CN113839653A - SiC MOSFET drive circuit based on pure hardware device overcurrent protection - Google Patents
SiC MOSFET drive circuit based on pure hardware device overcurrent protection Download PDFInfo
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- CN113839653A CN113839653A CN202111153240.1A CN202111153240A CN113839653A CN 113839653 A CN113839653 A CN 113839653A CN 202111153240 A CN202111153240 A CN 202111153240A CN 113839653 A CN113839653 A CN 113839653A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a SiC MOSFET drive circuit based on pure hardware device overcurrent protection, which relates to the field of protection circuits and comprises a control module, a PWM output buffer circuit, a drive circuit and an overcurrent and short-circuit protection circuit, wherein the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the control module, the outputs of the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the input of the drive circuit, the drive circuit and the overcurrent and short-circuit protection circuit are connected with the SiC MOSFET, the current is detected by serially connecting a resistor at the source electrode of the SiC MOSFET, the current signal is converted into a voltage signal, an LM211 comparator is used for comparing with a preset value, a comparison signal is directly connected to an enabling end of the SiC MOSFET drive chip after being subjected to optical coupling isolation output, the protection is directly carried out at the side of the SiC MOSFET drive chip, and simultaneously, the other optical coupling isolation output is connected to a hardware protection interrupt pin of the module, and (4) double protection.
Description
Technical Field
The invention relates to the field of protection circuits, in particular to a SiC MOSFET (metal oxide semiconductor field effect transistor) driving circuit based on overcurrent protection of pure hardware devices.
Background
Compared with the traditional Si MOSFET, the SiC MOSFET has smaller on-resistance and lower switching loss, is suitable for higher working frequency, greatly improves the high-temperature stability due to the high-temperature working characteristic, and can be used in the application occasions of high pressure, high temperature, high efficiency and high power density which can not be related to the traditional Si MOSFET.
However, the SiC MOSFET is more expensive than the conventional Si MOSFET, and the SiC MOSFET has high performance and also has high cost, and during the actual use, there are often cases where the SiC MOSFET is damaged due to over-current short circuit and other faults caused by untimely control, external interference, and the like.
Disclosure of Invention
The invention aims to provide a SiC MOSFET drive circuit based on pure hardware device overcurrent protection, which is characterized in that a resistor is connected in series with a source electrode of a SiC MOSFET to detect current, a current signal is converted into a voltage signal, an LM211 comparator is used for comparing the voltage signal with a preset value, a comparison signal is directly connected to an enabling end of a SiC MOSFET drive chip after being subjected to optical coupling isolation output, the SiC MOSFET drive chip is directly protected, and meanwhile, the other optical coupling isolation output is connected to a hardware protection interrupt pin of a main control module for double protection. The design needs few devices, does not need to occupy too large PCB space, and can quickly trigger a short-circuit protection mechanism to protect the SiC MOSFET from being damaged.
A SiC MOSFET drive circuit based on pure hardware device overcurrent protection comprises a control module, a PWM output buffer circuit, a drive circuit and an overcurrent and short-circuit protection circuit, wherein the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the control module, the outputs of the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the input of the drive circuit, and the drive circuit and the overcurrent and short-circuit protection circuit are connected with a SiC MOSFET;
the PWM output buffer circuit comprises a transceiver, pins B2-B7 of the transceiver are connected with 6 paths of PWM signals DPWM 1-DPWM 6, an enable pin OE of the transceiver is grounded, a direction control pin is grounded, and output pins A2-A7 of the transceiver are respectively connected to a driving circuit;
the driving circuit comprises two IGBT drivers, wherein a No. 1 pin and a No. 4 pin of each IGBT driver are a positive electrode of a signal input side power supply and a corresponding grounding end, a No. 2 pin and a No. 3 pin are respectively a driver homodromous input and a driver reverse input, a No. 3 pin is an enabling pin, a No. 5 pin and a No. 8 pin are respectively a grounding end and a positive end of an isolation power supply, a No. 6 pin is an active Miller clamping pin and is connected with a grid electrode of an SiC MOSFET, and a No. 7 pin is used for outputting a driving signal;
the over-current and short-circuit protection circuit comprises a power amplifier, the anode input of the power amplifier is connected with the source electrode of the SiC MOSFET, the output of the power amplifier is connected with a first optical coupler U5 and a second optical coupler U6, and the anode input end and the DC _ BUS-end of the power amplifier are directly connected with a sampling resistor R9.
Preferably, the control module adopts a DSP control chip with the model number of TMS320F2812, the model number of the transceiver is 74LVC4245APW, and the model number of the IGBT driver is 1EDC20I12 MH.
Preferably, the 6 paths of PWM signals DPWM1 and DPWM6 connected to the B2-B7 pins of the transceiver are all provided with pull-down resistors, and the resistance values of the pull-down resistors are all 2k Ω.
Preferably, the output ends of the two IGBT drivers are respectively connected with a first gate driving resistor R7 and a second gate driving resistor R8, and the resistances of the first gate driving resistor R7 and the second gate driving resistor R8 are both 10 Ω.
Preferably, the resistance value of the sampling resistor R9 is 3M Ω.
The invention has the advantages that: the source electrode of the SiC MOSFET is connected with the resistor in series to detect current, a current signal is converted into a voltage signal, the LM211 comparator is used for comparing with a preset value, a comparison signal is directly connected to an enabling end of the SiC MOSFET driving chip after being isolated and output through the optical coupler, protection is directly carried out on the side of the SiC MOSFET driving chip, and meanwhile, another optical coupler is used for isolating and outputting a hardware protection interrupt pin connected to the main control module, so that dual protection is realized. The design needs few devices, does not need to occupy too large PCB space, and can quickly trigger a short-circuit protection mechanism to protect the SiC MOSFET from being damaged.
Drawings
FIG. 1 is a schematic circuit diagram of the apparatus of the present invention;
FIG. 2 is a schematic diagram of a PWM output buffer circuit of the apparatus of the present invention;
FIG. 3 is a schematic diagram of a driving circuit of the apparatus of the present invention;
FIG. 4 is a schematic diagram of an over-current and short-circuit protection circuit in the apparatus of the present invention;
FIG. 5 is a schematic diagram of the circuit connection of the present invention;
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1 to 5, the SiC MOSFET overcurrent protection circuit based on pure hardware devices mainly includes a control module circuit, a driving circuit, and an overcurrent protection circuit. When the driver works normally, a pulse signal required by driving the SiC MOSFET device is sent to the eight-path double-power-supply conversion transceiver 74LVC4245APW by the controller and then is output to an IN + pin of an EDC20I12MH of the SiC MOSFET driving chip 1, when the IN-pin of 1EDC20I12MH is low, the signal output pin OUT of 1EDC20I12MH outputs a waveform IN phase with it, thereby driving the SiC MOSFET device, the current on the current detection resistor is small, the divided voltage is less than the predetermined value, the LM211 outputs low level, a high-level signal PDPINT is obtained through an optocoupler TLP621, the signal is connected to a fault pin PDPINT of a control chip TMS320F2812, and the PDPINT pin is effective at a low level, so that the TMS320F2812 can normally output a PWM signal, a low-level signal IN _ N is obtained by the low-level signal output by the LM211 through another optocoupler TLP621 and is connected to an IN-pin of 1EDC20I12MH, at the moment, the IN-pin of 1EDC20I12MH is at a low level, and 1EDC20I12MH can normally work; when the SiC MOSFET device is IN overcurrent or short circuit, the current detection resistance partial voltage is increased, when the resistance partial voltage is larger than a preset value, the output level of the LM211 is inverted, the PDPINT and IN _ N levels are also inverted, the IN _ N level is high, the 1EDC20I12MH is locked, the OUT pin outputs low level, meanwhile, the PDPINT level of the fault pin of the TMS320F2812 is changed into low level, the PWM output of the TMS320F2812 is also locked, and double protection is achieved, so that the SiC MOSFET is not damaged.
The control module and the PWM output buffer circuit have the following principles: the control module generally refers to a DSP, an FPGA or a combined unit of the DSP and the FPGA and is mainly used for sending PWM pulse signals, signal buffer circuits and fault signal return. According to the invention, a DSP is selected as a control module, 6 paths of PWM signals DPWM 1-DPWM 6 output by the DSP are respectively connected to pins B2-B7 of APW of a transceiver 74LVC4245, a pull-down resistor is required to be added to the PWM signals, and the phenomenon that the PWM signals are unstable at the moment of power-on to cause false conduction of a SiC MOSFET is prevented; the enable pin OE of the 74LVC4245APW is grounded, the direction control pin is grounded, so that the signal transmission direction is B to A, the 74LVC4245APW normally works, and the output pins A2-A7 are respectively connected to the corresponding IN + pins of the 1EDC20I12 MH. The circuit diagram is shown in fig. 2.
The 1EDC20I12MH adopted by the driving circuit is a single-channel isolation type IGBT gate driver with a clamp, which is designed by Infineon company, the typical peak current is as high as 6A when the driving circuit is output from a rail to a rail, and an active Miller clamp circuit is integrated inside the driving circuit, so that the driving circuit is suitable for operating in high ambient temperature and fast switching application. The peripheral circuit has simple structure, few devices and convenient wiring.
The input and output of the 1EDC20I12MH driver are electrically isolated, and are powered by double power supplies, and pins 1 and 4 are the positive end of a power supply at the signal input side and correspondingly are connected with a +5V power supply; 2. pin 3 is driver's syntropy input and driver's inverting input respectively, pin 3 can also be regarded as the enable pin of 1EDC20I12MH, when pin 3 inputs the high level, 1EDC20I12MH outputs the lock, output the low level, otherwise 1EDC20I12MH can output the signal of the same phase with pin 2; 5. the No. 6 pin is respectively the ground and the positive end of the isolation power supply, is connected with the +15V of the isolation power supply and the ground, and the No. 7 pin is used for driving signal output and directly drives the SiC MOSFET device through a gate driving resistor; pin 8 is the active miller clamp pin, which is connected to the gate of the SiC MOSFET, and during turn-off, once the gate voltage drops below 2V referenced to pin 6, the miller clamp function connects its output to pin 6 to avoid parasitic turn-on of the connected SiC MOSFET.
Referring to the manual of 1EDC20I12MH of the driver chip, the gate driving resistor is selected to be 10 Ω, the power of the gate resistor is determined by the power of the gate driving of the SiC MOSFET, and generally, the total power of the gate driving resistor should be at least 2 times the gate driving power. The IGBT gate drive power P is FUQ, where F is the operating frequency of the SiC MOSFET, U is the peak-to-peak value of the drive output voltage, and Q is the gate charge, and reference is made to the SiC MOSFET module parameter manual. In the present invention, the SiC MOSFET used is IMZ120R060M1H manufactured by Infineon, and the driver chip uses 1EDC20I12MH manufactured by Infineon, with a start voltage of 15V and an off voltage of 0V, so that U is 15V, an operating frequency is 6.4KHz, Q is 31nC, P is 3mW, and a resistor of 10 Ω/0.25W is used. The circuit is shown in fig. 3.
Regarding the protection circuit, the predetermined protection current threshold value 42.5A (the peak value of a 30A alternating current circuit) is obtained by selecting a sampling resistor with the voltage of 3mR, calculating to obtain a voltage threshold value of 0.127V, and selecting a 5V power supply to obtain the protection current threshold value through 38.3k and 1k resistor voltage division.
When the SiC MOSFET device works normally, the partial voltage at two ends of the sampling resistor R9 is small, the voltage of V2 is smaller than the voltage of V3, OC _ Fault outputs low level, the low level and the high level are respectively output by the IN _ N, PDPINT through the U5 and U6 optical couplers, at the moment, the EDC20I12MH and the TMS320F2812 of the driving chip 1 work normally, the PWM output is normal, and the SiC MOSFET device is also switched on and off normally; when abnormal conditions such as overcurrent and short circuit occur, the partial voltage at two ends of the sampling resistor R9 is increased, the voltage of V2 is larger than the voltage of V3, OC _ Fault outputs high level, the level of IN _ N, PDPINT is inverted, an IN _ N signal is connected with an IN-pin of 1EDC20I12MH, the level of the IN-pin is high, an IN + pin inputs any level, 1EDC20I12MH outputs low level, a rear-stage SiC MOSFET device is turned off, meanwhile, the PDPINT level is changed into low level, all event manager output pins of the TMS320F2812 are set to be IN high-impedance state, and because PWM signals are connected with pull-down resistors, the PWM signals are all IN low level, double protection is achieved, and the SiC MOSFET device is effectively turned off IN time when overcurrent and short circuit faults occur. The circuit diagram is shown in fig. 4.
The specific implementation mode and principle are as follows:
when the driver works normally, a pulse signal required by driving the SiC MOSFET device is sent to the eight-path double-power-supply conversion transceiver 74LVC4245APW by the controller and then is output to an IN + pin of an EDC20I12MH of the SiC MOSFET driving chip 1, when the IN-pin of 1EDC20I12MH is low, the signal output pin OUT of 1EDC20I12MH outputs a waveform IN phase with it, thereby driving the SiC MOSFET device, the current on the current detection resistor is small, the divided voltage is less than the predetermined value, the LM211 outputs low level, a high-level signal PDPINT is obtained through an optocoupler TLP621, the signal is connected to a fault pin PDPINT of a control chip TMS320F2812, and the PDPINT pin is effective at a low level, so that the TMS320F2812 can normally output a PWM signal, a low-level signal IN _ N is obtained by the low-level signal output by the LM211 through another optocoupler TLP621 and is connected to an IN-pin of 1EDC20I12MH, at the moment, the IN-pin of 1EDC20I12MH is at a low level, and 1EDC20I12MH can normally work; when the SiC MOSFET device is IN overcurrent or short circuit, the current detection resistance partial voltage is increased, when the resistance partial voltage is larger than a preset value, the output level of the LM211 is inverted, the PDPINT and IN _ N levels are also inverted, the IN _ N level is high, the 1EDC20I12MH is locked, the OUT pin outputs low level, meanwhile, the PDPINT level of the fault pin of the TMS320F2812 is changed into low level, the PWM output of the TMS320F2812 is also locked, and double protection is achieved, so that the SiC MOSFET is not damaged.
Based on the above, the current is detected by serially connecting a resistor to the source of the SiC MOSFET, the current signal is converted into a voltage signal, the LM211 comparator is used for comparing with a predetermined value, the comparison signal is directly connected to the enable end of the SiC MOSFET driver chip after being isolated and output by the optical coupler, the protection is directly performed on the side of the SiC MOSFET driver chip, and the other optical coupler is used for isolating and outputting the hardware protection interrupt pin of the main control module, so that the dual protection is performed. The design needs few devices, does not need to occupy too large PCB space, and can quickly trigger a short-circuit protection mechanism to protect the SiC MOSFET from being damaged.
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.
Claims (5)
1. A SiC MOSFET drive circuit based on pure hardware device overcurrent protection is characterized by comprising a control module, a PWM output buffer circuit, a drive circuit and an overcurrent and short-circuit protection circuit, wherein the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the control module, the outputs of the PWM output buffer circuit and the overcurrent and short-circuit protection circuit are connected with the input of the drive circuit, and the drive circuit and the overcurrent and short-circuit protection circuit are connected with a SiC MOSFET;
the PWM output buffer circuit comprises a transceiver, pins B2-B7 of the transceiver are connected with 6 paths of PWM signals DPWM 1-DPWM 6, an enable pin OE of the transceiver is grounded, a direction control pin is grounded, and output pins A2-A7 of the transceiver are respectively connected to a driving circuit;
the driving circuit comprises two IGBT drivers, wherein a No. 1 pin and a No. 4 pin of each IGBT driver are a positive electrode of a signal input side power supply and a corresponding grounding end, a No. 2 pin and a No. 3 pin are respectively a driver homodromous input and a driver reverse input, a No. 3 pin is an enabling pin, a No. 5 pin and a No. 8 pin are respectively a grounding end and a positive end of an isolation power supply, a No. 6 pin is an active Miller clamping pin and is connected with a grid electrode of an SiC MOSFET, and a No. 7 pin is used for outputting a driving signal;
the over-current and short-circuit protection circuit comprises a power amplifier, the anode input of the power amplifier is connected with the source electrode of the SiC MOSFET, the output of the power amplifier is connected with a first optical coupler U5 and a second optical coupler U6, and the anode input end and the DC _ BUS-end of the power amplifier are directly connected with a sampling resistor R9.
2. The SiC MOSFET drive circuit based on pure hardware device overcurrent protection of claim 1, wherein: the control module adopts a DSP control chip with the model number of TMS320F2812, the model number of the transceiver is 74LVC4245APW, and the model number of the IGBT driver is 1EDC20I12 MH.
3. The SiC MOSFET drive circuit based on pure hardware device overcurrent protection of claim 1, wherein: the 6 paths of PWM signals DPWM 1-DPWM 6 connected with B2-B7 pins of the transceiver are provided with pull-down resistors, and the resistance values of the pull-down resistors are all 2k omega.
4. The SiC MOSFET drive circuit based on pure hardware device overcurrent protection of claim 1, wherein: the output ends of the two IGBT drivers are respectively connected with a first gate driving resistor R7 and a second gate driving resistor R8, and the resistance values of the first gate driving resistor R7 and the second gate driving resistor R8 are both 10 omega.
5. The SiC MOSFET drive circuit based on pure hardware device overcurrent protection of claim 1, wherein: the resistance value of the sampling resistor R9 is 3M omega.
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