CN111313874A - Current detection device for SiC MOSFET and short-circuit protection method - Google Patents
Current detection device for SiC MOSFET and short-circuit protection method Download PDFInfo
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- CN111313874A CN111313874A CN202010190894.0A CN202010190894A CN111313874A CN 111313874 A CN111313874 A CN 111313874A CN 202010190894 A CN202010190894 A CN 202010190894A CN 111313874 A CN111313874 A CN 111313874A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16528—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values using digital techniques or performing arithmetic operations
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16571—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
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Abstract
A current detection device and a short-circuit protection method for a SiC MOSFET are characterized in that induced electromotive force corresponding to drain or source current of the SiC MOSFET is generated by a plurality of circles of non-transformer rings led out in a Kelvin connection mode and arranged at drain or source pins of the SiC MOSFET in a circuit loop in a surrounding mode, a signal processing circuit converts the induced electromotive force generated by the plurality of circles of non-transformer rings into current signals required for detection, a feedback control circuit compares the detected current signals with a short-circuit current threshold value, if the current signals are larger than the short-circuit current threshold value, short circuit is judged to occur, and driving signals of the corresponding SiC MOSFET are turned off. The invention realizes the rapid drain-source current detection of the SiC MOSFET, has more accurate and reliable measuring result, eliminates longer short circuit detection blind area, reduces the impact of thermal effect generated in a short circuit continuous state on a power chip, and has simple and easy-to-realize circuit.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a current detection device and a short-circuit protection method for a SiC MOSFET.
Background
SiC (silicon carbide) MOSFETs (metal oxide semiconductor field effect transistors) are now widely used as novel power electronic devices due to their advantages of high switching speed, low loss, etc. The safety and the reliability are the precondition of normal work of the power electronic device, and the rapid and accurate short circuit detection and protection method can effectively protect the power device.
At present, a short-circuit protection method of a power device is mainly a desaturation method, and the main principle is to judge whether the power device enters a desaturation state or not by detecting the change of conduction voltage drop. The method is simple and practical, and is very suitable for short-circuit protection of IGBT (insulated gate bipolar transistor). When the IGBT is normally switched on, the change degree of the collector-emitter voltage along with the collector current is very small, even when the IGBT is subjected to overcurrent, the collector-emitter voltage keeps low potential as long as the IGBT does not exit a saturation region, the driving voltage can be relatively low, and the short-circuit current cannot be too high, so that the IGBT can bear relatively long short-circuit time. However, when the SiC MOSFET is in a saturation region, the rising degree of the drain-source voltage along with the drain current is much higher than that of the IGBT, and therefore, the on-state voltage drop needs to be reduced by increasing the driving voltage. Even if the SiC MOSFET adopts a desaturation method to realize short-circuit protection, the damage to the device can be increased, and the service life is shortened. In addition, when a short circuit is detected, under the influence of the switch state, the desaturation method needs to protect after the switch-on is finished, and false alarm faults caused by the transient switch-on process and switch oscillation are avoided, so that a certain blanking time is usually reserved. Because the conduction characteristic of the SiC MOSFET is greatly influenced by junction temperature, the current change is large when the fault is detected by desaturation at different junction temperatures, and misoperation is easily caused.
Disclosure of Invention
The invention provides a current detection device and a short-circuit protection method for a SiC MOSFET (metal oxide semiconductor field effect transistor). the rapid drain-source current detection of the SiC MOSFET is realized through a transformerless ring, the measurement result is more accurate and reliable, a longer short-circuit detection blind area is eliminated, the impact of thermal effect generated in a short-circuit continuous state on a power chip is reduced, and the circuit is simple and easy to realize.
In order to achieve the above object, the present invention provides a fast current detection apparatus for a SiC MOSFET, comprising:
the current detection circuit comprises at least one multi-turn transformerless ring, the multi-turn transformerless ring surrounds a drain electrode or a source electrode pin of the SiC MOSFET in the circuit loop and is led out in a Kelvin connection method, and the multi-turn transformerless ring is used for generating corresponding induced electromotive force according to the drain electrode or the source electrode current of the SiC MOSFET;
the signal processing circuit is connected with two ends of the multi-turn transformerless ring and is used for converting induced electromotive force generated by the multi-turn transformerless ring into a current signal required by detection;
and the feedback control circuit is connected with the signal processing circuit and the grid drive circuit of the SiC MOSFET and is used for comparing the detected current signal with a short-circuit current threshold value to judge whether short circuit occurs or not, and if the short circuit occurs, the feedback control circuit cuts off the drive signal of the grid drive circuit of the SiCMOS MOSFET.
The signal processing circuit at least comprises an integrating circuit, a filter circuit, an amplifying circuit and a rectifying circuit.
The integration circuit adopts a passive integration circuit or an active integration circuit;
the filter circuit adopts a high-pass filter circuit;
the rectification circuit adopts a half-wave rectification circuit, a full-wave rectification circuit or a bridge rectification circuit.
The feedback control circuit comprises: the current sampling circuit samples to obtain a digital current signal, and the digital controller compares the digital current signal with a short-circuit current threshold value and performs corresponding feedback control action according to a comparison result.
The feedback control circuit comprises: the analog comparator compares the current signal with the short-circuit current threshold value, and the digital controller performs corresponding feedback control action according to the comparison result.
The invention also provides a short-circuit protection method for the SiC MOSFET, which comprises the following steps:
the signal processing circuit converts induced electromotive force generated by the multi-turn transformerless ring into a current signal required for detection by surrounding a drain electrode or a source electrode pin of the SiC MOSFET in a circuit loop and generating induced electromotive force corresponding to drain electrode or source electrode current of the SiC MOSFET by the multi-turn transformerless ring led out in a Kelvin connection method, the feedback control circuit compares the detected current signal with a short-circuit current threshold value, if the current signal is greater than the short-circuit current threshold value, the short circuit is judged to occur, and a driving signal of a gate driving circuit of the corresponding SiC MOSFET is turned off.
The method for converting the induced electromotive force into the current signal by the signal processing circuit comprises the following steps: the integration circuit performs integration reduction on the induced electromotive force signal to obtain a current signal, the filter circuit and the amplifying circuit condition the current signal, and the rectifying circuit rectifies the current signal to obtain a final signal.
The method for comparing and judging the feedback control circuit comprises the following steps: the current sampling circuit samples to obtain a digital current signal, the digital controller compares the digital current signal with a short-circuit current threshold value, and if the digital current signal is greater than the short-circuit current threshold value, a driving signal of a corresponding gate driving circuit of the SiC MOSFET is switched off.
The method for comparing and judging the feedback control circuit comprises the following steps: the analog comparator compares the current signal with a short-circuit current threshold, if the current signal is greater than the short-circuit current threshold, a signal is output to the digital controller, and the digital controller receives the signal and turns off a driving signal of a gate driving circuit of the corresponding SiC MOSFET.
The invention has the following advantages:
1. and the rapid detection of drain and source currents of the SiC MOSFET is realized through a transformerless ring.
2. The measuring error caused by an external magnetic field of the traditional transformerless ring can be eliminated, so that the measuring result is more accurate and reliable.
3. Compared with the traditional desaturation short circuit detection, the short circuit detection device eliminates a longer short circuit detection blind area, can be switched off when the drain current does not reach the maximum current through reasonably setting a short circuit current threshold value, and therefore impact of thermal effect generated in a short circuit continuous state on a power chip is reduced.
4. The hardware scheme is simple and easy to realize.
Drawings
Fig. 1 is a schematic diagram of a digital operation mode of a current detection device for a SiC MOSFET provided by the present invention.
Fig. 2 is a schematic diagram of a simulation operation mode of the current detection device for the SiC MOSFET provided by the present invention.
Fig. 3A-3F are schematic diagrams of the arrangement of the multi-turn transformerless loop of the present invention in a SiC MOSFET circuit loop.
Fig. 4A to 4C are schematic diagrams of a rectifier circuit of the present invention.
Fig. 5 is a digital operation flow diagram of the feedback control circuit of the present invention.
Fig. 6 is an analog workflow diagram of the feedback control circuit of the present invention.
Detailed Description
The preferred embodiment of the present invention will be described in detail below with reference to fig. 1 to 6.
In the operation process of the SiC MOSFET system, no matter short-circuit fault or overcurrent fault, as long as the drain current is higher than a rated threshold value, the system needs to protect the SiC MOSFET, so that whether the short-circuit fault occurs in the SiCMOS MOSFET can be judged as long as the current can be determined in real time. Based on this, the invention realizes short-circuit protection by adopting the method of detecting the drain current of the SiCSMOSFET without the transformer ring and the peripheral circuit thereof, and the method is not influenced by junction temperature and can detect the short-circuit current in time. The current detection method can also perform current on-line monitoring in real time, can realize fault detection related to drain current, and expands the function of a driver. The measuring frequency band of the transformerless loop is wide, the volume is small, and the method has wide application in the aspects of measuring pulse current, alternating current and the like. According to the invention, the drain-source electrode current of the SiC MOSFET is acquired through the printed circuit board type transformerless ring, and the acquired current signal is fed back to a digital controller (FPGA) or an analog comparator in real time through integral reduction, signal conditioning and a rectifying circuit, so that the drain electrode current of the SiC MOSFET is rapidly and reliably detected, and the short-circuit protection of the SiC MOSFET is realized.
The invention provides a rapid current detection device for a SiC MOSFET, which comprises:
the current detection circuit comprises at least one multi-turn transformerless ring, the multi-turn transformerless ring surrounds a drain electrode or a source electrode pin of the SiC MOSFET in the circuit loop and is led out in a Kelvin connection method, and the multi-turn transformerless ring is used for generating corresponding induced electromotive force according to the drain electrode or the source electrode current of the SiC MOSFET;
the signal processing circuit is connected with two ends of the multi-turn transformerless ring and is used for converting induced electromotive force generated by the multi-turn transformerless ring into a current signal required by detection;
and the feedback control circuit is connected with the signal processing circuit and the grid driving circuit and used for comparing the detected current signal with a short-circuit current threshold signal to judge whether a short circuit occurs or not, and if a short-circuit fault occurs at the moment, the feedback control circuit immediately cuts off all driving signals for the grid driving circuit so as to realize short-circuit protection.
Furthermore, the signal processing circuit at least comprises an integrating circuit, a filtering circuit, an amplifying circuit and a rectifying circuit.
As shown in fig. 1 and 2, firstly, induced electromotive force corresponding to a drain or source current of a SiC MOSFET is generated through a multi-turn transformerless loop, and the induced electromotive force generated by the multi-turn transformerless loop represents a current change rate, so that if a current signal is to be acquired, an integration circuit is required to perform integration reduction on the induced electromotive force signal, the signal after the integration reduction is a detected current signal, the current signal is conditioned through a filtering circuit and an amplifying circuit, and finally, the current signal after the signal conditioning is converted into a direct current voltage signal through a rectifying circuit and a resistor, and the direct current voltage signal is compared with a protection threshold value through a feedback control circuit to determine whether a short circuit occurs. The SiC MOSFET drain-source current signal described herein is finally converted into a voltage signal by a rectifier circuit and a resistor, and the voltage signal is input to a high-speed a/D circuit or a high-speed comparator, and for convenience of illustration and understanding, the current signal is compared with a protection threshold value for determination.
As shown in fig. 3A to 3F, in one embodiment of the present invention, in a half-bridge, a single-phase full-bridge, a three-phase full-bridge, etc. and other various power electronic topologies constructed by SiC MOSFETs, SiC MOSFETs (Q) are in a circuit loop1～Q4) The multi-turn transformer-free ring T is drawn at the pin of the drain electrode or the source electrode and needs to be led out by a Kelvin connection method, so that the voltage drop generated on a wire is eliminated, and the measurement and the protection are more accurate and reliable. The current detection principle is that a magnetic field which can be changed is arranged around a current conductor, a coil is arranged on a closed path surrounding the current magnetic field, and corresponding induced electromotive force can be generated at two ends of the coil according to the electromagnetic induction law.
The vertical cross section of the multi-turn transformerless ring is circular or square, so that the analysis is simple and convenient, and the shape derivation is convenient.
If the magnetic field on the square section S is equal everywhere, the number of turns of the coil is N, and the coil is uniformly wound along the closed loop. According to the ampere-loop theorem, the magnetic field strength at the position r away from the outer side of the current-carrying conductor is as follows:
the magnetic flux generated in the coil around the current carrying conductor is:
according to Faraday's law of electromagnetic induction, the induced electromotive force at two ends of the coil is:
wherein N is the total number of turns of the coil; a and b are respectively the inner diameter and the outer diameter of the coil; h is the thickness of the coil; mu is magnetic conductivity;
is the mutual inductance coefficient;
the resulting current was:
i(t)＝-M∫e(t)dt (1-4)
from the equations (1-3), it can be seen that the voltage induced across the coil is proportional to the rate of change of current in the conductor. The original current can be reduced after integration through the formula (1-4).
The integration circuit can be realized by building a hardware circuit through an analog device, and can also be realized by programming through an FPGA (field programmable gate array) by utilizing a program. The two have their advantages and disadvantages, and the required current signal can be obtained after integration.
In an embodiment of the present invention, the integration circuit generally employs a composite integration circuit, which may employ a passive integration circuit composed of a resistor and a capacitor for restoring a transformerless ring intermediate frequency signal, or an active integration circuit for restoring a low frequency signal.
In one embodiment of the present invention, the filtering circuit generally employs a high-pass filtering circuit for filtering the integrated signal.
In one embodiment of the invention, the amplifying circuit enables the output of signals to be matched with the level grade of an FPGA of the system, and the output of the signals is usually 0-3.3V. The amplifying circuit part can adopt high-precision, low-noise and rail-to-rail operational amplifiers such as OPA2188, MCP6002 and the like.
In one embodiment of the present invention, the rectification circuit may generally adopt half-wave rectification (fig. 4A), full-wave rectification (fig. 4B), bridge rectification (fig. 4C), and the like. The half-wave rectification needs the least components, but the rectification efficiency is lower; the bridge rectifier circuit needs the most components and parts, has higher rectification efficiency, and overcomes the defects that the full-wave rectifier circuit requires no transformer ring and has a central tap and the like.
After the current collection, integral reduction and signal conditioning, a required current signal can be obtained, the current signal is processed through the rectifying circuit, the obtained signal can accurately reduce the current flowing through the drain or source of the SiC MOSFET, the current signal is converted into a digital signal through high-speed A/D (analog to digital) and is input into the FPGA (field programmable gate array), a reasonable digital value of a short-circuit current threshold value is set through a program, the detected digital value of the current signal is compared with the digital value of the short-circuit current threshold value, whether short-circuit fault occurs at the moment can be judged, and all driving signals are timely turned off through feedback control to realize the short-circuit protection of the SiC MOSFET.
As shown in fig. 1, in an embodiment of the present invention, when the digital mode is adopted, the feedback control circuit includes: the high-speed AD converter comprises a current sampling circuit (a high-speed A/D conversion circuit) and a digital controller (FPGA), wherein the current sampling circuit is connected with the input end of a rectification circuit after signal conditioning, the high-speed AD circuit is connected with the output end of the rectification circuit, and the digital controller (FPGA) is connected with the output end ring of the high-speed A/D conversion circuit. The input signal can change the analog signal into a digital signal through a high-speed A/D conversion circuit, the digital signal is detected through a digital controller (FPGA), and the digital signal of the short-circuit current threshold are judged and processed. And if the digital signal of the sampling value is larger than the digital signal of the threshold value, the short circuit occurs at the moment, and the feedback control circuit immediately closes all the driving signals.
The feedback control circuit can be realized by programming by adopting a flexible FPGA (field programmable gate array) and can also be realized by hardware by using a high-speed comparator through comparison between signals, so that the cost can be reduced.
As shown in fig. 2, in an embodiment of the present invention, when the analog mode is adopted, the feedback control circuit includes: analog comparators (high speed comparators) and digital controllers (FPGAs), which may be FPGAs. The high-speed comparator can adopt LM319, LM360 and the like. And after signal conditioning, the detected current signal and the short-circuit current threshold are respectively input to the in-phase end and the reverse-phase end of the high-speed comparator for comparison, if the voltage of the in-phase end is higher than that of the reverse-phase end, the comparator outputs a high level, otherwise, the comparator outputs a low level. The short circuit current threshold signal may be formed by a circuit including a reference source and a resistor. And inputting the level signal output by the comparator to an IO port of the FPGA. And judging whether a short-circuit fault occurs at the moment by detecting the level state of the IO, if the FPGA detects that the IO signal is high level, the system is short-circuited, and the FPGA immediately turns off a corresponding drive signal of the SiC MOSFET.
The invention also provides a short-circuit protection method for the SiC MOSFET, which comprises the following steps:
s1, arranging the loop around the drain or source pin of the SiC MOSFET in the circuit loop, and generating induced electromotive force corresponding to the drain or source current of the SiC MOSFET by the multi-turn transformerless loop led out by Kelvin connection;
step S2, the signal processing circuit converts the induced electromotive force generated by the multi-turn transformerless ring into a current signal required by detection;
and step S3, the feedback control circuit compares the detected current signal with a short-circuit current threshold value, if the current signal is greater than the short-circuit current threshold value, the short circuit is judged to occur, and the corresponding drive signal of the SiC MOSFET is switched off.
Further, the step S2 includes: the integration circuit performs integration reduction on the induced electromotive force signal to obtain a current signal, the filter circuit and the amplifying circuit condition the current signal, and the rectifying circuit rectifies the current signal to obtain a final current signal.
As shown in fig. 5, in an embodiment of the present invention, the feedback control circuit is implemented in a digital manner, and the step S3 includes the following steps:
the current sampling circuit (high-speed A/D conversion circuit) samples to obtain a digital current signal, the digital current signal is compared with a short-circuit current threshold value by the digital controller (FPGA), and if the digital current signal is larger than the short-circuit current threshold value, the driving signal of the corresponding SiC MOSFET is switched off.
As shown in fig. 6, in an embodiment of the present invention, the feedback control circuit is implemented in an analog manner, and the step S3 includes the following steps:
the analog comparator (high-speed comparator) compares a current signal obtained by sampling without a transformer loop with a short-circuit current threshold value signal, if the sampled current signal is greater than the short-circuit current threshold value, a high level is output, if the current signal is less than the short-circuit current threshold value, a low level is output, the digital controller (FPGA) performs corresponding operation according to the received IO level signal, if the high level is received, the corresponding drive signal of the SiC MOSFET is switched off, and if the low level is received, the drive signal does not act.
Through reasonable setting of the protection threshold value of the short-circuit current, the short-circuit detection and protection control process can be realized quickly and reliably.
The invention has the following advantages:
1. and the rapid detection of drain and source currents of the SiC MOSFET is realized through a transformerless ring.
2. The measurement error of the traditional transformerless ring caused by the external magnetic field can be eliminated, because the induced potentials generated by the external interference magnetic field of the ring have the same magnitude and opposite directions, and the induced potentials are mutually counteracted. And the problems of eccentricity, magnetic saturation and the like of a measured conductor are avoided, so that the measurement result is more accurate and reliable.
3. Compared with the traditional desaturation short circuit detection, the short circuit detection device eliminates a long short circuit detection blind area and can normally be 2.5 times of rated current value by reasonably setting a short circuit current threshold. And the power chip is switched off when the drain-source current does not reach the maximum current, so that the impact of thermal effect generated in a short-circuit continuous state on the power chip is reduced.
4. The hardware scheme is simple and easy to realize.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (9)
1. A fast current sensing apparatus for SiC MOSFETs, comprising:
the current detection circuit comprises at least one multi-turn transformerless ring, the multi-turn transformerless ring surrounds a drain electrode or a source electrode pin of the SiC MOSFET in the circuit loop and is led out in a Kelvin connection method, and the multi-turn transformerless ring is used for generating corresponding induced electromotive force according to the drain electrode or source electrode current of the SiCMOS MOSFET;
the signal processing circuit is connected with two ends of the multi-turn transformerless ring and is used for converting induced electromotive force generated by the multi-turn transformerless ring into a current signal required by detection;
and the feedback control circuit is connected with the signal processing circuit and the grid drive circuit of the SiC MOSFET and is used for comparing the detected current signal with a short-circuit current threshold value to judge whether short circuit occurs or not, and if the short circuit occurs, the feedback control circuit cuts off the drive signal of the grid drive circuit of the SiCMOS MOSFET.
2. The rapid current sensing device for SiC MOSFETs according to claim 1, wherein the signal processing circuit includes at least an integrating circuit, a filter circuit, an amplifying circuit and a rectifying circuit.
3. The rapid current sensing device for SiC MOSFETs according to claim 2, wherein the integration circuit is a passive integration circuit or an active integration circuit;
the filter circuit adopts a high-pass filter circuit;
the rectification circuit adopts a half-wave rectification circuit, a full-wave rectification circuit or a bridge rectification circuit.
4. The fast current sensing apparatus for SiC MOSFETs according to claim 1, wherein the feedback control circuit comprises: the current sampling circuit samples to obtain a digital current signal, and the digital controller compares the digital current signal with a short-circuit current threshold value and performs corresponding feedback control action according to a comparison result.
5. The fast current sensing apparatus for SiC MOSFETs according to claim 1, wherein the feedback control circuit comprises: the analog comparator compares the current signal with the short-circuit current threshold value, and the digital controller makes corresponding feedback control action according to the comparison result.
6. A short-circuit protection method using the rapid current detection device for SiC MOSFET according to any one of claims 1 to 5, comprising the steps of:
the signal processing circuit converts induced electromotive force generated by the multi-turn transformerless ring into a current signal required for detection by surrounding a drain electrode or a source electrode pin of the SiC MOSFET in a circuit loop and generating induced electromotive force corresponding to drain electrode or source electrode current of the SiC MOSFET by the multi-turn transformerless ring led out in a Kelvin connection method, the feedback control circuit compares the detected current signal with a short-circuit current threshold value, if the current signal is greater than the short-circuit current threshold value, the short circuit is judged to occur, and a driving signal of a gate driving circuit of the corresponding SiC MOSFET is turned off.
7. The short-circuit protection method for the SiC MOSFET of claim 6, wherein the method of the signal processing circuit converting the induced electromotive force into the current signal comprises: the integration circuit performs integration reduction on the induced electromotive force signal to obtain a current signal, the filter circuit and the amplifying circuit condition the current signal, and the rectifying circuit rectifies the current signal to obtain a final signal.
8. The short-circuit protection method for the SiC MOSFET of claim 6, wherein the method of the feedback control circuit for making the comparison judgment comprises: the current sampling circuit samples to obtain a digital current signal, the digital controller compares the digital current signal with a short-circuit current threshold value, and if the digital current signal is greater than the short-circuit current threshold value, a driving signal of a corresponding gate driving circuit of the SiC MOSFET is switched off.
9. The short-circuit protection method for the SiC MOSFET of claim 6, wherein the method of the feedback control circuit for making the comparison judgment comprises: the analog comparator compares the current signal with a short-circuit current threshold, if the current signal is greater than the short-circuit current threshold, a signal is output to the digital controller, and the digital controller receives the signal and turns off a driving signal of a gate driving circuit of the corresponding SiC MOSFET.
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| CN113067565A (en) * | 2021-02-26 | 2021-07-02 | 中国科学院上海微系统与信息技术研究所 | Anti-interference short-circuit protection circuit with adjustable blanking time for SiC MOSFET |
| US20210208195A1 (en) * | 2018-09-18 | 2021-07-08 | Denso Corporation | Circuit fault detection apparatus |
| CN113589128A (en) * | 2021-08-06 | 2021-11-02 | 湖南大学 | Short-circuit fault detection method for SiC MOSFET power module |
| CN113839653A (en) * | 2021-09-29 | 2021-12-24 | 陕西省地方电力（集团）有限公司 | SiC MOSFET drive circuit based on pure hardware device overcurrent protection |
| CN115441858A (en) * | 2022-08-21 | 2022-12-06 | 嘉晨云控新能源(上海)有限公司 | SiC MOSFET short-circuit protection method |
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