | 广东易事特电源股份有限公司 | Driving circuit for inhibiting over current of IGBT (Insulated Gate Bipolar Transistor) |
| CN203278624U (en) * | 2013-06-18 | 2013-11-06 | 欧瑞传动电气股份有限公司 | IGBT drive circuit with protection time-delay |
-
2013
- 2013-06-18 CN CN2013102407855A patent/CN103326547A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5210479A (en) * | 1988-08-12 | 1993-05-11 | Hitachi, Ltd. | Drive circuit for an insulated gate transistor having overcurrent detecting and adjusting circuits |
| JPH11284498A (en) * | 1998-03-27 | 1999-10-15 | Sansha Electric Mfg Co Ltd | Drive device for igbt |
| CN201533295U (en) * | 2009-10-21 | 2010-07-21 | 深圳市麦格米特驱动技术有限公司 | IGBT drive and protection circuit |
| CN102315632A (en) * | 2011-10-14 | 2012-01-11 | 广东易事特电源股份有限公司 | Driving circuit for inhibiting over current of IGBT (Insulated Gate Bipolar Transistor) |
| CN203278624U (en) * | 2013-06-18 | 2013-11-06 | 欧瑞传动电气股份有限公司 | IGBT drive circuit with protection time-delay |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811942A (en) * | 2014-12-30 | 2016-07-27 | 国家电网公司 | MOSFET driving circuit having over-current protection function and application method thereof |
| CN105811942B (en) * | 2014-12-30 | 2019-07-12 | 国家电网公司 | A kind of MOSFET driving circuit and its application method with overcurrent protection function |
| US9960766B2 (en) | 2015-07-15 | 2018-05-01 | Boe Technology Group Co., Ltd. | Insulated gate bipolar transistor driving circuit |
| WO2017008441A1 (en) * | 2015-07-15 | 2017-01-19 | 京东方科技集团股份有限公司 | Insulated gate bipolar transistor (igbt) drive circuit |
| CN104935315A (en) * | 2015-07-15 | 2015-09-23 | 北京京东方能源科技有限公司 | Igbt drive circuit |
| CN105245090A (en) * | 2015-11-11 | 2016-01-13 | 重庆理工大学 | Drive circuit, based on infrared isolation communication, of switch type power conversion module |
| CN105522256A (en) * | 2016-01-25 | 2016-04-27 | 上海威特力焊接设备制造股份有限公司 | IGBT protection circuit and method for alternate current argon arc welding machine |
| CN105790554B (en) * | 2016-04-06 | 2018-02-06 | 杭州电子科技大学 | A kind of IGBT drive circuit and control method with dual resisteance |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN106230414A (en) * | 2016-08-29 | 2016-12-14 | 成都信息工程大学 | A kind of MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation |
| CN106230414B (en) * | 2016-08-29 | 2023-03-24 | 成都信息工程大学 | MOSFET/IGBT high-speed drive circuit based on linear optical coupling isolation |
| CN110233568B (en) * | 2018-03-05 | 2023-09-26 | 富士电机株式会社 | Gate driving circuit |
| CN110233568A (en) * | 2018-03-05 | 2019-09-13 | 富士电机株式会社 | Gate driving circuit |
| CN108233687A (en) * | 2018-03-13 | 2018-06-29 | 南京双启新能源科技有限公司 | It is a kind of to insert type IGBT half-bridge special purpose drivers |
| CN108233687B (en) * | 2018-03-13 | 2023-11-21 | 南京双启新能源科技有限公司 | Plug-in IGBT half-bridge special driver |
| CN108880202A (en) * | 2018-07-05 | 2018-11-23 | 广州视源电子科技股份有限公司 | Drive circuit and variable frequency power supply |
| CN108880222A (en) * | 2018-07-19 | 2018-11-23 | 杭州百隆电子有限公司 | A kind of the protection circuit and push-pull output circuit of switch element |
| CN108880222B (en) * | 2018-07-19 | 2024-03-22 | 杭州百隆电子有限公司 | Protection circuit and push-pull output circuit of switching element |
| CN109166689A (en) * | 2018-09-26 | 2019-01-08 | 浙江众邦机电科技有限公司 | A kind of high-speed isolated driving circuit, solenoid driver circuit system |
| CN110501555A (en) * | 2019-08-22 | 2019-11-26 | 江阴市六和智能设备有限公司 | A kind of parallel IGBT delay current foldback circuit based on saturation voltage drop detection |
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Application publication date: 20130925 |