CN208623641U - A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike - Google Patents
A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike Download PDFInfo
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- CN208623641U CN208623641U CN201821219164.3U CN201821219164U CN208623641U CN 208623641 U CN208623641 U CN 208623641U CN 201821219164 U CN201821219164 U CN 201821219164U CN 208623641 U CN208623641 U CN 208623641U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 230000002401 inhibitory effect Effects 0.000 title claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims abstract description 48
- 230000005611 electricity Effects 0.000 claims abstract description 7
- 230000001629 suppression Effects 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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Abstract
The utility model discloses a kind of metal-oxide-semiconductor driving circuits for inhibiting negative drive voltage spike, including push-pull circuit, RCD clamp circuit, negative pressure circuit, RCD circuit, grid resistance R2 and metal-oxide-semiconductor S1, negative pressure electricity routing resistance R1, capacitor C1, capacitor C2 and zener diode D1 composition, the source electrode of metal-oxide-semiconductor S1 is connect with the cathode of the zener diode D1, the anode of zener diode D1 is connect with the power supply ground level, the capacitor C2 is connected in parallel with the zener diode D1, one end of capacitor C1 is connect with the power supply of the push-pull circuit, the other end of capacitor C1 is connect with the source electrode of the metal-oxide-semiconductor S1；The utility model positively and negatively drives peak voltage using the GS that the circuit can effectively reduce metal-oxide-semiconductor, improves reliably turning on and off for metal-oxide-semiconductor, has many advantages, such as that circuit structure is simple, reliable performance.
Description
Technical field
The utility model relates to power electronic product field, in particular to a kind of MOS for inhibiting negative drive voltage spike
Tube drive circuit.
Background technique
In order to inhibit the spike of power-type MOS driving voltage, it will usually TVS wink be added between metal-oxide-semiconductor grid and source electrode
State inhibits diode, in order to inhibit positive and negative driving voltage spike, can also select two-way TVS pipe to carry out clamper, as shown in Figure 1.
In the driving application of SIC metal-oxide-semiconductor, since its Ciss capacitor is smaller, when conducting, is easy to generate grid source electrode spike electricity
Pressure, between grid source electrode would generally a TVS Transient Suppression Diode in parallel carry out suppressor source electrode peak voltage, due to positive and negative driving
Due to voltage spikes requires clamper, and maximum voltage and minimum voltage absolute value that metal-oxide-semiconductor grid source electrode allows be not identical, and causing cannot
Two-way TVS pipe shown in FIG. 1 is directlyed adopt, and is needed using two independent TVS pipe series systems come to positive and negative driving voltage
Spike is inhibited.Since the maximum voltage that metal-oxide-semiconductor grid source electrode allows is limited, and in order to reduce conduction loss, and wish metal-oxide-semiconductor
Driving voltage platform voltage it is as high as possible, the difference between maximum voltage for causing driving voltage platform voltage and metal-oxide-semiconductor to allow
Other very little leads to the TVS pipe for being difficult to select a suitable voltage between two voltage class, it is necessary to optimize existing driving electricity
Road.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of metal-oxide-semiconductor drivings for inhibiting negative drive voltage spike
Circuit can effectively solve the problem that deficiency in the prior art.
The utility model is achieved through the following technical solutions:
The beneficial effects of the utility model are: a kind of metal-oxide-semiconductor driving circuit for inhibiting negative drive voltage spike, including push away
Draw circuit, RCD clamp circuit, negative pressure circuit, RCD circuit, grid resistance R2 and metal-oxide-semiconductor S1, the negative pressure electricity routing resistance R1,
The cathode of capacitor C1, capacitor C2 and zener diode D1 composition, the source electrode of the metal-oxide-semiconductor S1 and the zener diode D1 connect
It connects, the anode of the zener diode D1 is connect with the power supply ground level, the capacitor C2 and the zener diode
D1 is connected in parallel, and one end of the capacitor C1 is connect with the power supply of the push-pull circuit, the other end of the capacitor C1 with
The source electrode of the metal-oxide-semiconductor S1 connects, and the resistance R1 is connected in parallel with the capacitor C1；
The RCD clamp circuit is made of resistance R3, capacitor C3 and diode D2, the cathode of the diode D2 with it is described
The grid of metal-oxide-semiconductor connects, and the anode of the diode D2 is connect with one end of the capacitor C3, the other end of the capacitor C3 and
The source electrode of the metal-oxide-semiconductor connects, and the one end the resistance R3 is connect with the anode of diode D2, the other end of the resistance R3 and institute
State the connection of push-pull circuit ground level.
The diode D2 is TVS Transient Suppression Diode as a preferred technical solution,.
The grid resistance is connected in series to the source electrode of the metal-oxide-semiconductor and described recommends electricity as a preferred technical solution,
The ground level on road.
The push-pull circuit is for the driving chip with push-pull output ability or with push-pull output as a preferred technical solution,
The driving optocoupler of ability.
In practical application, in order to realize optimal driving voltage peak restrained effect, the cathode by diode D2 is needed to use up
The grid of possible close metal-oxide-semiconductor, source electrode of the one end capacitor C3 being connected with metal-oxide-semiconductor source electrode as close to metal-oxide-semiconductor.
When stable state, power supply is built by resistance R1, capacitor C1, capacitor C2 and zener diode D1 at the both ends capacitor C2
Found stable negative level.Since resistance R3 connects, stable driving negative level is kept on capacitor C3, in metal-oxide-semiconductor turn off process,
Once metal-oxide-semiconductor grid source electrode negative voltage spike is lower than the negative level, then diode D2 is connected, by metal-oxide-semiconductor grid source electrode negative voltage
Spike clamper is in negative level, to ensure that the negative-going pulse spike of metal-oxide-semiconductor is not exceeded.In order to inhibit to cause because of circuit trace
C3 capacitance voltage concussion, resistance R3 needs to select suitable resistance value here.
The push-pull circuit is made of NPN type triode Q1 and PNP type triode Q2 as a preferred technical solution, institute
The base stage for stating NPN type triode Q1 is connected to driving pwm signal, the NPN type together with the base stage of the PNP type triode Q2
The collector of triode Q1 connects the power supply of the push-pull circuit, recommends described in the collector connection of the PNP type triode Q2
Circuit ground level；
The emitter of NPN type triode Q1 connect the push-pull circuit output with the emitter of the PNP type triode Q2
End, the push-pull circuit output end connect one end of the grid resistance R2, another termination MOS of the grid resistance R2
The grid of pipe S1.
Diode D2 can be substituted with TVS pipe, and the breakdown voltage of the TVS pipe needs to be less than metal-oxide-semiconductor driving platform voltage
The sum of with the driving negative pressure absolute value, the driving circuit can also inhibit positive drive voltage spike.When metal-oxide-semiconductor is open-minded
When, the negative level voltage that the capacitance voltage on the capacitor C3 is kept constant opens the metal-oxide-semiconductor grid source electrode peak voltage quilt at moment
TVS pipe and capacitor C3 clamper together.Due to joined the negative pressure circuit of diode D1 and capacitor C2 composition, MOS in driving circuit
For pipe drive level there are a negative level, metal-oxide-semiconductor shutdown is more reliable.
The utility model positively and negatively drives peak voltage using the GS that the circuit can effectively reduce metal-oxide-semiconductor, improves
Reliably turning on and off for metal-oxide-semiconductor, has many advantages, such as that circuit structure is simple, reliable performance.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
The existing driving circuit for inhibiting the positive undershoot of driving voltage of Fig. 1；
Fig. 2 is the first embodiment circuit diagram of the driving circuit of the utility model.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract and attached drawing), except non-specifically chatting
It states, can be replaced by other alternative features that are equivalent or have similar purpose.That is, unless specifically stated, each feature is only
It is an example in a series of equivalent or similar characteristics.
Embodiment one
Fig. 2 gives the circuit diagram of the first embodiment of the power module ageing system of the utility model.It is a kind of in Fig. 2
Metal-oxide-semiconductor driving circuit, including push-pull circuit, negative pressure circuit, RCD circuit, grid resistance R2 and metal-oxide-semiconductor S1, the push-pull circuit
It is made of NPN type triode Q1 and PNP type triode Q2, the base stage of the NPN type triode Q1 and the PNP type triode Q2
Base stage be connected to driving pwm signal together, the collector of the NPN type triode Q1 connects the power supply of the push-pull circuit,
The collector of the PNP type triode Q2 connects the push-pull circuit ground level, the emitter of the NPN type triode Q1 and institute
The emitter for stating PNP type triode Q2 connects the push-pull circuit output end, and the push-pull circuit output end connects the grid
One end of resistance R2, the grid of another termination of grid resistance R2 metal-oxide-semiconductor S1, the negative pressure electricity routing resistance R1,
The cathode of capacitor C1, capacitor C2 and zener diode D1 composition, the source electrode of the metal-oxide-semiconductor S1 and the zener diode D1 connect
It connects, the anode of the zener diode D1 is connect with the power supply ground level, the capacitor C2 and the zener diode
D1 is connected in parallel, and one end of the capacitor C1 is connect with the power supply of the push-pull circuit, the other end of the capacitor C1 with
The source electrode of the metal-oxide-semiconductor S1 connects, and the resistance R1 is connected in parallel with the capacitor C1.
RCD clamp circuit is made of resistance R3, capacitor C3 and diode D2, the cathode and the MOS of the diode D2
The grid of pipe connects, and the anode of the diode D2 is connect with one end of the capacitor C3, the other end of the capacitor C3 and institute
State the source electrode connection of metal-oxide-semiconductor, the one end the resistance R3 connect with the anode of diode D2, the other end of the resistance R3 with it is described
The connection of push-pull circuit ground level.
In the present embodiment, diode D2 is TVS pipe.It can be in parallel one between the grid of metal-oxide-semiconductor S1 and metal-oxide-semiconductor S1 source electrode
A grid source resistance R4, push-pull circuit are the driving chip with push-pull output ability or the optocoupler with push-pull output ability.
When stable state, power supply is built by resistance R1, capacitor C1, capacitor C2 and zener diode D1 at the both ends capacitor C2
Found stable negative level.Since resistance R3 connects, stable driving negative level is kept on capacitor C3, in metal-oxide-semiconductor turn off process,
Once metal-oxide-semiconductor grid source electrode negative voltage spike is lower than the negative level, then diode D2 is connected, by metal-oxide-semiconductor grid source electrode negative voltage
Spike clamper is in negative level, to ensure that the negative-going pulse spike of metal-oxide-semiconductor is not exceeded.As a preferred option, two pole
Pipe D2 can be substituted with TVS pipe, and the breakdown voltage of the TVS pipe needs to be less than metal-oxide-semiconductor driving platform voltage and the driving is negative
The sum of absolute value is pressed, the driving circuit can also inhibit positive drive voltage spike.When metal-oxide-semiconductor is opened, the capacitor C3
On the negative level voltage that keeps constant of capacitance voltage, open the metal-oxide-semiconductor grid source electrode peak voltage at moment by TVS pipe and capacitor C3
Clamper together.Due to joined the negative pressure circuit of diode D1 and capacitor C2 composition in driving circuit, metal-oxide-semiconductor drive level exists
One negative level, metal-oxide-semiconductor shutdown are more reliable.
Above description is only a specific implementation of the present invention, but the protection scope of the utility model is not limited to
In this, any change or replacement expected without creative work be should be covered within the scope of the utility model.
Therefore, the protection scope of the utility model should be determined by the scope of protection defined in the claims.
Claims (5)
1. a kind of metal-oxide-semiconductor driving circuit for inhibiting negative drive voltage spike, it is characterised in that: including push-pull circuit, RCD clamper
Circuit, negative pressure circuit, RCD circuit, grid resistance R2 and metal-oxide-semiconductor S1, the negative pressure electricity routing resistance R1, capacitor C1, capacitor C2
It is formed with zener diode D1, the source electrode of the metal-oxide-semiconductor S1 is connect with the cathode of the zener diode D1, two pole of pressure stabilizing
The anode of pipe D1 is connect with power supply ground level, and the capacitor C2 is connected in parallel with the zener diode D1, the capacitor
One end of C1 is connect with the power supply of the push-pull circuit, and the source electrode of the other end of the capacitor C1 and the metal-oxide-semiconductor S1 connect
It connects, the resistance R1 is connected in parallel with the capacitor C1；
The RCD clamp circuit is made of resistance R3, capacitor C3 and diode D2, the cathode and the MOS of the diode D2
The grid of pipe connects, and the anode of the diode D2 is connect with one end of the capacitor C3, the other end of the capacitor C3 and institute
State the source electrode connection of metal-oxide-semiconductor, the one end the resistance R3 connect with the anode of diode D2, the other end of the resistance R3 with it is described
The connection of push-pull circuit ground level.
2. inhibiting the metal-oxide-semiconductor driving circuit of negative drive voltage spike as described in claim 1, it is characterised in that: described two
Pole pipe D2 is TVS Transient Suppression Diode.
3. driving circuit as described in claim 1, it is characterised in that: the grid resistance is connected in series to the metal-oxide-semiconductor
The ground level of source electrode and the push-pull circuit.
4. inhibiting the metal-oxide-semiconductor driving circuit of negative drive voltage spike as described in claim 1, it is characterised in that: described to push away
Drawing circuit is the driving chip with push-pull output ability or the driving optocoupler with push-pull output ability.
5. inhibiting the metal-oxide-semiconductor driving circuit of negative drive voltage spike as described in claim 1, it is characterised in that: described to push away
It draws circuit to be made of NPN type triode Q1 and PNP type triode Q2, the base stage of the NPN type triode Q1 and the positive-negative-positive three
The base stage of pole pipe Q2 is connected to driving pwm signal together, and the collector of the NPN type triode Q1 connects the push-pull circuit
The collector of power supply, the PNP type triode Q2 connects the push-pull circuit ground level；
The emitter of the NPN type triode Q1 connect the push-pull circuit output with the emitter of the PNP type triode Q2
End, the push-pull circuit output end connect one end of the grid resistance R2, another termination MOS of the grid resistance R2
The grid of pipe S1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821219164.3U CN208623641U (en) | 2018-07-27 | 2018-07-27 | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821219164.3U CN208623641U (en) | 2018-07-27 | 2018-07-27 | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike |
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| CN208623641U true CN208623641U (en) | 2019-03-19 |
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|---|---|---|---|
| CN201821219164.3U Withdrawn - After Issue CN208623641U (en) | 2018-07-27 | 2018-07-27 | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649938A (en) * | 2018-07-27 | 2018-10-12 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike |
| CN110830014A (en) * | 2019-11-14 | 2020-02-21 | 西北工业大学 | SiC MOSFET drive circuit |
| CN111987890A (en) * | 2020-07-30 | 2020-11-24 | 西北工业大学 | Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit |
-
2018
- 2018-07-27 CN CN201821219164.3U patent/CN208623641U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649938A (en) * | 2018-07-27 | 2018-10-12 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike |
| CN108649938B (en) * | 2018-07-27 | 2024-08-30 | 深圳英飞源技术有限公司 | MOS tube driving circuit for inhibiting negative driving voltage peak |
| CN110830014A (en) * | 2019-11-14 | 2020-02-21 | 西北工业大学 | SiC MOSFET drive circuit |
| CN110830014B (en) * | 2019-11-14 | 2021-12-03 | 西北工业大学 | SiC MOSFET drive circuit |
| CN111987890A (en) * | 2020-07-30 | 2020-11-24 | 西北工业大学 | Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit |
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Granted publication date: 20190319 Effective date of abandoning: 20240830 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190319 Effective date of abandoning: 20240830 |