CN110190838A - A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition - Google Patents

A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition Download PDF

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Publication number
CN110190838A
CN110190838A CN201811482601.5A CN201811482601A CN110190838A CN 110190838 A CN110190838 A CN 110190838A CN 201811482601 A CN201811482601 A CN 201811482601A CN 110190838 A CN110190838 A CN 110190838A
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China
Prior art keywords
circuit
short
voltage
sic mosfet
short circuit
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Withdrawn
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CN201811482601.5A
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Chinese (zh)
Inventor
谭国俊
张经纬
耿程飞
何凤有
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China Mining Drives and Automation Co Ltd
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China Mining Drives and Automation Co Ltd
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Priority to CN201811482601.5A priority Critical patent/CN110190838A/en
Publication of CN110190838A publication Critical patent/CN110190838A/en
Priority to CN201921850461.2U priority patent/CN211930609U/en
Priority to CN201911047961.7A priority patent/CN110635792B/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The present invention provides a kind of SiC MOSFET one kind short circuit current suppression circuit and method, comprising: logic control element, driving unit, short-circuit protection unit and drain voltage detection unit.The present invention selects to open the gate drive voltage of transient state by judging whether drain voltage drops to conduction voltage drop, when a kind of short circuit occurs, grid will be clamped in lower driving voltage, output characteristics according to power device, short circuit current will be suppressed, to reduce impact of the short trouble to device, short circuit loss is reduced, short-circuit withstanding time is increased.Furthermore circuit of the present invention does not influence normal opening process, it is ensured that SiC MOSFET opens the rapidity of transient state.

Description

A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition
Technical field
The present invention relates to a kind of SiC MOSFET one kind short circuit current suppression circuit and methods, belong to power electronic technique neck Domain.
Background technique
SiC MOSFET is as third generation power semiconductor, with low on-resistance, high breakdown field strength, switch speed The advantages that rate is high, and switching loss is small, thermostabilization is considered as the switching device that Si IGBT can be replaced ideal in the future, becomes The leading device of the following power inverter.However the short-circuit withstanding time of SiC MOSFET is relatively short, compared to same size Si IGBT considerably increase short circuit loss since its excessively high grid voltage makes the short circuit current of SiC MOSFET bigger And junction temperature rise, thus short-circuit withstanding time is much smaller than SiIGBT, this provides for improved to SiC MOSFET short-circuit protection circuit It is required that.Traditional short-circuit protection circuit and its method is studied in terms of the rapidity of short-circuit protection, but for one kind The protection of short trouble guarantees that short-circuit protection circuit can be suitably used for various types of SiC MOSFET in order to avoid reporting failure by mistake And a variety of occasions, it usually needs the longer blanking time is set, the short trouble duration is caused to be extended, even if by setting Setting certain method reduces the blanking time, or when other detection methods of use, can all greatly increase the cost of driving circuit and answer Miscellaneous degree.
Summary of the invention
The present invention is directed to overcome the shortcomings of in the prior art, a kind of SiC MOSFET one kind short circuit current suppression circuit is proposed And method.The circuit can reduce short circuit current under the premise of not influencing normally to open performance, improve SiC MOSFET short circuit Tolerance time, technical solution are as follows:
A kind of SiC MOSFET one kind short circuit current suppression circuit and method, comprising: logic control element, driving unit, Short-circuit protection unit and drain voltage detection unit, it is characterised in that:
The short-circuit protection unit, for detecting short trouble, and exports fault-signal；
The drain voltage detection unit judges drain voltage for detecting the drain voltage of SiC MOSFET to be measured Whether enter conduction voltage drop state, and exports drain electrode status signal.
The driving unit, the driving voltage for opening and turning off to SiC MOSFET grid to be measured offer, and Driving voltage is reduced when short circuit occurs；
The logic control element, for carrying out logical groups to fault-signal, drain electrode status signal and switching signal It closes, exports logic control signal；
As an improvement of the present invention, the logic control element can be used digit chip CPLD/FPGA realization and patrol Volume control can also be used and build analog circuit with, NOT gate and realize logic control.
As an improvement of the present invention, the driving unit includes two positive electricity source circuits and a negative supply electricity Road, one of them biggish positive supply and negative supply are for providing the SiC MOSFET to be measured grid for normally turning on and off state Voltage, another lesser positive supply are used to limit grid voltage when a kind of short circuit occurs.
As an improvement of the present invention, the driving unit is to guarantee that SiC MOSFET to be measured opens rate, smaller The grid resistance of positive electricity source circuit is less than the grid resistance of biggish positive electricity source circuit.
As an improvement of the present invention, the drain voltage detection unit will be examined using quick high-pressure diode circuit Slowdown monitoring circuit is isolated with drain electrode high voltage, drain voltage detection unit and the short-circuit protection units shared diode circuit.
A kind of method for inhibiting short circuit current are as follows: a kind of short circuit occurs to open transient state in SiC MOSFET；Drain electrode electricity Detection unit real-time detection drain voltage is pressed, opens transient state initial stage in SiC MOSFET, drain voltage is higher, and driving unit is to grid Pole provides lesser positive supply, and when drain electrode drops to conduction voltage drop, driving unit provides biggish positive supply to grid, guarantees The normally of SiC MOSFET and lower conduction loss；When a kind of short circuit occurs, since drain voltage remains For high-voltage state, driving unit provides lesser driving voltage to grid always, smaller according to the output characteristics of power device The corresponding short circuit current of driving voltage will reduce, to inhibit short circuit current.
Compared with prior art, the invention has the following advantages that circuit of the present invention adds less device in conventional ADS driving Part can inhibit a kind of short circuit current, to reduce impact of the short trouble to device, reduce short circuit loss, improve Short-circuit tolerance, by the way that grid resistance parameter is arranged, can guarantee that SiC MOSFET is just normally opened in normal course of operation Logical rate.
Detailed description of the invention
Below with reference to attached drawing, the invention will be further described:
Fig. 1 is structural block diagram of the invention；
Fig. 2 is circuit diagram of the invention；
Fig. 3 is SiC MOSFET transfer characteristic curve schematic diagram；
Fig. 4 is the simulation waveform that the present invention normally opens；
Fig. 5 is a kind of short-circuit simulation waveform diagram of the present invention；
Specific embodiment:
In order to be more clearly understood that the content of present invention, with reference to the accompanying drawing and specific embodiment carries out the present invention Explanation.
Each unit connection relationship of the present invention is shown referring to Fig.1.
It include: logic control element, driving unit, short-circuit protection unit and drain voltage detection unit, in which: logic Control unit first input end is connected with driving switch signal, the second input terminal of logic control element and short-circuit protection unit first Output end, short circuit fault signal are connected, logic control element third input terminal and drain voltage detection unit the first output end phase Even, the first output end of logic control element, second output terminal are connected with driving unit first input end, the second input terminal respectively, Logic control element third output end is connected with short-circuit protection unit first input end, the second input terminal of short-circuit protection unit and leakage Pole tension detection unit second output terminal is connected, and the drain voltage detection unit first input end and SiC MOSFET to be measured leak Extremely it is connected, the first output end of driving unit is connected with SiC MOSFET grid to be measured.
The specific device principle figure of each unit provided in this embodiment is as shown in Figure 2.
Short-circuit protection unit for detecting short trouble, and exports fault-signal, comprising: the first NAND gate GNAND1, two poles Pipe D1, resistance R1, resistance R2, capacitor C1With comparator U1；Wherein, the first NAND gate GNAND1First input end and driving positive electricity Source VCC1It is connected, the first NAND gate GNAND1The second input terminal be connected with driving signal PWM, the first NAND gate GNAND1Output end With diode D1Anode be connected, diode D1Cathode and resistance R1One end, capacitor C1One end, resistance R2One end is connected, resistance R1The other end and driving positive supply VCC2It is connected, capacitor C1Other end ground connection, resistance R2The other end and comparator U1Positive input terminal It is connected, comparator U1Export fault-signal FAULT.
Drain voltage detection unit, for detecting the drain voltage of SiC MOSFET to be measured, judge drain voltage whether into Enter conduction voltage drop state, and exports drain electrode status signal.It include: diode D2, diode D3, diode D4, resistance R3, capacitor C2 With comparator U2；Wherein, diode D2Cathode be connected with the drain electrode of SiC MOSFET to be measured, diode D2Anode and two poles Pipe D3Anode, diode D4Anode, resistance R3One end, capacitor C2One end, comparator U1Negative input end, comparator U2 Negative input end be connected, diode D3Cathode and resistance R3The other end, driving positive supply VCC2It is connected, capacitor C2The other end With diode D4Plus earth, comparator U2Positive input terminate reference voltage VREF。
Diode D2It for quick high-pressure type diode, is usually formed by several Diode series are equivalent, reverse breakdown electricity Pressure is higher than the voltage rating of SiC MOSFET to be measured, diode D2It will test circuit to be isolated with drain electrode high voltage, diode D3, diode D4, resistance R3With capacitor C2Clamp circuit is formed, for limiting comparator U2With comparator U1Input voltage, leakage Pole tension detection unit and short-circuit protection units shared diode D2And clamp circuit；Reference voltage VREFLess than driving power VCC2。
Driving unit, the driving voltage for opening and turning off to SiC MOSFET grid to be measured offer, and occurring Driving voltage is reduced when short-circuit, comprising: p-type MOS M1, p-type MOS M2, N-type MOS M3, grid resistance Rg1, grid resistance Rg2、 Grid resistance Rg3, diode Dg1, in which: grid resistance Rg1One end and diode Dg1Cathode, grid resistance Rg3One End, SiCMOSFET grid to be measured are connected, grid resistance Rg1The other end and p-type MOS M1Drain electrode be connected, p-type MOS M1's Source electrode meets driving positive supply VCC1, diode Dg1Anode and grid resistance Rg2One end be connected, grid resistance Rg2The other end With p-type MOS M2Drain electrode be connected, P type MOS M2Source electrode connect driving positive supply VCC2, grid resistance Rg3The other end and N-type MOS M3Drain electrode be connected, with N-type MOS M3Source electrode connect driving negative supply VEE。
Drive positive supply VCC1Greater than driving positive supply VCC2, drive positive supply VCC1With driving negative supply VEESiC to be measured is provided The grid voltage of MOSFET normally and off state drives positive supply VCC2For limiting grid when a kind of short circuit occurs Voltage；Diode Dg1For preventing driving positive supply VCC1To driving positive supply VCC2Convey electric current.
Rate, R are opened for guarantee is higherg3It must be smaller than Rg1, the grid voltage V in the stageGIt is expressed by following formula:
Wherein CissFor SiC MOSFET input capacitance.
And conventional drive method directlys adopt driving positive supply VCC1It powers to grid, thus grid voltage are as follows:
Rate is opened in order to guarantee that the present invention does not influence SiC MOSFET, formula (1) and formula (2) must be equal, utilize Taylor's formula obtains resistance Rg2Value about are as follows:
Logic control element, for carrying out logical combination, output to fault-signal, drain electrode status signal and switching signal Logic control signal；Digit chip FPGA or CPLD can be used and realize logic control, can also be used and build analog circuit with, NOT gate Realize logic control；The present embodiment uses the analog circuit built with, NOT gate, comprising: the second NAND gate GNAND2, first and door GAND1With the first NOT gate GINV1；Wherein, driving signal PWM and first and door GAND1First input end be connected, fault-signal FAULT and first and door GAND1The second input terminal, comparator U1Output end be connected, first with door GAND1Output end and One NOT gate GINV1Input terminal, the second NAND gate GNAND2First input end be connected, the second NAND gate GNAND2The second input terminal With comparator U2Output end be connected, the second NAND gate GNAND2Output end and p-type MOS M1Grid be connected, the first NOT gate Output end and p-type MOS M2Grid, p-type MOS M3Grid be connected.
The output characteristics of the SiC MOSFET of the present embodiment according to Fig.3, introduces grid voltage to the shadow of short circuit current It rings.
The output characteristics of SiC MOSFET is divided into cut-off region, saturation region and linear zone.SiC MOSFET opens transient state by cutting Only area enters saturation region, enters back into ohmic region and begins to turn on；When a kind of short circuit occurs, SiC MOSFET is by cut-off region After entering saturation region, saturation region will be always worked in；As can be seen that in saturation region drain voltage VDSIn identical situation, leakage Electrode current IDWith grid voltage VGRaising and increase, thus by reduce grid voltage can effectively reduce drain short circuit electricity Stream.
The working principle of the present embodiment is introduced below with reference to Fig. 2.
When SiC MOSFET is off state, driving signal PWM is low level, the first NAND gate GNAND1Output voltage is VCC1, then the positive input terminal voltage of comparator U1 is VCC1, due to drain voltage VDSFor system busbar voltage, then a point voltage is VCC2 With diode D3The sum of conduction voltage drop, the positive input terminal voltage less than comparator U1, but be more than reference voltage VREF, thus Comparator U1Output is high level, comparator U2Output is low level, and logic control element is by M1And M2Shutdown, and open M3, then Grid voltage is VEE, SiC MOSFET is in cut-off region, drain current IDIt is 0.
When driving signal PWM is high level by low transition, SiC MOSFET, which enters, opens transient state, logic control list Member is by M3Shutdown, and by M2Open-minded, driving unit provides positive driving voltage V to gridcc1, SiC MOSFET is first by cut-off region Into saturation region, drain current IDIt begins to ramp up, drain voltage VDSIt is influenced by external stray inductance, although being declined, It is still high voltage, thus a point voltage is constant, comparator U2Export constant, logic control element makes M1It is held off.
And when SiC MOSFET enters ohmic region by saturation region, VDSDrop to conduction voltage drop Vsat, a point voltage will under It is down to SiC MOSFET conduction voltage drop VsatWith D2The sum of conduction voltage drop, the voltage is less than V at this timeREF, thus U1Negative output terminal Voltage remains high level, and U2Negative output terminal voltage be converted to high level, M is made by logic unit1Conducting, driving unit Positive driving voltage V is provided to gridCC1, SiC MOSFET enters beginning normally.
The variation of driving signal PWM is so that the first NAND gate GNAND1Output is low level, by diode D1Reversed cut-off Characteristic, comparator U1Positive input terminal voltage is begun to decline, and eventually drops to VCC2, timeconstantτ=R of decline1C1, the time is normal Number τ is the blanking time of conventional short-circuit guard method.
When SiC MOSFET is positive normal opening process, simulation waveform is as shown in figure 4, drain current IDRise to load electricity After stream, drain voltage VDSStart decline, SiC MOSFET rapidly to enter linear zone by saturation region, work as VDSDrop to conducting pressure After drop, a point voltage is reduced, and is less than VREF, comparator U2 is converted to low level, keeps M1 open-minded, reversely ended by diode Dg1 Characteristic, driving positive supply VCC2 are ended, and driving positive supply VCC1 starts to power to grid, and remain to SiC MOSFET shutdown Moment.By the way that higher R is arranged1And C1, increase timeconstantτ, make comparator U1The decline of positive input terminal voltage slows down, to guarantee It is higher than negative input end voltage under normal opening state, prevents short-circuit protection unit from reporting failure by mistake.
When a kind of short circuit occurs for SiC MOSFET, simulation waveform is as shown in figure 5, drain current IDContinue to rise rapidly, Drain voltage VDSRestore to system busbar voltage rapidly, thus SiC MOSFET is in saturation region always, a point voltage is still VCC2 With diode D3The sum of conduction voltage drop, comparator U2Exporting is low level, thus M1It will not open, grid voltage is still VCC2, Short circuit current IDUp to grid voltage VG=VCC2When corresponding maximum current value, so that short circuit current is inhibited, until warp After having spent the blanking time, comparator U1Positive input terminal voltage drop to VCC2, comparator U1Output end be converted to low level, it is defeated Be out of order signal FAULT, and makes M by logic control element2Shutdown, M3Open-minded, SiC MOSFET is closed in driving.
It should be noted that above-described embodiment is only presently preferred embodiments of the present invention, there is no for the purpose of limiting the invention Protection scope, the equivalent substitution or substitution made based on the above technical solution all belong to the scope of protection of the present invention.

Claims (6)

1. a kind of SiC MOSFET one kind short circuit current suppression circuit and method, comprising: logic control element, driving unit are short Road protection location and drain voltage detection unit, it is characterised in that:
The short-circuit protection unit, for detecting short trouble, and exports fault-signal；
Whether the drain voltage detection unit judges drain voltage for detecting the drain voltage of SiC MOSFET to be measured Into conduction voltage drop state, and export drain electrode status signal.
The driving unit, the driving voltage for opening and turning off to SiC MOSFET grid to be measured offer, and sending out Driving voltage is reduced when raw short circuit；
The logic control element, for carrying out logical combination to fault-signal, drain electrode status signal and switching signal, to Driving unit exports logic control signal.
2. a kind of SiC MOSFET one kind short circuit current suppression circuit according to claim 1 and method, which is characterized in that The logic control element realizes logic control using digit chip CPLD, can also be used and builds analog circuit reality with, NOT gate Existing logic control.
3. a kind of SiC MOSFET one kind short circuit current suppression circuit according to claim 1 and method, which is characterized in that The driving unit includes two positive electricity source circuits and a negative electricity source circuit, one of them biggish positive supply and negative supply For providing the grid voltage of SiC MOSFET normally and off state to be measured, another lesser positive supply is for sending out Grid voltage is limited when raw a kind of short circuit.
4. a kind of SiC MOSFET one kind short circuit current suppression circuit according to claim 3 and method, which is characterized in that The driving unit is to guarantee that SiC MOSFET to be measured opens rate, and the grid resistance of smaller positive electricity source circuit is less than larger Positive electricity source circuit grid resistance.
5. a kind of SiC MOSFET one kind short circuit current suppression circuit according to claim 1 and method, which is characterized in that The drain voltage detection unit will test circuit using quick high-pressure diode circuit and be isolated with drain electrode high voltage, drain Voltage detection unit and the short-circuit protection units shared diode circuit.
6. a kind of SiC MOSFET one kind short circuit current suppression circuit according to claim 1 and method, which is characterized in that A kind of method for inhibiting short circuit current are as follows: a kind of short circuit occurs to open transient state in SiC MOSFET, and drain voltage detection is single First real-time detection drain voltage opens transient state initial stage in SiC MOSFET, and drain voltage is higher, driving unit to grid provide compared with Small positive supply, when drain electrode drops to conduction voltage drop, driving unit provides biggish positive supply to grid, guarantees SiC The normally of MOSFET and lower conduction loss；When a kind of short circuit occurs, since drain voltage remains high Voltage status, driving unit provide lesser driving voltage to grid always, according to the output characteristics of power device, lesser drive The dynamic corresponding short circuit current of voltage will reduce, to inhibit short circuit current.
CN201811482601.5A 2018-12-05 2018-12-05 A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition Withdrawn CN110190838A (en)

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CN201811482601.5A CN110190838A (en) 2018-12-05 2018-12-05 A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition
CN201921850461.2U CN211930609U (en) 2018-12-05 2019-10-30 SiC MOSFET short-circuit protection circuit based on short-circuit current suppression
CN201911047961.7A CN110635792B (en) 2018-12-05 2019-10-30 SiC MOSFET short-circuit protection circuit and method based on short-circuit current inhibition

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CN201921850461.2U Active CN211930609U (en) 2018-12-05 2019-10-30 SiC MOSFET short-circuit protection circuit based on short-circuit current suppression
CN201911047961.7A Active CN110635792B (en) 2018-12-05 2019-10-30 SiC MOSFET short-circuit protection circuit and method based on short-circuit current inhibition

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Application publication date: 20190830