CN114866081B - A drive circuit for driving connect positive NMOS pipe of group battery - Google Patents
A drive circuit for driving connect positive NMOS pipe of group battery Download PDFInfo
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- CN114866081B CN114866081B CN202210589642.4A CN202210589642A CN114866081B CN 114866081 B CN114866081 B CN 114866081B CN 202210589642 A CN202210589642 A CN 202210589642A CN 114866081 B CN114866081 B CN 114866081B
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- 238000004146 energy storage Methods 0.000 claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 22
- 238000010586 diagram Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The invention discloses a driving circuit for driving NMOS tube connected with the positive electrode of a battery pack, comprising: the device comprises a singlechip, a driving module, an energy storage module, an NMOS tube power supply module, a triggering module, an optocoupler driving module and an anode NMOS tube Q2. PWM signals output by the singlechip are driven by the driving module and then input to an input control end of the energy storage module; the energy storage module charges the NMOS tube power supply module; the output control end of the NMOS tube power supply module is connected with the input end of the trigger module, and the output end of the trigger module is connected with a trigger pin Det of the singlechip; the NMOS tube power supply module supplies power for the optocoupler driving module; the singlechip drives the positive NMOS tube Q2 through the optocoupler driving module after receiving the trigger signal of the trigger module. The driving circuit for driving the NMOS tube connected with the positive electrode of the battery pack adopts discrete components to form the driving circuit of the NMOS tube of the positive electrode of the battery pack, and has low realization cost.
Description
Technical Field
The invention relates to the technical field of battery management systems, in particular to a driving circuit for driving an NMOS (N-channel metal oxide semiconductor) tube connected with the anode of a battery pack.
Background
In battery management systems, an NMOS transistor is typically placed at the negative terminal of the battery pack for controlling the output of the negative pole of the battery pack. In the prior art, a PMOS tube can also be used for connecting the dispute end of the battery pack so as to control the positive electrode output of the battery pack. However, the PMOS tube has a large internal resistance, which is not suitable for application in high current situations.
Therefore, in order to cope with high current applications, it is still necessary to select the NMOS transistor to be connected to the positive electrode of the battery. In the prior art, a dedicated chip is required to drive an NMOS transistor connected to the positive electrode of a battery pack. However, the dedicated chip is expensive, resulting in high costs of the battery management system.
Therefore, designing an NMOS transistor for driving the positive electrode of the battery pack with a low-cost driving circuit is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a driving circuit for driving an NMOS tube connected with the anode of a battery pack, which adopts discrete components to form the driving circuit of the NMOS tube of the anode of the battery pack, and has low realization cost.
The aim of the invention is realized by the following technical scheme:
a driving circuit for driving an NMOS transistor connected to a positive electrode of a battery pack, comprising: the device comprises a singlechip, a driving module, an energy storage module, an NMOS tube power supply module, a triggering module, an optocoupler driving module and an anode NMOS tube Q2;
the PWM signal output by the singlechip is driven by the driving module and then is input to the input control end of the energy storage module; the energy storage module charges the NMOS tube power supply module; the output control end of the NMOS tube power supply module is connected with the input end of the trigger module, and the output end of the trigger module is connected with a trigger pin Det of the singlechip; the NMOS tube power supply module supplies power for the optocoupler driving module;
after receiving the trigger signal of the trigger module, the singlechip outputs a conduction signal to the optocoupler driving module so as to conduct the optocoupler driving module; outputting a conduction control signal to the G pole of the positive NMOS tube Q2 when the optocoupler driving module is conducted; the D pole of the positive NMOS tube Q2 is connected with the positive pole of the battery pack, and the S pole of the positive NMOS tube Q2 is the output end.
In one embodiment, the driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack further includes a step-down module; the voltage reducing module reduces the voltage of the battery pack and supplies power for the singlechip.
In one embodiment, the driving module includes: the first resistor R1, the first capacitor C1 and the first zener diode ZD1; one end of the first resistor R1 is connected with a PWM output pin of the singlechip, and the other end of the first resistor R1 is connected with the first capacitor C1 in series and then is connected with the cathode of the first zener diode ZD1; the positive electrode of the first zener diode ZD1 is connected with the negative electrode of the battery pack, and the negative electrode of the first zener diode ZD1 is used as an output end to be connected with the input control end of the energy storage module.
In one embodiment, the energy storage module includes: the second resistor R2, the first NMOS tube Q1 and the inductor L1;
two ends of the second resistor R2 are respectively connected with the G pole and the S pole of the first NMOS tube Q1; the S electrode of the first NMOS tube Q1 is also connected with the negative electrode of the battery pack;
one end of the inductor L1 is connected with the D pole of the first NMOS tube Q1, and the other end of the inductor L1 is connected with the output end of the voltage reduction module.
In one embodiment, the NMOS transistor power module includes: a diode D1 and a second capacitor C2; the anode of the diode D1 is connected with the D pole of the first NMOS tube Q1, and the cathode is connected with the S pole of the anode NMOS tube Q2 after being connected with the second capacitor C2 in series; the node of the negative electrode of the diode D1 and the second capacitor C2 is used as an output control end to be connected with the power input end of the optocoupler driving module, and is also connected with the input end of the triggering module.
In one embodiment, the triggering module includes: the third resistor R3, the fourth resistor R4, the second zener diode ZD2 and the first photoelectric coupler U1;
one end of the third resistor R3 is connected with the output control end of the NMOS tube power supply module, and the other end of the third resistor R3 is connected with the cathode of the second zener diode ZD 2; the positive electrode of the second zener diode ZD2 is connected with the input end of the first photoelectric coupler U1, and the power input end of the first photoelectric coupler U1 is connected with the output end of the voltage reduction module; the output end of the first photoelectric coupler U1 is connected with a trigger pin Det of the singlechip; the output end of the first photoelectric coupler U1 is also connected with a fourth resistor R4 in series and then connected with the negative electrode of the battery pack.
In one embodiment, the optocoupler driving module includes: a fifth resistor R5, a sixth resistor R6 and a second photo coupler U2; one end of the fifth resistor R5 is connected with an output control pin FET of the singlechip, and the other end of the fifth resistor R5 is connected with a control input end of the second photoelectric coupler U2; and the output end of the second photoelectric coupler U2 is connected with a sixth resistor R6 in series and then connected with the G pole of the positive NMOS tube Q2.
In one embodiment, the second photo-coupler U2 is a logic output photo-coupler.
In one embodiment, the second photo-coupler U2 is a TLP5772.
In one embodiment, the output voltage of the step-down module is 5V.
The driving circuit for driving the NMOS tube connected with the anode of the battery pack adopts discrete components to form the driving circuit of the NMOS tube of the anode of the battery pack, thereby greatly reducing the cost of a battery management system.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic block diagram of a driving circuit for driving an NMOS tube connected to a positive electrode of a battery pack according to the present invention;
fig. 2 is a schematic circuit diagram of the driving circuit shown in fig. 1.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
A driving circuit 10 for driving an NMOS transistor connected to a positive electrode of a battery pack, comprising: the device comprises a singlechip 100, a driving module 200, an energy storage module 300, an NMOS tube power supply module 400, a triggering module 500, an optocoupler driving module 600 and a positive NMOS tube Q2.
The PWM signal output by the singlechip 100 is driven by the driving module 200 and then input to the input control end of the energy storage module 300. The energy storage module 300 charges the NMOS transistor power module 400. The output control end of the NMOS tube power supply module 400 is connected with the input end of the trigger module 500, and the output end of the trigger module 500 is connected with a trigger pin Det of the singlechip 100. The NMOS transistor power module 400 supplies power to the optocoupler drive module 600.
After receiving the trigger signal of the trigger module 500, the singlechip 100 outputs a conduction signal to the optocoupler driving module 600 to conduct the optocoupler driving module 600. When the optocoupler driving module 600 is turned on, a turn-on control signal is output to the G electrode of the positive NMOS transistor Q2. The D pole of the positive NMOS transistor Q2 is connected to the positive pole of the battery pack 20, and the S pole of the positive NMOS transistor Q2 is the output terminal.
The driving circuit 10 for driving the NMOS transistor connected to the positive electrode of the battery pack further includes a step-down module 700; the voltage reducing module 700 reduces the voltage of the battery pack 20 and supplies power to the singlechip 100. In this embodiment, the output voltage of the step-down module 700 is 5V. The specific circuit structure of the buck module 700 is conventional, and therefore will not be described herein.
In the present embodiment, the driving module 200 includes: the first resistor R1, the first capacitor C1 and the first zener diode ZD1. One end of the first resistor R1 is connected with a PWM output pin of the singlechip, and the other end of the first resistor R1 is connected with a first capacitor C1 in series and then is connected with the cathode of the first zener diode ZD1. The positive electrode of the first zener diode ZD1 is connected to the negative electrode of the battery pack 20, and the negative electrode of the first zener diode ZD1 is connected as an output end to the input control end of the energy storage module 300.
In this embodiment, the energy storage module 300 includes: the second resistor R2, the first NMOS transistor Q1 and the inductor L1. Two ends of the second resistor R2 are respectively connected with the G pole and the S pole of the first NMOS tube Q1. The S-pole of the first NMOS transistor Q1 is also connected to the negative electrode of the battery pack 20. One end of the inductor L1 is connected with the D pole of the first NMOS tube Q1, and the other end of the inductor L1 is connected with the output end of the voltage dropping module 700.
In this embodiment, the NMOS transistor power module 400 includes: diode D1 and second capacitor C2. The positive pole of the diode D1 is connected with the D pole of the first NMOS tube Q1, and the negative pole is connected with the S pole of the positive NMOS tube Q2 after being connected with the second capacitor C2 in series. The node between the cathode of the diode D1 and the second capacitor C2 is used as an output control terminal to be connected to the power input terminal of the optocoupler driving module 600, and is also connected to the input terminal of the triggering module 500.
In this embodiment, the triggering module 500 includes: the third resistor R3, the fourth resistor R4, the second zener diode ZD2 and the first photoelectric coupler U1. One end of the third resistor R3 is connected with the output control end of the NMOS tube power supply module 400, and the other end of the third resistor R3 is connected with the cathode of the second zener diode ZD 2. The positive pole of the second zener diode ZD2 is connected with the input end of the first photoelectric coupler U1, and the power input end of the first photoelectric coupler U1 is connected with the output end of the voltage reduction module 700. The output end of the first photoelectric coupler U1 is connected with a trigger pin Det of the singlechip 100. The output end of the first photoelectric coupler U1 is also connected in series with a fourth resistor R4 and then connected with the negative electrode of the battery pack 20.
In this embodiment, the optocoupler driving module 600 includes: fifth resistor R5, sixth resistor R6 and second photo coupler U2. One end of the fifth resistor R5 is connected with an output control pin FET of the singlechip 100, and the other end is connected with a control input end of the second photoelectric coupler U2. The output end of the second photoelectric coupler U2 is connected with a sixth resistor R6 in series and then connected with the G pole of the positive NMOS tube Q2.
As a preferred embodiment, the second photo-coupler U2 is a logic output photo-coupler. In this embodiment, the second photo-coupler U2 is a TLP5772.
The operation principle of the driving circuit 10 of the present invention will be described below:
the voltage of the battery pack 20 is reduced by the voltage reducing module 700 to obtain 5V voltage, and the 5V voltage output by the voltage reducing module 700 respectively supplies power to the singlechip 100 of the whole battery management system and to the first photoelectric coupler U1, and is also output to the inductor L1 to supply electric energy for energy storage of the inductor L1;
the singlechip 100 outputs a PWM waveform through a PWM output pin; when the PWM waveform is at a high level, the high level of the PWM waveform is input to the G pole of the first NMOS tube Q1 after passing through the first resistor R1 and the first capacitor C1; at this time, the first voltage stabilizing resistor ZD1 stabilizes the PWM waveform, so as to ensure that the G pole of the first NMOS transistor Q1 receives a stable high level; that is, when the PWM waveform is at a high level, the first NMOS transistor Q1 is turned on, and the inductor L1 starts to store energy;
when the PWM waveform is at a low level, the first resistor R1, the first capacitor C1 and the first voltage stabilizing resistor ZD1 form a release loop; at this time, the G of the first NMOS transistor Q1 is very low; that is, when the PWM waveform is at a low level, the first NMOS transistor Q1 is turned off; at this time, the electric energy stored in the inductor L1 continuously charges the second capacitor C2 through the diode D1;
as the second capacitor C2 is continuously charged, the voltage of the cathode of the diode D1 is continuously increased; when the voltage of the cathode of the diode D1 reaches the breakdown voltage of the second zener diode ZD2, the second zener diode ZD2 is broken down; at this time, the first photo coupler U1 is turned on, so that the first photo coupler U1 outputs a high-level trigger signal to the trigger pin Det of the singlechip 100; after the singlechip 100 detects that the trigger pin Det receives the high-level trigger signal, stopping outputting the PWM waveform, and at the moment, the voltage of the second capacitor C2 is not increased any more;
when the voltage of the second capacitor C2 stops rising, the voltage on the second capacitor C2 supplies power to the second photoelectric coupler U2; meanwhile, the singlechip 100 outputs a control signal from the output control pin FET to the control input end of the second photocoupler U2;
when the output control pin FET of the singlechip 100 outputs a high level, the second photoelectric coupler U2 is conducted; at this time, the second photo coupler U2 outputs a high level to the G pole of the positive NMOS transistor Q2, thereby turning on the positive NMOS transistor Q2;
when the output control pin FET of the singlechip 100 outputs a low level, the second photoelectric coupler U2 is cut off; at this time, the second photo coupler U2 outputs a low level to the G pole of the positive NMOS transistor Q2, thereby turning off the positive NMOS transistor Q2.
The driving circuit 10 for driving the NMOS tube connected with the anode of the battery pack forms the driving circuit 10 through discrete components so as to drive the NMOS tube connected with the anode of the battery pack 20, thereby greatly reducing the cost of the battery management system.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (4)
1. A driving circuit for driving an NMOS transistor connected to a positive electrode of a battery pack, comprising: the device comprises a singlechip, a driving module, an energy storage module, an NMOS tube power supply module, a triggering module, an optocoupler driving module, an anode NMOS tube Q2 and a voltage reduction module;
the PWM signal output by the singlechip is driven by the driving module and then is input to the input control end of the energy storage module; the energy storage module charges the NMOS tube power supply module; the output control end of the NMOS tube power supply module is connected with the input end of the trigger module, and the output end of the trigger module is connected with a trigger pin Det of the singlechip; the NMOS tube power supply module supplies power for the optocoupler driving module;
after receiving the trigger signal of the trigger module, the singlechip outputs a conduction signal to the optocoupler driving module so as to conduct the optocoupler driving module; outputting a conduction control signal to the G pole of the positive NMOS tube Q2 when the optocoupler driving module is conducted; the D pole of the positive NMOS tube Q2 is connected with the positive pole of the battery pack, and the S pole of the positive NMOS tube Q2 is an output end;
the voltage reducing module reduces the voltage of the battery pack and supplies power to the singlechip;
the driving module includes: the first resistor R1, the first capacitor C1 and the first zener diode ZD1; one end of the first resistor R1 is connected with a PWM output pin of the singlechip, and the other end of the first resistor R1 is connected with the first capacitor C1 in series and then is connected with the cathode of the first zener diode ZD1; the anode of the first zener diode ZD1 is connected with the cathode of the battery pack, and the cathode of the first zener diode ZD1 is used as an output end to be connected with the input control end of the energy storage module;
the energy storage module includes: the second resistor R2, the first NMOS tube Q1 and the inductor L1;
two ends of the second resistor R2 are respectively connected with the G pole and the S pole of the first NMOS tube Q1; the S electrode of the first NMOS tube Q1 is also connected with the negative electrode of the battery pack;
one end of the inductor L1 is connected with the D pole of the first NMOS tube Q1, and the other end of the inductor L1 is connected with the output end of the voltage reduction module;
the NMOS tube power supply module comprises: a diode D1 and a second capacitor C2; the anode of the diode D1 is connected with the D pole of the first NMOS tube Q1, and the cathode is connected with the S pole of the anode NMOS tube Q2 after being connected with the second capacitor C2 in series; the node of the negative electrode of the diode D1 and the second capacitor C2 is used as an output control end to be connected with the power input end of the optocoupler driving module and is also connected with the input end of the triggering module;
the triggering module comprises: the third resistor R3, the fourth resistor R4, the second zener diode ZD2 and the first photoelectric coupler U1;
one end of the third resistor R3 is connected with the output control end of the NMOS tube power supply module, and the other end of the third resistor R3 is connected with the cathode of the second zener diode ZD 2; the positive electrode of the second zener diode ZD2 is connected with the input end of the first photoelectric coupler U1, and the power input end of the first photoelectric coupler U1 is connected with the output end of the voltage reduction module; the output end of the first photoelectric coupler U1 is connected with a trigger pin Det of the singlechip; the output end of the first photoelectric coupler U1 is also connected with a fourth resistor R4 in series and then connected with the negative electrode of the battery pack;
the optocoupler driving module includes: a fifth resistor R5, a sixth resistor R6 and a second photo coupler U2; one end of the fifth resistor R5 is connected with an output control pin FET of the singlechip, and the other end of the fifth resistor R5 is connected with a control input end of the second photoelectric coupler U2; and the output end of the second photoelectric coupler U2 is connected with a sixth resistor R6 in series and then connected with the G pole of the positive NMOS tube Q2.
2. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 1, wherein the second photo coupler U2 is a logic output photo coupler.
3. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 2, wherein the second photo coupler U2 is TLP5772.
4. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 1, wherein the output voltage of the step-down module is 5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210589642.4A CN114866081B (en) | 2022-05-26 | 2022-05-26 | A drive circuit for driving connect positive NMOS pipe of group battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210589642.4A CN114866081B (en) | 2022-05-26 | 2022-05-26 | A drive circuit for driving connect positive NMOS pipe of group battery |
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| CN114866081A CN114866081A (en) | 2022-08-05 |
| CN114866081B true CN114866081B (en) | 2024-04-05 |
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| CN114866081A (en) | 2022-08-05 |
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