CN113839653B - SiC MOSFET driving circuit based on overcurrent protection of pure hardware device - Google Patents
SiC MOSFET driving circuit based on overcurrent protection of pure hardware device Download PDFInfo
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- CN113839653B CN113839653B CN202111153240.1A CN202111153240A CN113839653B CN 113839653 B CN113839653 B CN 113839653B CN 202111153240 A CN202111153240 A CN 202111153240A CN 113839653 B CN113839653 B CN 113839653B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses an over-current protection SiC MOSFET driving circuit based on a pure hardware device, which relates to the field of protection circuits and comprises a control module, a PWM output buffer circuit, a driving circuit and an over-current and short-circuit protection circuit, wherein the PWM output buffer circuit and the over-current and short-circuit protection circuit are connected with the control module, the PWM output buffer circuit and the output of the over-current and short-circuit protection circuit are connected with the input of the driving circuit, the driving circuit and the over-current and short-circuit protection circuit are connected with an SiC MOSFET, the source electrode of the SiC MOSFET is connected with a resistor in series to detect current, a current signal is converted into a voltage signal, an LM211 comparator is used for comparing the current signal with a preset value, the comparison signal is directly connected into the enabling end of the SiC MOSFET driving chip after being subjected to optocoupler isolation output, the protection is directly carried out on the side of the SiC MOSFET driving chip, and the other optocoupler isolation output is connected with a hardware protection interrupt pin of a main control module at the same time, and double protection is carried out.
Description
Technical Field
The invention relates to the field of protection circuits, in particular to a SiC MOSFET driving circuit based on overcurrent protection of a pure hardware device.
Background
Compared with the traditional Si MOSFET, the SiC MOSFET has smaller on-resistance and lower switching loss, is suitable for higher working frequency, greatly improves high-temperature stability due to the high-temperature working characteristic, and can be used for high-voltage, high-temperature, high-efficiency and high-power density application occasions which cannot be related by the traditional Si MOSFET.
However, since SiC MOSFETs are much more expensive than conventional Si MOSFETs, high performance and high cost are also brought about, and in the actual use process, cases of SiC MOSFET damage are often rare due to faults such as SiC MOSFET overcurrent and short circuit caused by untimely control, external interference and the like.
Disclosure of Invention
The invention aims to provide an SiC MOSFET driving circuit based on overcurrent protection of a pure hardware device, which is characterized in that a resistor is connected in series with a source electrode of an SiC MOSFET to detect current, a current signal is converted into a voltage signal, an LM211 comparator is used for comparing the voltage signal with a preset value, the comparison signal is output through optical coupling isolation and then is directly connected into an enabling end of an SiC MOSFET driving chip to directly protect the SiC MOSFET driving chip, and meanwhile, the other optical coupling isolation output is connected into a hardware protection interrupt pin of a main control module to realize double protection. The design needs few devices, does not occupy too much PCB space, can trigger a short-circuit protection mechanism rapidly, and protects the SiC MOSFET from being damaged.
The SiC MOSFET driving circuit based on the over-current protection of the pure hardware device comprises a control module, a PWM output buffer circuit, a driving circuit and an over-current and short-circuit protection circuit, wherein the PWM output buffer circuit and the over-current and short-circuit protection circuit are connected with the control module, the outputs of the PWM output buffer circuit and the over-current and short-circuit protection circuit are connected with the input of the driving circuit, and the driving circuit and the over-current and short-circuit protection circuit are connected with the SiC MOSFET;
the PWM output buffer circuit comprises a transceiver, pins B2-B7 of the transceiver are connected with 6 paths of PWM signals DPWM 1-DPWM 6, an enabling pin OE of the transceiver is grounded, a direction control pin is grounded, and output pins A2-A7 of the transceiver are respectively connected to the driving circuit;
the driving circuit comprises two IGBT drivers, wherein a pin 1 and a pin 4 of the IGBT drivers are the positive electrode of a power supply on a signal input side and a corresponding grounding end, a pin 2 and a pin 3 are the same-direction input of the drivers and the reverse input of the drivers respectively, a pin 3 is an enabling pin, a pin 5 and a pin 8 are the ground end and the positive end of an isolation power supply respectively, a pin 6 is an active miller clamp pin, a grid electrode of an SiC MOSFET is connected, and a pin 7 is a driving signal output;
the overcurrent and short-circuit protection circuit comprises a power amplifier, wherein the positive electrode input end of the power amplifier is connected with the source electrode of the SiC MOSFET, the output end of the power amplifier is connected with the first optical coupler U5 and the second optical coupler U6, and the positive electrode input end and the DC_BUS-end of the power amplifier are directly connected with a sampling resistor R9.
Preferably, the control module adopts a DSP control chip with the model of TMS320F2812, the model of the transceiver is 74LVC4245APW, and the model of the IGBT driver is 1EDC20I12MH.
Preferably, all the 6 paths of PWM signals DPWM 1-DPWM 6 connected with pins B2-B7 of the transceiver are provided with pull-down resistors, and the resistance values of the pull-down resistors are all 2kΩ.
Preferably, the output ends of the two IGBT drivers are respectively connected to a first gate driving resistor R7 and a second gate driving resistor R8, and the resistances of the first gate driving resistor R7 and the second gate driving resistor R8 are both 10Ω.
Preferably, the resistance value of the sampling resistor R9 is 3mΩ.
The invention has the advantages that: the current is detected by connecting a resistor in series with the source electrode of the SiC MOSFET, a current signal is converted into a voltage signal, the voltage signal is compared with a preset value by using an LM211 comparator, the comparison signal is output through optical coupling isolation, then the comparison signal is directly connected to the enabling end of the SiC MOSFET driving chip, the SiC MOSFET driving chip is directly protected, and meanwhile, the other optical coupling isolation output is connected to a hardware protection interrupt pin of the main control module for double protection. The design needs few devices, does not occupy too much PCB space, can trigger a short-circuit protection mechanism rapidly, and protects the SiC MOSFET from being damaged.
Drawings
FIG. 1 is a schematic circuit diagram of the device of the present invention;
FIG. 2 is a schematic diagram of a PWM output buffer circuit in the apparatus of the present invention;
FIG. 3 is a schematic diagram of a driving circuit in the device of the present invention;
FIG. 4 is a schematic diagram of an over-current and short-circuit protection circuit in the device of the present invention;
FIG. 5 is a schematic diagram of a circuit connection of the present invention;
Detailed Description
The invention is further described in connection with the following detailed description, in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.
As shown in fig. 1 to 5, the SiC MOSFET overcurrent protection circuit based on a pure hardware device mainly includes a control module circuit, a driving circuit, and an overcurrent protection circuit. During normal operation, a pulse signal required for driving the SiC MOSFET device is sent to an eight-path dual-power conversion transceiver 74LVC4245APW by a controller and then is output to an IN+ pin of a 1EDC20I12MH of the SiC MOSFET driving chip, when the IN-pin of the 1EDC20I12MH is low, a waveform IN phase with the signal output pin OUT of the 1EDC20I12MH is output, and then the SiC MOSFET device is driven, at the moment, the current on a current detection resistor is smaller, the partial pressure is smaller than a preset value, an LM211 outputs a low level, a high-level signal PDPINT is obtained through an optical coupler TLP621, and the signal is connected to a fault pin PDPINT of a control chip TMS320F2812, and the PDPINT pin is low-level effective, so that the TMS320F2812 can normally output PWM signals, the low-level signal TLP621 is obtained through another optical coupler TLP 211, the IN-pin of the 1EDC20I12MH is connected to the IN-pin of the 1EDC20I12MH, at the moment, and the 1EDC20I12MH can normally work; when the SiC MOSFET device is subjected to overcurrent or short circuit, the voltage division of the current detection resistor is increased, when the voltage division of the resistor is larger than a preset value, the LM211 output level is overturned, the PDPINT and IN_N levels are overturned, the IN_N level is high, the 1EDC20I12MH is locked, the OUT pin outputs a low level, meanwhile, the PDPINT level of the fault pin of TMS320F2812 is changed into the low level, the PWM output of the TMS320F2812 is also locked, and double protection is carried OUT, so that the SiC MOSFET is not damaged.
The control module and the PWM output buffer circuit are based on the following principle: the control module generally refers to a DSP, an FPGA or a combined unit of the DSP and the FPGA, and is mainly used for sending PWM pulse signals, signal buffer circuits and fault signal feedback. According to the invention, a DSP is selected as a control module, and 6 paths of PWM signals DPWM 1-DPWM 6 output by the DSP are respectively connected to pins B2-B7 of a transceiver 74LVC4245APW, and a pull-down resistor is required to be added to the PWM signals, so that the phenomenon that the PWM signals are unstable at the moment of power-on, and the SiC MOSFET is turned on by mistake is prevented; the enable pin OE of the 74LVC4245APW is grounded, the direction control pin is grounded, so that the signal transmission direction is B to A, the 74LVC4245APW works normally, and the output pins A2 to A7 of the signal transmission direction are respectively connected to the IN+ pins of the corresponding 1EDC20I12MH. The circuit diagram is shown in fig. 2.
The 1EDC20I12MH adopted by the driving circuit is a clamped single-channel isolation type IGBT gate driver designed by Infineon corporation, typical peak current is up to 6A when rail-to-rail output is achieved, and the driving circuit is internally integrated with an active Miller clamping circuit and is suitable for running in high-ambient temperature and rapid switching application. The peripheral circuit has simple structure, fewer devices and very convenient wiring.
The input and output of the 1EDC20I12MH driver is electrically isolated, and is powered by a dual power supply, and pins 1 and 4 are the positive ends of the power supply on the signal input side and correspondingly connected with a +5V power supply; 2. the pin 3 is the same-direction input of the driver and the reverse input of the driver respectively, the pin 3 can also be used as an enabling pin of the pin 1EDC20I12MH, when the pin 3 inputs high level, the output of the pin 1EDC20I12MH is locked, and low level is output, otherwise, the pin 1EDC20I12MH can output signals with the same phase as the pin 2; 5. the No. 6 pin is the ground and positive end of the isolation power supply respectively, which is connected with +15V and ground of the isolation power supply, the No. 7 pin is the driving signal output, and the SiC MOSFET device is directly driven by the grid driving resistor; the No. 8 pin is an active Miller clamp pin and is connected with the grid electrode of the SiC MOSFET, and once the grid electrode voltage is reduced to below 2V based on the No. 6 pin during the turn-off period, the Miller clamp function connects the output of the active Miller clamp pin to the No. 6 pin so as to avoid parasitic conduction of the connected SiC MOSFET.
The 1EDC20I12MH of the reference driving chip uses a manual, the gate driving resistor is 10 omega, the power of the gate resistor is determined by the power of the SiC MOSFET gate driving, and generally, the total power of the gate driving resistor is at least 2 times of the gate driving power. IGBT gate drive power p= FUQ, where F is the operating frequency of the SiC MOSFET, U is the peak-to-peak value of the drive output voltage, Q is the gate charge, and reference is made to the SiC MOSFET module parameter handbook. In the invention, the SiC MOSFET is IMZ120R060M1H of Infineon company, the driving chip uses 1EDC20I12MH of Infineon company, the starting voltage is 15V, the closing voltage is 0V, so U=15V, the working frequency is 6.4KHz, Q=31nC, P=3mW can be calculated, and a resistor of 10 omega/0.25W is selected. The circuit is shown in fig. 3.
With respect to the protection circuit, the preset protection current threshold value 42.5A (peak value of the 30A alternating current circuit) is obtained by selecting a sampling resistor of 3mR, calculating the available voltage threshold value to be 0.127V, and selecting a 5V power supply to obtain the protection circuit through 38.3k and 1k resistor voltage division.
When the SiC MOSFET device works normally, the partial pressure at two ends of the sampling resistor R9 is smaller, the voltage of V2 is smaller than the voltage of V3, the OC_Fault outputs a low level, the IN_ N, PDPINT outputs a low level and a high level respectively through the U5 and U6 optocouplers, at the moment, the driving chip 1EDC20I12MH and TMS320F2812 work normally, the PWM output is normal, and the SiC MOSFET device is also normally turned on and off; when abnormal conditions such as overcurrent and short circuit occur, the voltage division at two ends of the sampling resistor R9 becomes larger, the V2 voltage is larger than the V3 voltage, the OC_Fault outputs a high level, the IN_ N, PDPINT level is turned over, the IN_N signal is connected with the IN-pin of the 1EDC20I12MH, when the IN-pin level is high, the IN+ pin inputs any level, the 1EDC20I12MH outputs a low level, the rear-stage SiC MOSFET device is turned off, meanwhile, the PDPINT level becomes low level, and all event manager output pins of the TMS320F2812 are set to be IN a high resistance state, and because PWM signals are connected with pull-down resistors, the PWM signals are all IN a low level and are doubly protected, so that when overcurrent short circuit faults occur, the SiC MOSFET device and the time are effectively turned off. The circuit diagram is shown in fig. 4.
Specific embodiments and principles:
during normal operation, a pulse signal required for driving the SiC MOSFET device is sent to an eight-path dual-power conversion transceiver 74LVC4245APW by a controller and then is output to an IN+ pin of a 1EDC20I12MH of the SiC MOSFET driving chip, when the IN-pin of the 1EDC20I12MH is low, a waveform IN phase with the signal output pin OUT of the 1EDC20I12MH is output, and then the SiC MOSFET device is driven, at the moment, the current on a current detection resistor is smaller, the partial pressure is smaller than a preset value, an LM211 outputs a low level, a high-level signal PDPINT is obtained through an optical coupler TLP621, and the signal is connected to a fault pin PDPINT of a control chip TMS320F2812, and the PDPINT pin is low-level effective, so that the TMS320F2812 can normally output PWM signals, the low-level signal TLP621 is obtained through another optical coupler TLP 211, the IN-pin of the 1EDC20I12MH is connected to the IN-pin of the 1EDC20I12MH, at the moment, and the 1EDC20I12MH can normally work; when the SiC MOSFET device is subjected to overcurrent or short circuit, the voltage division of the current detection resistor is increased, when the voltage division of the resistor is larger than a preset value, the LM211 output level is overturned, the PDPINT and IN_N levels are overturned, the IN_N level is high, the 1EDC20I12MH is locked, the OUT pin outputs a low level, meanwhile, the PDPINT level of the fault pin of TMS320F2812 is changed into the low level, the PWM output of the TMS320F2812 is also locked, and double protection is carried OUT, so that the SiC MOSFET is not damaged.
Based on the above, the invention detects the current by connecting the resistor in series with the source electrode of the SiC MOSFET, converts the current signal into the voltage signal, compares the voltage signal with the preset value by using the LM211 comparator, outputs the comparison signal through the optical coupling isolation, directly accesses the enabling end of the SiC MOSFET driving chip, directly protects the SiC MOSFET driving chip side, and simultaneously uses the other optical coupling isolation output to access the hardware protection interrupt pin of the main control module for double protection. The design needs few devices, does not occupy too much PCB space, can trigger a short-circuit protection mechanism rapidly, and protects the SiC MOSFET from being damaged.
It will be appreciated by those skilled in the art that the present invention can be carried out in other embodiments without departing from the spirit or essential characteristics thereof. Accordingly, the above disclosed embodiments are illustrative in all respects, and not exclusive. All changes that come within the scope of the invention or equivalents thereto are intended to be embraced therein.
Claims (5)
1. The SiC MOSFET driving circuit is characterized by comprising a control module, a PWM output buffer circuit, a driving circuit and an overcurrent and short-circuit protection circuit, wherein the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the control module, the outputs of the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the input of the driving circuit, and the driving circuit and the overcurrent and short-circuit protection circuit are connected with the SiC MOSFET;
the PWM output buffer circuit comprises a transceiver, pins B2-B7 of the transceiver are connected with 6 paths of PWM signals DPWM 1-DPWM 6, an enabling pin OE of the transceiver is grounded, a direction control pin is grounded, and output pins A2-A7 of the transceiver are respectively connected to the driving circuit;
the driving circuit comprises two IGBT drivers, wherein a pin 1 and a pin 4 of the IGBT drivers are the positive electrode of a power supply on a signal input side and a corresponding grounding end, a pin 2 and a pin 3 are the same-direction input of the drivers and the reverse input of the drivers respectively, a pin 3 is an enabling pin, a pin 5 and a pin 8 are the ground end and the positive end of an isolation power supply respectively, a pin 6 is an active miller clamp pin, a grid electrode of an SiC MOSFET is connected, and a pin 7 is a driving signal output;
the semiconductor device further comprises two SiC MOSFETs, a first IGBT driver U2 is connected with the grid electrode of the first SiC MOSFETs, a second IGBT driver U3 is connected with the grid electrode of the second SiC MOSFETs, and the source electrode of the first SiC MOSFETs is connected with the drain electrode of the second SiC MOSFETs;
the over-current and short-circuit protection circuit comprises a power amplifier and a comparator, wherein the positive input of the power amplifier is connected with the source electrode of the SiC MOSFET, the output of the power amplifier is connected with a first optical coupler U5 and a second optical coupler U6, the positive input end and the DC_BUS-end of the power amplifier are directly connected with a sampling resistor R9, the positive input of the comparator is connected with the source stage of the second SiC MOSFET, the output of the comparator is connected with the input of the first optical coupler U5 and the second optical coupler U6, the pin 4 of the first optical coupler U5 is connected with the pin 3 of the first IGBT driver and the second IGBT driver, and the pin 3 of the second optical coupler U6 is connected with the fault pin PDPINT of the control module.
2. The SiC MOSFET driving circuit based on pure hardware device overcurrent protection of claim 1, wherein: the control module adopts a DSP control chip with the model of TMS320F2812, the model of the transceiver is 74LVC4245APW, and the model of the IGBT driver is 1EDC20I12MH.
3. The SiC MOSFET driving circuit based on pure hardware device overcurrent protection of claim 1, wherein: and the 6 paths of PWM signals DPWM 1-DPWM 6 connected with pins B2-B7 of the transceiver are respectively provided with a pull-down resistor, and the resistance values of the pull-down resistors are all 2kΩ.
4. The SiC MOSFET driving circuit based on pure hardware device overcurrent protection of claim 1, wherein: the output ends of the two IGBT drivers are respectively connected with a first grid driving resistor R7 and a second grid driving resistor R8, and the resistance values of the first grid driving resistor R7 and the second grid driving resistor R8 are 10 omega.
5. The SiC MOSFET driving circuit based on pure hardware device overcurrent protection of claim 1, wherein: the resistance value of the sampling resistor R9 is 3MΩ.
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