CN109450232A - The driving circuit of high-order metal-oxide-semiconductor - Google Patents
The driving circuit of high-order metal-oxide-semiconductor Download PDFInfo
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- CN109450232A CN109450232A CN201811429717.2A CN201811429717A CN109450232A CN 109450232 A CN109450232 A CN 109450232A CN 201811429717 A CN201811429717 A CN 201811429717A CN 109450232 A CN109450232 A CN 109450232A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 230000008878 coupling Effects 0.000 claims abstract description 33
- 238000010168 coupling process Methods 0.000 claims abstract description 33
- 238000005859 coupling reaction Methods 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 238000002955 isolation Methods 0.000 claims abstract description 30
- 239000003990 capacitor Substances 0.000 claims description 66
- 230000005611 electricity Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 4
- 230000005622 photoelectricity Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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Abstract
The invention discloses a kind of driving circuits of high-order metal-oxide-semiconductor, including sequentially connected input circuit, optical coupling isolation circuit and driving circuit；The voltage input end of the voltage input end of the input circuit and the driving circuit is all connected with power supply；The input circuit is used to provide supply voltage for the optical coupling isolation circuit, and driving signal is transmitted to the optical coupling isolation circuit；The optical coupling isolation circuit includes photoelectrical coupler, for realizing the on-off of the photoelectrical coupler according to the driving signal height；The driving circuit is used to realize the driving to high-order metal-oxide-semiconductor according to the on-off of the photoelectrical coupler.The on-off of photoelectrical coupler is realized by the height of driving signal, circuit is isolated using the photoelectrical coupler, so that the reference voltage of the grid voltage of the high position metal-oxide-semiconductor is independent of " ground ", and then the driving circuit can realize the driving to high-order metal-oxide-semiconductor according to the on-off of the photoelectrical coupler.
Description
Technical field
The present invention relates to driving circuit technical field more particularly to a kind of driving circuits of high-order metal-oxide-semiconductor.
Background technique
High-order metal-oxide-semiconductor refers to metal-oxide-semiconductor connection in circuit, and the source electrode of metal-oxide-semiconductor is not directly grounded.It is exemplary referring to Fig. 1
, it is connected in BUCK circuit and is illustrated with high-order metal-oxide-semiconductor, main metal-oxide-semiconductor is high-order metal-oxide-semiconductor in BUCK circuit, the main MOS
The source electrode of pipe M1 is not directly grounded, and source electrode has been separately connected the cathode of diode and one end of inductance, when the main metal-oxide-semiconductor M1 is led
When logical, if metal-oxide-semiconductor is directly grounded, the voltage of source electrode point will be pulled low, but the source electrode of high-order metal-oxide-semiconductor does not connect directly
Ground, then its source electrode point voltage will be raised in the identical voltage of draining, at this time if grid voltage is not high enough or not
It can be followed by the raising of source electrode point voltage change, then may cause conduction voltage drop and not enough close the main metal-oxide-semiconductor M1, so needing
One drives the driving circuit of high-order metal-oxide-semiconductor.
In the prior art, driving, referring to figs. 2 and 3, inventor are realized using booster+bootstrap capacitor+driving circuit
When realizing the embodiment of the present invention, the discovery prior art is had the following defects, and required component is more, and circuit structure is complicated,
It is at high cost, so needing a kind of novel high-order metal-oxide-semiconductor driving circuit.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of driving circuit of high-order metal-oxide-semiconductor, be able to achieve to a high position
The driving of metal-oxide-semiconductor, circuit structure is simple, at low cost.
In order to solve the above-mentioned technical problem, the invention proposes a kind of driving circuits of high-order metal-oxide-semiconductor, including are sequentially connected
Input circuit, optical coupling isolation circuit and driving circuit；
The voltage input end of the voltage input end of the input circuit and the driving circuit is all connected with power supply；
The input circuit is used to provide supply voltage for the optical coupling isolation circuit, and described in driving signal is transmitted to
Optical coupling isolation circuit；
The optical coupling isolation circuit includes photoelectrical coupler, for realizing the photoelectricity coupling according to the driving signal height
The on-off of clutch；
The driving circuit is used to realize the driving to high-order metal-oxide-semiconductor according to the on-off of the photoelectrical coupler.
Preferably, the anode of the luminescent device of the photoelectrical coupler is connect with the voltage output end of the input circuit,
The cathode of the luminescent device is connect with the driving signal output end of the input circuit, the optical receiver of the photoelectrical coupler
The collector of part is connect with the first output end of the driving circuit, the emitter of the light receiving element and the driving circuit
Second output terminal connection；Wherein, the first output end of the driving circuit is used to connect the drain electrode of the high-order metal-oxide-semiconductor, institute
The second output terminal for stating driving circuit is used to connect the source electrode of the high-order metal-oxide-semiconductor.
Preferably, the driving circuit includes first resistor, second resistance, first capacitor, the second capacitor and the one or two pole
Pipe；
The anode of the first diode connects the power supply, and the cathode of the first diode is separately connected described
One end of one end of first resistor and the first capacitor；
One end of second capacitor is separately connected the collector of the other end of the first resistor, the light receiving element
And one end of the second resistance, the other end of second capacitor are separately connected the other end of the first capacitor, described
The emitter of two output ends and the light receiving element；
The other end of the second resistance connects first output end.
Preferably, the input circuit includes 3rd resistor；
One end of the 3rd resistor connects the voltage input end of the input circuit, and the other end of the 3rd resistor connects
Connect the voltage output end of the input circuit.
Preferably, the input circuit further includes the 4th resistance；
One end of 4th resistance connects the driving signal output end, the other end ground connection of the 4th resistance.
Preferably, the input circuit further includes the 5th resistance, the 6th resistance, the 7th resistance and switching tube；
The input terminal of the switching tube is separately connected one end of the 5th resistance and one end of the 6th resistance, described
The control terminal of switching tube is separately connected one end of the 7th resistance and the driving signal input of the input circuit, described to open
Close the output end ground connection of pipe；
The other end of 5th resistance is separately connected the voltage output end of power supply and the input circuit；
The other end of 6th resistance connects the driving signal output end of the input circuit；
The other end of 7th resistance is grounded.
Preferably, the photoelectrical coupler further includes the 5th pin, and the 5th pin is connected to the first resistor
Between one end and the cathode of the first diode.
Preferably, the optical coupling isolation circuit further includes the second diode and third capacitor；
The photoelectrical coupler further includes the 5th pin；
The anode of second diode connects the anode of the first diode, the cathode difference of second diode
Connect one end of the 5th pin and the third capacitor；
The other end of the third capacitor connects the emitter of the light receiving element.
Preferably, the switching tube is N-channel MOS pipe；Wherein, the control terminal of the switching tube is the grid of N-type metal-oxide-semiconductor
Pole, the input terminal of the switching tube are the drain electrode of N-type metal-oxide-semiconductor, and the output end of the switching tube is the source electrode of N-type metal-oxide-semiconductor.
The invention has the following beneficial effects:
A kind of driving circuit of high position metal-oxide-semiconductor, including sequentially connected input circuit, optical coupling isolation circuit and driving electricity
Road；The voltage input end of the voltage input end of the input circuit and the driving circuit is all connected with power supply；The input
Circuit is used to provide supply voltage for the optical coupling isolation circuit, and driving signal is transmitted to the optical coupling isolation circuit；Institute
Stating optical coupling isolation circuit includes photoelectrical coupler, for realizing the logical of the photoelectrical coupler according to the driving signal height
It is disconnected；The driving circuit is used to realize the driving to high-order metal-oxide-semiconductor according to the on-off of the photoelectrical coupler.Pass through driving signal
Height realize photoelectrical coupler on-off, circuit is isolated using the photoelectrical coupler, so that the high position MOS
The reference voltage of the grid voltage of pipe is independent of " ground ", and then the driving circuit can be according to the on-off of the photoelectrical coupler
Realize the driving to high-order metal-oxide-semiconductor.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of high-order metal-oxide-semiconductor in BUCK circuit provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the driving circuit of prior art high position metal-oxide-semiconductor provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the driving circuit of another high-order metal-oxide-semiconductor of the prior art provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of the driving circuit for high-order metal-oxide-semiconductor that the embodiment of the present invention one provides；
Fig. 5 is the structural schematic diagram of the driving circuit for the high-order metal-oxide-semiconductor of another kind that the embodiment of the present invention one provides；
Fig. 6 is a kind of structural schematic diagram of the driving circuit of high-order metal-oxide-semiconductor provided by Embodiment 2 of the present invention；
Fig. 7 is a kind of structural schematic diagram of the driving circuit for high-order metal-oxide-semiconductor that the embodiment of the present invention three provides；
Fig. 8 is a kind of structural schematic diagram of the driving circuit for high-order metal-oxide-semiconductor that the embodiment of the present invention four provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment one
Referring to fig. 4, a kind of structural schematic diagram of the driving circuit for high-order metal-oxide-semiconductor that the embodiment of the present invention one provides.
A kind of driving circuit 03 of high position metal-oxide-semiconductor M1, including sequentially connected input circuit 01,02 and of optical coupling isolation circuit
Driving circuit 03；
The voltage input end of the input circuit 01 and the voltage input end of the driving circuit 03 are all connected with power supply
04；
The input circuit 01 is used to provide supply voltage for the optical coupling isolation circuit 02, and driving signal is transmitted to
The optical coupling isolation circuit 02；
The optical coupling isolation circuit 02 includes photoelectrical coupler OC1, for according to the driving signal height realization
The on-off of photoelectrical coupler OC1；
The driving circuit 03 is used to realize the driving to high-order metal-oxide-semiconductor M1 according to the on-off of the photoelectrical coupler OC1.
Preferably, the voltage output end of the anode and the input circuit 01 of the luminescent device of the photoelectrical coupler OC1
Connection, the cathode of the luminescent device are connect with the driving signal output end of the input circuit 01, the photoelectrical coupler OC1
The collector of light receiving element connect with the first output end of the driving circuit 03, the emitter of the light receiving element with
The second output terminal of the driving circuit 03 connects；Wherein, the first output end of the driving circuit 03 is for connecting the height
The drain electrode of position metal-oxide-semiconductor M1, the second output terminal of the driving circuit 03 are used to connect the source electrode of the high-order metal-oxide-semiconductor M1.
Preferably, the driving circuit 03 includes first resistor R1, second resistance R2, first capacitor C1, the second capacitor C2
With first diode D1；
The anode of the first diode D1 connects the power supply 04, and the cathode of the first diode D1 connects respectively
Connect one end of the first resistor R1 and one end of the first capacitor C1；
One end of the second capacitor C2 is separately connected the collection of the other end of the first resistor R1, the light receiving element
The other end of one end of electrode and the second resistance R2, the second capacitor C2 is separately connected the another of the first capacitor C1
The emitter at end, the second output terminal and the light receiving element；
The other end of the second resistance R2 connects first output end.
Preferably, the input circuit 01 includes 3rd resistor R3；
One end of the 3rd resistor R3 connects the voltage input end of the input circuit 01, and the 3rd resistor R3's is another
One end connects the voltage output end of the input circuit 01.
Preferably, the input circuit 01 further includes the 4th resistance R4；
One end of the 4th resistance R4 connects the driving signal output end, another termination of the 4th resistance R4
Ground.
In this bright embodiment, the photoelectrical coupler OC1 is common optical coupler, can be using in the optocoupler of following model
Any one: TLP521-1, TLP521-2, TLP521-4,4N25,4N35 and 6N136.
In embodiments of the present invention, the first resistor R1 is current-limiting resistance, when for discharging for the first capacitor C1
Current limliting is carried out, the first capacitor C1 is prevented directly to be shorted；The second resistance R2 is current-limiting resistance, described it acts as preventing
The driving current of high-order metal-oxide-semiconductor M1 is excessive to burn out the high-order metal-oxide-semiconductor M1；The first capacitor C1 is for bootstrap capacitor, work
With equivalent voltage source, for driving the load of the rear end high-order metal-oxide-semiconductor M1；The second capacitor C2 is filter capacitor, is made
With to filter out the high fdrequency component in the high-order metal-oxide-semiconductor M1 driving voltage；The 3rd resistor R3 is current-limiting resistance；Described 4th
Resistance R4 is the pull down resistor of driving signal PWM waveform, it acts as when not providing driving signal PWM, gives the photoelectricity
One determining low level of cathode of the luminescent device of coupler OC1, then the photoelectrical coupler OC1 is not turned on；Described
One diode D1 is general-purpose diode, and it acts as the cathode terminal potentials of the first diode D1 to be higher than the power supply 04
When voltage, using the reversed cut-off property of diode, to maintain the current potential of the cathode terminal of the first diode D1.
Illustratively, it is illustrated with the high position metal-oxide-semiconductor M1 for the main metal-oxide-semiconductor in Buck circuit, it is described referring to Fig. 5
Driving circuit 03 includes first resistor R1, second resistance R2, first capacitor C1, the second capacitor C2 and first diode D1；It is described
Input circuit 01 includes 3rd resistor R3 and the 4th resistance R4；The optical coupling isolation circuit 02 includes photoelectrical coupler OC1.It is described
Photoelectrical coupler OC1 is 4 footlights couplings, the anode of the luminescent device of the photoelectrical coupler OC1 by the 3rd resistor R3 and
The power supply 04 connects, the cathode of the luminescent device be separately connected the input circuit 01 driving signal output end and
One end of the 4th resistance R4, driving signal PWM are transmitted to the cathode of the luminescent device of the photoelectrical coupler OC1, control
The collector of the on-off of the photoelectrical coupler OC1, the light receiving element of the photoelectrical coupler OC1 passes through the first resistor
R1 connects the cathode of the first diode D1, and the collector of the light receiving element passes through described in the second resistance R2 connection
The grid of high-order metal-oxide-semiconductor M1 connects, and the collector of the light receiving element passes through the second capacitor C2 connection light-receiving
The emitter of device；The emitter of the light receiving element connects the source electrode of the high-order metal-oxide-semiconductor M1, and the first capacitor C1 connects
It connects between the cathode of the first diode D1 and the emitter of the light receiving element, the anode of the first diode D1
The power supply 04 is connected, for providing supply voltage for the driving circuit 03；Wherein, the driving circuit 03 is by powering
Power supply 04VCC power supply, the driving signal of input are PWM waveform, and the first output end of the driving circuit 03 is " Mg ", the drive
The second output terminal of dynamic circuit 03 is " Ms ", wherein high-order metal-oxide-semiconductor M1 in first output end " Mg " and rear class Buck circuit
Grid is connected, and the second output terminal " Ms " is connected with metal-oxide-semiconductor M1 source electrode high-order in rear class Buck circuit.
The working principle of the circuit in Fig. 5 is illustrated below:
When the driving signal PWM is low level, the luminescent device conducting of the photoelectrical coupler OC1, so as to cause
The light receiving element of the photoelectrical coupler OC1 is connected；The first capacitor C1 is a bulky capacitor, is equivalent to a voltage
Source, value are generally uF rank；On the one hand the first capacitor C1 passes through the first resistor R1, the photoelectrical coupler
The emitter and collector of the light receiving element of OC1 discharges, and the second capacitor C2 is filter capacitor, and capacitance is smaller general
For PF rank, not as the discharge loop path of the first capacitor C1, as long as the voltage of the first capacitor C1 is lower than described
04 voltage VCC of power supply, the first diode D1 conducting, the 04 voltage VCC of power supply is just to the first capacitor
C1 charges, the voltage V of the first capacitor C1C1Always it is approximately equal to VCC, not shadow whether the conducting of the first diode D1
The shutdown of the high position metal-oxide-semiconductor M1 described in rear class is rung, the clamping action of the first diode D1 is mainly reflected in the conducting of metal-oxide-semiconductor
In the stage, can be seen that common photoelectrical coupler OC1 from the internal structure of the photoelectrical coupler OC1 is passive device, power supply
Its acting body is now turned on and is turned off the luminescent device of the photoelectrical coupler OC1；On the other hand due to second resistance R2
Its resistance value value is smaller, generally ohm rank, so the collector of the photoelectrical coupler OC1 and the high-order metal-oxide-semiconductor M1
Grid can be equivalent to be directly connected to, the emitter of the photoelectrical coupler OC1 is connected with the source electrode of the high-order metal-oxide-semiconductor M1,
So the voltage between the collector and emitter of the photoelectrical coupler OC1 light receiving element is approximately equal to the high position at this time
Voltage between metal-oxide-semiconductor M1 grid and source electrode, since the light receiving element is connected, the collector and hair of the light receiving element
Pressure difference is 0 between emitter-base bandgap grading, so the high position metal-oxide-semiconductor M1 can not be connected.
When the driving signal PWM is high level, the luminescent device of the photoelectrical coupler OC1 is disconnected, so as to cause
The light receiving element of the photoelectrical coupler OC1 disconnects；The first capacitor C1 is a bulky capacitor, is equivalent to a voltage
Source, value are generally uF rank, at this time due to the emitter of the light receiving element of the photoelectrical coupler OC1 and collector it
Separated, the first capacitor C1 can not be discharged by the photoelectrical coupler OC1, and the voltage of the first capacitor C1 is logical
Cross the grid that the first resistor R1, second resistance R2, the first output end Mg, second output terminal Ms are added in the high-order metal-oxide-semiconductor M1
On pole and source electrode, to drive the high-order metal-oxide-semiconductor M1, so that the high position metal-oxide-semiconductor M1 is connected, the high position metal-oxide-semiconductor M1 is
Voltage driven type flows through the general very little of electric current between the grid and source electrode of the high-order metal-oxide-semiconductor M1, is nA rank, so the
Voltage on one capacitor C1 will not be discharged rapidly, i.e., during photoelectrical coupler OC1 conducting, on the first capacitor C1
Voltage hardly reduce；When high position metal-oxide-semiconductor M1 conducting, between the drain electrode and source electrode of the high position metal-oxide-semiconductor M1
The pressure difference of pressure difference very little, the ideal high-order metal-oxide-semiconductor M1 is 0, and the drain electrode and the input of Buck circuit of the high-order metal-oxide-semiconductor M1
Power supply VPOWERConnection, so the high-order metal-oxide-semiconductor M1 source potential described at this time is equal to drain potential and is equal to VPOWER；Further, institute
State that first capacitor C1 is same as the connected current potential of the high-order metal-oxide-semiconductor M1 source electrode to be lifted to VPOWER, and at this time due to photoelectricity coupling
Clutch OC1 is still off, and the electric current of the high-order metal-oxide-semiconductor M1 grid and source electrode also very little, so first capacitor C1 begins
There is no discharge path eventually, i.e., can not discharge；Further, the voltage difference at the both ends of first capacitor C1 does not change, and with it is described
The current potential of one end of high-order metal-oxide-semiconductor M1 source electrode connection is lifted to VPOWER, so the first capacitor C1 and first diode D1
The current potential for connecting one end is then VPOWER+VC1；Further, when photoelectrical coupler OC1 is connected, the voltage V of first capacitor C1C1
It is approximately equal to VCC, when its shutdown of the photoelectrical coupler OC1, the first capacitor C1VC1There is no discharge loop, so pressure difference will not
Change, so VPOWER+VC2=VPOWER+ VCC > VCC, the first diode D1 cut-off, first capacitor C1 are not put still at this time
Electrical circuit, so voltage difference will not still change, so as to remain high always during the high position metal-oxide-semiconductor M1 is entirely connected
The level driving high-order metal-oxide-semiconductor M1, maintains the high position metal-oxide-semiconductor M1 conducting.
The invention has the following beneficial effects:
A kind of driving circuit 03 of high position metal-oxide-semiconductor M1, including sequentially connected input circuit 01,02 and of optical coupling isolation circuit
Driving circuit 03；The voltage input end of the input circuit 01 and the voltage input end of the driving circuit 03 are all connected with power supply electricity
Source 04；The input circuit 01 is used to provide supply voltage for the optical coupling isolation circuit 02, and driving signal is transmitted to institute
State optical coupling isolation circuit 02；The optical coupling isolation circuit 02 includes photoelectrical coupler OC1, for according to the driving signal height
Realize the on-off of the photoelectrical coupler OC1；The driving circuit 03 is used to be realized according to the on-off of the photoelectrical coupler OC1
Driving to high-order metal-oxide-semiconductor M1.The on-off that photoelectrical coupler OC1 is realized by the height of driving signal, utilizes the photoelectricity coupling
Circuit is isolated in clutch OC1, so that the reference voltage of the grid voltage of the high position metal-oxide-semiconductor M1 is independent of " ground ",
And then the driving circuit 03 can realize the driving to high-order metal-oxide-semiconductor M1 according to the on-off of the photoelectrical coupler OC1.
Embodiment two
Referring to Fig. 6, the input circuit 01 in embodiment one is further optimized.
Preferably, the input circuit 01 further includes the 5th resistance R5, the 6th resistance R6, the 7th resistance R7 and switching tube
M2；
The input terminal of the switching tube M2 be separately connected the 5th resistance R5 one end and the 6th resistance R6 one
End, the control terminal of the switching tube M2 are separately connected one end of the 7th resistance R7 and the driving signal of the input circuit 01
Input terminal, the output end ground connection of the switching tube M2；
The other end of the 5th resistance R5 is separately connected the voltage output end of power supply 04 and the input circuit 01；
The other end of the 6th resistance R6 connects the driving signal output end of the input circuit 01；
The other end of the 7th resistance R7 is grounded.
Preferably, the switching tube M2 is N-channel MOS pipe；Wherein, the control terminal of the switching tube M2 is N-type metal-oxide-semiconductor
Grid, the input terminal of the switching tube M2 are the drain electrode of N-type metal-oxide-semiconductor, and the output end of the switching tube M2 is the source of N-type metal-oxide-semiconductor
Pole.
It should be noted that the switching tube M2 is only described by taking N-type metal-oxide-semiconductor as an example, may be replaced by triode,
The three ports for control such as field-effect tube, IGBT, thyristor device or its derivation device.
In embodiments of the present invention, increase a switching tube M2 in the input circuit 01 to switch, to enhance circuit
Reliability and applicability.
The places different from embodiment one are, in the input circuit 01, including the 5th resistance R5, the 6th resistance R6,
The input terminal of 7th resistance R7 and switching tube M2, the switching tube M2 pass through the 5th resistance R5 connection power supply
04, and the input terminal of the switching tube M2 connects the cathode of the photoelectrical coupler OC1 by the 6th resistance R6；It is described to open
Close pipe M2 control terminal connect the 7th resistance R7 one end and the driving signal input, the output of the switching tube M2
End ground connection, the anode of the photoelectrical coupler OC1 connect the other end and the power supply 04 of the 5th resistance R5.
Implement the present embodiment to have the following beneficial effects:
A reversed driving signal PWM waveform is provided, for increasing the applicability of circuit；As the driving signal PWM
When for high level, the photoelectrical coupler OC1 conducting, the high position metal-oxide-semiconductor M1 shutdown, the driving signal PWM is low level
When, the photoelectrical coupler OC1 shutdown, the high position metal-oxide-semiconductor M1 conducting.
Embodiment three
Referring to Fig. 7, the optical coupling isolation circuit 02 is further optimized on the basis of example 2.
Preferably, the photoelectrical coupler OC1 further includes the 5th pin, and the 5th pin is connected to the first resistor
Between one end of R1 and the cathode of the first diode D1.
It is that the different place of embodiment two is, the photoelectrical coupler OC1 of 4 feet is changed into the photoelectrical coupler of 5 feet
OC1,5 footlights electric coupler OC1 are active device, and inside increases an amplifier, compared to 4 footlights electric coupler OC1,5 feet
Photoelectrical coupler OC1 has higher cutoff frequency.
Example IV
Referring to Fig. 8, on the basis of embodiment three, the optical coupling isolation circuit 02 is further optimized.
Preferably, the optical coupling isolation circuit 02 further includes the second diode D2 and third capacitor C3；
The photoelectrical coupler OC1 further includes the 5th pin；
The anode of the second diode D2 connects the anode of the first diode D1, and the second diode D2's is negative
Pole is separately connected one end of the 5th pin and the third capacitor C3；
The other end of the third capacitor C3 connects the emitter of the light receiving element.
The places different from embodiment three are: individually being powered to 5 footlights electric coupler OC1；In the third embodiment,
When being connected between its collector and emitter of the photoelectrical coupler OC1, there is the process of electric discharge in the first capacitor C1,
Although the voltage of first capacitor C1 has summary always since power supply 04VCC is timely charged to first capacitor C1
Micro- decline, so, the photoelectrical coupler OC1 are unable to get a stable voltage, increase a second diode D2 newly
With bootstrap capacitor third capacitor C3, a stable voltage source, newly-increased bootstrapping electricity can be provided to the photoelectrical coupler OC1
Hold third capacitor C3 due in addition to outer to photoelectrical coupler OC1 power supply, absolutely not others discharge paths, so can protect
Hold a relatively stable voltage.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principle of the present invention, several improvement and deformations can also be made, these improvement and deformations are also considered as
Protection scope of the present invention.
Claims (9)
1. a kind of driving circuit of high position metal-oxide-semiconductor, which is characterized in that including sequentially connected input circuit, optical coupling isolation circuit
And driving circuit；
The voltage input end of the voltage input end of the input circuit and the driving circuit is all connected with power supply；
The input circuit is used to provide supply voltage for the optical coupling isolation circuit, and driving signal is transmitted to the optocoupler
Isolation circuit；
The optical coupling isolation circuit includes photoelectrical coupler, for realizing the photoelectrical coupler according to the driving signal height
On-off；
The driving circuit is used to realize the driving to high-order metal-oxide-semiconductor according to the on-off of the photoelectrical coupler.
2. the driving circuit of high position metal-oxide-semiconductor as described in claim 1, which is characterized in that the photophore of the photoelectrical coupler
The anode of part is connect with the voltage output end of the input circuit, the driving of the cathode of the luminescent device and the input circuit
First output end of signal output end connection, the collector of the light receiving element of the photoelectrical coupler and the driving circuit connects
It connects, the emitter of the light receiving element is connect with the second output terminal of the driving circuit；Wherein, the of the driving circuit
One output end is used to connect the drain electrode of the high-order metal-oxide-semiconductor, and the second output terminal of the driving circuit is for connecting the high position
The source electrode of metal-oxide-semiconductor.
3. the driving circuit of high position metal-oxide-semiconductor as claimed in claim 2, which is characterized in that the driving circuit includes the first electricity
Resistance, second resistance, first capacitor, the second capacitor and first diode；
The anode of the first diode connects the power supply, and the cathode of the first diode is separately connected described first
One end of one end of resistance and the first capacitor；
One end of second capacitor is separately connected the other end of the first resistor, the collector of the light receiving element and institute
State one end of second resistance, the other end of second capacitor is separately connected the other end of the first capacitor, described second defeated
The emitter of outlet and the light receiving element；
The other end of the second resistance connects first output end.
4. the driving circuit of high position metal-oxide-semiconductor as claimed in claim 2, which is characterized in that the input circuit includes third electricity
Resistance；
One end of the 3rd resistor connects the voltage input end of the input circuit, and the other end of the 3rd resistor connects institute
State the voltage output end of input circuit.
5. the driving circuit of high position metal-oxide-semiconductor as claimed in claim 4, which is characterized in that the input circuit further includes the 4th
Resistance；
One end of 4th resistance connects the driving signal output end, the other end ground connection of the 4th resistance.
6. the driving circuit of high position metal-oxide-semiconductor as claimed in claim 3, which is characterized in that the input circuit further includes the 5th
Resistance, the 6th resistance, the 7th resistance and switching tube；
The input terminal of the switching tube is separately connected one end of the 5th resistance and one end of the 6th resistance, the switch
The control terminal of pipe is separately connected one end of the 7th resistance and the driving signal input of the input circuit, the switching tube
Output end ground connection；
The other end of 5th resistance is separately connected the voltage output end of power supply and the input circuit；
The other end of 6th resistance connects the driving signal output end of the input circuit；
The other end of 7th resistance is grounded.
7. the driving circuit of high position metal-oxide-semiconductor as claimed in claim 6, which is characterized in that the photoelectrical coupler further includes the
Five pins, the 5th pin are connected between one end of the first resistor and the cathode of the first diode.
8. the driving circuit of high position metal-oxide-semiconductor as claimed in claim 6, which is characterized in that the optical coupling isolation circuit further includes
Second diode and third capacitor；
The photoelectrical coupler further includes the 5th pin；
The anode of second diode connects the anode of the first diode, and the cathode of second diode is separately connected
One end of 5th pin and the third capacitor；
The other end of the third capacitor connects the emitter of the light receiving element.
9. the driving circuit of high position metal-oxide-semiconductor as claimed in claim 6, which is characterized in that the switching tube is N-channel MOS pipe；
Wherein, the control terminal of the switching tube is the grid of N-type metal-oxide-semiconductor, and the input terminal of the switching tube is the drain electrode of N-type metal-oxide-semiconductor, institute
The output end for stating switching tube is the source electrode of N-type metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811429717.2A CN109450232B (en) | 2018-11-26 | 2018-11-26 | Drive circuit of high-order MOS pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811429717.2A CN109450232B (en) | 2018-11-26 | 2018-11-26 | Drive circuit of high-order MOS pipe |
Publications (2)
| Publication Number | Publication Date |
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| CN109450232A true CN109450232A (en) | 2019-03-08 |
| CN109450232B CN109450232B (en) | 2020-06-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811429717.2A Expired - Fee Related CN109450232B (en) | 2018-11-26 | 2018-11-26 | Drive circuit of high-order MOS pipe |
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| CN110086458A (en) * | 2019-06-10 | 2019-08-02 | 天通盛邦通信科技（苏州）有限公司 | A kind of NMOS output driving circuit and driving method |
| CN113271013A (en) * | 2021-05-13 | 2021-08-17 | 浪潮商用机器有限公司 | Buck chip drive circuit and Buck chip drive system |
| CN114866081A (en) * | 2022-05-26 | 2022-08-05 | 惠州市盛微电子有限公司 | Drive circuit for driving NMOS (N-channel metal oxide semiconductor) tube connected with anode of battery pack |
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| CN101447729A (en) * | 2008-12-24 | 2009-06-03 | 北京新雷能有限责任公司 | Drive circuit of MOSFET of P ditch in BUCK regulator |
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| CN110086458A (en) * | 2019-06-10 | 2019-08-02 | 天通盛邦通信科技（苏州）有限公司 | A kind of NMOS output driving circuit and driving method |
| CN113271013A (en) * | 2021-05-13 | 2021-08-17 | 浪潮商用机器有限公司 | Buck chip drive circuit and Buck chip drive system |
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|---|---|
| CN109450232B (en) | 2020-06-30 |
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