CN202696110U - Overvoltage and under-voltage protection circuit - Google Patents
Overvoltage and under-voltage protection circuit Download PDFInfo
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- CN202696110U CN202696110U CN 201220376267 CN201220376267U CN202696110U CN 202696110 U CN202696110 U CN 202696110U CN 201220376267 CN201220376267 CN 201220376267 CN 201220376267 U CN201220376267 U CN 201220376267U CN 202696110 U CN202696110 U CN 202696110U
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Abstract
The utility model relates to an electronic circuit, in particular to an overvoltage and under-voltage protection circuit in allusion to voltage detection. The technical scheme of the utility model is as follow: the overvoltage and under-voltage protection circuit is characterized by comprising a full-wave rectifying circuit unit, a trip circuit unit and a driving circuit unit, wherein the trip circuit unit is formed by connecting a trip coil L1, a silicon-controlled rectifier Q1 and a diode D2 in series; and the driving circuit unit comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a voltage-stabilizing tube ZD1, a triode Q2 and a diode D7. Due to adoption of the scheme, the utility model aims at overcoming the defects of the prior art and providing the novel overvoltage and under-voltage protection circuit which can improve an electrical fast transient pulse train test to be above 4kV and improve a surge test to a difference mode of 4kV and common mode of 5kV.
Description
Technical field
The utility model relates to a kind of electronic circuit, refers to especially to voltage detecting the circuit that overvoltage and under voltage are protected.
Background technology
At present, voltage usually can exist and is applied to 380V voltage on the 220V circuit or the unstable overvoltage of power supply that causes of electrical network or under voltage because of wiring error, burn the situation of circuit breaker lower end load equipment, for solving because of power supply overvoltage or the under-voltage problem that causes, the employing electronic detection circuit detects voltage or under-voltage rear drive circuit breaker carries out disjunction, and purpose is protective circuit breaker below load equipment; Existing over under-voltage protection circuit is from of the present invention fully different, and it exists the electrical fast transient (eft) performance all not to be higher than 2kV, and surge capability is not higher than the defective of 4kV.
Summary of the invention
The purpose of this utility model is to overcome the deficiency that prior art exists, and providing a kind of can bring up to the electrical fast transient (eft) test more than the 4kV, and surge test is brought up to differential mode 4kV, the novel over under-voltage protection circuit that common mode 5KV is above.
In order to realize above purpose; the utility model is by the following technical solutions: a kind of over under-voltage protection circuit; it is characterized in that: include the full-wave rectifying circuit unit; trip circuit unit and drive circuit unit; the trip circuit unit is by tripping coil L1; controllable silicon Q1 and diode D2 series connection consist of; drive circuit unit includes resistance R 1; resistance R 2; resistance R 3; resistance R 4; resistance R 5; voltage-stabiliser tube ZD1; triode Q2 and diode D7; the negative electrode of resistance R 1 one termination full-wave rectifying circuit unit wherein; resistance R 1 other end is connected with resistance R 3; resistance R 3 another termination GND; voltage-stabiliser tube ZD1 negative electrode is connected to the node of resistance R 1 and resistance R 3; anode is connected to controllable silicon Q1 gate pole; resistance R 2 one is terminated at the negative electrode of full-wave rectifying circuit unit; the other end is connected to triode Q2 emitter; triode Q2 base stage is connected to the node of resistor R1 and resistor R3 through resistance R 4; collector electrode is connected to GND through resistance R 5, and diode D7 anode is connected to transistor Q2 collector electrode, and negative electrode is connected to controllable silicon Q1 gate pole.
Adopt such scheme, after tripping coil L1 and the controllable silicon Q1 series connection, the formation of connecting with diode D2 trip circuit.Diode D2 has improved the trigger voltage of controllable silicon Q1, and the PN junction structure of diode D2 has improved the required energy of triggering trip circuit simultaneously, has so just improved the electromagnetic immunity performance.This circuit is selected by appropriate design and suitable component parameter, the electrical fast transient (eft) performance can be brought up to more than the 4kV, and surge capability is also brought up to more than the 4kV.
Further setting of the present utility model is: be connected with polar capacitor C1 on the node of described resistance R 1 and resistance R 3, this polar capacitor C1 anode is connected to the node of resistor R1 and resistor R3, negative electrode is connected to GND, be connected with voltage-stabiliser tube ZD2 and capacitor C 3 on the emitter of described triode Q2, the other end of the anode of voltage-stabiliser tube ZD2 and capacitor C 3 is connected to GND, be connected with capacitor C 2 on the gate pole of described controllable silicon Q1, the other end of capacitor C 2 is connected in GND; Described full-wave rectifying circuit unit includes piezo-resistance RV1, diode D3, diode D4, diode D5 and diode D6, the L phase is connected to diode D3, diode D4, diode D5 and diode D6 and consists of the rectification circuit rectification with after N is connected to piezo-resistance RV1 two ends mutually.
By above-mentioned further scheme; make this circuit function more reasonable; wherein voltage-stabiliser tube DZ2 provides the reference voltage of under-voltage protection, protects simultaneously triode Q2, prevents triode Q2 over-voltage breakdown; 3 pairs of voltages of capacitor C 1 and capacitor C carry out smoothing effect; by the selection of different parameters, realize the control to electrifying timing sequence, the false triggering that capacitor C 2 filtering small scale ripples cause controllable silicon Q1 simultaneously; improve simultaneously the dV/dt of controllable silicon Q1 anode and negative electrode, reduce by the possibility of false triggering.
Below in conjunction with accompanying drawing the utility model is described in further detail.
Description of drawings
Fig. 1 is the utility model embodiment circuit structure diagram.
Embodiment
As shown in Figure 1, the L phase is connected to the rectification circuit rectification that diode D3, diode D4, diode D5 and diode D6 consist of with after N is connected to piezo-resistance RV1 two ends mutually.After tripping coil L1 and the diode D1 parallel connection, one end is connected in diode D4, the other end is connected in controllable silicon Q1 anode, diode D2 anode is connected to controllable silicon Q1 negative electrode, negative electrode is connected to GND, capacitor C 2 one is terminated at controllable silicon Q1 gate pole, the other end is connected to GND, resistance R 1 one is terminated at diode D4 negative electrode, and the other end is connected to resistance R 3 one ends, and resistance R 3 other ends are connected to GND, polar capacitor C1 anode is connected to the node of resistance R 1 and resistance R 3, negative electrode is connected to GND, and resistance R 2 one is terminated at diode D4 negative electrode, and the other end is connected to triode Q2 emitter.Triode Q2 base stage is connected to the node of resistance R 1 and resistance R 3 through resistance R 4, collector electrode is connected to GND through resistance R 5, and diode D7 anode is connected to triode Q2 collector electrode, and negative electrode is connected to controllable silicon Q1 gate pole.Voltage-stabiliser tube ZD2 negative electrode is connected to triode Q2 emitter, and anode is connected to GND, and voltage-stabiliser tube ZD1 negative electrode is connected to the node of resistor R1 and resistor R3, and anode is connected to controllable silicon Q1 gate pole, and capacitor C 3 one is terminated at voltage-stabiliser tube ZD2 negative electrode, and the other end is connected to GND.
The specific works principle: resistance R 1 and resistance R 3, drive controllable silicon Q1 by the ZD1 voltage-stabiliser tube and realize the protection of threading off when overtension by to voltage dividing potential drop after the rectification; Resistance R 1 and resistance R 3 are by to voltage dividing potential drop after the rectification, and when brownout, triode Q2 conducting drives Q1 by D7 and realizes the protection of threading off.
Claims (3)
1. over under-voltage protection circuit; it is characterized in that: include the full-wave rectifying circuit unit; trip circuit unit and drive circuit unit; the trip circuit unit is by tripping coil L1; controllable silicon Q1 and diode D2 series connection consist of; drive circuit unit includes resistance R 1; resistance R 2; resistance R 3; resistance R 4; resistance R 5; voltage-stabiliser tube ZD1; triode Q2 and diode D7; the negative electrode of resistance R 1 one termination full-wave rectifying circuit unit wherein; resistance R 1 other end is connected with resistance R 3; resistance R 3 another termination GND; voltage-stabiliser tube ZD1 negative electrode is connected to the node of resistance R 1 and resistance R 3; anode is connected to controllable silicon Q1 gate pole; resistance R 2 one is terminated at the negative electrode of full-wave rectifying circuit unit; the other end is connected to triode Q2 emitter; triode Q2 base stage is connected to the node of resistor R1 and resistor R3 through resistance R 4; collector electrode is connected to GND through resistance R 5; diode D7 anode is connected to transistor Q2 collector electrode, and negative electrode is connected to controllable silicon Q1 gate pole.
2. over under-voltage protection circuit according to claim 1; it is characterized in that: be connected with polar capacitor C1 on the node of described resistance R 1 and resistance R 3; this polar capacitor C1 anode is connected to the node of resistor R1 and resistor R3; negative electrode is connected to GND; be connected with voltage-stabiliser tube ZD2 and capacitor C 3 on the emitter of described triode Q2; the other end of the anode of voltage-stabiliser tube ZD2 and capacitor C 3 is connected to GND, is connected with capacitor C 2 on the gate pole of described controllable silicon Q1, and the other end of capacitor C 2 is connected in GND.
3. over under-voltage protection circuit according to claim 1 and 2; it is characterized in that: described full-wave rectifying circuit unit includes piezo-resistance RV1, diode D3, diode D4, diode D5 and diode D6; the L phase is connected to diode D3, diode D4, diode D5 and diode D6 and consists of the rectification circuit rectification with after N is connected to piezo-resistance RV1 two ends mutually.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220376267 CN202696110U (en) | 2012-07-31 | 2012-07-31 | Overvoltage and under-voltage protection circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220376267 CN202696110U (en) | 2012-07-31 | 2012-07-31 | Overvoltage and under-voltage protection circuit |
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CN202696110U true CN202696110U (en) | 2013-01-23 |
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CN 201220376267 Expired - Lifetime CN202696110U (en) | 2012-07-31 | 2012-07-31 | Overvoltage and under-voltage protection circuit |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102780203A (en) * | 2012-07-31 | 2012-11-14 | 德力西电气有限公司 | Overvoltage and under-voltage protection circuit |
CN105098721A (en) * | 2014-04-16 | 2015-11-25 | 南京南瑞继保电气有限公司 | Overvoltage protection circuit and overvoltage protection method for converter sub-module |
-
2012
- 2012-07-31 CN CN 201220376267 patent/CN202696110U/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102780203A (en) * | 2012-07-31 | 2012-11-14 | 德力西电气有限公司 | Overvoltage and under-voltage protection circuit |
CN105098721A (en) * | 2014-04-16 | 2015-11-25 | 南京南瑞继保电气有限公司 | Overvoltage protection circuit and overvoltage protection method for converter sub-module |
CN105098721B (en) * | 2014-04-16 | 2018-08-17 | 南京南瑞继保电气有限公司 | A kind of overvoltage crowbar and method of transverter submodule |
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Granted publication date: 20130123 |
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CX01 | Expiry of patent term |