CN202524281U - Isolated rapid turn-off oxide field effect transistor (MOFET) driving circuit - Google Patents
Isolated rapid turn-off oxide field effect transistor (MOFET) driving circuit Download PDFInfo
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- CN202524281U CN202524281U CN2012200494262U CN201220049426U CN202524281U CN 202524281 U CN202524281 U CN 202524281U CN 2012200494262 U CN2012200494262 U CN 2012200494262U CN 201220049426 U CN201220049426 U CN 201220049426U CN 202524281 U CN202524281 U CN 202524281U
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Abstract
The utility model discloses an isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit, which comprises a totem-pole output circuit, a transformer T, a negative voltage generation circuit and an MOSFET, wherein an output point of the totem-pole output circuit is connected with the primary dotted terminal of the transformer T through the anode of a blocking capacitor C1; the secondary dotted terminal of the transformer T is sequentially connected in series with a secondary capacitor C2, a diode D4, an electrolytic capacitor C3, a resistor R1 and the MOSFET, and then is connected to the secondary unlike terminal of the transformer T; a voltage stabilizing diode D3 is connected to the two ends of the secondary side of the transformer T; the base of a triode Tr3 is connected with the anode of the secondary capacitor C2, the collector of the triode Tr3 is connected with the cathode of the diode D4, and the emitter of the triode Tr3 is connected with the secondary unlike terminal of the transformer T; a diode D6 is reversely connected in parallel with the two ends of the gate input resistor R1; a voltage stabilizing diode D5 is connected in parallel with the two ends of the electrolytic capacitor C3; and a resistor R2 is connected between the gate and source of the MOSFET. The circuit is applied to places with high requirements on the anti-interference capability of the driving circuit and on rapid turn-off and with large duty ratio variation ranges.
Description
Technical field
The utility model belongs to power electronics driven application technical field, relates in particular to the MOSFET drive circuit that a kind of isolated form can turn-off fast, and this circuit is applicable to the drive circuit strong interference immunity, needs to turn-off fast and the bigger occasion of change in duty cycle scope.
Background technology
At present, power converter circuit chip for driving price commonly used is higher, has certain limitation in different particular application.Power MOSFET (metal oxide semiconductor field effect tube) belongs to the voltage-type control device; Will conducting as long as the voltage that applies between grid and the source electrode surpasses its threshold voltage; Because there is junction capacitance in MOSFET, the unexpected rising of its leakage, source electrode voltage will produce interference voltage at grid, two ends, source through junction capacitance during shutoff.Traditional magnetic coupling MOSFET drive circuit comprises two triodes, a capacitance, a transformer, a grid input resistance and a voltage-stabiliser tube; Two triodes are formed totem output; Be connected to the former limit of transformer through capacitance; The transformer secondary is connected to the grid that MOSFET manages through a grid input resistance, connects a voltage stabilizing didoe between the grid of MOSFET pipe and the source electrode.Traditional magnetic coupling drive circuit also plays the effect of boosting in some cases; And during change in duty cycle; The turn-off capacity that drives is unaffected; But the voltage pulse output amplitude can change along with the variation of duty ratio, during owing to shutoff negative voltage can not be provided, so the circuit anti-interference is also relatively poor.And its voltage pulse output amplitude can change along with the variation of duty ratio, when duty ratio hour; Negative voltage is little; Forward voltage is higher, should make this moment its amplitude be no more than the permission voltage of MOSFET grid, when duty ratio greater than 0.5 the time; The driving voltage forward voltage is less than its negative voltage, and should make its negative value be no more than the permission voltage of MOSFET grid this moment.So it is less demanding that traditional magnetic coupling drive circuit only is applicable to anti-interference, the slow and duty ratio of turn-off speed is fixed or is changed little occasion.
Summary of the invention
The utility model provide a kind of be applicable to the drive circuit anti-interference have relatively high expectations, turn-off speed is fast and the bigger occasion of change in duty cycle scope, the band high frequency transformer is isolated can turn-off and the magnetic coupling drive circuit of strong interference immunity fast.
The technical scheme that the utility model is separated is: the MOSFET drive circuit that a kind of isolated form can turn-off fast; Comprise totem output circuit, high-frequency isolation transformer T, circuit for generating negative voltage and MOSFET pipe; Said totem output circuit is made up of NPN type triode Tr1 and positive-negative-positive triode Tr2; Said triode Tr1 reverse parallel connection diode D1, said triode Tr2 reverse parallel connection diode D2; The output point of said totem output circuit links to each other with capacitance C1 is anodal, the anodal former limit of the said high-frequency isolation transformer T end of the same name that connects of said capacitance C1; Said high-frequency isolation transformer T secondary end of the same name links to each other with secondary capacitor C 2 negative poles; Insert the grid of said MOSFET pipe behind the said secondary capacitor C 2 cathode series resistance R1, the source electrode of said MOSFET pipe links to each other with said high-frequency isolation transformer T secondary non-same polarity; Voltage stabilizing didoe D3 negative electrode links to each other with the positive pole of secondary capacitor C 2, and anode tap links to each other with high-frequency isolation transformer T secondary non-same polarity; Diode D6 is connected in reverse parallel in the two ends of grid input resistance R1; Resistance R 2 is connected between the grid and source electrode of power MOSFET tube.
Further, this drive circuit also comprises a circuit for generating negative voltage that is connected between secondary capacitor C 2 positive poles and the resistance R 1, and said circuit for generating negative voltage comprises diode D4, triode Tr3, voltage-stabiliser tube D5 and electrochemical capacitor C3; The anode of said diode D4 and said 2 anodal linking to each other of secondary capacitor C, the negative electrode of said diode D4 links to each other with the end of said electrochemical capacitor C3, and the other end of said electrochemical capacitor C3 is connected with resistance R 1; The base stage of said triode Tr3 links to each other with the positive pole of said secondary capacitor C 2, and collector electrode links to each other with said diode D4 negative electrode, and emitter links to each other with said high-frequency isolation transformer T secondary non-same polarity; Said voltage-stabiliser tube D5 is connected in parallel on the two ends of said electrochemical capacitor C3.
Further, the turn ratio of said high-frequency isolation transformer T is 1:1.
The beneficial effect of the utility model is: in circuit, add isolating transformer, control circuit and main circuit are isolated, transformer is generally the magnet ring or the magnetic jar of high frequency, high magnetic rate.Two triodes are formed totem output, and input current is played amplification.Two diodes of two triode two ends inverse parallels forming the totem output circuit play the effect of afterflow during inductive load.Capacitance of the former edge joint of high-frequency isolation transformer stops DC component to be passed through, and avoids the transformer dc magnetization and saturated.Secondary in high-frequency isolation transformer inserts a secondary electric capacity, is used for reappearing the voltage (when the turn ratio of transformer is 1:1) of former limit capacitance.Connect a voltage-stabiliser tube between secondary electric capacity and the transformer secondary non-same polarity, make interior output of forward conduction time positive voltage vibration spike be limited in the magnitude of voltage at voltage stabilizing didoe two ends, pass through voltage-stabiliser tube in the reverse-conducting time to the charging of secondary electric capacity.In the anode of secondary capacitance cathode termination counnter attack diode and the base stage of positive-negative-positive triode; Triode is used for for producing negative voltage passage being provided, and series connection one electrochemical capacitor provides negative voltage between counnter attack diode and the grid input resistance when being used for turn-offing; Voltage stabilizing didoe of electrochemical capacitor two ends parallel connection; Make the electrochemical capacitor voltage stable, connect a resistance between the grid of MOSFET pipe and the source electrode and prevent electrostatic breakdown, play a protective role.Parallel connection backward diode in resistance two ends provides the Low ESR discharge channel to the parasitic input capacitance of MOSFET pipe grid source electrode, quickens the input capacitance discharge, thereby quickens the shutoff of MOSFET pipe.
This circuit structure is simple, with low cost, only needs one road driving power, has relatively high expectations, needs shutoff fast and the bigger occasion of change in duty cycle scope to have good effect to the drive circuit anti-interference.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified:
Fig. 1 is circuit theory diagrams;
Fig. 2 is a groundwork waveform in the circuit;
Fig. 3 is the operation mode of opening of circuit;
Fig. 4 is the shutoff operation mode of circuit.
Among Fig. 1, Fig. 3, Fig. 4, T
R1Be NPN type triode, T
R2And T
R3Be positive-negative-positive triode, D
1And D
2Be fly-wheel diode, C
1Be former limit capacitance, T is a high-frequency isolation transformer, C
2Be secondary electric capacity, D
3And D
5Be voltage stabilizing didoe, D
4Be counnter attack diode, R
1Be resistance, D
6Be diode, R
2Be protective resistance, Q is a power MOSFET tube.
Among Fig. 2, D is a duty ratio, and T is a switch periods, and DT is an ON time, and ((1-D) T is the turn-off time, V
gBe input pwm pulse waveform, V
D2Be diode D
2Voltage, i.e. input pulse driving voltage, V
D3Be voltage-stabiliser tube D
3The voltage at two ends, V
GSBe the grid of power MOSFET and the voltage between the source electrode.
Embodiment
Among Fig. 1, NPN type triode T
R1Collector electrode connect positive supply, emitter and positive-negative-positive triode T
R2Emitter link to each other, form totem output, be used for power amplification, improve the drives ability, diode D
1With diode D
2Respectively with triode T
R1With triode T
R2The afterflow effect is played in parallel connection when inductive load.Capacitance C
1Positive ends links to each other with the totem output point, and the negative polarity end links to each other with the former limit of high-frequency isolation transformer T end of the same name, stops DC component to be passed through, and avoids the transformer dc magnetization and saturated.The secondary capacitor C
2The negative polarity end links to each other with high-frequency isolation transformer T secondary end of the same name, positive ends and counnter attack diode D
4Anode link to each other, be used for reappearing the voltage of former limit capacitance.Voltage stabilizing didoe D
3Cathode terminal links to each other with the positive terminal of secondary electric capacity, and anode tap links to each other with transformer secondary non-same polarity, makes output positive voltage vibration spike be limited in voltage stabilizing didoe D in the forward conduction time
3The magnitude of voltage at two ends passes through voltage stabilizing didoe D in the reverse-conducting time
3Give the secondary capacitor C
2Charging.The anode of diode D4 and triode T
R3Base stage connect the secondary capacitor C together
2Positive pole, electrochemical capacitor C
3Be connected on counnter attack diode D
4With grid input resistance R
1Between, counnter attack diode D
4Negative electrode meets electrochemical capacitor C
3Positive pole, voltage-stabiliser tube D
5Be connected in parallel on electrochemical capacitor C
3Two ends, triode T
R3Collector electrode be attempted by diode D
4Negative electrode and electrochemical capacitor C
3Between the anode, collector electrode links to each other triode T with secondary common ground end
R3, diode D
4, electrochemical capacitor C
3With voltage-stabiliser tube D
5, circuit, improves the shutoff of interference free performance and acceleration switch pipe, protective resistance R when turn-offing between the MOSFET pipe grid source electrode negative voltage being provided
2Be connected between the grid and source electrode of power MOSFET tube Q, because good insulation preformance between the grid of power MOSFET tube Q and the source electrode, capacitance is very little again, and very little some charge inducings just can cause very high voltage, through protective resistance R
2Can discharge, play a protective role.Diode D
6Be connected in reverse parallel in grid input resistance R
1Two ends, the Low ESR discharge channel is provided for the parasitic input capacitance of power MOSFET tube Q, quicken parasitic input capacitance discharge, thereby further quicken the shutoff of MOSFET pipe Q.
Fig. 2 is several main waveforms in the drive circuit, and the duty ratio of establishing pwm signal is D, and switch periods is T; Ignore the Dead Time in the switch transition process; When the duty ratio of a switch is D, ON time is DT, and then another one switching tube duty ratio is (1-D); ON time is (1-D) T, because by triode T
R3, diode D
4, capacitor C
3With voltage-stabiliser tube D
5The existence of the circuit for generating negative voltage of forming makes that power MOSFET voltage between its grid and the source electrode when turn-offing is negative voltage, like V among Fig. 2
GSShown in.
For more intuitive explanation, in the ideal case it to be made a concrete analysis of below, said drive circuit mainly contains two kinds of operation modes:
1. open operation mode:
As shown in Figure 3, V
gFor input pwm pulse waveform, work as V
gDuring for high level, triode T
R1Conducting, triode T
R2Turn-off, by triode T
R1With triode T
R2The totem mid-point voltage of forming is driving voltage V
Cc, i.e. V among Fig. 2
D2, this moment triode T
R3Base stage be high level, so triode T
R3Not conducting is to electrochemical capacitor C
3Charge, this moment, the grid and the driving voltage between the source electrode of power MOSFET were voltage-stabiliser tube D
3Voltage deduct voltage-stabiliser tube D
5The voltage at two ends.
2. shutoff operation mode:
As shown in Figure 4, work as V
gDuring for low level, triode T
R1Shutoff, triode T
R2Conducting, triode T at this moment
R3Base stage be low level, so triode T
R3Conducting is because D
4Existence, make capacitor C
3Positive pole through triode T
R3Emitter and the collector electrode source electrode that is connected to power MOSFET, form turn-off circuit, this moment power MOSFET grid and the voltage V between the source electrode
GSBe negative value, its size approaches voltage stabilizing didoe D
5The voltage at two ends so quickened the shutoff of power MOSFET, has improved interference free performance simultaneously, in addition, and diode D
6For the parasitic input capacitance of power MOSFET tube provides the Low ESR discharge channel, quicken parasitic input capacitance discharge, thereby further quickened the shutoff of power MOSFET tube.
Claims (3)
1. the MOSFET drive circuit that isolated form can turn-off fast comprises totem output circuit, high-frequency isolation transformer T, circuit for generating negative voltage and MOSFET pipe, and it is characterized in that: said totem output circuit is by NPN type triode T
R1With positive-negative-positive triode T
R2Form said triode T
R1Reverse parallel connection diode D
1, said triode T
R2Reverse parallel connection diode D
2The output point of said totem output circuit and capacitance C
1Anodal continuous, said capacitance C
1The anodal former limit of the said high-frequency isolation transformer T end of the same name that connects; Said high-frequency isolation transformer T secondary end of the same name and secondary capacitor C
2Negative pole links to each other, said secondary capacitor C
2Cathode series resistance R
1The grid of said MOSFET pipe is inserted in the back, and the source electrode of said MOSFET pipe links to each other with said high-frequency isolation transformer T secondary non-same polarity; Voltage stabilizing didoe D
3Negative electrode and secondary capacitor C
2Positive pole link to each other, anode tap links to each other with high-frequency isolation transformer T secondary non-same polarity; Diode D
6Be connected in reverse parallel in grid input resistance R
1Two ends; Resistance R
2Be connected between the grid and source electrode of power MOSFET tube.
2. the MOSFET drive circuit that a kind of isolated form according to claim 1 can turn-off fast is characterized in that, comprises that also is connected on a secondary capacitor C
2Positive pole and resistance R
1Between circuit for generating negative voltage, said circuit for generating negative voltage comprises diode D
4, triode T
R3, voltage-stabiliser tube D
5With electrochemical capacitor C
3Said diode D
4Anode and said secondary capacitor C
2Anodal continuous, said diode D
4Negative electrode and said electrochemical capacitor C
3An end link to each other said electrochemical capacitor C
3The other end and resistance R
1Connect; Said triode T
R3Base stage and said secondary capacitor C
2Positive pole link to each other collector electrode and said diode D
4Negative electrode links to each other, and emitter links to each other with said high-frequency isolation transformer T secondary non-same polarity; Said voltage-stabiliser tube D
5Be connected in parallel on said electrochemical capacitor C
3Two ends.
3. the MOSFET drive circuit that a kind of isolated form according to claim 1 can turn-off fast is characterized in that, the turn ratio of said high-frequency isolation transformer T is 1:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200494262U CN202524281U (en) | 2012-02-16 | 2012-02-16 | Isolated rapid turn-off oxide field effect transistor (MOFET) driving circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200494262U CN202524281U (en) | 2012-02-16 | 2012-02-16 | Isolated rapid turn-off oxide field effect transistor (MOFET) driving circuit |
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|---|---|
| CN202524281U true CN202524281U (en) | 2012-11-07 |
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|---|---|---|---|
| CN2012200494262U Expired - Fee Related CN202524281U (en) | 2012-02-16 | 2012-02-16 | Isolated rapid turn-off oxide field effect transistor (MOFET) driving circuit |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102594101A (en) * | 2012-02-16 | 2012-07-18 | 江苏大学 | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit |
| CN104833817A (en) * | 2015-05-06 | 2015-08-12 | 成都诚邦动力测试仪器有限公司 | Motor speed measuring system based on linear drive |
| CN104897920A (en) * | 2015-05-06 | 2015-09-09 | 成都诚邦动力测试仪器有限公司 | Motor rotating speed testing system based on double field-effect transistor oscillating circuit |
| CN105024678A (en) * | 2015-08-18 | 2015-11-04 | 北京雪迪龙科技股份有限公司 | MOSFET (metal oxide semiconductor field effect transistor) driving circuit and MOSFET driving system |
| CN106452024A (en) * | 2016-11-30 | 2017-02-22 | 深圳市能隙科技有限公司 | Switching power supply and single power supply-powered negative voltage driving circuit |
| JP2020014033A (en) * | 2018-07-13 | 2020-01-23 | 株式会社明電舎 | Gate drive circuit of semiconductor switching element and pulse power supply |
| CN110729894A (en) * | 2018-07-16 | 2020-01-24 | 杭州国彪超声设备有限公司 | Direct current chopping voltage regulating circuit |
| CN111404502A (en) * | 2020-03-24 | 2020-07-10 | 广州中逸光电子科技有限公司 | Totem-pole circuit |
| WO2021175085A1 (en) * | 2020-03-04 | 2021-09-10 | 华为技术有限公司 | Driving circuit of power switching device, and driving system |
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2012
- 2012-02-16 CN CN2012200494262U patent/CN202524281U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102594101A (en) * | 2012-02-16 | 2012-07-18 | 江苏大学 | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit |
| CN104833817A (en) * | 2015-05-06 | 2015-08-12 | 成都诚邦动力测试仪器有限公司 | Motor speed measuring system based on linear drive |
| CN104897920A (en) * | 2015-05-06 | 2015-09-09 | 成都诚邦动力测试仪器有限公司 | Motor rotating speed testing system based on double field-effect transistor oscillating circuit |
| CN105024678A (en) * | 2015-08-18 | 2015-11-04 | 北京雪迪龙科技股份有限公司 | MOSFET (metal oxide semiconductor field effect transistor) driving circuit and MOSFET driving system |
| CN105024678B (en) * | 2015-08-18 | 2018-09-14 | 北京雪迪龙科技股份有限公司 | A kind of MOSFET driving circuits and system |
| CN106452024A (en) * | 2016-11-30 | 2017-02-22 | 深圳市能隙科技有限公司 | Switching power supply and single power supply-powered negative voltage driving circuit |
| JP2020014033A (en) * | 2018-07-13 | 2020-01-23 | 株式会社明電舎 | Gate drive circuit of semiconductor switching element and pulse power supply |
| JP7067328B2 (en) | 2018-07-13 | 2022-05-16 | 株式会社明電舎 | Gate drive circuit and pulse power supply for semiconductor switching elements |
| CN110729894A (en) * | 2018-07-16 | 2020-01-24 | 杭州国彪超声设备有限公司 | Direct current chopping voltage regulating circuit |
| CN110729894B (en) * | 2018-07-16 | 2020-12-18 | 杭州国彪超声设备有限公司 | Direct current chopping voltage regulating circuit |
| WO2021175085A1 (en) * | 2020-03-04 | 2021-09-10 | 华为技术有限公司 | Driving circuit of power switching device, and driving system |
| CN111404502A (en) * | 2020-03-24 | 2020-07-10 | 广州中逸光电子科技有限公司 | Totem-pole circuit |
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Granted publication date: 20121107 Termination date: 20130216 |