CN203166490U - IGBT (Insulated Gate Bipolar Transistor) over-current protection device - Google Patents
IGBT (Insulated Gate Bipolar Transistor) over-current protection device Download PDFInfo
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- CN203166490U CN203166490U CN 201320147986 CN201320147986U CN203166490U CN 203166490 U CN203166490 U CN 203166490U CN 201320147986 CN201320147986 CN 201320147986 CN 201320147986 U CN201320147986 U CN 201320147986U CN 203166490 U CN203166490 U CN 203166490U
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Abstract
The utility model discloses an IGBT over-current protection device, which comprises a control box and an over-current protection circuit fixed inside the control box. The over-current protection circuit comprises an input signal isolation circuit, a switch circuit, an IGBT collector-emitter voltage Vce sampling circuit, a slow turn-off circuit, a pulse power amplification circuit, a fault signal output circuit and an insulated gate bipolar transistor IGBT. By adopting the above-mentioned technical scheme, the IGBT over-current protection device can make the IGBT normally conducted and closed when the collector current of the IGBT is within a set range. The fault signal output circuit outputs a high level. Once the IGBT suffers an over-current, the protection circuit then functions and makes the IGBT disconnected in a timely manner. The IGBT is thus effectively prevented from suffering over-current damage. The working stability of the IGBT is improved.
Description
Technical field
The utility model relates to circuit protection device, relates in particular to a kind of insulated door gated transistors overcurrent protective device with overcurrent protection function.
Background technology
Insulation gate pole bipolar transistor (Isolated Gate Bipolar Transistor) is called for short IGBT, is also referred to as the insulated door gated transistors.Owing to have parasitic thyristor in the insulated door gated transistors, so also can be referred to as the insulation p gate thyristor, it is 20th century a kind of NEW TYPE OF COMPOSITE devices of growing up of the mid-80.Because it rolls into one the advantage of MOSFET and GTR, input impedance height, speed are fast so it has, Heat stability is good and the simple advantage of drive circuit, has low, the withstand voltage high advantage of on state voltage again, therefore development is very fast, enjoy great popularity, in power electronic equipments such as Electric Machine Control, Electric Drive, high power switching power supply, inverter, the insulated door gated transistors has become desirable power device.Yet in use; the designer often only pays attention to the design of major loop and buffer circuit; the insulated door gated transistors drives and the design of overcurrent protective device and ignored; even also there are defectives such as the overcurrent protection threshold value is too high, false overcurrent in design in some integrated insulated door gated transistors driver modules such as EXB841, the device damage that causes the insulated door gated transistors to puncture and control easily.
Summary of the invention
The purpose of this utility model is to provide a kind of insulated door gated transistors overcurrent protective device; this device has overcome the defective of existing discrete insulated door gated transistors circuit; when insulated door gated transistors overcurrent; protective circuit works; turn-off the insulated door gated transistors timely; prevent that insulated door gated transistors overcurrent from damaging, and improved the stability of insulated door gated transistors work.
For achieving the above object, a kind of insulated door gated transistors of the utility model overcurrent protective device, comprise control cabinet and be fixed on the interior current foldback circuit of control cabinet, described current foldback circuit comprises the input signal buffer circuit, switching circuit, insulated door gated transistors collector emitter voltage Vce sample circuit, slow breaking circuit, pulse power amplifier circuit and insulated door gated transistors IGBT, insulated door gated transistors IGBT is connected with pulse power amplifier circuit by resistance R6, it is characterized in that: this current foldback circuit also comprises the fault-signal output circuit, described fault-signal output circuit is by the fault distinguishing circuit, fault output delay circuit and fault holding circuit are formed, the input of fault distinguishing circuit links to each other with the collector electrode of triode Q5, the input of fault output delay circuit is received in the output of fault distinguishing circuit, and the output of fault output delay circuit is received the input of fault holding circuit; The fault distinguishing circuit is made up of resistance R 9, resistance R 10, resistance R 11, resistance R 12 and voltage comparator LM339A, positive supply VCC and resistance R 9, resistance R 12 are connected in series to successively with reference to ground GND, resistance R 9 and resistance R 12 tie points are linked 5 pin of comparator LM339A, 12 pin of comparator LM339A link to each other with reference ground GND, 3 pin of LM339A link to each other with positive source VCC, resistance R 11 1 ends link to each other with comparator LM339A output pin 2 pin, and the R11 other end is connected to voltage-stabiliser tube Z2 negative electrode; Fault output delay circuit is made of capacitor C 4, voltage stabilizing didoe Z2, triode Q7, resistance R 13, capacitor C 4 one ends are connected to voltage stabilizing didoe Z2 negative electrode, the other end of C4 links to each other with reference ground GND, voltage stabilizing didoe Z2 anode links to each other with triode Q7 base stage, triode Q7 emitter is connected to reference to ground GND through resistance R 13, and the Q7 collector electrode links to each other with positive supply VCC; The fault holding circuit is made of resistance R 8, capacitor C 3 and d type flip flop 74LS74, positive supply VCC is connected to reference to ground GND through resistance R 8, capacitor C 3, d type flip flop 74L,S74 2 pin link to each other with power supply ground GND, 3 pin link to each other with triode Q7 emitter, 1 pin of 74LS74 links to each other with positive supply VCC, and 5 pin are output signal.
In above-mentioned technical scheme, if overcurrent appears in collector electrode when insulated door gated transistors IGBT conducting, collector and emitter voltage will raise, reach about 7V, this moment, diode D1 ended, and the voltage on the capacitor C 1 raises gradually, voltage stabilizing didoe Z1 conducting when voltage is elevated to the 13V left and right sides, and then triode Q5 conducting, capacitor C 2 discharge into negative supply VL voltage gradually, the soft shutoff when this process has namely realized insulated door gated transistors IGBT overcurrent.When insulated door gated transistors IGBT normally and shutoff; the voltage of the voltage comparator LM339A end of oppisite phase in the fault distinguishing circuit is higher than the voltage of in-phase end all the time; the output of voltage comparator is always low level; d type flip flop 74LS74 is output as high level; in case overcurrent appears in insulated door gated transistors IGBT; the in-phase end voltage of LM339A is higher than end of oppisite phase voltage; comparator output high level; if the time too short (normally a few us) that high level continues; voltage stabilizing didoe Z2 in the fault output delay circuit can conducting; judge whether it is false over-current signal with this; if the time that high level continues surpasses the then Z2 conducting of 7 microseconds; trigger 74LS74 output in the fault holding circuit has high to low level saltus step; namely there is a trailing edge to arrive; trailing edge can be used as the triggering signal of microprocessor external interrupt; close insulated door gated transistors IGBT; protected insulated door gated transistors IGBT effectively; prevented that insulated door gated transistors IGBT is breakdown, improved the stable IGBT of insulated door gated transistors work.
Description of drawings
Fig. 1 is the structural representation of a kind of insulated door gated transistors of the utility model overcurrent protective device;
Fig. 2 is the circuit theory diagrams of current foldback circuit in a kind of insulated door gated transistors of the utility model overcurrent protective device.
Embodiment
Below in conjunction with accompanying drawing a kind of insulated door gated transistors of the utility model overcurrent protective device is described in further detail.
As Fig. 1; shown in Figure 2; present embodiment comprises control cabinet 1 and the current foldback circuit that is fixed in the control cabinet 1; current foldback circuit comprises input signal buffer circuit 2; switching circuit 3; insulated door gated transistors collector emitter voltage Vce sample circuit 4; slow breaking circuit 5; pulse power amplifier circuit 6 and insulated door gated transistors IGBT; insulated door gated transistors IGBT is connected with pulse power amplifier circuit 6 by resistance R6; this current foldback circuit also comprises the fault-signal output circuit, and the fault-signal output circuit is by fault distinguishing circuit 7; fault output delay circuit 8 and fault holding circuit 9 are formed.
In the present embodiment, as seen from Figure 2: one road positive-negative power, positive supply VH is with reference to ground VM, negative supply VL; No. one control circuit working power, positive supply VCC, reference ground GND.
Input signal buffer circuit 2 is made up of a high speed photo coupling 6N137, and 4 pin of 6N137 link to each other with triode Q3 base stage in the switching circuit 3, and 3 pin of 6N137 meet negative supply VL.
Switching circuit 3 is to be made of resistance R 4, resistance R 5, triode Q6 and resistance R 1, triode Q3, positive supply VH is connected to triode Q6 collector electrode through resistance R 5, resistance R 4 one ends link to each other with positive supply VH, the R4 other end links to each other with triode Q6 base stage, triode Q6 emitter is linked negative supply VL, positive supply VH links to each other with triode Q3 collector electrode through resistance R 1, and triode Q3 emitter is received negative supply VL.
Insulated door gated transistors collector emitter voltage Vce sample circuit 4 is made up of capacitor C 1, resistance R 7, resistance R 3, diode D1, voltage stabilizing didoe Z1, capacitor C 1 is connected between the collector and emitter of triode Q6, resistance R 7 one terminates to voltage stabilizing didoe Z1 negative electrode, other one terminates to triode Q6 collector electrode, voltage stabilizing didoe Z1 anode links to each other with triode Q5 base stage, resistance R 3 one ends link to each other with diode D1 anode, the other end is connected to the negative electrode of voltage stabilizing didoe Z1, and diode D1 negative electrode links to each other with insulated door gated transistors collector electrode.
Slow breaking circuit 5 is made up of triode Q5, resistance R 2, resistance R 1, diode D2 and capacitor C 2, positive supply VH links to each other with triode Q5 collector electrode through resistance R 2, the Q5 emitter is received negative supply VL, resistance R 1 one ends are connected to positive supply VH, the other end links to each other with triode Q1 base stage, diode D2 anode is connected to triode Q1 base stage, and diode D2 negative electrode is connected to triode Q5 collector electrode, and capacitor C 2 is attempted by between the collector and emitter of triode Q5.
Pulse power amplifier circuit 6 is made up of triode Q1 and triode Q4, triode Q1 is NPN type triode, triode Q4 is the positive-negative-positive triode, triode Q1 base stage links to each other with triode Q4 base stage, the Q1 emitter links to each other with the Q4 emitter, and the Q1 base stage is linked triode Q3 collector electrode, and the Q1 collector electrode is linked positive supply VH, the Q4 collector electrode is received negative supply VL, and the Q4 emitter links to each other with grid resistance R6.
The fault-signal output circuit comprises the fault distinguishing circuit, fault output delay circuit and fault holding circuit, the fault distinguishing circuit is by resistance R 9, resistance R 10, resistance R 11, resistance R 12 and voltage comparator LM339A form, positive supply VCC and resistance R 9, resistance R 12 is connected in series to successively with reference to ground GND, resistance R 9 and resistance R 12 tie points are linked 5 pin of comparator LM339A, comparator LM339A 12 pin link to each other with reference ground GND, LM339A 3 pin link to each other with positive source VCC, resistance R 11 1 ends link to each other with comparator LM339A output pin 2 pin, the R11 other end is connected to voltage-stabiliser tube Z2 negative electrode, fault output delay circuit is by capacitor C 4, voltage stabilizing didoe Z2, triode Q7, resistance R 13 constitutes, capacitor C 4 one ends are connected to voltage stabilizing didoe Z2 negative electrode, the other end of C4 links to each other with reference ground GND, voltage stabilizing didoe Z2 anode links to each other with triode Q7 base stage, triode Q7 emitter is connected to reference to ground GND through resistance R 13, the Q7 collector electrode links to each other with positive supply VCC, the fault holding circuit is by resistance R 8, capacitor C 3 and d type flip flop 74LS74 constitute, positive supply VCC is through resistance R 8, capacitor C 3 is connected to reference to ground GND, d type flip flop 74L,S74 2 pin link to each other with power supply ground GND, 3 pin link to each other with triode Q7 emitter, 1 pin of 74LS74 links to each other with positive supply VCC, and 5 pin are output signal.
In the present embodiment:
(1), during insulated door gated transistors IGBT normally state: when having electric current about about 10mA to flow through on the input side light-emitting diode of high speed photo coupling 6N137, the phototriode conducting of high speed photo coupling 6N137 outlet side.Switching tube Q3 and Q6 in the switching circuit is in cut-off state at this moment, because ending of Q6 makes capacitor C 1 charge, the charging voltage on the capacitor C 1 is determined by resistance R 5, resistance R 7 and resistance R 3.During normally, about about 2.5V, the diode D1 of this moment is conducting to the voltage of insulated door gated transistors IGBT collector and emitter greatly.Because the ending of triode Q3, the current potential of Q3 collector electrode is near the voltage of positive supply VH, the triode Q1 conducting in this moment power amplification circuit, and Q4 ends, insulated door gated transistors IGBT normally.Meanwhile, through resistance R 1, diode D2 charging, last charging voltage is approximately the voltage of positive supply VH to capacitor C 2 by positive supply VH.During insulated door gated transistors IGBT normally, the output 5 pin output high level in the fault holding circuit 9.
(2), during insulated door gated transistors IGBT normal turn-off state: when high speed 6N137 optocoupler input side no current flows through, the phototriode of optocoupler outlet side ends, triode Q3 in the switching circuit 3 and Q6 saturation conduction, capacitor C 1 discharge this moment, discharge back voltage is near negative supply VL voltage.In addition, voltage stabilizing didoe Z1, the diode D1 in the insulated door gated transistors collector emitter voltage Vce voltage sampling circuit 4 and the triode Q5 of power amplification circuit 6 all end, insulated door gated transistors IGBT normal turn-off.During insulated door gated transistors IGBT normal turn-off, the output 5 pin output high level in the fault holding circuit 9.
(3) insulated door gated transistors IGBT overcurrent protection state: if overcurrent appears in collector electrode when insulated door gated transistors IGBT conducting; collector and emitter voltage will raise; reach about 7V; this moment, diode D1 ended; voltage on the capacitor C 1 raises gradually, voltage stabilizing didoe Z1 conducting, and then triode Q5 conducting when voltage is elevated to the 13V left and right sides; capacitor C 2 discharges into negative supply VL voltage gradually, the soft shutoff when this process has namely realized insulated door gated transistors IGBT overcurrent.When insulated door gated transistors IGBT normally and shutoff, the voltage of voltage comparator LM339A end of oppisite phase is higher than the voltage of in-phase end all the time, the output of voltage comparator is always low level, d type flip flop 74LS74 is output as high level, in case overcurrent appears in insulated door gated transistors IGBT, the in-phase end voltage of LM339A is higher than end of oppisite phase voltage, comparator output high level, if the time too short (normally a few us) that high level continues, voltage stabilizing didoe Z2 can conducting, judge whether it is false over-current signal with this, if the time that high level continues surpasses then Z2 conducting of 7us, trigger 74LS74 output has high to low level saltus step, namely has a trailing edge to arrive, trailing edge can be used as the triggering signal of microprocessor external interrupt, closes insulated door gated transistors IGBT.
In the above-described embodiments, when in the scope that the collector current of insulated door gated transistors IGBT is being set, insulated door gated transistors IGBT normally and closing, fault output circuit output high level, in case overcurrent occurs among the insulated door gated transistors IGBT, slow breaking circuit action, block insulated door gated transistors IGBT and drive signal, prevent that insulated door gated transistors IGBT from puncturing because of overcurrent, simultaneous faults output circuit output low level, this low level can be used as the triggering signal of microprocessor external interrupt, so that microprocessor can in time be handled abnormal conditions.
Claims (1)
1. insulated door gated transistors overcurrent protective device, comprise control cabinet and be fixed on the interior current foldback circuit of control cabinet, described current foldback circuit comprises the input signal buffer circuit, switching circuit, insulated door gated transistors collector emitter voltage Vce sample circuit, slow breaking circuit, pulse power amplifier circuit and insulated door gated transistors IGBT, insulated door gated transistors IGBT is connected with pulse power amplifier circuit by resistance R6, it is characterized in that: this current foldback circuit also comprises the fault-signal output circuit, described fault-signal output circuit is by the fault distinguishing circuit, fault output delay circuit and fault holding circuit are formed, the input of fault distinguishing circuit links to each other with the collector electrode of triode Q5, the input of fault output delay circuit is received in the output of fault distinguishing circuit, and the output of fault output delay circuit is received the input of fault holding circuit; The fault distinguishing circuit is made up of resistance R 9, resistance R 10, resistance R 11, resistance R 12 and voltage comparator LM339A, positive supply VCC and resistance R 9, resistance R 12 are connected in series to successively with reference to ground GND, resistance R 9 and resistance R 12 tie points are linked 5 pin of comparator LM339A, 12 pin of comparator LM339A link to each other with reference ground GND, 3 pin of LM339A link to each other with positive source VCC, resistance R 11 1 ends link to each other with comparator LM339A output pin 2 pin, and the R11 other end is connected to voltage-stabiliser tube Z2 negative electrode; Fault output delay circuit is made of capacitor C 4, voltage stabilizing didoe Z2, triode Q7, resistance R 13, capacitor C 4 one ends are connected to voltage stabilizing didoe Z2 negative electrode, the other end of C4 links to each other with reference ground GND, voltage stabilizing didoe Z2 anode links to each other with triode Q7 base stage, triode Q7 emitter is connected to reference to ground GND through resistance R 13, and the Q7 collector electrode links to each other with positive supply VCC; The fault holding circuit is made of resistance R 8, capacitor C 3 and d type flip flop 74LS74, positive supply VCC is connected to reference to ground GND through resistance R 8, capacitor C 3, d type flip flop 74L,S74 2 pin link to each other with power supply ground GND, 3 pin link to each other with triode Q7 emitter, 1 pin of 74LS74 links to each other with positive supply VCC, and 5 pin are output signal.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320147986 CN203166490U (en) | 2013-03-29 | 2013-03-29 | IGBT (Insulated Gate Bipolar Transistor) over-current protection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320147986 CN203166490U (en) | 2013-03-29 | 2013-03-29 | IGBT (Insulated Gate Bipolar Transistor) over-current protection device |
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| CN 201320147986 Expired - Fee Related CN203166490U (en) | 2013-03-29 | 2013-03-29 | IGBT (Insulated Gate Bipolar Transistor) over-current protection device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904622A (en) * | 2014-04-09 | 2014-07-02 | 东南大学 | IGBT overcurrent protection circuit |
| CN104659757A (en) * | 2014-12-25 | 2015-05-27 | 深圳青铜剑电力电子科技有限公司 | IGBT overvoltage protection circuit and IGBT overvoltage protection method |
| CN105098730A (en) * | 2014-04-18 | 2015-11-25 | 南京南瑞继保电气有限公司 | Device and method for detecting overcurrent of IGBT (insulated gate bipolar transistor) |
| CN106033097A (en) * | 2015-03-20 | 2016-10-19 | 佛山市顺德区美的电热电器制造有限公司 | IGBT overcurrent protection method and device and household appliance |
| CN109818599A (en) * | 2019-01-03 | 2019-05-28 | 北京交通大学 | A kind of voltage injection type SiC MOSFET active driving circuit |
| CN110336435A (en) * | 2019-06-23 | 2019-10-15 | 大国重器自动化设备(山东)股份有限公司 | A kind of Intelligent servo motor and robot |
| CN112601338A (en) * | 2020-12-10 | 2021-04-02 | 宁波公牛光电科技有限公司 | Lamp and regulating and controlling circuit thereof |
| CN113765071A (en) * | 2021-08-11 | 2021-12-07 | 深圳市德兰明海科技有限公司 | Power tube overcurrent protection circuit |
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2013
- 2013-03-29 CN CN 201320147986 patent/CN203166490U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904622A (en) * | 2014-04-09 | 2014-07-02 | 东南大学 | IGBT overcurrent protection circuit |
| CN105098730A (en) * | 2014-04-18 | 2015-11-25 | 南京南瑞继保电气有限公司 | Device and method for detecting overcurrent of IGBT (insulated gate bipolar transistor) |
| CN104659757A (en) * | 2014-12-25 | 2015-05-27 | 深圳青铜剑电力电子科技有限公司 | IGBT overvoltage protection circuit and IGBT overvoltage protection method |
| CN104659757B (en) * | 2014-12-25 | 2018-02-16 | 深圳青铜剑科技股份有限公司 | A kind of IGBT overvoltage crowbars and a kind of IGBT over-voltage protection methods |
| CN106033097A (en) * | 2015-03-20 | 2016-10-19 | 佛山市顺德区美的电热电器制造有限公司 | IGBT overcurrent protection method and device and household appliance |
| CN106033097B (en) * | 2015-03-20 | 2020-06-05 | 佛山市顺德区美的电热电器制造有限公司 | IGBT (insulated Gate Bipolar transistor) overcurrent protection method and device and household appliance |
| CN109818599A (en) * | 2019-01-03 | 2019-05-28 | 北京交通大学 | A kind of voltage injection type SiC MOSFET active driving circuit |
| CN110336435A (en) * | 2019-06-23 | 2019-10-15 | 大国重器自动化设备(山东)股份有限公司 | A kind of Intelligent servo motor and robot |
| CN110336435B (en) * | 2019-06-23 | 2024-04-19 | 大国重器自动化设备(山东)股份有限公司 | Intelligent servo motor and robot |
| CN112601338A (en) * | 2020-12-10 | 2021-04-02 | 宁波公牛光电科技有限公司 | Lamp and regulating and controlling circuit thereof |
| CN113765071A (en) * | 2021-08-11 | 2021-12-07 | 深圳市德兰明海科技有限公司 | Power tube overcurrent protection circuit |
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Granted publication date: 20130828 Termination date: 20140329 |