CN102412565A - Isolated IGBT (Insulated Gate Bipolar Transistor) driving circuit with overcurrent protection function - Google Patents
Isolated IGBT (Insulated Gate Bipolar Transistor) driving circuit with overcurrent protection function Download PDFInfo
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- CN102412565A CN102412565A CN2011103721802A CN201110372180A CN102412565A CN 102412565 A CN102412565 A CN 102412565A CN 2011103721802 A CN2011103721802 A CN 2011103721802A CN 201110372180 A CN201110372180 A CN 201110372180A CN 102412565 A CN102412565 A CN 102412565A
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Abstract
The invention discloses an isolated IGBT (Insulated Gate Bipolar Transistor) driving circuit with an overcurrent protection function. The driving circuit comprises an RS latch, a switch-on circuit, a switch-off circuit, an optical coupler and an overcurrent protection circuit, wherein the RS latch comprises two negative and gates; one end of the switch-on circuit is connected with a driving signal through the optical coupler, and the other end of the switch-on circuit is connected with the grid of an IGBT; the G-E end voltage clamp of the IGBT is at +15V for switching the IGBT on rapidly; the switch-off circuit is connected with the source of the IGBT; the G-E end voltage clamp of the IGBT is at -5V for switching the IGBT off quickly; the overcurrent protection circuit is connected with the drain of the IGBT; and the RS latch is connected with the optical coupler, so that the optical coupler is always in the conducting state. Due to the adoption of the way, the IGBT can be switched off immediately when the circuit is under overcurrent, the IGBT is prevented from being damaged, and the driving circuit is protected effectively.
Description
Technical field
The present invention relates to electronic technology field, particularly relate to a kind of isolated IGBT drive circuit with overcurrent protection function.
Background technology
Insulation gate pole bipolar transistor IGBT is 20th century a kind of NEW TYPE OF COMPOSITE devices of growing up of the mid-80; Because the advantage of MOSFET and GTR is rolled into one; Input impedance height, speed were fast so it had both had, Heat stability is good and the simple advantage of drive circuit; Have low, the withstand voltage highland of on state voltage advantage again, therefore development is very fast, is favourably welcome; In electron electric power devices such as Electric Machine Control, Electric Drive, high power switching power supply, inverter, IGBT has become desirable power device.
Yet in its use, often there is not current foldback circuit in the drive circuit, when in the circuit during overcurrent; Can not turn-off IGBT timely; Make circuit cause IGBT to damage because of overcurrent, so circuit do not have overcurrent protection function, can not play protective circuit and work.
Summary of the invention
The technical problem that the present invention mainly solves provides a kind of isolated IGBT drive circuit with overcurrent protection function, can have overcurrent protection function, and when overcurrent, protective circuit works, and turn-offs IGBT timely, prevents that IGBT from damaging.
For solving the problems of the technologies described above; The technical scheme that the present invention adopts is: a kind of isolated IGBT drive circuit with overcurrent protection function is provided, comprises: the RS latch, open circuit, breaking circuit and optocoupler, said RS latch comprises two NAND gates; Said circuit one end of opening connects drive signal through optocoupler; Another termination IGBT grid at+15V, is opened IGBT with the G-E terminal voltage clamper of IGBT fast; Said breaking circuit connects the source electrode of IGBT, and the G-E terminal voltage clamper of IGBT at-5V, is turn-offed IGBT fast; Said RS latch links to each other with optocoupler, makes optocoupler be in conducting state always.It is characterized in that; Isolated IGBT drive circuit with overcurrent protection function also comprises current foldback circuit; Current foldback circuit links to each other with the IGBT drain electrode, comprising: first voltage stabilizing didoe, second voltage stabilizing didoe, the 3rd voltage stabilizing didoe, a NPN transistor, the 2nd NPN transistor, first electric capacity and first diode, and the said first voltage stabilizing didoe negative pole connects the IGBT drain electrode through first diode; Positive pole connects a NPN transistor base stage; A said NPN transistor grounded emitter, collector electrode connects the IGBT grid through the 3rd voltage stabilizing didoe, and it is anodal that said the 2nd NPN transistor base stage connects second voltage stabilizing didoe; Grounded emitter, collector electrode connect the 24V single supply.
In preferred embodiment of the present invention; The said circuit of opening comprises: the 3rd NPN transistor, the 4th NPN transistor, first resistance, the 4th voltage stabilizing didoe, the 5th voltage stabilizing didoe and the 6th voltage stabilizing didoe; Said the 3rd NPN transistor base stage links to each other with optocoupler, and emitter connects the 4th NPN transistor base stage, and collector electrode and the 4th NPN transistor collector electrode connect the 24V single supply; The emitter of said the 4th NPN transistor connects the IGBT grid through first resistance; Said series connection the 4th voltage stabilizing didoe and the 5th voltage stabilizing didoe are attempted by IGBT grid and source electrode, said the 4th voltage stabilizing didoe one termination IGBT source electrode, an end ground connection.
In preferred embodiment of the present invention; Said breaking circuit comprises: the 3rd NPN transistor, a PNP transistor, second resistance and the 4th voltage stabilizing didoe; The base stage of a said PNP transistor connects optocoupler through the 3rd NPN transistor emitter; Emitter links to each other the direct ground connection of collector electrode with the 4th NPN transistor emitter.Said the 4th voltage stabilizing didoe negative pole connects 24V single supply, plus earth through second resistance.
In preferred embodiment of the present invention, be connected to a reset switch on the said RS latch, be used to restart drive circuit.
In preferred embodiment of the present invention; Said isolated IGBT drive circuit with overcurrent protection function also comprises delay circuit; Said delay circuit comprises the 3rd resistance and second electric capacity; Said the 3rd resistance and second electric capacity connect the 2nd NPN transistor base stage through second voltage stabilizing didoe, are used to make the 2nd NPN transistor remain off state under normal condition.
The invention has the beneficial effects as follows: the present invention has in the isolated IGBT drive circuit of overcurrent protection function has increased current foldback circuit; Thereby when making the circuit overcurrent; Can turn-off IGBT timely, prevent the damage of IGBT, thereby play the effect of effective protection drive circuit.
Description of drawings
Fig. 1 is the principle schematic that the present invention has the isolated IGBT drive circuit of overcurrent protection function;
The mark of each parts is following in the accompanying drawing: optocoupler U1, current foldback circuit 1, open circuit 2, breaking circuit 3, RS latch 4, delay circuit 5.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present invention is set forth in detail, thereby protection scope of the present invention is made more explicit defining so that advantage of the present invention and characteristic can be easier to it will be appreciated by those skilled in the art that.
Seeing also Fig. 1 embodiment of the invention comprises: optocoupler U1, current foldback circuit 1, open circuit 2, breaking circuit 3 and RS latch 4; Optocoupler U1 one termination drive signal; Another termination is opened circuit 2, opens circuit 2 another termination IGBT grids, and breaking circuit 3 and current foldback circuit 1 connect source electrode and the drain electrode of IGBT respectively; RS latch 4 one termination optocoupler U1, the other end links to each other with current foldback circuit.
Breaking circuit comprises: NPN transistor Q5, PNP transistor Q1, resistance R 1 and voltage stabilizing didoe D1; The base stage of PNP transistor Q1 meets optocoupler U1 through NPN transistor Q5 emitter; Emitter links to each other the direct ground connection of collector electrode with NPN transistor Q2 emitter.The first voltage stabilizing didoe negative pole meets 24V single supply Vcc through resistance R 1, plus earth, and PNP transistor Q1 and NPN transistor Q2 form push-pull amplifier circuit, have reduced the output impedance of drive circuit effectively, have improved driving force.
Current foldback circuit comprises: voltage stabilizing didoe D6, voltage stabilizing didoe D5, voltage stabilizing didoe D4, NPN transistor Q3, NPN transistor Q4, capacitor C 1 and diode D9; Voltage stabilizing didoe D6 negative pole connects the IGBT drain electrode through diode D9; Positive pole connects NPN transistor Q3 base stage; NPN transistor Q3 grounded emitter, collector electrode connects the IGBT grid through voltage stabilizing didoe D4, and it is anodal that NPN transistor Q4 base stage meets voltage stabilizing didoe D5; Grounded emitter, collector electrode meets 24V single supply Vcc through resistance R 10.
Delay circuit 5 comprises resistance R 8 and capacitor C 2, and resistance R 8 connects NPN transistor Q4 base stage with capacitor C 2 through voltage stabilizing didoe D5, is used to make NPN transistor Q4 remain off state under normal condition.
Be different from prior art, the present invention has in the isolated IGBT drive circuit of overcurrent protection function and is provided with current foldback circuit, when the circuit overcurrent, turn-offs IGBT timely, makes IGBT not be damaged, thereby entire circuit has been played overcurrent protection; In addition, this drive circuit can provide for IGBT+15V with-the 5V driving voltage is guaranteed turning on and off of IGBT, and this circuit can have the very wide scope of application according to the needs dynamic adjustments maximum current of load.
The operation principle that the present invention has the isolated IGBT drive circuit of overcurrent protection function is: under the normal condition, optocoupler U1 ends when drive signal is high level, and A point current potential is a high level; NPN transistor Q5 conducting; B point current potential is a high level, NPN transistor Q2 conducting, and PNP transistor Q1 ends; The G-E voltage of IGBT through NPN transistor Q2, resistance R 2, voltage-stabiliser tube D1, voltage-stabiliser tube D2 and voltage-stabiliser tube D3 clamper at+15V, the IGBT this moment of conducting fast.When drive signal is low level, optocoupler U1 conducting, A point current potential is a low level; NPN transistor Q5 ends, and B point current potential is a low level, and NPN transistor Q2 ends; And PNP transistor Q1 conducting, at-5V, this moment, IGBT turn-offed the G-E voltage of IGBT fast through NPN transistor Q1, resistance R 1 and voltage-stabiliser tube D1 clamper; Fast recovery diode D9 direction is turn-offed simultaneously, stops this main circuit high pressure to scurry into control loop.
When overcurrent takes place when; The voltage at the G-E two ends of IGBT raises, and this moment, fast recovery diode D9 direction was turn-offed, so the C point voltage increases with the rising of capacitor C 1 charging voltage; When over-current phenomenon avoidance continues to occur in the 1.5us left and right sides; The C point voltage makes voltage-stabiliser tube D6 conducting, NPN transistor Q3 conducting thereupon, and the G-E voltage of IGBT is reduced to about 10V.If the C point voltage returns to low-voltage again within 10us, then be false over-current phenomenon avoidance, NPN transistor Q3 ends, and circuit returns to normal operating conditions.If more than the overcurrent phenomenon time of origin 10us, then the C point voltage continues to rise, thereby makes voltage-stabiliser tube D5 conducting; NPN transistor Q4 conducting immediately, D point current potential is a low-voltage, PNP transistor Q1 conducting; Because the discharge process of capacitor C 1, so IGBT turn-offs at a slow speed, E point current potential fixes on high level through the RS latch simultaneously; High speed photo coupling is in conducting state always, makes IGBT be in reliable off state, after the overcurrent protection; Have only fault is got rid of, restart drive signal through reset switch.
The above is merely embodiments of the invention; Be not so limit claim of the present invention; Every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (7)
1. isolated IGBT drive circuit with overcurrent protection function; Comprise: the RS latch, open circuit, breaking circuit and optocoupler; Said RS latch comprises two NAND gates, and said circuit one end of opening connects drive signal through optocoupler, another termination IGBT grid; The G-E terminal voltage clamper of IGBT at+15V, is opened IGBT fast; Said breaking circuit connects the source electrode of IGBT, and the G-E terminal voltage clamper of IGBT at-5V, is turn-offed IGBT fast; Said RS latch links to each other with optocoupler, makes optocoupler be in conducting state always.
2. it is characterized in that; Isolated IGBT drive circuit with overcurrent protection function also comprises current foldback circuit; Current foldback circuit links to each other with the IGBT drain electrode, comprising: first voltage stabilizing didoe, second voltage stabilizing didoe, the 3rd voltage stabilizing didoe, a NPN transistor, the 2nd NPN transistor, first electric capacity and first diode, and the said first voltage stabilizing didoe negative pole connects the IGBT drain electrode through first diode; Positive pole connects a NPN transistor base stage; A said NPN transistor grounded emitter, collector electrode connects the IGBT grid through the 3rd voltage stabilizing didoe, and it is anodal that said the 2nd NPN transistor base stage connects second voltage stabilizing didoe; Grounded emitter, collector electrode connect the 24V single supply.
3. the isolated IGBT drive circuit with overcurrent protection function according to claim 1; It is characterized in that; The said circuit of opening comprises: the 3rd NPN transistor, the 4th NPN transistor, first resistance, the 4th voltage stabilizing didoe, the 5th voltage stabilizing didoe and the 6th voltage stabilizing didoe; Said the 3rd NPN transistor base stage links to each other with optocoupler, and emitter connects the 4th NPN transistor base stage, and collector electrode and the 4th NPN transistor collector electrode connect the 24V single supply; The emitter of said the 4th NPN transistor connects the IGBT grid through first resistance; Said series connection the 4th voltage stabilizing didoe and the 5th voltage stabilizing didoe are attempted by IGBT grid and source electrode, said the 4th voltage stabilizing didoe one termination IGBT source electrode, an end ground connection.
4. the isolated IGBT drive circuit with overcurrent protection function according to claim 1; It is characterized in that; Said breaking circuit comprises: the 3rd NPN transistor, a PNP transistor, second resistance and the 4th voltage stabilizing didoe; The base stage of a said PNP transistor connects optocoupler through the 3rd NPN transistor emitter, and emitter links to each other the direct ground connection of collector electrode with the 4th NPN transistor emitter.
5. said the 4th voltage stabilizing didoe negative pole connects 24V single supply, plus earth through second resistance.
6. the isolated IGBT drive circuit with overcurrent protection function according to claim 1 is characterized in that, is connected to a reset switch on the said RS latch, is used to restart drive circuit.
7. the isolated IGBT drive circuit with overcurrent protection function according to claim 1; It is characterized in that; Said isolated IGBT drive circuit with overcurrent protection function also comprises delay circuit; Said delay circuit comprises the 3rd resistance and second electric capacity, and said the 3rd resistance and second electric capacity connect the 2nd NPN transistor base stage through second voltage stabilizing didoe, are used to make the 2nd NPN transistor remain off state under normal condition.
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| CN2011103721802A CN102412565A (en) | 2011-11-22 | 2011-11-22 | Isolated IGBT (Insulated Gate Bipolar Transistor) driving circuit with overcurrent protection function |
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| CN2011103721802A CN102412565A (en) | 2011-11-22 | 2011-11-22 | Isolated IGBT (Insulated Gate Bipolar Transistor) driving circuit with overcurrent protection function |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769336A (en) * | 2012-08-08 | 2012-11-07 | 江苏银佳企业集团有限公司 | Single-phase inverter for emergency power supply |
| WO2015007014A1 (en) * | 2013-07-17 | 2015-01-22 | 美的集团股份有限公司 | High-frequency heating device and power supply control method and power supply control apparatus for same |
| CN105375908A (en) * | 2015-11-05 | 2016-03-02 | 北京动力源科技股份有限公司 | Middle low frequency large power tube driving circuit and electric appliance equipment having the circuit |
| CN105932647A (en) * | 2016-06-03 | 2016-09-07 | 山东大学 | High-voltage SIC device over-current detection and protection circuit, device and method |
| CN106033097A (en) * | 2015-03-20 | 2016-10-19 | 佛山市顺德区美的电热电器制造有限公司 | IGBT overcurrent protection method and device and household appliance |
| CN106602847A (en) * | 2016-12-27 | 2017-04-26 | 杭州易和网络有限公司 | Low-cost IGBT driving circuit |
| CN107306026A (en) * | 2016-04-18 | 2017-10-31 | 中惠创智无线供电技术有限公司 | IGBT passive protection circuit |
| CN108039878A (en) * | 2017-09-28 | 2018-05-15 | 长春理工大学 | Low-noise bias circuit based on the detection of IGBT low-frequency noises |
| CN109904843A (en) * | 2019-04-19 | 2019-06-18 | 闽江学院 | A kind of novel motor driven current foldback circuit and its over-current protection method |
| CN110224696A (en) * | 2019-07-11 | 2019-09-10 | 珠海格力电器股份有限公司 | Drive Protecting Circuit |
| CN110445091A (en) * | 2018-05-03 | 2019-11-12 | 北京北秦安全技术有限公司 | A kind of single-phase arc extinguishing type short-circuit protector |
| CN112636726A (en) * | 2020-12-22 | 2021-04-09 | 中国电子科技集团公司第十八研究所 | Latch reset circuit for spaceflight |
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769336B (en) * | 2012-08-08 | 2015-04-01 | 江苏银佳企业集团有限公司 | Single-phase inverter for emergency power supply |
| CN102769336A (en) * | 2012-08-08 | 2012-11-07 | 江苏银佳企业集团有限公司 | Single-phase inverter for emergency power supply |
| WO2015007014A1 (en) * | 2013-07-17 | 2015-01-22 | 美的集团股份有限公司 | High-frequency heating device and power supply control method and power supply control apparatus for same |
| JP2016525269A (en) * | 2013-07-17 | 2016-08-22 | 美的集団股▲フン▼有限公司Ｍｉｄｅａ Ｇｒｏｕｐ Ｃｏ．， Ｌｔｄ． | High frequency heater, power supply control method thereof, and power supply control apparatus |
| US10257889B2 (en) | 2013-07-17 | 2019-04-09 | Midea Group Co., Ltd. | High-frequency heating device and method and apparatus for controlling power supply of the same |
| CN106033097B (en) * | 2015-03-20 | 2020-06-05 | 佛山市顺德区美的电热电器制造有限公司 | IGBT (insulated Gate Bipolar transistor) overcurrent protection method and device and household appliance |
| CN106033097A (en) * | 2015-03-20 | 2016-10-19 | 佛山市顺德区美的电热电器制造有限公司 | IGBT overcurrent protection method and device and household appliance |
| CN105375908B (en) * | 2015-11-05 | 2019-02-15 | 北京动力源科技股份有限公司 | A kind of middle low-frequency high-power tube drive circuit and electrical equipment with the circuit |
| CN105375908A (en) * | 2015-11-05 | 2016-03-02 | 北京动力源科技股份有限公司 | Middle low frequency large power tube driving circuit and electric appliance equipment having the circuit |
| CN107306026A (en) * | 2016-04-18 | 2017-10-31 | 中惠创智无线供电技术有限公司 | IGBT passive protection circuit |
| CN107306026B (en) * | 2016-04-18 | 2019-03-29 | 中惠创智无线供电技术有限公司 | The passive protection circuit of IGBT |
| CN105932647B (en) * | 2016-06-03 | 2018-07-17 | 山东大学 | A kind of high pressure SIC devices over-current detection and protection circuit, device and method |
| CN105932647A (en) * | 2016-06-03 | 2016-09-07 | 山东大学 | High-voltage SIC device over-current detection and protection circuit, device and method |
| CN106602847A (en) * | 2016-12-27 | 2017-04-26 | 杭州易和网络有限公司 | Low-cost IGBT driving circuit |
| CN108039878A (en) * | 2017-09-28 | 2018-05-15 | 长春理工大学 | Low-noise bias circuit based on the detection of IGBT low-frequency noises |
| CN110445091A (en) * | 2018-05-03 | 2019-11-12 | 北京北秦安全技术有限公司 | A kind of single-phase arc extinguishing type short-circuit protector |
| CN109904843A (en) * | 2019-04-19 | 2019-06-18 | 闽江学院 | A kind of novel motor driven current foldback circuit and its over-current protection method |
| CN109904843B (en) * | 2019-04-19 | 2024-05-31 | 闽江学院 | Novel motor-driven overcurrent protection circuit and overcurrent protection method thereof |
| CN110224696A (en) * | 2019-07-11 | 2019-09-10 | 珠海格力电器股份有限公司 | Drive Protecting Circuit |
| CN112636726A (en) * | 2020-12-22 | 2021-04-09 | 中国电子科技集团公司第十八研究所 | Latch reset circuit for spaceflight |
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Application publication date: 20120411 |