CN114866081A - Drive circuit for driving NMOS (N-channel metal oxide semiconductor) tube connected with anode of battery pack - Google Patents
Drive circuit for driving NMOS (N-channel metal oxide semiconductor) tube connected with anode of battery pack Download PDFInfo
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- CN114866081A CN114866081A CN202210589642.4A CN202210589642A CN114866081A CN 114866081 A CN114866081 A CN 114866081A CN 202210589642 A CN202210589642 A CN 202210589642A CN 114866081 A CN114866081 A CN 114866081A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 8
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000004146 energy storage Methods 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000000087 stabilizing effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The invention discloses a drive circuit for driving an NMOS tube connected with the anode of a battery pack, which comprises: the device comprises a single chip microcomputer, a driving module, an energy storage module, an NMOS (N-channel metal oxide semiconductor) tube power supply module, a triggering module, an optocoupler driving module and a positive NMOS tube Q2. The PWM signal output by the single chip microcomputer is driven by the driving module and then input to the input control end of the energy storage module; the energy storage module charges the NMOS tube power supply module; the output control end of the NMOS tube power supply module is connected with the input end of the trigger module, and the output end of the trigger module is connected with a trigger pin Det of the singlechip; the NMOS tube power supply module supplies power to the optocoupler driving module; the singlechip drives the positive NMOS tube Q2 through the optocoupler drive module after receiving the trigger signal of the trigger module. The drive circuit for driving the NMOS tube connected with the anode of the battery pack, disclosed by the invention, adopts discrete components to form the drive circuit for the NMOS tube connected with the anode of the battery pack, and is low in cost.
Description
Technical Field
The invention relates to the technical field of battery management systems, in particular to a driving circuit for driving an NMOS (N-channel metal oxide semiconductor) tube connected with the anode of a battery pack.
Background
In a battery management system, an NMOS transistor is typically placed at the negative terminal of the battery pack for controlling the output of the negative terminal of the battery pack. In the prior art, a PMOS transistor may also be used to connect the terminals of the battery pack to control the positive output of the battery pack. However, the PMOS transistor has a large internal resistance and is not suitable for application in a large current situation.
Therefore, in order to satisfy the application of large current, it is necessary to select the NMOS transistor to be connected to the positive electrode of the battery pack. In the prior art, a special chip is required to drive an NMOS tube connected to the anode of a battery pack. However, the dedicated chip is expensive, resulting in high cost of the battery management system.
Therefore, it is an urgent need to solve the problem of designing a low-cost driving circuit for driving the NMOS transistor of the positive electrode of the battery pack.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a drive circuit for driving an NMOS (N-channel metal oxide semiconductor) tube connected with the anode of a battery pack.
The purpose of the invention is realized by the following technical scheme:
a driver circuit for driving an NMOS transistor connected to a positive terminal of a battery pack, comprising: the device comprises a singlechip, a driving module, an energy storage module, an NMOS (N-channel metal oxide semiconductor) tube power supply module, a triggering module, an optocoupler driving module and a positive NMOS tube Q2;
the PWM signal output by the single chip microcomputer is driven by the driving module and then input to the input control end of the energy storage module; the energy storage module charges the NMOS tube power supply module; the output control end of the NMOS tube power supply module is connected with the input end of the trigger module, and the output end of the trigger module is connected with a trigger pin Det of the single chip microcomputer; the NMOS tube power supply module supplies power to the optocoupler driving module;
the single chip microcomputer outputs a conducting signal to the optocoupler driving module to conduct the optocoupler driving module after receiving a triggering signal of the triggering module; when the optocoupler driving module is switched on, outputting a switching-on control signal to a G pole of the positive NMOS tube Q2; the D pole of the positive pole NMOS tube Q2 is connected with the positive pole of the battery pack, and the S pole of the positive pole NMOS tube Q2 is the output end.
In one embodiment, the driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack further comprises a voltage reduction module; the voltage reduction module reduces the voltage of the battery pack and supplies power to the single chip microcomputer.
In one embodiment, the driving module includes: a first resistor R1, a first capacitor C1 and a first zener diode ZD 1; one end of the first resistor R1 is connected with a PWM output pin of a singlechip, and the other end of the first resistor R1 is connected with the negative electrode of the first voltage-stabilizing diode ZD1 after being connected with the first capacitor C1 in series; the anode of the first zener diode ZD1 is connected with the cathode of the battery pack, and the cathode of the first zener diode ZD1 is used as the output end and connected with the input control end of the energy storage module.
In one embodiment, the energy storage module comprises: a second resistor R2, a first NMOS transistor Q1 and an inductor L1;
two ends of the second resistor R2 are respectively connected with the G pole and the S pole of the first NMOS transistor Q1; the S pole of the first NMOS tube Q1 is also connected with the negative pole of the battery pack;
one end of the inductor L1 is connected to the D pole of the first NMOS transistor Q1, and the other end is connected to the output end of the voltage-reducing module.
In one embodiment, the NMOS transistor power supply module includes: a diode D1 and a second capacitor C2; the anode of the diode D1 is connected with the D electrode of the first NMOS transistor Q1, and the cathode is connected in series with the second capacitor C2 and then connected with the S electrode of the positive NMOS transistor Q2; and the negative electrode of the diode D1 and the node of the second capacitor C2 are used as output control ends and are connected with the power input end of the optocoupler driving module, and meanwhile, the negative electrode of the diode D1 is connected with the input end of the triggering module.
In one embodiment, the triggering module comprises: the circuit comprises a third resistor R3, a fourth resistor R4, a second voltage stabilizing diode ZD2 and a first photoelectric coupler U1;
one end of the third resistor R3 is connected with the output control end of the NMOS tube power supply module, and the other end of the third resistor R3 is connected with the negative electrode of the second zener diode ZD 2; the anode of the second zener diode ZD2 is connected to the input end of the first photoelectric coupler U1, and the power input end of the first photoelectric coupler U1 is connected to the output end of the voltage reduction module; the output end of the first photoelectric coupler U1 is connected with a trigger pin Det of the singlechip; the output end of the first photoelectric coupler U1 is also connected in series with a fourth resistor R4 and then connected with the negative electrode of the battery pack.
In one embodiment, the optocoupler drive module includes: a fifth resistor R5, a sixth resistor R6 and a second photoelectric coupler U2; one end of the fifth resistor R5 is connected with an output control pin FET of the singlechip, and the other end is connected with a control input end of the second photoelectric coupler U2; the output end of the second photoelectric coupler U2 is connected with a sixth resistor R6 in series and then is connected with the G pole of the positive NMOS tube Q2.
In one embodiment, the second optocoupler U2 is a logic output optocoupler.
In one embodiment, the second optocoupler U2 is a TLP 5772.
In one embodiment, the output voltage of the voltage reduction module is 5V.
The drive circuit for driving the NMOS tube connected with the anode of the battery pack adopts discrete components to form the drive circuit for the NMOS tube of the anode of the battery pack, thereby greatly reducing the cost of a battery management system.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic block diagram of a driving circuit for driving an NMOS transistor connected to a positive electrode of a battery pack according to the present invention;
fig. 2 is a schematic circuit diagram of the driving circuit shown in fig. 1.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
A driver circuit 10 for driving an NMOS transistor connected to a positive terminal of a battery pack, comprising: the circuit comprises a single chip microcomputer 100, a driving module 200, an energy storage module 300, an NMOS (N-channel metal oxide semiconductor) tube power supply module 400, a triggering module 500, an optocoupler driving module 600 and an anode NMOS tube Q2.
The PWM signal output by the single chip microcomputer 100 is driven by the driving module 200 and then input to the input control terminal of the energy storage module 300. The energy storage module 300 charges the NMOS transistor power supply module 400. The output control end of the NMOS tube power supply module 400 is connected to the input end of the trigger module 500, and the output end of the trigger module 500 is connected to the trigger pin Det of the single chip microcomputer 100. The NMOS transistor power supply module 400 supplies power to the optocoupler drive module 600.
After receiving the trigger signal of the trigger module 500, the single chip microcomputer 100 outputs a switch-on signal to the optocoupler driving module 600 to switch on the optocoupler driving module 600. When the optocoupler drive module 600 is turned on, the optocoupler drive module outputs a turn-on control signal to the G pole of the positive NMOS transistor Q2. The D pole of the positive NMOS transistor Q2 is connected to the positive pole of the battery pack 20, and the S pole of the positive NMOS transistor Q2 is the output terminal.
The driving circuit 10 for driving the NMOS transistor connected to the positive electrode of the battery pack further includes a voltage dropping module 700; the voltage reduction module 700 reduces the voltage of the battery pack 20 and supplies power to the single chip microcomputer 100. In the present embodiment, the voltage dropping module 700 outputs a voltage of 5V. The specific circuit structure of the voltage-reducing module 700 is the prior art, and therefore, is not described herein.
In the present embodiment, the driving module 200 includes: a first resistor R1, a first capacitor C1 and a first zener diode ZD 1. One end of the first resistor R1 is connected with a PWM output pin of the singlechip, and the other end is connected with the negative electrode of the first voltage-stabilizing diode ZD1 after being connected with the first capacitor C1 in series. The anode of the first zener diode ZD1 is connected to the cathode of the battery pack 20, and the cathode of the first zener diode ZD1 is connected as an output terminal to the input control terminal of the energy storage module 300.
In this embodiment, the energy storage module 300 includes: a second resistor R2, a first NMOS transistor Q1 and an inductor L1. Two ends of the second resistor R2 are connected to the G-pole and the S-pole of the first NMOS transistor Q1, respectively. The S-pole of the first NMOS transistor Q1 is also connected to the negative pole of the battery pack 20. One end of the inductor L1 is connected to the D-pole of the first NMOS transistor Q1, and the other end is connected to the output end of the buck module 700.
In this embodiment, the NMOS transistor power supply module 400 includes: a diode D1 and a second capacitor C2. The anode of the diode D1 is connected to the D-pole of the first NMOS transistor Q1, and the cathode is connected in series with the second capacitor C2 and then to the S-pole of the positive NMOS transistor Q2. The cathode of the diode D1 and the node of the second capacitor C2 are used as output control terminals to be connected to the power input terminal of the optocoupler driving module 600, and are also connected to the input terminal of the trigger module 500.
In this embodiment, the trigger module 500 includes: a third resistor R3, a fourth resistor R4, a second zener diode ZD2 and a first photocoupler U1. One end of the third resistor R3 is connected to the output control end of the NMOS transistor power supply module 400, and the other end is connected to the negative electrode of the second zener diode ZD 2. The anode of the second zener diode ZD2 is connected to the input terminal of the first photoelectric coupler U1, and the power input terminal of the first photoelectric coupler U1 is connected to the output terminal of the voltage step-down module 700. The output end of the first photocoupler U1 is connected with the trigger pin Det of the singlechip 100. The output end of the first photocoupler U1 is also connected in series with a fourth resistor R4 and then connected with the negative electrode of the battery pack 20.
In this embodiment, the optocoupler drive module 600 includes: a fifth resistor R5, a sixth resistor R6 and a second photoelectric coupler U2. One end of the fifth resistor R5 is connected to the output control pin FET of the singlechip 100, and the other end is connected to the control input end of the second photocoupler U2. The output end of the second photoelectric coupler U2 is connected in series with a sixth resistor R6 and then is connected with the G pole of a positive NMOS tube Q2.
In a preferred embodiment, the second optocoupler U2 is a logic output optocoupler. In this embodiment, the second photocoupler U2 is a TLP 5772.
The following explains the operation principle of the driving circuit 10 of the present invention:
the voltage of the battery pack 20 is reduced by the voltage reduction module 700 to obtain a 5V voltage, and the 5V voltage output by the voltage reduction module 700 is respectively used for supplying power to the single chip microcomputer 100 of the whole battery management system and supplying power to the first photoelectric coupler U1, and is also output to the inductor L1 to provide electric energy for the inductor L1 to store energy;
the single chip microcomputer 100 outputs a PWM waveform through a PWM output pin; when the PWM waveform is at a high level, the high level of the PWM waveform passes through the first resistor R1 and the first capacitor C1, and then is input to the G-pole of the first NMOS transistor Q1; at this time, the first voltage stabilizing resistor ZD1 stabilizes the PWM waveform, thereby ensuring that the G pole of the first NMOS transistor Q1 receives a stable high level; that is, when the PWM waveform is at a high level, the first NMOS transistor Q1 is turned on, and the inductor L1 starts to store energy;
when the PWM waveform is at a low level, the first resistor R1, the first capacitor C1, and the first stabilizing resistor ZD1 form a bleed-off circuit; at this time, G of the first NMOS transistor Q1 is low; that is, when the PWM waveform is at a low level, the first NMOS transistor Q1 is turned off; at this time, the electric energy stored in the inductor L1 continuously charges the second capacitor C2 through the diode D1;
as the second capacitor C2 is continuously charged, the voltage of the cathode of the diode D1 is continuously increased; when the voltage of the cathode of the diode D1 reaches the breakdown voltage of the second zener diode ZD2, the second zener diode ZD2 is broken down; at this time, the first photoelectric coupler U1 is turned on, so that the first photoelectric coupler U1 outputs a high-level trigger signal to the trigger pin Det of the single chip microcomputer 100; after the single chip microcomputer 100 detects that the trigger pin Det receives a high-level trigger signal, the output of a PWM waveform is stopped, and at this time, the voltage of the second capacitor C2 is not increased any more;
when the voltage of the second capacitor C2 stops rising, the voltage on the second capacitor C2 supplies power to the second photoelectric coupler U2; meanwhile, the singlechip 100 outputs a control signal from the output control pin FET to the control input terminal of the second photocoupler U2;
when the output control pin FET of the singlechip 100 outputs a high level, the second photoelectric coupler U2 is conducted; at this time, the second photocoupler U2 outputs a high level to the G pole of the positive NMOS transistor Q2, thereby turning on the positive NMOS transistor Q2;
when the output control pin FET of the singlechip 100 outputs a low level, the second photoelectric coupler U2 is cut off; at this time, the second photo coupler U2 outputs a low level to the G pole of the positive NMOS transistor Q2, thereby turning off the positive NMOS transistor Q2.
The drive circuit 10 for driving the NMOS tube connected with the anode of the battery pack forms the drive circuit 10 through discrete components so as to drive the NMOS tube connected with the anode of the battery pack 20, thereby greatly reducing the cost of the battery management system.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A driver circuit for driving an NMOS transistor connected to a positive terminal of a battery, comprising: the device comprises a singlechip, a driving module, an energy storage module, an NMOS (N-channel metal oxide semiconductor) tube power supply module, a triggering module, an optocoupler driving module and a positive NMOS tube Q2;
the PWM signal output by the single chip microcomputer is driven by the driving module and then input to the input control end of the energy storage module; the energy storage module charges the NMOS tube power supply module; the output control end of the NMOS tube power supply module is connected with the input end of the trigger module, and the output end of the trigger module is connected with a trigger pin Det of the singlechip; the NMOS tube power supply module supplies power to the optocoupler driving module;
the single chip microcomputer outputs a conducting signal to the optocoupler driving module to conduct the optocoupler driving module after receiving a triggering signal of the triggering module; when the optocoupler driving module is switched on, outputting a switching-on control signal to a G pole of the positive NMOS tube Q2; the D pole of the positive pole NMOS tube Q2 is connected with the positive pole of the battery pack, and the S pole of the positive pole NMOS tube Q2 is the output end.
2. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 1, further comprising a voltage-reducing module; the voltage reduction module reduces the voltage of the battery pack and supplies power to the single chip microcomputer.
3. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 2, wherein said driving module comprises: a first resistor R1, a first capacitor C1 and a first zener diode ZD 1; one end of the first resistor R1 is connected with a PWM output pin of a singlechip, and the other end of the first resistor R1 is connected with the negative electrode of the first voltage-stabilizing diode ZD1 after being connected with the first capacitor C1 in series; the anode of the first zener diode ZD1 is connected with the cathode of the battery pack, and the cathode of the first zener diode ZD1 is connected with the input control end of the energy storage module as the output end.
4. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 2, wherein said energy storage module comprises: a second resistor R2, a first NMOS transistor Q1 and an inductor L1;
two ends of the second resistor R2 are respectively connected with the G pole and the S pole of the first NMOS transistor Q1; the S pole of the first NMOS tube Q1 is also connected with the negative pole of the battery pack;
one end of the inductor L1 is connected to the D pole of the first NMOS transistor Q1, and the other end is connected to the output end of the voltage-reducing module.
5. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 4, wherein the NMOS transistor power supply module comprises: a diode D1 and a second capacitor C2; the anode of the diode D1 is connected with the D electrode of the first NMOS transistor Q1, and the cathode is connected in series with the second capacitor C2 and then connected with the S electrode of the positive NMOS transistor Q2; and the negative electrode of the diode D1 and the node of the second capacitor C2 are used as output control ends and are connected with the power input end of the optocoupler driving module, and meanwhile, the negative electrode of the diode D1 is connected with the input end of the triggering module.
6. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 2, wherein said trigger module comprises: the circuit comprises a third resistor R3, a fourth resistor R4, a second voltage stabilizing diode ZD2 and a first photoelectric coupler U1;
one end of the third resistor R3 is connected with the output control end of the NMOS tube power supply module, and the other end of the third resistor R3 is connected with the negative electrode of the second zener diode ZD 2; the anode of the second zener diode ZD2 is connected to the input end of the first photoelectric coupler U1, and the power input end of the first photoelectric coupler U1 is connected to the output end of the voltage reduction module; the output end of the first photoelectric coupler U1 is connected with a trigger pin Det of the singlechip; the output end of the first photoelectric coupler U1 is also connected in series with a fourth resistor R4 and then connected with the negative electrode of the battery pack.
7. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 1, wherein the optocoupler driving module comprises: a fifth resistor R5, a sixth resistor R6 and a second photoelectric coupler U2; one end of the fifth resistor R5 is connected with an output control pin FET of the singlechip, and the other end is connected with a control input end of the second photoelectric coupler U2; the output end of the second photoelectric coupler U2 is connected with a sixth resistor R6 in series and then is connected with the G pole of the positive NMOS tube Q2.
8. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 7, wherein said second photo coupler U2 is a logic output photo coupler.
9. The driving circuit for driving the NMOS transistor connected to the positive electrode of the battery pack according to claim 8, wherein said second photo-coupler U2 is a TLP 5772.
10. The driving circuit of claim 2, wherein the voltage dropping module outputs 5V for driving the NMOS transistor connected to the positive electrode of the battery pack.
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Address after: No. 3 Jiayu Road, Dongxing District, Dongjiang Science and Technology Park, Zhongkai High tech Zone, Huizhou City, Guangdong Province, 516006 Patentee after: HUIZHOU SUNWAY ELECTRONICS Co.,Ltd. Country or region after: China Address before: 516006 outside community 6, Zhongkai high tech Zone, Huizhou City, Guangdong Province (plant) Patentee before: HUIZHOU SUNWAY ELECTRONICS Co.,Ltd. Country or region before: China |
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