CN103281002A - Solid switch type high-voltage pulse power supply based on insulated gate bipolar transistor (IGBT) series connection - Google Patents
Solid switch type high-voltage pulse power supply based on insulated gate bipolar transistor (IGBT) series connection Download PDFInfo
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Abstract
The invention discloses a solid switch type high-voltage pulse power supply based on insulated gate bipolar transistor (IGBT) series connection. The solid switch type high-voltage pulse power supply comprises a main circuit and a control unit, wherein 50kV high-voltage direct current in the main circuit is connected with sixty-four IGBT series connection circuits and a processing chamber sequentially; by simultaneously connection and disconnection control over the sixty-four series connection IGBTs, high-voltage pulses of 40kV or so can be finally generated at two ends of the processing chamber; a pulse width modulation (PWM) signal sent by a digital signal processing (DSP) system in the control unit passes through a PWM amplification circuit and then controls an IGBT switch circuit; the pulse signal output by the IGBT switch circuit can be used as an input signal of the sixty-four IGBT driving circuits; a flyback conversion circuit in the control unit outputs +/- 15V voltage serving as a power supply for the PWM amplification circuit and a driving chip M57962L; and an IGBT protection circuit can protect the whole power system by performing overcurrent and overvoltage protection on the sixty-four IGBTs.
Description
Technical field
The present invention relates to a kind of high-voltage pulse power source of solid switch formula, particularly a kind of solid switch formula high-voltage pulse power source based on the IGBT series connection.
Background technology
Pulse power has such characteristics: it is the form of energy stored with electric energy, is added in the load with the short pulse mode of pulse or repetition rate.Why Pulse Power Techniques can fast development occur and be able to, are to its demand and the human maturation of using the electric energy technology because of many emerge science technical fields.
In food service industry, the fresh-keeping problem of various food liquids is difficult problems of puzzlement industry development.The pasteurization that the French scientist Pasteur is founded has been brought deep variation to human society beyond doubt, but adopt this method liquid towards food sterilizing mild condition but sterilize not thorough, sometimes even can damage flavours in food products and nutrition.Along with the raising of people's living standard, more and more higher to health and the security requirement of food, high-quality, low-cost, green novel sterilizing method has been proposed, utilizing high-pressure pulse electric (PEF) technology liquid towards food sterilization is exactly a kind of method wherein.
Insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) combines the advantage of GTR and MOSFET, have that through-current capability is strong, switching speed is fast, input impedance is high, Heat stability is good and the simple advantage of driving, have remarkable advantages as the semiconductor power switch.At present, the voltage withstand class of IGBT reaches tens kilovolts, but expensive because of it, has limited single IGBT in the extensive use of high-power high voltage occasion.A plurality of IGBT series connection that voltage withstand class is low are used, and have not only improved the electric pressure of power inverter, have reduced cost, and have reduced switching loss.
M57962L is to be to drive the thick film integrated circuit (Hybrid Integrated Circuit For Driving IGBT Modules) that IGBT designs by the Mitsubishi electric corporation.The photoelectrical coupler of 2500V high-isolating is housed in driver module inside, and current foldback circuit and overcurrent protection lead-out terminal have the closure short-circuit protection function.M57962L is a kind of high-speed driving circuit, and the driving signal prolongs TPLH and TPLH is 1.5us to the maximum.Can drive the IGBT module of 600V/400V level.
Because the IGBT series component is difficult in switching process make that the driving signal is synchronous fully, has caused occurring certain voltage unbalanced phenomena, along with the increase that device bears voltage, the unbalanced aggravation of voltage can cause device to damage because of overvoltage when serious equally.And that IGBT bears the superpotential time is very short, thus should be in IGBT can bear the superpotential time when the design protection circuit fast shut-off control signal, in order to avoid IGBT damages.Model is that the fault detect pin that the dsp system of TMS320F28335 carries has this advantage, when detecting fault-signal, can interrupt sending of pwm signal in tens nanoseconds, can effectively protect the IGBT device.
Summary of the invention
The object of the present invention is to provide a kind of solid switch formula high-voltage pulse power source based on the IGBT series connection, this circuit is controlled by dsp system, exports the unipolarity high-voltage pulse about 40kV at last.
For achieving the above object, the technical solution used in the present invention is as follows:
The present invention includes main circuit and control circuit, wherein:
1) main circuit: comprise 50kV high-voltage DC power supply, storage capacitor, 64 IGBT series circuits, 64 IGBT buffer circuits and process chamber; The 50kV high-voltage DC power supply is in parallel with storage capacitor, and its positive pole links to each other with an end of 64 IGBT series circuits, and the other end of 64 IGBT series circuits links to each other with an end of process chamber, and the other end of process chamber links to each other with the negative pole of 50kV high-voltage DC power supply; 64 IGBT series circuits link to each other with 64 IGBT buffer circuits;
2) control unit: comprise full bridge rectifier, filter circuit, 65 inverse-excitation converting circuits, dsp system, PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits and IGBT protective circuit; The 220V alternating current links to each other with full bridge rectifier, filter circuit successively, and filter circuit links to each other with IGBT switching circuit, 65 inverse-excitation converting circuits respectively; The pwm signal that dsp system sends links to each other with PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits, 64 IGBT series circuits successively; 64 M57962L series circuits link to each other with dsp system through the IGBT protective circuit; 65 inverse-excitation converting circuits link to each other with 64 M57962L series circuits with the PWM amplifying circuit respectively.
IGBTQ2 ~ Q65 model in 64 IGBT series circuits in the described main circuit is IGW60T120, the collector electrode of first IGBT links to each other with the positive pole of 50kV high-voltage DC power supply, the emitter of first IGBT links to each other with the collector electrode of second IGBT, the emitter of previous IGBT links to each other with the collector electrode of a back IGBT, the emitter of the 64th IGBT links to each other with process chamber, and process chamber is equipped with the food liquid for the treatment of sterilization; Each IGBT device is provided with the RCD buffer circuit, links to each other with the collector and emitter of corresponding IGBT respectively.
Full bridge rectifier in the described control unit is made up of four rectifier diode D1～D4, receives filter circuit again; Filter circuit is made up of electrochemical capacitor C5 and the C6 of two parallel connections; The positive pole of electrochemical capacitor C5 and C6 is that the collector electrode of the IGBTQ1 of IGW60T120 links to each other through resistance R 4 and model; The PWM amplifying circuit is that the positive-negative-positive triode S2 that the optocoupler U1 of TLP250, NPN type triode S1 that model is 2SD718 and model are 2SB668 forms by model; The pwm signal of dsp system output links to each other with 2 pin of optocoupler U1 through resistance R 1,6 pin of optocoupler U1 link to each other through the base stage of resistance R 2 with triode S1, S2, the collector electrode of triode S1 links to each other with 8 pin of optocoupler, and link to each other with+15V power supply, the collector electrode of triode S2 links to each other with 5 pin of optocoupler U1, and link to each other with-15V power supply by voltage-stabiliser tube VS3, the emitter of triode S1 links to each other with the emitter of triode S2, and link to each other with the grid of IGBTQ1 through resistance R 3, also be connected the amplitude limiter of being formed by voltage-stabiliser tube VS1, VS2 between the grid of IGBTQ1 and emitter.
64 M57962L series circuits in the described control unit are made up of IGBT driving chip U2 ~ U65 and peripheral circuit thereof that 64 models are M57962L; The signal of IGBTQ1 emitter output is as the input signal of 64 M57962L series circuits, link to each other with 14 pin that drive chip U2,13 pin that drive chip U2 link to each other with 14 pin that drive chip U3,13 pin of previous driving chip link to each other with back 14 pin that drive chip, and 13 pin that drive chip U65 link to each other with the negative pole of electrochemical capacitor; Each 4 pin that drive chip links to each other with+15V power supply, and be that 1 pin of the corresponding optocoupler of TLP521-1 links to each other by current-limiting resistance and model, 2 pin of optocoupler link to each other with 8 pin that drive chip, and 6 pin of driving chip link to each other with-15V power supply by voltage-stabiliser tube; Each drives chip M57962L three outputs, first output is 1 pin of M57962L, link to each other with the collector electrode of corresponding IGBT with diode by voltage-stabiliser tube, second output is 5 pin of M57962L, link to each other with the grid of corresponding IGBT by resistance, the 3rd output be M57962L+15V ,-the holding of 15V power supply commonly, link to each other with the emitter of corresponding IGBT; Be connected the amplitude limiter of being formed by two voltage-stabiliser tubes between the grid of each IGBT and emitter.
65 inverse-excitation converting circuits in the described control unit have identical circuit structure, comprise that high frequency transformer, model are the switch mosfet pipe of IRF840, control chip that model is UC3844, are the optocoupler of PC817 and are the feedback control circuit that the adjustable accurate shunt regulator of TL431 is formed by model by model; 65 inverse-excitation converting circuits are exported the direct voltage of 65+15V and 65-15V respectively, respectively as optocoupler TLP250 and 64 power supplies that drive chip M57962L.
IGBT protective circuit in the described control unit comprises the level translator that 9 models are 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, be made of resistance R 273 and voltage-stabiliser tube VS261; The fault-signal of each IGBT is the 3 pin output of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, the output signal of door chip U132 ~ U139 respectively as or the input signal of door chip U140, or the output signal of door chip U140 links to each other with 2 pin of optocoupler U141 through resistance R 274, and the output signal of 6 pin of optocoupler U141 links to each other with dsp system.
The beneficial effect that the present invention has is:
1, utilize pwm signal that dsp system produces the control of IGBT switching circuit as the input signal of 64 M57962L series circuits, not only have the characteristics that the circuit knot is enough simply, cost is low, also make the maintenance synchronism preferably of input signal of each M57962L, the time difference of the gate drive signal that each IGBT of reduction that can big limit receives.
2, utilize inverse-excitation converting circuit design+15V and-power supply of 15V, have function admirable, simple in structure, voltage regulation result good, the load regulation advantages of higher.
3, the output signal of IGBT protective circuit links to each other with the fault detect pin that DSP carries, and when this pin detects input signal and is low level, can interrupt sending of pwm signal fast, thereby effectively protect whole system.
Description of drawings
Fig. 1 is system architecture diagram of the present invention.
Fig. 2 is dsp system, PWM amplifying circuit, full bridge rectifier, filter circuit, the IGBT switching circuit figure in the control unit of the present invention.
Fig. 3 is 64 M57962L series circuits, 64 IGBT series circuits in the main circuit, 64 the IGBT buffer circuit figure in the control unit of the present invention.
Fig. 4 is the single inverse-excitation converting circuit figure in the control unit of the present invention.
Fig. 5 is the IGBT protective circuit figure in the control unit of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
As shown in Figure 1, the present invention includes main circuit and control circuit, wherein:
1) main circuit: comprise 50kV high-voltage DC power supply, storage capacitor, 64 IGBT series circuits, 64 IGBT buffer circuits and process chamber; The 50kV high-voltage DC power supply is in parallel with storage capacitor, and its positive pole links to each other with an end of 64 IGBT series circuits, and the other end of 64 IGBT series circuits links to each other with an end of process chamber, and the other end of process chamber links to each other with the negative pole of 50kV high-voltage DC power supply; 64 IGBT series circuits link to each other with 64 IGBT buffer circuits;
2) control unit: comprise full bridge rectifier, filter circuit, 65 inverse-excitation converting circuits, dsp system, PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits and IGBT protective circuit; The 220V alternating current links to each other with full bridge rectifier, filter circuit successively, and filter circuit links to each other with IGBT switching circuit, 65 inverse-excitation converting circuits respectively; The pwm signal that dsp system sends links to each other with PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits, 64 IGBT series circuits successively; 64 M57962L series circuits link to each other with dsp system through the IGBT protective circuit; 65 inverse-excitation converting circuits link to each other with 64 M57962L series circuits with the PWM amplifying circuit respectively.
As shown in Figure 2, the full bridge rectifier in the control unit of the present invention is made up of four rectifier diode D1～D4, receives filter circuit again; Filter circuit is made up of electrochemical capacitor C5 and the C6 of two parallel connections; The positive pole of electrochemical capacitor C5 and C6 is that the collector electrode of the IGBTQ1 of IGW60T120 links to each other through resistance R 4 and model; The PWM amplifying circuit is that the positive-negative-positive triode S2 that the optocoupler U1 of TLP250, NPN type triode S1 that model is 2SD718 and model are 2SB668 forms by model; The pwm signal of dsp system output links to each other with 2 pin of optocoupler U1 through resistance R 1,6 pin of optocoupler U1 are through resistance R 2 and triode S1, the base stage of S2 links to each other, the collector electrode of triode S1 links to each other with 8 pin of optocoupler, and link to each other with+15V power supply, the collector electrode of triode S2 links to each other with 5 pin of optocoupler U1, and link to each other with-15V power supply by voltage-stabiliser tube VS3, voltage-stabiliser tube plays the effect of step-down,-15V power supply is behind voltage-stabiliser tube, the voltage that is input to optocoupler 5 pin is reduced to-10V, the emitter of triode S1 links to each other with the emitter of triode S2, and link to each other with the grid of IGBTQ1 through resistance R 3, also be connected by voltage-stabiliser tube VS1 between the grid of IGBTQ1 and emitter, the amplitude limiter that VS2 forms.
As shown in Figure 3,64 M57962L series circuits in the control unit of the present invention are made up of IGBT driving chip U2 ~ U65 and peripheral circuit thereof that 64 models are M57962L; The signal of IGBTQ1 emitter output is as the input signal of 64 M57962L series circuits, link to each other with 14 pin that drive chip U2,13 pin that drive chip U2 link to each other with 14 pin that drive chip U3,13 pin of previous driving chip link to each other with back 14 pin that drive chip, and 13 pin that drive chip U65 link to each other with the negative pole of electrochemical capacitor; Each 4 pin that drive chip links to each other with+15V power supply, and be that 1 pin of the corresponding optocoupler of TLP521-1 links to each other by current-limiting resistance and model, 2 pin of optocoupler link to each other with 8 pin that drive chip, 6 pin that drive chip link to each other with-15V power supply by voltage-stabiliser tube, voltage-stabiliser tube plays the effect of step-down,-15V power supply is input to the voltage that drives chip 6 pin and reduces to-10V behind voltage-stabiliser tube; Each drives chip M57962L three outputs, first output is 1 pin of M57962L, link to each other with the collector electrode of corresponding IGBT with diode by voltage-stabiliser tube, second output is 5 pin of M57962L, link to each other with the grid of corresponding IGBT by resistance, the 3rd output be M57962L+15V ,-the holding of 15V power supply commonly, link to each other with the emitter of corresponding IGBT; Be connected the amplitude limiter of being formed by two voltage-stabiliser tubes between the grid of each IGBT and emitter.As shown in Figure 3, IGBTQ2 ~ Q65 model in 64 IGBT series circuits in the main circuit of the present invention is IGW60T120, the collector electrode of first IGBT links to each other with the positive pole of 50kV high-voltage DC power supply, the emitter of first IGBT links to each other with the collector electrode of second IGBT, the emitter of previous IGBT links to each other with the collector electrode of a back IGBT, the emitter of the 64th IGBT links to each other with process chamber, and process chamber is equipped with the food liquid for the treatment of sterilization; Each IGBT device is provided with the RCD buffer circuit, links to each other with the collector and emitter of corresponding IGBT respectively.
As shown in Figure 4,65 inverse-excitation converting circuits in the control unit of the present invention have identical circuit structure, comprise that high frequency transformer, model are the switch mosfet pipe of IRF840, control chip that model is UC3844, are the optocoupler of PC817 and are the feedback control circuit that the adjustable accurate shunt regulator of TL431 is formed by model by model; 65 inverse-excitation converting circuits are exported the direct voltage of 65+15V and 65-15V respectively, respectively as optocoupler TLP250 and 64 power supplies that drive chip M57962L.
As shown in Figure 4, the 220V alternating voltage obtains the direct voltage about 300V behind rectifying and wave-filtering, and 7 pin for chip UC3844 behind the soft starting circuit that resistance R 261, R262, capacitor C 198 are formed provide voltage.
As shown in Figure 4, galvanic positive pole about 300V is successively through the elementary winding of high frequency transformer T1, the fast recovery diode VD131 that model is HER107, the MOSFET switching tube Q66 that model is IRF840, the negative pole that current-limiting resistance R266 receives direct voltage, be under the chip U130 control of UC3844 in model, the periodic conducting of MOSFET switching tube Q66 and ending, and produce two pulse signals respectively at two secondary winding of high frequency transformer, two pulse signals respectively via exportable+15V after two filter capacitor filtering and-direct voltage of 15V.
As shown in Figure 4, the feedback circuit of inverse-excitation converting circuit is that optocoupler U131, the model of PC817 is that the adjustable accurate shunt regulator K1 of TL431 and the resistance-capacitance network that is attached thereto constitute by model.+ 15V output voltage obtains sampled voltage after resistance R 270, R271 dividing potential drop, the 2.5V reference voltage that this sampled voltage and TL431 provide compares, when output voltage (+15V) just often, sampled voltage equates with the 2.5V reference voltage that TL431 provides, then the K electrode potential of TL431 is constant, the electric current that flows through optocoupler CE is constant, the 2 pin current potentials of UC3844 are stable, the duty ratio of output driven MOS FET switching tube is constant, output voltage stabilization is at+15V, because two secondary winding numbers of turn of high frequency transformer T1 are the same, so output-15V voltage is also stable; When output voltage+15V is higher because of certain reason, sampled voltage can be greater than 2.5V, this moment, the K electrode potential of TL431 descended, the electric current that flows through optocoupler PC817 diode increases, thereby the electric current that flows through optocoupler CE increases, and the 2 pin current potentials of UC3844 descend, and the duty ratio of 6 pin output driving pulse descends, output voltage (+15V) reduce, finish the feedback regulation process.
As shown in Figure 5, the IGBT protective circuit in the control unit of the present invention comprises the level translator that 9 models are 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, be made of resistance R 273 and voltage-stabiliser tube VS261; The fault-signal of each IGBT is the 3 pin output of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, respectively with or 2 pin of door chip U132 ~ U139,3 pin, 4 pin, 5 pin, 9 pin, 10 pin, 11 pin, 12 pin link to each other, door chip U132 ~ U139 separately 1 pin output signal respectively as or the input signal of door chip U140, respectively with or 2 pin of door chip U140,3 pin, 4 pin, 5 pin, 9 pin, 10 pin, 11 pin, 12 pin link to each other, or the output signal of 1 pin of door chip U140 links to each other with 2 pin of optocoupler U141 through resistance R 274, and the output signal of 6 pin of optocoupler U141 links to each other with the fault detect pin of dsp system.
The course of work of the present invention is as follows:
The 50kV high voltage direct current is after the storage capacitor energy storage, link to each other with 64 IGBT series circuits, turn on and off when controlling 64 IGBT, can produce the high-voltage pulse about 40kV at the process chamber two ends, the positive pole of high-voltage pulse is sent by the emitter of last IGBT in 64 series IGBTs.
The control signal of 64 IGBT series circuits is produced by the IGBT switching circuit, the IGBT switching circuit is controlled by dsp system, the dsp system output frequency is f, duty ratio is the pwm signal of d, and the break-make by IGBTQ1 in the PWM amplifying circuit control IGBT switching circuit, it is f that the emitter of IGBTQ1 correspondingly produces frequency, duty ratio is the pulse signal of d, this signal is as the input signal of 64 M57962L series circuits, control turning on and off of 64 series IGBT Q1 ~ Q64 simultaneously, the emitter generation size by the 64th IGBT is 40kV at last, frequency is f, duty ratio is the unipolarity high-voltage pulse of d.
The IGBT protective circuit comprises the level translator that 9 models are 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, be made of resistance R 273 and voltage-stabiliser tube VS261; The fault-signal of each IGBT is the 3 pin output of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, the output signal of 1 pin of door chip U132 ~ U139 respectively as or the input signal of door chip U140, or the output signal of 1 pin of door chip U140 links to each other with 2 pin of optocoupler U141 through resistance R 274, and the output signal of 6 pin of optocoupler U141 links to each other with the fault detect pin of dsp system; The level translator effect that is made of resistance R 273 and voltage-stabiliser tube VS261 is that the 5V power supply is converted to the 3.3V power supply, giving optocoupler FOD260L power supply, during the 2 pin input high levels of optocoupler FOD260L, 6 pin output low levels, during the 2 pin input low levels of optocoupler FOD260L, 6 pin output high level; When the IGBT operate as normal, corresponding optocoupler TLP521-1 does not work, 3 pin output low level signals, and when over-voltage and over-current appearred in IGBT, corresponding optocoupler TLP521-1 started working, and 3 pin become high level signal; Therefore as 64 IGBT all during operate as normal, the low signal of telecommunication of 3 pin output of optocoupler TLP251-1 is flat, and 2 pin of input optocoupler FOD260 are low level signal, its 6 pin output high level signal, the fault detect pin of dsp system detects high level signal, continues to send pwm signal; When among 64 IGBT fault being arranged; 3 pin of corresponding optocoupler TLP251-1 become high level signal; 2 pin of input optocoupler FOD260L become high level signal; its 6 pin output low level signal; the fault detect pin of dsp system detects low level signal; interrupt sending of pwm signal immediately, IGBT no longer works, thereby effectively protects whole power-supply system.
Claims (6)
1. the solid switch formula high-voltage pulse power source based on the IGBT series connection is characterized in that, comprises main circuit and control unit; Wherein:
1) main circuit: comprise 50kV high-voltage DC power supply, storage capacitor, 64 IGBT series circuits, 64 IGBT buffer circuits and process chamber; The 50kV high-voltage DC power supply is in parallel with storage capacitor, and its positive pole links to each other with an end of 64 IGBT series circuits, and the other end of 64 IGBT series circuits links to each other with an end of process chamber, and the other end of process chamber links to each other with the negative pole of 50kV high-voltage DC power supply; 64 IGBT series circuits link to each other with 64 IGBT buffer circuits;
2) control unit: comprise full bridge rectifier, filter circuit, 65 inverse-excitation converting circuits, dsp system, PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits and IGBT protective circuit; The 220V alternating current links to each other with full bridge rectifier, filter circuit successively, and filter circuit links to each other with IGBT switching circuit, 65 inverse-excitation converting circuits respectively; The pwm signal that dsp system sends links to each other with PWM amplifying circuit, IGBT switching circuit, 64 M57962L series circuits, 64 IGBT series circuits successively; 64 M57962L series circuits link to each other with dsp system through the IGBT protective circuit; 65 inverse-excitation converting circuits link to each other with 64 M57962L series circuits with the PWM amplifying circuit respectively.
2. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1, it is characterized in that: the IGBTQ2 ~ Q65 model in 64 IGBT series circuits in the described main circuit is IGW60T120, the collector electrode of first IGBT links to each other with the positive pole of 50kV high-voltage DC power supply, the emitter of first IGBT links to each other with the collector electrode of second IGBT, the emitter of previous IGBT links to each other with the collector electrode of a back IGBT, the emitter of the 64th IGBT links to each other with process chamber, and process chamber is equipped with the food liquid for the treatment of sterilization; Each IGBT device is provided with the RCD buffer circuit, links to each other with the collector and emitter of corresponding IGBT respectively.
3. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1, it is characterized in that: the full bridge rectifier in the described control unit is made up of four rectifier diode D1～D4, receives filter circuit again; Filter circuit is made up of electrochemical capacitor C5 and the C6 of two parallel connections; The positive pole of electrochemical capacitor C5 and C6 is that the collector electrode of the IGBTQ1 of IGW60T120 links to each other through resistance R 4 and model; The PWM amplifying circuit is that the positive-negative-positive triode S2 that the optocoupler U1 of TLP250, NPN type triode S1 that model is 2SD718 and model are 2SB668 forms by model; The pwm signal of dsp system output links to each other with 2 pin of optocoupler U1 through resistance R 1,6 pin of optocoupler U1 link to each other through the base stage of resistance R 2 with triode S1, S2, the collector electrode of triode S1 links to each other with 8 pin of optocoupler, and link to each other with+15V power supply, the collector electrode of triode S2 links to each other with 5 pin of optocoupler U1, and link to each other with-15V power supply by voltage-stabiliser tube VS3, the emitter of triode S1 links to each other with the emitter of triode S2, and link to each other with the grid of IGBTQ1 through resistance R 3, also be connected the amplitude limiter of being formed by voltage-stabiliser tube VS1, VS2 between the grid of IGBTQ1 and emitter.
4. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1 is characterized in that: the IGBT that 64 M57962L series circuits in the described control unit are M57962L by 64 models drives chip U2 ~ U65 and peripheral circuit is formed; The signal of IGBTQ1 emitter output is as the input signal of 64 M57962L series circuits, link to each other with 14 pin that drive chip U2,13 pin that drive chip U2 link to each other with 14 pin that drive chip U3,13 pin of previous driving chip link to each other with back 14 pin that drive chip, and 13 pin that drive chip U65 link to each other with the negative pole of electrochemical capacitor; Each 4 pin that drive chip links to each other with+15V power supply, and be that 1 pin of the corresponding optocoupler of TLP521-1 links to each other by current-limiting resistance and model, 2 pin of optocoupler link to each other with 8 pin that drive chip, and 6 pin of driving chip link to each other with-15V power supply by voltage-stabiliser tube; Each drives chip M57962L three outputs, first output is 1 pin of M57962L, link to each other with the collector electrode of corresponding IGBT with diode by voltage-stabiliser tube, second output is 5 pin of M57962L, link to each other with the grid of corresponding IGBT by resistance, the 3rd output be M57962L+15V ,-the holding of 15V power supply commonly, link to each other with the emitter of corresponding IGBT; Be connected the amplitude limiter of being formed by two voltage-stabiliser tubes between the grid of each IGBT and emitter.
5. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1, it is characterized in that: 65 inverse-excitation converting circuits in the described control unit have identical circuit structure, comprise that high frequency transformer, model are the switch mosfet pipe of IRF840, control chip that model is UC3844, are the optocoupler of PC817 and are the feedback control circuit that the adjustable accurate shunt regulator of TL431 is formed by model by model; 65 inverse-excitation converting circuits are exported the direct voltage of 65+15V and 65-15V respectively, respectively as optocoupler TLP250 and 64 power supplies that drive chip M57962L.
6. a kind of solid switch formula high-voltage pulse power source based on IGBT series connection according to claim 1 is characterized in that: the IGBT protective circuit in the described control unit comprises the level translator that 9 models are 74HC4078's or door chip U132 ~ U140, model are the optocoupler U141 of FOD260L, be made of resistance R 273 and voltage-stabiliser tube VS261; The fault-signal of each IGBT is the 3 pin output of the corresponding optocoupler of TLP521-1 by model, the fault-signal of 64 series IGBTs is respectively Out1 ~ Out64, respectively as or the input signal of door chip U132 ~ U139, the output signal of door chip U132 ~ U139 respectively as or the input signal of door chip U140, or the output signal of door chip U140 links to each other with 2 pin of optocoupler U141 through resistance R 274, and the output signal of 6 pin of optocoupler U141 links to each other with dsp system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310170964.6A CN103281002B (en) | 2013-05-10 | 2013-05-10 | Based on the solid switch formula high-voltage pulse power source of IGBT series connection |
Applications Claiming Priority (1)
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|---|---|---|---|
| CN201310170964.6A CN103281002B (en) | 2013-05-10 | 2013-05-10 | Based on the solid switch formula high-voltage pulse power source of IGBT series connection |
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| CN103281002A true CN103281002A (en) | 2013-09-04 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105939159A (en) * | 2015-12-27 | 2016-09-14 | 天津市品通电力科技有限公司 | PWM analog DA output circuit for excitation speed-adjusting system |
| CN106130332A (en) * | 2016-07-19 | 2016-11-16 | 合肥联信电源有限公司 | A kind of emergency power supply high-power IGBT current foldback circuit |
| CN107565845A (en) * | 2017-08-30 | 2018-01-09 | 西安交通大学 | The load matching device and method of a kind of high-voltage pulse power source |
| CN108462482A (en) * | 2018-02-10 | 2018-08-28 | 西安交通大学 | A kind of device and method generating bipolarity high-voltage pulse |
| CN109039140A (en) * | 2018-10-22 | 2018-12-18 | 中国工程物理研究院应用电子学研究所 | A kind of compact high-voltage switch gear component |
| CN109921772A (en) * | 2019-04-19 | 2019-06-21 | 骆驼集团武汉光谷研发中心有限公司 | A kind of input signal holding circuit |
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| CN103036469A (en) * | 2012-12-07 | 2013-04-10 | 浙江大学 | High-voltage pulse power supply |
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| CN102611413A (en) * | 2012-03-16 | 2012-07-25 | 浙江大学 | Insulated gate bipolar translator (IGBT) series connection type high-voltage pulse generator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105939159A (en) * | 2015-12-27 | 2016-09-14 | 天津市品通电力科技有限公司 | PWM analog DA output circuit for excitation speed-adjusting system |
| CN106130332A (en) * | 2016-07-19 | 2016-11-16 | 合肥联信电源有限公司 | A kind of emergency power supply high-power IGBT current foldback circuit |
| CN107565845A (en) * | 2017-08-30 | 2018-01-09 | 西安交通大学 | The load matching device and method of a kind of high-voltage pulse power source |
| CN108462482A (en) * | 2018-02-10 | 2018-08-28 | 西安交通大学 | A kind of device and method generating bipolarity high-voltage pulse |
| CN108462482B (en) * | 2018-02-10 | 2020-10-27 | 西安交通大学 | Device and method for generating bipolar high-voltage pulse |
| CN109039140A (en) * | 2018-10-22 | 2018-12-18 | 中国工程物理研究院应用电子学研究所 | A kind of compact high-voltage switch gear component |
| CN109921772A (en) * | 2019-04-19 | 2019-06-21 | 骆驼集团武汉光谷研发中心有限公司 | A kind of input signal holding circuit |
| CN109921772B (en) * | 2019-04-19 | 2023-12-15 | 骆驼集团武汉光谷研发中心有限公司 | Input signal holding circuit |
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