CN105490511A - T-type three-level IGBT drive circuit - Google Patents
T-type three-level IGBT drive circuit Download PDFInfo
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- CN105490511A CN105490511A CN201511028961.4A CN201511028961A CN105490511A CN 105490511 A CN105490511 A CN 105490511A CN 201511028961 A CN201511028961 A CN 201511028961A CN 105490511 A CN105490511 A CN 105490511A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/081—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters wherein the phase of the control voltage is adjustable with reference to the AC source
- H02M1/082—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters wherein the phase of the control voltage is adjustable with reference to the AC source with digital control
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention relates to a T-type three-level IGBT drive circuit, which is used for driving a three-level topology module. The T-type three-level IGBT drive circuit comprises a gate circuit, an over-voltage protection circuit and a secondary side signal processing module, wherein the gate circuit is connected with the three-level topology module and comprises an IGBT gate drive circuit which is used for converting a low-voltage IGBT switch control signal into a voltage signal capable of driving an IGBT switch; the over-voltage protection circuit is connected with the three-level topology module and the secondary side signal processing module respectively; the over-voltage protection circuit comprises an active clamp circuit; the active clamp circuit effectively suppresses a voltage spike when the IGBT is shut down through a transient suppression device with fast response characteristics; and the secondary side signal processing module at least has the function of monitoring a collector voltage. The T-type three-level IGBT drive circuit can suppress a shut-down voltage, and is high in control accuracy and small in system loss.
Description
Technical field
The present invention relates to a kind of T-shaped three level IGBT drive circuit, be specifically related to a kind of T-shaped three level IGBT drive circuit being applied to photovoltaic combining inverter.
Background technology
Grid-connected photovoltaic system forms primarily of photovoltaic array module, inverter, alternating current filter and electrical network.Inverter is the key equipment connecting photovoltaic array module and electrical network, runs on maximum power point in order to realize controlling photovoltaic array module and injects sinusoidal current to electrical network.Photovoltaic combining inverter has high requirement to the aspect such as harmonic wave THD (TotalHarmonicDistortion, total harmonic distortion), transformation efficiency, security reliability.Traditional photovoltaic DC-to-AC converter adopts two level block, and IGBT drive circuit adopts the circuit mode that common optical coupler is isolated, and does not possess overcurrent monitoring and IGBT over-voltage protecting function, there is certain defect.The power device loss of two level block is comparatively large, conversion efficiency is low, and inverter output harmonic wave THD is comparatively large, needs larger sized filter.The common-mode voltage variation rate of two level block is comparatively large, causes common mode current also comparatively large, needs more complicated EMI (ElectromagneticInterference, electromagnetic interference) design to meet safety requirements.
Three-level inverter has the following advantages compared with two-level inverter:
1., when using the IGBT of same voltage levvl, three-level inverter can make output voltage and power increasing be twice; 2., need not in high-tension application, three-level inverter allows to use the IGBT module compared with low pressure, can improve IGBT switching frequency; 3. the electric current in mains side current ratio two level of three-level inverter is closer to sine, and sine is better, and power factor is higher; 4. do not require that collector voltage reaches Static and dynamic symmetry, thus simplify the design of IGBT driving, and avoid using external buffer circuit; 5. when using identical switching frequency, final output frequency can double, and obviously contributes to the size and the reduction switching loss that reduce passive component.
Although three-level topology has more advantage compared to two level topologys, but common three-level topology drive circuit is perfect not, the due to voltage spikes such as produced when IGBT turns off, usually above two level converters, therefore turns off in overvoltage in suppression, needs more to consider.
Summary of the invention
The object of the present invention is to provide a kind of T-shaped three level IGBT drive circuit suppressing to turn off overvoltage.
For this reason, the T-shaped three level IGBT drive circuit of one that the present invention proposes, for driving three-level topology module, comprise the gate circuit be connected with three-level topology module, described gate circuit comprises IGBT gate drive circuit, for low-voltage IGBT switch controlling signal being converted into the voltage signal that can drive IGBT switch; Also comprise overvoltage crowbar, secondary limit signal processing module, described overvoltage crowbar is connected with time limit signal processing module with three-level topology module respectively, overvoltage crowbar comprises active clamping circuir, and due to voltage spikes when this active clamping circuir is turned off IGBT by the transient suppression device with fast response characteristic effectively suppresses; Described time limit signal processing module at least has collector voltage monitoring function.
The invention has the advantages that, due to voltage spikes when being turned off IGBT by the transient suppression device with fast response characteristic by active clamping circuir is effectively suppressed, and can suppress to turn off overvoltage.
In preferred version of the present invention, the present invention is easy to be made into plug and play type, and control accuracy is high, system loss is little.
Other advantages of the present invention, are further described by embodiment.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention circuit block diagram.
Fig. 2 is embodiment of the present invention circuit theory diagrams.
Fig. 3 is embodiment of the present invention plug and play principle schematic.
Fig. 4-1 is the application block diagram of embodiment of the present invention chips QD2011.
Fig. 4-2 is theory diagrams of embodiment of the present invention chips QD2011.
Fig. 4-3 is constrained input pin logic relation pictures of embodiment of the present invention chips QD2011.
Fig. 4-4 is short-circuit protection theory diagrams of embodiment of the present invention chips QD2011.
Fig. 4-5 is determination schematic diagrames of the IGBT emitting stage voltage of embodiment of the present invention chips QD2011.
Fig. 4-6 is Fault port oscillograms of embodiment of the present invention chips QD2011.
Fig. 4-7 is gate-drive theory diagrams of embodiment of the present invention chips QD2011.
Fig. 4-8 is active-clamp fundamental diagrams of embodiment of the present invention chips QD2011.
Embodiment
The main purpose of the following embodiment of the present invention is to provide that a kind of security reliability being applied to photovoltaic combining inverter is high, control accuracy is high, system loss is little, the T-shaped three level IGBT drive circuit of plug and play.
The technical problem solved has:
1., by active clamping circuir, effectively can suppress Vce (between collector electrode and the emitter voltage) due to voltage spikes produced in IGBT turn off process, avoid instantaneous voltage more than the withstand voltage of IGBT;
2. the short-circuit protection circuit be provided with has short-circuit protection function, and regulate the short-circuit protection response time by accessing charging capacitor between chipset electrode voltage monitoring port VCE and earth terminal GND, the charging interval of electric capacity is longer, and the corresponding short circuit response time also can increase;
3. the gate pole protective circuit be provided with has gate pole defencive function, makes IGBT gate voltage ensure within the scope of safety value;
4. the gate drive circuit be provided with has gate-drive function, and the low voltage signal that chip is exported is converted into the voltage signal that can be used for driving IGBT to open, turn off;
5. possess plug-and-play feature, according to IGBT module contour structures, the drive plate PCB of design directly can be welded on IGBT pin and use.
Specifically as shown in Figure 1, the T-shaped three level drive circuit of the plug and play of the embodiment of the present invention comprises successively as lower module:
-plug-and-play feature module (Fig. 3), be a kind of design perfect drive circuit and protective circuit after, according to corresponding IGBT module structure, its PCB design one-tenth directly can be welded on a kind of that IGBT pin uses and operate drive installation mode that is simple and easy, compact conformation;
-secondary limit signal processing chip, this chip forms time limit signal processing module in conjunction with peripheral circuit, can realize signal processing function, short-circuit protection function, collector voltage monitoring function, IGBT open shutoff voltage regulatory function, under-voltage protection function, fault management capability, IGBT gate electrode drive signals transformation function and active-clamp function etc.;
-gate circuit, opened by IGBT gate drive circuit, IGBT close resistance break split circuit, IGBT gate pole protective circuit jointly builds and forms;
-IGBT gate drive circuit, effect is by the low-voltage IGBT switch controlling signal of chip internal, by using external MOSFET to improve the mode driving peak current capability, is converted into the voltage signal that can drive IGBT switch;
-IGBT opens and closes resistance break split circuit, gate electrode resistance is separated into open resistance and closes resistance break, can adjust service time and the turn-off time of IGBT, and can play the effect of dispersion switching power loss respectively by open resistance and the resistance of closing resistance break;
-IGBT gate pole protective circuit, is connected gate pole with power supply potential by diode, makes gate voltage be clamped at below supply voltage; By bi-directional voltage stabilizing pipe, gate pole is connected with emitter, makes V
gEbe in a stationary value;
-overvoltage crowbar, includes active clamping circuir, short-circuit protection circuit and electric voltage observation circuit;
-active clamping circuir, being that transient suppression device by having fast response characteristic due to voltage spikes when turning off IGBT effectively suppresses, avoiding the too high IGBT that causes of instantaneous due to voltage spikes to damage;
By real-time detected set electrode voltage ,-short-circuit protection circuit, judges whether IGBT is short-circuited fault, once the situation that is short-circuited, short-circuit protection circuit coordinates chip to export fault-signal also to turn off IGBT;
-electric voltage observation circuit, includes VCE observation circuit and active-clamp observation circuit in short-circuit protection function, plays the effect of information feed back respectively in short-circuit protection function and active-clamp function.
As shown in Figure 2, be described for Q4 pipe at this, the drive circuit of its excess-three pipe (Q1, Q2, Q3) is identical with it.The T-shaped three level IGBT drive circuit of described plug and play comprises: the three-level topology module 1 of the IGBT pipe of 4 T-shaped connections composition, secondary limit signal processing chip 2, overvoltage crowbar 3, gate circuit 4, chip periphery circuit 5 and plug-and-play feature module.
Described three-level topology module 1 comprises four IGBT pipes of T-shaped connection and supporting diode thereof, and wherein Q1 pipe and Q4 pipe are supervisor, and Q2 pipe and Q3 pipe are looped pipeline, are responsible for the electric pressure will born compared with looped pipeline higher; Described T-shaped connection is, the emitter of Q1 pipe is connected with the collector electrode of Q4 pipe, and the emitter of Q2 pipe is connected with the emitter of Q3 pipe, and the collector electrode of Q3 pipe is managed with Q1 and is connected with the common port of Q4 pipe; All being connected with a diode between the emitter and collector of four described IGBT pipes, is D1, D2, D3, D4 respectively.
Described secondary limit signal processing chip 2; use the QD2011 of Shenzhen Bronze Swords Science and Technology Co., Ltd.; pinout (other detailed descriptions of chip see below) as shown in table 1 below; this chip can realize short-circuit protection function in conjunction with external circuit, collector voltage monitoring function, IGBT open shutoff voltage regulatory function, IGBT gate electrode drive signals transformation function, active-clamp function etc., and the concrete mode of functional realiey refers to structure and the operation principle explanation of each circuit of the present invention.
Table 1QD2011 pinout (note: it is inconsistent that the symbol that pinout adopts herein has on a few place and QD2011 chip specification, but function indifference, as: 1CCP, specification is 1VD2,3GH specification is 3GON, 4GL specification be GOFF, 5REF specification is V
rEF, 8F ?SET specification be Fault) described in overvoltage crowbar 3, include active clamping circuir and short-circuit protection circuit.
Described active clamping circuir; that transient suppression device by having fast response characteristic due to voltage spikes when turning off IGBT effectively suppresses; typical circuit can realize active-clamp function with multiple TVS pipe (a kind of high-effect protection device of diode form) series connection, and this active-clamp at least comprises an ambipolar transient suppressor (as shown in D11 in Fig. 2).Described active clamping circuir, comprise resistance R7, R8, R9, electric capacity C2, diode D12, D13, TVS pipe D11, wherein D11 by least one bipolarity TVS pipe and multiple unipolarity TVS pipe in series, R9 is the pull down resistor of chip port ACL, and R8 is the current-limiting resistance of chip port ACL, R7 and C2 acting in conjunction is got off and transmitted the change of IGBT collector voltage fast, D13 is clamping diode, and D12 is used for preventing reverse-conducting in the loop that collector electrode and gate pole are formed.Under normal on-state, when namely collector voltage does not exceed active-clamp desired level, there is not action in active-clamp; When collector voltage is too high, TVS pipe D11 is breakdown, and electric capacity C2 both end voltage changes formation AC signal, then is passed to chip active clamp monitoring port ACL through current-limiting resistance R8, now output short pulse IGBT is opened signal by chip, and IGBT conducting makes collector voltage decline.
Described short-circuit protection circuit, includes resistance R4, R6 and R10, electric capacity C3, C4, diode D10; Wherein R6 is made up of the resistor network of the indefinite high-tension resistive of quantity or series connection, in order to reduce the IGBT collector voltage being input to chip port, and power consumption dispersible can within tolerance range in single resistance; R10 is current-limiting resistance, can limit the size of current flowing into chip port; D10 is used for clamp, comes that protect IC port input voltage is the highest when IGBT fault can not exceed supply voltage.Short-circuit protection function implementation is that when being opened by monitoring IGBT, C, E voltage across poles judges whether IGBT has short circuit to occur, once the V detected
cEvoltage is higher than preset value, then chip internal comparator output level upset, makes drive singal output low level, turns off IGBT.Mainly by port REF, V in chip QD2011
cEcarry out the setting protected.REF port sets the threshold values of short-circuit protection by outer meeting resistance R4, V
cEport is used for monitoring voltage when actual IGBT opens, and by collector voltage monitoring port V
cEand access charging capacitor C3, C4 between earth terminal GND to regulate the short-circuit protection response time, the charging interval of electric capacity is longer, and the corresponding short circuit response time also can increase.
Described IGBT gate circuit 4; opened by IGBT gate drive circuit, IGBT close resistance break split circuit, IGBT gate pole protective circuit jointly builds and forms, and includes MOSFET pipe Q5 and internal body diodes D5 thereof, resistance R1, R2, R3, R5; electric capacity C1, diode D6, D8, D9.Wherein,
IGBT gate drive circuit, effect is by the low-voltage IGBT switch controlling signal of chip internal, is improved the mode driving peak current capability, be converted into the voltage signal that can drive IGBT switch by external MOSFET pipe Q5; Operation principle is that time limit signal processing chip 3 pin GH exports IGBT open signal while, the MOS that DH exports opens signal and makes Q5 conducting, GH output current superposes with Q5 output current and causes the electric current flowing into gate electrode resistance R3 to increase, thus improve driving peak current capability, current signal accesses IGBT gate pole after changing into voltage signal, carries out the control that IGBT opens shutoff; C1 is the electric capacity of voltage regulation opening MOSFET gate-drive power supply; By diode D8, the drain electrode of MOSFET pipe is clamped at ground, avoids this current potential to become negative pressure;
IGBT opens and closes resistance break split circuit, adjusts service time and the turn-off time of IGBT by external open resistance R3 and the resistance of closing resistance break R2 respectively, and is opening turn off process and play the effect of dispersion power consumption; Operation principle is that chip pin GH exports high level when IGBT opens, and inputs IGBT gate pole, make IGBT open-minded, chip pin GL output low level during shutoff through resistance R5 and open resistance R3, closes resistance break R2 and inputs gate pole, turn off IGBT through gate pole.The turning-on voltage signal that chip exports by resistance R5 is converted into current signal input open resistance R3; Resistance R1 is that chip I GBT gate pole turns off the pull down resistor of output port, even if effect is when driver power down, this resistance is also for providing a low-impedance path between the gate pole of IGBT and emitter.
IGBT gate pole protective circuit, is connected gate pole with power supply potential by diode D9, makes gate voltage be clamped at below supply voltage; By bi-directional voltage stabilizing pipe D6, gate pole is connected with emitter, makes gate potentials be in a stationary value;
Described chip periphery circuit, comprises diode D7, resistance R11, by diode D7, chip port GL is clamped at below power supply potential, prevents abnormal condition lower port overtension defective chip; The reference current of chip internal can be set by resistance R11.
Described plug and play construction module, is a kind of drive installation mode directly drive plate being welded on use on IGBT, is illustrated in fig. 3 shown below.
Attached: chip QD2011 describes in detail:
QD2011 is that Shenzhen Bronze Technologies Ltd. drives market for current IGBT, the application-specific integrated circuit (ASIC) for processing for secondary limit in IGBT driving core of special research and development.Can be used for alternative CONCEPT based on the IGBT driver of scale-2 chip.Fig. 4-1 is its application block diagram, and Fig. 4-2 is its theory diagrams.
Pin sequence number and definition
| Sequence number | Definition | Explanation | Sequence number | Definition | Explanation |
| 1 | VD2 | Open MOS gate-drive power supply | 9 | ON_Pulse | Open short pulse signal |
| 2 | DH | Open MOS gate-drive | 10 | OFF_Pulse | Turn off short pulse signal |
| 3 | GON | IGBT gate pole opens output | 11 | DL | Turn off MOS gate-drive |
| 4 | GOFF | IGBT gate pole turns off and exports | 12 | ACL | Active-clamp is monitored |
| 5 | V REF | Short-circuit protection threshold value sets | 13 | GND | Ground |
| 6 | VCE | IGBTCE voltage monitoring | 14 | VISO | Input power |
| 7 | BIAS | Reference current is arranged | 15 | ST1 | State monitoring signal |
| 8 | Fault | Malfunction exports | 16 | VE | IGBTE electrode potential sets |
Table 1QD2011 pinout
System performance parameter
Following parameter is if no special instructions all at VISO=25V, and at ambient temperature T=25 DEG C, test obtains.
Table 2QD2011 Specifeca tion speeification
Functional module is explained in detail
1. Signal transmissions
Chip QD2011 major function is the end pulse signal inputted by transformer, is converted to the normal signal turned on and off for IGBT by logical process.Figure 4 ?3 input pin ON_pulse, the relation of OFF_pulse and IGBTVGE voltage.
The input pin ON_pulse of QD2011, OFF_pulse is short pulse signal, chip internal has common mode inhibition function simultaneously, if namely two pins are input as height simultaneously, then IGBTVGE should be the level being in shutoff, and the pulse signal voltage amplitude of this two pins input is simultaneously more than or equal to 10V.
Not only OFF_pulse can turn off IGBT gate pole, and the module such as the under-voltage protection of chip internal and short-circuit protection can turn off IGBT, to protect IGBT.
2. short-circuit protection
Chip QD2011 has short-circuit protection function.The C when implementation of short-circuit protection is by detecting IGBT and opening, E voltage judges whether IGBT has the situation of short circuit to occur.
As figure 4 ?shown in 4, dash area is the circuit structure diagram of the short-circuit protection of chip QD2011 inside, mainly through port V
rEF, V
cEcarry out the setting protected.
1.V
rEFport inside has the constant-current source of individual 150uA to export, the resistance R connect by outside
rEFset the threshold value of short-circuit protection.
V
REF＝150×R
REF(KΩ)×10
‐3
2.V
cEport is used to detect voltage time actual IGBT opens.
3. when IGBT turns off time, VCE port can be pulled down to low level by chip internal logic, can ensure that chip can not carry out short-circuit protection when IGBT turns off like this.
4.R
cEconnect with the C pole of IGBT, be used for monitoring the voltage of IGBT collector electrode, R
cEnumerical value basis for selecting following methods, according to different busbar voltages, make to flow through R
cEelectric current be 0.6mA ?1mA, such as, V
dC ?Linkduring=1200V, R
cE=1.2M Ω ?1.8M Ω.R
cEcan select high-tension resistive, also can be multiple resistant series, and under any circumstance, creepage distance is all the factor that must consider.
5. when IGBT opens be, V
cEvoltage is greater than V
rEFvoltage then QD2011 chip internal comparator level can overturn, thus turns off the concurrent signal that is out of order of IGBT.
6.C
cEbe used to response time this parameter regulating short-circuit protection, and response time and R
cEand R
rEFall relevant, detail parameters is listed as follows:
| C CE[pF] | R REF[kΩ]/V REF[V] | Response time[μs] |
| 0 | 43/6.45 | 1.2 |
| 15 | 43/6.45 | 3.2 |
| 22 | 43/6.45 | 4.2 |
| 33 | 43/6.45 | 5.8 |
| 47 | 68/10.2 | 7.8 |
| 0 | 68/10.2 | 1.5 |
| 15 | 68/10.2 | 4.9 |
| 22 | 68/10.2 | 6.5 |
| 33 | 68/10.2 | 8.9 |
| 47 | 68/10.2 | 12.2 |
Table 3 response time (responsetime) and C
cEand R
rEFrelation
3.IGBT opens shutoff voltage and determines
The input power of chip QD2011 is about 25V, in order to make power supply normally the turning on and off of control IGBT, needs this power pin to distribute as with reference to current potential IGBT emitter.Suppose that the relative GND input power of VISO is 25V, then QD2011 can by relative for emitter voltage VE GND voltage control at 10V, when such IGBT opens VGE voltage be+15V, IGBT when turning off VGE voltage Wei ?10V.
Detailed operation principle please see Figure 4 ?5 theory diagram.
As figure 4 ?shown in 5, IGBT opens that the control of shutoff voltage mainly realized by the feedback of two amplifier AMP1, AMP2 of chip internal.
1. in the ordinary course of things, gate voltage VG=VISO time IGBT opens, gate voltage VG=0 when shutoff, i.e. GND current potential.
2., when VISO voltage enough (VISO>21V) time, mainly AMP2 works, as can be seen from Figure 4 the cathode voltage of AMP2: VGE=150uA × 100K=15V.
But during VISO<21V, VGE=15V when supposing that IGBT opens, then IGBT turn off time VGE> ?6V, if IGBT shutoff voltage is too high, IGBT can be caused to close continuous situation.In order to prevent the generation of this situation, chip internal by the voltage of AMP1 control AMP2 electrode input end, time to ensure that IGBT turns off VGE voltage little Yu ?6V.
4. under-voltage protection
Chip QD2011 can detect supply voltage, and in order to ensure that voltage that IGBT turns on and off is all in the scope that IGBT can be allowed normally to work, QD2011 monitors IGBT turning-on voltage VISO-VE and shutoff voltage VE.
1.VISO-VE voltage is the voltage of IGBT when opening.When voltage is lower than 12V, in order to ensure that IGBT can not cause device loss because of loss is too high after when opening, IGBT can be set low the concurrent signal that is out of order by QD2011.In this case, only have when voltage could recover from under-voltage condition higher than chip during 12.5V.
Voltage time 2.-VE is IGBT shutoff.When this VE voltage is less than 5V, IGBT gate pole can be set low the concurrent signal that is out of order by QD2011.Once enter under-voltage condition, only there is a VE voltage automatically could recover from under-voltage protection higher than 6V chip.
Under-voltage protection is to ensure that IGBT can reliably turn on and off.
5. fault management
Chip QD2011 is once fault (under-voltage or short circuit) detected, and chip can following action:
1. turn off IGBT.
2. sent the short pulse signal of an about 200ns by ON_Pulse pin, receive fault-signal for being transferred to former limit chip by transformer.
3, Fault port also can output low level signal; Fault pin should be the high level signal of about 5V under normal circumstances, has the low pulse spike of about 100ns with input pwm signal simultaneously.This pin can be used for Optical Fiber Transmission fault-signal.As Fig. 4-6.
4, ST1 port can be used for arranging fault time of delay.Being low level under normal circumstances, is chip internal 5V level during fault.
6.IGBT gate-drive
QD2011 gate-drive part is by the IGBT switch controlling signal of the low-voltage of chip internal, being converted into by various functional module can the gate electrode drive signals that turns on and off of control IGBT, and needs the power module providing power supply to corresponding functional module.
1. as shown in figs. 4-7, GONGOFF is the output of driver, can be used for control IGBT and open and the turn-off time by connecting resistance.Wherein service time is determined by GON pin institute connecting resistance RGON, and the resistance RGOFF that the turn-off time is connect by GOFF pin determines.The resistance of selected resistance and power need to decide according to the concrete model of IGBT.
The control port of the MOSFET of internal drive IGBT gate pole is also made pin (GH, GL) by 2.QD2011 simultaneously, can improve driving peak current capability by external MOSFET like this when QD2011 internal drive ability own is inadequate.
3. the Q1 of internal drive, Q2 are the NMOS of peak current 8A.The drive level of Q1, Q2 is 0-10V level, VGS=10V when namely opening, VGS=0 when shutoff.In order to reach this level, chip internal has independent driving power module, and simultaneously external capacitor C (1 ~ 10nF can) reaches the effect of stablizing this power supply.
4. level switch module, mainly converts the level that drive part needs to by the logic level signal of script chip internal 5V.
6. active-clamp
QD2011 chip, with active-clamp function, can protect IGBT when collector voltage is too high.
As Figure 4-8, peripheral circuit has TVS or high voltage stabilizing pipe to detect the voltage of IGBT collector electrode, and the voltage stabilizing value of this diode is exactly the critical value of active-clamp function action.
Normal work is that collector voltage is lower, and diode is in cut-off state, and ACL pin is in low level, and chip is in normally to be opened and off state.When (generally occurring in a short-circuit situation) after the voltage stabilizing value that collector voltage rises to higher than diode, diode reverse conducting, at this moment ACL end mouth can be set to high level, is turned off by Q2 by gate circuit; Diode current also can flow to IGBT gate pole simultaneously, once Q2 turns off, gate current flows through, and IGBT gate potentials is elevated; When gate potentials will be opened higher than IGBT during certain value, the collector voltage on such IGBT correspondingly can reduce.Whole process ensure that IGBT can not because of the too high damage of collector voltage.
The value of TVS pipe or voltage-stabiliser tube is chosen to be needed to consider in conjunction with IGBT device itself and application actual conditions, and itself carry out safeguard measure to ACL and IGBT gate pole in addition, the overtension of coming to prevent diode causes chip or IGBT to damage.
The T-shaped three level IGBT drive circuit of a kind of plug and play being applied to photovoltaic combining inverter that the above embodiment of the present invention proposes; be designed with the functions such as active-clamp, short-circuit protection, gate pole protection; there is the advantages such as security reliability is high, control accuracy is high, system loss is little, easy to use, be applied to and drive in photovoltaic combining inverter.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent device or equivalent method conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. a T-shaped three level IGBT drive circuit, for driving three-level topology module (1), comprise the gate circuit (4) be connected with three-level topology module (1), described gate circuit (4) comprises IGBT gate drive circuit, for low-voltage IGBT switch controlling signal being converted into the voltage signal that can drive IGBT switch; It is characterized in that: also comprise overvoltage crowbar (3), secondary limit signal processing module (2), described in.Overvoltage crowbar (3) is connected with time limit signal processing module (2) with three-level topology module (1) respectively, overvoltage crowbar (3) comprises active clamping circuir, and due to voltage spikes when this active clamping circuir is turned off IGBT by the transient suppression device with fast response characteristic effectively suppresses; Described time limit signal processing module (2) at least has collector voltage monitoring function.
2. T-shaped three level IGBT drive circuit as claimed in claim 1; secondary limit signal processing module (2) comprises-secondary limit signal processing chip and peripheral circuit thereof, and described limit signal processing module also can realize at least one in following function: signal processing function, short-circuit protection function, IGBT open shutoff voltage regulatory function, under-voltage protection function, fault management capability, IGBT gate electrode drive signals transformation function.
3. T-shaped three level IGBT drive circuit as claimed in claim 2, it is characterized in that: described gate circuit (4) also comprises IGBT and opens pass resistance break split circuit, IGBT gate pole protective circuit, described IGBT opens and closes resistance break split circuit for gate electrode resistance being separated into open resistance and closing resistance break, service time and the turn-off time of IGBT can be adjusted respectively by open resistance and the resistance of closing resistance break, and the effect of dispersion switching power loss can be played; Gate pole is connected with power supply potential by diode by IGBT gate pole protective circuit, makes gate voltage be clamped at below supply voltage; By bi-directional voltage stabilizing pipe, gate pole is connected with emitter, makes VGE be in a stationary value.
4. T-shaped three level IGBT drive circuit as claimed in claim 2, it is characterized in that: described overvoltage crowbar (3) also comprises short-circuit protection circuit, judge whether IGBT is short-circuited fault by real-time detected set electrode voltage, the situation once be short-circuited, short-circuit protection circuit coordinates chip export fault-signal and turn off IGBT; Described overvoltage crowbar (3) also comprises electric voltage observation circuit, includes VCE observation circuit and active-clamp observation circuit in short-circuit protection function, plays the effect of information feed back respectively in short-circuit protection function and active-clamp function.
5. T-shaped three level IGBT drive circuit as claimed in claim 1, is characterized in that: also comprise plug-and-play feature module, for described T-shaped three level IGBT drive circuit is formed drive plate, is directly connected on IGBT by drive plate.
6. T-shaped three level IGBT drive circuit as claimed in claim 2, is characterized in that: described active clamping circuir, and realize active-clamp function with multiple TVS pipe series connection, this active-clamp at least comprises an ambipolar transient suppressor.
7. T-shaped three level IGBT drive circuit as claimed in claim 6, it is characterized in that: described active clamping circuir, comprise the first to the 3rd resistance (R7, R8, R9), electric capacity (C2), first and second diode (D12, D13), TVS pipe (D11), wherein TVS pipe (D11) by least one bipolarity TVS pipe and multiple unipolarity TVS pipe in series, 3rd resistance (R9) is the pull down resistor on time limit signal processing chip active-clamp monitoring port (ACL), second resistance (R8) is the current-limiting resistance on time limit signal processing chip active-clamp monitoring port (ACL), first resistance (R7) and electric capacity (C2) acting in conjunction, for transmitting the change of IGBT collector voltage fast, second diode (D13) is clamping diode, first diode (D12) is used for preventing reverse-conducting in the loop that collector electrode and gate pole are formed.
8. T-shaped three level IGBT drive circuit as claimed in claim 4, is characterized in that: described short-circuit protection circuit, includes the four to six resistance (R4, R6, R10), the 3rd diode (D10); Wherein the 5th resistance (R6) is made up of the resistor network of the indefinite high-tension resistive of quantity or series connection, in order to reduce the IGBT collector voltage being input to chip port, and power consumption dispersible can within tolerance range in single resistance; 6th resistance (R10) is current-limiting resistance, can limit the size of current flowing into chip port; 3rd diode (D10), for clamp, comes that protect IC port input voltage is the highest when IGBT fault can not exceed supply voltage.
9. T-shaped three level IGBT drive circuit as claimed in claim 3, it is characterized in that: described IGBT opens and closes resistance break split circuit, the resistance by external open resistance (R3) and pass resistance break (R2) adjusts service time and the turn-off time of IGBT respectively.
10. T-shaped three level IGBT drive circuit as claimed in claim 3, be is characterized in that: described gate pole protective circuit, is connected by gate pole, makes gate voltage be clamped at below supply voltage by diode (D9) with power supply potential; By bi-directional voltage stabilizing pipe (D6), gate pole is connected with emitter, makes gate potentials be in a stationary value.
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| CN201511028961.4A CN105490511A (en) | 2015-12-31 | 2015-12-31 | T-type three-level IGBT drive circuit |
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| CN201511028961.4A CN105490511A (en) | 2015-12-31 | 2015-12-31 | T-type three-level IGBT drive circuit |
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| CN108829972A (en) * | 2018-06-13 | 2018-11-16 | 张家港首驱动力科技有限公司 | A kind of IGBT drive circuit wires design |
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| CN110098719A (en) * | 2019-06-14 | 2019-08-06 | 山西恒信风光新能源技术有限公司 | Wind power plant transducer power cabinet based on the bipolar IGBT driving structure of separating insulated grid |
| CN110492771A (en) * | 2019-07-12 | 2019-11-22 | 上海大学 | The smallest three-level inverter of Point Charge optimizes pulse method |
| CN110601520A (en) * | 2019-09-02 | 2019-12-20 | 海信（山东）空调有限公司 | PFC overvoltage protection circuit and PFC circuit |
| CN110868062A (en) * | 2019-10-18 | 2020-03-06 | 珠海格力电器股份有限公司 | Novel half-bridge driving circuit and control method thereof |
| CN115825703A (en) * | 2023-02-10 | 2023-03-21 | 烟台台芯电子科技有限公司 | 1-type three-level module testing method and device |
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| CN108062046A (en) * | 2016-11-07 | 2018-05-22 | 佛山市顺德区美的电热电器制造有限公司 | Driving method, driving device and the governor circuit of the on-off circuit of home appliance |
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| CN110098719A (en) * | 2019-06-14 | 2019-08-06 | 山西恒信风光新能源技术有限公司 | Wind power plant transducer power cabinet based on the bipolar IGBT driving structure of separating insulated grid |
| CN110492771A (en) * | 2019-07-12 | 2019-11-22 | 上海大学 | The smallest three-level inverter of Point Charge optimizes pulse method |
| CN110492771B (en) * | 2019-07-12 | 2021-08-10 | 上海大学 | Optimized pulse method for three-level inverter with minimum midpoint charge |
| CN110601520A (en) * | 2019-09-02 | 2019-12-20 | 海信（山东）空调有限公司 | PFC overvoltage protection circuit and PFC circuit |
| CN110868062A (en) * | 2019-10-18 | 2020-03-06 | 珠海格力电器股份有限公司 | Novel half-bridge driving circuit and control method thereof |
| CN110868062B (en) * | 2019-10-18 | 2020-11-27 | 珠海格力电器股份有限公司 | Half-bridge driving circuit and control method thereof |
| CN115825703A (en) * | 2023-02-10 | 2023-03-21 | 烟台台芯电子科技有限公司 | 1-type three-level module testing method and device |
| CN115825703B (en) * | 2023-02-10 | 2023-05-16 | 烟台台芯电子科技有限公司 | 1-type three-level module testing method and equipment |
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