CN105471415A - Intelligent solid state relay - Google Patents
Intelligent solid state relay Download PDFInfo
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- CN105471415A CN105471415A CN201610017729.9A CN201610017729A CN105471415A CN 105471415 A CN105471415 A CN 105471415A CN 201610017729 A CN201610017729 A CN 201610017729A CN 105471415 A CN105471415 A CN 105471415A
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- state relay
- intelligent solid
- resistance
- semiconductor device
- power semiconductor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
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Abstract
The invention provides an intelligent solid state relay, comprising a whole aluminum alloy heat dissipation housing, an installation substrate, a metal heat-conducting plate, a function induction PCB, a control panel, a current induction sensor, and a power semiconductor device, wherein the power semiconductor device possesses a leading-out terminal, and is fixed on the DBC; the DBC is directly welded on the whole aluminum alloy heat dissipation housing; a current induction sensor circuit sleeves the leading-out terminal; the function induction PCB is fixed to the leading-out terminal; the leading-out terminal and a PCB leading-out line are both in connection with the control panel. The intelligent solid state relay can reasonably sense and analyze current, voltage and temperature of work objective conditions, perform effective, and fast response and effective treatment, and possess the comprehensive capability of fully protecting intelligent solid state relay and load safety, and operating with high reliability.
Description
Technical field
The present invention relates to a kind of intelligent solid-state relay, possess the intelligent solid-state relay of automatic protection functions, have and control the multiple its load form of AC single phase, AC three-phase and direct current, intelligent solid-state relay can be applicable to the occasion such as industrial motor, controlled resistive heater.By setpoint power output, accurate control load power, be used for regulating temperature, rotating speed, flow, brightness etc.And have one group of signal of load operating condition exporting intelligent solid-state relay to control centre and drive, to meet the needs that industrial automation is produced.
Background technology
Current various old-fashioned electromagnetic type relay cannot meet the requirement of the industrial revolution, and except volume is very large, the important huge electromagnetic interference that also can operationally produce, eliminates.The various solid-state relays of current routine are brought into use, but this kind of solid-state relay still has various shortcoming, volume or bigger than normal, and reliability is weak.This is for requiring highly reliable equipment or mortal wound.
Conventional solid relay failure, damage principal mode have excess temperature, short circuit and overvoltage.What cause conventional solid relay excess temperature to damage is the thermal fatigue phenomenon of device inside, and reason has heat dissipation design improper, and drive circuit design is unreasonable, the change etc. that extraneous load occurs.The reason of solid-state relay Damage by Short Circuit is caused to be that load isolation is bad, the short out road of bridge etc. that external impurities causes.The reason of solid-state relay excessive pressure damages is caused to be that busbar voltage rises, the shutoff crest voltage etc. that extraneous noise (lightning surge) and inductive load occur.Above disabling damage form has contained the disabling damage scope of more than 95% of solid-state relay.
Solid-state relay is long-term, highly reliable work necessarily, to guarantee safety.Currently generally all some various protective circuits are set in solid-state relay periphery.But this type of protective circuit device or professional IC driver do not work under Same Physical environment with solid-state relay.Therefore to the various disabling damage induction speed that device produces, there is inconsistency in comprehensive treatment capability etc.
The current popularization along with industrial 4.0 concepts, the control assembly all to intelligence manufacture equipment it is also proposed new requirement, needs a real-time communication control signal reliably associated with control centre.
Summary of the invention
Object of the present invention aims to provide a kind of intelligent solid-state relay, possesses comprehensive protection function and the operating state of device and load can be fed back to control centre in time, to overcome the existing defects of above-mentioned prior art.
The invention provides a kind of intelligent solid-state relay, comprise, the induction of integral Al-alloy heat-dissipating casing, installation base plate, metal guide hot plate, function pcb board, control board, electric current inductive pick-up, power semiconductor device; Wherein power semiconductor device has leading-out terminal; Power semiconductor device is fixed on installation base plate; Installation base plate is directly welded on integral Al-alloy heat-dissipating casing; Electric current induction sensing circuit is sleeved on leading-out terminal; Function induction pcb board is fixed on leading-out terminal; Last leading-out terminal is all connected with control board with function induction pcb board lead-out wire.
Further, the invention provides a kind of intelligent solid-state relay, such feature can also be had: integral Al-alloy heat-dissipating casing, and be connected with at power semiconductor device upper metal heat-conducting plate, form a heat transfer closed-loop path, and have good electromagnetic compatibility (EMC) antijamming capability.
Further, the invention provides a kind of intelligent solid-state relay, such feature can also be had: installation base plate is ceramic copper-clad plate, and installation base plate is directly welded on integral Al-alloy heat-dissipating casing.
Further, the invention provides a kind of intelligent solid-state relay, such feature can also be had: power semiconductor device is enhancement mode controlled silicon chip group or High Performance Insulation transistor npn npn chipset.
Further, the invention provides a kind of intelligent solid-state relay, such feature can also be had: function induction pcb board is provided with excess voltage protection and thermal-shutdown circuit.
Further, the invention provides a kind of intelligent solid-state relay, such feature can also be had: adopt silica dioxide granule to mix High-heat-conductiviinsulation insulation material by device package with IC special glue.
Further, the invention provides a kind of intelligent solid-state relay, such feature can also be had: electric current induction sensing circuit comprises: regulating resistance, output resistance, small-sized rectifier bridge stack, unidirectional triggering controllable silicon, electric current inductive pick-up and optocoupler; Regulating resistance is connected in parallel on the two ends of the coil of electric current inductive pick-up; The input of small-sized rectifier bridge stack is connected with the two ends of coil, and output is connected with the input of optocoupler; Unidirectional triggering silicon controlled positive pole is connected with an output of the first output, optocoupler; Negative pole is connected with the second output, trigger electrode is connected with another output of optocoupler through output resistance.
Further, the invention provides a kind of intelligent solid-state relay, such feature can also be had: excess voltage protection comprises piezo-resistance, current-limiting resistance, bidirectional trigger diode and light-emitting diode; Piezo-resistance is connected in parallel on power semiconductor device; After the positive pole series connection of current-limiting resistance, bidirectional trigger diode, light-emitting diode, in parallel with piezo-resistance.
Further, the invention provides a kind of intelligent solid-state relay, can also have such feature: thermal-shutdown circuit comprises two temperature sensors, next-door neighbour's power semiconductor device is arranged.
In addition, the invention provides a kind of intelligent solid-state relay, such feature can also be had: light-emitting diode is in parallel with a small-sized rectifier bridge stack, by exporting a DC operation status signal after rectification, feeding back to control centre.
Accompanying drawing explanation
Fig. 1 is the structural representation of intelligent solid-state relay.
Fig. 2 is the circuit diagram of AC single phase intelligent solid-state relay.
Fig. 3 is the structural representation of AC three-phase intelligent solid-state relay.
Fig. 4 be DC intelligent solid-state relay circuit diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
Embodiment one
Fig. 1 is the structural representation of intelligent solid-state relay.
As shown in Figure 1, intelligent solid-state relay construction comprises: integral Al-alloy heat-dissipating casing 1, soldering-tin layer 2, installation base plate (DBC) 3, metal guide hot plate 4, function induction pcb board 5, leading-out terminal 6, control board 7, electric current inductive pick-up 8, semiconductor electric chip group 9 form.
Semiconductor electric chip group 9 solidified welding is on installation base plate (DBC) 3, semiconductor electric chip group 9 can be great power bidirectional controllable silicon, also can be the enhancement power control device that two high-power one-way SCR reverse parallel connections are formed, all can be applicable to AC control circuit above.Can also be high-power High Performance Insulation transistor npn npn (IGBT) or high-power FET (MOS), be applied to DC control circuit.Semiconductor electric chip group 9 can form single core group (exchanging unidirectional or DC application), twin-core group (exchanging unidirectional enhancement mode), three core group (three-phase alternating current) and six core groups (three-phase alternating current enhancement mode) by difference in functionality.In order to strengthen the calorific intensity of installation base plate (DBC) 3, unsuitable multicore, with one piece of substrate, is no more than at most three core.The soldering-tin layer 2 that the installation base plate welding chipset (DBC) 3 is formed by middle temperature tin slurry is directly welded on integral Al-alloy heat-dissipating casing 1, can area of dissipation be increased, improve power density.
Above semiconductor electric chip group 9, arrange one block of metal guide hot plate 4, two ends are closely connected with integral Al-alloy heat-dissipating casing 1, form a heat transfer closed-loop path.Such energy is very effective, and the working temperature in semiconductor electric chip group 9, we are called junction temperature, are transmitted to integral Al-alloy heat-dissipating casing 1 fast, make junction temperature synchronous with shell temperature.Improve the electrical power density of intelligent solid-state relay.And effectively shield the electromagnetic interference of generation when semiconductor electric chip group 9 works and be not subject to external electromagnetic wave action, there is good electromagnetic compatibility (EMC) function.
Using the leading-out terminal 6 of semiconductor electric chip group 9 as support, electric current inductive pick-up 8 is set in.According to different job requirements, function needs, can make different function induction pcb boards 5 again, in the present embodiment, excess voltage protection, thermal-shutdown circuit and short-circuit protection circuit are just arranged on function induction pcb board 5.Function induction pcb board 5 is also using the leading-out terminal 6 of semiconductor electric chip group 9 as support; can multilayer polylith; three-dimensional installation; in the present embodiment; induction pcb board 5 is two-layer three pieces; be respectively thermal-shutdown circuit (5-1) and excess voltage protection, to export (5-2) be one deck two pieces to control signal, short circuit (overcurrent) protective circuit (8) be that independent one piece of function responds to pcb board.Finally encapsulate by silica dioxide granule and IC special glue mixing High-heat-conductiviinsulation insulation material.
Fig. 2 is the circuit diagram of AC single phase intelligent solid-state relay.
As shown in Figure 2, connect with the circuit of semiconductor electric chip group (AC single phase enhancement mode controlled silicon chip group) and be described, semiconductor electric chip group 9 (AC single phase enhancement mode controlled silicon chip group) is made up of two high-power unidirectional controllable silicon S CR1, SCR2 reverse parallel connection.
Thermal-shutdown circuit (5-1) comprises the first temperature sensor R1 and the second temperature sensor R2.First temperature sensor R1 is PCT temperature sensor, and one end is connected with control board 7 first input end Vin1, and the other end is connected with the trigger electrode of the unidirectional controllable silicon S CR1 of enhancement mode controlled silicon chip.
Second temperature sensor R2 is also PCT temperature sensor, and one end is connected with control board 7 second input Vin2, and the other end is connected with the trigger electrode of the unidirectional controllable silicon S CR2 of enhancement mode controlled silicon chip.First temperature sensor R1, the second temperature sensor R2 are separately positioned on the top of unidirectional controllable silicon S CR1, SCR2.
Excess voltage protection and control signal export (5-2) and comprising: piezo-resistance R3, current-limiting resistance R4, bidirectional trigger diode D1, light-emitting diode D2 and small-sized rectifier bridge stack D3.
Piezo-resistance R3 is connected in parallel on enhancement mode controlled silicon chip, and two ends are connected with two output tie points of two high-power unidirectional controllable silicon S CR1, SCR2 respectively.
After the positive pole series connection of current-limiting resistance R4, bidirectional trigger diode D1, light-emitting diode D2, in parallel with piezo-resistance R3, namely in parallel with enhancement mode controlled silicon chip.
Light-emitting diode D2 is connected with small-sized rectifier bridge stack D3 input, after over commutation, export DC operation status signal Vout3, a Vout4.
Electric current induction sensing circuit 8 comprises: regulating resistance R5, output resistance R6, small-sized rectifier bridge stack D4, unidirectional triggering controllable silicon SCR 3, electric current inductive pick-up L and optocoupler IC.
The coil of electric current inductive pick-up L is enclosed within the leading-out terminal of enhancement mode controlled silicon chip.Regulating resistance R5 is connected in parallel on the two ends of coil.The small-sized input of rectifier bridge stack D4 is connected with the two ends of coil, and output is connected with the input of optocoupler IC.The positive pole of unidirectional triggering controllable silicon SCR 3 is connected with an output of the first output end vo ut1, optocoupler IC; Negative pole is connected with the second output end vo ut2, trigger electrode is connected with another output of optocoupler IC through output resistance R6.
Input control signal Vin1, Vin2 all in circuit diagram are connected with control board 7 with output signal Vout1, Vout2, Vout3, Vout4.
Two leading-out terminals 6 are connected with two unidirectional controllable silicon S CR1 of enhancement mode controlled silicon chip, the tie point of SCR2 and connection control plate respectively.
The course of work of the general protective circuit of AC single phase intelligent solid-state relay:
The signal of telecommunication of a control switch is obtained by control board, input control signal opened or turn off is held from first input end Vin1 and the second input Vin2, by the first temperature sensor R1, second temperature sensor R2, trigger two unidirectional controllable silicon S CR1, SCR2, namely enhancement mode controlled silicon chip, obtain signal and drive conducting or the work of shutoff main circuit, PTC temperature sensor R1, R2 is arranged at two unidirectional controllable silicon S CR1 respectively, the top of SCR2, High-heat-conductiviinsulation insulation material encapsulation is mixed into by silica dioxide granule and IC special glue, the instant real-time chip operating temperature of heat transfer of energy, the resistance value of the first temperature sensor R1 and the second temperature sensor R2 is made to produce respective change with the working temperature of chip.The highest general design temperature is 120 DEG C.As exceeded this design temperature point, unidirectional controllable silicon S CR1, SCR2 just turn off work main circuit.This is also the process of an Automatic-searching heat balance operating current.Namely ensure that semiconductor electric chip can not cross cause thermal damage, autobalance can find a best operating point again.
The Special display absorbing circuit that excess voltage protection is made up of piezo-resistance R3, current-limiting resistance R4, diac D1 and light-emitting diode D2 is formed; the voltage that Absorbable rod is too high and the noise (lightning surge) that external environment condition produces, also have the shutoff crest voltage etc. that inductive load occurs.Also can show the operating state of power semiconductor device in real time.
Overcurrent (short circuit) protective circuit is enclosed within SCR1, SCR2 leading-out terminal, available one by electric current inductive pick-up L coil, also can two.The output voltage of the induction coil of regulating resistance R5 adjustable current inductive pick-up L, a direct voltage is obtained by small-sized rectifier bridge stack D3, optocoupler IC is driven to export, a switching signal Vout1 and Vout2 is obtained by output resistance R6 and unidirectional triggering controllable silicon SCR 3, this is one and is forced shutdown signal, this signal is by the unidirectional triggering SCR control of unidirectional triggering controllable silicon SCR 3, operating characteristic according to this device is reached a conclusion, once there is overcurrent (short circuit) state, must to control load maintenance down after overcurrent (short circuit) protective circuit startup work in device, and turn off input control signal and could work, there is a restarting process, guarantee safety.Overcurrent (short circuit) starts operating current can be set as 150%, 200%, 300% etc., to avoid producing too much misoperation according to different semiconductor electric chip rated capacity.
Embodiment two
Fig. 3 is the structural representation of AC three-phase intelligent solid-state relay.
As shown in Figure 3, the structural representation of AC three-phase intelligent solid-state relay construction and intelligent solid-state relay is similar, comprising: integral Al-alloy heat-dissipating casing 1, soldering-tin layer 2, installation base plate (DBC) 3, metal guide hot plate 4, function induction pcb board 5, leading-out terminal 6, control board 7, electric current inductive pick-up 8, semiconductor electric chip group 9 form.But semiconductor electric chip group 9 by three groups identical and independently semiconductor electric chip group form.
AC three-phase intelligent solid-state relay is made up of three groups of identical AC single phase intelligent solid-state relays.Share one piece of control board, circuit diagram just no longer repeats.Need propose be three-phase intelligent solid-state relay three groups identical and independently semiconductor electric chip group 9 operationally owing to generating heat simultaneously.Interference mutually while of three groups of chip heat, is in worst state under making the heat effect of middle chipset by adjacent two sides.Often other prior to two chip is early than cause thermal damage.At this moment under the effect of metal guide hot plate 4, well the heat balance of intermediate chip is diffused into integral Al-alloy heat-dissipating casing 1, and well can shields the High energy electromagnetic interference of generation.
Fig. 4 be DC intelligent solid-state relay circuit diagram.
As shown in Figure 4, DC intelligent solid-state relay circuit diagram, equally by thermal-shutdown circuit 5-1, excess voltage protection 5-2 and electric current respond to sensing circuit 8 form.
Thermal-shutdown circuit 5-1 comprises the first temperature sensor R1 and the second temperature sensor R2.First temperature sensor R1 is PCT temperature sensor, and the second temperature sensor R2 is NTC temperature sensor.
One end of first temperature sensor R1 is connected with first input end Vin1, the base stage of the other end and High Performance Insulation transistor npn npn IGBT.One end of second temperature sensor R2 is connected with earth terminal GND, the other end also with the base stage of High Performance Insulation transistor npn npn IGBT.
A PWM switch or PLC industry control message is inputted by first input end Vin1, the temperature-control circuit consisted of PTC temperature sensor R1 and NTC temperature sensor R2 drives High Performance Insulation transistor npn npn (IGBT) work, when generation excess temperature phenomenon, be generally also set as 120 DEG C.The resistance value of PTC temperature sensor R1 and NTC temperature sensor R2 can produce respective change with the temperature sensed, PTC is positive temperature sensor R1, increases resistance value with the increase of temperature, and NTC temperature sensor R2 is that resistance value reduces with the increase of temperature.Like this, the grid of High Performance Insulation transistor npn npn IGBT can obtain a more sensitive protection.Automatically a heat balance function can be produced.Intelligence be operated in a suitable operating current.Due to setting up of NTC temperature sensor R2, quite not useful by electrostatic breakdown for ensureing the grid of High Performance Insulation transistor npn npn IGBT yet.Thus the protection making power semiconductor device more perfect.
Excess voltage protection and control signal export (5-2) and comprising: piezo-resistance R3, current-limiting resistance R4, light-emitting diode D2.
Piezo-resistance R3 is connected in parallel on High Performance Insulation transistor npn npn igbt chip collector electrode and emitter, and two ends are connected with two output tie points of High Performance Insulation transistor npn npn IGBT respectively.
After the positive pole series connection of current-limiting resistance R4, light-emitting diode D2, in parallel with piezo-resistance R3, namely in parallel with High Performance Insulation transistor npn npn igbt chip.
Light-emitting diode D2 bis-end exports DC operation status signal Vout3, a Vout4.
Electric current induction sensing circuit 8 comprises: measuring shunt resistance R5, regulating resistance R6, output resistance R7, unidirectional triggering controllable silicon SCR 1 and optocoupler IC.
Overcurrent (short circuit) protective circuit be by with High Performance Insulation transistor npn npn IGBT emitter with meet the measuring shunt resistance R5 that gnd electrode connects and obtain an operating voltage.Optocoupler IC is driven to export by the operating voltage of regulating resistance R6 adjustable measuring shunt resistance R5.Other circuit working principle is identical with embodiment one, no longer repeat specification.
The effect of embodiment and principle
The general disabling damage form of intelligent solid-state relay is excess temperature, short circuit and overvoltage.For intelligent solid-state relay, exactly the temperature of device inside, electric current all to there be is a relative fast and accurate mensuration with voltage, and are effectively controlled at device inside rapidly, to complete the integrated protection to intelligent solid-state relay.According to our product test to current some solid-state relay professional production companies both at home and abroad, excess temperature phenomenon is generally relatively slow in the performance of shell, but in fact excess temperature can produce thermal fatigue, has temperature cycle model and power cycle pattern two kinds.Under temperature cycle model, refer to solid-state relay from start to and finally quit work, there is a temperature changing process (shell temperature) more slowly on device outer case surface.Under power cycle pattern, in device, the variations injunction temperature of chip is frequent, the acute variation all closely related with changed power (junction temperature) of each junction temperature.This is by one of factor of causing solid-state relay excess temperature disabling damage to consider.If try one's best make junction temperature consistent with shell temperature, this extends the decisive significance being in useful life for solid-state relay.Just need, except semiconductor electric chip is by installation base plate (DBC) heat radiation, also needs to arrange metal guide hot plate above chip, form a heat transfer closed-loop path.Two, measuring junction temperature from semiconductor electric chip minimum distance and in addition overheat protector.According to our experiment, overheat protector also can produce a thermally equilibrated phenomenon, namely automatically the electric current exported is declined, is limited in certain scope.This is very useful.This also in a disguised form improves the power density of intelligent solid-state relay.
The intelligent solid-state relay meeting industry 4.0 requirement must have good Electro Magnetic Compatibility (EMC), and electronic equipment neither disturbs miscellaneous equipment, simultaneously also not by the impact of miscellaneous equipment, especially under computer light current condition of work.According to test, relative to with without metal guide hot plate under comparable operating conditions, reduce amount of electromagnetic radiation 85% after having used metal guide hot plate.
For short-circuit failure protection, although the probability produced is not high, the consequence produced is disastrous, must be protected, otherwise will make device permanent damage within the us level time.This is also the reason needing just to obtain fastest response in intelligent solid-state relay device.
Overvoltage fail safe is fairly simple, and the schemes such as available TVS, piezo-resistance and Special display absorbing circuit solve.
Above three kinds of disabling damage form effects to intelligent solid-state relay device superpose often, if the junction temperature of chip of device is 120 DEG C time, when producing overcurrent or short circuit again, the material being interconnected employing between power semiconductor device chip is different, there is the chip of silicon materials, copper or aluminium connecting line, the tin layers of welding and the copper composite surface of insulated substrate, the thermal coefficient of expansion of their various materials is different, will produce stress inconsistent.And overcurrent or short circuit phenomenon exacerbate the frequent temperature rise of device.Be easy to cause power semiconductor device internal injury.So in order to avoid this synergistic effect, effectively must be controlled in intelligent solid-state relay device inside.
Overheat protector and short circuit (overcurrent) protection are all passed through current related with intelligent solid-state relay; we are set by temperature sensor and current sensor in device; in 150% scope of the rated operational current of intelligent solid-state relay, belong to overheat protector scope, exceeding this rated current is exactly the scope that short circuit (overcurrent) is protected.The work of device must be stopped immediately.Intelligent solid-state relay must from being entirely conducting to shutoff (cut-off) state within the us level second time.The power density that can improve intelligent solid-state relay like this can guarantee device safety again.
Also just like not to intelligent solid-state relay overvoltage phenomenon in addition available protecting, be exactly most possibly produce partial breakdown, this puncturing can make intelligent solid-state relay operationally extremely unstable, accelerates the damage of intelligent solid-state relay.In order to this special requirement of intelligent solid-state relay will be reached, work highly reliable, steady in a long-term.Above three comprehensively precisely defencive function must chip-scale must with reliably protecting in intelligent solid-state relay device.Reach intellectualized module (IPM) to control.
The power semiconductor devices such as enhancement mode controllable silicon, bidirectional triode thyristor or High Performance Insulation transistor npn npn (IGBT) chip are welded on the installation base plate DBC (ceramic copper-clad plate) of power semiconductor device.A suitable inductive spacing is reserved between two or multiple chip.On the top of enhancement mode controllable silicon (GTO) or High Performance Insulation transistor npn npn (IGBT) chip, a thermally conductive insulating layer is set, with 3D form three-dimensional single or multiple lift superposition installation, there is the function induction pcb boards such as temperature, overcurrent, overvoltage induction again, like this can with do not increase on former chip package area basis with nearest location sensitive to electric semiconductor power chip temperature, electric current, change in voltage.
Above-mentioned functions induction pcb board, be a kind of function induction pcb board that can arrange arbitrarily function, can be the function induction pcb board of one piece of simple function, as having measuring ability to temperature, that just uses temperature sensor.Need there is requirement to temperature, electric current in this way, just can power up influenza induction sensor with temperature sensor.Can certainly be Full Featured, that be with regard to set temperature transducer, electric current inductive pick-up, overvoltage protection transducer, also can be included the Special display absorbing circuit device of inductive load protection even.This decides with the purposes of intelligent solid-state relay.At the device of some special purposes, use as capacitive load (reactive power compensator) is upper, just can set soft starting mode, extend start-up time and achieve the goal.This is a kind of according to purposes in a word, very flexile compound mode.
In intelligent solid-state relay, on power semiconductor device leading-out terminal line cover, small current induction coil completes and detects the curent change of overcurrent or short circuit, can arrange single or two electric current induction coils and mutually connect, to improve detection sensitivity.And the input of FEEDBACK CONTROL power semiconductor device, us order reaction second speed can be reached like this.Simultaneously at power semiconductor device output TVS (transient overvoltage protection) in parallel or piezo-resistance, Special display absorbing circuit.
Special display absorbing circuit of the present invention is made up of current-limiting resistance R4, bidirectional trigger diode D1, light-emitting diode D2.Be parallel to power semiconductor device output.When power semiconductor device place cut-off (not conducting) state, light-emitting diode obtains operating voltage by current-limiting resistance, bidirectional trigger diode, Quan Liang.When power semiconductor device is in conducting state, because the tube voltage drop of power semiconductor device is quite low, only have below 2V, be not enough to the operating voltage of supplying light-emitting diode, do not work.When power semiconductor device is in over-temperature condition, due to the effect of temperature sensor.Make the rising progressively of electric semiconductor tube voltage drop, also due to the effect of bidirectional trigger diode and current-limiting resistance.Not enough driving bidirectional trigger diode conducting at lower voltages.Light-emitting diode does not still work, and only has when power semiconductor device tube voltage drop exceedes more than certain value.This light-emitting diode just starts from faint until very bright.This is the effective ways that very intuitive judgment intelligent solid-state relay is overheated.This circuit also very effectively can absorb the various high-pressure sharp pulses that work main circuit may exist simultaneously, as the irregular burst of pulses of lightning induction etc.
The luminosity of light-emitting diode represents operating state.Can feed back and output to control centre, complete the collection of information.
After overall intelligence solid-state relay has been tested, installation base plate (DBC) directly welds on a heat sink.In order to reach best radiating effect, we devise integral Al-alloy heat-dissipating casing, electronic semiconductor components is directly welded on the bottom surface of integral Al-alloy heat-dissipating casing, such radiator has multiple side externally to dispel the heat simultaneously, and finally filling employing silica dioxide granule mixes highly heat-conductive material with IC special glue and encapsulates again.Ensure the heat conductivity of power semiconductor device and be not subject to environment on the impact of device.Can improve the power density of 30 ~ 40%, under Same Efficieney condition of work, volume can reduce 50%.
The intelligent solid-state relay integrated level of this patent is high, can be applicable to operating current from a few peace to a few kilo-ampere, operating voltage from a few hectovolt to the device of several kilovolts on a large scale in application.Can be widely used at three-phase circuit (technical grade), the more real protection from chip-scale.Guarantee the safe and reliable of load and device.
The intelligent solid-state relay of this patent and the maximum difference of normal conventional solid-state relay are that normal conventional solid-state relay is only opened (conducting) or closed (cut-off) two states, and intelligent solid-state relay is except having out (conducting) or (cut-off) two states of closing, also have one to open, intermediateness between pass, namely intelligence electric current is carried out to worked objective condition, voltage, temperature rationally responds to analysis, judge and effectively fast react and effectively process, and possess and fill part protection intelligent solid-state relay device and payload security itself, the integration capability of highly reliable operation.And have one group of signal of load operating condition exporting intelligent solid-state relay to control centre and drive, to meet the needs that industrial automation is produced.
Method and apparatus of the present invention can be applied on many dissimilar intelligent solid-state relays and improve and change, and all improvement are all considered within the spirit and scope of the present invention with change.As defined in the claim of patent of the present invention.
Claims (10)
1. an intelligent solid-state relay, is characterized in that: comprise, the induction of integral Al-alloy heat-dissipating casing, installation base plate, metal guide hot plate, function pcb board, control board, electric current inductive pick-up, power semiconductor device;
Wherein power semiconductor device has leading-out terminal;
Described power semiconductor device is fixed on installation base plate;
Described installation base plate is directly welded on described integral Al-alloy heat-dissipating casing;
Described electric current inductive pick-up is sleeved on described leading-out terminal;
Described function induction pcb board is fixed on described leading-out terminal;
Described leading-out terminal is all connected with described control board with induction pcb board lead-out wire.
2. intelligent solid-state relay according to claim 1, is characterized in that:
Wherein, described integral Al-alloy heat-dissipating casing is connected with metal guide hot plate described above described power semiconductor device, forms a heat transfer closed-loop path, and has good electromagnetic compatibility (EMC) antijamming capability.
3. intelligent solid-state relay according to claim 1, is characterized in that:
Wherein, described installation base plate is ceramic copper-clad plate, and installation base plate is directly welded on integral Al-alloy heat-dissipating casing.
4. intelligent solid-state relay according to claim 1, is characterized in that:
Wherein, described power semiconductor device is enhancement mode controlled silicon chip group or High Performance Insulation transistor npn npn chipset.
5. intelligent solid-state relay according to claim 1, is characterized in that:
Wherein, described function induction pcb board is provided with excess voltage protection, thermal-shutdown circuit and working state signal output circuit.
6. intelligent solid-state relay according to claim 1, is characterized in that:
Wherein, silica dioxide granule is adopted to mix High-heat-conductiviinsulation insulation material by device package with IC special glue.
7. intelligent solid-state relay according to claim 1, is characterized in that:
Wherein, electric current induction sensing circuit comprises: regulating resistance, output resistance, small-sized rectifier bridge stack, unidirectional triggering controllable silicon, electric current inductive pick-up and optocoupler;
Described regulating resistance is connected in parallel on the two ends of the coil of electric current inductive pick-up; The described input of small-sized rectifier bridge stack is connected with the two ends of coil, and output is connected with the input of optocoupler; Described unidirectional triggering silicon controlled positive pole is connected with an output of the first output, optocoupler; Negative pole is connected with the second output, trigger electrode is connected with another output of optocoupler through output resistance.
8. intelligent solid-state relay according to claim 5, is characterized in that:
Wherein, described excess voltage protection comprises piezo-resistance, current-limiting resistance, bidirectional trigger diode and light-emitting diode;
Described piezo-resistance is connected in parallel on described power semiconductor device; After the positive pole series connection of described current-limiting resistance, described bidirectional trigger diode, described light-emitting diode, in parallel with described piezo-resistance.
9. intelligent solid-state relay according to claim 5, is characterized in that:
Wherein, thermal-shutdown circuit comprises two temperature sensors, and next-door neighbour's power semiconductor device is arranged.
10. intelligent solid-state relay according to claim 5, is characterized in that:
Wherein, described light-emitting diode is in parallel with a described small-sized rectifier bridge stack, by exporting a DC operation status signal after rectification, feeds back to control centre.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610017729.9A CN105471415A (en) | 2016-01-12 | 2016-01-12 | Intelligent solid state relay |
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| CN201610017729.9A CN105471415A (en) | 2016-01-12 | 2016-01-12 | Intelligent solid state relay |
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| CN105471415A true CN105471415A (en) | 2016-04-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105807652A (en) * | 2016-03-07 | 2016-07-27 | 上海旻成峰电子科技有限公司 | Smart control system and control method for smart solid-state relay |
| CN106027004A (en) * | 2016-05-31 | 2016-10-12 | 成都德善能科技有限公司 | Intelligent solid state relay with efficient protection function |
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| CN201518468U (en) * | 2009-09-17 | 2010-06-30 | 陕西群力电工有限责任公司 | Novel three-phase large-power alternating current solid relay |
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| WO2014196309A1 (en) * | 2013-06-05 | 2014-12-11 | 富士電機株式会社 | Semiconductor device |
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| CN2529450Y (en) * | 2002-01-07 | 2003-01-01 | 登明科技有限公司 | Solid-state relay |
| CN2598251Y (en) * | 2003-01-08 | 2004-01-07 | 珠海康威特通用电源有限公司 | Active power factor correcting module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105807652A (en) * | 2016-03-07 | 2016-07-27 | 上海旻成峰电子科技有限公司 | Smart control system and control method for smart solid-state relay |
| CN106027004A (en) * | 2016-05-31 | 2016-10-12 | 成都德善能科技有限公司 | Intelligent solid state relay with efficient protection function |
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