CN107196273A - A kind of general protective circuit, comprehensive protector and Plastic packaging apparatus - Google Patents
A kind of general protective circuit, comprehensive protector and Plastic packaging apparatus Download PDFInfo
- Publication number
- CN107196273A CN107196273A CN201710543164.2A CN201710543164A CN107196273A CN 107196273 A CN107196273 A CN 107196273A CN 201710543164 A CN201710543164 A CN 201710543164A CN 107196273 A CN107196273 A CN 107196273A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of general protective circuit, comprehensive protector and Plastic packaging apparatus, the general protective circuit includes input protection circuit, thermal-shutdown circuit and short circuit over-current protection circuit；The input of input protection circuit connects the input control voltage of IGBT power semiconductor devices, and the output end of input protection circuit connects the input of thermal-shutdown circuit；The output end of thermal-shutdown circuit connects the input of short circuit over-current protection circuit；The output end of short circuit over-current protection circuit connects the input of IGBT power semiconductor devices.Above-mentioned technical proposal has the following advantages that or beneficial effect：It is real to realize that, not against peripheral circuit, the device being directly packaged into from igbt chip completes comprehensive precisely protection, improves the power density and reliability of IGBT power semiconductor devices.
Description
Technical field
Filled the present invention relates to IGBT power semiconductor devices field, more particularly to a kind of general protective circuit, integrated protection
Put and Plastic packaging apparatus.
Background technology
Current IGBT power semiconductor devices failure, damage principal mode have excess temperature, excessively stream and short circuit.Cause IGBT electric power
What semiconductor devices excess temperature was damaged is the heat fatigue phenomenon of device, and reason has heat dissipation design improper, and drive circuit design is unreasonable,
Change that external world's load occurs etc..The reason for forming IGBT power semiconductor devices excessively stream, Damage by Short Circuit is that load isolation is bad,
Shut-off crest voltage that bridge short circuit and inductive load caused by external impurities occur etc..Disabling damage form above has been wrapped
More than 95% disabling damage scope of IGBT power semiconductor devices is contained.
It is particularly to be noted that IGBT power semiconductor devices composition multi-chip associated working, such as inversion, frequency conversion,
During 3 level PWM Large Copacity frequency transmission device of AC-DC-AC, as long as having an IGBT power semiconductor devices damage, Jiu Huiyin
Play the damage of integral module.
IGBT power semiconductor devices must be long-term, highly reliable work, to ensure safety.It is current general all in electric power half
Conductor device periphery sets some drive circuits, including various protection circuits.But such drive circuit or specialty IC drivers
Do not worked with IGBT power semiconductor devices under same physical environment.Therefore to the various disabling damage senses produced by device
Speed is answered, comprehensive treatment capability etc. has inconsistency.
The content of the invention
There is provided a kind of general protective circuit, comprehensive protector and packaged by plastic for limitation of the invention for prior art
Put, applied to IGBT power semiconductor devices, it is intended to really realize not against peripheral circuit, be directly packaged into from igbt chip
Device completes comprehensive precisely protection, improves the power density and reliability of IGBT power semiconductor devices.
Above-mentioned technical proposal is specifically included：
A kind of general protective circuit, applied to IGBT power semiconductor devices, wherein, including input protection circuit, excess temperature
Protection circuit and short circuit over-current protection circuit；
The input of the input protection circuit connects the input control voltage of the IGBT power semiconductor devices, described
The output end of input protection circuit connects the input of the thermal-shutdown circuit；
The output end of the thermal-shutdown circuit connects the input of the short circuit over-current protection circuit；
The output end of the short circuit over-current protection circuit connects the input of the IGBT power semiconductor devices；
The input protection circuit is used for the input control voltage for protecting the IGBT power semiconductor devices；
The thermal-shutdown circuit is used for the working junction temperature rapid increase for avoiding the IGBT power semiconductor devices；
The excessively stream short circuit current be used for make the IGBT power semiconductor devices when there is excessively stream or short circuit phenomenon not
It is damaged.
Preferably, in above-mentioned general protective circuit, the input protection circuit includes；
P-channel field-effect transistor (PEFT) pipe, the input of the drain electrode connection input protection circuit of the P-channel field-effect transistor (PEFT) pipe
End, source electrode connects the output end of the input protection circuit, and grid connects a first node；
The input of the drain electrode connection input protection circuit of the N-channel FET, source electrode connection is described
The output end of input protection circuit；
First resistor, is connected between the input of the input protection circuit and the first node；
Second resistance, is connected between the output end of the input protection circuit and first node.
Preferably, in above-mentioned general protective circuit, the thermal-shutdown circuit includes：
Negative temperature sensor, one end connects the output end of the input protection circuit, and the other end connects a second section
Point；
The positive temperature sensor, the other end connects the no-voltage end of the IGBT power semiconductor devices；
First isolating diode, input connects the Section Point, and output end connects the trigger electrode of an one-way SCR；
The positive pole of the one-way SCR connects the input control voltage of the IGBT power semiconductor devices, described
The negative pole of one-way SCR connects the no-voltage end.
Preferably, in above-mentioned general protective circuit, the short circuit over-current protection circuit includes；
First divider resistance, between the output end and one the 3rd node that connect the thermal-shutdown circuit；
Second divider resistance, is connected between the 3rd node and a fourth node；
3rd divider resistance, is connected between the fourth node and the no-voltage end；
Second isolating diode, positive pole connects the fourth node, and negative pole connects the described of first isolating diode
Trigger electrode；
Fast recovery diode, positive pole connects the 3rd node, and negative pole connects the IGBT power semiconductor devices
The input；
Delay capacitor, is connected in parallel on the two ends of the 3rd divider resistance.
A kind of comprehensive protector, applied to IGBT power semiconductor devices, wherein, including electronic component, the electricity
Sub- component includes the general protective circuit described in the claim 1-4；
The comprehensive protector also includes；
Circuit substrate, is fixedly installed on the IGBT power semiconductor devices, and multiple electronic components are arranged respectively
It is listed in the intermediate region of the circuit substrate；
Binding post is drawn, the both sides of the circuit substrate are fixedly installed on.
Preferably, in above-mentioned comprehensive protector, the circuit substrate is printed circuit board；
The circuit substrate is arranged at the top of the IGBT power semiconductor devices.
Preferably, in above-mentioned comprehensive protector, circuit substrate is copper-clad plate；
The circuit substrate insertion is encapsulated in the inside of the IGBT power semiconductor devices.
Preferably, in above-mentioned comprehensive protector, the extraction binding post is provided with the first terminals, the second wiring
End, the 3rd terminals, the 4th terminals；
First terminals access the input control voltage of the IGBT power semiconductor devices；
Second terminals, the 3rd terminals, the 4th terminals connect the corresponding IGBT respectively
Power semiconductor device；
First terminals are set respectively with the 3rd terminals relative to the region that the electronic component is arranged
In the both sides of the circuit substrate；
Second terminals are arranged at the homonymy of the circuit substrate with first terminals；
4th terminals are arranged at the homonymy of the circuit substrate with the 3rd terminals.
Preferably, in above-mentioned comprehensive protector, the extraction binding post is provided with the first terminals, the second wiring
End, the 3rd terminals, the 4th terminals；
First terminals access the input control voltage of the IGBT power semiconductor devices；
Second terminals, the 3rd terminals, the 4th terminals connect the corresponding IGBT respectively
Power semiconductor device.
First terminals, second terminals, the 3rd terminals and the 4th terminals are respectively provided with
In the same side of the circuit substrate.
A kind of Plastic packaging apparatus, applied to IGBT power semiconductor devices, wherein, including it is as claimed in claim 5 comprehensive
Protection device, in addition to：
Radiator；
Connecting bolt, the comprehensive protector is by the connecting bolt cuff on the radiator；
Plastic packaging pipe, the comprehensive protector is connected by the connecting bolt；
Wiring is drawn, the comprehensive protector is connected by the connecting bolt.
Preferably, in above-mentioned Plastic packaging apparatus, the direction set on the radiator along the connecting bolt is provided with a company
Connect hole；
The comprehensive protector is provided with the first lead；
The plastic packaging pipe is provided with the second lead；
First lead is connected with second lead by the connecting hole.
Above-mentioned technical proposal has the following advantages that or beneficial effect：Really realize not against peripheral circuit, directly from IGBT
Chip package into device complete comprehensive precisely protection, improve the power density and reliability of IGBT power semiconductor devices.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, the present invention and its feature, outside
Shape and advantage will become more apparent.It should be noted that associated components are not drawn to scale in accompanying drawing, it is preferred that emphasis is
The purport of the present invention is shown.
During Fig. 1 is preferred embodiments of the present invention, a kind of general protective circuit figure；
During Fig. 2 is preferred embodiments of the present invention, a kind of schematic diagram of comprehensive protector；
During Fig. 3 is preferably another embodiment of the present invention, a kind of schematic diagram of comprehensive protector；
During Fig. 4 is preferred embodiments of the present invention, a kind of structural representation of Plastic packaging apparatus.
Embodiment
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings, but not as the limit of the present invention
It is fixed.
As shown in figure 1, a kind of general protective circuit, applied to IGBT power semiconductor devices, including input protection circuit
1st, thermal-shutdown circuit 2 and short circuit over-current protection circuit 3；
The input of input protection circuit 1 connects the input control voltage 4 of IGBT power semiconductor devices, input protection electricity
The output end 12 on road 2 connects the input of thermal-shutdown circuit 2；
The output end 17 of thermal-shutdown circuit 2 connects the input of short circuit over-current protection circuit 3；
The input 19 of the output end connection IGBT power semiconductor devices 22 of short circuit over-current protection circuit 3；
Input protection circuit 1 is used for the input control voltage 4 for protecting IGBT power semiconductor devices 22；
Thermal-shutdown circuit 2 is used for the working junction temperature rapid increase for avoiding IGBT power semiconductor devices 22；
Excessively stream short circuit current 3 is used to make IGBT power semiconductor devices 22 not damaged when there is excessively stream or short circuit phenomenon
It is bad.
Input protection circuit 1 includes；
P-channel field-effect transistor (PEFT) pipe 9, the input of the drain electrode connection input protection circuit 1 of P-channel field-effect transistor (PEFT) pipe 9, source electrode connection
The output end 12 of input protection circuit 1, grid connects a first node 7；
The input of the drain electrode connection input protection circuit 1 of N-channel FET 10, source electrode connection input protection circuit 1
Output end 12；
First resistor 6, is connected between the input of input protection circuit 1 and first node 7；
Second resistance 11, is connected between the output end 12 of input protection circuit 1 and first node 7.
The input control voltage 4 of IGBT power semiconductor devices 22 is in order to reliably trigger, drive IGBT power semiconductor devices
Part 22, usually positive 15V and negative 5V square-wave pulses, frequency is from 10KHz to 40KHz, and the modulated controls of even higher PWM are touched
Signal.After 4 input protection circuit 1 of control voltage is inputted, because input protection circuit 1 is by P-channel field-effect transistor (PEFT) pipe 9, N ditches
Road FET 10, first resistor 6, second resistance 11 are constituted, the source electrode of P-channel field-effect transistor (PEFT) pipe 9 and N-channel FET 10,
Grid, drain electrode all mutual connections, drain electrode access input control voltage 4, are acted in first resistor 6 and the partial pressure of second resistance 11
Under, P-channel field-effect transistor (PEFT) pipe 9 can be turned on reliably with N-channel FET 10 to be connected, and source electrode is the output end of input protection circuit
12.So either positive 15V or negative 5V control voltages can respectively by N-channel FET 9 and P-channel field-effect transistor (PEFT) pipe 10,
It is directly connected to the work of the trigger electrode of IGBT power semiconductor devices 22, triggered as normal or cut-off IGBT power semiconductor devices 22
Make.
Thermal-shutdown circuit 2 includes：
Negative temperature sensor 13, one end connects the output end 12 of input protection circuit 1, and the other end connects a Section Point 8；
Positive temperature sensor 14, the no-voltage end 5 of other end connection IGBT power semiconductor devices 22；
Negative temperature sensor 13, positive temperature sensor 14 can be quickly the working junction temperatures of IGBT power semiconductor devices 22
It is transmitted to temperature sensor.
First isolating diode 15, input connection Section Point 8, output end connects the triggering of an one-way SCR 16
Pole；
The input control voltage 4 of the positive pole connection IGBT power semiconductor devices 22 of one-way SCR 16, one-way SCR
16 negative pole connection no-voltage end 5.
General positive temperature sensor or negative temperature sensor has a temperature conduction delayed sensitive time, about 5 to 7
Second, the negative temperature sensor 13 in the technical program and the tandem working of positive temperature sensor 14 have been used, has been risen under temperature action
One push away, drawing effect, it is rapid within 0.7 to 1.5 seconds time to induce an operating voltage and act on touching for one-way SCR 16
Pole is sent out, one-way SCR 16 is turned on, the input control voltage 4 of input IGBT power semiconductor devices 22 is directly conducting to zero
Voltage end 5, makes IGBT power semiconductor devices 22 end work, while also making the P-channel field-effect transistor (PEFT) pipe 9 of input protection circuit 1
It is stopped with N-channel FET 10.Due to the working characteristics of one-way SCR 16, irrecoverability will arrive stopping always
Driving, restarting could work, it is ensured that IGBT power semiconductor devices 22 is safe and reliable, be not damaged by.
Flow short-circuit protection circuit 3 includes；
Between first divider resistance 18, the node 20 of output end 17 and 1 the 3rd for connecting thermal-shutdown circuit 2；
Second divider resistance 23, is connected between the 3rd node 20 and a fourth node 24；
3rd divider resistance 26, is connected between fourth node 24 and no-voltage end 5；
Second isolating diode 25, positive pole connection fourth node 24, negative pole connects the trigger electrode of the first isolating diode 15；
Fast recovery diode 21, positive pole connects the 3rd node 20, and negative pole connects the defeated of IGBT power semiconductor devices 22
Enter end 19；
Delay capacitor 37, is connected in parallel on the two ends of the 3rd divider resistance 26.
Tube voltage drop about 3V during IGBT 22 normal works of power semiconductor device, the 3rd node 20 obtains fast recovery diode
16 clamp voltages start one-way SCR 16 in 2V or so, the component voltage of fourth node 24 by the way that the second isolating diode 25 is not enough
Work.Once occur excessively stream (150-200% for exceeding normal load electric current) or short circuit, at this moment IGBT power semiconductor devices
22 bear high current and move back saturation, the pressure drop rapid increase of IGBT power semiconductor devices pipe 22, when rising to more than 7V, and the 4th
The component voltage of node 24 starts one-way SCR 16 by the second isolating diode 25 and worked enough, leads one-way SCR 16
It is logical, the input control voltage 4 of input IGBT power semiconductor devices 22 is directly conducting to no-voltage end 5, so that IGBT is electric
Power semiconductor devices 22 ends work.But because delay capacitor 37 is present, the also delay of the microseconds of t=R6X C1 about 5 is slow to close
Disconnected IGBT power semiconductor devices 22, it is ensured that IGBT power semiconductor devices 22 are not born by inductive load in quick cut-off
High counter electromotive force impact, it is safe and reliable, it is not damaged by.
Excessively stream, short-circuit protection start operating current can be set as 150% according to different semiconductor electric chip rated capacities,
200%th, 300% etc., delay deadline can also adjust, and to avoid, there may be excessive misoperation.
As shown in Figures 2 and 3, a kind of comprehensive protector, applied to IGBT power semiconductor devices, including electronics member device
Part 27, electronic component 27 includes the general protective circuit in claim 1-4；
Comprehensive protector also includes；
Circuit substrate 28, is fixedly installed on IGBT power semiconductor devices 22, and multiple electronic components 27 are arranged respectively
In the intermediate region of circuit substrate 28；
Binding post is drawn, the both sides of circuit substrate 28 are fixedly installed on.
Circuit substrate 28 can be printed circuit board；
Now circuit substrate 28 is arranged at the top of IGBT power semiconductor devices 22.
Circuit substrate 28 can also be copper-clad plate；
Now circuit substrate 28 is embedded in the inside for being encapsulated in IGBT power semiconductor devices 22.
Draw binding post and be provided with the first terminals 29, the second terminals 30, the 3rd terminals 31, the 4th terminals
32；
The input control voltage 4 of first terminals 29 access IGBT power semiconductor devices 22；
As shown in Fig. 2 when comprehensive protector is suitable for DBC encapsulation, circuit substrate 28 can be printed circuit board,
Can be copper-clad plate, now, the second terminals 30, the 3rd terminals 31, the 4th terminals 32 connect corresponding IGBT respectively
Power semiconductor device 22；
First terminals 29 and the 3rd terminals 31 are respectively arranged at circuit base relative to the region that electronic component is arranged
The both sides of plate 28；
Second terminals 30 and the first terminals 29 are arranged at the homonymy of circuit substrate 28；
4th terminals 32 and the 3rd terminals 31 are arranged at the homonymy of circuit substrate 28.
As shown in figure 3, when comprehensive protector is suitable for the encapsulation of plastic packaging pipe, circuit substrate 28 is printed circuit board, this
When, the second terminals 30, the 3rd terminals 31, the 4th terminals 32 connect corresponding IGBT power semiconductor devices respectively
22。
First terminals 29, the second terminals 30, the 3rd terminals 31 and the 4th terminals 32 may be contained within circuit base
The same side of plate 28.
As shown in figure 4, a kind of Plastic packaging apparatus, applied to IGBT power semiconductor devices, including it is as claimed in claim 5 comprehensive
Protection device 33, in addition to：
Radiator 35；
Connecting bolt 36, comprehensive protector is by the cuff of connecting bolt 36 on radiator 35；
Plastic packaging pipe 34, comprehensive protector is connected by connecting bolt 36；
Wiring 35 is drawn, comprehensive protector is connected by connecting bolt 36.
The direction set on radiator 35 along connecting bolt 36 is provided with a connecting hole 37；
Comprehensive protector 33 is provided with the first lead 38；
Plastic packaging pipe 34 is provided with the second lead 39；
First lead 38 is connected with the second lead 39 by connecting hole 37.
The technical program applied to a kind of general protective circuit of IGBT power semiconductor devices, comprehensive protector and
Plastic packaging apparatus because semiconductor electric chip integrated level is high, can be applied to operating current from it is a few peace to several kilo-amperes, operating voltage from
Several hectovolts to several kilovolts of device it is a wide range of in apply, can also be widely used at three-phase circuit (technical grade), to inverter,
High-power frequency conversion, AC-DC-AC driving are with the relatively effective real protection from chip-scale, so that it is guaranteed that load and device
It is safe and reliable.
It should be appreciated by those skilled in the art that those skilled in the art combine prior art and above-described embodiment can be with
Various change example is realized, such change case has no effect on the substantive content of the present invention, will not be described here.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, wherein the equipment and structure be not described in detail to the greatest extent are construed as giving reality with the common mode in this area
Apply；Any those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above
Methods and techniques content make many possible variations and modification to technical solution of the present invention, or be revised as equivalent variations etc.
Embodiment is imitated, this has no effect on the substantive content of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit of the present invention still falls within the present invention to any simple modifications, equivalents, and modifications made for any of the above embodiments
In the range of technical scheme protection.
Claims (11)
1. a kind of general protective circuit, applied to IGBT power semiconductor devices, it is characterised in that including input protection circuit,
Thermal-shutdown circuit and short circuit over-current protection circuit；
The input of the input protection circuit connects the input control voltage of the IGBT power semiconductor devices, the input
The output end of protection circuit connects the input of the thermal-shutdown circuit；
The output end of the thermal-shutdown circuit connects the input of the short circuit over-current protection circuit；
The output end of the short circuit over-current protection circuit connects the input of the IGBT power semiconductor devices；
The input protection circuit is used for the input control voltage for protecting the IGBT power semiconductor devices；
The thermal-shutdown circuit is used for the working junction temperature rapid increase for avoiding the IGBT power semiconductor devices；
The excessively stream short circuit current is used to make the IGBT power semiconductor devices not damaged when there is excessively stream or short circuit phenomenon
It is bad.
2. the general protective circuit as shown in claim 1, it is characterised in that the input protection circuit includes；
P-channel field-effect transistor (PEFT) pipe, the input of the drain electrode connection input protection circuit of the P-channel field-effect transistor (PEFT) pipe, source
Pole connects the output end of the input protection circuit, and grid connects a first node；
The input of the drain electrode connection input protection circuit of the N-channel FET, source electrode connects the input
The output end of protection circuit；
First resistor, is connected between the input of the input protection circuit and the first node；
Second resistance, is connected between the output end of the input protection circuit and first node.
3. the general protective circuit as shown in claim 1, it is characterised in that the thermal-shutdown circuit includes：
Negative temperature sensor, one end connects the output end of the input protection circuit, and the other end connects a Section Point；
The positive temperature sensor, the other end connects the no-voltage end of the IGBT power semiconductor devices；
First isolating diode, input connects the Section Point, and output end connects the trigger electrode of an one-way SCR；
The positive pole of the one-way SCR connects the input control voltage of the IGBT power semiconductor devices, described unidirectional
The negative pole of controllable silicon connects the no-voltage end.
4. the general protective circuit as shown in claim 1, it is characterised in that the short circuit over-current protection circuit includes；
First divider resistance, between the output end and one the 3rd node that connect the thermal-shutdown circuit；
Second divider resistance, is connected between the 3rd node and a fourth node；
3rd divider resistance, is connected between the fourth node and the no-voltage end；
Second isolating diode, positive pole connects the fourth node, and negative pole connects the triggering of first isolating diode
Pole；
Fast recovery diode, positive pole connects the 3rd node, and negative pole connects the described of the IGBT power semiconductor devices
Input；
Delay capacitor, is connected in parallel on the two ends of the 3rd divider resistance.
5. a kind of comprehensive protector, applied to IGBT power semiconductor devices, it is characterised in that including electronic component, institute
Stating electronic component includes the general protective circuit described in the claim 1-4；
The comprehensive protector also includes；
Circuit substrate, is fixedly installed on the IGBT power semiconductor devices, and multiple electronic components are arranged in respectively
The intermediate region of the circuit substrate；
Binding post is drawn, the both sides of the circuit substrate are fixedly installed on.
6. comprehensive protector as claimed in claim 5, it is characterised in that the circuit substrate is printed circuit board；
The circuit substrate is arranged at the top of the IGBT power semiconductor devices.
7. comprehensive protector as claimed in claim 5, it is characterised in that the circuit substrate is copper-clad plate；
The circuit substrate insertion is encapsulated in the inside of the IGBT power semiconductor devices.
8. comprehensive protector as claimed in claims 6 or 7, it is characterised in that the extraction binding post is provided with first
Terminals, the second terminals, the 3rd terminals, the 4th terminals；
First terminals access the input control voltage of the IGBT power semiconductor devices；
Second terminals, the 3rd terminals, the 4th terminals connect the corresponding IGBT electric power respectively
Semiconductor devices；
First terminals are respectively arranged at institute with the 3rd terminals relative to the region that the electronic component is arranged
State the both sides of circuit substrate；
Second terminals are arranged at the homonymy of the circuit substrate with first terminals；
4th terminals are arranged at the homonymy of the circuit substrate with the 3rd terminals.
9. comprehensive protector as claimed in claim 6, it is characterised in that the extraction binding post is provided with the first wiring
End, the second terminals, the 3rd terminals, the 4th terminals；
First terminals access the input control voltage of the IGBT power semiconductor devices；
Second terminals, the 3rd terminals, the 4th terminals connect the corresponding IGBT electric power respectively
Semiconductor devices.
First terminals, second terminals, the 3rd terminals and the 4th terminals may be contained within institute
State the same side of circuit substrate.
10. a kind of Plastic packaging apparatus, applied to IGBT power semiconductor devices, it is characterised in that including as claimed in claim 5
Comprehensive protector, in addition to：
Radiator；
Connecting bolt, the comprehensive protector is by the connecting bolt cuff on the radiator；
Plastic packaging pipe, the comprehensive protector is connected by the connecting bolt；
Wiring is drawn, the comprehensive protector is connected by the connecting bolt.
11. Plastic packaging apparatus as claimed in claim 10, it is characterised in that set on the radiator along the connecting bolt
Direction is provided with a connecting hole；
The comprehensive protector is provided with the first lead；
The plastic packaging pipe is provided with the second lead；
First lead is connected with second lead by the connecting hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710543164.2A CN107196273B (en) | 2017-07-05 | 2017-07-05 | Comprehensive protection circuit, comprehensive protection device and plastic packaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710543164.2A CN107196273B (en) | 2017-07-05 | 2017-07-05 | Comprehensive protection circuit, comprehensive protection device and plastic packaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107196273A true CN107196273A (en) | 2017-09-22 |
| CN107196273B CN107196273B (en) | 2020-09-15 |
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ID=59880355
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710543164.2A Active CN107196273B (en) | 2017-07-05 | 2017-07-05 | Comprehensive protection circuit, comprehensive protection device and plastic packaging device |
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| Country | Link |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE1001956A6 (en) * | 1988-05-17 | 1990-04-24 | Alsthom Internat Sa Nv | System for powering, at an approximately constant voltage level, a minimumcoil installed on a switch |
| CN202435330U (en) * | 2011-12-28 | 2012-09-12 | 重庆长安汽车股份有限公司 | Power module driving protection system of permanent magnet synchronous motor controller |
| EP2752980A1 (en) * | 2013-01-08 | 2014-07-09 | Vestel Elektronik Sanayi ve Ticaret A.S. | Undervoltage cut-off switch for use between load and power supply with output filter capacitor |
| CN207339248U (en) * | 2017-07-05 | 2018-05-08 | 上海一旻成峰电子科技有限公司 | A kind of general protective circuit, comprehensive protector and Plastic packaging apparatus |
-
2017
- 2017-07-05 CN CN201710543164.2A patent/CN107196273B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE1001956A6 (en) * | 1988-05-17 | 1990-04-24 | Alsthom Internat Sa Nv | System for powering, at an approximately constant voltage level, a minimumcoil installed on a switch |
| CN202435330U (en) * | 2011-12-28 | 2012-09-12 | 重庆长安汽车股份有限公司 | Power module driving protection system of permanent magnet synchronous motor controller |
| EP2752980A1 (en) * | 2013-01-08 | 2014-07-09 | Vestel Elektronik Sanayi ve Ticaret A.S. | Undervoltage cut-off switch for use between load and power supply with output filter capacitor |
| CN207339248U (en) * | 2017-07-05 | 2018-05-08 | 上海一旻成峰电子科技有限公司 | A kind of general protective circuit, comprehensive protector and Plastic packaging apparatus |
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| Publication number | Publication date |
|---|---|
| CN107196273B (en) | 2020-09-15 |
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