CN111900969B - Driving circuit of SiC-MOSFET - Google Patents
Driving circuit of SiC-MOSFET Download PDFInfo
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- CN111900969B CN111900969B CN201910369797.5A CN201910369797A CN111900969B CN 111900969 B CN111900969 B CN 111900969B CN 201910369797 A CN201910369797 A CN 201910369797A CN 111900969 B CN111900969 B CN 111900969B
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- 238000002955 isolation Methods 0.000 claims abstract description 25
- 238000007493 shaping process Methods 0.000 claims description 14
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 claims description 13
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 claims description 13
- 230000003321 amplification Effects 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 230000000087 stabilizing effect Effects 0.000 claims description 4
- 230000007257 malfunction Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
Abstract
The invention discloses a drive circuit of a SiC-MOSFET, which comprises: the circuit comprises an isolation circuit, a current amplifying module, a logic module and a protection circuit; the input end of the isolation circuit is connected with an input signal and is used for carrying out signal isolation on the input signal; the output end of the logic module is respectively connected with the current amplifying module and the protection circuit and is used for carrying out logic control on the working states of the current amplifying module and the protection circuit; the input end of the current amplifying module is connected with the output end of the logic module, and the output end of the amplifying module is connected with the SiC-MOSFET and is used for amplifying and converting signals input through the logic circuit into driving currents meeting the requirements of the SiC-MOSFET; the protection circuit is connected with the SiC-MOSFET and is used for preventing the SiC-MOSFET from malfunction caused by high voltage pulse generated between the gate and the source of the SiC-MOSFET and the drain voltage of the SiC-MOSFET from being suddenly increased when the SiC-MOSFET is turned off so as to realize stable turn-off of the SiC-MOSFET.
Description
Technical Field
The invention relates to a driving circuit of a SiC-MOSFET, in particular to a driving circuit of a SiC-MOSFET.
Background
Silicon carbide SiC is favored because of its superior electrical properties such as wide forbidden band, high breakdown electric field, high saturation drift velocity, and high thermal conductivity, and is more suitable for operation under special conditions of high temperature, high power, and high frequency than other materials. The SiC-MOSTET generated according to the silicon carbide SiC is a unipolar voltage control type device, has the advantages of high switching speed, high voltage withstand level and good thermal stability, can stably work in severe environments such as high temperature, high radiation and the like, but the SiC-MOSFET power module has higher requirements on a driving circuit, has strict requirements on isolation performance, quick performance and driving capability of the driving circuit, has very low opening saturation voltage drop of the SiC-MOSFET, and the corresponding desaturation protection circuit needs to be more sensitive, needs to reduce protection voltage and needs to be faster, so that the driving circuit based on IGBT design cannot meet the driving requirement of the SiC-MOSFET, and needs to design a high-speed SiC-MOSFET driving circuit with good isolation capability and gate-source protection capability.
Disclosure of Invention
In order to solve the problem that a driving circuit based on IGBT design in the prior art cannot meet the driving requirement of an SiC-MOSFET, the invention provides the driving circuit of the SiC-MOSFET, which is easy to be interfered by the outside to generate misoperation because the threshold voltage of the grid electrode of the SiC-MOSFET is smaller, and in order to improve the working stability of the driving circuit, the SiC-MOSFET is required to be turned off by adopting negative voltage, and the driving circuit adopts isolated driving; in order to ensure the high speed of the SiC-MOSFET switch, the driving circuit can output a sufficiently large driving current, and the gate-source voltage does not exceed a threshold value to prevent the breakdown of a gate oxide layer, so the technical scheme provided by the invention comprises the following steps:
the circuit comprises an isolation circuit, a current amplifying module, a logic module and a protection circuit;
the input end of the isolation circuit is connected with an input signal, and the output end of the isolation circuit is connected with the input end of the logic module and is used for signal isolation;
the output end of the logic module is respectively connected with the current amplifying module and the protection circuit and is used for carrying out logic control on the working states of the current amplifying module and the protection circuit;
the input end of the current amplifying module is connected with the output end of the logic module, and the output end of the amplifying module is connected with the SiC-MOSFET and is used for amplifying and converting signals input through the logic circuit into driving currents meeting the requirements of the SiC-MOSFET;
the protection circuit is connected with the SiC-MOSFET and is used for preventing the SiC-MOSFET from malfunction caused by high voltage pulse generated between the gate and the source of the SiC-MOSFET and the drain voltage of the SiC-MOSFET from being suddenly increased when the SiC-MOSFET is turned off so as to realize stable turn-off of the SiC-MOSFET.
Preferably, the current amplifying module includes:
a current amplifying circuit and a totem-pole current amplifying circuit;
the current amplifying circuit is connected with the totem-pole current amplifying circuit in series and is used for carrying out primary amplification on an input signal;
the totem-pole current amplifying circuit is used for carrying out secondary amplification on the primary amplifying current and providing driving current meeting requirements for the SiC-MOSFET power module.
Preferably, the current amplifying circuit includes:
MOS tube Q1, MOS tube Q2 and 3 diodes;
the input signals are connected to the grids of the MOS transistor Q1 and the MOS transistor Q2;
the source electrode of the MOS tube Q1 is connected with the power supply VCC1 and the cathode of the diode D1;
the source electrode of the MOS tube Q2 is connected with the power supply VEE1 and the anodes of the diode D2 and the diode D3;
the drains of the MOS transistor Q1 and the MOS transistor Q2 are respectively connected with the anode of the diode D1, the cathode of the diode D2, the cathode of the diode D3 and the input end of the totem pole current amplifying circuit.
Preferably, the totem pole current amplifying circuit includes:
triode Q3, triode Q4, first base current-limiting resistor R1, second base current-limiting resistor R2, first voltage-stabilizing resistor R3, second voltage-stabilizing resistor R4, first grid current-limiting resistor R5 and second grid current-limiting resistor R6;
the base electrode of the triode Q3 is connected with the first base electrode current limiting resistor R1 in series;
the base electrode of the triode Q4 is connected with the second base electrode current limiting resistor R2 in series;
the first base current limiting resistor R1 and the second base current limiting resistor R2 are connected in parallel and then connected into a current amplifying circuit;
the collector electrode of the triode Q3 is connected with a power supply VCC1, and the base electrode and the emitter electrode of the triode Q3 are connected with a first voltage stabilizing resistor R3;
the collector electrode of the triode Q4 is connected with a power supply VEE1, and the base electrode and the emitter electrode of the triode Q4 are connected with a second voltage stabilizing resistor R4;
an emitter of the triode Q3 is connected with the first grid current limiting resistor R5 in series;
the emitter of the triode Q4 is connected with the second grid current limiting resistor R6 in series;
the first grid current limiting resistor R5 and the second grid current limiting resistor R6 are connected in parallel and then connected into the SiC-MOSFET.
Preferably, the protection circuit includes:
a miller clamp circuit and a desaturation protection circuit;
the miller clamp circuit is connected between the output end of the current amplifying module and the grid electrode of the SiC-MOSFET and is used for monitoring the voltage between the grid electrode and the source electrode of the SiC-MOSFET, and when the voltage between the grid electrode and the source electrode of the SiC-MOSFET is monitored to be greater than the grid electrode threshold value, the miller clamp circuit is activated to enable the SiC-MOSFET to be turned off stably;
the desaturation protection circuit is connected with the drain electrode of the SiC-MOSFET and used for monitoring the voltage of the drain electrode of the SiC-MOSFET, and when the voltage of the drain electrode of the SiC-MOSFET is greater than the drain electrode threshold value, the desaturation protection circuit is activated to enable the SiC-MOSFET to be turned off stably.
Preferably, the miller clamp circuit includes:
MOS tube Q6, comparator A1, MOS tube Q7, triode Q8, resistor R9 and resistor R10;
the drain electrode of the MOS tube Q6 is connected with one end of a resistor R8 and one input end of the comparator A1, the other input end of the comparator A1 is connected with a gate threshold value, the gate electrode of the MOS tube Q6 is connected with the output end of the logic module, and the source electrode of the MOS tube Q6 is connected with a power supply VEE 2;
the drain electrode of the MOS tube Q7 is sequentially connected with one end of a resistor R10 and one end of a resistor R9, the grid electrode of the MOS tube Q7 is connected with the output end of the comparator A1, and the source electrode of the MOS tube Q7 is connected with a power supply VEE 1;
the base electrode of the triode Q8 is connected between a resistor R9 and a resistor R10, and the collector electrode of the triode Q8 is connected with a power supply VEE 1;
the emitter of the triode Q8, the other end of the resistor R8 and the other end of the resistor R9 are connected between the output end of the current amplifying module and the grid electrode of the SiC-MOSFET.
Preferably, the desaturation protection circuit includes:
the device comprises a comparator A2, a zener diode ZD1, a capacitor C1, a resistor and a diode;
one input end of the comparator A2 is connected with the drain electrode of the SiC-MOSFET through a resistor R12, a diode D6 and a diode D7 in sequence, the other input end of the comparator A2 is connected with a drain electrode threshold value, and the output end of the comparator A2 is connected with a logic module;
the diode D5, the zener diode ZD1 and the capacitor C1 are connected in parallel and then connected between one input end of the comparator A2 and the resistor R12.
Preferably, the protection circuit further includes:
an undervoltage protection circuit;
the input end of the undervoltage protection circuit is connected with a power supply VCC1, the output end of the undervoltage protection circuit is connected with a logic module and used for monitoring the voltage of the VCC1, and when the voltage of the VCC1 is insufficient to provide stable driving capability, a fault signal is input to the logic module to prevent the driving circuit from working.
Preferably, the isolation circuit includes:
an optoelectronic transceiver and a voltage shaping circuit;
the input end of the photoelectric transceiver is connected with an input signal, the output end of the photoelectric transceiver is connected with the input end of the voltage shaping circuit, and the voltage shaping circuit is used for outputting stable rectangular level;
and the output end of the voltage shaping circuit is connected with the logic module.
Compared with the prior art, the invention has the beneficial effects that:
the driving circuit provided by the invention comprises an isolation circuit, a current amplifying module, a logic module and a protection circuit; the input end of the isolation circuit is connected with an input signal and is used for carrying out signal isolation on the input signal; the output end of the logic module is respectively connected with the current amplifying module and the protection circuit and is used for carrying out logic control on the working states of the current amplifying module and the protection circuit; the input end of the current amplifying module is connected with the output end of the logic module, and the output end of the amplifying module is connected with the SiC-MOSFET and is used for amplifying and converting signals input through the logic circuit into driving currents meeting the requirements of the SiC-MOSFET; the protection circuit is connected with the SiC-MOSFET and is used for preventing the SiC-MOSFET from misoperation caused by high voltage pulse generated between the gate and the source of the SiC-MOSFET and the drain voltage of the SiC-MOSFET from being suddenly increased when the SiC-MOSFET is turned off so as to realize stable turn-off of the SiC-MOSFET, and provides the SiC-MOSFET with a driving circuit which has gate-source protection capability and can stably obtain a driving signal under the high-frequency condition.
The technical scheme provided by the invention has the advantages of high speed, isolation and stability, the input signal is shaped into a control signal with excellent quality, a totem-pole current amplifying circuit is adopted, the driving current meeting the driving requirement can be output, the driving capability is strong, the driving time is short, the driving circuit has the functions of under-voltage protection, desaturation protection, miller clamping and the like, and the SiC-MOSFET power module is controlled stably and safely.
Drawings
FIG. 1 is a schematic diagram of a driving circuit of a SiC-MOSFET in the present invention;
FIG. 2 is a schematic diagram of a isolation circuit according to the present invention;
FIG. 3 is a schematic diagram of a current amplifying module according to the present invention;
FIG. 4 is a schematic diagram of a miller clamp circuit in a driving circuit according to the present invention;
FIG. 5 is a schematic diagram of a driving circuit of the present invention with a desaturation protection circuit added to the miller clamp circuit;
fig. 6 is a schematic diagram of the complete structure of the driving circuit of the present invention.
Detailed Description
For a better understanding of the present invention, reference is made to the following description, drawings and examples.
As shown in FIG. 1, the driving circuit of the SiC-MOSFET provided by the invention mainly comprises an isolation circuit, a logic module, a current amplifying module and a protection circuit. The input signal is connected with the input end of the high-speed isolation circuit for signal isolation, the output end of the high-speed isolation circuit is connected with the input end of the logic module, and the output end of the logic module is connected with the current amplifying module and the protection circuit and is used for carrying out logic control on the working states of the current amplifying module and the protection circuit; the output end of the current amplifying module is a SiC-MOSFET power module and is used for amplifying signals input through the logic circuit and converting the signals into driving currents meeting the requirements of the SiC-MOSFET; the protection circuit is connected with the SiC-MOSFET power module and is used for preventing the SiC-MOSFET malfunction and the drain voltage surge of the SiC-MOSFET during turn-off caused by high voltage pulse generated between the gate and the source of the SiC-MOSFET so as to realize the stable turn-off of the SiC-MOSFET.
The isolation circuit comprises an optoelectronic transceiver and a shaping circuit, wherein the optoelectronic transceiver can be an HFBR-1521 optical fiber transmitting and an HFBR-2521 optical fiber receiving, the shaping circuit can be a Schmitt trigger shaping circuit, and the voltage shaping circuit is used for outputting a stable rectangular level.
As shown in fig. 2, the principle is that the signal is formed by an HFBR-1521 optical fiber transmitting circuit, an HFBR-2521 optical fiber receiving circuit and a schmitt trigger shaping circuit, and the signal is subjected to electro-optical-electrical conversion and then is input to a logic module through the shaping circuit.
As shown in fig. 3, when the signal a is low and the signal B is high, Q1 and Q2 are both turned off, the point C is in a high impedance state, the later stage circuits are both turned off, Q5 is not turned on, when the signal a is high, the signal B is low, Q1 is turned on, Q2 is turned off, the point C is high, at this time, Q3 is kept on, Q4 is turned off, the current of the Q3 tube mainly flows from the collector to the emitter, at this time, the gate of the high-power SiC-MOSFET module Q5 is high, the junction capacitor is rapidly charged and turned on, the energy is provided by VCC1, and the driving capability is greatly enhanced. When the signal A is low level, the signal B is high level, the Q1 is cut off, the Q2 is conducted, the level at the point C is low level, at the moment, the Q3 is cut off, the Q4 is saturated and conducted, the current of the Q4 tube mainly flows from the emitter to the collector, and at the moment, the junction capacitor of the high-power SiC-MOSFET module Q5 is rapidly discharged.
In this current amplification module signal a and signal B may not be high at the same time.
There is a problem that is often encountered when SiC-MOSFET modules are switched, namely the creation of a miller plateau due to the parasitic miller capacitance being switched on. The miller effect is very pronounced during single power gate driving. A very high transient dv/dt is generated during the turn-off of the SiC-MOSFET, which causes the voltage between Vgs to rise and turn on, there is a potential turn-on, and to prevent this malfunction, the protection circuit has a miller clamp function, which is shown in fig. 4, the input signal and other set signals being passed through the gate of the LOGIC block control Q6. When the input signal is to turn off the SiC-MOSFET module, Q6 is turned off, if the gate voltage of Q5 is higher than the voltage VP, the comparator A1 outputs a high level to turn on Q7, at this time, the base of the triode Q8 is at a low level, Q8 is turned on, the gate voltage of Q5 is rapidly reduced, and thus the SiC-MOSFET is stably turned off.
The miller clamp circuit in this embodiment includes: MOS tube Q6, comparator A1, MOS tube Q7, triode Q8, resistor R9 and resistor R10;
the drain electrode of the MOS tube Q6 is connected between the output end of the current amplification module and the grid electrode of the SiC-MOSFET through a resistor R8, and the source electrode of the MOS tube Q6 is connected with a power supply VEE 2;
one input end of the comparator A1 is connected with the drain electrode of the MOS tube Q6, the other input end of the comparator A1 is connected with a gate threshold value, and the output end of the comparator A1 is connected with the gate electrode of the MOS tube Q7;
the drain electrode of the MOS tube Q7 is connected between the output end of the current amplification module and the grid electrode of the SiC-MOSFET through a resistor R9 and a resistor R10, and the source electrode of the MOS tube Q7 is connected with a power supply VEE 1;
the base electrode of the triode Q8 is connected between the resistor R9 and the resistor R10, the emitter electrode of the triode Q8 is connected between the output end of the current amplification module and the grid electrode of the SiC-MOSFET, and the collector electrode of the triode Q8 is connected with the power supply VEE 1.
In order to prevent the drain voltage of the SiC-MOSFET power module from increasing, a desaturation protection circuit is added to the protection circuit, and fig. 5 shows that the desaturation protection circuit is driven, and when the forward input voltage of the comparator A2 is greater than VD, the desaturation protection function is activated. When the desaturation protection is activated, the driving signal output is in a high resistance state, the Q6 drain voltage becomes low level, the soft shutdown process is started, then the level at the junction of R1 and R2 becomes low level, and the gate level of Q5 remains low level.
The desaturation protection circuit provided in this example includes: the device comprises a comparator A2, a zener diode ZD1, a capacitor C1, a resistor and a diode;
one input end of the comparator A2 is connected with the drain electrode of the SiC-MOSFET through a resistor R12, a diode D6 and a diode D7 in sequence, the other input end of the comparator A2 is connected with a drain electrode threshold value, and the output end of the comparator A2 is connected with a logic module;
one end of the diode D5, the zener diode ZD1 and the capacitor C1 which are connected in parallel is connected in series between one input end of the comparator A2 and the resistor R12, and the other end of the diode D is connected with the power supply VEE 2.
The driving circuit designed by the invention has the characteristics of high switching speed, strong driving capability, stable driving and the like, and as shown in fig. 6, when a signal A is in a high level and a signal B is in a low level, Q1 is switched on, Q2 is switched off, the joint of R1 and R2 is in a high level, at the moment, Q3 is kept and switched on, Q4 is switched off, the current of a Q3 tube mainly flows from a collector to an emitter, at the moment, the grid of a high-power SiC-MOSFET module Q5 is in a high level, junction capacitance is rapidly charged and is switched on, energy is provided by VCC1, and the driving capability is greatly enhanced. When the input signal A is low level and the signal B is high level, Q1 is cut off, Q2 is conducted, the level at the junction of R1 and R2 is low level, at the moment, Q3 is cut off, Q4 is saturated and conducted, the current of the Q4 tube mainly flows from the emitter to the collector, and at the moment, the capacitor of the junction of the high-power SiC-MOSFET module Q5 is rapidly discharged. The desaturation protection function is activated when the high power SiC-MOSFET module drain voltage spikes. When the desaturation protection is activated, the driving signal output is in a high resistance state, the Q6 drain voltage becomes low level, the soft shutdown process is started, then the level at the junction of R1 and R2 becomes low level, and the gate level of Q5 remains low level. When the SiC-MOSFET is turned off, in order to prevent a high voltage pulse from being generated between the grid electrode and the source electrode, the driving protection circuit has a miller clamping function, when an input signal is used for turning off the SiC-MOSFET module, Q6 is turned off, if the grid electrode voltage of Q5 is higher than the voltage VP, the comparator A1 outputs a high level to turn on Q7, at the moment, the base electrode of the triode Q8 is in a low level, the Q8 is turned on, the grid electrode voltage of the Q5 is rapidly reduced, and therefore the SiC-MOSFET is stably turned off.
The driving circuit designed by the invention is also provided with an undervoltage protection circuit which has an undervoltage locking function (UVLO), when the voltage of the power supply VCC1 is reduced, the control signal is output to be low level, when the stable driving capability is not enough provided, the fault is output to be low level, and when the voltage is recovered, the pins are reset.
The driving circuit provided by the embodiment enables the driving circuit to stably control the SiC-MOSFET module, and externally input control signals, fault signals and the like are processed in the LOGIC module LOGIC. When the driving circuit works normally, in order to prevent the drain voltage of the high-power SiC-MOSFET module from increasing suddenly, the circuit design has a desaturation protection function, when the drain voltage is larger than the protection voltage, the comparator A2 outputs a high level to the LOGIC module so as to control the level of an output signal, at the moment, the driving signal is output to be in a high resistance state, the drain voltage of the Q6 becomes a low level, a soft turn-off process is started, then the level at the joint of the R1 and the R2 becomes a low level, and the grid level of the Q5 keeps a low level. When the SiC-MOSFET is turned off, in order to prevent a high voltage pulse from being generated between the grid electrode and the source electrode, the driving protection circuit has a miller clamping function, wherein the clamping function is that when an input signal is used for enabling the SiC-MOSFET module to be turned off, Q6 is turned off, if the grid voltage of Q5 is higher than the voltage VP, the comparator A1 outputs a high level to enable Q7 to be turned on, at the moment, the base electrode of the triode Q8 is in a low level, the Q8 is turned on to enable the grid voltage of the Q5 to be rapidly reduced, and therefore the SiC-MOSFET is stably turned off.
The logic module in this embodiment may employ an existing chip, such as BM60052FV-C.
The foregoing is illustrative of the present invention and is not to be construed as limiting thereof, but rather as providing for the use of additional embodiments and advantages of all such modifications, equivalents, improvements and similar to the present invention are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (6)
1. A drive circuit of a SiC-MOSFET, comprising:
the circuit comprises an isolation circuit, a current amplifying module, a logic module and a protection circuit;
the input end of the isolation circuit is connected with an input signal, and the output end of the isolation circuit is connected with the input end of the logic module and is used for signal isolation;
the output end of the logic module is respectively connected with the current amplifying module and the protection circuit and is used for carrying out logic control on the working states of the current amplifying module and the protection circuit;
the input end of the current amplifying module is connected with the output end of the logic module, and the output end of the amplifying module is connected with the SiC-MOSFET and is used for amplifying and converting signals input through the logic circuit into driving currents meeting the requirements of the SiC-MOSFET;
the protection circuit is connected with the SiC-MOSFET and is used for preventing the SiC-MOSFET from misoperation caused by high voltage pulse generated between the gate and the source of the SiC-MOSFET and the drain voltage of the SiC-MOSFET from sudden increase when the SiC-MOSFET is turned off so as to realize stable turn-off of the SiC-MOSFET;
the current amplification module includes:
a current amplifying circuit and a totem-pole current amplifying circuit;
the current amplifying circuit is connected with the totem-pole current amplifying circuit in series and is used for carrying out primary amplification on an input signal;
the totem-pole current amplifying circuit is used for carrying out secondary amplification on the primary amplifying current and providing driving current meeting requirements for the SiC-MOSFET power module;
the current amplifying circuit includes:
MOS tube Q1, MOS tube Q2 and 3 diodes;
the input signals are connected to the grids of the MOS transistor Q1 and the MOS transistor Q2;
the source electrode of the MOS tube Q1 is connected with the power supply VCC1 and the cathode of the diode D1;
the source electrode of the MOS tube Q2 is connected with the power supply VEE1 and the anodes of the diode D2 and the diode D3;
the drains of the MOS transistor Q1 and the MOS transistor Q2 are respectively connected with the anode of the diode D1, the cathode of the diode D2, the cathode of the diode D3 and the input end of the totem pole current amplifying circuit;
the totem pole current amplifying circuit comprises:
triode Q3, triode Q4, first base current-limiting resistor R1, second base current-limiting resistor R2, first voltage-stabilizing resistor R3, second voltage-stabilizing resistor R4, first grid current-limiting resistor R5 and second grid current-limiting resistor R6;
the base electrode of the triode Q3 is connected with the first base electrode current limiting resistor R1 in series;
the base electrode of the triode Q4 is connected with the second base electrode current limiting resistor R2 in series;
the first base current limiting resistor R1 and the second base current limiting resistor R2 are connected in parallel and then connected into a current amplifying circuit;
the collector electrode of the triode Q3 is connected with a power supply VCC1, and the base electrode and the emitter electrode of the triode Q3 are connected with a first voltage stabilizing resistor R3;
the collector electrode of the triode Q4 is connected with a power supply VEE1, and the base electrode and the emitter electrode of the triode Q4 are connected with a second voltage stabilizing resistor R4;
an emitter of the triode Q3 is connected with the first grid current limiting resistor R5 in series;
the emitter of the triode Q4 is connected with the second grid current limiting resistor R6 in series;
the first grid current limiting resistor R5 and the second grid current limiting resistor R6 are connected in parallel and then connected into the SiC-MOSFET.
2. The drive circuit of claim 1, wherein the protection circuit comprises:
a miller clamp circuit and a desaturation protection circuit;
the miller clamp circuit is connected between the output end of the current amplifying module and the grid electrode of the SiC-MOSFET and is used for monitoring the voltage between the grid electrode and the source electrode of the SiC-MOSFET, and when the voltage between the grid electrode and the source electrode of the SiC-MOSFET is monitored to be greater than the grid electrode threshold value, the miller clamp circuit is activated to enable the SiC-MOSFET to be turned off stably;
the desaturation protection circuit is connected with the drain electrode of the SiC-MOSFET and used for monitoring the voltage of the drain electrode of the SiC-MOSFET, and when the voltage of the drain electrode of the SiC-MOSFET is greater than the drain electrode threshold value, the desaturation protection circuit is activated to enable the SiC-MOSFET to be turned off stably.
3. The drive circuit of claim 2, wherein the miller clamp circuit comprises:
MOS tube Q6, comparator A1, MOS tube Q7, triode Q8, resistor R9 and resistor R10;
the drain electrode of the MOS tube Q6 is connected with one end of a resistor R8 and one input end of the comparator A1, the other input end of the comparator A1 is connected with a gate threshold value, the gate electrode of the MOS tube Q6 is connected with the output end of the logic module, and the source electrode of the MOS tube Q6 is connected with a power supply VEE 2;
the drain electrode of the MOS tube Q7 is sequentially connected with one end of a resistor R10 and one end of a resistor R9, the grid electrode of the MOS tube Q7 is connected with the output end of the comparator A1, and the source electrode of the MOS tube Q7 is connected with a power supply VEE 1;
the base electrode of the triode Q8 is connected between a resistor R9 and a resistor R10, and the collector electrode of the triode Q8 is connected with a power supply VEE 1;
the emitter of the triode Q8, the other end of the resistor R8 and the other end of the resistor R9 are connected between the output end of the current amplifying module and the grid electrode of the SiC-MOSFET.
4. The drive circuit of claim 2, wherein the desaturation protection circuit comprises:
the device comprises a comparator A2, a zener diode ZD1, a capacitor C1, a resistor and a diode;
one input end of the comparator A2 is connected with the drain electrode of the SiC-MOSFET through a resistor R12, a diode D6 and a diode D7 in sequence, the other input end of the comparator A2 is connected with a drain electrode threshold value, and the output end of the comparator A2 is connected with a logic module;
the diode D5, the zener diode ZD1 and the capacitor C1 are connected in parallel and then connected between one input end of the comparator A2 and the resistor R12.
5. The drive circuit of claim 2, wherein the protection circuit further comprises:
an undervoltage protection circuit;
the input end of the undervoltage protection circuit is connected with a power supply VCC1, the output end of the undervoltage protection circuit is connected with a logic module and used for monitoring the voltage of the VCC1, and when the voltage of the VCC1 is insufficient to provide stable driving capability, a fault signal is input to the logic module to prevent the driving circuit from working.
6. The drive circuit of claim 1, wherein the isolation circuit comprises:
an optoelectronic transceiver and a voltage shaping circuit;
the input end of the photoelectric transceiver is connected with an input signal, the output end of the photoelectric transceiver is connected with the input end of the voltage shaping circuit, and the voltage shaping circuit is used for outputting stable rectangular level;
and the output end of the voltage shaping circuit is connected with the logic module.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910369797.5A CN111900969B (en) | 2019-05-05 | 2019-05-05 | Driving circuit of SiC-MOSFET |
| PCT/CN2019/120556 WO2020224234A1 (en) | 2019-05-05 | 2019-11-25 | Drive circuit for sic-metal-oxide-semiconductor field-effect transistor (sic-mosfet) |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910369797.5A CN111900969B (en) | 2019-05-05 | 2019-05-05 | Driving circuit of SiC-MOSFET |
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| CN111900969A CN111900969A (en) | 2020-11-06 |
| CN111900969B true CN111900969B (en) | 2023-12-19 |
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| CN201910369797.5A Active CN111900969B (en) | 2019-05-05 | 2019-05-05 | Driving circuit of SiC-MOSFET |
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| CN112821732A (en) * | 2021-03-12 | 2021-05-18 | 华北电力大学（保定） | High-frequency circuit driving circuit of parallel MOSFET |
| CN115037129B (en) * | 2022-06-17 | 2024-03-05 | 合肥工业大学 | Control circuit based on parallelly connected flow equalization of SiC MOSFET |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002135097A (en) * | 2000-10-26 | 2002-05-10 | Mitsubishi Electric Corp | Semiconductor device and module thereof |
| CN103199677A (en) * | 2013-04-08 | 2013-07-10 | 乐金电子研发中心(上海)有限公司 | One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit |
| CN203104317U (en) * | 2012-08-14 | 2013-07-31 | 深圳市东辰科技有限公司 | Synchronous rectification circuit capable of improving MPPT efficiency |
| CN103595225A (en) * | 2013-10-23 | 2014-02-19 | 北京赛德高科铁道电气科技有限责任公司 | IGBT driving circuit of converter for electric locomotive |
| CN108134510A (en) * | 2016-12-01 | 2018-06-08 | 上海汽车集团股份有限公司 | Igbt drive circuit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811942B (en) * | 2014-12-30 | 2019-07-12 | 国家电网公司 | A kind of MOSFET driving circuit and its application method with overcurrent protection function |
| US9705452B2 (en) * | 2015-10-30 | 2017-07-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Protection circuit for power amplifier |
| JP2017175047A (en) * | 2016-03-25 | 2017-09-28 | ソニー株式会社 | Semiconductor device, solid imaging element, imaging device, and electronic apparatus |
| CN108631557B (en) * | 2017-03-20 | 2020-03-10 | 台达电子企业管理（上海）有限公司 | Grid voltage control circuit of insulated gate bipolar transistor and control method thereof |
| US10569301B2 (en) * | 2017-06-23 | 2020-02-25 | Ulc Robotics, Inc. | Power supply for electromagnetic acoustic transducer (EMAT) sensors |
| CN109302169B (en) * | 2018-08-23 | 2022-04-22 | 北京长峰天通科技有限公司 | SiC MOSFET drive protection circuit and protection method thereof |
-
2019
- 2019-05-05 CN CN201910369797.5A patent/CN111900969B/en active Active
- 2019-11-25 WO PCT/CN2019/120556 patent/WO2020224234A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002135097A (en) * | 2000-10-26 | 2002-05-10 | Mitsubishi Electric Corp | Semiconductor device and module thereof |
| CN203104317U (en) * | 2012-08-14 | 2013-07-31 | 深圳市东辰科技有限公司 | Synchronous rectification circuit capable of improving MPPT efficiency |
| CN103199677A (en) * | 2013-04-08 | 2013-07-10 | 乐金电子研发中心(上海)有限公司 | One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit |
| CN103595225A (en) * | 2013-10-23 | 2014-02-19 | 北京赛德高科铁道电气科技有限责任公司 | IGBT driving circuit of converter for electric locomotive |
| CN108134510A (en) * | 2016-12-01 | 2018-06-08 | 上海汽车集团股份有限公司 | Igbt drive circuit |
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| CN111900969A (en) | 2020-11-06 |
| WO2020224234A1 (en) | 2020-11-12 |
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