CN103412248A

CN103412248A - High-inverse-voltage silicon transistor reverse breakdown voltage tester

Info

Publication number: CN103412248A
Application number: CN2013103742865A
Authority: CN
Inventors: 黄月华
Original assignee: Individual
Current assignee: Individual
Priority date: 2013-08-26
Filing date: 2013-08-26
Publication date: 2013-11-27

Abstract

The invention provides a high-inverse-voltage silicon transistor reverse breakdown voltage tester. The tester is characterized by comprising a 3V direct-current power supply, a feedback type direct-current inverter circuit, a boost rectifier filter circuit, a test port and a universal meter port circuit. The feedback type direct-current inverter circuit comprises an NPN-type transistor VT1, a primary coil L1 and a primary coil L2 of a high-frequency transformer T, a resistor R1 and a potentiometer RP. The boost rectifier filter circuit comprises a boost coil L3 of the high-frequency transformer T, a fast recovery light emitting diode D1, a high-voltage ceramic capacitor C2 and a current-limiting resistor R2. The transistor test port and the universal meter port circuit are composed of four binding posts TX1-TX4 and a 500-type universal meter. The high-inverse-voltage silicon transistor reverse breakdown voltage tester is matched with the 500-type universal meter to measure voltage as high as 1200V, and can meet technical requirements of measurement of high-inverse-voltage silicon transistor reverse breakdown voltage.

Description

High back-pressure silicon transistor breakdown reverse voltage tester

Technical field

The invention belongs to the electronic component field of measuring technique, is about a kind of high back-pressure silicon transistor breakdown reverse voltage tester.

Background technology

Measuring high back-pressure silicon transistor breakdown reverse voltage is that the electronician feels more difficult thing, and JT-1 transistor npn npn characteristic demonstrator ceiling voltage commonly used also can only measure 200V, obviously can not measure the voltage endurance of high back-pressure silicon transistor.A kind of high back-pressure silicon transistor breakdown reverse voltage tester of the present invention is to coordinate attachment device of 500 type multimeter.Its measuring voltage scope is 0～1200V, can meet the technical requirement of measuring high back-pressure silicon transistor breakdown reverse voltage.

Below describe high back-pressure silicon transistor breakdown reverse voltage tester of the present invention related relevant technologies content in implementation process in detail.

Summary of the invention

Goal of the invention and beneficial effect: measuring high back-pressure silicon transistor breakdown reverse voltage is that the electronician feels more difficult thing, JT-1 transistor npn npn characteristic demonstrator ceiling voltage commonly used also can only measure 200V, obviously can not measure the voltage endurance of high back-pressure silicon transistor.A kind of high back-pressure silicon transistor breakdown reverse voltage tester of the present invention is to coordinate attachment device of 500 type multimeter.Its measuring voltage scope is 0～1200V, can meet the technical requirement of measuring high back-pressure silicon transistor breakdown reverse voltage.

The circuit working principle: circuit can regard that a high-voltage constant current source, to tested high back-pressure silicon transistor power supply, can directly read the breakdown reverse voltage of high back-pressure silicon transistor with 500 type multimeters as.Circuit is in fact a reaction type direct-flow inverter, and it is the high pressure of 1200V by the inversion of 3V DC voltage.After circuit switches on power, due to the primary coil L1 of high-frequency transformer T and the Coupled Feedback effect between primary coil L2, make circuit form strong vibration, oscillating voltage is through step-up coil L3, by the backward high-voltage capacitance C2 charging of fast recovery diode D1 rectification, make high-voltage capacitance C2 two ends obtain about 1200V direct current.This high pressure is applied on tested transistor through high value current-limiting resistance R2, makes high back-pressure silicon transistor puncture, and the 500 type multimeters that are connected on tested transistor two ends just can directly be read the breakdown reverse voltage of high back-pressure silicon transistor.Because the resistance of current-limiting resistance R2 is very large, can play the constant current source effect, and the electric current of tested high back-pressure silicon transistor while puncturing is very little, tested high back-pressure silicon transistor is damaged.

Technical scheme: high back-pressure silicon transistor breakdown reverse voltage tester, it comprises 3V direct supply, reaction type DC inversion circuit, the current rectifying and wave filtering circuit that boosts, transistor testing interface and multimeter interface circuit, it is characterized in that:

Reaction type DC inversion circuit: it is comprised of primary coil L1 and primary coil L2, resistance R 1 and the potentiometer RP of NPN transistor VT1, high-frequency transformer T, the base stage of NPN transistor VT1 connects the end of potentiometer RP by resistance R 1, the different name end of the other end of potentiometer RP and activity termination high-frequency transformer T primary coil L1 thereof, the collector of NPN transistor VT1 connects the Same Name of Ends of primary coil L2, the anodal VCC of the different name end of high-frequency transformer T primary coil L2 and the Same Name of Ends connection circuit of primary coil L1, the emitter connection circuit ground GND of NPN transistor VT1;

Rectification and filtering circuit boost: it is comprised of step-up coil L3, fast recovery diode Dl, high pressure ceramic disc capacitor C2 and the current-limiting resistance R2 of high-frequency transformer T, the positive pole of the termination fast recovery diode Dl of the same name of the step-up coil L3 of high-frequency transformer T, the negative pole of fast recovery diode Dl connects the end of high pressure ceramic disc capacitor C2 and the end of current-limiting resistance R2, the other end of the different name termination high pressure ceramic disc capacitor C2 of the step-up coil L3 of high-frequency transformer T;

Transistor testing interface and multimeter interface circuit: it is comprised of 4 binding post TX1～TX4,500 type multimeters, binding post TX1 and binding post TX3 connect the other end of current-limiting resistance R2 and the positive test pencil of 500 type multimeters, and binding post TX2 and binding post TX4 connect the different name end of step-up coil L3 of high-frequency transformer T and the negative test pencil of 500 type multimeters;

The 3V DC power anode is by the positive pole of the anodal VCC of power switch SW connection circuit and electrochemical capacitor C1, the negative pole of 3V DC power cathode connection circuit ground GND and electrochemical capacitor C1.

The accompanying drawing explanation

Accompanying drawing is the embodiment circuit working schematic diagram that the invention provides a high back-pressure silicon transistor breakdown reverse voltage tester; TX1～TX4 is 4 binding posts, and binding post TXl and binding post TX2 are used for receiving and survey high back-pressure silicon transistor, and binding post TX3 and binding post TX4 are used for connecing 500 type multimeters.

Embodiment

According to high back-pressure silicon transistor breakdown reverse voltage tester circuit fundamental diagram shown in the drawings and accompanying drawing explanation, and according to annexation between components and parts in the described each several part circuit of summary of the invention, and the components and parts technical parameter described in embodiment requires and the circuit production main points are implemented to realize the present invention, below in conjunction with embodiment, correlation technique of the present invention is further described.

The selection of components and parts and technical parameter

VT1 is NPN transistor, can adopt the models such as 2SCl008, requires BVceo >=60V, Icm >=0.8A, β >=50;

Dl is fast recovery diode, and the model of selecting is FRl08, requires working inverse voltage >=1500V;

Resistance is all used metalfilmresistor, power to be 1/4W, and the resistance of resistance R 1 is 240 Ω, and the resistance of current-limiting resistance R2 is 1M Ω;

RP is potentiometer, and its resistance is that 1.2K Ω, power are 1W;

C1 is electrochemical capacitor, and the model of selecting is CDll, and its capacity is 470 μ F/10V;

C2 is the high pressure ceramic disc capacitor, and its capacity is 1000PF/2KV;

The 3V direct supply can save No. 2 manganese-zinc batteries with two.

Circuit production main points, circuit debugging and using method

The making of high-frequency transformer T: be 1500 or 2000 EE20 type magnetic core by magnetoconductivity, with supporting skeleton coiling, first around primary coil L1, L2, primary coil L1, L2 are bifilar and around 10 circles with ￠ 0.35mm enameled wire, tap centered by the different name end of the Same Name of Ends of primary coil L1 and primary coil L2 joins; Step-up coil L3 is with ￠ 0.17mm high strength enamelled wire around 260 circles, and interlayer must add insulating tape, to prevent high voltage arc between primary coil and step-up coil.Because the circuit working electric current is less, and number of primary turns is few again, does not have the magnetic saturation problem, so when magnetic core assembles, do not need to add air gap.When high-frequency transformer T makes with wiring, should note distinguishing the Same Name of Ends of coil, Same Name of Ends indicates " " on accompanying drawing;

TX1～TX4 is 4 binding posts, and binding post TXl, binding post TX2 are used for receiving and survey high back-pressure silicon transistor, and binding post TX3, binding post TX4 are used for connecing 500 type multimeters;

Because of the circuit structure of high back-pressure silicon transistor breakdown reverse voltage tester fairly simple, as long as the electronic devices and components performance of generally selecting is intact, and the components and parts annexation in accompanying drawing is welded to specifications, physical connection line and welding quality are after careful inspection is correct, circuit of the present invention does not need to carry out any debugging substantially, and connecting the 3V direct supply can work;

When circuit debugging, binding post TX3, TX4 are connect to the DC voltage 2500V shelves of 500 type multimeters, connect circuit power switch SW, with screwdriver trimmer potentiometer RP, make the reading of 500 type multimeters in the 1200V left and right, now the collector current of NPN transistor VT1 is about 180mA;

If output dc voltage only has the 200V left and right, the termination of the same name that high-frequency transformer T coil is described is anti-, can first the two ends of step-up coil L3 be exchanged and try it, if output dc voltage is still not right, can again the Same Name of Ends of primary coil L1 or primary coil L2 and different name end be exchanged to an examination;

When the high back-pressure silicon transistor of test, as long as tested high back-pressure silicon transistor is connected with binding post TXl, binding post TX2, on binding post TX3, TX4, connect 500 type multimeters, the reading on multimeter is the breakdown reverse voltage value of high back-pressure silicon transistor;

High back-pressure silicon transistor breakdown reverse voltage tester also can be used for measuring the breakdown reverse voltage of crystal diode.

Claims

1. one kind high back-pressure silicon transistor breakdown reverse voltage tester, it comprises 3V direct supply, reaction type DC inversion circuit, the current rectifying and wave filtering circuit that boosts, transistor testing interface and multimeter interface circuit, it is characterized in that:

Described reaction type DC inversion circuit is by NPN transistor VT1, the primary coil L1 of high-frequency transformer T and primary coil L2, resistance R 1 and potentiometer RP form, the base stage of NPN transistor VT1 connects the end of potentiometer RP by resistance R 1, the different name end of the other end of potentiometer RP and activity termination high-frequency transformer T primary coil L1 thereof, the collector of NPN transistor VT1 connects the Same Name of Ends of primary coil L2, the anodal VCC of the different name end of high-frequency transformer T primary coil L2 and the Same Name of Ends connection circuit of primary coil L1, the emitter connection circuit ground GND of NPN transistor VT1,

Described rectification and the filtering circuit of boosting is comprised of step-up coil L3, fast recovery diode Dl, high pressure ceramic disc capacitor C2 and the current-limiting resistance R2 of high-frequency transformer T, the positive pole of the termination fast recovery diode Dl of the same name of the step-up coil L3 of high-frequency transformer T, the negative pole of fast recovery diode Dl connects the end of high pressure ceramic disc capacitor C2 and the end of current-limiting resistance R2, the other end of the different name termination high pressure ceramic disc capacitor C2 of the step-up coil L3 of high-frequency transformer T;

Described transistor testing interface and multimeter interface circuit are comprised of 4 binding post TX1～TX4,500 type multimeters, binding post TX1 and binding post TX3 connect the other end of current-limiting resistance R2 and the positive test pencil of 500 type multimeters, and binding post TX2 and binding post TX4 connect the different name end of step-up coil L3 of high-frequency transformer T and the negative test pencil of 500 type multimeters;

Described 3V DC power anode is by the positive pole of the anodal VCC of power switch SW connection circuit and electrochemical capacitor C1, the negative pole of 3V DC power cathode connection circuit ground GND and electrochemical capacitor C1.