CN102780203A - Overvoltage and under-voltage protection circuit - Google Patents
Overvoltage and under-voltage protection circuit Download PDFInfo
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- CN102780203A CN102780203A CN2012102703290A CN201210270329A CN102780203A CN 102780203 A CN102780203 A CN 102780203A CN 2012102703290 A CN2012102703290 A CN 2012102703290A CN 201210270329 A CN201210270329 A CN 201210270329A CN 102780203 A CN102780203 A CN 102780203A
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Abstract
The invention relates to an electronic circuit, in particular to a circuit for detecting the voltage and protecting the overvoltage and under-voltage. The invention adopts the following technical scheme that an overvoltage and under-voltage protection circuit is characterized by comprising a full wave rectifying circuit unit, a trip circuit unit and a driving circuit unit, wherein the trip circuit unit is formed by connecting a trip coil L1, a controlled silicon Q1 and a diode D2 in series; and the driving circuit unit comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a voltage stabilizing tube ZD1, a triode Q2 and a diode D7. By adopting the scheme, the shortcomings in the prior art are overcome; and a novel overvoltage and under-voltage protection circuit which can rapidly improve an electrical fast transient pulse group test to more than 4Kv, and improve a surge test to more than differential mode 4kV and common mode 5kV is provided.
Description
Technical field
The present invention relates to a kind of electronic circuit, be meant especially, the circuit that overvoltage and under voltage are protected voltage detecting.
Background technology
At present; Voltage usually can exist because of wiring error with 380V voltage is applied on the 220V circuit or the electrical network instability causes overvoltage of power supply or under voltage; Burn the situation of circuit breaker lower end load equipment; For solving because of power supply overvoltage or the under-voltage problem that causes, the employing electronic detection circuit detects voltage or under-voltage rear drive circuit breaker carries out disjunction, and purpose is a protective circuit breaker below load equipment; Existing over under-voltage protection circuit is with of the present invention different fully, and it exists the electrical fast transient (eft) performance all not to be higher than 2kV, and surge capability is not higher than the defective of 4kV.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, providing a kind of can bring up to the electrical fast transient (eft) test more than the 4kV, and surge test is brought up to differential mode 4kV, the novel over under-voltage protection circuit that common mode 5KV is above.
In order to realize above purpose, the present invention adopts following technical scheme: a kind of over under-voltage protection circuit is characterized in that: include full-wave rectifying circuit unit, trip circuit unit and drive circuit unit; The trip circuit unit is made up of tripping coil L1, controllable silicon Q1 and diode D2 series connection, and drive circuit unit includes resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, voltage-stabiliser tube ZD1, triode Q2 and diode D7, wherein the negative electrode of resistance R 1 one termination full-wave rectifying circuit unit; Resistance R 1 other end is connected with resistance R 3; Resistance R 3 another termination GND, voltage-stabiliser tube ZD1 negative electrode are connected to the node of resistance R 1 and resistance R 3, and anode is connected to controllable silicon Q1 gate pole; Resistance R 2 one is terminated at the negative electrode of full-wave rectifying circuit unit; The other end is connected to triode Q2 emitter, and triode Q2 base stage is connected to the node of resistor R 1 and resistor R 3 through resistance R 4, and collector electrode is connected to GND through resistance R 5; Diode D7 anode is connected to transistor Q2 collector electrode, and negative electrode is connected to controllable silicon Q1 gate pole.
Adopt such scheme, after tripping coil L1 and the controllable silicon Q1 series connection, the formation of connecting with diode D2 trip circuit.Diode D2 has improved the trigger voltage of controllable silicon Q1, and the PN junction structure of diode D2 has improved the required energy of triggering trip circuit simultaneously, has so just improved electromagnetic immunity degree performance.This circuit is selected through appropriate design and suitable component parameter, can the electrical fast transient (eft) performance be brought up to more than the 4kV, and surge capability is also brought up to more than the 4kV.
Further setting of the present invention is: be connected with polar capacitor C1 on the node of said resistance R 1 and resistance R 3; This polar capacitor C1 anode is connected to the node of resistor R 1 and resistor R 3; Negative electrode is connected to GND, is connected with voltage-stabiliser tube ZD2 and capacitor C 3 on the emitter of said triode Q2, and the other end of the anode of voltage-stabiliser tube ZD2 and capacitor C 3 is connected to GND; Be connected with capacitor C 2 on the gate pole of said controllable silicon Q1, the other end of capacitor C 2 is connected in GND; Said full-wave rectifying circuit unit includes piezo-resistance RV1, diode D3, diode D4, diode D5 and diode D6; L mutually with after N is connected to piezo-resistance RV1 two ends mutually, is connected to diode D3, diode D4, diode D5 and the rectification of diode D6 formation rectification circuit.
Through above-mentioned further scheme, make this circuit function more reasonable, wherein voltage-stabiliser tube DZ2 provides the reference voltage of under-voltage protection; Protect triode Q2 simultaneously, prevent triode Q2 over-voltage breakdown, capacitor C 1 is carried out smoothing effect with 3 pairs of voltages of capacitor C; Through the selection of different parameters, realize control, the false triggering that capacitor C 2 filtering small-signal noises cause controllable silicon Q1 simultaneously to electrifying timing sequence; Improve the dV/dt of controllable silicon Q1 anode and negative electrode simultaneously, reduce by the possibility of false triggering.
Below in conjunction with accompanying drawing the present invention is done further explain.
Description of drawings
Fig. 1 is an embodiment of the invention circuit structure diagram.
Embodiment
As shown in Figure 1, L is connected to the rectification circuit rectification of diode D3, diode D4, diode D5 and diode D6 formation mutually with after N is connected to piezo-resistance RV1 two ends mutually.After tripping coil L1 and the diode D1 parallel connection, an end is connected in diode D4, and the other end is connected in controllable silicon Q1 anode; Diode D2 anode is connected to controllable silicon Q1 negative electrode, and negative electrode is connected to GND, and capacitor C 2 one is terminated at controllable silicon Q1 gate pole; The other end is connected to GND, and resistance R 1 one is terminated at diode D4 negative electrode, and the other end is connected to resistance R 3 one ends; And resistance R 3 other ends are connected to GND, and polar capacitor C1 anode is connected to the node of resistance R 1 and resistance R 3, and negative electrode is connected to GND; Resistance R 2 one is terminated at diode D4 negative electrode, and the other end is connected to triode Q2 emitter.Triode Q2 base stage is connected to the node of resistance R 1 and resistance R 3 through resistance R 4, and collector electrode is connected to GND through resistance R 5, and diode D7 anode is connected to triode Q2 collector electrode, and negative electrode is connected to controllable silicon Q1 gate pole.Voltage-stabiliser tube ZD2 negative electrode is connected to triode Q2 emitter, and anode is connected to GND, and voltage-stabiliser tube ZD1 negative electrode is connected to the node of resistor R 1 and resistor R 3, and anode is connected to controllable silicon Q1 gate pole, and capacitor C 3 one is terminated at voltage-stabiliser tube ZD2 negative electrode, and the other end is connected to GND.
Concrete operation principle: resistance R 1 is passed through voltage dividing potential drop after the rectification with resistance R 3, when overtension, drives controllable silicon Q1 through the ZD1 voltage-stabiliser tube and realizes the protection of threading off; Resistance R 1 is passed through voltage dividing potential drop after the rectification with resistance R 3, and when brownout, triode Q2 conducting drives Q1 through D7 and realizes the protection of threading off.
Claims (3)
1. over under-voltage protection circuit is characterized in that: include full-wave rectifying circuit unit, trip circuit unit and drive circuit unit, the trip circuit unit is made up of tripping coil L1, controllable silicon Q1 and diode D2 series connection; Drive circuit unit includes resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, voltage-stabiliser tube ZD1, triode Q2 and diode D7; The negative electrode of resistance R 1 one termination full-wave rectifying circuit unit wherein, resistance R 1 other end is connected with resistance R 3, resistance R 3 another termination GND; Voltage-stabiliser tube ZD1 negative electrode is connected to the node of resistance R 1 and resistance R 3; Anode is connected to controllable silicon Q1 gate pole, and resistance R 2 one is terminated at the negative electrode of full-wave rectifying circuit unit, and the other end is connected to triode Q2 emitter; Triode Q2 base stage is connected to the node of resistor R 1 and resistor R 3 through resistance R 4; Collector electrode is connected to GND through resistance R 5, and diode D7 anode is connected to transistor Q2 collector electrode, and negative electrode is connected to controllable silicon Q1 gate pole.
2. over under-voltage protection circuit according to claim 1; It is characterized in that: be connected with polar capacitor C1 on the node of said resistance R 1 and resistance R 3, this polar capacitor C1 anode is connected to the node of resistor R 1 and resistor R 3, and negative electrode is connected to GND; Be connected with voltage-stabiliser tube ZD2 and capacitor C 3 on the emitter of said triode Q2; The other end of the anode of voltage-stabiliser tube ZD2 and capacitor C 3 is connected to GND, is connected with capacitor C 2 on the gate pole of said controllable silicon Q1, and the other end of capacitor C 2 is connected in GND.
3. over under-voltage protection circuit according to claim 1 and 2; It is characterized in that: said full-wave rectifying circuit unit includes piezo-resistance RV1, diode D3, diode D4, diode D5 and diode D6; L mutually with after N is connected to piezo-resistance RV1 two ends mutually, is connected to diode D3, diode D4, diode D5 and the rectification of diode D6 formation rectification circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102703290A CN102780203A (en) | 2012-07-31 | 2012-07-31 | Overvoltage and under-voltage protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102703290A CN102780203A (en) | 2012-07-31 | 2012-07-31 | Overvoltage and under-voltage protection circuit |
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| CN102780203A true CN102780203A (en) | 2012-11-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102703290A Pending CN102780203A (en) | 2012-07-31 | 2012-07-31 | Overvoltage and under-voltage protection circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104348351A (en) * | 2014-07-11 | 2015-02-11 | 广州金升阳科技有限公司 | Synchronous switch circuit for PFC (power factor correction) |
| CN107210161A (en) * | 2015-01-30 | 2017-09-26 | 通用电器技术有限公司 | For the under-voltage release circuit for the operating mechanism for making voltage circuit breakers tripping operation |
| CN107449959A (en) * | 2017-07-25 | 2017-12-08 | 郑州瑞能电源技术有限公司 | Input over under-voltage protection circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2057787U (en) * | 1989-10-23 | 1990-05-30 | 夏天伟 | Multi-functional protective device |
| JPH10201078A (en) * | 1997-01-17 | 1998-07-31 | Sumitomo Metal Ind Ltd | Protective circuit |
| CN201904601U (en) * | 2010-12-23 | 2011-07-20 | 河北宝凯电器有限公司 | Multifunctional three-phase circuit breaker |
| CN202696110U (en) * | 2012-07-31 | 2013-01-23 | 德力西电气有限公司 | Overvoltage and under-voltage protection circuit |
-
2012
- 2012-07-31 CN CN2012102703290A patent/CN102780203A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2057787U (en) * | 1989-10-23 | 1990-05-30 | 夏天伟 | Multi-functional protective device |
| JPH10201078A (en) * | 1997-01-17 | 1998-07-31 | Sumitomo Metal Ind Ltd | Protective circuit |
| CN201904601U (en) * | 2010-12-23 | 2011-07-20 | 河北宝凯电器有限公司 | Multifunctional three-phase circuit breaker |
| CN202696110U (en) * | 2012-07-31 | 2013-01-23 | 德力西电气有限公司 | Overvoltage and under-voltage protection circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104348351A (en) * | 2014-07-11 | 2015-02-11 | 广州金升阳科技有限公司 | Synchronous switch circuit for PFC (power factor correction) |
| CN104348351B (en) * | 2014-07-11 | 2017-03-22 | 广州金升阳科技有限公司 | Synchronous switch circuit for PFC (power factor correction) |
| CN107210161A (en) * | 2015-01-30 | 2017-09-26 | 通用电器技术有限公司 | For the under-voltage release circuit for the operating mechanism for making voltage circuit breakers tripping operation |
| CN107449959A (en) * | 2017-07-25 | 2017-12-08 | 郑州瑞能电源技术有限公司 | Input over under-voltage protection circuit |
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Application publication date: 20121114 |