CN110531241A - MOSFET test device - Google Patents
MOSFET test device Download PDFInfo
- Publication number
- CN110531241A CN110531241A CN201910765154.2A CN201910765154A CN110531241A CN 110531241 A CN110531241 A CN 110531241A CN 201910765154 A CN201910765154 A CN 201910765154A CN 110531241 A CN110531241 A CN 110531241A
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- voltage
- mosfet
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- switch
- test
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention provides a kind of MOSFET test devices, comprising: control panel, for controlling relay output control signal；Voltage device, for generating the small signal of voltage；Arteries and veins becomes transformer, is electrically connected with the emitter and collector of detected element, the small signal of voltage for generating to the voltage device is amplified layer by layer, makes voltage low level signal amplification at great number voltage signal；Monitoring unit, by the parameter information for testing circuit monitoring detected element.The present invention motivates internal power source by control panel and generates pulse signal, and voltage device generates the small signal of voltage, passes through arteries and veins power transformation road, amplify layer by layer, the great number voltage signal of 2000V is reached, test circuit device under test is tested, and has the advantages that precision is high, test speed is fast.
Description
Technical field
The present invention relates to metal-oxide-semiconductor detection field more particularly to a kind of MOSFET test devices.
Background technique
Metal-oxide-semiconductor tester is called power device graphic instrument, be semiconductor devices production firm, electronic product complete-system vendor,
A kind of one of most common instrument of the mechanisms such as Electronics laboratory.
Traditional power device characteristic demonstrator is similar to a kind of oscillograph especial, it can directly observe various power devices
Characteristic curve and song cluster.Such as: it can directly observe the common collector of transistor, the input of cobasis plate and common emitter
Characteristic, output feature, converting characteristic, β parameter and alpha parameter etc., and can be as needed, measure other every poles of transistor
Limit characteristic and breakdown characteristics parameter.
At present the high-end graphic instrument of some external imports is even more with two kinds of high-power, digital display and curve data results
Preservation, the resolution ratio of millivolt na level and external connection interface abundant (manipulator, probe station, sorting machine ...) etc. are many advanced
Characteristic, leading and almost whole in occupation of Chinese " high-end graphic instrument " market.
Power device graphic instrument generally used now is substantially the world of domestic graphic instrument, and price is all hovered thousands of mostly
Rank as member, external instrument producer are substantially all the market for having exited general graphic instrument.But the performance of domestic graphic instrument
It is poor, design comparison " soil ".
The test circuit of domestic graphic instrument is as shown in Figure 1, the test circuit can regard a high-voltage constant current source as to test tube
Feed, the breakdown reverse voltage of pipe can be directly read with multimeter.Circuit is substantially a reaction type DC converter,
3V DC voltage is converted to the main high voltage direct current of 1200V or so by it.After power on circuitry, due to transformer T winding N1 with
Coupled Feedback effect between N2, makes circuit form intense oscillations, oscillating voltage boosts through winding N3, to electricity after being rectified from VD2
Hold c2 charging, the both ends C2 is made to can get about 1200v high direct voltage.This high pressure is applied to through high resistance resistor R2 current limliting to test tube,
Puncture pipe, is attempted by the breakdown reverse voltage that can directly read pipe to the multimeter at test tube both ends.Due to R2 resistance
Value is very big, plays the role of a constant-current source.
Traditional metal-oxide-semiconductor tester test current resolution suppresses resolution ratio within 100mV within 1uA, and tests
One parameter probably needs 30 seconds, and testing efficiency is extremely low, operates very cumbersome.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of MOSFET test devices.This hair
Bright technical problems to be solved are achieved through the following technical solutions:
MOSFET test device, comprising:
Control panel gives each power source output control signal for controlling relay；
Voltage device, for generating ± 35V or ± 65V voltage signal；
Pulse transformer is electrically connected with the emitter and collector of MOSFET, the voltage signal for generating to the voltage device
Amplify layer by layer, it is made to zoom into two-way great number voltage signal；
Monitoring unit, by the parameter information for testing circuit monitoring MOSFET.
As a further improvement of the present invention, the test circuit include: switch S1- switch S4, resistance R1- resistance R3,
Voltmeter is connected between the collector of MOSFET and emitter after switch S1 series resistor R1, the collector of MOSFET and transmitting
It is connected between pole between the collector and emitter of the resistance R3 sequentially concatenated, switch S4, resistance R2, switch S2, MOSFET also
The switch S3 and regulated power supply of one concatenation of connection.
As a further improvement of the present invention, the collector of one end of the pulse transformer and measured device connects, institute
The emitter for stating the other end and measured device that arteries and veins becomes transformer connects.
As a further improvement of the present invention, the process of the pulse transformer amplified signal is: being read by ammeter
Ib and IC, calculates amplification factor, and voltage signal is made to zoom into the great number voltage signal no more than 2000V.
As a further improvement of the present invention, the relay is mercury relay.
Compared with prior art, the beneficial effects of the present invention are:
The present invention motivates internal power source by control panel and generates pulse signal, and voltage device generates the small signal of voltage, passes through arteries and veins
Power transformation road, amplifies layer by layer, reaches the great number voltage signal of 2000V, and test circuit device under test is tested, and has essence
The advantage that degree is high, test speed is fast.
Detailed description of the invention
Fig. 1 is the test circuit diagram of domestic graphic instrument.
Fig. 2 is the schematic diagram for testing circuit.
Fig. 3 is the schematic diagram of breakdown voltage between drain D-source S.
Fig. 4 is the schematic diagram of on-state drain current.
Fig. 5 is the schematic diagram of forward voltage drop.
Fig. 6 is reverse grid-source voltage schematic diagram.
Fig. 7 is the schematic diagram of positive grid-source voltage.
Fig. 8 is the schematic diagram of on-state grid-source voltage.
Fig. 9 is the schematic diagram of gate-to-source threshold voltage.
Specific embodiment
The present invention is described in detail for each embodiment shown in reference to the accompanying drawing, but it should be stated that, these
Embodiment is not limitation of the present invention, those of ordinary skill in the art according to these embodiments made by function, method,
Or equivalent transformation or substitution in structure, all belong to the scope of protection of the present invention within.
The MOSFET test device of the present embodiment is to write test condition by host computer to produce by motivating internal power source
Raw pulse signal, specific route carry out control and achieve the purpose that test device.Under certain test condition, these sources
It loads with condition and is accurately connect according to condition, surveyed wherein containing a large amount of load, conversion power source and required outside
Try route.
The MOSFET test device of the present embodiment, comprising: control panel, for controlling relay output control signal；Voltage
Device, for generating the small signal of voltage；Arteries and veins becomes transformer, is electrically connected with the emitter and collector of detected element, for voltage
The small signal of voltage that device generates is amplified layer by layer, makes voltage low level signal amplification at great number voltage signal；Monitoring unit passes through survey
Try the parameter information of circuit monitoring detected element.
Arteries and veins becomes one end of transformer and the collector of measured device connects, and arteries and veins becomes the other end and measured device of transformer
Emitter connection.
The test schematic of the present embodiment is as shown in Fig. 3-Fig. 9, wherein Fig. 3 is BVDSS(in gate-to-source short circuit feelings
Under condition, breakdown voltage between drain D-source S)；Fig. 4 is IDS (ON) (on-state drain current)；Fig. 5 is VF(forward voltage drop)；Fig. 6
For VGSR(reverse grid-source voltage)；Fig. 7 is VGSF(forward direction grid-source voltage)；Fig. 8 is VGSON(on-state grid
Pole-source voltage)；Fig. 9 is VGSTH(gate-to-source threshold voltage).
Fig. 2 is simple test set-up figure, and DUT is tested element.Wherein contain voltage source, current source, test electricity
Press table, various load resistances and specific measurement circuit etc..Specifically, test circuit includes: switch S1- switch S4, resistance R1-
Resistance R3, voltmeter are connected between the collector of detected element and emitter after switch S1 series resistor R1, the collection of detected element
Be connected with the resistance R3 sequentially concatenated, switch S4, resistance R2, switch S2 between electrode and emitter, the collector of detected element and
The switch S3 and regulated power supply of a concatenation are also connected between emitter, the terminals of switch S4 and resistance R2 are additionally coupled to tested device
The collector of part.
The MOSFET test device is made of relay board, height source plate, analog board, normalization plate and control panel, periphery
There are supplied by AC/DC electricity and pulse transformer to provide arteries and veins and gets higher pressure, built-in main board of industrial control computer control.
The intelligence of the present embodiment is mainly reflected in system software and handler interface abundant；Highly integrated main body
Present package size only has 450 × 570 × 280 unit mm, and it is voltage 1mV electric current that high-accuracy high-resolution, which is embodied in resolution ratio,
1nA measuring accuracy is 0.2%+2LSB；The present embodiment becomes technology using voltage signal arteries and veins, and it is small that device builtin voltage device generates voltage
Signal is amplified layer by layer by arteries and veins power transformation road, reaches the great number voltage signal of 2000V.
Novel MOS tube tester changes the test of previous traditional mechanical knob plus signal class oscillograph sampling, using new
The pulse test method of type, host computer write test condition, and mercury relay switching, so that test operation is simple, (program is primary
Write, permanent to call, need to only send can once test), precision height (current resolution 1nA, voltage resolution 1mV), speed
(test speed is fast, and a parameter testing only needs 0.5ms) fastly, greatly improves testing efficiency, carrys out subversiveness to metal-oxide-semiconductor calibration tape
Experience.
The series of detailed descriptions listed above only for feasible embodiment of the invention specifically
Protection scope bright, that they are not intended to limit the invention, it is all without departing from equivalent implementations made by technical spirit of the present invention
Or change should all be included in the protection scope of the present invention.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (5)
1.MOSFET test device characterized by comprising
Control panel gives each power source output control signal for controlling relay；
Voltage device, for generating ± 35V or ± 65V voltage signal；
Pulse transformer is electrically connected with the emitter and collector of MOSFET, the voltage signal for generating to the voltage device
Amplify layer by layer, it is made to zoom into two-way great number voltage signal；
Monitoring unit, by the parameter information for testing circuit monitoring MOSFET.
2. MOSFET test device as described in claim 1, which is characterized in that the test circuit includes: switch S1- switch
S4, resistance R1- resistance R3, voltmeter are connected between the collector of MOSFET and emitter after switch S1 series resistor R1,
The resistance R3 sequentially concatenated, switch S4, resistance R2, switch S2, MOSFET are connected between the collector and emitter of MOSFET
Collector and emitter between be also connected with the switch S3 and regulated power supply of a concatenation.
3. MOSFET test device as claimed in claim 1 or 2, which is characterized in that one end of the pulse transformer and quilt
The collector connection of device is surveyed, the emitter of the other end and measured device that the arteries and veins becomes transformer connects.
4. MOSFET test device as described in claim 1, which is characterized in that the process of the pulse transformer amplified signal
It is: Ib and IC is read by ammeter, amplification factor is calculated, voltage signal is made to zoom into the great number voltage no more than 2000V
Signal.
5. MOSFET test device according to claim 1, which is characterized in that the relay is mercury relay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910765154.2A CN110531241A (en) | 2019-08-19 | 2019-08-19 | MOSFET test device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910765154.2A CN110531241A (en) | 2019-08-19 | 2019-08-19 | MOSFET test device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110531241A true CN110531241A (en) | 2019-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910765154.2A Pending CN110531241A (en) | 2019-08-19 | 2019-08-19 | MOSFET test device |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201555941U (en) * | 2009-11-03 | 2010-08-18 | 四川电力试验研究院 | 10 to 500kV high-voltage frequency conversion tester |
| CN101893669A (en) * | 2010-06-25 | 2010-11-24 | 珠海和佳医疗设备股份有限公司 | Tool and method for testing oil immersed step-up transformer assembly |
| CN103199677A (en) * | 2013-04-08 | 2013-07-10 | 乐金电子研发中心(上海)有限公司 | One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit |
| CN203084059U (en) * | 2013-01-30 | 2013-07-24 | 北京信诺达泰思特科技股份有限公司 | High-voltage testing apparatus based on semiconductor discrete device testing system |
| CN103412248A (en) * | 2013-08-26 | 2013-11-27 | 黄月华 | High-inverse-voltage silicon transistor reverse breakdown voltage tester |
| CN204330967U (en) * | 2014-12-29 | 2015-05-13 | 山东华泰纸业股份有限公司 | The device of quick detection IGBT |
| CN106896258A (en) * | 2017-03-30 | 2017-06-27 | 西北核技术研究所 | A kind of IGCT transient state conduction voltage drop measuring circuit |
| CN208172145U (en) * | 2018-06-12 | 2018-11-30 | 广西电网有限责任公司桂林供电局 | A kind of DC inversion type coil turn-to-turn nonmetal character fault detection means |
| CN109254182A (en) * | 2018-10-12 | 2019-01-22 | 山东阅芯电子科技有限公司 | The current limiting protecting method of power device dynamic test |
| CN109884494A (en) * | 2019-04-08 | 2019-06-14 | 西安交通大学 | A kind of high-pressure high-power thyristor leakage current test macro and its method |
-
2019
- 2019-08-19 CN CN201910765154.2A patent/CN110531241A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201555941U (en) * | 2009-11-03 | 2010-08-18 | 四川电力试验研究院 | 10 to 500kV high-voltage frequency conversion tester |
| CN101893669A (en) * | 2010-06-25 | 2010-11-24 | 珠海和佳医疗设备股份有限公司 | Tool and method for testing oil immersed step-up transformer assembly |
| CN203084059U (en) * | 2013-01-30 | 2013-07-24 | 北京信诺达泰思特科技股份有限公司 | High-voltage testing apparatus based on semiconductor discrete device testing system |
| CN103199677A (en) * | 2013-04-08 | 2013-07-10 | 乐金电子研发中心(上海)有限公司 | One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit |
| CN103412248A (en) * | 2013-08-26 | 2013-11-27 | 黄月华 | High-inverse-voltage silicon transistor reverse breakdown voltage tester |
| CN204330967U (en) * | 2014-12-29 | 2015-05-13 | 山东华泰纸业股份有限公司 | The device of quick detection IGBT |
| CN106896258A (en) * | 2017-03-30 | 2017-06-27 | 西北核技术研究所 | A kind of IGCT transient state conduction voltage drop measuring circuit |
| CN208172145U (en) * | 2018-06-12 | 2018-11-30 | 广西电网有限责任公司桂林供电局 | A kind of DC inversion type coil turn-to-turn nonmetal character fault detection means |
| CN109254182A (en) * | 2018-10-12 | 2019-01-22 | 山东阅芯电子科技有限公司 | The current limiting protecting method of power device dynamic test |
| CN109884494A (en) * | 2019-04-08 | 2019-06-14 | 西安交通大学 | A kind of high-pressure high-power thyristor leakage current test macro and its method |
Non-Patent Citations (1)
| Title |
|---|
| S.S.巴塞: "《半导体脉冲与开关电路》", 30 June 1985 * |
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Application publication date: 20191203 |