CN105932647B - A kind of high pressure SIC devices over-current detection and protection circuit, device and method - Google Patents
A kind of high pressure SIC devices over-current detection and protection circuit, device and method Download PDFInfo
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- CN105932647B CN105932647B CN201610394900.8A CN201610394900A CN105932647B CN 105932647 B CN105932647 B CN 105932647B CN 201610394900 A CN201610394900 A CN 201610394900A CN 105932647 B CN105932647 B CN 105932647B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
- G01R19/16523—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using diodes, e.g. Zener diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
Abstract
The invention discloses a kind of high pressure SIC devices over-current detections and protection circuit, device and method; device includes high pressure SIC devices over-current detection circuit and high pressure SIC device current foldback circuits; high pressure SIC device over-current detection circuits include the drain electrode over-current detection element being connected with SIC devices to be detected, the first current limiting element being connected with the output end of the driving circuit of SIC devices to be detected；One end of second current limiting element is connected with third current limiting element, blocking element and transistor collector in turn, and one end of the second current limiting element is connected with voltage-stabiliser tube, the 4th current limiting element and transistor base in turn；Power storage element is provided between transistor base and transistor emitter；High pressure SIC device current foldback circuits; include that the switch logic signals being connected with high pressure SIC device over-current detection circuits generate unit; switch logic signals generate the conducting and shutdown that unit drives SIC devices by driving circuit; SIC devices over-current detection of the present invention and protection circuit structure are clear, realize and are easy.
Description
Technical field
The present invention relates to electronic power switch device drives to protect field, and in particular to a kind of high pressure SIC device overcurrents inspection
It surveys and protection circuit, device and method.
Background technology
Silicon carbide (SIC) MOSFET/IGBT has high pressure-temperature characteristic, with the quickening for being commercialized speed in recent years, carbon
SiClx device is increasingly by the extensive concern of industrial circle.SIC MOSFET/IGBT have ideal compared to traditional silicon-based devices
Gate insulator characteristic has faster switch performance, lower switching loss, higher stability, higher pressure resistance high temperature resistant
Characteristic.SIC MOSFET/IGBT have differences in traditional silicon substrate MOSFET/IGBT drive characteristics, are driven in use to it
It is dynamic that there is special requirement.The turning-on voltage that SIC MOSFET/IGBT recommend is+18V or more to ensure on state resistance minimum；
To ensure that its reliable turn-off, shutdown voltage are -2~-5V.Existing driving circuit can preferably solve to drive by accessory power supply
Dynamic voltage problem.
Current commercialized silicon carbide device higher price, in practice due to device aging damage, control and driving electricity
Road failure or interference etc. cause malfunction, output line wrong or insulation damages etc. to form short circuit, output end shorted to earth, bridgc arm short
Etc. causing the electric current for flowing through SIC MOSFET/IGBT to be far longer than its secure threshold, if not being effectively protected or protecting
Silicon carbide device service life will be influenced or even burn out device slowly by crossing.Therefore it is examined either from cost or from safety
Consider, is required for a kind of protection circuit being swift in motion, can be protected in time in SIC MOSFET/IGBT overcurrents/short circuit.
Invention content
To solve the shortcomings of the prior art, the invention discloses a kind of high pressure SIC devices over-current detections and protection electricity
Road, device and method can be quickly detected silicon carbide device and overcurrent condition occur, and detection speed is fast, and can be carried out to it soon
Speed protection meets and protects circuit can be to requirement that SIC devices are quickly protected in overcurrent.
To achieve the above object, concrete scheme of the invention is as follows：
A kind of high pressure SIC device over-current detection circuits include the drain electrode over-current detection member being connected with SIC devices to be detected
Part, the first current limiting element being connected with the output end of the driving circuit of SIC devices to be detected；
One end of second current limiting element is connected with third current limiting element, blocking element and transistor collector in turn, and second
One end of current limiting element is connected with voltage-stabiliser tube, the 4th current limiting element and transistor base in turn；
It is provided with power storage element between the transistor base and transistor emitter.
Further, the drain electrode over-current detection element is high-voltage fast recovery, second current limiting element, third
Current limiting element and the 4th current limiting element are respectively current-limiting resistance, and the power storage element is polarity free capacitor, and blocking element is to block
Diode.
A kind of detection method of high pressure SIC device over-current detection circuits, including：
When SIC devices overcurrent to be detected or short trouble, voltage increases to over voltage-stabiliser tube between SIC devices drain-source to be detected
Zener voltage, drain electrode over-current detection element become reverse bias from forward bias, and electric current flows through voltage stabilizing by the output of driving circuit
Pipe and the 4th current limiting element charge to power storage element, while triode ON, and triode output level is dragged down, and realize overcurrent shape
The quick detection of state.
Further, when SIC devices normally to be detected, electric current is from the output end of driving circuit successively from the second current limliting
Element, drain electrode over-current detection element flow into SIC devices to be detected, and branch is not connected where voltage-stabiliser tube, triode cut-off state, and three
Pole pipe output is high level；
When SIC devices normal turn-off to be detected, drain over-current detection element reverse bias, voltage-stabiliser tube forward bias, three poles
Pipe ends, and triode output is high level.
A kind of high pressure SIC device current foldback circuits include that the switch being connected with high pressure SIC device over-current detection circuits is patrolled
Signal generation unit is collected, the switch logic signals generate unit and pass through conducting and shutdown that driving circuit drives SIC devices；
It includes the light being connected with high pressure SIC device over-current detection circuit output ends that the switch logic signals, which generate unit,
Coupling, the switch control signal that over-current signal and controller after light-coupled isolation are sent out are transmitted to latch and are latched,
The switch control signal that over-current signal and controller by latch lockout are sent out is transmitted to carries out operation with door, defeated with door
Go out the switching signal that signal is SIC devices.
Further, the switching signal of the SIC devices generates the drive voltage signal of two kinds of level through overdrive circuit,
It is respectively used to driving SIC break-over of device and the shutdown of SIC devices.
Further, it is connected with driving resistance between the driving circuit and the grid of SIC devices, drives resistance and SIC
Discharge resistance is connected between the source electrode of device, guarantee prevents SIC device grids when driving circuit is in high resistant output state
Capacitance surprisingly charged, the discharge resistance provide a bleed-off circuit.
Further, the driving circuit provides positive and negative driving voltage by isolation accessory power supply output V+ and V- for it.
A kind of high pressure SIC devices over-current detection and protection circuit, including above-mentioned high pressure SIC devices over-current detection circuit and height
Press SIC device current foldback circuits.
A kind of working method of high pressure SIC devices over-current detection and protection circuit, including：
It is low level that high pressure SIC device over-current detection circuits, which detect over-current state, and optocoupler output is low level, controller hair
The switch control signal gone out is high level, and latch output is low level, and switch control signal Latch output signal is transmitted to
It is to become low level from high level with door output with door；
Capacitance discharges in high pressure SIC device over-current detection circuits, triode cut-off, high pressure SIC device over-current detection circuits
Output restores high level, and optocoupler output reverts to high level, and the switch control signal that controller is sent out is high level, and latch is defeated
Go out and remain low level in current switch period, realize over-current signal locking, low level, SIC devices are also remained with door output
Part is held off, it is ensured that the effective reliable turn-off of SIC devices in overcurrent.
A kind of high pressure SIC devices over-current detection and protective device, including SIC devices and the high pressure that is connected with the SIC devices
SIC devices over-current detection and protection circuit.
The SIC devices are SIC MOSFET or SIC IGBT.
Beneficial effects of the present invention：
SIC devices over-current detection of the present invention and protection circuit structure are clear, realize and are easy.SIC when overcurrent/short circuit does not occur
Device can be with normal switch, but can realize the quick inspection to overcurrent condition by capacitance C1 chargings when overcurrent/short circuit occurs
It surveys, so that over-current signal Fault1 is lower, while being locked to the over-current signal after Phototube Coupling and latch, switch is patrolled
Switching signal can quickly be blocked in current switch period by collecting signal generation unit, improve entire overcurrent/short circuit
The protection speed for protecting circuit quickly reliably protects SIC devices to realize.
Description of the drawings
Fig. 1 is a kind of novel high-pressure SIC devices over-current detection of the present invention and protects the physical circuit figure of circuit；
Fig. 2 is a kind of work schedule schematic diagram of SIC devices Over Current Protection System provided by the invention.
Specific implementation mode：
The present invention is described in detail below in conjunction with the accompanying drawings：
A kind of novel high-pressure SIC devices over-current detection and protection circuit, it is by driving circuit, over-current detection circuit and switch
Logical signal generates the compositions such as unit.
In the present embodiment, the switch logic signals generate unit by optocoupler OPTO1, latch RS1 and high speed logic
With the compositions such as door AND1.
The over-current detection circuit in the present embodiment, the first end of resistance R1 and the output end Buffer of driving circuit
Out is connected, and the second end of resistance R1 is connected with the first end of the grid of SIC devices M1 and the resistance R5 respectively, resistance R5's
Second end is connected with the source electrode of the M1, in the M1 accesses main circuit；
R1 and R5 does not include in over-current detection circuit, and R1 belongs to driving circuit, and R5 belongs to the attached of SIC devices itself
The GS interpolars of protection element, in general MOS/IGBT have this resistance.
The cathode of diode D1 is connected with the drain electrode of the M1, the anode of the diode D1 respectively with the voltage-stabiliser tube
The cathode of ZD1 is connected with the first end of the resistance R2, the second end output with the driving circuit respectively of the resistance R2
End Buffer out are connected with the first end of the resistance R3, the anode phase of the second end of the resistance R3 and the diode D2
Even；The anode of the voltage-stabiliser tube ZD1 is connected with the first end of the resistance R4, the second end of the resistance R4 respectively with the electricity
The first end for holding C1 is connected with the base stage of the triode Q1, the emitter of the second end of the capacitance C1 and the triode Q1
It is connected and is grounded simultaneously；The cathode of the diode D2 is connected with the collector of the triode Q1 connects optocoupler OPTO1's simultaneously
Input terminal Fault1.
In the present embodiment, SIC devices M1 is SIC MOSFET.
Switch logic signals in the present embodiment generate unit, the first input end of latch RS1 and the optocoupler
The output end Fault2 of OPTO1 is connected, the output end Fault3 of high speed logic and the first input end and latch RS1 of door AND1
It is connected.The second input terminal of latch RS1 and the second input terminal inputPWM with door AND1 are opening of sending out of controller
Close control signal；
The input terminal Fault1 of optocoupler OPTO1 is over-current signal, the output end Fault2 of the optocoupler OPTO1 be by every
From over-current signal, the output end Fault3 of the latch RS1 is the over-current signal by latch lockout.
In the present embodiment, driving circuit provides positive and negative driving voltage by isolation accessory power supply output+20V and -5V for it；
The Drive signal with door AND1 output are the switching signals of SIC MOSFET, through overdrive circuit generation+20V and-
The drive voltage signal of two kinds of level of 5V, wherein+20V level driver SIC MOSFET conductings, -5V level driver SIC MOSFET
Shutdown.
In the present embodiment, voltage-stabiliser tube ZD1 is overcurrent protection action threshold value voltage-stabiliser tube, and the Zener voltage of voltage-stabiliser tube ZD1 is determined
The action threshold value of current foldback circuit is determined, wherein specific output characteristics and safe work of the threshold value according to SIC MOSFET used
It is set as 10V as region.
Operation principle：
Fig. 1 is the physical circuit figure of present embodiment, drives of the Drive signal through overdrive circuit generation+20V, -5V
Dynamic voltage signal, when drive signal Drive signal are high level, Buffer out outputs are+20V, and M1 is driven by R1
Conducting；When Drive signal are low level, Buffer out outputs are -5V, and M1 is discharged rapidly by R1, to ensure that M1 is fast
Speed shutdown.
R2, R3, R4 are current-limiting resistances, and R1 is driving resistance.
D1, D2, R2, R3, R4, ZD1, C1 and Q1 constitute over-current detection circuit.Wherein D1 is detection diode, for detecting
Overcurrent condition, diode D2 are blocking diodes；The Zener voltage of voltage-stabiliser tube ZD1 determines that the action threshold value of protection circuit is (steady
Pressure pipe ZD1 is 10V), over-current signal Fault1 is connected to follow-up switch logic signals and generates unit.
In conjunction with Fig. 2：
During 0~t1, M1 does not occur overcurrent or short trouble, the waveform phase of signal inputPWM and Drive signal
Together, M1 normal switch, principle are explained as follows：When Drive signal are high level, M1 conductings, the drain-source interpolar pressure drop of M1 at this time
It is small, secure threshold, diode D1 forward bias are not exceeded, electric current flows into M1 from Buffer out by R2, D1, since R2 hinders
It is worth larger, which can ignore influence caused by M1 electric currents.The voltage on voltage-stabiliser tube ZD1 does not exceed its Zener at this time
Voltage, no electric current flow through ZD1, and triode Q1 is in cut-off state, and Fault1 is high level, and it is high electricity that optocoupler, which exports Fault2,
It is flat, and inputPWM signals are high level, latch output Fault3 remains high level, therefore Fault3 and inputPWM believes
Number by with Drive signal are exported after gate action is high level signal, M1 normallies.Drive signal are low level
When, M1 is turned off, and voltage is main circuit voltage between M1 drain-sources, and diode D1 reverse bias, ZD1 forward bias, triode Q1 is still
Cut-off, Fault1 are high level, and it is high level that optocoupler, which exports Fault2, and inputPWM signals are low level, latch output
Fault3 is set to high level, therefore is low level signal, M1 normal turn-offs with door output Drive signal.
Wherein, blocking diode D2 is acted on：When Drive signal are low level, Buffer out are driving negative electricity
If pressure -5V constitutes circuit, i.e. two pole of optocoupler OPTO1 primary sides at this time without D2 between optocoupler OPTO1 primary sides and Buffer out
Pipe is connected, and it is that low level causes overcurrent to malfunction to which Fault3 is set low that optocoupler OPTO1 pairs side, which exports Fault2,.D2 can hinder
Only circuit is constituted between optocoupler OPTO1 primary sides and Buffer out when Drive signal are low level.
When at the t1 moment, when overcurrent or short trouble occurs during conducting in M1, voltage increases between the drain-source of M1, if being more than
The Zener voltage 10V of voltage-stabiliser tube ZD1, diode D1 become reverse bias from forward bias, and electric current flows through ZD1 by Buffer out
It charges to C1 with R4, while triode Q1 conductings, Fault1 level is dragged down, realizes the quick detection of over-current state.
Simultaneously unit is generated in switch logic signals：Fault1 level drags down, and it is low level that optocoupler, which exports Fault2 also, and
InputPWM signals are high level, and latch output Fault3 is set to low level, and Drive signal are exported from high level with door
Become low level, capacitance C1 is discharged by R4, ZD1, R2, R1, while Q1 is no longer turned on, and Fault1 restores high level, optocoupler again
Output Fault2 reverts to high level, and inputPWM signals are still high level, therefore latch output Fault3 is opened currently
The pass period remains low level, realizes over-current signal locking, also remains low level with door output Drive signal, M1 is protected
Hold off state, it is ensured that the effective reliable turn-offs of M1 in overcurrent.Optocoupler, latch and the delay very little with door, thus it is entire
Detection postpones small with protection execution circuit, and when overcurrent can rapidly and efficiently protect silicon carbide device.
After overcurrent protection act, at the t2 moment, control signal inputPWM is low level, and optocoupler exports Fault2
For high level, therefore latch output Fault3 is set to high level, and over-current signal no longer influences the control signal that controller is sent out.
If next switch periods over current fault excludes, circuit can be restored to normal operating conditions.If next switch periods M1
It is still within over-current state, then circuit continues to protect M1.
Therefore, when circuit normal work does not occur overcurrent/short trouble, the over-current detection and protection circuit can ensure
The control drive signal normal driving SIC devices that controller is sent out；And when there is overcurrent/short trouble, the circuit can and
When detect over-current signal, and SIC devices are rapidly switched off in current switch period, to protect device that will not damage.
Above-mentioned, although the foregoing specific embodiments of the present invention is described with reference to the accompanying drawings, not protects model to the present invention
The limitation enclosed, those skilled in the art should understand that, based on the technical solutions of the present invention, those skilled in the art are not
Need to make the creative labor the various modifications or changes that can be made still within protection scope of the present invention.
Claims (7)
1. a kind of high pressure SIC device current foldback circuits, characterized in that including being connected with high pressure SIC device over-current detection circuits
Switch logic signals generate unit, the switch logic signals generate unit and pass through the conducting that driving circuit drives SIC devices
And shutdown；
It includes the optocoupler being connected with high pressure SIC device over-current detection circuit output ends that the switch logic signals, which generate unit, warp
The switch control signal that the over-current signal and controller crossed after light-coupled isolation are sent out is transmitted to latch and is latched, by lock
The switch control signal that the over-current signal and controller of storage locking are sent out is transmitted to carries out operation, the output signal with door with door
For the switching signal of SIC devices；
The high pressure SIC device over-current detection circuits, including the drain electrode over-current detection that one end is connected with SIC devices to be detected are first
Part, the drain electrode over-current detection element other end are connected to the negative pole end of the second current limiting element and voltage-stabiliser tube, second current limliting
One end of element is connected with third current limiting element, blocking element and transistor collector, the other end of the second current limiting element in turn
It is connected with voltage-stabiliser tube, the 4th current limiting element and transistor base in turn；
It is provided with power storage element between the transistor base and transistor emitter.
2. a kind of high pressure SIC device current foldback circuits as described in claim 1, characterized in that the drain electrode over-current detection
Element is high-voltage fast recovery, and second current limiting element, third current limiting element and the 4th current limiting element are respectively current limliting
Resistance, the power storage element are polarity free capacitor, and blocking element is blocking diode.
3. a kind of high pressure SIC device current foldback circuits as described in claim 1, characterized in that the switch of the SIC devices
Signal generates the drive voltage signal of two kinds of level through overdrive circuit, is respectively used to driving SIC break-over of device and SIC devices close
It is disconnected.
4. a kind of high pressure SIC device current foldback circuits as described in claim 1, characterized in that the driving circuit and SIC
It is connected with driving resistance between the grid of device, drives and is connected with discharge resistance between resistance and the source electrode of SIC devices；
The driving circuit provides positive and negative driving voltage by isolation accessory power supply output V+ and V- for it.
5. a kind of high pressure SIC devices over-current detection and protection circuit, characterized in that including high pressure SIC devices described in claim 1
Part over-current detection circuit and the high pressure SIC device current foldback circuits.
6. based on the working method of a kind of high pressure SIC devices over-current detection and protection circuit described in claim 5, feature
It is, including：
It is low level that high pressure SIC device over-current detection circuits, which detect over-current state, and optocoupler output is low level, what controller was sent out
Switch control signal is high level, and latch output is low level, and switch control signal Latch output signal is transmitted to and door,
It is to become low level from high level with door output；
Power storage element is discharged in high pressure SIC device over-current detection circuits, triode cut-off, high pressure SIC device over-current detection circuits
Output restores high level, and optocoupler output reverts to high level, and the switch control signal that controller is sent out is high level, and latch is defeated
Go out and remain low level in current switch period, realize over-current signal locking, low level, SIC devices are also remained with door output
Part is held off, it is ensured that the effective reliable turn-off of SIC devices in overcurrent.
7. a kind of high pressure SIC devices over-current detection and protective device, including SIC devices and be connected with the SIC devices using power
Profit requires the high pressure SIC devices over-current detection described in 5 and protection circuit.
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| CN108205100A (en) * | 2016-12-16 | 2018-06-26 | 深圳市三诺数字科技有限公司 | A kind of circuit checker |
| WO2018179274A1 (en) * | 2017-03-30 | 2018-10-04 | 三菱電機株式会社 | Drive circuit for power semiconductor element, and motor drive device |
| CN108322033B (en) * | 2018-03-29 | 2019-04-26 | 西安理工大学 | The overcurrent protective device of SiCMOSFET converter and guard method |
| CN109327212A (en) * | 2018-08-23 | 2019-02-12 | 湖南强军科技有限公司 | A kind of driving circuit of SiC MOSFET |
| CN110417251B (en) * | 2019-07-09 | 2021-08-13 | 广东美的制冷设备有限公司 | PFC circuit and air conditioner |
| CN112859658A (en) * | 2019-11-27 | 2021-05-28 | 株洲中车时代电气股份有限公司 | Dry node output control device |
| CN111257716B (en) * | 2020-02-24 | 2022-06-10 | 漳州科华技术有限责任公司 | IGBT over-current detection circuit, chip and electronic equipment |
| CN112713840A (en) * | 2020-12-17 | 2021-04-27 | 中国航空工业集团公司成都飞机设计研究所 | Single-phase drive module and drive circuit of motor |
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