CN101582628B - High-voltage starting circuit with constant current control - Google Patents

High-voltage starting circuit with constant current control Download PDF

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Publication number
CN101582628B
CN101582628B CN2008100947792A CN200810094779A CN101582628B CN 101582628 B CN101582628 B CN 101582628B CN 2008100947792 A CN2008100947792 A CN 2008100947792A CN 200810094779 A CN200810094779 A CN 200810094779A CN 101582628 B CN101582628 B CN 101582628B
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China
Prior art keywords
output
voltage
starting circuit
control
source
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Expired - Fee Related
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CN2008100947792A
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Chinese (zh)
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CN101582628A (en
Inventor
徐达经
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NIKESEN MICRO ELECTRONIC CO Ltd
Niko Semiconductor Co Ltd
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NIKESEN MICRO ELECTRONIC CO Ltd
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Abstract

The invention discloses a high-voltage starting circuit with constant current control, which is applied to a switch power supply. The high-voltage starting circuit comprises a high-voltage junction transistor, a control transistor, a current detecting resistor and a bias resistor, wherein a drain pole of the high-voltage junction transistor is coupled with a high-voltage power supply, a grid pole is coupled to the drain pole of the control transistor, and a source pole is coupled to the current detecting resistor; the current detecting resistor supplies the negative bias of the grid-source pole of the high-voltage junction transistor by constant voltage drop generated in a such a way that the current of the high-voltage junction transistor flows across both ends of the detecting resistor and enables the high-voltage junction transistor to output constant current; one end of the bias resistor is coupled to the grid pole of the high-voltage junction transistor, and the other end is coupled to the output end of the high-voltage starting circuit so that the grid pole voltage of the high-voltage junction transistor is equal to output voltage and the grid-source pole of the high-voltage transistor maintains the constant negative bias so as to supply the constant output current.

Description

Decide the high-voltage starting circuit of Current Control
Technical field
The present invention relates to a kind of high-voltage starting circuit of deciding Current Control that has, be applied to Switching Power Supply, the high voltage source that can be used in broad input range produces decide electric current output the output current of start-up circuit and time is fixed, and can prevent as if the output excessive and situation that causes assembly to wreck of the output current that causes when unusual that is short-circuited.
Background technology
See also Fig. 1, be one of existing high-voltage starting circuit.As shown in Figure 1, this existing high-voltage starting circuit is to utilize high pressure junction transistor grid-source electrode back bias voltage restriction output current, includes a high pressure junction transistor Q1, one first mos field effect transistor Q2, one second mos field effect transistor Q3, a bias resistance R1, a PNP transistor Q4, a Zener diode ZD1 and a hysteresis comparator COMP1.The drain electrode of its mesohigh junction transistor Q1 couples a high voltage source VIN, and its source electrode is coupled to the drain electrode of the first mos field effect transistor Q2, and its grid reference ground end then direct and circuit joins.The source electrode of the first mos field effect transistor Q2 couples output voltage VO UT, and bias resistance R1 provides positive bias to make the first mos field effect transistor Q2 conducting after high pressure junction transistor Q1 conducting.Utilize hysteresis comparator COMP1 to produce control signal when output voltage VO UT arrives predetermined reference voltage VT and make the second mos field effect transistor Q3 conducting, making the first mos field effect transistor Q2 bias voltage is that negative value is lower than pinch-off voltage and stops the first mos field effect transistor Q2 conducting and stop electric current output.Zener diode ZD1 and PNP transistor Q4 are serially connected with the first mos field effect transistor Q2 and prevent that the first mos field effect transistor Q2 grid from the abnormal case of overtension may take place.
Consult Fig. 2 again, be another existing high-voltage starting circuit.As shown in Figure 2, this existing high-voltage starting circuit is similar to existing high-voltage starting circuit shown in Figure 1, the existing high-voltage starting circuit of Fig. 2 includes a high pressure junction transistor Q1, one first mos field effect transistor Q2, one second mos field effect transistor Q3, one bias resistance R1, the grid that the grid of its mesohigh junction transistor Q1 changes with the first mos field effect transistor Q2 joins, its drain electrode couples a high voltage source VIN, its source electrode is coupled to the drain electrode of the first mos field effect transistor Q2, the source electrode of the first mos field effect transistor Q2 couples output voltage terminal VOUT, bias resistance R1 provides positive bias to make the first mos field effect transistor Q2 conducting after high pressure junction transistor Q1 conducting, utilize hysteresis comparator COMP1 to produce control signal when output voltage VO UT arrives predetermined reference voltage VT and make the second mos field effect transistor Q3 conducting, making the first mos field effect transistor Q2 bias voltage is that negative value is lower than threshold voltage and stops the first mos field effect transistor Q2 conducting and stop electric current output.
Consult Fig. 3, be the drain current ID of high pressure junction transistor and the corresponding characteristic curve of grid-source voltage Vgs, high-voltage starting circuit is to utilize its grid-source electrode back bias voltage drain current to reduce characteristic with restriction output current size at present, but existing high-voltage starting circuit no current detects resistance, so can't provide fixing negative bias to be pressed between high pressure junction transistor grid-source electrode, satisfy its output current ID then from large to small, as shown in Figure 4, it starts moment output maximum current IDL (it is different that maximum current can be imported the power source voltage height with high pressure), subsequently drain current ID be output current in time T be parabolic curve and reduce.The back bias voltage of its high pressure junction transistor of existing high-voltage starting circuit can be expressed as follows:
Vgs(Q1)=-(Vth(Q2)+Vo)
Wherein, Vth (Q2) is the threshold voltage (Gate to Source Threshold Voltage) of the first mos field effect transistor Q2 conducting.
Owing to rising in time, output voltage causes junction transistor grid-source voltage Vgs (Q1) so the change output current can diminish gradually, be to provide enough output currents must improve the current-limiting points that starts the moment output current, when the output short circuit takes place, easily cause the excessive and situation of burning of consumed power.
Summary of the invention
In view of this, the object of the invention be provide one fixedly output current the output current of start-up circuit and time are fixed, and can prevent if output is short-circuited that the output current that causes when unusual is excessive and cause the assembly situation that wrecks.Of the present inventionly decide the Current Control high-voltage starting circuit, it comprises a high pressure junction transistor, an oxide-semiconductor control transistors and a bias resistance.This high pressure junction transistor has one first source/drain electrode, one second source/drain electrode and a first grid, and this first source/drain electrode couples a high voltage source, and this second source/drain electrode couples an output.This oxide-semiconductor control transistors has one the 3rd source/drain electrode, one the 4th source/drain electrode and a second grid, the 3rd source/drain electrode couples this first grid of this high pressure junction transistor, the 4th source/drain electrode couples ground, and this second grid receives a control signal, and switches according to this control signal.One end of this bias resistance couples this first grid of this high pressure junction transistor, and the other end couples this output.Wherein, when this oxide-semiconductor control transistors during in cut-off state, this high pressure junction transistor is exported a stabling current to this output, and when this oxide-semiconductor control transistors during in conducting state, this high pressure junction transistor stops to export this electric current.So, this current detecting unit falls this high pressure junction transistor grid-source electrode back bias voltage is provided by flow through fixed voltage that this detection resistance two ends produce of this high pressure junction transistor electric current, make this high pressure junction transistor output fixed current, and can set output current value by the resistance value that changes current sense resistor.
Advantage on the circuit of the present invention is to decide high voltage source that current design can be used in broad input range to produce and decide electric current output the output current of start-up circuit and time are fixed, and can prevent from as if output the excessive and situation that causes assembly to wreck of the output current that causes when unusual to take place.The back bias voltage of its junction transistor of high-voltage starting circuit of the present invention can be expressed as follows:
Vgs(Q1)=-(Io?X?R)
Wherein, Io is an output current, and R is for detecting the resistance value of resistance.
By following formula as can be known, be that then high pressure junction transistor grid-source voltage Vgs (Q1) and output current Io can keep definite value to definite value because of R.
Description of drawings
Fig. 1 is one of existing high-voltage starting circuit;
Fig. 2 is another existing high-voltage starting circuit;
Fig. 3 is the corresponding characteristic curve of junction transistor drain current and grid-source voltage;
Fig. 4 is the corresponding time T curvilinear motion of existing high-voltage starting circuit output current figure;
Fig. 5 decides the Current Control high-voltage starting circuit and specifically uses representative graph for of the present invention;
Fig. 6 is another enforcement illustration of Current Control high-voltage starting circuit of deciding of the present invention; And
Fig. 7 is decide Current Control high-voltage starting circuit output current and a time chart of the present invention.
[primary clustering symbol description]
Prior art:
High pressure junction transistor Q1
The first mos field effect transistor Q2
The second mos field effect transistor Q3
PNP transistor Q4
Bias resistance R1
Zener diode ZD1
Hysteresis comparator COMP1
High voltage source VIN
Output voltage VO UT
Reference voltage V T
Storage capacitor C1
Electric current I D, ID L
Voltage Vgs
Time T
The present invention:
High pressure junction transistor Q1
Oxide-semiconductor control transistors Q5
Bias resistance R1
Current detecting unit R2
Hysteresis comparator COMP
High voltage source VIN
Output voltage VO UT
Reference voltage V T
Storage capacitor C1
Controller CON
Rectifier diode D
The winding T of transformer
Electric current I D
Time T, t 1
Embodiment
Shown in Figure 5, decide the Current Control high-voltage starting circuit and specifically use representative graph for of the present invention, it includes a high pressure junction transistor Q1, an oxide-semiconductor control transistors Q5, a current detecting unit R2, a bias resistance R1 and a storage capacitor C1, its mesohigh junction transistor Q1 can be junction field effect transistor (Junction Field Effect Transistor, JFET) or depletion MOS's field-effect transistor (Depletion MOSFET), be that example illustrates with JFET at this.The drain electrode of high pressure junction transistor Q1 couples a high voltage source VIN, source electrode is coupled to current detecting unit R2, and current detecting unit R2 produces voltage drop and provides high pressure junction transistor Q1 grid-source electrode back bias voltage to make high pressure junction transistor Q1 output current by the electric current of the high pressure junction transistor Q1 current detecting unit R2 two ends of flowing through.In practical application, the source electrode of high pressure junction transistor Q1 can directly be coupled to the output VOUT of high-voltage starting circuit, still can reach the fixedly effect of output current, couple a current detecting unit R2 between the output VOUT of the source electrode of high pressure junction transistor Q1 and high-voltage starting circuit if see through, then can further set the output current value of deciding the Current Control high-voltage starting circuit by its resistance value of change.The end of bias resistance R1 is coupled to the grid of high pressure junction transistor Q1, and the other end then is coupled to the output VOUT of high-voltage starting circuit, makes high pressure junction transistor Q1 grid voltage be same as output voltage.Output VOUT couples a control circuit or a load device (not drawing), so that its operation required electric power to be provided.See through current detecting unit R2 and the formed feedback of bias resistance R1, high pressure junction transistor Q1 grid-source electrode can be kept a fixed negative bias so that fixedly output current to be provided.Utilize a control unit, hysteresis comparator COMP as present embodiment, produce control signal and make oxide-semiconductor control transistors Q5 conducting when output voltage arrives predetermined reference voltage VT, oxide-semiconductor control transistors Q5 conducting makes grid-source electrode back bias voltage that high pressure junction transistor Q1 is provided be higher than pinch-off voltage and stop conducting and stop electric current output simultaneously.
Shown in Figure 6, decide the Current Control high-voltage starting circuit another implements illustration for of the present invention.In the present embodiment, output VOUT couples a controller CON to provide electric power for its operation.In addition, output VOUT sees through the winding T that a rectifier diode D couples a transformer.When controller CON comes into operation and during high pressure junction transistor Q1 stop conducting, the winding T of transformer can see through rectifier diode D provide electric power to continue running to controller CON.
At last, please refer to Fig. 7, this figure is decide Current Control high-voltage starting circuit output current and a time chart of the present invention.Wherein Xiang Guan circuit diagram is please in the lump with reference to figure 5 and Fig. 6.As shown in Figure 7, output current is fixedly kenel after starting, be t until the time 1The time, output voltage VO UT reaches reference voltage V T, and during high pressure junction transistor Q1 stop conducting, output current just reduces to zero.Therefore, of the present inventionly decide the Current Control high-voltage starting circuit, can prevent if output is short-circuited that the output current that causes when unusual is excessive and cause the assembly situation that wrecks.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.

Claims (10)

1. one kind has the high-voltage starting circuit of deciding Current Control, it is characterized in that, includes:
One high pressure junction transistor has one first source/drain electrode, one second source/drain electrode and a first grid, and this first source/drain electrode couples a high voltage source, and wherein this second source/drain electrode couples an output;
One oxide-semiconductor control transistors, have one the 3rd source/drain electrode, one the 4th source/drain electrode and a second grid, the 3rd source/drain electrode couples this first grid of this high pressure junction transistor, and the 4th source/drain electrode couples ground, this second grid receives a control signal, and switches according to this control signal; And
One bias resistance, one end couple this first grid of this high pressure junction transistor, and the other end couples this output;
Wherein, when this oxide-semiconductor control transistors during in cut-off state, this high pressure junction transistor is exported a stabling current to this output, and when this oxide-semiconductor control transistors during in conducting state, this high pressure junction transistor stops to export this stabling current.
2. as claimed in claim 1 have a high-voltage starting circuit of deciding Current Control, it is characterized in that more comprise a current detecting unit, the one end couples this second source/drain electrode of this high pressure junction transistor and the other end couples this output.
3. as claimed in claim 2 have a high-voltage starting circuit of deciding Current Control, it is characterized in that more comprise a storage capacitor and be coupled to this output, this storage capacitor receives this stabling current and produces an output voltage.
4. as claimed in claim 3 have a high-voltage starting circuit of deciding Current Control, it is characterized in that this output couples an output device, and this output device is a control circuit or a load device.
5. as claimed in claim 3 have a high-voltage starting circuit of deciding Current Control, it is characterized in that, more comprise a control unit, this control signal is provided, wherein this control unit arrives one when fixing in advance in the accurate position of this output, controls this oxide-semiconductor control transistors and enters cut-off state.
6. as claimed in claim 5 have a high-voltage starting circuit of deciding Current Control, it is characterized in that this control unit comprises a hysteresis comparator, an input of this hysteresis comparator couples this output, another input termination one reference data voltage, and its output is exported this control signal.
7. as claimed in claim 6 have a high-voltage starting circuit of deciding Current Control, it is characterized in that this output couples an output device, and this output device is a control circuit or a load device.
8. as claimed in claim 3 have a high-voltage starting circuit of deciding Current Control, it is characterized in that more comprise a diode, the one end couples this output and a controller, and the other end couples the winding of a transformer.
9. as claimed in claim 8 have a high-voltage starting circuit of deciding Current Control, it is characterized in that, more comprise a control unit, this control signal is provided, wherein this control unit arrives one when fixing in advance in the accurate position of this output, controls this oxide-semiconductor control transistors and enters cut-off state.
10. as claimed in claim 9 have a high-voltage starting circuit of deciding Current Control, it is characterized in that, this control unit comprises a hysteresis comparator, and an input of this hysteresis comparator couples this output, another input termination one reference data voltage and its output is exported this control signal.
CN2008100947792A 2008-05-16 2008-05-16 High-voltage starting circuit with constant current control Expired - Fee Related CN101582628B (en)

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Application Number Priority Date Filing Date Title
CN2008100947792A CN101582628B (en) 2008-05-16 2008-05-16 High-voltage starting circuit with constant current control

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM447632U (en) * 2012-10-05 2013-02-21 Excelliance Mos Corp Power supply and startup circuit thereof
CN103078486A (en) * 2013-01-10 2013-05-01 无锡华润上华半导体有限公司 High-voltage starting circuit in power supply converter
CN103219898B (en) * 2013-04-02 2016-06-01 苏州博创集成电路设计有限公司 There is current sample and start the semiconductor device of structure
CN103475191A (en) * 2013-09-10 2013-12-25 上海斐讯数据通信技术有限公司 Control circuit of switching power supply
CN104065257B (en) * 2014-06-25 2017-03-15 深圳市汇川技术股份有限公司 A kind of hysteresis start-up circuit of power supply control chip
US20240113702A1 (en) * 2022-09-29 2024-04-04 Globalfoundries U.S. Inc. Comparator circuits

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0293921A2 (en) * 1987-06-05 1988-12-07 Miyasaka, Katsuyuki Electronic device for operating a light-emitting diode
CN1691482A (en) * 2004-04-22 2005-11-02 冲电气工业株式会社 Constant-current generating circuit
CN1780123A (en) * 2004-11-24 2006-05-31 上海华虹Nec电子有限公司 Power supply converting circuit
CN200997700Y (en) * 2007-01-09 2007-12-26 李江淮 Large-power driving chip of LED light

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0293921A2 (en) * 1987-06-05 1988-12-07 Miyasaka, Katsuyuki Electronic device for operating a light-emitting diode
CN1691482A (en) * 2004-04-22 2005-11-02 冲电气工业株式会社 Constant-current generating circuit
CN1780123A (en) * 2004-11-24 2006-05-31 上海华虹Nec电子有限公司 Power supply converting circuit
CN200997700Y (en) * 2007-01-09 2007-12-26 李江淮 Large-power driving chip of LED light

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
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