CN103199677A - One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit - Google Patents
One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit Download PDFInfo
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Abstract
The invention discloses a one-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit. The one-way isolated type MOSFET drive circuit comprises a level transformation and pulse drive circuit, a pulse transformer, a magnetic reset circuit and an acceleration turn-off circuit. The level transformation and pulse drive circuit is used for level transformation and power amplification on input pulse signals so as to drive the pulse transformer to work. The magnetic reset circuit is used for enabling the pulse transformer to carry out reliable magnetic reset. The acceleration turn-off circuit is used for accelerating turn-on and turn-off of a MOSFET tube, and comprises a capacitor, a second resistor, a third resistor and a PNP type triode. One end of the capacitor is connected with an auxiliary edge synonym end of the pulse transformer, the other end of the capacitor is connected with the second resistor, and the other end of the second resistor is connected with a grid electrode of the MOSFET tube. The third resistor is connected with the capacitor in parallel, a collector electrode of the PNP type triode is connected with an auxiliary edge non-synonym end of the pulse transformer, a base electrode of the PNP type triode and the capacitor are connected with one end of the second resistor, and an emitting electrode of the PNP type triode is connected with the grid electrode of the MOSFET tube.
Description
Technical field
The present invention relates to power electronics and drive applied technical field, relate in particular to the MOSFET drive circuit in the electric power management circuit, is a kind of single channel isolated form MOSFET drive circuit concretely.
Background technology
MOSFET belongs to voltage-controlled device, its input impedance height, and required static drive power is very little.Yet owing to exist parasitic capacitance between each utmost point, in the process of turning on and off, particularly in high frequency applications, drive circuit must be able to carry out quick charge to its parasitic capacitance.Therefore driving pulse should have enough steep rising and decrease speed and postpone little.Can provide enough big instantaneous peak current when opening, make to open to postpone and the Miller platform time enough lacks, in the time that requires, finish discharging and recharging power tube input capacitance Ciss; Can improve turn-off speed for gate charge provides the low-resistance discharge loop during shutoff.
Fig. 1 is existing a kind of asymmetrical half-bridge magnetic coupling drive circuit for the big occasion of change in duty cycle scope.As shown in the figure; be connected to form totem output by NPN type triode and positive-negative-positive transistor collector; the two ends of NPN type triode and NPN type triode are two identical fly-wheel diodes of inverse parallel respectively; totem output connects a former limit capacitance positive terminal; the former limit capacitance other end connects the former limit of high-frequency isolation transformer; the high-frequency isolation transformer secondary connects a secondary electric capacity; secondary capacitance cathode end connects the grid input resistance; the two ends parallel diode of grid input resistance; voltage stabilizing didoe one end is connected between secondary electric capacity and the grid input resistance; the other end connects the power MOSFET tube source electrode, is connected protective resistance between MOSFET tube grid and source electrode.Outputting drive voltage remains unchanged, and the variation with the input signal duty ratio does not change, and is simple in structure, with low cost.
In the application scenario that needs the single channel isolation drive, adopt the pulse transformer buffer circuit usually, but traditional pulse transformer buffer circuit, it drives duty ratio need be lower than 0.5.
Referring to Fig. 1, the collector electrode of NPN type triode Tr1 meets positive supply Vg, and the emitter of NPN type triode Tr1 links to each other with the collector electrode of positive-negative-positive triode Tr2, forms totem output, and input current is played amplification, is used for matching voltage, improves driving force.At two identical sustained diode 1 of the two ends of the NPN type triode Tr1 that forms totem output and NPN type triode Tr1 difference inverse parallel, D2, when inductive load, play the effect of afterflow.The positive terminal that connects a former limit capacitance C1 at the totem output point, the other end of former limit capacitance C1 links to each other with the former limit of high-frequency isolation transformer T, be used for stoping DC component to pass through, avoid high-frequency isolation transformer T dc magnetization and saturated, high-frequency isolation transformer T is generally magnet ring or the magnetic jar of high frequency, high magnetic rate.Connect a secondary capacitor C 2 at the secondary of high-frequency isolation transformer T, the positive terminal of secondary capacitor C 2 connects grid input resistance R1, when the turn ratio of transformer is used for reappearing the voltage of former limit capacitance C1 during for 1:1.Grid input resistance R1 connects power MOSFET tube Q grid, at the two ends of grid input resistance R1 parallel diode D4, the Low ESR discharge channel is provided for power MOSFET tube Q input capacitance, accelerates the input capacitance discharge, thereby accelerates the shutoff of MOSFET pipe Q.Between secondary capacitor C 2 and grid input resistance R1, connect voltage stabilizing didoe D3 one end, the other end of voltage stabilizing didoe D3 links to each other with power MOSFET tube Q source electrode, at forward conduction in the time, make output positive voltage vibration spike be limited in the magnitude of voltage at voltage stabilizing didoe D3 two ends, give the secondary capacitor C 2 chargings by voltage stabilizing didoe D3 in the reverse-conducting time.Between the grid of MOSFET pipe Q and source electrode, connect protective resistance R2; because good insulation preformance between the grid of power MOSFET tube Q and the source electrode; capacitance is very little again; very little some charge inducings just can cause very high voltage; can discharge by protective resistance R2; prevent electrostatic breakdown, play a protective role.
The MOSFET drive circuit that Fig. 2 can turn-off fast for existing another kind of isolated form, it comprises totem output circuit, transformer T, circuit for generating negative voltage and MOSFET pipe, and the output point of described totem output circuit is the anodal and former limit of transformer T end of the same name through capacitance C1; Transformer T secondary non-same polarity is inserted in connect successively secondary capacitor C 2, diode D4, electrochemical capacitor C3, resistance R 1, MOSFET pipe back of transformer T secondary end of the same name; Voltage stabilizing didoe D3 is connected in the two ends of transformer T secondary; The base stage of triode Tr3 links to each other with the positive pole of secondary capacitor C 2, and collector electrode links to each other with diode D4 negative electrode, and emitter links to each other with transformer T secondary non-same polarity; Diode D6 is connected in reverse parallel in the two ends of grid input resistance R1; Voltage-stabiliser tube D5 is connected in parallel on the two ends of electrochemical capacitor C3; Resistance R 2 is connected between the grid and source electrode of power MOSFET tube.This circuit is applicable to that the anti-interference to drive circuit requires height, needs to turn-off fast and the bigger occasion of change in duty cycle scope.
But the inventor finds that in realizing process of the present invention there is following deficiency in above-mentioned two kinds of available circuits:
1, input lacks level-conversion circuit, causes the pwm signal level to equate with driving power Vcc;
2, can to cause PWM to open signal interim for voltage stabilizing didoe D3, and the drive current voltage-stabiliser tube D3 that mainly flows through, rather than the parasitic capacitance of MOSFET cause the drive circuit loss to increase, and MOSFET opens slowly, and the Miller capacitance effect is more outstanding.
Summary of the invention
The embodiment of the invention provides a kind of single channel isolation MOSFET drive circuit, and it drives duty ratio can be up to 0.9, the function that has level conversion, power amplification simultaneously and turn on and off fast.
In order to achieve the above object, the embodiment of the invention discloses a kind of single channel isolated form MOSFET drive circuit, comprise level translation and pulse driving circuit, pulse transformer, magnetic reset circuit and accelerate breaking circuit; Wherein, described level translation and pulse driving circuit are used for the pulse signal of input is carried out level translation and power amplification, to drive described pulse transformer work; Described magnetic reset circuit is used for making the reliable magnetic reset of described pulse transformer, and it comprises the series loop that a diode and first resistance are formed, and the negative electrode of described diode connects the secondary end of the same name of described pulse transformer, and anode connects described first resistance; The described first resistance other end connects the secondary non-same polarity of described pulse transformer; Described acceleration breaking circuit is used for accelerating turning on and off of described MOSFET pipe, and it comprises an electric capacity, second resistance, the 3rd resistance and a positive-negative-positive triode; One end of described electric capacity is connected with the secondary end of the same name of described pulse transformer, and the other end connects described second resistance, and the other end of described second resistance connects the grid of described MOSFET pipe; Described the 3rd resistance is in parallel with described electric capacity; The collector electrode of described positive-negative-positive triode links to each other with the secondary non-same polarity of described pulse transformer, and base stage is connected described second resistance with described electric capacity a end links to each other, and emitter links to each other with the grid of described MOSFET pipe.
Further, described level translation and pulse driving circuit comprise two-stage common emitter amplifying circuit and recommend pulse amplifying circuit; Wherein, first order amplifying circuit in the described two-stage common emitter amplifying circuit is promoted to driving voltage and anti-phase with the pulse signal voltage of input, second level amplifying circuit is anti-phase with described driving voltage, and obtaining the consistent and amplitude of pulse voltage phase place with described input is the driving signal of VCC; The described pulse amplifying circuit of recommending is made up of NPN and PNP triode, described driving signal is further amplified, to drive described pulse transformer work.
Further, described level translation and pulse driving circuit comprise level-conversion circuit and recommend pulse amplifying circuit; Wherein, described level-conversion circuit is made up of comparator or high speed operation amplifier, and its anode connects the pulse signal of described input, and negative terminal is threshold voltage, and being output as the consistent and amplitude of pulse signal phase place with described input is the driving signal of VCC; The described pulse amplifying circuit of recommending is made up of NPN and PNP triode, described driving signal is further amplified, to drive described pulse transformer work.
Further, a voltage-stabiliser tube in parallel between the grid of described MOSFET pipe and the source electrode is used for voltage stabilizing.
Further, the pulse signal of described input comprises pwm signal and PFM signal.
The single channel isolated form MOSFET drive circuit of the embodiment of the invention can be isolated the single channel drive circuit of output duty cycle more than 0.9, particularly the power MOSFET driving circuit that can use in high frequency, wide duty ratio, low cost, high reliability circuit.And circuit structure is simple and reliable, and integrated level is higher, and the turn-on and turn-off of driving power switching tube fast, adopted isolation drive, make performance comparatively stable, can isolate the driving signal of output duty cycle more than 0.9, and the level of output can not change with the variation of duty ratio.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those skilled in the art, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is existing a kind of for the structural representation of change in duty cycle scope than the asymmetrical half-bridge magnetic coupling drive circuit of big occasion;
The structural representation of the MOSFET drive circuit that Fig. 2 can turn-off fast for existing another kind of isolated form;
Fig. 3 is the structural representation of the single channel isolated form MOSFET drive circuit of the embodiment of the invention;
Fig. 4 is the structural representation of a specific embodiment of single channel isolated form MOSFET drive circuit of the present invention;
Fig. 5 is the structural representation of another specific embodiment of single channel isolated form MOSFET drive circuit of the present invention;
Fig. 6 is 0.9 o'clock drive waveforms figure for the duty ratio of single channel isolated form MOSFET drive circuit shown in Figure 5;
Fig. 7 is the structural representation of another specific embodiment of single channel isolated form MOSFET drive circuit of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Fig. 3 is the structural representation of the single channel isolated form MOSFET drive circuit of the embodiment of the invention.As shown in the figure, comprise level translation and pulse driving circuit 11, pulse transformer 12, magnetic reset circuit 13 and acceleration breaking circuit 14; Wherein, described level translation and pulse driving circuit 11 are used for the pulse signal of input is carried out level translation and power amplification, to drive described pulse transformer 12 work;
Described magnetic reset circuit 13 is used for making described pulse transformer 12 reliable magnetic resets, it comprises the series loop that a diode D1 and first resistance R 1 are formed, the negative electrode of described diode D1 connects the secondary end of the same name of described pulse transformer 12, and anode connects described first resistance R 1; Described first resistance R, 1 other end connects the secondary non-same polarity of described pulse transformer 12;
Described acceleration breaking circuit 14 is used for accelerating turning on and off of described MOSFET pipe, and it comprises a capacitor C 1, second resistance R 2, the 3rd resistance R 3 and a positive-negative-positive triode S1; One end of described capacitor C 1 is connected with the secondary end of the same name of described pulse transformer 12, and the other end connects described second resistance R 2, and described second resistance R, 2 other ends connect the grid of MOSFET pipe; Described the 3rd resistance R 3 is in parallel with described capacitor C 1; The collector electrode of described positive-negative-positive triode S1 links to each other with the secondary non-same polarity of described pulse transformer 12, and base stage is connected described second resistance R 2 with described capacitor C 1 a end links to each other, and emitter links to each other with the grid of described MOSFET pipe.
In the present embodiment, the pulse signal of described input comprises pwm signal and PFM signal.
In the present embodiment, a voltage-stabiliser tube ZD1 in parallel also between the grid of described MOSFET pipe and the source electrode is used for voltage stabilizing and the anti-phase earial drainage that may exist loop is provided.
In one embodiment, as shown in Figure 4, described level translation and pulse driving circuit 11 comprise two-stage common emitter amplifying circuit 111 and recommend pulse amplifying circuit 112; Wherein, first order amplifying circuit in the described two-stage common emitter amplifying circuit 111 is promoted to driving voltage and anti-phase with the pulse signal voltage of input, second level amplifying circuit is anti-phase with described driving voltage, and obtaining the consistent and amplitude of pulse voltage phase place with described input is the driving signal of VCC; The described pulse amplifying circuit 112 of recommending is made up of NPN and PNP triode, described driving signal is further amplified, to drive described pulse transformer work.
In the present embodiment, NPN triode S1 in the two-stage common emitter amplifying circuit 111 is with PWM(or the PFM of input) signal boosts to driving voltage VCC and anti-phase, NPN triode S2 is that the pwm signal of VCC is anti-phase again with anti-phase level, obtain and the PWM(that imports or PFM) PWM(or the PFM of signal homophase) drive signal, recommend pulse amplifying circuit 112 and a pair of NPN and PNP pipe S3 and S4 are made of, this is recommended pulse amplifying circuit 112 and is used for pulse transformer work.In this circuit, R4 is used for current limliting, and R5 is used for preventing that S1 from misleading that C3 then is used for accelerating the switch of push-pull circuit.Other devices and function thereof in the level translation of this embodiment and the pulse driving circuit 11 are well known to those skilled in the art, so repeat no more.
In another embodiment, as shown in Figure 5, described level translation and pulse driving circuit 11 ' comprise level-conversion circuit 111 ' and recommend pulse amplifying circuit 112 '; Wherein, described level-conversion circuit 111 ' is made up of comparator or high speed operation amplifier, and its anode connects the pulse signal of described input, and negative terminal is threshold voltage, and being output as the consistent and amplitude of pulse signal phase place with described input is the driving signal of VCC; The described pulse amplifying circuit 112 ' of recommending is made up of NPN and PNP triode, described driving signal is further amplified, to drive described pulse transformer work.
In the present embodiment, by the level-conversion circuit 111 ' that comparator or high speed operation amplifier are formed, its anode is PWM(or the PFM of input) signal, wherein R4 is used for preventing that the amplifier input is unsettled; Its negative terminal is threshold voltage, and this voltage can be by increasing variable resistor or changing resistance value and regulate, and wherein C1 is used for flat ripple; It is output as and imports the driving signal that the homophase amplitude is VCC, and the pulse power discharge circuit is made of pipe S3 and S4 a pair of NPN and PNP, and this push-pull amplifier circuit is used for pulse transformer work.The level translation of this embodiment and other devices and the function thereof in the pulse driving circuit 11 ' are well known to those skilled in the art, so repeat no more.
In the above-described embodiments, the isolation drive of accelerating in the breaking circuit has partly adopted speed-up capacitor, when realizing the quick conducting of MOSFET, when being output as low level, accelerate to release the open-minded of triode, make the energy of MOSFET grid source electrode equivalent input capacitance release fast, thereby guaranteed that switching tube can turn-off fast.In addition, also have the magnetic reset circuit that is composed in series by resistance and diode at isolation drive part front end, to guarantee to drive duty ratio when 0.9 left and right sides, pulse transformer is magnetic reset reliably.The energy of MOSFET grid source electrode equivalent input capacitance release finish after, the triode of releasing plays the effect of magnetic reset circuit.
Specific embodiment one:
The single channel isolated form MOSFET drive circuit of the embodiment of the invention has been successfully applied in the electronic ballast of high intensity gas discharge lamp, at widely used digital control electric ballast, its drive circuit adopts circuit proposed by the invention, and its physical circuit as shown in Figure 4.Level translation and pulse driving circuit only need four low-power transistors and conventional, electric-resistance, electric capacity, whole drive circuit is except pulse transformer, other devices are the extremely strong device commonly used of versatility, circuit structure is simple, cost is low and reliability is high, by experiment, this circuit still can reliably working under the 500kHz frequency, has realized isolation drive scheme low-cost, high reliability.
Specific embodiment two:
The single channel isolated form MOSFET drive circuit of the embodiment of the invention also is used in the pwm converter of electric motor car motor, this rotor-exciting converter using single channel Buck circuit, its drive circuit as shown in Figure 5, working waveform figure is as shown in Figure 6.This level-conversion circuit utilizes a comparator to get final product PWM(or the PFM of compatible 3.3V and 5V) the signal input, have extremely strong antijamming capability, wherein, comparator adopts LM311 to realize, and pulse transformer is driven by the push-pull circuit that S1 and S2 constitute.According to work wave shown in Figure 6, when output duty cycle reached 0.9, drive circuit works was reliable and stable.Whole drive circuit is except pulse transformer, and other devices are the extremely strong device commonly used of versatility, and circuit structure is simple, and cost is low and reliability is high.
Specific embodiment three,
The single channel isolated form MOSFET drive circuit of the embodiment of the invention has been successfully applied in the charging and discharging of accumulator circuit, at widely used two-way Buck-Boost charge-discharge circuit, its drive circuit adopts circuit proposed by the invention, and its physical circuit as shown in Figure 7.This circuit adopts integrated drive chips UCC27324 can realize independent input and the isolation drive of PMW-IN1 and PWM-IN2, also realized the level translation function simultaneously, wherein two-way Buck-Boost circuit switching tube is over the ground directly driven by UCC27324, comprises that level translation and power drive finish by it.The unsettled switching tube of two-way Buck-Boost circuit then adds interlock circuit of the present invention by pulse transformer and drives, and wherein, pulse transformer is driven by UCC27324.This electric circuit characteristic is, two-way drives signal dutyfactor respectively can be up to more than 0.9, has isolation drive, characteristics such as simple in structure simultaneously.
The scope of the high level of the pulse signal of the single channel isolated form MOSFET drive circuit of the embodiment of the invention can realize from Vref to driving voltage Vcc self adaptation; Secondly, the secondary series connection speed-up capacitor of pulse transformer plays and accelerates to open and the effect of capacitance; The series loop of being made up of diode and resistance in parallel simultaneously is as discharge loop.When controller output electronegative potential, secondary coil discharges rapidly by this loop, and to guarantee driving duty ratio greater than 0.5 o'clock, pulse transformer is magnetic reset reliably; And, speed-up capacitor and accelerate the process that turns on and off that breaking circuit can be accelerated MOSFET, when opening MOSFET, speed-up capacitor is given the quick charge of driven MOSFET grid equivalent capacity by R2, makes the very fast conducting of MOSFET.When driving signals reverse, the voltage of speed-up capacitor can not suddenly change, make to release base voltage moment of triode far below emitter voltage, thus the quick saturation conduction of the triode of releasing, the discharge of MOSFET grid equivalent capacity, then MOSFET turn-offs.
The single channel isolated form MOSFET drive circuit of the embodiment of the invention can be isolated the single channel drive circuit of output duty cycle more than 0.9, particularly the power MOSFET driving circuit that can use in high frequency, wide duty ratio, low cost, high reliability circuit.And circuit structure is simple and reliable, and integrated level is higher, and the turn-on and turn-off of driving power switching tube fast, adopted isolation drive, make performance comparatively stable, can isolate the driving signal of output duty cycle more than 0.9, and the level of output can not change with the variation of duty ratio.
Those skilled in the art should understand that embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt complete hardware embodiment, complete software embodiment or in conjunction with the form of the embodiment of software and hardware aspect.And the present invention can adopt the form of the computer program of implementing in one or more computer-usable storage medium (including but not limited to magnetic disc store, CD-ROM, optical memory etc.) that wherein include computer usable program code.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; and be not intended to limit the scope of the invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. a single channel isolated form MOSFET drive circuit is characterized in that, comprises level translation and pulse driving circuit, pulse transformer, magnetic reset circuit and accelerates breaking circuit; Wherein,
Described level translation and pulse driving circuit are used for the pulse signal of input is carried out level translation and power amplification, to drive described pulse transformer work;
Described magnetic reset circuit is used for making the reliable magnetic reset of described pulse transformer, and it comprises the series loop that a diode and first resistance are formed, and the negative electrode of described diode connects the secondary end of the same name of described pulse transformer, and anode connects described first resistance; The described first resistance other end connects the secondary non-same polarity of described pulse transformer;
Described acceleration breaking circuit is used for accelerating turning on and off of described MOSFET pipe, and it comprises an electric capacity, second resistance, the 3rd resistance and a positive-negative-positive triode; One end of described electric capacity is connected with the secondary end of the same name of described pulse transformer, and the other end connects described second resistance, and the other end of described second resistance connects the grid of described MOSFET pipe; Described the 3rd resistance is in parallel with described electric capacity; The collector electrode of described positive-negative-positive triode links to each other with the secondary non-same polarity of described pulse transformer, and base stage is connected described second resistance with described electric capacity a end links to each other, and emitter links to each other with the grid of described MOSFET pipe.
2. single channel isolated form MOSFET drive circuit according to claim 1 is characterized in that, described level translation and pulse driving circuit comprise two-stage common emitter amplifying circuit and recommend pulse amplifying circuit; Wherein,
First order amplifying circuit in the described two-stage common emitter amplifying circuit is promoted to driving voltage and anti-phase with the pulse signal voltage of input, second level amplifying circuit is anti-phase with described driving voltage, and obtaining the consistent and amplitude of pulse voltage phase place with described input is the driving signal of VCC;
The described pulse amplifying circuit of recommending is made up of NPN and PNP triode, described driving signal is further amplified, to drive described pulse transformer work.
3. single channel isolated form MOSFET drive circuit according to claim 1 is characterized in that, described level translation and pulse driving circuit comprise level-conversion circuit and recommend pulse amplifying circuit; Wherein,
Described level-conversion circuit is made up of comparator or high speed operation amplifier, and its anode connects the pulse signal of described input, and negative terminal is threshold voltage, and being output as the consistent and amplitude of pulse signal phase place with described input is the driving signal of VCC;
The described pulse amplifying circuit of recommending is made up of NPN and PNP triode, described driving signal is further amplified, to drive described pulse transformer work.
4. single channel isolated form MOSFET drive circuit according to claim 1 is characterized in that, a voltage-stabiliser tube in parallel between the grid of described MOSFET pipe and the source electrode is used for voltage stabilizing.
5. according to each described single channel isolated form MOSFET drive circuit of claim 1-4, it is characterized in that the pulse signal of described input comprises pwm signal and PFM signal.
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