CN109547001A - The current foldback circuit of insulated gate bipolar transistor - Google Patents
The current foldback circuit of insulated gate bipolar transistor Download PDFInfo
- Publication number
- CN109547001A CN109547001A CN201811612475.0A CN201811612475A CN109547001A CN 109547001 A CN109547001 A CN 109547001A CN 201811612475 A CN201811612475 A CN 201811612475A CN 109547001 A CN109547001 A CN 109547001A
- Authority
- CN
- China
- Prior art keywords
- insulated gate
- gate bipolar
- bipolar transistor
- current
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 8
- 230000003321 amplification Effects 0.000 claims description 7
- 239000000872 buffer Substances 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 6
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 description 5
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 description 5
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
The embodiment of the present application discloses a kind of current foldback circuit of insulated gate bipolar transistor.In the protection circuit, the input terminal of overcurrent comparing unit and the output end of insulated gate bipolar transistor are connected, and the output end of overcurrent comparing unit is connect by isolated location with the first input end of the first driving unit；The output end of first driving unit is connected by the grid of the second driving unit and insulated gate bipolar transistor；Overcurrent comparing unit acquires the current value of the output end of insulated gate bipolar transistor, and output comparison signal is generated when judging to occur over-current phenomenon avoidance according to current value；Isolated location exports predeterminated voltage signal to the first driving unit according to output comparison signal, generates the driving signal for being used for driving the second driving unit soft switching insulated gate bipolar transistor to trigger the first driving unit.The protection circuit carries out soft switching to insulated gate bipolar transistor when there is over-current phenomenon avoidance, improves the reliability of transistor, avoids the occurrence of excessive pressure damages.
Description
Technical field
This application involves field of circuit technology more particularly to a kind of current foldback circuits of insulated gate bipolar transistor.
Background technique
Currently, having used powerful IGBT (full name in English: Insulated Gate Bipolar some
Transistor, Chinese: insulated gate bipolar transistor) circuit in, can all be arranged protection circuit to there is overcurrent
Powerful IGBT is protected when phenomenon.
However, since powerful IGBT own switch characteristic is slower, thus there is over-current phenomenon avoidance, especially because of output
Caused by phase fault when over-current phenomenon avoidance, the electric current rate of climb is slower, and spent time is longer, and such switching characteristic can to protect
Protection circuit is by directly blocking front end PWM (full name in English: Pulse Width Modulation, Chinese: pulse width tune
System) driving signal turns off IGBT firmly.This hard shutdown to IGBT can generate very big voltage stress, not only shadow
The reliability for ringing IGBT, can also greatly reduce the stress allowance of IGBT, will cause IGBT excessive pressure damages when serious.
Summary of the invention
This application provides a kind of current foldback circuits of insulated gate bipolar transistor, to realize occurring over-current phenomenon avoidance
When to powerful insulated gate bipolar transistor carry out soft switching, improve the reliability of insulated gate bipolar transistor, effectively
Avoid the problem that excessive pressure damages occurs in insulated gate bipolar transistor.
This application provides a kind of current foldback circuits of insulated gate bipolar transistor comprising: the first driving unit,
Second driving unit, isolated location and overcurrent comparing unit；The input terminal and insulated gate bipolar of the overcurrent comparing unit are brilliant
The output end of body pipe connects, and the output end of the overcurrent comparing unit passes through the isolated location and first driving unit
First input end connection；The output end of first driving unit passes through second driving unit and the insulated gate bipolar
The grid of transistor connects；
Wherein, the overcurrent comparing unit acquires the current value of the output end of the insulated gate bipolar transistor, and
Output comparison signal is generated when judging to occur over-current phenomenon avoidance according to the current value；The isolated location is according to the output ratio
Predeterminated voltage signal is exported to first driving unit compared with signal, is generated with triggering first driving unit for driving
State the driving signal that the second driving unit carries out insulated gate bipolar transistor described in soft switching.
In a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application, the isolated location includes
Isolating device and current-limiting resistance；The isolating device is connected to power supply by the current-limiting resistance；The isolating device is according to institute
Output comparison signal is stated to be connected to the first input end of first driving unit to obtain the predeterminated voltage with the power supply
Signal.
In a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application, the current-limiting resistance includes
First current-limiting resistance and the second current-limiting resistance；The first input end of the isolating device passes through first current-limiting resistance and first
Power supply connection, the second input terminal of the isolating device are connect with the overcurrent comparing unit；The first of the isolating device is defeated
Outlet is connect by second current-limiting resistance with second source, the second output terminal of the isolating device and first driving
The first input end of unit connects.
In a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application, the isolated location is also wrapped
Buffer is included, the second input terminal of the isolating device is connect by the buffer with the overcurrent comparing unit.
It further include that voltage detecting is protected in a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application
Protect unit；The first input end of first driving unit passes through the voltage detecting protection location and the insulated gate bipolar
The input terminal of transistor connects, and the input terminal of the insulated gate bipolar transistor is connect with DC bus；
Wherein, when the voltage detecting protection location detection insulated gate bipolar transistor is on or moves back saturation
The voltage value of input terminal, and the voltage value of the input terminal is transmitted to the first input end of first driving unit；Institute
It states when the first driving unit judges to occur short circuit phenomenon according to the voltage value of the input terminal and generates for driving described second
Driving unit carries out the driving signal of insulated gate bipolar transistor described in soft switching.
It further include power amplification list in a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application
Member, second driving unit are connect by the power amplification unit with the output end of first driving unit.
In a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application, the overcurrent comparing unit
Including comparing unit and current sensor；The comparing unit passes through the current sensor and the insulated gate bipolar crystal
The output end of pipe connects；
Wherein, the current sensor acquires the current value of the output end of the insulated gate bipolar transistor, and according to
The current value of the output end generates corresponding voltage value；The comparing unit is comparing the voltage value greater than predeterminated voltage
The output comparison signal is generated when threshold value.
In a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application, the isolating device includes
Photoelectrical coupler.
It further include digital processing list in a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application
Member and level conversion unit；The digital processing element passes through the level conversion unit and the second of first driving unit
Input terminal connection, the digital processing element pass through the level conversion unit to the first driving unit output pulse width
Modulated drive signal.
In a kind of current foldback circuit of insulated gate bipolar transistor provided by the present application, the overcurrent comparing unit
Output end connect with the digital processing element exporting the output comparison signal to the digital processing element.
The application provides a kind of current foldback circuit of insulated gate bipolar transistor.The protection circuit includes the first driving
Unit, the second driving unit, isolated location and overcurrent comparing unit；The overcurrent comparing unit acquires insulated gate bipolar transistor
Output end current value, and according to the current value judge occur over-current phenomenon avoidance when generate output comparison signal；The isolation
Unit exports predeterminated voltage signal to the first driving unit according to output comparison signal, is used for triggering the generation of the first driving unit
The second driving unit is driven to carry out the driving signal of soft switching insulated gate bipolar transistor.The protection circuit may be implemented
Soft switching is carried out to powerful insulated gate bipolar transistor when existing over-current phenomenon avoidance, that improves insulated gate bipolar transistor can
By property, effectively insulated gate bipolar transistor is avoided excessive pressure damages occur.
Detailed description of the invention
Technical solution in ord to more clearly illustrate embodiments of the present application, below will be to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is some embodiments of the present application, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of schematic diagram of the current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application；
Fig. 2 is a kind of application signal of current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application
Figure；
Fig. 3 is the part physical circuit of the current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application
Schematic diagram；
Fig. 4 is the electricity of isolated location in the current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application
Road schematic diagram；
Fig. 5 is another circuit diagram of isolated location in current foldback circuit provided by the embodiments of the present application；
Fig. 6 is a kind of another signal of the current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application
Figure；
Fig. 7 is that a kind of part of the current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application is specific
Circuit diagram；
Fig. 8 is a kind of another signal of the current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application
Figure；
Fig. 9 is that a kind of part of the current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application is specific
Circuit diagram.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description, it is clear that described embodiment is some embodiments of the present application, instead of all the embodiments.Based on this Shen
Please in embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall in the protection scope of this application.
It should be appreciated that ought use in this specification and in the appended claims, term " includes " and "comprising" instruction
The presence of described feature, entirety, element and/or component, but one or more of the other feature, entirety, element, group is not precluded
The presence or addition of part and/or its set.
It is also understood that mesh of the term used in this present specification merely for the sake of description specific embodiment
And be not intended to limit the application.As present specification and it is used in the attached claims, unless on
Other situations are hereafter clearly indicated, otherwise " one " of singular, "one" and "the" are intended to include plural form.
It will be further appreciated that the term "and/or" used in present specification and the appended claims is
Refer to any combination and all possible combinations of one or more of associated item listed, and including these combinations.
Referring to Fig. 1, Fig. 1 is a kind of current foldback circuit of insulated gate bipolar transistor provided by the embodiments of the present application
Schematic diagram.The insulated gate bipolar transistor 50 can be applied to electric machine controller, frequency converter, inverter of electric car etc.
In device.The current foldback circuit 100 of the insulated gate bipolar transistor includes the first driving unit 10, the second driving unit
20, isolated location 30 and overcurrent comparing unit 40.
As shown in Figure 1, the output end of the input terminal 40a of the overcurrent comparing unit 40 and insulated gate bipolar transistor 50
50a connection, the output end 40b of the overcurrent comparing unit 40 are first defeated by the isolated location 30 and first driving unit 10
Enter 10a is held to connect.The output end 10b of first driving unit 10 is brilliant by second driving unit 20 and the insulated gate bipolar
The grid of body pipe 50 connects.
The overcurrent comparing unit 40 acquires the current value of the output end 50a of insulated gate bipolar transistor 50, and in basis
Current value is judged to occur to generate output comparison signal when over-current phenomenon avoidance.The isolated location 30 is according to output comparison signal to first
Driving unit 10 export predeterminated voltage signal, with trigger the first driving unit 10 generate for drive second driving unit 20 into
The driving signal of row soft switching insulated gate bipolar transistor 50, to realize when over-current phenomenon avoidance occurs, to insulated gate bipolar
Transistor npn npn 50 implements soft switching, that is, divides step-decreasing voltage to turn off the insulated gate bipolar transistor 50, so that it is guaranteed that insulated gate is double
The reliability of bipolar transistor 50.For powerful insulated gate bipolar transistor 50, when occurring, output is alternate
Caused by short circuit when over-current phenomenon avoidance, insulated gate bipolar crystal can be greatly reduced using the current foldback circuit 100 of the application
Voltage stress when pipe 50 turns off, effectively avoids the problem that excessive pressure damages occurs in powerful insulated gate bipolar transistor 50,
The stability for improving powerful insulated gate bipolar transistor 50, postpones making for powerful insulated gate bipolar transistor 50
Use the service life.
It should be noted that is, the insulated gate bipolar is brilliant when the insulated gate bipolar transistor 50 is to be used alone
Insulated gate bipolar transistor 50 when body pipe 50 is not used in series with other insulated gate bipolar transistors, in the application
Output end 50a be insulated gate bipolar transistor 50 emitter, the input terminal 50b of the insulated gate bipolar transistor 50
The as collector of insulated gate bipolar transistor 50.
However, when insulated gate bipolar transistor 50 is not used alone, for example, as shown in Fig. 2, Fig. 2 is that the application is real
A kind of application schematic diagram of the current foldback circuit of insulated gate bipolar transistor of example offer is provided.In inverter or frequency converter
In, it generally requires and uses to six insulated gate bipolar transistors 50, series connection forms three pairs of insulated gate bipolar transistors two-by-two
It is right.In each pair of insulated gate bipolar transistor pair, the emitter of an insulated gate bipolar transistor 50 and another insulation
The collector of grid bipolar junction transistor 50 connects to form bridge arm, and the output end of the bridge arm is the insulated gate bipolar in the application
The output end 50a of transistor, i.e. the output end 50a of insulated gate bipolar transistor are the output of U, V with mutually electricity every in W three-phase electricity
End.In each pair of insulated gate bipolar transistor pair, the collector and forward dc of an insulated gate bipolar transistor 50 are female
The emitter of line DC+ connection, another insulated gate bipolar transistor 50 is connect with negative sense DC bus DC-；With forward dc
The collector of bus DC+ connection or the insulated gate bipolar emitted in extremely the application connecting with negative sense DC bus DC- are brilliant
The input terminal 50b of body pipe.
In addition, a pair of of insulated gate bipolar transistor pair is only illustrated in Fig. 2, other insulated gate bipolar transistors
Pair connection type can refer to the connection type of Fig. 2.In inverter or frequency converter, due to each insulated gate bipolar transistor
Overcurrent protection is required, therefore by there are six the current foldback circuits of insulated gate bipolar transistor.And in general, it is each pair of exhausted
Edge grid bipolar junction transistor can share the same overcurrent comparing unit 40 to corresponding current foldback circuit.On as shown in Fig. 2,
Current foldback circuit 100a and lower current foldback circuit 100b share the same overcurrent comparing unit 40.
It is understood that the current foldback circuit in Fig. 1 is the upper current foldback circuit 100a in Fig. 2.In this Shen
Please be in specification, it will be by taking the corresponding current foldback circuit of an insulated gate bipolar transistor as an example, to illustrate overcurrent protection electricity
Connection relationship and overcurrent protection working principle in road between each unit.Those skilled in the art is combining Fig. 2 reading
After the related introduction of the corresponding current foldback circuit of an insulated gate bipolar transistor in present specification, even if insulation
Grid bipolar junction transistor needs to form bridge arm use, is also readily available corresponding circuit connecting relation.
In one embodiment, which receives the letter such as predeterminated voltage signal by its first input end 10a
Number, and carry out overcurrent, short circuit etc. according to signals such as predeterminated voltage signals and accordingly judge to generate corresponding driving signal to drive
Second driving unit 20 carries out soft switching to insulated gate bipolar transistor 50.First driving unit 10 is also second defeated by it
Enter to hold 10c to receive pulse width modulated driving signal, and insulated gate bipolar is controlled according to pulse width modulated driving signal
The on state and off-state of transistor 50.In order to realize the above functions, which may include A316J type
Number, the intelligent chips such as A331J model or A344JT model.
In one embodiment, as shown in figure 3, Fig. 3 is the mistake of insulated gate bipolar transistor provided by the embodiments of the present application
The part physical circuit schematic diagram of stream protection circuit.Second driving unit 20 includes first resistor 21, first capacitor 22 and the
One zener diode 23.The output end 10b of first driving unit 10 passes through first resistor 21 and insulated gate bipolar transistor
50 grid connection.One end of the first capacitor 22 and the first zener diode 23 is connected to insulated gate bipolar transistor 50
Grid, the other end of the first capacitor 22 and the first zener diode 23 is grounded.
In one embodiment, as shown in figure 4, Fig. 4 is the mistake of insulated gate bipolar transistor provided by the embodiments of the present application
The circuit diagram of isolated location in stream protection circuit.The isolated location 30 includes isolating device 31 and current-limiting resistance 32.It should be every
It is connected to power supply from device 31 by the current-limiting resistance 32.The output ratio that the isolating device 31 is generated according to overcurrent comparing unit 40
The first input end 10a of first driving unit 10 is connected to power supply to obtain predeterminated voltage signal compared with signal.
Specifically, as shown in figure 4, the current-limiting resistance 32 includes the first current-limiting resistance 321 and the second current-limiting resistance 322.It should
The first input end 31a of isolating device 31 is connect by first current-limiting resistance 321 with the first power supply VCC1, the isolating device 31
The second input terminal 31b connect with the output end 40b of the overcurrent comparing unit 40；First output end 31c of the isolating device 31
It is connect by second current-limiting resistance 322 with second source VCC2, the second output terminal 31d of the isolating device 31 and first drive
The first input end 10a connection of moving cell 10.
In one embodiment, the voltage value of the first power supply VCC1 and second source VCC2 is different.Specifically, first electricity
The voltage value of source VCC1 is less than the voltage value of second source VCC2.For example, the voltage value of first power supply VCC1 can be 3.3 volts
Or 5 volts, the voltage value of second source VCC2 can be 10 volts.Certainly, in other embodiments, the first power supply VCC1 and
The voltage value of two power supply VCC2 can also be identical, is not particularly limited herein.
In the embodiment shown in fig. 4, which is converted into high voltage for the output comparison signal of low-voltage
Predeterminated voltage signal.The corresponding voltage value of predeterminated voltage signal is greater than the preset voltage value in the first driving unit 10, in this way,
When the first input end 10a of the first driving unit 10 receives the predeterminated voltage signal, the first driving unit 10 will be judged
The corresponding voltage value of predeterminated voltage signal is greater than preset voltage value, at this point, the first driving unit 10 will generate driving signal with
Drive 20 soft switching insulated gate bipolar transistor 50 of the second driving unit.
For example, when intelligent chip of first driving unit 10 using A331J model, operating voltage is generally at 6.5 volts
To 7.5 volts, then it is 7 volts that preset voltage value, which can be set, meanwhile, by selecting the limit of suitable second source VCC2 and second
Leakage resistance 322 etc., so that the isolating device 31 can be made when the output comparison signal of low-voltage is input to isolated location 30
Second output terminal 31d export 8 volts of predeterminated voltage signal so that the first driving unit 10 may determine that the default electricity
Corresponding 8 volts of voltage value of signal are pressed to be greater than 7 volts of preset voltage value, thus the soft switching insulated gate bipolar transistor of triggering following
50 operation.
Further, in order to improve the driving capability of the output comparison signal, as shown in figure 5, Fig. 5 is the embodiment of the present application
Another circuit diagram of isolated location in the current foldback circuit of offer.The isolated location 30 further includes buffer 33.It should be every
The second input terminal 31b from device 31 is connect by the buffer 33 with the output end 40b of overcurrent comparing unit 40.
In one embodiment, which can be photoelectrical coupler, or other kind of coupler, herein not
Concrete restriction is done to the isolating device 31.
In one embodiment, as shown in Figure 1, the overcurrent comparing unit 40 includes comparing unit 41 and current sensor 42.
The comparing unit 41 is connect by the current sensor 42 with the output end 50a of insulated gate bipolar transistor 50.The electric current passes
Sensor 42 acquires the current value of the output end 50a of insulated gate bipolar transistor 50, and raw according to the current value of output end 50a
At corresponding voltage value.The comparing unit 41 generates output when comparing the voltage value greater than predetermined voltage threshold and compares letter
Number.
Specifically, when comparing unit 41 compares the voltage value received no more than predetermined voltage threshold, illustrate at this time
Do not occur over-current phenomenon avoidance, comparing unit 41 is by the output comparison signal of output HIGH voltage.Since output comparison signal at this time is
High voltage, therefore, isolated location 30 will not be triggered and generate predeterminated voltage signal, would not also make the first driving unit 10 raw
At for driving the driving signal of 20 soft switching insulated gate bipolar transistor 50 of the second driving unit.When comparing unit 41 compares
When the voltage value received out is greater than predetermined voltage threshold, illustrate occur over-current phenomenon avoidance at this time, wherein the over-current phenomenon avoidance includes defeated
Overcurrent caused by phase fault out.Comparing unit 41 will export the output comparison signal of low-voltage at this time, and then it is single to trigger isolation
Member 30 generates predeterminated voltage signal, so that the first driving unit 10 is generated for driving the insulation of 20 soft switching of the second driving unit
The driving signal of grid bipolar junction transistor 50.
In one embodiment, which can be hall device.For example, which can be for suddenly
That current sensor.
In one embodiment, as shown in fig. 6, Fig. 6 is a kind of insulated gate bipolar transistor provided by the embodiments of the present application
Current foldback circuit another schematic diagram.The current foldback circuit 100 of the insulated gate bipolar transistor further includes voltage inspection
Survey protection location 60.The first input end 10a of first driving unit 10 passes through the voltage detecting protection location 60 and insulated gate
The input terminal 50b connection of bipolar junction transistor 50, the input terminal 50b and DC bus DC+ of the insulated gate bipolar transistor 50
Connection.
In the embodiment shown in fig. 6, the voltage detecting protection location 60 detection insulated gate bipolar transistor 50 is in
The voltage value V of input terminal 50b when being connected or move back saturationce, and by the voltage value V of input terminal 50bceIt is transmitted to the first driving list
The first input end 10a of member 10.In the first driving unit 10 according to the voltage value V of input terminal 50bceJudge that short circuit phenomenon occurs
The driving signal that Shi Shengcheng is used to that second driving unit 20 to be driven to carry out soft switching insulated gate bipolar transistor 50.In this way,
When short circuit phenomenon occurs for insulated gate bipolar transistor 50, step-decreasing voltage can also be divided to turn off this absolutely by the way of soft switching
It is double to improve insulated gate to reduce the voltage stress of insulated gate bipolar transistor 50 when off for edge grid bipolar junction transistor 50
The stability of bipolar transistor 50, the problem of avoiding the occurrence of excessive pressure damages.
Specifically, in one embodiment, which judges the voltage value V of input terminal 50bceWhether it is greater than pre-
If voltage value, if the voltage value V of input terminal 50bceGreater than preset voltage value, then illustrate short circuit phenomenon occur, at this time the first driving
Output drive signal is driven 20 soft switching insulated gate bipolar transistor 50 of the second driving unit by unit 10.
Specifically, in one embodiment, as shown in fig. 7, Fig. 7 is a kind of insulated gate bipolar provided by the embodiments of the present application
The part physical circuit schematic diagram of the current foldback circuit of transistor.The voltage detecting protection location 60 include the second capacitor 61,
Second zener diode 62, second resistance 63 and diode 64.The first input end 10a of first driving unit 10 is passed sequentially through
Second resistance 63 and diode 64 are connected to the input terminal 50b of insulated gate bipolar transistor 50.Second capacitor 61 and second
One end of zener diode 62 is connect with the first input end 10a of the first driving unit 10, second capacitor 61 and the second pressure stabilizing
The other end of diode 62 is grounded.
It should be noted that in the embodiment shown in fig. 6, there are two protection branches to insulated gate bipolar crystal
Pipe 50 carries out overcurrent protection.First overcurrent protection branch is by overcurrent comparing unit 40, isolated location 30, the first driving unit
10 and second driving unit 20 constitute, Article 2 overcurrent protection branch is by voltage detecting protection location 60, the first driving unit
10 and second driving unit 20 constitute.Whether over-current phenomenon avoidance or short circuit phenomenon can all generate biggish electric current.It is general next
It says, the current value of triggering Article 2 overcurrent protection branch is greater than the current value of first overcurrent protection branch of triggering.However, working as
When insulated gate bipolar transistor 50 is powerful insulated gate bipolar transistor, since its own switching characteristic is slower,
In some cases, when occurring exporting phase fault, current value rising is slower, may first reach first overcurrent protection branch of triggering
The current value on road and not up to trigger the current value of Article 2 overcurrent protection branch, at this point, above-mentioned this output phase fault draws
The over-current phenomenon avoidance risen will trigger first overcurrent protection branch and carry out soft switching to insulated gate bipolar transistor 50.And certain
In the case of, rise current value that is very fast and being more than Article 2 overcurrent protection branch when current value caused by exporting phase fault occurs
When, due to Article 2 overcurrent protection branch response speed than first overcurrent protection branch fast response time, it is this
Short circuit phenomenon will carry out soft switching to insulated gate bipolar transistor 50 by Article 2 overcurrent protection branch.
In one embodiment, as shown in figure 8, Fig. 8 is a kind of insulated gate bipolar transistor provided by the embodiments of the present application
Current foldback circuit another schematic diagram.The current foldback circuit 100 of the insulated gate bipolar transistor further includes that power is put
Big unit 70.Second driving unit 20 is connected by the output end 10b of the power amplification unit 70 and first driving unit 10
It connects.The driving signal that the power amplification unit 70 can export the first driving unit 10 amplifies processing, and will be after amplification
Driving signal export to the second driving unit 20.
Specifically, in one embodiment, as shown in figure 9, Fig. 9 is a kind of insulated gate bipolar provided by the embodiments of the present application
The specific schematic diagram of the partial circuit of the current foldback circuit of transistor.The power amplification unit 70 includes 3rd resistor 71, NPN type
Triode 72 and PNP type triode 73.The collector of the NPN type triode 72 connects power supply VCC3, the PNP type triode 73
The base stage of collector connection power supply VEE, the NPN type triode 72 and PNP type triode 73 links together and 3rd resistor 71
Connect and be connected to the output end 10b of the first driving unit 10.The emitter of the NPN type triode 72 and PNP type triode 73
It links together and is connect with the second driving unit 20.
In one embodiment, as shown in figure 8, the current foldback circuit 100 of the insulated gate bipolar transistor further includes number
Word processing unit 80 and level conversion unit 90.The digital processing element 80 passes through the level conversion unit 90 and first driving
Second input terminal 10c connection of unit 10.The digital processing element 80 is single to first driving by the level conversion unit 90
First 10 output pulse width modulated drive signals.
Specifically, which for example can be dsp chip.The digital processing element 80 is to level conversion list
The pulse width modulated driving signal of 90 3.3 volts of output of member.The level conversion unit 90 is used to modulate 3.3 volts of pulse width
Driving signal is converted into 5 volts of pulse width modulated driving signal, and 5 volts of pulse width modulated driving signal is exported to
One driving unit 10.First driving unit 10 is brilliant according to 5 volts of pulse width modulated driving signal control insulated gate bipolar
The working condition of body pipe 50.
In one embodiment, which can be real using eight road positive buffers of 74HCT244 model
It is existing.Certainly, in other embodiments, level conversion can also be realized by the combining form of the discrete devices such as triode, metal-oxide-semiconductor
Function, be not particularly limited herein.
In one embodiment, the output end 40b of the overcurrent comparing unit 40 can also be connect with the digital processing element 80.
In this way, the overcurrent comparing unit 40 can export output comparison signal to digital processing element 80.Certainly, the overcurrent is more single
Member 40 can not also be connect with the digital processing element 80.
In the present embodiment, the current foldback circuit 100 of the insulated gate bipolar transistor can be to insulated gate bipolar
Transistor 50 carries out overcurrent protection, for powerful insulated gate bipolar transistor 50, when powerful exhausted
When over-current phenomenon avoidance occurs for edge grid bipolar junction transistor 50, insulated gate bipolar transistor can be turned off by way of soft switching
50, the voltage stress generated when to reducing shutdown insulated gate bipolar transistor 50 improves powerful insulated gate bipolar
The reliability of transistor 50 effectively avoids the problem that excessive pressure damages occurs in powerful insulated gate bipolar transistor 50.
The above, the only specific embodiment of the application, but the protection scope of the application is not limited thereto, it is any
Those familiar with the art within the technical scope of the present application, can readily occur in various equivalent modifications or replace
It changes, these modifications or substitutions should all cover within the scope of protection of this application.Therefore, the protection scope of the application should be with right
It is required that protection scope subject to.
Claims (10)
1. a kind of current foldback circuit of insulated gate bipolar transistor characterized by comprising the first driving unit, second
Driving unit, isolated location and overcurrent comparing unit；The input terminal and insulated gate bipolar transistor of the overcurrent comparing unit
Output end connection, the output end of the overcurrent comparing unit pass through the isolated location and first driving unit first
Input terminal connection；The output end of first driving unit passes through second driving unit and the insulated gate bipolar crystal
The grid of pipe connects；
Wherein, the overcurrent comparing unit acquires the current value of the output end of the insulated gate bipolar transistor, and in basis
The current value is judged to occur to generate output comparison signal when over-current phenomenon avoidance；The isolated location compares letter according to the output
Number predeterminated voltage signal is exported to first driving unit, is generated with triggering first driving unit for driving described the
Two driving units carry out the driving signal of insulated gate bipolar transistor described in soft switching.
2. the current foldback circuit of insulated gate bipolar transistor according to claim 1, which is characterized in that the isolation
Unit includes isolating device and current-limiting resistance；The isolating device is connected to power supply by the current-limiting resistance；The isolator
The first input end of first driving unit is connected to described to obtain by part according to the output comparison signal with the power supply
Predeterminated voltage signal.
3. the current foldback circuit of insulated gate bipolar transistor according to claim 2, which is characterized in that the current limliting
Resistance includes the first current-limiting resistance and the second current-limiting resistance；The first input end of the isolating device passes through the first current limliting electricity
Resistance is connect with the first power supply, and the second input terminal of the isolating device is connect with the overcurrent comparing unit；The isolating device
The first output end connect with second source by second current-limiting resistance, the second output terminal of the isolating device with it is described
The first input end of first driving unit connects.
4. the current foldback circuit of insulated gate bipolar transistor according to claim 2, which is characterized in that the isolation
Unit further includes buffer, and the second input terminal of the isolating device is connected by the buffer and the overcurrent comparing unit
It connects.
5. the current foldback circuit of insulated gate bipolar transistor according to claim 1, which is characterized in that further include electricity
Pressure detection protection location；The first input end of first driving unit passes through the voltage detecting protection location and the insulation
The input terminal of grid bipolar junction transistor connects, and the input terminal of the insulated gate bipolar transistor is connect with DC bus；
Wherein, the voltage detecting protection location detects input when the insulated gate bipolar transistor is on or moves back saturation
The voltage value at end, and the voltage value of the input terminal is transmitted to the first input end of first driving unit；Described
It is generated when one driving unit judges to occur short circuit phenomenon according to the voltage value of the input terminal for driving second driving
Unit carries out the driving signal of insulated gate bipolar transistor described in soft switching.
6. the current foldback circuit of insulated gate bipolar transistor according to claim 1, which is characterized in that further include function
Rate amplifying unit, second driving unit are connected by the output end of the power amplification unit and first driving unit
It connects.
7. the current foldback circuit of insulated gate bipolar transistor according to claim 1, which is characterized in that the overcurrent
Comparing unit includes comparing unit and current sensor；The comparing unit is double by the current sensor and the insulated gate
The output end of bipolar transistor connects；
Wherein, the current sensor acquires the current value of the output end of the insulated gate bipolar transistor, and according to described
The current value of output end generates corresponding voltage value；The comparing unit is comparing the voltage value greater than predetermined voltage threshold
Comparison signal is exported described in Shi Shengcheng.
8. the current foldback circuit of insulated gate bipolar transistor according to claim 2, which is characterized in that the isolation
Device includes photoelectrical coupler.
9. the current foldback circuit of insulated gate bipolar transistor according to claim 1, which is characterized in that further include number
Word processing unit and level conversion unit；The digital processing element is single by the level conversion unit and first driving
The second input terminal connection of member, the digital processing element are exported by the level conversion unit to first driving unit
Pulse width modulated driving signal.
10. the current foldback circuit of insulated gate bipolar transistor according to claim 9, which is characterized in that the mistake
The output end of stream comparing unit is connect exporting the output comparison signal to the number with the digital processing element
Manage unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811612475.0A CN109547001A (en) | 2018-12-27 | 2018-12-27 | The current foldback circuit of insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811612475.0A CN109547001A (en) | 2018-12-27 | 2018-12-27 | The current foldback circuit of insulated gate bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109547001A true CN109547001A (en) | 2019-03-29 |
Family
ID=65857981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811612475.0A Withdrawn CN109547001A (en) | 2018-12-27 | 2018-12-27 | The current foldback circuit of insulated gate bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109547001A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111030053A (en) * | 2019-11-29 | 2020-04-17 | 苏州伟创电气科技股份有限公司 | Protection circuit and protection method of diode-clamped three-level converter |
| WO2022016549A1 (en) * | 2020-07-24 | 2022-01-27 | 深圳市大疆创新科技有限公司 | Power input protection device, control method and storage medium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290795A (en) * | 2011-08-30 | 2011-12-21 | 东莞市精诚电能设备有限公司 | IGBT (insulated gate bipolar translator) driver with good protection effect |
| CN202550515U (en) * | 2012-04-01 | 2012-11-21 | 上海市电力公司 | High-power IGBT (insulated gate bipolar transistor) comprehensive overcurrent protection circuit |
| CN203278624U (en) * | 2013-06-18 | 2013-11-06 | 欧瑞传动电气股份有限公司 | IGBT drive circuit with protection time-delay |
| CN204424877U (en) * | 2014-11-03 | 2015-06-24 | 浙江海得新能源有限公司 | A kind of IGBT module Over Current Protection System |
| US20160336936A1 (en) * | 2015-05-13 | 2016-11-17 | Infineon Technologies Austria Ag | Method and Circuit for Reducing Collector-Emitter Voltage Overshoot in an Insulated Gate Bipolar Transistor |
| CN209283196U (en) * | 2018-12-27 | 2019-08-20 | 深圳市英威腾电动汽车驱动技术有限公司 | The current foldback circuit of insulated gate bipolar transistor |
-
2018
- 2018-12-27 CN CN201811612475.0A patent/CN109547001A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290795A (en) * | 2011-08-30 | 2011-12-21 | 东莞市精诚电能设备有限公司 | IGBT (insulated gate bipolar translator) driver with good protection effect |
| CN202550515U (en) * | 2012-04-01 | 2012-11-21 | 上海市电力公司 | High-power IGBT (insulated gate bipolar transistor) comprehensive overcurrent protection circuit |
| CN203278624U (en) * | 2013-06-18 | 2013-11-06 | 欧瑞传动电气股份有限公司 | IGBT drive circuit with protection time-delay |
| CN204424877U (en) * | 2014-11-03 | 2015-06-24 | 浙江海得新能源有限公司 | A kind of IGBT module Over Current Protection System |
| US20160336936A1 (en) * | 2015-05-13 | 2016-11-17 | Infineon Technologies Austria Ag | Method and Circuit for Reducing Collector-Emitter Voltage Overshoot in an Insulated Gate Bipolar Transistor |
| CN209283196U (en) * | 2018-12-27 | 2019-08-20 | 深圳市英威腾电动汽车驱动技术有限公司 | The current foldback circuit of insulated gate bipolar transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111030053A (en) * | 2019-11-29 | 2020-04-17 | 苏州伟创电气科技股份有限公司 | Protection circuit and protection method of diode-clamped three-level converter |
| WO2022016549A1 (en) * | 2020-07-24 | 2022-01-27 | 深圳市大疆创新科技有限公司 | Power input protection device, control method and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103036214B (en) | Power switch series circuit and control method thereof | |
| US8044699B1 (en) | Differential high voltage level shifter | |
| US8537515B2 (en) | Driving circuit and semiconductor device with the driving circuit | |
| CN112838746A (en) | Gate driver with integrated miller clamp | |
| CN102280869B (en) | Switching device | |
| CN102315632B (en) | Driving circuit for inhibiting over current of IGBT (Insulated Gate Bipolar Transistor) | |
| CN111900969B (en) | Driving circuit of SiC-MOSFET | |
| CN111525786A (en) | Driving signal interlocking circuit with IGBT desaturation protection function | |
| CN209283196U (en) | The current foldback circuit of insulated gate bipolar transistor | |
| JP2009253484A (en) | Power conversion device | |
| CN109547001A (en) | The current foldback circuit of insulated gate bipolar transistor | |
| CN209282822U (en) | Control circuit and electronic equipment | |
| TWI459673B (en) | Power switch series circuit, control method thereof, and multilevel power conversion apparatus | |
| CN117318684B (en) | Shutdown circuit and electronic device | |
| CN112134256B (en) | Power conversion device | |
| JP2007312504A (en) | Power converter | |
| CN210201706U (en) | Inverter driving circuit for high-speed air compressor of fuel cell automobile | |
| CN108134510A (en) | Igbt drive circuit | |
| JP6590437B2 (en) | Semiconductor power converter | |
| CN103441656A (en) | IGBT driving circuit with undersaturated protection function | |
| KR100429079B1 (en) | gate drive for protecting IGBT | |
| CN209046518U (en) | High-power parallel connection power supply driving circuit based on IGBT | |
| US9692407B2 (en) | Circuit and method for detection of failure of the driver signal for parallel electronic switches | |
| KR20220028898A (en) | Short circuit protection for power switch | |
| JP2006014402A (en) | Overcurrent protector of power converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190329 |