CN114039589B - MOS tube driving circuit - Google Patents

MOS tube driving circuit Download PDF

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Publication number
CN114039589B
CN114039589B CN202111328659.6A CN202111328659A CN114039589B CN 114039589 B CN114039589 B CN 114039589B CN 202111328659 A CN202111328659 A CN 202111328659A CN 114039589 B CN114039589 B CN 114039589B
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capacitor
voltage
driving
signal
triode
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CN114039589A (en
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蒋忠伟
周雨成
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Shenzhen Daren High Tech Electronic Co ltd
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Shenzhen Daren High Tech Electronic Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0063—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with circuits adapted for supplying loads from the battery
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

The invention provides an MOS tube driving circuit which comprises a power supply, a first signal generating module, a chip, an energy storage module, a control module and a driving module. The power supply outputs a first voltage, and the first signal generation module generates a first signal. Based on the first signal, the chip outputs a first driving signal. Based on the driving voltage output by the energy storage module, the chip outputs a second driving signal. The energy storage module receives a first driving signal, and receives and stores a first voltage based on the first driving signal. Based on the first driving signal and the second driving signal, the energy storage module converts the first voltage into a second voltage, and the energy storage module stores the second voltage. The control module outputs a control signal, based on the control signal and the second voltage, the driving module outputs a third driving signal to be output to a grid electrode of the MOS tube group, and the third driving signal controls the MOS tube group to be switched on and switched off, so that the MOS tube group controls the battery pack to output voltage to a load.

Description

MOS tube driving circuit
Technical Field
The present invention relates to the field of circuits, and in particular, to a driving circuit.
Background
In modern society, electronic devices require on-off control of a power supply. The existing driving circuit usually controls the high-side MOS tube through a special chip, and the special chip is high in cost and narrow in application range, so that the existing driving circuit has the technical problem of high cost.
Therefore, it is desirable to provide a MOS transistor driving circuit to solve the above-mentioned problems.
Disclosure of Invention
The invention provides an MOS tube driving circuit, which effectively solves the technical problem that the existing driving circuit is high in cost.
The invention provides a MOS tube driving circuit, which comprises:
a power supply for outputting a first voltage;
the first signal generating module is used for generating a first signal;
a chip receiving the first signal, outputting the first driving signal based on the first signal, and outputting the second driving signal based on a driving voltage output by an energy storage module;
the energy storage module receives the first driving signal, receives and stores the first voltage based on the first driving signal, converts the first voltage into a second voltage based on the first driving signal and the second driving signal, and stores the second voltage;
the control module is used for outputting a control signal; and (c) a second step of,
the driving module outputs a third driving signal to the grid electrode of the MOS tube group based on the control signal and the second voltage released by the energy storage module, and the third driving signal is used for controlling the MOS tube group to be switched on and switched off, so that the MOS tube group controls the battery group to output voltage to a load;
the chip comprises an input pin and a low-side output pin, the energy storage module comprises a first MOS (metal oxide semiconductor) tube and a first capacitor, the input pin is connected with the first signal generation module, the input pin is used for receiving the first signal, the low-side output pin is connected with the grid electrode of the first MOS tube, the low-side output pin is used for outputting the first driving signal, the source electrode of the first MOS tube is grounded, the drain electrode of the first MOS tube is connected with the first capacitor, and the first capacitor is connected with a power supply;
when the low-side output pin outputs the first driving signal with high level, the grid electrode of the first MOS tube receives the first driving signal with high level, the first MOS tube is conducted, and therefore the first capacitor receives and stores the first voltage;
the chip comprises a high-side output pin, a high-side floating absolute voltage pin and a high-side floating offset voltage pin, the energy storage module further comprises a second MOS tube and a second capacitor, the source electrode of the second MOS tube is connected with the first capacitor, the drain electrode of the second MOS tube is connected with one end of the second capacitor, the other end of the second capacitor is connected with the first capacitor, the grid electrode of the second MOS tube is connected with the high-side output pin, and the high-side output pin is used for outputting the second driving signal; the high-side floating absolute voltage pin is connected with one end of the first capacitor and used for receiving the driving voltage; the high-side floating offset voltage pin is connected with the other end of the first capacitor and used for isolating the first capacitor from the grid electrode of the second MOS tube;
when the low-side output pin outputs a first drive signal with a low level, the grid electrode of the first MOS tube receives the first drive signal with the low level, and the first MOS tube is cut off;
when the first capacitor outputs the driving voltage, the high-side floating absolute voltage pin receives the driving voltage, the high-side output pin outputs the second driving signal, the second MOS transistor is conducted based on the second driving signal, so that the first capacitor outputs the first voltage, the energy storage module converts the first voltage into a second voltage, and the second capacitor receives and stores the second voltage;
the energy storage module further comprises a first diode and a second diode, wherein the anode of the first diode is connected with a power supply, and the cathode of the first diode is connected with the first capacitor; the anode of the second diode is connected with the first capacitor, and the cathode of the second diode is connected with the second capacitor;
the driving module comprises a first driving unit and a second driving unit, the second driving unit comprises an input end, an output end and a control end, one end of the first driving unit is connected with the control module, the other end of the first driving unit is connected with the control end, the input end is connected with the second capacitor, the output end is connected with the grid electrode of the MOS tube group and used for outputting the third driving signal to the grid electrode of the MOS tube group and carrying out voltage following on the third driving signal based on the control signal and the second voltage released by the second capacitor;
the first driving unit comprises a first optocoupler and a second optocoupler, the second driving unit comprises a first triode, a second triode, a third triode and a fourth triode, the MOS tube group comprises a third MOS tube and a fourth MOS tube, the positive electrode of the input end of the first optocoupler is connected with the control module, the negative electrode of the input end of the first optocoupler is grounded, the collector of the output end of the first optocoupler is connected with the second capacitor, and the emitter of the output end of the first optocoupler is respectively connected with the bases of the first triode and the second triode;
the positive electrode of the input end of the second optocoupler is connected with the control module, the negative electrode of the input end of the second optocoupler is grounded, the collector of the output end of the second optocoupler is connected with the second capacitor, and the emitter of the output end of the second optocoupler is respectively connected with the third triode and the base of the fourth triode;
a collector of the first triode is connected with a second capacitor, an emitter of the first triode is respectively connected with a grid of the third MOS tube and an emitter of the second triode, a collector of the second triode is grounded, a collector of the fourth triode is connected with the second capacitor, an emitter of the fourth triode is connected with a grid of the fourth MOS tube and an emitter of the third triode, and a collector of the third triode is grounded;
the energy storage module comprises a filtering unit, the filtering unit is used for filtering the first voltage, the filtering unit comprises a filtering capacitor, one end of the filtering capacitor is connected between the power supply and the anode of the first diode, and the other end of the filtering capacitor is grounded.
In the MOS transistor driving circuit according to the present invention, the MOS transistor driving circuit includes:
a power supply for outputting a first voltage;
the first signal generating module is used for generating a first signal;
a chip receiving the first signal, outputting the first driving signal based on the first signal, and outputting the second driving signal based on a driving voltage output by an energy storage module;
the energy storage module receives the first driving signal, receives and stores the first voltage based on the first driving signal, converts the first voltage into a second voltage based on the first driving signal and the second driving signal, and stores the second voltage;
the control module is used for outputting a control signal; and the number of the first and second groups,
and the driving module outputs a third driving signal to the grid electrode of the MOS tube group based on the control signal and the second voltage released by the energy storage module, wherein the third driving signal is used for controlling the MOS tube group to be switched on and off, so that the MOS tube group controls the battery pack to output voltage to a load.
In the MOS transistor driving circuit of the present invention, the chip includes an input pin and a low-side output pin, the energy storage module includes a first MOS transistor and a first capacitor, the input pin is connected to the first signal generation module, the input pin is configured to receive the first signal, the low-side output pin is connected to a gate of the first MOS transistor, the low-side output pin is configured to output the first driving signal, a source of the first MOS transistor is grounded, a drain of the first MOS transistor is connected to the first capacitor, and the first capacitor is connected to a power supply.
In the MOS transistor driving circuit according to the present invention, when the low-side output pin outputs the first driving signal with a high level, the gate of the first MOS transistor receives the first driving signal with a high level, and the first MOS transistor is turned on, so that the first capacitor receives and stores the first voltage.
In the MOS transistor driving circuit of the present invention, the chip includes a high-side output pin, a high-side floating absolute voltage pin, and a high-side floating offset voltage pin, the energy storage module further includes a second MOS transistor and a second capacitor, a source of the second MOS transistor is connected to the first capacitor, a drain of the second MOS transistor is connected to one end of the second capacitor, another end of the second capacitor is connected to the first capacitor, a gate of the second MOS transistor is connected to the high-side output pin, and the high-side output pin is configured to output the second driving signal; the high-side floating absolute voltage pin is connected with one end of the first capacitor and used for receiving the driving voltage; the high-side floating offset voltage pin is connected with the other end of the first capacitor and used for isolating the first capacitor from the grid electrode of the second MOS tube.
In the MOS transistor driving circuit according to the present invention, when the low-side output pin outputs a low-level first driving signal, the gate of the first MOS transistor receives the low-level first driving signal, and the first MOS transistor is turned off;
when the first capacitor outputs the driving voltage, the high-side floating absolute voltage pin receives the driving voltage, the high-side output pin outputs the second driving signal, the second MOS transistor is conducted based on the second driving signal, the first capacitor outputs the first voltage, the energy storage module converts the first voltage into the second voltage, and the second capacitor receives and stores the second voltage.
In the MOS transistor driving circuit of the present invention, the energy storage module further includes a first diode and a second diode, an anode of the first diode is connected to the power supply, and a cathode of the first diode is connected to the first capacitor; the anode of the second diode is connected with the first capacitor, and the cathode of the second diode is connected with the second capacitor; the first diode is used for preventing the first capacitor from reversely charging the power supply, and the second diode is used for preventing the second capacitor from reversely charging the first capacitor.
In the MOS transistor driving circuit of the present invention, the driving module includes a first driving unit and a second driving unit, the second driving unit includes an input end, an output end, and a control end, one end of the first driving unit is connected to the control module, the other end of the first driving unit is connected to the control end, the input end is connected to the second capacitor, the output end is connected to the gate of the MOS transistor group and is configured to output the third driving signal to the gate of the MOS transistor group and perform voltage following on the third driving signal based on the control signal and the second voltage released by the second capacitor.
In the MOS transistor driving circuit of the present invention, the first driving unit includes a first optocoupler and a second optocoupler, the second driving unit includes a first transistor, a second transistor, a third transistor, and a fourth transistor, the MOS tube group includes a third MOS tube and a fourth MOS tube, an anode of an input end of the first optocoupler is connected to the control module, a cathode of the input end of the first optocoupler is grounded, a collector of an output end of the first optocoupler is connected to the second capacitor, and an emitter of an output end of the first optocoupler is connected to bases of the first transistor and the second transistor, respectively;
the positive electrode of the input end of the second optocoupler is connected with the control module, the negative electrode of the input end of the second optocoupler is grounded, the collector of the output end of the second optocoupler is connected with the second capacitor, and the emitter of the output end of the second optocoupler is respectively connected with the third triode and the base of the fourth triode;
the collector electrode of the first triode is connected with a second capacitor, the emitter electrode of the first triode is respectively connected with the grid electrode of the third MOS tube and the emitter electrode of the second triode, the collector electrode of the second triode is grounded, the collector electrode of the fourth triode is connected with the second capacitor, the emitter electrode of the fourth triode is connected with the grid electrode of the fourth MOS tube and the emitter electrode of the third triode, and the collector electrode of the third triode is grounded.
In the MOS transistor driving circuit of the present invention, the energy storage module includes a filtering unit, the filtering unit is configured to filter the first voltage, the filtering unit includes a filtering capacitor, one end of the filtering capacitor is connected between the power supply and the anode of the first diode, and the other end of the filtering capacitor is grounded.
Compared with the prior art, the invention has the beneficial effects that: the invention provides a MOS tube driving circuit which comprises an energy storage module, wherein the energy storage module receives and stores a first voltage output by a power supply based on a first driving signal output by a chip. Based on the first driving signal and the second driving signal output by the chip, the energy storage module converts the first voltage into a second voltage, and the energy storage module stores the second voltage. Based on the control signal output by the control module and the second voltage released by the energy storage module, the driving module outputs a third driving signal to the grid of the MOS tube group. The third driving signal can control the MOS tube group to be switched on and switched off, so that the MOS tube group controls the output voltage of the battery pack to be loaded. Because the driving module can output the third driving signal based on the control signal and the second voltage, the third driving signal can control the MOS transistor group to be turned on and off. Therefore, the MOS tube driving circuit does not need to use a special chip to control the high-side MOS tube, so that the cost of the MOS tube driving circuit is lower. The technical problem that the cost of the existing driving circuit is high is effectively solved, the MOS tube driving circuit controls the output voltage of the battery pack through the MOS tube group, and the battery pack is safer to use.
The MOS tube driving circuit uses fewer components and parts and has a simpler control scheme, so the MOS tube driving circuit has the advantages of low cost and simplicity in implementation. Therefore, the positive electrode of the battery pack is completely disconnected, the control of the negative electrode of the battery pack is safer than the control of the negative electrode of the battery pack in the past, and due to the fact that discrete components are used for achieving the control, the selection is more variable, and the control is simple to achieve.
Drawings
Fig. 1 is a block diagram of a MOS transistor driving circuit according to an embodiment of the present invention.
Fig. 2 is a circuit diagram of a MOS transistor driving circuit according to an embodiment of the invention.
In the figure, 10, a MOS tube driving circuit; 11. a power source; 12. a first signal generating module; 13. an energy storage module; 131. a filtering unit; 14. a control module; 15. a drive module; 151. a first drive unit; 152. a second driving unit; 16. MOS tube group.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", "top" and "bottom" are used only with reference to the orientation of the drawings, and the directional terms are used for illustration and understanding of the present invention, and are not intended to limit the present invention.
The terms "first," "second," and the like in the terms of the invention are used for descriptive purposes only and not for purposes of indication or implication relative importance, nor as a limitation on the order of precedence.
Referring to fig. 1 to 2, fig. 1 is a block diagram of a MOS transistor driving circuit according to an embodiment of the invention; fig. 2 is a circuit diagram of a MOS transistor driving circuit according to an embodiment of the invention.
In the drawings, elements having similar structures are denoted by the same reference numerals.
Referring to fig. 1 and fig. 2, the present invention provides a MOS transistor driving circuit 10, and the MOS transistor driving circuit 10 is applied to a battery pack. The MOS tube driving circuit comprises a power supply 11, a first signal generating module 12, a chip U1, an energy storage module 13, a control module 14 and a driving module 15. The power supply 11 is a 12V power supply, and the power supply 11 is configured to output a first voltage.
Referring to fig. 1 and 2, the first signal generating module 12 is used for generating a first signal. The first signal generating module 12 includes a signal generator U2, a first resistor R3, a second resistor R4, a third resistor R5, a fourth resistor R8, a third capacitor C5, and a fourth capacitor C4. The signal generator U2, the first resistor R3, the second resistor R4, the third resistor R5, the fourth resistor R8, and the third capacitor C5 form a square wave generator, so that the duty ratio of the output signal of the first signal generating module 12 is 50%. The positive input end of the signal generator U2 is connected to one end of the first resistor R3, and the other end of the first resistor R3 is grounded. The negative input end of the signal generator U2 is connected with one end of a third capacitor C5, and the other end of the third capacitor C5 is grounded. The V + end of the signal generator U2 is connected with a power supply, and the V-end of the signal generator U2 is grounded. One end of the third resistor R5 is connected with the power supply, and the other end of the third resistor R5 is connected with the first resistor R3. One end of the second resistor R4 is connected with the third resistor R5, and the other end of the second resistor R4 is connected with the output end of the signal generator U2. One end of the fourth capacitor C4 is connected to the power supply, and the other end of the fourth capacitor C4 is grounded.
Referring to fig. 1 and 2, the chip U1 receives a first signal. Based on the first signal, the chip U1 outputs a first driving signal. The chip U1 is a half-bridge driving chip. The energy storage module 13 receives the first driving signal, and based on the first driving signal, the energy storage module 13 receives and stores the first voltage. Based on the first driving signal and the second driving signal, the energy storage module 13 converts the first voltage into a second voltage, and the energy storage module 13 stores the second voltage.
Referring to fig. 1 and 2, the chip U1 includes an input pin in, a low side output pin LO, and the energy storage module 13 includes a first MOS transistor Q1 and a first capacitor C1. An input pin in is connected to the first signal generating module 12, which is connected to an output of the signal generator U2, and is operable to receive the first signal. The low-side output pin LO is connected to the gate of the first MOS transistor Q1, and the low-side output pin LO is configured to output a first driving signal. The source electrode of the first MOS transistor Q1 is grounded, the drain electrode of the first MOS transistor Q1 is connected to the first capacitor C1, and the first capacitor C1 is connected to the power supply 11. The chip U1 further comprises a VCC pin, an SD pin and a GND pin, wherein the VCC pin is connected with the power supply 11, the SD pin is suspended, and the GND pin is grounded.
Referring to fig. 1 and 2, when the low-side output pin LO outputs the first driving signal with a high level, the gate of the first MOS transistor Q1 receives the first driving signal with a high level. The first MOS transistor Q1 is turned on, so that the first capacitor C1 receives and stores the first voltage output by the power supply 11.
Referring to fig. 1 and 2, the chip U1 outputs a second driving signal based on the driving voltage output by the energy storage module 13. The chip U1 further includes a high-side output pin H0, a high-side floating absolute voltage pin VB, and a high-side floating offset voltage pin VS, and the energy storage module 13 further includes a second MOS transistor Q2 and a second capacitor C2. The source electrode of the second MOS tube Q2 is connected with the first capacitor C1, the drain electrode of the second MOS tube Q2 is connected with one end of the second capacitor C2, and the other end of the second capacitor C2 is connected with the first capacitor C1. The gate of the second MOS transistor Q2 is connected to the high-side output pin HO, and the high-side output pin HO is used for outputting a second driving signal. The high-side floating absolute voltage pin VB is connected to one end of the first capacitor C1, and the high-side floating absolute voltage pin VB is used for receiving a driving voltage. The high-side floating offset voltage pin VS is connected to the other end of the first capacitor C1, and the high-side floating offset voltage pin VS can be used for isolating the gates of the first capacitor C1 and the second MOS transistor Q2.
Referring to fig. 1 and 2, when the low-side output pin LO outputs the first driving signal with a low level, the gate of the first MOS transistor Q1 receives the first driving signal with a low level, and the first MOS transistor Q1 is turned off. When the first capacitor C1 outputs the driving voltage, the high side floating absolute voltage pin VB receives the driving voltage, and the high side output pin HO outputs the second driving signal. Based on the second driving signal, the second MOS transistor Q2 is turned on, so that the first capacitor C1 outputs the first voltage. The energy storage module 13 converts the first voltage into a second voltage, so that the second capacitor C2 receives and stores the second voltage.
Referring to fig. 1 and 2, the energy storage module 13 further includes a first diode D1 and a second diode D2. The anode of the first diode D1 is connected to the power source 11, and the cathode of the first diode D1 is connected to the first capacitor C1. The first diode D1 may be used to prevent the first capacitor C1 from reversely charging the power supply, and the first diode D1 may be provided to protect the power supply 11. The positive pole of the second diode D2 is connected with the first capacitor C1, the negative pole of the second diode D2 is connected with the second capacitor C2, the second diode D2 can be used for preventing the second capacitor C2 from reversely charging the first capacitor C1, and the arrangement of the second diode D2 can protect the first capacitor C1. The floating charge pump is composed of a first MOS transistor Q1, a second MOS transistor Q2, a first diode D1, a second diode D2, a first capacitor C1 and a second capacitor C2, and can be used for providing a second voltage for the driving module 15. The driving module 15 outputs a third driving signal based on the second voltage and the control signal output by the control module 14, where the third driving signal is used to control the MOS group 16 to be turned on or off, and the MOS group 16 is a high-side switch of the battery pack.
Referring to fig. 1 and 2, the energy storage module 13 includes a filtering unit 131. The filtering unit 131 may filter the first voltage output by the power supply, and the filtering capacitor C3 is disposed to make the first voltage less susceptible to noise interference. The filter unit comprises a filter capacitor C3, one end of the filter capacitor C3 is connected between the power supply 11 and the anode of the first diode D1, and the other end of the filter capacitor C3 is grounded. The energy storage module 13 further includes a fifth resistor R1 and a sixth resistor R2, and the fifth resistor R1 is connected between the gate and the source of the first MOS transistor Q1. One end of the sixth resistor R2 is connected to the high-side floating offset voltage pin VS, and the other end of the sixth resistor R2 is connected to the source of the second MOS transistor Q2.
Referring to fig. 1 and 2, the control module 14 is configured to output a control signal. The control module 14 includes a first control terminal DSG and a second control terminal CHG, and the first control terminal DSG and the second control terminal CHG can output a control signal. Based on the control signal and the second voltage released by the energy storage module 13, the driving module 15 outputs a third driving signal to the gate of the MOS transistor bank 16. The third driving signal may be used to control the MOS transistor group 16 to turn on and off, so that the MOS transistor group 16 controls the battery group BAT + to output a voltage to the load, and the load receives the voltage through the battery group output terminal BAT + OUT.
Referring to fig. 1 and 2, the driving module 15 includes a first driving unit 151 and a second driving unit 152, and the second driving unit 152 includes an input end, an output end, and a control end. One end of the first driving unit 151 is connected to the control module, the other end of the first driving unit 151 is connected to the control end, the input end of the first driving unit is connected to the second capacitor C2, and the output end of the first driving unit is connected to the gate of the MOS tube set 16. Based on the control signal and the second voltage released by the second capacitor C2, the second driving unit 152 outputs a third driving signal to the gate of the MOS transistor bank 16.
Referring to fig. 1 and 2, the first driving unit 151 includes a first optocoupler OC1 and a second optocoupler OC2, and the second driving unit 152 includes a first transistor Q3, a second transistor Q6, a third transistor Q5, and a fourth transistor Q7. The MOS tube group 16 includes a third MOS tube Q5 and a fourth MOS tube Q4, and the positive electrode of the first optical coupler OC1 input end is connected to the control module 14. The negative pole ground connection of first opto-coupler OC1 input, the second electric capacity C2 is connected to the collecting electrode of first opto-coupler OC1 output, and the base of first triode Q3, second triode Q6 are connected respectively to the projecting pole of first opto-coupler OC1 output. The positive pole of second opto-coupler OC2 input end connects control module 14, and the negative pole of second opto-coupler OC2 input end is ground connection. And a collector at the output end of the second optical coupler OC2 is connected with a second capacitor C2, and an emitter at the output end of the second optical coupler OC2 is respectively connected with bases of a third triode Q8 and a fourth triode Q7. The first optocoupler OC1 can be used for controlling the conduction and the cut-off of the first triode Q3 and the second triode Q6, and the second optocoupler OC2 can be used for controlling the conduction and the cut-off of the third triode Q5 and the fourth triode Q7. Two optocouplers can also be replaced by two special isolation chips, and the isolation chips can also achieve the same effect. A totem pole drive circuit composed of a first triode Q3, a second triode Q6, a third triode Q8 and a fourth triode Q7, so that the second drive unit 15 can carry out voltage following on the third drive signal. The input end of the second driving unit is the collector of the first triode Q3 and the collector of the fourth triode Q7, and the control end of the second driving unit is the base of the first triode Q3, the second triode Q6, the third triode Q8 and the fourth triode Q7. The output terminal of the second driving unit 152 is an emitter of a first transistor Q3 and an emitter of a second transistor Q6, and the output terminal of the second driving unit 152 is also an emitter of a third transistor Q8 and an emitter of a fourth transistor Q7.
Referring to fig. 1 and 2, the driving module 15 includes a seventh resistor and an eighth resistor, one end of the seventh resistor is connected to the collector of the output end of the first optocoupler OC1, and the other end of the seventh resistor is grounded. One end of the eighth resistor is connected with a collector of the output end of the second optical coupler OC2, and the other end of the eighth resistor is grounded. The driving module 15 includes a ninth resistor R6 and a tenth resistor R7, the ninth resistor R6 is connected between the gate and the source of the third MOS transistor, and the tenth resistor R7 is connected between the gate and the source of the fourth MOS transistor.
Referring to fig. 1 and 2, the collector of the first transistor Q3 is connected to the second capacitor C2. The emitting electrode of the first triode Q3 is respectively connected with the grid electrode of the third MOS tube Q5 and the emitting electrode of the second triode Q6, and the collecting electrode of the second triode Q6 is grounded. The collector of the fourth triode Q7 is connected with the second capacitor C2, the emitter of the fourth triode Q7 is connected with the gate of the fourth MOS transistor Q4 and the emitter of the third triode Q8, and the collector of the third triode Q8 is grounded. Optionally, the drain of the third MOS transistor Q5 and the drain of the fourth MOS transistor Q4 may also be connected. If the drain of the third MOS transistor Q5 and the drain of the fourth MOS transistor Q4 can be connected, the MOS transistor driving circuit 10 needs to use two floating charge pumps to output voltage to the driving module 15. Therefore, the driving module 15 outputs a third driving signal, and the third driving signal controls the third MOS transistor Q5 and the fourth MOS transistor Q4 to be turned on and off.
The working principle of the MOS tube driving circuit is as follows: when the MOS transistor driving circuit 10 works, the first signal generating module 12 generates a first signal, and the input pin in of the chip U1 receives the first signal. Based on the first signal, the low side output pin LO of the chip U1 outputs a first driving signal. The gate of the first MOS transistor Q1 of the energy storage module 13 receives the first driving signal, and when the first driving signal is at a high level, the first MOS transistor Q1 is turned on. Meanwhile, the power source 11 outputs a first voltage, which is received and stored by the first capacitor C1 through the first diode D1. Then, when the first driving signal is at a low level, the first MOS transistor Q1 is turned off. The first capacitor C1 outputs a driving voltage, which the high side floating absolute voltage pin VB receives. Based on the driving voltage, the high-side output pin HO of the chip U1 outputs a second driving signal. The gate of the second MOS transistor Q2 receives the second driving signal, so that the second MOS transistor Q2 is turned on. The first capacitor C1 outputs a first voltage, the first voltage is converted into a second voltage through the second MOS transistor Q2 and the second diode D2, and the second capacitor C2 receives and stores the second voltage. When the voltage across the second capacitor C2 is lower than the voltage across the first capacitor C1, the first capacitor C1 continuously outputs a voltage to the second capacitor C2 through the second diode D2. The process is always circulated, the first capacitor C1 continuously supplements the second capacitor C2 with electric energy, and the second capacitor C2 stores the electric energy, so that the output and the ground of the second capacitor C2 are isolated from the power supply 11 and the ground of the power supply 11. Moreover, the high-side floating offset voltage pin VS of the chip U1 may block the gates of the first capacitor C1 and the second MOS transistor Q2.
Subsequently, the first control terminal DSG of the first control module 14 outputs a control signal, and the second control terminal CHG of the first control module 14 outputs a control signal. This control signal is received to first opto-coupler OC1 and second opto-coupler OC2, and when this control signal was the high level, first opto-coupler OC1 and second opto-coupler OC2 all switched on. At this time, the second capacitor C2 discharges the second voltage. This second voltage makes first triode Q3 and second triode Q6 switch on through first opto-coupler OC1, and this second voltage makes third triode Q8 and fourth triode Q7 switch on through second opto-coupler OC 2. Based on the control signal and the second voltage, the control module 15 outputs a third driving signal to the gate of the MOS transistor bank 16. The third driving signal can drive the MOS transistor set 16 to turn on, so that the battery set BAT + can output a voltage to the load.
When the load does not need the power supply of battery pack BAT +, the user can control first control module 14 to output the control signal of low level, first opto-coupler OC1 and second opto-coupler OC2 receive the control signal of this low level, and first opto-coupler OC1 and second opto-coupler OC2 all end. Because the base electrodes of the first triode Q3 and the second triode Q6 are connected with the second capacitor C2 through the first optocoupler OC1, the first triode Q3 and the second triode Q6 cannot be conducted. Because the base electrodes of the third triode Q8 and the fourth triode Q7 are connected with the second capacitor C2 through the second optocoupler OC2, the third triode Q8 and the fourth triode Q7 cannot be conducted. Therefore, the driving module 15 cannot output the third driving signal, so that the MOS transistor set 16 is not turned on, and the battery set BAT + cannot output a voltage to the load.
When the second voltage of the second capacitor C2 is exhausted, because the driving module 15 outputs the third driving signal based on the second voltage and the control signal, the driving module 15 cannot output the third driving signal, so that the MOS transistor set 16 is not turned on, and the battery set BAT + cannot output a voltage to the load. Subsequently, the chip U1 may output a high-level first driving signal to turn on the first MOS transistor Q1, so that the power supply 11 outputs a first voltage to the energy storage module 13. The energy storage module 13 converts the first voltage into a second voltage, and the second capacitor C2 stores the second voltage, and the process is always circulated, so that the battery pack BAT + can intermittently supply power to the load.
The invention provides a MOS tube driving circuit 10, wherein the MOS tube driving circuit 10 comprises an energy storage module 13, and the energy storage module 13 receives and stores a first voltage output by a power supply 11 based on a first driving signal output by a chip U1. Based on the first driving signal and the second driving signal output by the chip U1, the energy storage module 13 converts the first voltage into a second voltage, and the energy storage module 13 stores the second voltage. Based on the control signal output by the control module 14 and the second voltage released by the energy storage module 13, the driving module 15 outputs a third driving signal to the gate of the MOS transistor group 16. The third driving signal can control the MOS transistor set 16 to be turned on and off, so that the MOS transistor set 16 controls the battery set BAT + to output a voltage to the load. Since the driving module 15 can output the third driving signal based on the control signal and the second voltage, the third driving signal can control the MOS transistor group to be turned on and off. Therefore, the MOS transistor driving circuit 10 does not need to use a dedicated chip to control the high-side MOS transistor, so that the cost of the MOS transistor driving circuit 10 is low. The technical problem that the cost of the existing driving circuit is high is effectively solved, and the MOS tube driving circuit 10 controls the output voltage of the battery pack BAT + through the MOS tube group 16, so that the battery pack BAT + is safer to use.
The MOS transistor driving circuit 10 uses fewer components and the control scheme of the MOS transistor driving circuit 10 is simpler, so the MOS transistor driving circuit 10 has the advantages of low cost and simple implementation. Therefore, the positive electrode of the battery pack BAT + is completely disconnected, the battery pack BAT + is safer than the previous control battery pack BAT + negative electrode, and due to the fact that discrete components are used, the selection type is more variable, and the realization is simple.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.

Claims (10)

1. A MOS transistor driving circuit, comprising:
a power supply for outputting a first voltage;
the first signal generating module is used for generating a first signal;
a chip receiving the first signal, outputting a first driving signal based on the first signal, and outputting a second driving signal based on a driving voltage output by an energy storage module;
the energy storage module receives the first driving signal, receives and stores the first voltage based on the first driving signal, converts the first voltage into a second voltage based on the first driving signal and the second driving signal, and stores the second voltage;
the control module is used for outputting a control signal; and the number of the first and second groups,
the driving module outputs a third driving signal to the grid electrode of the MOS tube group based on the control signal and the second voltage released by the energy storage module, and the third driving signal is used for controlling the MOS tube group to be switched on and switched off, so that the MOS tube group controls the battery group to output voltage to a load;
the chip comprises an input pin and a low-side output pin, the energy storage module comprises a first MOS (metal oxide semiconductor) transistor and a first capacitor, the input pin is connected with the first signal generation module, the input pin is used for receiving the first signal, the low-side output pin is connected with the grid electrode of the first MOS transistor, the low-side output pin is used for outputting the first driving signal, the source electrode of the first MOS transistor is grounded, the drain electrode of the first MOS transistor is connected with the first capacitor, and the first capacitor is connected with a power supply;
when the low-side output pin outputs the first driving signal with high level, the grid electrode of the first MOS tube receives the first driving signal with high level, the first MOS tube is conducted, and therefore the first capacitor receives and stores the first voltage;
the chip comprises a high-side output pin, a high-side floating absolute voltage pin and a high-side floating offset voltage pin, the energy storage module further comprises a second MOS tube and a second capacitor, the source electrode of the second MOS tube is connected with the first capacitor, the drain electrode of the second MOS tube is connected with one end of the second capacitor, the other end of the second capacitor is connected with the first capacitor, the grid electrode of the second MOS tube is connected with the high-side output pin, and the high-side output pin is used for outputting the second driving signal; the high-side floating absolute voltage pin is connected with one end of the first capacitor and used for receiving the driving voltage; the high-side floating offset voltage pin is connected with the other end of the first capacitor and used for isolating the first capacitor from the grid electrode of the second MOS transistor;
when the low-side output pin outputs a low-level first driving signal, the grid electrode of the first MOS tube receives the low-level first driving signal, and the first MOS tube is cut off;
when the first capacitor outputs the driving voltage, the high-side floating absolute voltage pin receives the driving voltage, the high-side output pin outputs the second driving signal, the second MOS transistor is conducted based on the second driving signal, so that the first capacitor outputs the first voltage, the energy storage module converts the first voltage into a second voltage, and the second capacitor receives and stores the second voltage;
the energy storage module further comprises a first diode and a second diode, wherein the anode of the first diode is connected with a power supply, and the cathode of the first diode is connected with the first capacitor; the anode of the second diode is connected with the first capacitor, and the cathode of the second diode is connected with the second capacitor;
the driving module comprises a first driving unit and a second driving unit, the second driving unit comprises an input end, an output end and a control end, one end of the first driving unit is connected with the control module, the other end of the first driving unit is connected with the control end, the input end is connected with the second capacitor, the output end is connected with the grid electrode of the MOS tube group and used for outputting the third driving signal to the grid electrode of the MOS tube group and carrying out voltage following on the third driving signal based on the control signal and the second voltage released by the second capacitor;
the first driving unit comprises a first optocoupler and a second optocoupler, the second driving unit comprises a first triode, a second triode, a third triode and a fourth triode, the MOS tube group comprises a third MOS tube and a fourth MOS tube, the positive electrode of the input end of the first optocoupler is connected with the control module, the negative electrode of the input end of the first optocoupler is grounded, the collector of the output end of the first optocoupler is connected with the second capacitor, and the emitter of the output end of the first optocoupler is respectively connected with the bases of the first triode and the second triode;
the positive electrode of the input end of the second optocoupler is connected with the control module, the negative electrode of the input end of the second optocoupler is grounded, the collector of the output end of the second optocoupler is connected with the second capacitor, and the emitter of the output end of the second optocoupler is respectively connected with the bases of the third triode and the fourth triode;
a collector of the first triode is connected with a second capacitor, an emitter of the first triode is respectively connected with a grid electrode of the third MOS tube and an emitter of the second triode, a collector of the second triode is grounded, a collector of the fourth triode is connected with the second capacitor, an emitter of the fourth triode is connected with a grid electrode of the fourth MOS tube and an emitter of the third triode, and a collector of the third triode is grounded;
the energy storage module comprises a filtering unit, the filtering unit is used for filtering the first voltage, the filtering unit comprises a filtering capacitor, one end of the filtering capacitor is connected between the power supply and the anode of the first diode, and the other end of the filtering capacitor is grounded.
2. A MOS transistor driving circuit, comprising:
a power supply for outputting a first voltage;
the first signal generating module is used for generating a first signal;
a chip receiving the first signal, outputting a first driving signal based on the first signal, and outputting a second driving signal based on a driving voltage output by an energy storage module;
the energy storage module receives the first driving signal, receives and stores the first voltage based on the first driving signal, converts the first voltage into a second voltage based on the first driving signal and the second driving signal, and stores the second voltage;
the control module is used for outputting a control signal; and the number of the first and second groups,
and the driving module outputs a third driving signal to the grid electrode of the MOS tube group based on the control signal and the second voltage released by the energy storage module, wherein the third driving signal is used for controlling the MOS tube group to be switched on and off, so that the MOS tube group controls the battery pack to output voltage to a load.
3. The MOS tube driver circuit according to claim 2, wherein the chip comprises an input pin and a low side output pin, the energy storage module comprises a first MOS tube and a first capacitor, the input pin is connected with the first signal generation module, the input pin is used for receiving the first signal, the low side output pin is connected with the gate of the first MOS tube, the low side output pin is used for outputting the first drive signal, the source of the first MOS tube is grounded, the drain of the first MOS tube is connected with the first capacitor, and the first capacitor is connected with a power supply.
4. The MOS transistor driving circuit of claim 3, wherein when the low side output pin outputs the first driving signal with a high level, the gate of the first MOS transistor receives the first driving signal with a high level, and the first MOS transistor is turned on, so that the first capacitor receives and stores the first voltage.
5. The MOS tube driving circuit according to claim 4, wherein the chip comprises a high-side output pin, a high-side floating absolute voltage pin and a high-side floating offset voltage pin, the energy storage module further comprises a second MOS tube and a second capacitor, a source of the second MOS tube is connected to the first capacitor, a drain of the second MOS tube is connected to one end of the second capacitor, the other end of the second capacitor is connected to the first capacitor, a gate of the second MOS tube is connected to the high-side output pin, and the high-side output pin is used for outputting the second driving signal; the high-side floating absolute voltage pin is connected with one end of the first capacitor and used for receiving the driving voltage; the high-side floating offset voltage pin is connected with the other end of the first capacitor and used for isolating the first capacitor from the grid electrode of the second MOS tube.
6. The MOS transistor driving circuit according to claim 5, wherein when the low side output pin outputs a low level first driving signal, the gate of the first MOS transistor receives the low level first driving signal, and the first MOS transistor is turned off;
when the first capacitor outputs the driving voltage, the high-side floating absolute voltage pin receives the driving voltage, the high-side output pin outputs the second driving signal, the second MOS transistor is conducted based on the second driving signal, the first capacitor outputs the first voltage, the energy storage module converts the first voltage into the second voltage, and the second capacitor receives and stores the second voltage.
7. The MOS transistor driving circuit of claim 4, wherein the energy storage module further comprises a first diode and a second diode, wherein the anode of the first diode is connected to the power supply, and the cathode of the first diode is connected to the first capacitor; the anode of the second diode is connected with the first capacitor, and the cathode of the second diode is connected with the second capacitor.
8. The MOS transistor driving circuit of claim 5, wherein the driving module comprises a first driving unit and a second driving unit, the second driving unit comprises an input terminal, an output terminal, and a control terminal, one terminal of the first driving unit is connected to the control module, the other terminal of the first driving unit is connected to the control terminal, the input terminal is connected to the second capacitor, the output terminal is connected to the gate of the MOS transistor group for outputting the third driving signal to the gate of the MOS transistor group and performing voltage following on the third driving signal based on the control signal and the second voltage released by the second capacitor.
9. The MOS tube driving circuit according to claim 8, wherein the first driving unit comprises a first optocoupler and a second optocoupler, the second driving unit comprises a first triode, a second triode, a third triode and a fourth triode, the MOS tube set comprises a third MOS tube and a fourth MOS tube, the positive electrode of the input end of the first optocoupler is connected with the control module, the negative electrode of the input end of the first optocoupler is grounded, the collector of the output end of the first optocoupler is connected with the second capacitor, and the emitter of the output end of the first optocoupler is respectively connected with the bases of the first triode and the second triode;
the positive electrode of the input end of the second optocoupler is connected with the control module, the negative electrode of the input end of the second optocoupler is grounded, the collector of the output end of the second optocoupler is connected with the second capacitor, and the emitter of the output end of the second optocoupler is respectively connected with the bases of the third triode and the fourth triode;
the collector electrode of the first triode is connected with a second capacitor, the emitter electrode of the first triode is respectively connected with the grid electrode of the third MOS tube and the emitter electrode of the second triode, the collector electrode of the second triode is grounded, the collector electrode of the fourth triode is connected with the second capacitor, the emitter electrode of the fourth triode is connected with the grid electrode of the fourth MOS tube and the emitter electrode of the third triode, and the collector electrode of the third triode is grounded.
10. The MOS transistor driving circuit of claim 7, wherein the energy storage module comprises a filtering unit for filtering the first voltage, the filtering unit comprises a filtering capacitor, one end of the filtering capacitor is connected between the power supply and the anode of the first diode, and the other end of the filtering capacitor is grounded.
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