CN202435330U - Power module driving protection system of permanent magnet synchronous motor controller - Google Patents
Power module driving protection system of permanent magnet synchronous motor controller Download PDFInfo
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- CN202435330U CN202435330U CN2011205595299U CN201120559529U CN202435330U CN 202435330 U CN202435330 U CN 202435330U CN 2011205595299 U CN2011205595299 U CN 2011205595299U CN 201120559529 U CN201120559529 U CN 201120559529U CN 202435330 U CN202435330 U CN 202435330U
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Abstract
The utility model discloses a power module driving protection system of a permanent magnet synchronous motor controller. The power module driving protection system specifically comprises an over-voltage protection unit, an over-current protection unit, an over-temperature protection unit, a gate electrode protection unit, a short circuiting protection unit and an over-voltage clamping protection unit. Faults such as over-voltage, over-current, over-temperature, under-voltage, short circuiting and over high surge voltage which probably occur during work of a power module is timely prevented and detected and a protection function is started through each power module driving protection unit; and thus, comprehensive protection for power module driving is realized, the reliability of work of the power module is guaranteed, and reliable operation of the permanent magnet synchronous motor controller and even the entire motor system is improved.
Description
Technical field
The utility model relates to power model drive protecting system field, relates in particular to a kind of permagnetic synchronous motor controller power model drive protecting system.
Background technology
At present, because that permagnetic synchronous motor has a volume is little, loss is low; The advantage that efficient is high; In the application of pure electric automobile field and field of hybrid electric vehicles more and more widely, in view of the high reliability request of automobile, permagnetic synchronous motor and controller thereof also should have high reliability; And power model is as the main components and parts of permagnetic synchronous motor controller, and can it reliably working have determined the reliability of permagnetic synchronous motor controller and even whole electric system.
Power model can adopt IGBT (Insulated Gate Bipolar Transistor; Insulated gate bipolar transistor) or power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor; The power field effect transistor); Because IGBT has big, the withstand voltage height of current capacity, saturation pressure reduction, operating frequency is high, input impedance is high, the easy advantage that drives, and therefore adopts the power model of IGBT as the permagnetic synchronous motor controller.
For the guaranteed output module can reliably working; The permagnetic synchronous motor controller is except providing reliable power model drive signal; Also should have enough power model drive protecting functions; And still do not have perfect power model drive protecting system in the prior art, and cause the functional reliability of power model low, influence the reliability service of permagnetic synchronous motor controller and even whole electric system.
The utility model content
In view of this, the purpose of the utility model is to provide a kind of permagnetic synchronous motor controller power model drive protecting system, does not have perfect power model drive protecting system, the problem that the power model functional reliability is low in the prior art to overcome.
In order to achieve the above object, the utility model provides following technical scheme:
A kind of permagnetic synchronous motor controller power model drive protecting system comprises:
The Overvoltage protecting unit that links to each other with power model;
The over-current protecting unit that links to each other with said power model;
The over-temperature protection unit that links to each other with said power model;
The gate pole protected location that links to each other with said power model;
The short-circuit protection unit that links to each other and link to each other with said power model with said gate pole protected location;
The over-voltage clamping protected location that links to each other with said power model, said gate pole protected location and short-circuit protection unit.
Preferably, said Overvoltage protecting unit comprises:
Whether the voltage that detects said power model two ends the voltage detecting circuit of overvoltage;
According to the testing result of said voltage detecting circuit, judge whether to start the control circuit of protection.
Preferably, said over-current protecting unit comprises:
Whether the electric current that said power model is flow through in detection the current detection circuit of overcurrent;
According to the testing result of said current detection circuit, judge whether to start the control circuit of protection.
Preferably, said over-temperature protection unit comprises:
Whether the internal temperature that detects said power model the temperature sensing circuit of excess temperature;
According to the testing result of said temperature sensing circuit, judge whether to start the control circuit of protection.
Preferably, said gate pole protected location comprises:
Power model chip for driving U1;
The voltage stabilizing didoe D4 that negative pole links to each other with the gate pole of said power model;
Anodal and said voltage stabilizing didoe D4 is anodal to link to each other the voltage stabilizing didoe D5 of minus earth;
One end links to each other with said power model gate pole, the resistance R 4 of other end ground connection;
The capacitor C 4 parallelly connected with said resistance R 4;
Said short-circuit protection unit comprises:
One end links to each other with the pin DESAT of said power model chip for driving U1, the capacitor C 2 of other end ground connection;
The resistance R 1 that one end links to each other with the high potential of said capacitor C 2;
The rectifier diode D1 that the other end of anodal and said resistance R 1 links to each other, the negative pole of said rectifier diode D1 links to each other with the collector electrode of power model;
Said over-voltage clamping protected location comprises:
The voltage stabilizing didoe D2 that negative pole links to each other with said power model collector electrode;
The positive pole of anodal and said voltage stabilizing didoe D2 links to each other, the rectifier diode D3 that negative pole links to each other with said power model gate pole;
One end and the anodal current-limiting resistance R5 that links to each other of voltage stabilizing didoe D2;
The rectifier diode D6 that the other end of anodal and said current-limiting resistance R5 links to each other;
The NPN transistor Q1 that base stage links to each other with said rectifier diode D6 negative pole, the collector electrode of said transistor Q1 links to each other with power supply VCC;
The PNP transistor Q2 that emitter links to each other with said transistor Q1 emitter, the base stage of said transistor Q2 links to each other with the base stage of said transistor Q1, and collector electrode links to each other with the pin VEE of said power model chip for driving U1;
The gate electrode resistance R3 that one end links to each other with the emitter of said transistor Q1, the other end of said gate electrode resistance R3 links to each other with the gate pole of said power model;
Wherein, The pin FLT of said power model chip for driving U1 links to each other with power supply VC through current-limiting resistance R6; Pin VCC2 links to each other with said power supply VCC and was open to the custom capacitor C 1 ground connection; Pin OUT links to each other with the negative pole of rectifier diode D6 through resistance R 2, pin GND2 ground connection, and said pin VEE is through capacitor C 3 ground connection.
Preferably, said power model is an insulated gate bipolar transistor IGBT.
Can know via above-mentioned technical scheme; The drive protecting system of the disclosed a kind of permagnetic synchronous motor controller power model of the utility model; Concrete Overvoltage protecting unit, over-current protecting unit, over-temperature protection unit, gate pole protected location, short-circuit protection unit and the over-voltage clamping protected location of passing through; The overvoltage that occurs when power model is worked, overcurrent, excess temperature, short circuit, under-voltage, surge voltage is excessive etc., and fault detects and protection starting timely, thereby, realized the protection in all directions that power model is driven; Guarantee the reliability of power model work, improved the reliability service of permagnetic synchronous motor controller and even whole electric system.
Description of drawings
Fig. 1 is the theory diagram of the permagnetic synchronous motor controller power model drive protecting that provides of the utility model;
Fig. 2 is the theory diagram of overvoltage protection, overcurrent protection and overheat protector in the power model drive protecting that provides of the utility model;
Fig. 3 is the schematic diagram of short-circuit protection in the power model drive protecting that provides of the utility model, gate pole protection and over-voltage clamping protection.
Embodiment
The utility model is an a kind of permagnetic synchronous motor controller power model drive protecting system; In the disclosed system of present embodiment; Through Overvoltage protecting unit, over-current protecting unit, over-temperature protection unit, gate pole protected location, short-circuit protection unit and over-voltage clamping protected location; The overvoltage that occurs when power model is worked, overcurrent, excess temperature, short circuit, under-voltage, fault such as surge voltage is excessive; In time detect and start protection, realized the omnibearing protection that possibly go wrong, guaranteed the reliability Work of power model power model.
For the purpose, technical scheme and the advantage that make the utility model embodiment clearer; To combine the accompanying drawing among the utility model embodiment below; Technical scheme among the utility model embodiment is carried out clear, intactly description; Obviously, described embodiment is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1, the theory diagram of the permagnetic synchronous motor controller power model drive protecting that provides for the utility model embodiment.Its power model drive protecting system specifically comprises:
The Overvoltage protecting unit 101 that links to each other with power model 100;
The over-current protecting unit 102 that links to each other with said power model 100;
The over-temperature protection unit 103 that links to each other with said power model 100;
The gate pole protected location 104 that links to each other with said power model 100;
The short-circuit protection unit 105 that links to each other and link to each other with said power model 100 with said gate pole protected location 104;
The over-voltage clamping protected location 106 that links to each other with said power model 100, said gate pole protected location 104 and short-circuit protection unit 105.
Wherein, said Overvoltage protecting unit 101 is used to protect power model 100 not damaged by overvoltage; Said over-current protecting unit 102 is used to protect power model 100 not burnt by overcurrent; Said over-temperature protection unit 103 is used to prevent that power model 100 from being burnt out because of temperature is too high; Said gate pole protected location 104, the gate pole that is used to protect power model 100 is not by overvoltage or electrostatic damage, and the driving voltage of guaranteed output module 100 gate poles undervoltage condition can not occur; Said short-circuit protection unit 105 is used to prevent that power model 100 from being burnt out because of short circuit; Said over-voltage clamping protected location 106, too high being damaged of surge voltage that produces when being used to prevent power model 100 because of shutoff.
On the disclosed basis of the utility model embodiment, each protected location is carried out bright specifically below.
As shown in Figure 2, be the theory diagram of overvoltage protection, overcurrent protection and the overheat protector of present embodiment execution mode.Wherein, the Overvoltage protecting unit 101 in the present embodiment, over-current protecting unit 102 and over-temperature protection unit 103 are made up of relevant detection circuit and control circuit 207 respectively, are specially:
Said Overvoltage protecting unit 101 comprises: whether the voltage that detects said power model two ends the voltage detecting circuit of overvoltage; According to the testing result of said voltage detecting circuit, judge whether to start the control circuit 207 of protection.
Wherein, said voltage detecting circuit comprises voltage detecting 201 and voltage comparator 202.Said voltage detecting 201 is used to detect the voltage that is added in power model 100 two ends; Said voltage comparator 202 is used for the voltage signal according to 201 outputs of said voltage detecting, judges the whether overvoltage of voltage that is added in power model 100 two ends.
Need to prove; Said voltage detecting 201 can use Hall voltage detecting element or bleeder circuit to realize; Said voltage comparator 202 available dedicated comparators or discharge circuit realize that said control circuit 207 can be made up of governor circuit in the electric machine controller and performance element.
Said over-current protecting unit 102 comprises: detect the electric current current detection circuit of overcurrent whether flow through said power model; According to the testing result of said current detection circuit, judge whether to start the control circuit 207 of protection.
Wherein, said current detection circuit comprises current detecting 203 and voltage comparator 204.Said current detecting 203 is used to detect the circuit that flows through power model 100; Said voltage comparator 204 is used for the output signal according to said current detecting 203, judges the electric current overcurrent whether flow through power model 100.
Need to prove; Said current detecting 203 can be used the Hall current detecting element or detect current resistor and realize; Said voltage comparator 204 available dedicated comparators or discharge circuit realize that said control circuit 207 can be made up of governor circuit in the electric machine controller and performance element.
Said over-temperature protection unit 103 comprises: whether the internal temperature that detects said power model the temperature sensing circuit of excess temperature; According to the testing result of said temperature sensing circuit, judge whether to start the control circuit 207 of protection.
Wherein, said temperature sensing circuit comprises temperature detection 205 and voltage comparator 206.Said temperature detection 205 is used for the internal temperature of detection power module 100; Said voltage comparator 206 is used for the output signal according to said temperature detection 205, and whether the inside of judging power model 100 excess temperature.
Need to prove that said temperature detection 205 can realize that said voltage comparator 206 available dedicated comparators or discharge circuit realize that said control circuit 207 can be made up of governor circuit in the electric machine controller and performance element with thermistor or thermocouple.
Protection process for above-mentioned Overvoltage protecting unit 101, over-current protecting unit 102 and over-temperature protection unit 103 is:
Whether at first, corresponding testing circuit and voltage comparator circuit elder generation detection power module 100 fault of overvoltage, overcurrent or excess temperature occurs;
Then, the governor circuit in the control circuit 207 determines whether to start protection according to corresponding detection result;
At last, carry out the corresponding protection function by the performance element in the control circuit 207.
Need to prove; Overvoltage protecting unit, over-current protecting unit and temperature protection unit are relatively slow to the protection process of power model, are primarily aimed at the fault that normal overvoltage, overcurrent and excess temperature etc. that power model occurs in the course of the work can not cause power model to damage moment.
As shown in Figure 3, the schematic diagram of short circuit protected location, gate pole protected location and over-voltage clamping protected location in the power model drive protecting that provides for the utility model embodiment.Said gate pole protected location 104, short-circuit protection unit 105 and over-voltage clamping protected location 106 are made up of power model chip for driving and peripheral circuit thereof.The circuit concrete structure is:
Power model chip for driving U1;
The voltage stabilizing didoe D4 that negative pole links to each other with the gate pole of said power model;
Anodal and said voltage stabilizing didoe D4 is anodal to link to each other the voltage stabilizing didoe D5 of minus earth;
One end links to each other with said power model gate pole, the resistance R 4 of other end ground connection;
The capacitor C 4 parallelly connected with said resistance R 4;
One end links to each other with the pin DESAT of said power model chip for driving U1, the capacitor C 2 of other end ground connection;
The resistance R 1 that one end links to each other with the high potential of said capacitor C 2;
The rectifier diode D1 that the other end of anodal and said resistance R 1 links to each other, the negative pole of said rectifier diode D1 links to each other with the collector electrode of power model;
The voltage stabilizing didoe D2 that negative pole links to each other with said power model collector electrode;
The positive pole of anodal and said voltage stabilizing didoe D2 links to each other, the rectifier diode D3 that negative pole links to each other with said power model gate pole;
One end and the anodal current-limiting resistance R5 that links to each other of voltage stabilizing didoe D2;
The rectifier diode D6 that the other end of anodal and said current-limiting resistance R5 links to each other;
The NPN transistor Q1 that base stage links to each other with said rectifier diode D6 negative pole, the collector electrode of said transistor Q1 links to each other with power supply VCC;
The PNP transistor Q2 that emitter links to each other with said transistor Q1 emitter, the base stage of said transistor Q2 links to each other with the base stage of said transistor Q1, and collector electrode links to each other with the pin VEE of said power model chip for driving U1;
The gate electrode resistance R3 that one end links to each other with the emitter of said transistor Q1, the other end of said gate electrode resistance R3 links to each other with the gate pole of said power model;
The pin FLT of said power model chip for driving U1 links to each other with power supply VC through current-limiting resistance R6; Pin VCC2 links to each other with said power supply VCC and was open to the custom capacitor C 1 ground connection; Pin OUT links to each other with the negative pole of rectifier diode D6 through resistance R 2; Pin GND2 ground connection, said pin VEE is through capacitor C 3 ground connection.
Wherein, the power model in the present embodiment 100 is an insulated gate bipolar transistor IGBT.
In the entire circuit structure, said gate pole protected location 104 comprises:
Power model chip for driving U1, voltage stabilizing didoe D4, voltage stabilizing didoe D5, pull down resistor R4 and capacitor C 4.
Wherein, said voltage stabilizing didoe D4 and voltage stabilizing didoe D5 form the bi-directional voltage stabilizing diode, be used for the gate voltage of power model IGBT is stabilized in the safe range, with the gate pole that prevents power model IGBT by overvoltage or electrostatic damage; Said pull down resistor R4 is used for a low-impedance path is provided between the gate pole of power model IGBT and ground, and it is logical to prevent that power model IGBT from being opened by mistake; Said capacitor C 4 is used to suppress the due to voltage spikes on the power model IGBT gate pole, protection power model IGBT gate pole; Power model chip for driving U1 utilizes the built-in voltage comparator, can judge directly whether the gate drive voltage of power model IGBT is under-voltage, if under-voltage, then directly block the output of power model drive signal to realize under-voltage protection.
Said short-circuit protection unit 105 comprises:
Power model chip for driving U1, rectifier diode D1, divider resistance R1 and capacitor C 2.
Wherein, said rectifier diode D1 is used to stop the high pressure on the power model IGBT directly to be added in power model chip for driving U1, avoids causing power model chip for driving U1 to damage; Said divider resistance R1 is used to be provided with the threshold voltage value of short-circuit protection; Said capacitor C 2 is used to be provided with the response time of short-circuit protection; Said power model chip for driving U1 provides continuous current output, is used for whether short circuit of detection power module I GBT, and determines whether that according to testing result needs carry out short-circuit protection, if desired, and execute protection function then.
The detailed process of short-circuit protection is: the pin DESAT output continuous current of power model chip for driving U1; Form certain voltage through said divider resistance R1, rectifier diode D1 and power model IGBT; This voltage is the voltage of pin DESAT, and power model chip for driving U1 monitors the magnitude of voltage on its pin DESAT in real time, if power model IGBT is short-circuited; The voltage at its two ends can become big rapidly; Cause the corresponding increase of voltage on the pin DESAT, power model chip for driving U1 then confirms to start protection according to the voltage on its pin DESAT, realizes short-circuit protection thereby export through direct blockade power model drive signal.
Said over-voltage clamping protected location comprises:
Voltage stabilizing didoe D2, rectifier diode D3, current-limiting resistance R5, rectifier diode D6, transistor Q1, transistor Q2 and gate electrode resistance R3.
Wherein, said voltage stabilizing didoe D2 is used to stop the high pressure on the power model IGBT directly to be added in power model chip for driving U1, prevents to cause the damage of power model chip for driving U1; Said rectifier diode D3 is used to prevent that its gate current flows to its collector electrode when power model IGBT from opening; When said current-limiting resistance R5 is used to limit voltage stabilizing didoe D2 reverse-conducting, flow through the electric current of rectifier diode D6; When said rectifier diode D6 was used to prevent that power model IGBT from opening, the drive signal of said power model chip for driving U1 output flowed to the collector electrode of power model IGBT through voltage stabilizing didoe D2; Said transistor Q1 and transistor Q2 constitute push-pull circuit, are used for the power model drive signal is carried out power amplification; Said gate electrode resistance R3 is used to limit the gate drive current of power model IGBT, the surge voltage when power-limiting module I GBT turn-offs simultaneously.
The detailed process of over-voltage clamping protection is: when power model IGBT turn-offs; If the surge voltage that produces on its collector electrode has surpassed the value that is allowed; Then said voltage stabilizing didoe D2 reverse-conducting, the conducting electric current flows to the gate pole of said power model IGBT through said rectifier diode D3, also flows to the gate pole of transistor Q1 and transistor Q2 simultaneously through said current-limiting resistance R5, rectifier diode D6; The gate voltage of power model IGBT is improved; It is precipitous that thereby the cut-off current that makes power model IGBT can overvoltage, and then the surge voltage that produces on the power model IGBT collector electrode is reduced, and realized the over-voltage clamping protection to power model IGBT.
Need to prove that in the entire circuit structure, said resistance R 6 plays current-limiting protection power model chip for driving U1, said capacitor C 1, C3 cooperate power model chip for driving U1 to discharge and recharge, and shield equally.
This shows; Said short-circuit protection unit; Gate pole protected location and over-voltage clamping protected location all are made up of power model chip for driving and peripheral circuit thereof; Power model chip for driving and peripheral circuit thereof be detection failure and protection starting directly, and the protection process is fast, is primarily aimed at the fault that meeting such as the short circuit, gate pole overvoltage and the collector overvoltage that occur in power model course of work moment causes power model to damage.
Through the disclosed power model drive protecting of above-mentioned the utility model embodiment system; Through Overvoltage protecting unit, over-current protecting unit, over-temperature protection unit, gate pole protected location, short-circuit protection unit and over-voltage clamping protected location; To the overvoltage that occurs in the power model work, overcurrent, excess temperature, short circuit, under-voltage, surge voltage is excessive etc., and fault is carried out real-time detection and protection starting; Reached effective control to power module voltage, electric current, temperature; Realized protection in all directions, guaranteed the reliability of power model work the power model driving.
The above only is the preferred implementation of the utility model; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection range of the utility model.
Claims (6)
1. a permagnetic synchronous motor controller power model drive protecting system is characterized in that, comprising:
The Overvoltage protecting unit that links to each other with power model;
The over-current protecting unit that links to each other with said power model;
The over-temperature protection unit that links to each other with said power model;
The gate pole protected location that links to each other with said power model;
The short-circuit protection unit that links to each other and link to each other with said power model with said gate pole protected location;
The over-voltage clamping protected location that links to each other with said power model, said gate pole protected location and short-circuit protection unit.
2. system according to claim 1 is characterized in that, said Overvoltage protecting unit comprises:
Whether the voltage that detects said power model two ends the voltage detecting circuit of overvoltage;
According to the testing result of said voltage detecting circuit, judge whether to start the control circuit of protection.
3. system according to claim 1 is characterized in that, said over-current protecting unit comprises:
Whether the electric current that said power model is flow through in detection the current detection circuit of overcurrent;
According to the testing result of said current detection circuit, judge whether to start the control circuit of protection.
4. system according to claim 1 is characterized in that, said over-temperature protection unit comprises:
Whether the internal temperature that detects said power model the temperature sensing circuit of excess temperature;
According to the testing result of said temperature sensing circuit, judge whether to start the control circuit of protection.
5. system according to claim 1 is characterized in that, said gate pole protected location comprises:
Power model chip for driving U1;
The voltage stabilizing didoe D4 that negative pole links to each other with the gate pole of said power model;
Anodal and said voltage stabilizing didoe D4 is anodal to link to each other the voltage stabilizing didoe D5 of minus earth;
One end links to each other with said power model gate pole, the resistance R 4 of other end ground connection;
The capacitor C 4 parallelly connected with said resistance R 4;
Said short-circuit protection unit comprises:
One end links to each other with the pin DESAT of said power model chip for driving U1, the capacitor C 2 of other end ground connection;
The resistance R 1 that one end links to each other with the high potential of said capacitor C 2;
The rectifier diode D1 that the other end of anodal and said resistance R 1 links to each other, the negative pole of said rectifier diode D1 links to each other with the collector electrode of power model;
Said over-voltage clamping protected location comprises:
The voltage stabilizing didoe D2 that negative pole links to each other with said power model collector electrode;
The positive pole of anodal and said voltage stabilizing didoe D2 links to each other, the rectifier diode D3 that negative pole links to each other with said power model gate pole;
One end and the anodal current-limiting resistance R5 that links to each other of voltage stabilizing didoe D2;
The rectifier diode D6 that the other end of anodal and said current-limiting resistance R5 links to each other;
The NPN transistor Q1 that base stage links to each other with said rectifier diode D6 negative pole, the collector electrode of said transistor Q1 links to each other with power supply VCC;
The PNP transistor Q2 that emitter links to each other with said transistor Q1 emitter, the base stage of said transistor Q2 links to each other with the base stage of said transistor Q1, and collector electrode links to each other with the pin VEE of said power model chip for driving U1;
The gate electrode resistance R3 that one end links to each other with the emitter of said transistor Q1, the other end of said gate electrode resistance R3 links to each other with the gate pole of said power model;
Wherein, The pin FLT of said power model chip for driving U1 links to each other with power supply VC through current-limiting resistance R6; Pin VCC2 links to each other with said power supply VCC and was open to the custom capacitor C 1 ground connection; Pin OUT links to each other with the negative pole of rectifier diode D6 through resistance R 2, pin GND2 ground connection, and said pin VEE is through capacitor C 3 ground connection.
6. system according to claim 1 is characterized in that, said power model is an insulated gate bipolar transistor IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205595299U CN202435330U (en) | 2011-12-28 | 2011-12-28 | Power module driving protection system of permanent magnet synchronous motor controller |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205595299U CN202435330U (en) | 2011-12-28 | 2011-12-28 | Power module driving protection system of permanent magnet synchronous motor controller |
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| CN202435330U true CN202435330U (en) | 2012-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205595299U Expired - Lifetime CN202435330U (en) | 2011-12-28 | 2011-12-28 | Power module driving protection system of permanent magnet synchronous motor controller |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104637929A (en) * | 2015-02-03 | 2015-05-20 | 柳州市同进汽车零部件制造有限公司 | IGBT (Insulated Gate Bipolar Transistor) module |
| CN106451342A (en) * | 2016-08-23 | 2017-02-22 | 成都沃尔法特科技有限公司 | Intelligent protection method and intelligent protection circuit for realizing same |
| CN107196273A (en) * | 2017-07-05 | 2017-09-22 | 上海旻成峰电子科技有限公司 | A kind of general protective circuit, comprehensive protector and Plastic packaging apparatus |
| CN110247615A (en) * | 2018-03-09 | 2019-09-17 | 深圳市蓝海华腾技术股份有限公司 | Wave limiting control system, method and electric machine controller based on dsp chip |
| CN110601520A (en) * | 2019-09-02 | 2019-12-20 | 海信（山东）空调有限公司 | PFC overvoltage protection circuit and PFC circuit |
-
2011
- 2011-12-28 CN CN2011205595299U patent/CN202435330U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104637929A (en) * | 2015-02-03 | 2015-05-20 | 柳州市同进汽车零部件制造有限公司 | IGBT (Insulated Gate Bipolar Transistor) module |
| CN106451342A (en) * | 2016-08-23 | 2017-02-22 | 成都沃尔法特科技有限公司 | Intelligent protection method and intelligent protection circuit for realizing same |
| CN107196273A (en) * | 2017-07-05 | 2017-09-22 | 上海旻成峰电子科技有限公司 | A kind of general protective circuit, comprehensive protector and Plastic packaging apparatus |
| CN107196273B (en) * | 2017-07-05 | 2020-09-15 | 上海一旻成峰电子科技有限公司 | Comprehensive protection circuit, comprehensive protection device and plastic packaging device |
| CN110247615A (en) * | 2018-03-09 | 2019-09-17 | 深圳市蓝海华腾技术股份有限公司 | Wave limiting control system, method and electric machine controller based on dsp chip |
| CN110247615B (en) * | 2018-03-09 | 2024-04-12 | 深圳市蓝海华腾技术股份有限公司 | Wave-by-wave current limiting control system and method based on DSP chip and motor controller |
| CN110601520A (en) * | 2019-09-02 | 2019-12-20 | 海信（山东）空调有限公司 | PFC overvoltage protection circuit and PFC circuit |
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Assignee: Chongqing Changan New Energy Automotive Technology Co., Ltd. Assignor: Chongqing Changan Automobile Co., Ltd.|Chongqing Chang'an New Energy Automobile Co., Ltd. Contract record no.: 2018500000022 Denomination of utility model: Power module driving protection system of permanent magnet synchronous motor controller Granted publication date: 20120912 License type: Exclusive License Record date: 20181130 |
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