CN103281002B - Based on the solid switch formula high-voltage pulse power source of IGBT series connection - Google Patents
Based on the solid switch formula high-voltage pulse power source of IGBT series connection Download PDFInfo
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- CN103281002B CN103281002B CN201310170964.6A CN201310170964A CN103281002B CN 103281002 B CN103281002 B CN 103281002B CN 201310170964 A CN201310170964 A CN 201310170964A CN 103281002 B CN103281002 B CN 103281002B
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Abstract
The invention discloses a kind of solid switch formula high-voltage pulse power source based on IGBT series connection.Comprise main circuit and control unit; Wherein: the 50kV high voltage direct current in main circuit is connected with process chamber with 64 IGBT series circuits successively, by controlling break-make while 64 series IGBTs, the high-voltage pulse of about 40kV finally can be produced at process chamber two ends; The pwm signal that dsp system in control unit sends is control IGBT switching circuit after PWM amplifying circuit, and the pulse signal exported by IGBT switching circuit is as the input signal of 64 IGBT drive circuit; Inverse-excitation converting circuit output ± 15V voltage in control unit, as the power supply of PWM amplifying circuit and driving chip M57962L, and IGBT protection circuit can protect whole power-supply system by the overcurrent to 64 IGBT series connection, overvoltage protection.
Description
Technical field
The present invention relates to a kind of high-voltage pulse power source of solid switch formula, particularly a kind of solid switch formula high-voltage pulse power source based on IGBT series connection.
Background technology
Pulse power has such feature: the energy of storage with the form of electric energy, is added in load by the short pulse mode of pulse or repetition rate by it.Why Pulse Power Techniques can occur and be able to fast development, are the maturations because of many emerge science technical fields, its demand and the mankind being used to powder technology.
In food service industry, the fresh-keeping problem of various food liquid is a difficult problem for puzzlement industry development.The pasteurization that French scientist Pasteur is founded brings profound change to human society beyond doubt, but adopts liquid towards food sterilizing mild condition but sterilizing in this way not thoroughly, sometimes even can damage local flavor and the nutrition of food.Along with the raising of people's living standard, to the health of food and security requirement more and more higher, propose high-quality, low cost, green novel sterilizing method, utilize high-pressure pulse electric (PEF) technology liquid towards food sterilization to be exactly a kind of wherein method.
Insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) combines the advantage of GTR and MOSFET, have that through-current capability is strong, switching speed is fast, input impedance is high, Heat stability is good and the simple advantage of driving, as semiconductor power switch, there is obvious advantage.At present, the voltage withstand class of IGBT reaches tens kilovolts, but expensive because of it, limits the extensive use of single IGBT in high-power high-voltage occasion.Multiple IGBT series connection low for voltage withstand class are used, not only increases the electric pressure of power inverter, reduce cost, and reduce switching loss.
M57962L is drive the thick film integrated circuit (Hybrid Integrated Circuit For Driving IGBT Modules) that designs of IGBT by Mitsubishi electric corporation.The photoelectrical coupler of 2500V high-isolating is housed in driver module inside, and current foldback circuit and overcurrent protection lead-out terminal, have closure short-circuit protection function.M57962L is a kind of high-speed driving circuit, and drive singal prolongs TPLH and TPLH and is 1.5us to the maximum.The IGBT module of 600V/400V level can be driven.
Because IGBT series component is difficult to make drive singal Complete Synchronization in switching process, cause having occurred certain voltage unbalanced phenomena, along with device bears the increase of voltage, the unbalanced aggravation of voltage, can cause device to damage because of overvoltage equally time serious.And IGBT to bear the superpotential time very short, so should can bear fast shut-off control signal in the superpotential time at IGBT when design protection circuit, in order to avoid IGBT damages.Model is that the fault detect pin that the dsp system of TMS320F28335 carries has this advantage, when fault-signal being detected, can interrupt sending of pwm signal within tens nanoseconds, can available protecting IGBT device.
Summary of the invention
The object of the present invention is to provide a kind of solid switch formula high-voltage pulse power source based on IGBT series connection, this circuit is controlled by dsp system, finally exports the unipolar high voltage pulse of about 40kV.
For achieving the above object, the technical solution used in the present invention is as follows:
The present invention includes main circuit and control circuit, wherein:
1) main circuit: comprise 50kV high-voltage DC power supply, storage capacitor, 64 IGBT series circuits, 64 IGBT buffer circuits and process chambers; 50kV high-voltage DC power supply is in parallel with storage capacitor, and its positive pole is connected with one end of 64 IGBT series circuits, and the other end of 64 IGBT series circuits is connected with one end of process chamber, and the other end of process chamber is connected with the negative pole of 50kV high-voltage DC power supply; 64 IGBT series circuits are connected with 64 IGBT buffer circuits;
2) control unit: comprise full bridge rectifier, filter circuit, 65 inverse-excitation converting circuits, dsp system, PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits and IGBT protection circuit; 220V alternating current is connected with full bridge rectifier, filter circuit successively, and filter circuit is connected with IGBT switching circuit, 65 inverse-excitation converting circuits respectively; The pwm signal that dsp system sends is connected with PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits, 64 IGBT series circuits successively; 64 M57962L series circuits are connected with dsp system through IGBT protection circuit; 65 inverse-excitation converting circuits are connected with 64 M57962L series circuits with PWM amplifying circuit respectively.
IGBTQ2 ~ Q65 model in 64 IGBT series circuits in described main circuit is IGW60T120, the collector electrode of first IGBT is connected with the positive pole of 50kV high-voltage DC power supply, the emitter of first IGBT is connected with the collector electrode of second IGBT, the emitter of previous IGBT is connected with the collector electrode of a rear IGBT, the emitter of the 64th IGBT is connected with process chamber, and process chamber is equipped with food liquid to be sterilized; Each IGBT device is provided with RCD buffer circuit, is connected respectively with the collector and emitter of corresponding IGBT.
Full bridge rectifier in described control unit is made up of four rectifier diode D1 ~ D4, then receives filter circuit; Filter circuit is made up of two electrochemical capacitor C5 and C6 in parallel; The collector electrode that the positive pole of electrochemical capacitor C5 with C6 is the IGBTQ1 of IGW60T120 through resistance R4 and model is connected; PWM amplifying circuit by model be the optocoupler U1 of TLP250, the PNP type triode S2 of model to be the NPN type triode S1 of 2SD718 and model be 2SB668 forms; The pwm signal that dsp system exports is connected with 2 pin of optocoupler U1 through resistance R1,6 pin of optocoupler U1 are connected with the base stage of triode S1, S2 through resistance R2, the collector electrode of triode S1 is connected with 8 pin of optocoupler, and be connected with+15V power supply, the collector electrode of triode S2 is connected with 5 pin of optocoupler U1, and be connected with-15V power supply by voltage-stabiliser tube VS3, the emitter of triode S1 is connected with the emitter of triode S2, and be connected through the grid of resistance R3 and IGBTQ1, the grid of IGBTQ1 be also connected the amplitude limiter be made up of voltage-stabiliser tube VS1, VS2 between emitter.
64 M57962L series circuits in described control unit are the IGBT driving chip U2 ~ U65 of M57962L by 64 models and peripheral circuit forms; The signal that IGBTQ1 emitter exports is as the input signal of 64 M57962L series circuits, be connected with 14 pin of driving chip U2,13 pin of driving chip U2 are connected with 14 pin of driving chip U3,13 pin of previous driving chip are connected with 14 pin of a rear driving chip, and 13 pin of driving chip U65 are connected with the negative pole of electrochemical capacitor; 4 pin of each driving chip are connected with+15V power supply, and be that 1 pin of the corresponding optocoupler of TLP521-1 is connected by current-limiting resistance and model, 2 pin of optocoupler are connected with 8 pin of driving chip, and 6 pin of driving chip are connected with-15V power supply by voltage-stabiliser tube; Each driving chip M57962L has three outputs, first output is 1 pin of M57962L, be connected with the collector electrode of diode with corresponding IGBT by voltage-stabiliser tube, second output is 5 pin of M57962L, be connected by the grid of resistance with corresponding IGBT, 3rd output is M57962L+15V, the holding altogether of-15V power supply, is connected with the emitter of corresponding IGBT; The grid of each IGBT be connected the amplitude limiter be made up of two voltage-stabiliser tubes between emitter.
65 inverse-excitation converting circuits in described control unit have identical circuit structure, comprise high frequency transformer, control chip that switch mosfet pipe that model is IRF840, model are UC3844, be the feedback control circuit that the optocoupler of PC817 and the adjustable precise shunt regulator that is TL431 by model form by model; 65 inverse-excitation converting circuits export the direct voltage of 65+15V and 65-15V respectively, respectively as the power supply of optocoupler TLP250 and 64 driving chip M57962L.
IGBT protection circuit in described control unit comprises 9 models and is 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, the level translator that is made up of resistance R273 and voltage-stabiliser tube VS261; The fault-signal of each IGBT is 3 pin outputs of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, the output signal of door chip U132 ~ U139 respectively as or the input signal of door chip U140, or the output signal of door chip U140 is connected with 2 pin of optocoupler U141 through resistance R274, the output signal of 6 pin of optocoupler U141 is connected with dsp system.
The beneficial effect that the present invention has is:
1, the pwm signal utilizing the control of dsp system to IGBT switching circuit to produce is as the input signal of 64 M57962L series circuits, not only there is the feature that circuit knot is enough simply, cost is low, also make the good synchronism of the maintenance of the input signal of each M57962L, can time difference of gate drive signal of receiving of each IGBT of reduction of limits.
2, utilize inverse-excitation converting circuit to design the power supply of+15V and-15V, there is function admirable, structure is simple, voltage regulation result good, load regulation advantages of higher.
3, the output signal of IGBT protection circuit is connected with the fault detect pin that DSP carries, when this pin detects that input signal is low level, can the sending of quick-speed interruption pwm signal, thus available protecting whole system.
Accompanying drawing explanation
Fig. 1 is system architecture diagram of the present invention.
Fig. 2 is dsp system, PWM amplifying circuit, full bridge rectifier, filter circuit, IGBT switching circuit figure in control unit of the present invention.
Fig. 3 is 64 M57962L series circuits in control unit of the present invention, 64 IGBT series circuits in main circuit, 64 IGBT buffer circuit figure.
Fig. 4 is the single inverse-excitation converting circuit figure in control unit of the present invention.
Fig. 5 is the IGBT protection circuit figure in control unit of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
As shown in Figure 1, the present invention includes main circuit and control circuit, wherein:
1) main circuit: comprise 50kV high-voltage DC power supply, storage capacitor, 64 IGBT series circuits, 64 IGBT buffer circuits and process chambers; 50kV high-voltage DC power supply is in parallel with storage capacitor, and its positive pole is connected with one end of 64 IGBT series circuits, and the other end of 64 IGBT series circuits is connected with one end of process chamber, and the other end of process chamber is connected with the negative pole of 50kV high-voltage DC power supply; 64 IGBT series circuits are connected with 64 IGBT buffer circuits;
2) control unit: comprise full bridge rectifier, filter circuit, 65 inverse-excitation converting circuits, dsp system, PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits and IGBT protection circuit; 220V alternating current is connected with full bridge rectifier, filter circuit successively, and filter circuit is connected with IGBT switching circuit, 65 inverse-excitation converting circuits respectively; The pwm signal that dsp system sends is connected with PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits, 64 IGBT series circuits successively; 64 M57962L series circuits are connected with dsp system through IGBT protection circuit; 65 inverse-excitation converting circuits are connected with 64 M57962L series circuits with PWM amplifying circuit respectively.
As shown in Figure 2, the full bridge rectifier in control unit of the present invention is made up of four rectifier diode D1 ~ D4, then receives filter circuit, filter circuit is made up of two electrochemical capacitor C5 and C6 in parallel, the collector electrode that the positive pole of electrochemical capacitor C5 with C6 is the IGBTQ1 of IGW60T120 through resistance R4 and model is connected, PWM amplifying circuit by model be the optocoupler U1 of TLP250, the PNP type triode S2 of model to be the NPN type triode S1 of 2SD718 and model be 2SB668 forms, the pwm signal that dsp system exports is connected with 2 pin of optocoupler U1 through resistance R1, 6 pin of optocoupler U1 are through resistance R2 and triode S1, the base stage of S2 is connected, the collector electrode of triode S1 is connected with 8 pin of optocoupler, and be connected with+15V power supply, the collector electrode of triode S2 is connected with 5 pin of optocoupler U1, and be connected with-15V power supply by voltage-stabiliser tube VS3, voltage-stabiliser tube plays the effect of step-down,-15V power supply is after voltage-stabiliser tube, the voltage being input to optocoupler 5 pin reduces to-10V, the emitter of triode S1 is connected with the emitter of triode S2, and be connected through the grid of resistance R3 and IGBTQ1, the grid of IGBTQ1 be also connected by voltage-stabiliser tube VS1 between emitter, the amplitude limiter of VS2 composition.
As shown in Figure 3,64 M57962L series circuits in control unit of the present invention are the IGBT driving chip U2 ~ U65 of M57962L by 64 models and peripheral circuit forms; The signal that IGBTQ1 emitter exports is as the input signal of 64 M57962L series circuits, be connected with 14 pin of driving chip U2,13 pin of driving chip U2 are connected with 14 pin of driving chip U3,13 pin of previous driving chip are connected with 14 pin of a rear driving chip, and 13 pin of driving chip U65 are connected with the negative pole of electrochemical capacitor; 4 pin of each driving chip are connected with+15V power supply, and be that 1 pin of the corresponding optocoupler of TLP521-1 is connected by current-limiting resistance and model, 2 pin of optocoupler are connected with 8 pin of driving chip, 6 pin of driving chip are connected with-15V power supply by voltage-stabiliser tube, voltage-stabiliser tube plays the effect of step-down,-15V power supply is after voltage-stabiliser tube, and the voltage being input to driving chip 6 pin reduces to-10V; Each driving chip M57962L has three outputs, first output is 1 pin of M57962L, be connected with the collector electrode of diode with corresponding IGBT by voltage-stabiliser tube, second output is 5 pin of M57962L, be connected by the grid of resistance with corresponding IGBT, 3rd output is M57962L+15V, the holding altogether of-15V power supply, is connected with the emitter of corresponding IGBT; The grid of each IGBT be connected the amplitude limiter be made up of two voltage-stabiliser tubes between emitter.As shown in Figure 3, IGBTQ2 ~ Q65 model in 64 IGBT series circuits in main circuit of the present invention is IGW60T120, the collector electrode of first IGBT is connected with the positive pole of 50kV high-voltage DC power supply, the emitter of first IGBT is connected with the collector electrode of second IGBT, the emitter of previous IGBT is connected with the collector electrode of a rear IGBT, the emitter of the 64th IGBT is connected with process chamber, and process chamber is equipped with food liquid to be sterilized; Each IGBT device is provided with RCD buffer circuit, is connected respectively with the collector and emitter of corresponding IGBT.
As shown in Figure 4,65 inverse-excitation converting circuits in control unit of the present invention have identical circuit structure, comprise high frequency transformer, control chip that switch mosfet pipe that model is IRF840, model are UC3844, be the feedback control circuit that the optocoupler of PC817 and the adjustable precise shunt regulator that is TL431 by model form by model; 65 inverse-excitation converting circuits export the direct voltage of 65+15V and 65-15V respectively, respectively as the power supply of optocoupler TLP250 and 64 driving chip M57962L.
As shown in Figure 4,220V alternating voltage, after rectifying and wave-filtering, obtains the direct voltage of about 300V, for 7 pin of chip UC3844 provide voltage after the soft starting circuit that resistance R261, R262, electric capacity C198 form.
As shown in Figure 4, the galvanic positive pole of about 300V successively through the armature winding of high frequency transformer T1, model be the fast recovery diode VD131 of HER107, model is the negative pole that MOSFET switching tube Q66, the current-limiting resistance R266 of IRF840 receives direct voltage, under the chip U130 control that model is UC3844, the periodic conducting of MOSFET switching tube Q66 and cut-off, and producing two pulse signals respectively at two secondary winding of high frequency transformer, two pulse signals is respectively via the direct voltage of exportable+15V after two filter capacitor filtering and-15V.
As shown in Figure 4, inverse-excitation converting circuit feedback circuit by model be the optocoupler U131 of PC817, model is that the adjustable precise shunt regulator K1 of TL431 and the resistance-capacitance network that is attached thereto are formed.+ 15V output voltage obtains sampled voltage after resistance R270, R271 dividing potential drop, the 2.5V reference voltage that this sampled voltage and TL431 provide compares, when output voltage (+15V) is normal, the 2.5V reference voltage that sampled voltage and TL431 provide is equal, then the K electrode potential of TL431 is constant, the electric current flowing through optocoupler CE is constant, the 2 pin current potentials of UC3844 are stablized, the duty ratio exporting driven MOS FET switch pipe is constant, output voltage stabilization is at+15V, because two of high frequency transformer T1 secondary winding turns are the same, also stablize so export-15V voltage; As output voltage+15V because when certain reason is higher, sampled voltage can be greater than 2.5V, now the K electrode potential of TL431 declines, the electric current flowing through optocoupler PC817 diode increases, thus the electric current flowing through optocoupler CE increases, the 2 pin current potentials of UC3844 decline, and the duty ratio that 6 pin export driving pulse declines, output voltage (+15V) reduces, and completes feedback regulation process.
As shown in Figure 5, the IGBT protection circuit in control unit of the present invention comprises 9 models and is 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, the level translator that is made up of resistance R273 and voltage-stabiliser tube VS261, the fault-signal of each IGBT is 3 pin outputs of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, respectively with or 2 pin of door chip U132 ~ U139, 3 pin, 4 pin, 5 pin, 9 pin, 10 pin, 11 pin, 12 pin are connected, door chip U132 ~ U139 separately 1 pin output signal respectively as or the input signal of door chip U140, respectively with or 2 pin of door chip U140, 3 pin, 4 pin, 5 pin, 9 pin, 10 pin, 11 pin, 12 pin are connected, or the output signal of 1 pin of door chip U140 is connected with 2 pin of optocoupler U141 through resistance R274, the output signal of 6 pin of optocoupler U141 is connected with the fault detect pin of dsp system.
The course of work of the present invention is as follows:
50kV high voltage direct current is after storage capacitor energy storage, be connected with 64 IGBT series circuits, turn on and off while controlling 64 IGBT, can produce the high-voltage pulse of about 40kV at process chamber two ends, the positive pole of high-voltage pulse is sent by the emitter of last IGBT in 64 series IGBTs.
The control signal of 64 IGBT series circuits is produced by IGBT switching circuit, IGBT switching circuit is controlled by dsp system, dsp system output frequency is f, duty ratio is the pwm signal of d, and pass through the break-make of IGBTQ1 in PWM amplifying circuit control IGBT switching circuit, it is f that the emitter of IGBTQ1 correspondingly produces frequency, duty ratio is the pulse signal of d, this signal is as the input signal of 64 M57962L series circuits, control turning on and off of 64 series IGBT Q1 ~ Q64 simultaneously, finally producing size by the emitter of the 64th IGBT is 40kV, frequency is f, duty ratio is the unipolar high voltage pulse of d.
IGBT protection circuit comprises 9 models and is 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, the level translator that is made up of resistance R273 and voltage-stabiliser tube VS261; The fault-signal of each IGBT is 3 pin outputs of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, the output signal of 1 pin of door chip U132 ~ U139 respectively as or the input signal of door chip U140, or the output signal of 1 pin of door chip U140 is connected with 2 pin of optocoupler U141 through resistance R274, the output signal of 6 pin of optocoupler U141 is connected with the fault detect pin of dsp system; The level translator effect be made up of resistance R273 and voltage-stabiliser tube VS261 is 3.3V power supply by 5V Power convert, power to optocoupler FOD260L, during the 2 pin input high level of optocoupler FOD260L, 6 pin output low levels, during the 2 pin input low level of optocoupler FOD260L, 6 pin export high level; When IGBT normally works, corresponding optocoupler TLP521-1 does not work, 3 pin output low level signals, and when over-voltage and over-current appears in IGBT, corresponding optocoupler TLP521-1 starts working, and 3 pin become high level signal; Therefore when 64 IGBT normally work, 3 pin of optocoupler TLP251-1 export the low signal of telecommunication and put down, and 2 pin of input optocoupler FOD260 are low level signal, and its 6 pin exports high level signal, the fault detect pin of dsp system detects high level signal, continues to send pwm signal; When there being fault in 64 IGBT; 3 pin of corresponding optocoupler TLP251-1 become high level signal; 2 pin of input optocoupler FOD260L become high level signal; its 6 pin output low level signal; the fault detect pin of dsp system detects low level signal; interrupt sending of pwm signal immediately, IGBT no longer works, thus the whole power-supply system of available protecting.
Claims (5)
1., based on a solid switch formula high-voltage pulse power source for IGBT series connection, it is characterized in that, comprise main circuit and control unit; Wherein:
1) main circuit: comprise 50kV high-voltage DC power supply, storage capacitor, 64 IGBT series circuits, 64 IGBT buffer circuits and process chambers; 50kV high-voltage DC power supply is in parallel with storage capacitor, and its positive pole is connected with one end of 64 IGBT series circuits, and the other end of 64 IGBT series circuits is connected with one end of process chamber, and the other end of process chamber is connected with the negative pole of 50kV high-voltage DC power supply; 64 IGBT series circuits are connected with 64 IGBT buffer circuits;
2) control unit: comprise full bridge rectifier, filter circuit, 65 inverse-excitation converting circuits, dsp system, PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits and IGBT protection circuit; 220V alternating current is connected with full bridge rectifier, filter circuit successively, and filter circuit is connected with IGBT switching circuit, 65 inverse-excitation converting circuits respectively; The pwm signal that dsp system sends is connected with PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits, 64 IGBT series circuits successively; 64 M57962L series circuits are connected with dsp system through IGBT protection circuit; 65 inverse-excitation converting circuits are connected with 64 M57962L series circuits with PWM amplifying circuit respectively;
Full bridge rectifier in described control unit is made up of four rectifier diode D1 ~ D4, then receives filter circuit, filter circuit is made up of two electrochemical capacitor C5 and C6 in parallel, the drain electrode that the positive pole of electrochemical capacitor C5 with C6 is the IGBTQ1 of IGW60T120 through resistance R4 and model is connected, PWM amplifying circuit by model be the optocoupler U1 of TLP250, the PNP type triode S2 of model to be the NPN type triode S1 of 2SD718 and model be 2SB668 forms, the pwm signal that dsp system exports is connected with 2 pin of optocoupler U1 through resistance R1, 6 pin of optocoupler U1 are through resistance R2 and triode S1, the base stage of S2 is connected, the collector electrode of triode S1 is connected with 8 pin of optocoupler, and be connected with+15V power supply, the collector electrode of triode S2 is connected with 5 pin of optocoupler U1, and be connected with-15V power supply by voltage-stabiliser tube VS3, the emitter of triode S1 is connected with the emitter of triode S2, and be connected through the grid of resistance R3 and IGBTQ1, the grid of IGBTQ1 be also connected by voltage-stabiliser tube VS1 between source electrode, the amplitude limiter of VS2 composition, 64 M57962L series circuits in described control unit are the IGBT driving chip U2 ~ U65 of M57962L by 64 models and peripheral circuit forms, source electrode and the model of IGBTQ1 are that 14 pin of the IGBT driving chip U2 of M57962L are connected.
2. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1, it is characterized in that: the IGBTQ2 ~ Q65 model in 64 IGBT series circuits in described main circuit is IGW60T120, the drain electrode of first IGBT is connected with the positive pole of 50kV high-voltage DC power supply, the source electrode of first IGBT is connected with the drain electrode of second IGBT, the source electrode of previous IGBT is connected with the drain electrode of a rear IGBT, the source electrode of the 64th IGBT is connected with process chamber, and process chamber is equipped with food liquid to be sterilized; Each IGBT device is provided with RCD buffer circuit, is connected respectively with the drain electrode of corresponding IGBT with source electrode.
3. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1, it is characterized in that: the signal that described IGBTQ1 source electrode exports is as the input signal of 64 M57962L series circuits, be connected with 14 pin of driving chip U2,13 pin of driving chip U2 are connected with 14 pin of driving chip U3,13 pin of previous driving chip are connected with 14 pin of a rear driving chip, and 13 pin of driving chip U65 are connected with the negative pole of electrochemical capacitor C5 with C6 in parallel of two in filter circuit; 4 pin of each driving chip are connected with+15V power supply, and be that 1 pin of the corresponding optocoupler of TLP521-1 is connected by current-limiting resistance and model, 2 pin of optocoupler are connected with 8 pin of driving chip, and 6 pin of driving chip are connected with-15V power supply by voltage-stabiliser tube; Each driving chip M57962L has three outputs, first output is 1 pin of M57962L, be connected with the drain electrode of diode with corresponding IGBT by voltage-stabiliser tube, second output is 5 pin of M57962L, be connected by the grid of resistance with corresponding IGBT, 3rd output is M57962L+15V, the holding altogether of-15V power supply, is connected with the source electrode of corresponding IGBT; The grid of each IGBT be connected the amplitude limiter be made up of two voltage-stabiliser tubes between source electrode.
4. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1, it is characterized in that: 65 inverse-excitation converting circuits in described control unit have identical circuit structure, comprise high frequency transformer, control chip that switch mosfet pipe that model is IRF840, model are UC3844, be the feedback control circuit that the optocoupler of PC817 and the adjustable precise shunt regulator that is TL431 by model form by model; 65 inverse-excitation converting circuits export the direct voltage of 65+15V and 65-15V respectively, respectively as the power supply of optocoupler TLP250 and 64 driving chip M57962L.
5. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1, is characterized in that: the IGBT protection circuit in described control unit comprises 9 models and is 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, the level translator that is made up of resistance R273 and voltage-stabiliser tube VS261; The fault-signal of each IGBT is 3 pin outputs of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, the output signal of door chip U132 ~ U139 respectively as or the input signal of door chip U140, or the output signal of door chip U140 is connected with 2 pin of optocoupler U141 through resistance R274, the output signal of 6 pin of optocoupler U141 is connected with dsp system.
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| CN105939159A (en) * | 2015-12-27 | 2016-09-14 | 天津市品通电力科技有限公司 | PWM analog DA output circuit for excitation speed-adjusting system |
| CN106130332A (en) * | 2016-07-19 | 2016-11-16 | 合肥联信电源有限公司 | A kind of emergency power supply high-power IGBT current foldback circuit |
| CN107565845B (en) * | 2017-08-30 | 2019-10-11 | 西安交通大学 | A kind of load matching device and method of high-voltage pulse power source |
| CN108462482B (en) * | 2018-02-10 | 2020-10-27 | 西安交通大学 | Device and method for generating bipolar high-voltage pulse |
| CN109039140A (en) * | 2018-10-22 | 2018-12-18 | 中国工程物理研究院应用电子学研究所 | A kind of compact high-voltage switch gear component |
| CN109921772B (en) * | 2019-04-19 | 2023-12-15 | 骆驼集团武汉光谷研发中心有限公司 | Input signal holding circuit |
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| CN102611413A (en) * | 2012-03-16 | 2012-07-25 | 浙江大学 | Insulated gate bipolar translator (IGBT) series connection type high-voltage pulse generator |
| CN103036469A (en) * | 2012-12-07 | 2013-04-10 | 浙江大学 | High-voltage pulse power supply |
| CN203278690U (en) * | 2013-05-10 | 2013-11-06 | 浙江大学 | A solid-state switch type high-voltage pulse power supply based on IGBTs connected in series |
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| JP3623181B2 (en) * | 2001-08-27 | 2005-02-23 | オリジン電気株式会社 | High voltage semiconductor switch device and high voltage generator |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611413A (en) * | 2012-03-16 | 2012-07-25 | 浙江大学 | Insulated gate bipolar translator (IGBT) series connection type high-voltage pulse generator |
| CN103036469A (en) * | 2012-12-07 | 2013-04-10 | 浙江大学 | High-voltage pulse power supply |
| CN203278690U (en) * | 2013-05-10 | 2013-11-06 | 浙江大学 | A solid-state switch type high-voltage pulse power supply based on IGBTs connected in series |
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