CN204696908U - A kind of asymmetrical half-bridge isolated drive circuit - Google Patents
A kind of asymmetrical half-bridge isolated drive circuit Download PDFInfo
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- CN204696908U CN204696908U CN201520337159.2U CN201520337159U CN204696908U CN 204696908 U CN204696908 U CN 204696908U CN 201520337159 U CN201520337159 U CN 201520337159U CN 204696908 U CN204696908 U CN 204696908U
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Abstract
The utility model discloses a kind of asymmetrical half-bridge isolated drive circuit, comprise resistance R1, electric capacity C1, triode VT1, transformer T, diode D1 and metal-oxide-semiconductor VS1, resistance R1 one end is contact resistance R2 and input signal Vi respectively, resistance R1 other end connecting triode VT1 base stage, triode VT1 collector electrode connects power supply VCC, triode VT1 emitter connects electric capacity C1 and triode VT2 emitter respectively, the triode VT2 base stage contact resistance R2 other end, triode VT2 collector electrode contact resistance R8 ground connection.The utility model asymmetrical half-bridge isolated drive circuit, is applicable to the chip that pulse exports, has simple and reliable for structure, and the feature such as take up room little, and achieve electrical isolation, can apply to middle large-power occasions, be applicable to promoting the use of.
Description
Technical field
The utility model relates to a kind of drive circuit, specifically a kind of asymmetrical half-bridge isolated drive circuit.
Background technology
Along with the development of power semiconductor device, there is multiple wholly-controled device, the advantages such as wherein MOSFET, easily parallel connection fast with its switching speed, required driving power are low become one of device for power switching the most frequently used in Switching Power Supply, simultaneously, along with the development of soft switch technique, the application with the asymmetrical half-bridge converter of the advantages such as simple, the used components and parts of structure are few, voltage stress is little is also more and more extensive, but there is following defect in existing half-bridge isolated drive circuit: 1, complex structure, needs dual power supply; 2, components and parts are more, particularly need two isolating transformers, not only take larger space, and increase circuit cost.
Utility model content
The purpose of this utility model is to provide a kind of asymmetrical half-bridge isolated drive circuit, to solve the problem proposed in above-mentioned background technology.
For achieving the above object, the utility model provides following technical scheme:
A kind of asymmetrical half-bridge isolated drive circuit, comprise resistance R1, electric capacity C1, triode VT1, transformer T, diode D1 and metal-oxide-semiconductor VS1, described resistance R1 one end is contact resistance R2 and input signal Vi respectively, resistance R1 other end connecting triode VT1 base stage, triode VT1 collector electrode connects power supply VCC, triode VT1 emitter connects electric capacity C1 and triode VT2 emitter respectively, the triode VT2 base stage contact resistance R2 other end, triode VT2 collector electrode contact resistance R8 ground connection, resistance R8 other end connection transformer T coil L1, the transformer T coil L1 other end connects the electric capacity C1 other end, transformer T coil L2 one end connects electric capacity C2 and resistance R7 respectively, electric capacity C2 other end contact resistance R3, the resistance R3 other end is the contact resistance R7 other end respectively, diode D1 positive pole, resistance R5 and triode VT4 base stage, the resistance R5 other end is the connection transformer T coil L2 other end respectively, triode VT4 collector electrode, diode D3 positive pole, the S pole of metal-oxide-semiconductor VS1 and the D pole of switch VS2, diode D3 negative pole connects diode D1 negative pole respectively, the G pole of triode VT4 emitter and metal-oxide-semiconductor VS1, the D pole of metal-oxide-semiconductor VS1 connects output end vo, the S pole of described metal-oxide-semiconductor VS2 connects diode D4 positive pole respectively, triode VT3 collector electrode, resistance R6, resistance R9 and transformer T coil L3, the G pole of metal-oxide-semiconductor VS2 connects diode D4 negative pole respectively, triode VT3 emitter and diode D2 negative pole, diode D2 positive pole is contact resistance R4 respectively, the resistance R6 other end and triode VT3 base stage, the resistance R4 other end connects electric capacity C3 and the resistance R9 other end respectively, the electric capacity C3 other end connection transformer T coil L3 other end.
As further program of the utility model: described diode D1 is voltage stabilizing didoe.
As the utility model further scheme: described diode D2 is voltage stabilizing didoe.
Compared with prior art, the beneficial effects of the utility model are: the utility model asymmetrical half-bridge isolated drive circuit, use single supply, be applicable to the chip that pulse exports, have simple and reliable for structure, the feature such as take up room little, and achieve electrical isolation, middle large-power occasions can be applied to, be applicable to promoting the use of.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of asymmetrical half-bridge isolated drive circuit.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Refer to Fig. 1, in the utility model embodiment, a kind of asymmetrical half-bridge isolated drive circuit, comprise resistance R1, electric capacity C1, triode VT1, transformer T, diode D1 and metal-oxide-semiconductor VS1, resistance R1 one end is contact resistance R2 and input signal Vi respectively, resistance R1 other end connecting triode VT1 base stage, triode VT1 collector electrode connects power supply VCC, triode VT1 emitter connects electric capacity C1 and triode VT2 emitter respectively, the triode VT2 base stage contact resistance R2 other end, triode VT2 collector electrode contact resistance R8 ground connection, resistance R8 other end connection transformer T coil L1, the transformer T coil L1 other end connects the electric capacity C1 other end, transformer T coil L2 one end connects electric capacity C2 and resistance R7 respectively, electric capacity C2 other end contact resistance R3, the resistance R3 other end is the contact resistance R7 other end respectively, diode D1 positive pole, resistance R5 and triode VT4 base stage, the resistance R5 other end is the connection transformer T coil L2 other end respectively, triode VT4 collector electrode, diode D3 positive pole, the S pole of metal-oxide-semiconductor VS1 and the D pole of switch VS2, diode D3 negative pole connects diode D1 negative pole respectively, the G pole of triode VT4 emitter and metal-oxide-semiconductor VS1, the D pole of metal-oxide-semiconductor VS1 connects output end vo, the S pole of metal-oxide-semiconductor VS2 connects diode D4 positive pole respectively, triode VT3 collector electrode, resistance R6, resistance R9 and transformer T coil L3, the G pole of metal-oxide-semiconductor VS2 connects diode D4 negative pole respectively, triode VT3 emitter and diode D2 negative pole, diode D2 positive pole is contact resistance R4 respectively, the resistance R6 other end and triode VT3 base stage, the resistance R4 other end connects electric capacity C3 and the resistance R9 other end respectively, the electric capacity C3 other end connection transformer T coil L3 other end.
Diode D1 is voltage stabilizing didoe.
Diode D2 is voltage stabilizing didoe.
Operation principle of the present utility model is: refer to Fig. 1, the push-pull type power amplifier that triode VT1, VT2 are formed, and when input chip Vi is high level, triode VT1 conducting, provides metal-oxide-semiconductor VS1 driving power, during low level, triode VT2 conducting, energy storage on electric capacity C1 provides reverse impulse, the two-way waveform that transformer coil L2 and transformer coil L3 exports becomes complementary pulse signal after modulate circuit, thus driven MOS pipe VS1 and metal-oxide-semiconductor VS2, pulse signal is timing, metal-oxide-semiconductor VS1 and VS2 conducting, triode VT3 during this period, VT4 ends, by triode VT3, the leadage circuit that VT4 is formed does not work, when pulse signal is zero, then triode VT3, VT4 conducting, to release fast metal-oxide-semiconductor VS1 and VS2 electric charge, accelerate the cut-off of metal-oxide-semiconductor VS1 and VS2, voltage stabilizing didoe D1, D2 paired pulses waveform forward carries out slicing.
The utility model asymmetrical half-bridge isolated drive circuit not only structure is simple, reasonable in design, and achieves the complementary drive of metal-oxide-semiconductor preferably, and its drive waveforms has good stability, is a high performance isolated drive circuit.
Claims (3)
1. an asymmetrical half-bridge isolated drive circuit, comprise resistance R1, electric capacity C1, triode VT1, transformer T, diode D1 and metal-oxide-semiconductor VS1, it is characterized in that, described resistance R1 one end is contact resistance R2 and input signal Vi respectively, resistance R1 other end connecting triode VT1 base stage, triode VT1 collector electrode connects power supply VCC, triode VT1 emitter connects electric capacity C1 and triode VT2 emitter respectively, the triode VT2 base stage contact resistance R2 other end, triode VT2 collector electrode contact resistance R8 ground connection, resistance R8 other end connection transformer T coil L1, the transformer T coil L1 other end connects the electric capacity C1 other end, transformer T coil L2 one end connects electric capacity C2 and resistance R7 respectively, electric capacity C2 other end contact resistance R3, the resistance R3 other end is the contact resistance R7 other end respectively, diode D1 positive pole, resistance R5 and triode VT4 base stage, the resistance R5 other end is the connection transformer T coil L2 other end respectively, triode VT4 collector electrode, diode D3 positive pole, the S pole of metal-oxide-semiconductor VS1 and the D pole of switch VS2, diode D3 negative pole connects diode D1 negative pole respectively, the G pole of triode VT4 emitter and metal-oxide-semiconductor VS1, the D pole of metal-oxide-semiconductor VS1 connects output end vo, the S pole of described metal-oxide-semiconductor VS2 connects diode D4 positive pole respectively, triode VT3 collector electrode, resistance R6, resistance R9 and transformer T coil L3, the G pole of metal-oxide-semiconductor VS2 connects diode D4 negative pole respectively, triode VT3 emitter and diode D2 negative pole, diode D2 positive pole is contact resistance R4 respectively, the resistance R6 other end and triode VT3 base stage, the resistance R4 other end connects electric capacity C3 and the resistance R9 other end respectively, the electric capacity C3 other end connection transformer T coil L3 other end.
2. asymmetrical half-bridge isolated drive circuit according to claim 1, is characterized in that, described diode D1 is voltage stabilizing didoe.
3. asymmetrical half-bridge isolated drive circuit according to claim 1, is characterized in that, described diode D2 is voltage stabilizing didoe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520337159.2U CN204696908U (en) | 2015-05-23 | 2015-05-23 | A kind of asymmetrical half-bridge isolated drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520337159.2U CN204696908U (en) | 2015-05-23 | 2015-05-23 | A kind of asymmetrical half-bridge isolated drive circuit |
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| CN204696908U true CN204696908U (en) | 2015-10-07 |
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| CN201520337159.2U Expired - Fee Related CN204696908U (en) | 2015-05-23 | 2015-05-23 | A kind of asymmetrical half-bridge isolated drive circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106300933A (en) * | 2016-08-31 | 2017-01-04 | 苏州迈力电器有限公司 | A kind of transformer primary side waveform that is used for improves circuit |
| CN106300934A (en) * | 2016-08-31 | 2017-01-04 | 苏州迈力电器有限公司 | A kind of transformer primary side waveform for inverter voltage improves circuit |
| CN108667281A (en) * | 2018-07-09 | 2018-10-16 | 珠海格力电器股份有限公司 | Half-bridge drive circuit, chip and air-conditioning |
| CN110299826A (en) * | 2019-07-01 | 2019-10-01 | 上海空间电源研究所 | A kind of spacecraft highly reliable isolated drive circuit of suitable wide duty ratio |
| CN114070021A (en) * | 2020-08-10 | 2022-02-18 | 深圳市英维克信息技术有限公司 | Magnetic isolation asymmetric driving circuit |
-
2015
- 2015-05-23 CN CN201520337159.2U patent/CN204696908U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106300933A (en) * | 2016-08-31 | 2017-01-04 | 苏州迈力电器有限公司 | A kind of transformer primary side waveform that is used for improves circuit |
| CN106300934A (en) * | 2016-08-31 | 2017-01-04 | 苏州迈力电器有限公司 | A kind of transformer primary side waveform for inverter voltage improves circuit |
| CN108667281A (en) * | 2018-07-09 | 2018-10-16 | 珠海格力电器股份有限公司 | Half-bridge drive circuit, chip and air-conditioning |
| CN110299826A (en) * | 2019-07-01 | 2019-10-01 | 上海空间电源研究所 | A kind of spacecraft highly reliable isolated drive circuit of suitable wide duty ratio |
| CN110299826B (en) * | 2019-07-01 | 2020-11-20 | 上海空间电源研究所 | Reliable isolation driving circuit suitable for wide duty ratio for spacecraft |
| CN114070021A (en) * | 2020-08-10 | 2022-02-18 | 深圳市英维克信息技术有限公司 | Magnetic isolation asymmetric driving circuit |
| CN114070021B (en) * | 2020-08-10 | 2024-02-23 | 深圳市英维克信息技术有限公司 | Magnetic isolation asymmetric driving circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151007 Termination date: 20160523 |
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| CF01 | Termination of patent right due to non-payment of annual fee |