CN208656632U - A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike - Google Patents
A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike Download PDFInfo
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- CN208656632U CN208656632U CN201821219163.9U CN201821219163U CN208656632U CN 208656632 U CN208656632 U CN 208656632U CN 201821219163 U CN201821219163 U CN 201821219163U CN 208656632 U CN208656632 U CN 208656632U
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Abstract
The utility model discloses a kind of metal-oxide-semiconductor driving circuits for inhibiting driving voltage spike, including push-pull circuit, RCD absorbing circuit, grid resistance and metal-oxide-semiconductor, it is characterized by: the RCD absorbing circuit is made of absorption resistance R, Absorption Capacitance C and TVS pipe, the cathode of the TVS pipe is connect with the grid of the metal-oxide-semiconductor, the anode of the TVS pipe is connect with one end of the Absorption Capacitance, the other end of the Absorption Capacitance is connect with the source electrode of the metal-oxide-semiconductor, and the absorption resistance is connected in parallel with the TVS pipe.Using the utility model circuit, by increasing RCD circuit, the grid source electrode forward driving peak voltage of metal-oxide-semiconductor can effectively be inhibited, the shutdown reliability of metal-oxide-semiconductor can be improved by increasing negative pressure circuit, the metal-oxide-semiconductor driving circuit of the inhibition driving voltage spike of the utility model has many advantages, such as that structure is simple, reliable performance.
Description
Technical field
The utility model relates to power electronic product field, in particular to a kind of MOS pipe for inhibiting driving voltage spike drives
Dynamic circuit.
Background technique
Existing power-type inhibits in the metal-oxide-semiconductor driving circuit of inhibition driving voltage spike of driving voltage spike, usually
Push-pull circuit output one grid resistance of series connection is to metal-oxide-semiconductor grid, a grid source in parallel resistance between metal-oxide-semiconductor grid and source electrode.
In practical application, the interference and coupling on power lines generates peak voltage on the drive voltage in order to prevent, often can be in grid source electrode
Between a TVS Transient Suppression Diode in parallel again, to inhibit MOS pipe to open the grid source electrode peak voltage at moment, circuit is as schemed
Shown in 1, the breakdown reverse voltage for the TVS pipe being typically chosen is less than the maximum voltage that metal-oxide-semiconductor grid source electrode allows.
In some special applications, such as in the driving application of SIC metal-oxide-semiconductor, Ciss capacitor is smaller, and when conducting holds very much
Be also easy to produce grid source electrode peak voltage, between grid source electrode must a TVS Transient Suppression Diode in parallel carry out suppressor source electrode spike
Voltage.And since the maximum voltage that metal-oxide-semiconductor grid source electrode allows is limited, and in order to reduce conduction loss, and wish the driving of metal-oxide-semiconductor
Voltage platform voltage is as high as possible, the difference very little between maximum voltage for causing driving voltage platform voltage and metal-oxide-semiconductor to allow,
Lead to the TVS pipe for being difficult to select a suitable voltage between two voltage class, it is necessary to optimize existing driving circuit.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of inhibition driving voltages for inhibiting driving voltage spike
The metal-oxide-semiconductor driving circuit of spike, can effectively solve the problem that deficiency in the prior art.
The utility model is achieved through the following technical solutions: a kind of inhibition driving electricity inhibiting driving voltage spike
The metal-oxide-semiconductor driving circuit at pointing peak, including push-pull circuit, RCD absorbing circuit, grid resistance and metal-oxide-semiconductor, the RCD absorb electricity
Absorption resistance R, Absorption Capacitance C and TVS pipe composition are routed, the cathode of the TVS pipe is connect with the grid of the metal-oxide-semiconductor, described
The anode of TVS pipe is connect with one end of the Absorption Capacitance, and the source electrode of the other end of the Absorption Capacitance and the metal-oxide-semiconductor connects
It connects, the absorption resistance is connected in parallel with the TVS pipe.
One end of the Absorption Capacitance is connect with the grid of the metal-oxide-semiconductor as a preferred technical solution, the absorption electricity
The other end of appearance is connect with the cathode of the TVS pipe, and the anode of the TVS pipe is connect with the source electrode of the MOS pipe, the suction
Resistance is received to be connected in parallel with the TVS pipe.
The grid resistance is connected in series in the push-pull output end and the MOS pipe grid as a preferred technical solution,
Between pole, alternatively, grid resistance is connected in series between the metal-oxide-semiconductor source electrode and the push-pull circuit ground level.
Grid source electricity in parallel between the grid of the metal-oxide-semiconductor and the metal-oxide-semiconductor source electrode as a preferred technical solution,
Resistance.
The push-pull circuit is for the driving chip with push-pull output ability or with push-pull output as a preferred technical solution,
The optocoupler of ability.
Electricity is driven in the metal-oxide-semiconductor for the inhibition driving voltage spike for inhibiting driving voltage spike as a preferred technical solution,
Increase a zener diode in road and a negative pressure capacitor, the source electrode of metal-oxide-semiconductor are connect with the cathode of the zener diode, institute
The anode for stating zener diode is connect with the power supply ground level, and the negative pressure capacitor is in parallel with the zener diode to be connected
It connects.
Electricity is driven in the metal-oxide-semiconductor for the inhibition driving voltage spike for inhibiting driving voltage spike as a preferred technical solution,
Increase a pull-up resistor and a pull-up capacitor, one end of the pull-up capacitor and the power supply of the push-pull circuit in road
The other end of connection, the pull-up capacitor is connect with the source electrode of the metal-oxide-semiconductor, and the pull-up resistor is in parallel with the pull-up capacitor
Connection.
The push-pull circuit is made of NPN type triode and PNP type triode as a preferred technical solution, the NPN
The base stage of type triode is connected to driving pwm signal together with the base stage of the PNP type triode；
The collector of the NPN type triode connects the power supply of the push-pull circuit, the collector of the PNP type triode
The push-pull circuit ground level is connected, the emitter of the NPN type triode connect institute with the emitter of the PNP type triode
State push-pull circuit output end；
The push-pull circuit output end connects one end of the grid resistance, described in another termination of the grid resistance
The grid of metal-oxide-semiconductor, the source electrode of the metal-oxide-semiconductor are connect with the push-pull circuit ground level.
By the metal-oxide-semiconductor driving circuit of the inhibition driving voltage spike of the inhibition driving voltage spike of the utility model, lead to
One RCD circuit of increase is crossed between metal-oxide-semiconductor grid and source electrode, is able to solve and above-mentioned is not easy to select appropriate voltage level TVS pipe
The problem of.
The beneficial effects of the utility model are: the inhibition driving voltage of the inhibition driving voltage spike by the utility model
The metal-oxide-semiconductor driving circuit of spike can choose a breakdown voltage lower than metal-oxide-semiconductor driving platform voltage and be greater than metal-oxide-semiconductor drive
The TVS pipe of dynamic threshold voltage level, when metal-oxide-semiconductor is opened, the capacitor on Absorption Capacitance is zero, opens the metal-oxide-semiconductor grid source at moment
Pole peak voltage is by TVS pipe clamper, and as Absorption Capacitance voltage is charged to driving platform voltage, opening process driving voltage is flat
Peak voltage on platform can be further inhibited by TVS pipe, and same absorption resistance and Absorption Capacitance are in opening process
In play absorption, turn-on instant is equally able to suppress driving peak voltage, thus guarantee in entire turn on process drive electricity
Pointing peak is no more than the maximum gate-source voltage that metal-oxide-semiconductor allows.
When shutdown, Absorption Capacitance discharges into zero by absorption resistance.The reliability turned off in order to further increase, can be with
Further increasing the reliability of metal-oxide-semiconductor driving in such a way that grid source electrode increases negative pressure circuit.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the existing driving circuit for inhibiting peak voltage；
Fig. 2 is the first embodiment circuit diagram of the driving circuit of the utility model；
Fig. 3 is the second embodiment circuit diagram of the driving circuit of the utility model；
Fig. 4 is the 3rd embodiment circuit diagram of the driving circuit of the utility model；
Fig. 5 is the fourth embodiment circuit diagram of the driving circuit of the utility model.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract and attached drawing), except non-specifically chatting
It states, can be replaced by other alternative features that are equivalent or have similar purpose.That is, unless specifically stated, each feature is only
It is an example in a series of equivalent or similar characteristics.
Embodiment one
Fig. 2 gives the circuit diagram of the first embodiment of the power module ageing system of the utility model.It is described in Fig. 2
Inhibition driving voltage spike inhibition driving voltage spike metal-oxide-semiconductor driving circuit, including push-pull circuit 1, grid resistance R2
With RCD absorbing circuit 2, the push-pull circuit is made of NPN type triode Q1 and PNP type triode Q2, three pole of NPN type
The base stage of pipe Q1 is connected to driving pwm signal together with the base stage of the PNP type triode Q2, the NPN type triode Q1's
Collector connects power supply, and the collector of the PNP type triode Q2 connects the power supply ground level, the NPN type
The emitter of triode Q1 connect the push-pull circuit output end with the emitter of the PNP type triode Q2, described to recommend electricity
Road output end connects one end of the grid resistance, the grid of another termination metal-oxide-semiconductor S1 of the grid resistance R2, the MOS
The source electrode of pipe S1 and the ground level of push-pull circuit connect.RCD absorbing circuit is by absorption resistance R3, Absorption Capacitance C3 and TVS pipe D2
Composition, the cathode of TVS pipe D2 are connect with the grid of the metal-oxide-semiconductor S1, and the anode of the TVS pipe D2 is with the Absorption Capacitance C3's
One end connection, the other end of the Absorption Capacitance C3 connect with the source electrode of the metal-oxide-semiconductor S1, the absorption resistance R3 with it is described
TVS pipe D2 is connected in parallel.
It can be described to recommend electricity with grid source resistance R4 in parallel between the grid of metal-oxide-semiconductor S1 and the metal-oxide-semiconductor S1 source electrode
Road is the driving chip with push-pull output ability or the optocoupler with push-pull output ability.
Pass through the metal-oxide-semiconductor driving circuit of the inhibition driving voltage spike of the inhibition driving voltage spike of the utility model, MOS
When pipe is opened, the capacitor on the Absorption Capacitance is zero, opens the metal-oxide-semiconductor grid source electrode peak voltage at moment by TVS pipe clamper,
In opening process, as Absorption Capacitance voltage is charged to driving platform voltage, the peak voltage on platform can be further
It is inhibited by TVS pipe, to guarantee that driving voltage spike is no more than the maximum gate source that metal-oxide-semiconductor allows in entire turn on process
Pole tension.
Embodiment two
Fig. 3 gives the circuit diagram of the second embodiment of the power module ageing system of the utility model.It is described in Fig. 3
Inhibition driving voltage spike inhibition driving voltage spike metal-oxide-semiconductor driving circuit, including push-pull circuit 1, grid resistance R2
With RCD absorbing circuit 2, the push-pull circuit is made of NPN type triode Q1 and PNP type triode Q2, three pole of NPN type
The base stage of pipe Q1 is connected to driving pwm signal together with the base stage of the PNP type triode Q2, the NPN type triode Q1's
Collector connects power supply, and the collector of the PNP type triode Q2 connects the power supply ground level, the NPN type
The emitter of triode Q1 connect the push-pull circuit output end with the emitter of the PNP type triode Q2, described to recommend electricity
Road output end connects one end of the grid resistance, the grid of another termination of grid resistance R2 metal-oxide-semiconductor S1, institute
The ground level of the source electrode and push-pull circuit of stating metal-oxide-semiconductor S1 connects.The RCD absorbing circuit is by absorption resistance R3, Absorption Capacitance C3
It is formed with TVS pipe D2, one end of the Absorption Capacitance C3 is connect with the grid of the metal-oxide-semiconductor S1, and the Absorption Capacitance C3's is another
One end is connect with the cathode of the TVS pipe D2, and the anode of the TVS pipe D2 is connect with the source electrode of the metal-oxide-semiconductor S1, the absorption
Resistance R3 is connected in parallel with the TVS pipe D2.
It can be described with grid source resistance R4 in parallel between the grid of the metal-oxide-semiconductor S1 and the metal-oxide-semiconductor S1 source electrode
Push-pull circuit is the driving chip with push-pull output ability or the optocoupler with push-pull output ability.
Pass through the metal-oxide-semiconductor driving circuit of the inhibition driving voltage spike of the inhibition driving voltage spike of the utility model, MOS
When pipe is opened, the capacitor on the Absorption Capacitance is zero, opens the metal-oxide-semiconductor grid source electrode peak voltage at moment by TVS pipe clamper,
In opening process, as Absorption Capacitance voltage is charged to driving platform voltage, the peak voltage on platform can be further
It is inhibited by TVS pipe, to guarantee that driving voltage spike is no more than the maximum gate source that metal-oxide-semiconductor allows in entire turn on process
Pole tension.
Embodiment three
Fig. 4 gives the circuit diagram of the 3rd embodiment of the power module ageing system of the utility model.It is described in Fig. 4
Inhibition driving voltage spike inhibition driving voltage spike metal-oxide-semiconductor driving circuit, including push-pull circuit 1, grid resistance R2
With RCD absorbing circuit 2, the push-pull circuit is made of NPN type triode Q1 and PNP type triode Q2, three pole of NPN type
The base stage of pipe Q1 is connected to driving pwm signal together with the base stage of the PNP type triode Q2, the NPN type triode Q1's
Collector connects power supply, and the collector of the PNP type triode Q2 connects the power supply ground level, the NPN type
The emitter of triode Q1 connect the push-pull circuit output end with the emitter of the PNP type triode Q2, described to recommend electricity
Road output end connects one end of the grid resistance, the grid of another termination of grid resistance R2 metal-oxide-semiconductor S1, institute
The source electrode for stating metal-oxide-semiconductor S1 is connect with the cathode of the zener diode D1, the anode of the zener diode D1 and the power supply
The connection of power supply ground level, the negative pressure capacitor C2 are connected in parallel with the zener diode D1.The RCD absorbing circuit is by absorbing
Resistance R3, Absorption Capacitance C3 and TVS pipe D2 composition, the cathode of the TVS pipe D2 is connect with the grid of the metal-oxide-semiconductor S1, described
The anode of TVS pipe D2 is connect with one end of the Absorption Capacitance C3, the other end of the Absorption Capacitance C3 and the metal-oxide-semiconductor S1
Source electrode connection, the absorption resistance R3 is connected in parallel with the TVS pipe D2.
It can be described with grid source resistance R4 in parallel between the grid of the metal-oxide-semiconductor S1 and the metal-oxide-semiconductor S1 source electrode
Push-pull circuit is the driving chip with push-pull output ability or the optocoupler with push-pull output ability.
Pass through the metal-oxide-semiconductor driving circuit of the inhibition driving voltage spike of the inhibition driving voltage spike of the utility model, MOS
When pipe is opened, the capacitor on the Absorption Capacitance is zero, opens the metal-oxide-semiconductor grid source electrode peak voltage at moment by TVS pipe clamper,
In opening process, as Absorption Capacitance voltage is charged to driving platform voltage, the peak voltage on platform can be further
It is inhibited by TVS pipe, to guarantee that driving voltage spike is no more than the maximum gate source that metal-oxide-semiconductor allows in entire turn on process
Pole tension.In such a way that grid source electrode increases negative pressure circuit, increasing the reliability of metal-oxide-semiconductor shutdown, and then improves metal-oxide-semiconductor and drive
Dynamic reliability.
Example IV
Fig. 5 gives the circuit diagram of the fourth embodiment of the power module ageing system of the utility model.It is described in Fig. 5
Inhibition driving voltage spike inhibition driving voltage spike metal-oxide-semiconductor driving circuit, including push-pull circuit 1, grid resistance R2
With RCD absorbing circuit 2, the push-pull circuit is made of NPN type triode Q1 and PNP type triode Q2, three pole of NPN type
The base stage of pipe Q1 is connected to driving pwm signal together with the base stage of the PNP type triode Q2, the NPN type triode Q1's
Collector connects power supply, and the collector of the PNP type triode Q2 connects the power supply ground level, the NPN type
The emitter of triode Q1 connect the push-pull circuit output end with the emitter of the PNP type triode Q2, described to recommend electricity
Road output end connects one end of the grid resistance, the grid of another termination of grid resistance R2 metal-oxide-semiconductor S1, institute
The source electrode for stating metal-oxide-semiconductor S1 is connect with the cathode of the zener diode D1, the anode of the zener diode D1 and the power supply
The connection of power supply ground level, the negative pressure capacitor C2 are connected in parallel with the zener diode D1.The RCD absorbing circuit is by absorbing
Resistance R3, Absorption Capacitance C3 and TVS pipe D2 composition, the cathode of the TVS pipe D2 is connect with the grid of the metal-oxide-semiconductor S1, described
The anode of TVS pipe D2 is connect with one end of the Absorption Capacitance C3, the other end of the Absorption Capacitance C3 and the metal-oxide-semiconductor S1
Source electrode connection, the absorption resistance R3 is connected in parallel with the TVS pipe D2.
Increase a pull-up electricity in the metal-oxide-semiconductor driving circuit of the inhibition driving voltage spike for inhibiting driving voltage spike
R1 and pull-up capacitor C1 of resistance, described one end for pulling up capacitor C1 are connect with the power supply of the push-pull circuit, it is described on
The other end of capacitor C1 is drawn to connect with the source electrode of the metal-oxide-semiconductor S1, the pull-up resistor R1 is in parallel with the pull-up capacitor C1 to be connected
It connects.
It can be described with grid source resistance R4 in parallel between the grid of the metal-oxide-semiconductor S1 and the metal-oxide-semiconductor S1 source electrode
Push-pull circuit is the driving chip with push-pull output ability or the optocoupler with push-pull output ability.
In this circuit, the negative voltage between grid source electrode establishes stable negative pressure level by R1, C1.Pass through the utility model
Inhibition driving voltage spike inhibition driving voltage spike metal-oxide-semiconductor driving circuit, when metal-oxide-semiconductor is opened, the described absorption electricity
Capacitor in appearance is zero, opens the metal-oxide-semiconductor grid source electrode peak voltage at moment by TVS pipe wrench position, in opening process, with absorption
Capacitance voltage is charged to driving platform voltage, and the peak voltage on platform can be further inhibited by TVS pipe, from
And guarantee that driving voltage spike is no more than the maximum gate-source voltage that metal-oxide-semiconductor allows in entire turn on process.By in grid source electrode
The mode for increasing negative pressure circuit increases the reliability of metal-oxide-semiconductor shutdown, and then improves the reliability of metal-oxide-semiconductor driving.
Above description is only a specific implementation of the present invention, but the protection scope of the utility model is not limited to
In this, any change or replacement expected without creative work be should be covered within the scope of the utility model.
Therefore, the protection scope of the utility model should be determined by the scope of protection defined in the claims.
Claims (8)
1. it is a kind of inhibit driving voltage spike metal-oxide-semiconductor driving circuit, including push-pull circuit, RCD absorbing circuit, grid resistance and
Metal-oxide-semiconductor, it is characterised in that: the RCD absorbing circuit is made of absorption resistance R, Absorption Capacitance C and TVS pipe, the TVS pipe
Cathode is connect with the grid of the metal-oxide-semiconductor, and the anode of the TVS pipe is connect with one end of the Absorption Capacitance, the absorption electricity
The other end of appearance is connect with the source electrode of the metal-oxide-semiconductor, and the absorption resistance is connected in parallel with the TVS pipe.
2. inhibiting the metal-oxide-semiconductor driving circuit of driving voltage spike as described in claim 1, it is characterised in that: the absorption electricity
One end of appearance is connect with the grid of the metal-oxide-semiconductor, and the other end of the Absorption Capacitance is connect with the cathode of the TVS pipe, described
The anode of TVS pipe is connect with the source electrode of the metal-oxide-semiconductor, and the absorption resistance is connected in parallel with the TVS pipe.
3. inhibiting the metal-oxide-semiconductor driving circuit of driving voltage spike as described in claim 1, it is characterised in that: the grid electricity
Resistance is connected in series between the push-pull output end and the metal-oxide-semiconductor grid, alternatively, grid resistance is connected in series in the MOS
Between pipe source electrode and the push-pull circuit ground level.
4. inhibiting the metal-oxide-semiconductor driving circuit of driving voltage spike as claimed in claim 1 or 2, it is characterised in that: the MOS
A grid source in parallel resistance between the grid of pipe and the metal-oxide-semiconductor source electrode.
5. inhibiting the metal-oxide-semiconductor driving circuit of driving voltage spike as described in claim 1, it is characterised in that: described to recommend electricity
Road is the driving chip with push-pull output ability or the optocoupler with push-pull output ability.
6. inhibiting the metal-oxide-semiconductor driving circuit of driving voltage spike as described in claim 1, it is characterised in that: inhibiting to drive
Increase a zener diode and a negative pressure capacitor in the metal-oxide-semiconductor driving circuit of due to voltage spikes, the source electrode of metal-oxide-semiconductor and described steady
The cathode connection of diode is pressed, the anode of the zener diode is connect with power supply ground level, the negative pressure capacitor and institute
Zener diode is stated to be connected in parallel.
7. inhibiting the metal-oxide-semiconductor driving circuit of driving voltage spike as claimed in claim 6, it is characterised in that: inhibiting to drive
Increase a pull-up resistor and a pull-up capacitor in the metal-oxide-semiconductor driving circuit of due to voltage spikes, one end of the pull-up capacitor and
The power supply of the push-pull circuit connects, and the other end of the pull-up capacitor is connect with the source electrode of the metal-oxide-semiconductor, the pull-up
Resistance is connected in parallel with the pull-up capacitor.
8. inhibiting the metal-oxide-semiconductor driving circuit of driving voltage spike as described in claim 1, it is characterised in that: described to recommend electricity
Route NPN type triode and PNP type triode composition, the base stage of the base stage of the NPN type triode and the PNP type triode
It is connected to driving pwm signal together；
The collector of the NPN type triode connects the power supply of the push-pull circuit, the collector connection of the PNP type triode
The push-pull circuit ground level, the emitter of the NPN type triode connect with the emitter of the PNP type triode described in push away
Draw circuit output end；
The push-pull circuit output end connects one end of the grid resistance, another termination metal-oxide-semiconductor of the grid resistance
Grid, the source electrode of the metal-oxide-semiconductor connect with the push-pull circuit ground level.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109004813A (en) * | 2018-07-27 | 2018-12-14 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109004813A (en) * | 2018-07-27 | 2018-12-14 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike |
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