CN110299826B - Reliable isolation driving circuit suitable for wide duty ratio for spacecraft - Google Patents
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- CN110299826B CN110299826B CN201910586640.8A CN201910586640A CN110299826B CN 110299826 B CN110299826 B CN 110299826B CN 201910586640 A CN201910586640 A CN 201910586640A CN 110299826 B CN110299826 B CN 110299826B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
Abstract
A reliable isolation driving circuit suitable for wide duty ratio for a spacecraft relates to the field of protection design of a spacecraft high-voltage power supply system; the circuit comprises a drive generating circuit, a drive enhancing circuit, a drive isolating module, a rectifying module and an MOS tube parallel circuit; the drive generating circuit generates two paths of pulse drive currents; the drive enhancing circuit enhances the two paths of pulse drive currents and provides drive currents required by the MOS tube to be switched on; the driving isolation module is used for isolating the driving circuit from the spacecraft power supply and realizing duty ratio expansion; the rectification module provides a path for driving the MOS tube to turn on voltage and turn off current; the MOS tube parallel circuit realizes duty ratio expansion; the invention solves the problems that the high-voltage spacecraft system requires that the MOS tube is in an out-of-control state in the abnormal power failure process of the power supply to cause burning, the duty ratio is required to be between 0 percent and 98 percent and the EMC interference is serious, and effectively improves the working reliability of the spacecraft power supply control equipment.
Description
Technical Field
The invention relates to the field of spacecraft high-voltage power supply system protection design, in particular to a reliable isolation driving circuit suitable for wide duty ratio for a spacecraft.
Background
With the development of aerospace technology, the load power of a spacecraft is continuously increased, and in order to reduce the transmission loss of system power and improve the utilization rate of space energy, a high-voltage power supply bus, for example, a power supply bus of 100V or more than 100V, is generally selected for a spacecraft power supply system with higher load power. In the spacecraft with the high-voltage bus power supply, the bus voltage of a general power supply system is higher than the voltage of a storage battery and is not greatly different from the voltage of the storage battery, so that an MOS (metal oxide semiconductor) tube in control equipment between the bus and the storage battery is in a wide-duty-ratio switching state.
Because the spacecraft high-voltage power supply system has high reliability requirement, the MOS tube in the control equipment is not allowed to lose efficacy in the abnormal power failure process of the power supply, and the function that the high-voltage system and the low-voltage system cannot interfere with each other is realized, the requirements of isolation, high reliability and low EMI are provided for the drive of the MOS tube. Currently there is no reasonable solution to address these technical requirements.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides the high-duty-ratio reliable isolation driving circuit suitable for the spacecraft, solves the problems that the MOS tube is required to be in an out-of-control state to cause burnout, the duty ratio is required to be between 0% and 98% and the EMC interference is serious in the abnormal power failure process of the power supply of the high-voltage spacecraft system, and effectively improves the working reliability of the spacecraft power supply control equipment.
The above purpose of the invention is realized by the following technical scheme:
a reliable isolation driving circuit suitable for wide duty ratio for a spacecraft comprises a driving generation circuit, a driving enhancement circuit, a driving isolation module, a rectification module and an MOS tube parallel circuit; the drive generation circuit generates two paths of pulse drive currents; the drive enhancing circuit enhances the two paths of pulse drive currents and provides drive currents required by the MOS tube to be switched on; the driving isolation module is used for isolating the driving circuit from the spacecraft power supply and realizing duty ratio expansion; the rectification module provides a path for driving the MOS tube to turn on voltage and turn off current; the MOS tube parallel circuit realizes duty ratio expansion; the drive generation circuit, the drive enhancement circuit, the drive isolation module, the rectification module and the MOS tube parallel circuit are sequentially communicated.
In the above reliable isolation driving circuit suitable for wide duty ratio for spacecraft, the driving generating circuit includes a PWM chip N1, a first resistor R1 and a second resistor R2; one end of the first resistor R1 is connected with the PWM chip N1; the other end of the first resistor R1 is connected with the drive enhancing circuit; one end of the second resistor R2 is connected with the PWM chip N1; the other end of the second resistor R2 is connected with the drive enhancing circuit; the first path of pulse driving current generated by the PWM chip N1 is transmitted to the driving enhancement circuit through a first resistor R1; the second pulse driving current generated by the PWM chip N1 is transmitted to the driving enhancement circuit through the second resistor R2.
In the above reliable isolation driving circuit suitable for wide duty ratio for a spacecraft, the driving enhancement circuit includes a power supply Vc, a third resistor R3, a first transistor V1, a second transistor V2, a fourth resistor R4, a third transistor V3 and a fourth transistor V4; one end of the third resistor R3 is connected with the power supply Vc; the other end of the third resistor R3 is connected with the collector of the first triode V1; the base electrode of the first triode V1 is connected with the other end of the first resistor R1; the emitting electrode of the first triode V1 is respectively connected with the emitting electrode of the second triode V2 and the drive isolation module; the base electrode of the second triode V2 is connected with the other end of the first resistor R1; the collector of the second triode V2 is grounded GND; one end of the fourth resistor R4 is connected with the power supply Vc; the other end of the fourth resistor R4 is connected with the collector of the third triode V3; the base of the third triode V3 is connected with the other end of the second resistor R2; an emitting electrode of the third triode V3 is respectively connected with an emitting electrode of the fourth triode V4 and the driving isolation module; the base electrode of the fourth triode V4 is connected with the other end of the second resistor R2; the collector of the fourth transistor V4 is connected to ground GND.
In the above reliable isolation driving circuit suitable for wide duty ratio for spacecraft, the driving isolation module comprises a first transformer T1 and a second transformer T2; wherein, a pin 1 at the primary side of the first transformer T1 is respectively connected with an emitter of a first triode V1, an emitter of a second triode V2 and a pin 1 at the primary side of the second transformer T2; a pin 2 on the primary side of the first transformer T1 is respectively connected with an emitting electrode of a third triode V3, an emitting electrode of a fourth triode V4 and a pin 2 on the primary side of the second transformer T2; a pin 3 of the secondary side of the first transformer T1, a pin 4 of the secondary side of the first transformer T1, a pin 3 of the secondary side of the second transformer T2 and a pin 4 of the secondary side of the second transformer T2 are respectively connected with the rectifying module.
In the above reliable isolation driving circuit suitable for wide duty ratio for a spacecraft, the rectifying module includes a first diode V5, a fifth resistor R5, a sixth resistor R6, a fifth transistor V6, a second diode V7, a seventh resistor R7, an eighth resistor R8, and a sixth transistor V8; the anode of the first diode V5 is connected to pin 3 of the secondary side of the first transformer T1 and one end of the sixth resistor R6, respectively; the anode of the first diode V5 is connected with one end of a fifth resistor R5; the other end of the fifth resistor R5 is respectively connected with an emitting electrode of a fifth triode V6 and an MOS tube parallel circuit; the base electrode of the fifth triode V6 is connected with the other end of the sixth resistor R6; a collector of the fifth triode V6 is respectively connected with a pin 4 of the secondary side of the first transformer T1 and an MOS tube parallel circuit;
the anode of the second diode V7 is connected to the pin 4 of the secondary side of the second transformer T2 and one end of the eighth resistor R8, respectively; the anode of the second diode V7 is connected to one end of the seventh resistor R7; the other end of the seventh resistor R7 is respectively connected with an emitting electrode of the sixth triode V8 and an MOS tube parallel circuit; the base electrode of the sixth triode V8 is connected with the other end of the eighth resistor R8; the collector of the sixth triode V8 is connected to the pin 3 of the secondary side of the second transformer T2 and the MOS transistor in parallel.
In the above reliable isolation driving circuit suitable for wide duty ratio for spacecraft, the MOS transistor parallel circuit includes a first MOS transistor V9, a ninth resistor R9, a second MOS transistor V10 and a tenth resistor R10; the grid electrode of the first MOS transistor V9 is respectively connected with one end of a ninth resistor R9 and the other end of a fifth resistor R5; the source electrode of the first MOS transistor V9 is respectively connected with the other end of the ninth resistor R9, the collector electrode of the fifth triode V6 and the source electrode of the second MOS transistor V10; the drain electrode of the first MOS tube V9 is connected with the drain electrode of the second MOS tube V10;
the grid electrode of the second MOS transistor V10 is respectively connected with one end of a tenth resistor R10 and the other end of a seventh resistor R7; the source of the second MOS transistor V10 is connected to the other end of the tenth resistor R10, the collector of the sixth transistor V8, and the source of the first MOS transistor V9, respectively.
In the reliable isolation driving circuit suitable for the wide duty ratio for the spacecraft, the duty ratios of the first path of pulse driving current and the second path of pulse driving current generated by the PWM chip N1 are both less than 49%; and the phase difference between the first path of pulse driving current and the second path of pulse driving current is 90 degrees.
Compared with the prior art, the invention has the following advantages:
(1) the invention expands the duty ratio of the drive generating circuit, and utilizes the isolated transformer drive circuit, and the drive circuit does not use an energy storage element, and can reliably turn on and turn off the MOS tube in the power-on and power-off processes of the power supply, so that the possibility of over-current or overheating burning of the MOS tube caused by error drive does not exist;
(2) according to the invention, the MOS tube switching-on and switching-off speeds are adjusted, so that the EMC interference of control equipment is reduced;
(3) the invention realizes the duty ratio expansion by connecting the drain source electrode with the MOS tube in parallel, can reduce the current stress of the MOS tube and improve the reliability of the equipment.
Drawings
FIG. 1 is a schematic diagram of an isolation driving circuit according to the present invention;
FIG. 2 is a driving waveform diagram of the isolation driving circuit according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the following figures and specific examples:
the invention provides a wide duty ratio high-reliability isolation driving circuit, which aims to solve the problems that an MOS (metal oxide semiconductor) tube is required to be in an out-of-control state to cause burning in the abnormal power failure process of a power supply, the duty ratio is required to be between 0% and 98%, and EMC (electro magnetic compatibility) interference is serious in a high-voltage spacecraft system, and effectively improves the working reliability of spacecraft power supply control equipment.
As shown in fig. 1, which is a schematic diagram of an isolation driving circuit, it can be known that the isolation driving circuit suitable for a spacecraft with a wide duty ratio and high reliability includes a driving generating circuit, a driving enhancing circuit, a driving isolating module, a rectifying module and a MOS transistor parallel circuit; the drive generation circuit generates two paths of pulse drive currents; the drive enhancing circuit enhances the two paths of pulse drive currents and provides drive currents required by the MOS tube to be switched on; the driving isolation module is used for isolating the driving circuit from the spacecraft power supply and realizing duty ratio expansion; the rectification module provides a path for driving the MOS tube to turn on voltage and turn off current; the MOS tube parallel circuit realizes duty ratio expansion; the drive generation circuit, the drive enhancement circuit, the drive isolation module, the rectification module and the MOS tube parallel circuit are sequentially communicated. The duty ratio of the drive generation circuit is expanded, the isolated transformer is used for driving the circuit, an energy storage element is not used in the driving circuit, the MOS tube can be reliably switched on and off in the power-on and power-off processes of a power supply, and the possibility that the MOS tube is burnt out due to overcurrent or overheating caused by error driving does not exist; and EMC interference of control equipment can be reduced by adjusting the switching-on and switching-off speeds of the MOS tube.
The driving generation circuit comprises a PWM chip N1, a first resistor R1 and a second resistor R2; one end of the first resistor R1 is connected with the PWM chip N1; the other end of the first resistor R1 is connected with the drive enhancing circuit; one end of the second resistor R2 is connected with the PWM chip N1; the other end of the second resistor R2 is connected with the drive enhancing circuit; the first path of pulse driving current generated by the PWM chip N1 is transmitted to the driving enhancement circuit through a first resistor R1; the second pulse driving current generated by the PWM chip N1 is transmitted to the driving enhancement circuit through the second resistor R2.
The driving enhancement circuit comprises a power supply Vc, a third resistor R3, a first triode V1, a second triode V2, a fourth resistor R4, a third triode V3 and a fourth triode V4; one end of the third resistor R3 is connected with the power supply Vc; the other end of the third resistor R3 is connected with the collector of the first triode V1; the base electrode of the first triode V1 is connected with the other end of the first resistor R1; the emitting electrode of the first triode V1 is respectively connected with the emitting electrode of the second triode V2 and the drive isolation module; the base electrode of the second triode V2 is connected with the other end of the first resistor R1; the collector of the second triode V2 is grounded GND; one end of the fourth resistor R4 is connected with the power supply Vc; the other end of the fourth resistor R4 is connected with the collector of the third triode V3; the base of the third triode V3 is connected with the other end of the second resistor R2; an emitting electrode of the third triode V3 is respectively connected with an emitting electrode of the fourth triode V4 and the driving isolation module; the base electrode of the fourth triode V4 is connected with the other end of the second resistor R2; the collector of the fourth transistor V4 is connected to ground GND.
The driving isolation module includes a first transformer T1 and a second transformer T2; wherein, a pin 1 at the primary side of the first transformer T1 is respectively connected with an emitter of a first triode V1, an emitter of a second triode V2 and a pin 1 at the primary side of the second transformer T2; a pin 2 on the primary side of the first transformer T1 is respectively connected with an emitting electrode of a third triode V3, an emitting electrode of a fourth triode V4 and a pin 2 on the primary side of the second transformer T2; a pin 3 of the secondary side of the first transformer T1, a pin 4 of the secondary side of the first transformer T1, a pin 3 of the secondary side of the second transformer T2 and a pin 4 of the secondary side of the second transformer T2 are respectively connected with the rectifying module. The primary side 1 pin and the secondary side 3 pin of the first transformer T1 and the second transformer T2 are homonymous ends of the transformers; the primary side 2 pin and the secondary side 4 pin of the first transformer T1 and the second transformer T2 are the same name ends of the transformers.
The rectifying module comprises a first diode V5, a fifth resistor R5, a sixth resistor R6, a fifth triode V6, a second diode V7, a seventh resistor R7, an eighth resistor R8 and a sixth triode V8; the anode of the first diode V5 is connected to pin 3 of the secondary side of the first transformer T1 and one end of the sixth resistor R6, respectively; the anode of the first diode V5 is connected with one end of a fifth resistor R5; the other end of the fifth resistor R5 is respectively connected with an emitting electrode of a fifth triode V6 and an MOS tube parallel circuit; the base electrode of the fifth triode V6 is connected with the other end of the sixth resistor R6; a collector of the fifth triode V6 is respectively connected with a pin 4 of the secondary side of the first transformer T1 and an MOS tube parallel circuit;
the anode of the second diode V7 is connected to the pin 4 of the secondary side of the second transformer T2 and one end of the eighth resistor R8, respectively; the anode of the second diode V7 is connected to one end of the seventh resistor R7; the other end of the seventh resistor R7 is respectively connected with an emitting electrode of the sixth triode V8 and an MOS tube parallel circuit; the base electrode of the sixth triode V8 is connected with the other end of the eighth resistor R8; the collector of the sixth triode V8 is connected to the pin 3 of the secondary side of the second transformer T2 and the MOS transistor in parallel.
The MOS tube parallel circuit comprises a first MOS tube V9, a ninth resistor R9, a second MOS tube V10 and a tenth resistor R10; the grid electrode of the first MOS transistor V9 is respectively connected with one end of a ninth resistor R9 and the other end of a fifth resistor R5; the source electrode of the first MOS transistor V9 is respectively connected with the other end of the ninth resistor R9, the collector electrode of the fifth triode V6 and the source electrode of the second MOS transistor V10; the drain electrode of the first MOS tube V9 is connected with the drain electrode of the second MOS tube V10;
the grid electrode of the second MOS transistor V10 is respectively connected with one end of a tenth resistor R10 and the other end of a seventh resistor R7; the source of the second MOS transistor V10 is connected to the other end of the tenth resistor R10, the collector of the sixth transistor V8, and the source of the first MOS transistor V9, respectively.
The working principle is as follows:
as shown in fig. 2, which is a driving waveform diagram of the isolation driving circuit, it can be known that the duty ratios of the first path of pulse driving current and the second path of pulse driving current generated by the PWM chip N1 are both less than 49%; and the phase difference between the first path of pulse driving current and the second path of pulse driving current is 90 degrees. The driving current output by the driving chip is enhanced through a triode totem driving structure to provide current required by the switching-on and switching-off of the MOS tubes, after the homonymy ends of the secondary sides of the two paths of transformers of the driving isolation module are reversed, the two MOS tubes are driven simultaneously through the rectification module, the duty ratio is larger than 49%, and a power supply and a driving power supply are isolated to form the driving pulse with the wide duty ratio, and meanwhile, the driving circuit and a spacecraft power supply can be isolated; and the rectifying module forms forward voltage required by actual driving of the MOS tube.
The two paths of working pulse outputs are connected with the drive enhancing circuit, so that the output current of the drive generating circuit chip can be enhanced, and the actual drive current required by the MOS tube to be switched on is provided; in the driving isolation module, a first transformer T1 is used for driving a first MOS transistor V9, a second transformer T2 is used for driving a second MOS transistor V10, a pin 1 on the primary side of the first transformer T1 is connected with a pin 1 on the primary side of a second transformer T2, a pin 2 on the primary side of a first transformer T1 is connected with a pin 2 on the primary side of a second transformer T2, the working waveforms are shown as the waveforms of "primary side 1-2 pins of transformer T1 and T2" in fig. 2, the secondary sides of the first transformer T1 and the second transformer T2 respectively go to two paths of the rectifier modules, and the homonymous terminals of the secondary sides of the transformers are opposite, and the drives with the phase difference of 90 degrees are formed through the rectifying modules, as shown by waveforms of 'V9 grid source' and 'V10 grid source' in figure 2, by driving the first MOS transistor V9 and the second MOS transistor V10 with two parallel drain-source electrodes, the switching states of the MOS transistors with wide duty ratios are formed, as shown by 'V9 drain-source electrode' and 'V10 drain-source electrode' in FIG. 2.
The rectifying module is used for driving two MOS tubes V9 and V10 with drain electrodes and source electrodes connected in parallel, and adjusting the switching speeds of a first MOS tube V9 and a second MOS tube V10 by adjusting the resistance values of a fifth resistor R5 and a seventh resistor R7; the turn-off speed of the first MOS transistor V9 and the turn-off speed of the second MOS transistor V10 are adjusted by adjusting the resistance values of the sixth resistor R6 and the eighth resistor R8, and the turn-on and turn-off speeds can be adjusted according to the EMC characteristics of the environment and the parameters of the MOS transistors.
The driving circuit does not use an energy storage element, the MOS tube can be reliably switched on and off in the power-on and power-off processes of the power supply, and the possibility of over-current or overheating burning of the MOS tube caused by error driving is avoided; the switching-on and switching-off speeds of the MOS tube can be adjusted by adjusting the resistance value of the current-limiting resistor in the driving circuit, the EMC interference of control equipment is reduced, and the reliability of the spacecraft is improved; the drain-source electrode is connected with the MOS tube in parallel to realize duty ratio expansion, the current stress of the MOS tube can be reduced, and the reliability of the equipment is improved. The invention has simple circuit, high reliability and good high-low voltage isolation, and is particularly suitable for spacecraft high-voltage control equipment.
Those skilled in the art will appreciate that those matters not described in detail in the present specification are well known in the art.
Claims (3)
1. The utility model provides a reliable drive circuit that keeps apart of suitable wide duty cycle ratio for spacecraft which characterized in that: the circuit comprises a drive generating circuit, a drive enhancing circuit, a drive isolating module, a rectifying module and an MOS tube parallel circuit; the drive generation circuit generates two paths of pulse drive currents; the drive enhancing circuit enhances the two paths of pulse drive currents and provides drive currents required by the MOS tube to be switched on; the driving isolation module is used for isolating the driving circuit from the spacecraft power supply and realizing duty ratio expansion; the rectification module provides a path for driving the MOS tube to turn on voltage and turn off current; the MOS tube parallel circuit realizes duty ratio expansion; the drive generation circuit, the drive enhancement circuit, the drive isolation module, the rectification module and the MOS tube parallel circuit are sequentially communicated;
the drive generation circuit comprises a PWM chip N1, a first resistor R1 and a second resistor R2; one end of the first resistor R1 is connected with the PWM chip N1; the other end of the first resistor R1 is connected with the drive enhancing circuit; one end of the second resistor R2 is connected with the PWM chip N1; the other end of the second resistor R2 is connected with the drive enhancing circuit; the first path of pulse driving current generated by the PWM chip N1 is transmitted to the driving enhancement circuit through a first resistor R1; the second path of pulse driving current generated by the PWM chip N1 is transmitted to the driving enhancement circuit through a second resistor R2;
the drive enhancement circuit comprises a power supply Vc, a third resistor R3, a first triode V1, a second triode V2, a fourth resistor R4, a third triode V3 and a fourth triode V4; one end of the third resistor R3 is connected with the power supply Vc; the other end of the third resistor R3 is connected with the collector of the first triode V1; the base electrode of the first triode V1 is connected with the other end of the first resistor R1; the emitting electrode of the first triode V1 is respectively connected with the emitting electrode of the second triode V2 and the drive isolation module; the base electrode of the second triode V2 is connected with the other end of the first resistor R1; the collector of the second triode V2 is grounded GND; one end of the fourth resistor R4 is connected with the power supply Vc; the other end of the fourth resistor R4 is connected with the collector of the third triode V3; the base of the third triode V3 is connected with the other end of the second resistor R2; an emitting electrode of the third triode V3 is respectively connected with an emitting electrode of the fourth triode V4 and the driving isolation module; the base electrode of the fourth triode V4 is connected with the other end of the second resistor R2; the collector of the fourth triode V4 is grounded GND;
the drive isolation module includes a first transformer T1 and a second transformer T2; wherein, a pin 1 at the primary side of the first transformer T1 is respectively connected with an emitter of a first triode V1, an emitter of a second triode V2 and a pin 1 at the primary side of the second transformer T2; a pin 2 on the primary side of the first transformer T1 is respectively connected with an emitting electrode of a third triode V3, an emitting electrode of a fourth triode V4 and a pin 2 on the primary side of the second transformer T2; a pin 3 of a secondary side of the first transformer T1, a pin 4 of a secondary side of the first transformer T1, a pin 3 of a secondary side of the second transformer T2 and a pin 4 of a secondary side of the second transformer T2 are respectively connected with the rectifying module;
the rectifying module comprises a first diode V5, a fifth resistor R5, a sixth resistor R6, a fifth triode V6, a second diode V7, a seventh resistor R7, an eighth resistor R8 and a sixth triode V8; the anode of the first diode V5 is connected to pin 3 of the secondary side of the first transformer T1 and one end of the sixth resistor R6, respectively; the anode of the first diode V5 is connected with one end of a fifth resistor R5; the other end of the fifth resistor R5 is respectively connected with an emitting electrode of a fifth triode V6 and an MOS tube parallel circuit; the base electrode of the fifth triode V6 is connected with the other end of the sixth resistor R6; a collector of the fifth triode V6 is respectively connected with a pin 4 of the secondary side of the first transformer T1 and an MOS tube parallel circuit;
the anode of the second diode V7 is connected to the pin 4 of the secondary side of the second transformer T2 and one end of the eighth resistor R8, respectively; the anode of the second diode V7 is connected to one end of the seventh resistor R7; the other end of the seventh resistor R7 is respectively connected with an emitting electrode of the sixth triode V8 and an MOS tube parallel circuit; the base electrode of the sixth triode V8 is connected with the other end of the eighth resistor R8; the collector of the sixth triode V8 is connected to the pin 3 of the secondary side of the second transformer T2 and the MOS transistor in parallel.
2. The high-reliability isolation driving circuit suitable for wide duty ratio for the spacecraft of claim 1, wherein: the MOS tube parallel circuit comprises a first MOS tube V9, a ninth resistor R9, a second MOS tube V10 and a tenth resistor R10; the grid electrode of the first MOS transistor V9 is respectively connected with one end of a ninth resistor R9 and the other end of a fifth resistor R5; the source electrode of the first MOS transistor V9 is respectively connected with the other end of the ninth resistor R9, the collector electrode of the fifth triode V6 and the source electrode of the second MOS transistor V10; the drain electrode of the first MOS tube V9 is connected with the drain electrode of the second MOS tube V10;
the grid electrode of the second MOS transistor V10 is respectively connected with one end of a tenth resistor R10 and the other end of a seventh resistor R7; the source of the second MOS transistor V10 is connected to the other end of the tenth resistor R10, the collector of the sixth transistor V8, and the source of the first MOS transistor V9, respectively.
3. The high-reliability isolation driving circuit suitable for wide duty ratio for the spacecraft of claim 2, wherein: the duty ratio of the first path of pulse driving current and the second path of pulse driving current generated by the PWM chip N1 is less than 49%; and the phase difference between the first path of pulse driving current and the second path of pulse driving current is 90 degrees.
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| CN117294121B (en) * | 2023-11-23 | 2024-03-29 | 深圳市恒运昌真空技术股份有限公司 | E-class constant-frequency power amplifier parallel driving system of inversion switching circuit and radio frequency power supply |
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| CN203445775U (en) * | 2013-08-28 | 2014-02-19 | 北京卫星制造厂 | Large-duty-ratio magnetic isolation drive circuit |
| CN204696908U (en) * | 2015-05-23 | 2015-10-07 | 王霄霞 | A kind of asymmetrical half-bridge isolated drive circuit |
| CN108649932A (en) * | 2018-05-21 | 2018-10-12 | 上海空间电源研究所 | The adjustable transformer isolation driving method of space wide scope duty ratio |
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| CN110299826A (en) | 2019-10-01 |
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