CN108134510A - Igbt drive circuit - Google Patents
Igbt drive circuit Download PDFInfo
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- CN108134510A CN108134510A CN201611091639.0A CN201611091639A CN108134510A CN 108134510 A CN108134510 A CN 108134510A CN 201611091639 A CN201611091639 A CN 201611091639A CN 108134510 A CN108134510 A CN 108134510A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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Abstract
A kind of IGBT drive circuit, including：Signal isolation circuit is isolated suitable for exterior control voltage and to it, to obtain the first control voltage；Amplifying circuit, suitable for being amplified to the described first control voltage, output terminal output the second control voltage；Signal conditioning circuit, suitable for generating third control voltage according to the described second control voltage, to control the turn-on and turn-off of IGBT, the third control voltage is configurable.Technical solution of the present invention can expand the scope of application of IGBT drive circuit.
Description
Technical field
The present invention relates to integrated circuit fields more particularly to a kind of IGBT drive circuits.
Background technology
With the fast development of hybrid vehicle and pure electric automobile, the motor on vehicle is carried out effectively and reliably
Control is that vehicle is normal, guarantee of safe operation.Insulated gate bipolar transistor (Insulated Gate Bipolar
Transistor, IGBT) in the application of frequency conversion equipment occupy leading position.IGBT can be provided for the motor of hybrid system
Energy.The advantages of IGBT is the multiple device of MOSFET pipes and bipolar transistor, and existing MOSFET easily drives, but it is brilliant with power
Body tube voltage, the advantages that current capacity is big, frequency characteristic are managed between MOSFET between power transistor, can work normally in
In the frequency range of kilohertz.In order to which IGBT is allowed reliably and securely to work, grid should connect matching driving electricity
Road.IGBT drive circuit is the difficult point and key of its application scheme design.The driving circuit of function admirable be to ensure that IGBT efficiently,
The necessary condition of reliability service, especially on electric circumstance and the vehicle of the traveling of road conditions complicated condition, to the driving circuit
Anti-interference and reliability requirement higher.
Typical IGBT drive circuit generally all has driving power defencive function in prior art, but is provided
Driving voltage to IGBT is all immutable, and no more than -7.5V.
The immutableness for the driving voltage that IGBT drive circuit of the prior art is exported leads to what these circuits were applied
Limitation.Interfering larger application scenario, such as when vehicle launch or emergency braking, IGBT be possible without reliable turn-off and
It misleads, causes accident so as to cause motor malfunction；It is past in the IGBT module for using different capacity grade
Toward redesign type selecting drive system is needed, cost increases.
Invention content
Present invention solves the technical problem that it is how to expand the scope of application of IGBT drive circuit.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of IGBT drive circuit, IGBT drive circuit includes：
Signal isolation circuit is isolated suitable for exterior control voltage and to it, to obtain the first control voltage；Amplification electricity
Road, suitable for being amplified to the described first control voltage, output terminal output the second control voltage；Signal conditioning circuit is suitable for
Third control voltage is generated according to the described second control voltage, to control the turn-on and turn-off of IGBT, the third controls voltage
It is configurable.
Optionally, the signal conditioning circuit includes：First resistor, first end access supply voltage；It is sequentially connected in series
Second resistance, 3rd resistor and the 4th resistance, the first end of the second resistance couples the second end of the first resistor, described
The second end ground connection of 4th resistance；The first transistor, base stage couple the second end of the first resistor, described in one end access
Supply voltage, output terminal of the other end as the signal conditioning circuit export the third control voltage；Second crystal
Pipe, base stage couple the second end of the 3rd resistor, and one end couples the other end of the first transistor, another termination
Ground.
Optionally, the signal conditioning circuit further includes：5th resistance, first end coupling supply voltage；6th resistance,
Its first end couples the second end of the 5th resistance, second end ground connection；7th resistance, first end access the power supply electricity
Pressure；First diode, cathode couple the second end of the 7th resistance, and as the first output of the signal conditioning circuit
End；Second diode, cathode couple the anode of first diode, and anode couples the second end of the 5th resistance simultaneously
Second output terminal as the signal conditioning circuit.
Optionally, the signal conditioning circuit further includes：Third diode, cathode access the supply voltage；First
Capacitance, first end couple the anode of the third diode；8th resistance, first end couple the second of first capacitance
End, second end couple the output terminal of the amplifying circuit；9th resistance, first end couple the output of the amplifying circuit
End；Second capacitance, first end couple the second end of the 9th resistance；4th diode, cathode coupling second electricity
The second end of appearance, plus earth.
The optional IGBT drive circuit further includes：ON-OFF control circuit is suitable for couple to the signal conditioning circuit
First output terminal and second output terminal, and the electricity exported according to the first output terminal and second output terminal of the signal conditioning circuit
Pressure generates the 4th control voltage and the 5th control voltage respectively, to control the turn-on and turn-off of IGBT respectively.
Optionally, the ON-OFF control circuit includes the first metal-oxide-semiconductor and the second metal-oxide-semiconductor；Wherein, first metal-oxide-semiconductor
First output terminal of the grid coupling signal conditioning circuit, one end coupling supply voltage of first metal-oxide-semiconductor, described first
The base stage of the other end coupling IGBT of metal-oxide-semiconductor；The grid of second metal-oxide-semiconductor couples the second output of the signal conditioning circuit
End, one end ground connection of second metal-oxide-semiconductor, the base stage of the other end coupling IGBT of second metal-oxide-semiconductor.
Optionally, when the described second control voltage is high level, the first transistor cut-off, the 3rd resistor with
4th resistance makes between the base stage of the second transistor and ground that there are pressure differences, the second transistor to lead by partial pressure
Logical, the anode of first diode is grounded via the second transistor, and first diode is breakdown, and the described 1st
The cathode voltage of pole pipe controls the first metal-oxide-semiconductor conducting, and the supply voltage provides base via first metal-oxide-semiconductor for IGBT
Pole tension, control IGBT conductings；When the described second control voltage is low level, the second transistor cut-off, described first
The partial pressure of resistance and the second resistance is so that there are pressure difference, institutes between the base stage of the first transistor and the supply voltage
The first transistor conducting is stated, the cathode of second diode accesses the supply voltage via the first transistor, described
Second diode is breakdown, and the anode voltage of second diode controls the second metal-oxide-semiconductor conducting, the base stage of IGBT via
The second metal-oxide-semiconductor release charge controls IGBT shutdowns to ground.
Optionally, by the way that the voltage stabilizing value of first diode and second diode is configured, with to the third control
Voltage processed is configured.
Optionally, the IGBT drive circuit further includes：Observation circuit couples the collector of IGBT, suitable for IGBT's
Voltage between collector and emitter is detected, and when detecting IGBT exceptions, and protection is taken to operate.
Optionally, the observation circuit includes：5th diode, cathode couple the current collection of IGBT via load resistance
Pole；Third transistor, base stage couple the anode of the 5th diode, one end ground connection；Tenth resistance, first end coupling
The other end of the third transistor；6th diode, cathode couple the second end of the tenth resistance；11st resistance,
Its first end couples the anode of the 6th diode, second end access supply voltage.
Optionally, when IGBT exits saturation, base-emitter voltage is higher than its conducting voltage, collector and emitter
Between voltage raising, the cathode potential of the 5th diode is caused to rise, the 5th diode is breakdown, the third
Transistor turns, the first end output low level of the tenth resistance, to indication circuit working condition exception；Pass through described
The partial pressure of ten resistance and the 11st resistance so that the current potential of the second control voltage is low level, and the base stage of IGBT is released
Lotus discharge to ground, IGBT is turned off.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
The IGBT drive circuit of technical solution of the present invention includes signal isolation circuit, amplifying circuit and signal conditioning circuit：
Wherein, signal isolation circuit is suitable for exterior control voltage and it is isolated, to obtain the first control voltage；Amplifying circuit is fitted
It is amplified in the described first control voltage, output terminal output the second control voltage；Signal conditioning circuit is suitable for according to institute
It states the second control voltage and generates third control voltage, to control the turn-on and turn-off of IGBT, the third control voltage is can to match
It puts.Technical solution of the present invention can be matched by setting signal modulate circuit so that IGBT drive circuit can be provided for IGBT
The third control voltage put, to control the turn-on and turn-off of IGBT, so as to so that IGBT drive circuit can drive different work(
The IGBT of rate grade expands the scope of application of IGBT drive circuit.
Further, ON-OFF control circuit can include the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, to control the conducting of IGBT respectively
And shutdown.Since internal resistance is very low when metal-oxide-semiconductor is connected, ideal charge release access can be provided for IGBT, so as to meet IGBT
The demand of quick release charge when off, and then promote the driveability of IGBT drive circuit.
Description of the drawings
Fig. 1 is a kind of structure chart of IGBT drive circuit of the embodiment of the present invention；
Fig. 2 is the structure chart of another kind IGBT drive circuit of the embodiment of the present invention；
Fig. 3 is the structure chart of another IGBT drive circuit of the embodiment of the present invention；
Fig. 4 is the structure chart of another IGBT drive circuit of the embodiment of the present invention.
Specific embodiment
As described in the background art, the immutableness for the driving voltage that IGBT drive circuit of the prior art is exported is led
The limitation that these circuits is caused to apply.Larger application scenario is being interfered, such as when vehicle launch or emergency braking, IGBT has can
It reliable turn-off and can will not mislead, cause accident so as to cause motor malfunction；Using different capacity etc.
During the IGBT module of grade, generally require to redesign type selecting drive system, cost increases.
And the IGBT drive circuit of function admirable should have following characteristics：There are good isolation features and right first
The delay very little of signal；Secondly forward and reverse base voltage of certain amplitude should be able to be provided and with enough driving energies
Power；In addition, circuit structure is also simple as possible, compact, to save installation space.
Technical solution of the present invention is by setting signal modulate circuit, so that can be provided for IGBT can for IGBT drive circuit
The third control voltage of configuration, it is stronger anti-dry by providing back bias voltage realization positive enough to control the turn-on and turn-off of IGBT
Immunity energy, so as to so that IGBT drive circuit can drive the IGBT of different capacity grade, expand IGBT drive circuit
The scope of application.Meanwhile IGBT drive circuit compact, it is easily integrated；IGBT drive circuit also have good strong and weak electricity every
From performance.
It is understandable for the above objects, features and advantages of the present invention is enable to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 1 is a kind of structure chart of IGBT drive circuit of the embodiment of the present invention.
As shown in Figure 1, IGBT drive circuit can include signal isolation circuit 101, amplifying circuit 102 and signal condition electricity
Road 103.
Wherein, signal isolation circuit 101 is suitable for exterior control voltage Vin and it is isolated, to obtain the first control
Voltage Vout1.
Amplifying circuit 102 is suitable for being amplified the described first control voltage, output terminal output the second control voltage
Vout2。
Signal conditioning circuit 103 is suitable for generating third control voltage Vout3 according to the described second control voltage Vout2, with
The turn-on and turn-off of IGBT are controlled, the third control voltage Vout3 is configurable.
In specific implementation, signal isolation circuit 101 can realize the access of control voltage Vin, while realize external control
Circuit (namely front stage circuits) is isolated with IGBT drive circuit, avoids signal interference.Specifically, signal isolation circuit 101 can
To be photoelectrical coupler.Control wave of the input terminal connection from external control circuit of photoelectrical coupler, the electricity of output
Pressure signal can control the break-make of IGBT by subsequent conditioning circuit.
It, can be to the first control voltage of the output of signal isolation circuit 101 in order to ensure driving force in specific implementation
Vout1 is amplified, which can be realized by amplifying circuit 102.
In specific implementation, signal conditioning circuit 103, which generates third control voltage Vout3, can control conducting and the pass of IGBT
It is disconnected, and the third control voltage Vout3 that signal conditioning circuit 103 generates can be configured, then it can be by the way that signal be configured
The third control voltage Vout3 that modulate circuit 103 generates, enables IGBT drive circuit to be applicable in the IGBT in the range of different capacity,
Expand the scope of application of IGBT drive circuit.
Fig. 2 is the structure chart of another kind IGBT drive circuit of the embodiment of the present invention.
As shown in Fig. 2, signal isolation circuit 101 is photoelectrical coupler U1.Amplifying circuit 102 is transistor VT3.Photoelectricity coupling
The control voltage of the input terminal access front stage circuits of clutch U1, the base stage of the output terminal coupling transistors VT3 of photoelectrical coupler U1,
With the break-make of controlling transistor VT3.For example, the input PIN foot 1 of photoelectrical coupler U1 and input PIN foot 2 access front stage circuits
Control voltage, the base stage of 3 coupling transistors VT3 of output PIN foot.Transistor VT3 can be used for turning on and off control IGBT
Required base stage pulse carries out prime power amplification.
Specifically, the base stage of transistor VT3 is connected to supply voltage (namely supply voltage) VCC, transistor by resistance
The emitter ground connection of VT3.When the first control voltage of photoelectrical coupler U1 outputs so that transistor VT3 is connected, transistor VT3
Collector potential for 0, the second control voltage is low level, and A points current potential is 0；When the first control of photoelectrical coupler U1 outputs
When voltage so that transistor VT3 is turned off, the collector potential of transistor VT3 is supply voltage VCC, and the second control voltage is high electricity
Flat, A points current potential is supply voltage VCC.
In the present embodiment, signal conditioning circuit 103 can include first resistor R1, second resistance R2,3rd resistor R3, the
Four resistance R4, the first transistor VT1 and second transistor VT2.
Wherein, the first end access supply voltage of first resistor R1；Second resistance R2,3rd resistor R3 and the 4th resistance R4
It being sequentially connected in series, the first end of the second resistance R2 couples the second end of the first resistor R1, and the of the 4th resistance R4
Two ends are grounded；The base stage of the first transistor VT1 couples the second end of the first resistor R1, and emitter accesses the power supply electricity
VCC is pressed, output terminal of the collector as the signal conditioning circuit 103 exports the third control voltage；Second transistor
VT2, base stage couple the second end of the 3rd resistor R3, and collector couples the other end of the first transistor, hair
Emitter grounding.Specifically, the output terminal of signal conditioning circuit 103 can be with the B points in circuit shown in corresponding diagram 2.
In specific implementation, the output terminal of voltage modulate circuit 103 can provide appropriate electricity for the turn-on and turn-off of IGBT
Pressure.Specifically, when A point current potentials are low level (such as voltage value is 0), the second transistor VT2 cut-offs, described first
The partial pressure of the resistance R1 and second resistance R2 is so that between the base stage of the first transistor VT1 and the supply voltage VCC
There are pressure difference, the first transistor VT1 conductings, supply voltage VCC provides base stage electricity via the first transistor VT1 for IGBT
Pressure, control IGBT conductings.When A points current potential is supply voltage VCC, the first transistor VT1 cut-offs, the 3rd resistor R3
Made between the base stage of the second transistor VT2 and ground there are pressure difference by partial pressure with the 4th resistance R4, described second is brilliant
Body VT2 pipes are connected, and the base stage of IGBT is via the second crystal VT2 release charges to ground, control IGBT shutdowns.
In the present embodiment, when A points current potential is 0, the current potential of the output terminal (namely B points) of voltage modulate circuit 103 is electricity
Source voltage VCC；When A points current potential is supply voltage VCC, current potential 0.It that is, can be by the way that supply voltage VCC be configured
Conducting voltage is provided come the IGBT for different capacity.
It will be appreciated by those skilled in the art that the type of transistor VT3, the first transistor VT1 and second transistor VT2
(such as PNP triode and NPN triode) can be chosen and be configured according to practical application environment；Transistor VT3, first
Transistor VT1 and second transistor VT2 can also be replaced by the switching tube of specific arbitrary enforceable switching function.
Due to transistor (the first transistor VT1 and the second crystal VT2) allow by electric current it is smaller, in order to further
The driving force of IGBT drive circuit is improved, it, can be to voltage modulate circuit on the basis of IGBT drive circuit shown in Fig. 2
103 further are improved.
Fig. 3 is please referred to, Fig. 3 is the structure chart of another IGBT drive circuit of the embodiment of the present invention.
Together with reference to Fig. 2, the signal conditioning circuit 103 of the present embodiment can include first resistor R1, second resistance R2, the
Three resistance R3, the 4th resistance R4, the first transistor VT1 and second transistor VT2；Signal conditioning circuit 103 can also include the
Five resistance R5, the 6th resistance R6, the 7th resistance R7, the first diode Z1 and the second diode Z2.
Wherein, the 5th resistance R5 first ends coupling supply voltage VCC；6th resistance R6 first ends couple the 5th resistance
The second end of R5, second end ground connection；7th resistance R7 first ends access the supply voltage VCC；First diode Z1 cathodes
The second end of the 7th resistance R7 is coupled, and as the first output terminal of the signal conditioning circuit 103；Second diode Z2
Cathode couples the anode of the first diode Z1, and anode couples the second end of the 5th resistance R5 and is used as the signal
The second output terminal of modulate circuit 103.
In the present embodiment, IGBT drive circuit further includes ON-OFF control circuit 301.ON-OFF control circuit 301 is suitable for couple to
The first output terminal and second output terminal of the signal conditioning circuit 103, and first according to the signal conditioning circuit 103 is defeated
Outlet and the voltage of second output terminal output generate the 4th control voltage and the 5th control voltage respectively, to control IGBT's respectively
Turn-on and turn-off.Specifically, the first output terminal of signal conditioning circuit 103 and second output terminal distinguish circuit shown in corresponding diagram 3
In C points and D points.
In specific implementation, the ON-OFF control circuit 301 can include the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2；Wherein,
First output terminal of the grid coupling signal conditioning circuit 103 of the first metal-oxide-semiconductor Q1, the one of the first metal-oxide-semiconductor Q1
The base stage of the other end coupling IGBT of end coupling supply voltage VCC, the first metal-oxide-semiconductor Q1；The grid of the second metal-oxide-semiconductor Q2
Couple the second output terminal of the signal conditioning circuit 103, one end ground connection of the second metal-oxide-semiconductor Q2, the second metal-oxide-semiconductor Q2
The other end coupling IGBT base stage.
Specifically, when amplifying circuit 102 export second control voltage be high level when namely A point current potentials be high level
When, the first transistor VT1 cut-offs, the 3rd resistor R3 and the 4th resistance R4 makes second crystal by partial pressure
There are pressure differences namely F point voltages between the base stage and ground of pipe VT2 to cause the second transistor VT2 to be connected, the one or two pole
The anode of pipe Z1 is grounded via the second transistor VT2, and the first diode Z1 is breakdown, and C points voltage is the one or two pole
Voltage stabilizing value Vz1, the C point voltage of pipe Z1 controls the first metal-oxide-semiconductor Q1 conductings, and the supply voltage VCC is via the first MOS
Pipe Q1 provides base voltage, control IGBT conductings for IGBT；When A points current potential is low level, the second transistor VT2 is cut
Only, the partial pressure of the first resistor R1 and second resistance R2 is so that base stage and the power supply of the first transistor VT1
There are pressure differences namely E point voltages between voltage VCC to cause the first transistor VT1 to be connected, the moon of the second diode Z2
The supply voltage VCC is accessed in pole via the first transistor VT1, and the second diode Z2 is breakdown, and D points voltage is electricity
Difference VCC-Vz2, the D point voltage of the voltage stabilizing value of source voltage and the second diode Z2 controls the second metal-oxide-semiconductor Q2 conductings, IGBT's
Base stage is via second metal-oxide-semiconductor release charge to ground, control IGBT shutdowns.
In the present embodiment, the first output terminal namely the C point of voltage modulate circuit 103, when A points current potential is high level,
Voltage is the voltage stabilizing value Vz1 of the first diode Z1；Second output terminal namely the D point of voltage modulate circuit 103 is in A point current potentials
During low level, voltage is supply voltage and the difference VCC-Vz2 of the voltage stabilizing value of the second diode Z2.That is, it can pass through
Supply voltage VCC, the voltage stabilizing value of the first diode Z1 and the voltage stabilizing value of the second diode Z2 is configured, to control the first metal-oxide-semiconductor Q1
With the conducting of the second metal-oxide-semiconductor Q2, and then the IGBT for different capacity provides conducting voltage.
It will be apparent to a skilled person that the first metal-oxide-semiconductor Q1 shown in Fig. 3 is PMOS tube, the second metal-oxide-semiconductor Q2 is
NMOS tube；And in specific application scenarios, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 can also coordinate signal conditioning circuit to select
Different combinations is taken, such as the first metal-oxide-semiconductor Q1 is NMOS tube, the second metal-oxide-semiconductor Q2 is PMOS tube, and the embodiment of the present invention does not do this
Limitation.
Furthermore, can enable to be applicable in not by the model of selection the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2
With the IGBT in power bracket.And then the voltage stabilizing value that the first diode Z1 and the second diode Z2 can be selected appropriate, make it
Control has turning on and off for the metal-oxide-semiconductor of different driving power.Closer, metal-oxide-semiconductor turns on and off voltage value one
As requirement for minus more than ten volts to positive more than ten volts；If after the voltage stabilizing value for selecting the first diode Z1 and the second diode Z2 appropriate,
Signal conditioning circuit can provide the driving voltage of positive and negative 10V or so, then can meet the break-make need of most metal-oxide-semiconductor
It asks, so as to so that IGBT drive circuit can drive the IGBT of different capacity grade, expand being applicable in for IGBT drive circuit
Range.
Speed is opened more slowly due to transistor, IGBT drive circuit shown in Fig. 2 is to the switching speed of IGBT
There is certain limitation, so in the application scenarios not high to the switching speed requirements of IGBT, IGBT shown in Fig. 2 may be used
Driving circuit.In IGBT drive circuit shown in Fig. 3, using the logical of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 controls IGBT
Disconnected, since the driving power of metal-oxide-semiconductor is high, switching speed is fast, can further promote the performance of IGBT drive circuit.
For IGBT drive circuit, it is desirable to provide give IGBT suitable base drive voltages.Base stage positive drive voltage
Size will influence IGBT performances big.When positive drive voltage increases, the conducting resistance of IGBT declines, then conduction loss subtracts
It is small.If positive drive voltage is excessive, IGBT damages are easily caused；If positive drive voltage is too small, IGBT is easily made to exit saturation and is led
Lead to area into linear amplification region, IGBT is easy to cross cause thermal damage.In addition, IGBT drive circuit it is also required to provide to drive enough IGBT
Streaming current.Since tri- poles of IGBT are between any two there is larger parasitic capacitance, in the rising and decline of driving pulse voltage
During edge, there are larger charging and discharging currents.In order to meet the dynamic requirements of its turn-on and turn-off, then require its driving circuit will
With certain peak point current fan-out capability, make IGBT be not to exit saturation conduction area under normal work and overload situations and
Damage.Fig. 2 and IGBT drive circuit shown in Fig. 3 can meet above-mentioned requirements in the embodiment of the present invention.
The tool of signal isolation circuit 101 (photoelectrical coupler U1), amplifying circuit 102 (transistor VT3) in the present embodiment
Body embodiment can refer to IGBT drive circuit shown in Fig. 2, and details are not described herein again.
Fig. 4 is the structure chart of another IGBT drive circuit of the embodiment of the present invention.
Together with reference to Fig. 2 and Fig. 3, compared to IGBT drive circuit shown in Fig. 3, signal conditioning circuit 103 further includes the
Three diode A1, the first capacitance C1, the 8th resistance R8, the 9th resistance R9 and the second capacitance C2 and the 4th diode A2, to inhibit
Surge present in signal conditioning circuit 103, with protection signal modulate circuit 103.
Wherein, third diode A1 cathodes access the supply voltage VCC；First capacitance C1 first ends couple the third
The anode of diode A1；8th resistance R8 first ends couple the second end of the first capacitance C1, are put described in second end coupling
The output terminal of big circuit 102；9th resistance R9 first ends couple the output terminal of the amplifying circuit 102；Second capacitance C2 first
End couples the second end of the 9th resistance R9；4th diode A2 cathodes couple the second end of the second capacitance C2, sun
Pole is grounded.
Specifically, the 9th resistance R9 and the second capacitance C2 provide base in transistor VT3 shutdown moments for second transistor VT2
Electrode current access, to avoid the working condition of IGBT is influenced；Similarly, the 8th resistance R8 and the first capacitance C1 are in transistor VT3
Conducting moment provides base current access for the first transistor VT1.When 3rd resistor R3 and the 4th resistance R4 intermediate potentials namely
F points accidentally occur during negative pressure (such as momentary surges etc.), the 4th diode A2 conductings, can be by the emitter of second transistor VT2
Voltage clamping is in -0.7V, the anti-excessively high reverse breakdown second transistor VT2 of negative pressure here.Similarly, as first resistor R1 and second
Resistance R2 intermediate potentials namely E points accidentally occur during negative pressure (such as momentary surges etc.), third diode A1 conductings, can be by the
The emitter voltage clamper of one transistor VT1 is in -0.7V, the anti-excessively high reverse breakdown the first transistor VT1 of negative pressure here.
IGBT drive circuit shown in Fig. 4 further includes observation circuit 401, and observation circuit 401 couples the collector of IGBT, fits
Voltage between the collector and emitter to IGBT is detected, and when detecting IGBT exceptions, and protection is taken to operate.
Protection operation can be preset any appropriate operation.
In specific implementation, observation circuit 401 can include：5th diode Z3, third transistor VT4, the tenth resistance
R10, the 6th diode A3 and the 11st resistance R11.Wherein, transistor VT3 accesses supply voltage via the 11st resistance R11
VCC。
Wherein, the 5th diode Z3 cathodes couple the collector of IGBT via load resistance (not shown)；Third transistor
VT4 base stages couple the anode of the 5th diode Z3, one end ground connection；It is brilliant that tenth resistance R10 first ends couple the third
The other end of body pipe VT4；6th diode A3 cathodes couple the second end of the tenth resistance R10；11st resistance R11,
First end couples the anode of the 6th diode A3, second end access supply voltage VCC.
Specifically, during IGBT normallies, IGBT is operated in saturation state, and collector is with emitting the voltage drop of interpolar very
Small, IGBT emitter voltages are stablized, and the current potential of IGBT collectors is very low.When IGBT exits saturation, between base stage and emitter
Voltage higher than its conducting voltage, the voltage raising between collector and emitter, therefore IGBT collector voltages increase, the 5th
Diode Z3 cathodes couple the collector of IGBT, the cathode potential of the 5th diode Z3 are caused to rise, the five or two pole
Pipe Z3 is breakdown, and the third transistor VT4 conductings, the first end of the tenth resistance R10 is as output PIN foot P5, output
Low level, to represent the circuit working state of IGBT drive circuit exception；Pass through the tenth resistance R10 and the described 11st
The partial pressure of resistance R11 so that A points current potential is low level, and to ground, IGBT is turned off the base stage release charge of IGBT.
Furthermore, output PIN foot P5 can represent the working condition of IGBT drive circuit, if IGBT normallies and
Shutdown, then export PIN foot P5 and export high level always；If IGBT operation irregularities exit saturation state, then third transistor VT4
It is breakdown, output PIN foot P5 output rectangular waves.
Specifically, in IGBT normallies and shutdown, third capacitance C3, the 4th capacitance C4 and the 13rd resistance R13 structures
Into circuit the cathode potential of the 5th diode Z3 can be caused not increase, it is breakdown to avoid the 5th diode Z3.As a result,
In observation circuit 401, by carrying out resistance value proportioning to the tenth resistance R10 and the 11st resistance R11, it can make at this time
A points current potential keeps a relatively low value, so as to the partial pressure of first resistor R1 and second resistance R2 the first transistor VT1 is led
Logical, the partial pressure of 3rd resistor R3 and the 4th resistance R4 cause the first transistor VT2 to end, and the second diode Z2 is breakdown, first
Metal-oxide-semiconductor Q1 ends, and the second metal-oxide-semiconductor Q2 conductings discharge rapidly, IGBT so as to which the base charge for making IGBT passes through the second metal-oxide-semiconductor Q2
Cut-off, collector, which generates big noise, when avoiding the IGBT from exiting saturation state causes IGBT to damage.
Closer, due to when carrying out resistance value proportioning to the tenth resistance R10 and the 11st resistance R11, the tenth
The resistance value of resistance R10 is smaller；And the conducting electric current of third transistor VT4 is usually tens milliamperes, in order to avoid electric current is excessive right
Third transistor VT4 is damaged, while resistance value proportioning is carried out to the tenth resistance R10 and the 11st resistance R11, also
It can be shunted by the 12nd resistance R12, to realize the current limliting to third transistor VT4.
The tool of signal isolation circuit 101 (photoelectrical coupler U1), amplifying circuit 102 (transistor VT3) in the present embodiment
Body embodiment can refer to IGBT drive circuit shown in Fig. 2, and details are not described herein again.
It should be noted that " low level (either low potential) " and " high level (or high potential) " are opposite herein
Concept, the specific range of the two do not limit, as long as low level voltage value is less than the voltage value of high level.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of IGBT drive circuit, which is characterized in that including：
Signal isolation circuit is isolated suitable for exterior control voltage and to it, to obtain the first control voltage；
Amplifying circuit, suitable for being amplified to the described first control voltage, output terminal output the second control voltage；
Signal conditioning circuit, suitable for according to described second control voltage generate third control voltage, with control the conducting of IGBT and
Shutdown, the third control voltage are configurable.
2. IGBT drive circuit according to claim 1, which is characterized in that the signal conditioning circuit includes：
First resistor, first end access supply voltage；
Second resistance, 3rd resistor and the 4th resistance being sequentially connected in series, first end coupling first electricity of the second resistance
The second end of resistance, the second end ground connection of the 4th resistance；
The first transistor, base stage couple the second end of the first resistor, and one end accesses the supply voltage, the other end
As the output terminal of the signal conditioning circuit, the third control voltage is exported；
Second transistor, base stage couple the second end of the 3rd resistor, and one end couples the another of the first transistor
End, other end ground connection.
3. IGBT drive circuit according to claim 2, which is characterized in that the signal conditioning circuit further includes：
5th resistance, first end coupling supply voltage；
6th resistance, first end couple the second end of the 5th resistance, second end ground connection；
7th resistance, first end access the supply voltage；
First diode, cathode couples the second end of the 7th resistance, and first as the signal conditioning circuit is defeated
Outlet；
Second diode, cathode couple the anode of first diode, and anode couples the second end of the 5th resistance
And as the second output terminal of the signal conditioning circuit.
4. IGBT drive circuit according to claim 3, which is characterized in that the signal conditioning circuit further includes：
Third diode, cathode access the supply voltage；
First capacitance, first end couple the anode of the third diode；
8th resistance, first end couple the second end of first capacitance, and second end couples the output of the amplifying circuit
End；
9th resistance, first end couple the output terminal of the amplifying circuit；
Second capacitance, first end couple the second end of the 9th resistance；
4th diode, cathode couple the second end of second capacitance, plus earth.
5. IGBT drive circuit according to claim 3, which is characterized in that further include：
ON-OFF control circuit couples the first output terminal and second output terminal of the signal conditioning circuit, suitable for according to the letter
The voltage of the first output terminal and the second output terminal output of number modulate circuit generates the 4th control voltage and the 5th control electricity respectively
Pressure, to control the turn-on and turn-off of IGBT respectively.
6. IGBT drive circuit according to claim 5, which is characterized in that the ON-OFF control circuit includes the first MOS
Pipe and the second metal-oxide-semiconductor；Wherein, the grid of first metal-oxide-semiconductor couples the first output terminal of the signal conditioning circuit, and described the
One end coupling supply voltage of one metal-oxide-semiconductor, the base stage of the other end coupling IGBT of first metal-oxide-semiconductor；Second metal-oxide-semiconductor
Grid couples the second output terminal of the signal conditioning circuit, and one end of second metal-oxide-semiconductor is grounded, second metal-oxide-semiconductor
The other end couples the base stage of IGBT.
7. IGBT drive circuit according to claim 6, which is characterized in that when the described second control voltage is high level
When, the first transistor cut-off, the 3rd resistor makes the base of the second transistor with the 4th resistance by partial pressure
There are pressure differences between pole and ground, and the second transistor conducting, the anode of first diode is via the second transistor
Ground connection, first diode is breakdown, and the cathode voltage of first diode controls the first metal-oxide-semiconductor conducting, described
Supply voltage provides base voltage, control IGBT conductings via first metal-oxide-semiconductor for IGBT；When the described second control voltage is
During low level, the second transistor cut-off, the partial pressure of the first resistor and the second resistance causes the first crystal
There are pressure difference, the first transistor conducting, the cathode warps of second diode between the base stage of pipe and the supply voltage
The supply voltage is accessed by the first transistor, second diode is breakdown, the anode electricity of second diode
Voltage-controlled system the second metal-oxide-semiconductor conducting, the base stage of IGBT is via second metal-oxide-semiconductor release charge to ground, control IGBT shutdowns.
8. IGBT drive circuit according to claim 3, which is characterized in that by the way that first diode and described is configured
The voltage stabilizing value of second diode, third control voltage to be configured.
9. IGBT drive circuit according to claim 1, which is characterized in that further include：
Observation circuit couples the collector of IGBT, is detected suitable for the voltage between the collector and emitter to IGBT, and
When detecting IGBT exceptions, protection is taken to operate.
10. IGBT drive circuit according to claim 9, which is characterized in that the observation circuit includes：
5th diode, cathode couple the collector of IGBT via load resistance；
Third transistor, base stage couple the anode of the 5th diode, one end ground connection；
Tenth resistance, first end couple the other end of the third transistor；
6th diode, cathode couple the second end of the tenth resistance；
11st resistance, first end couple the anode of the 6th diode, second end access supply voltage.
11. IGBT drive circuit according to claim 10, which is characterized in that when IGBT exits saturation, base stage and hair
Higher than its conducting voltage, the voltage raising between collector and emitter leads to the five or two pole for voltage between emitter-base bandgap grading
The cathode voltage of pipe rises, and the 5th diode is breakdown,
The third transistor conducting, the first end output low level of the tenth resistance are different to indication circuit working condition
Often；Passing through the partial pressure of the tenth resistance and the 11st resistance so that the current potential of the second control voltage is low level,
To ground, IGBT is turned off the base stage release charge of IGBT.
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| CN201611091639.0A CN108134510B (en) | 2016-12-01 | 2016-12-01 | IGBT drive circuit |
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| CN201611091639.0A CN108134510B (en) | 2016-12-01 | 2016-12-01 | IGBT drive circuit |
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| CN108134510B (en) | 2020-10-27 |
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