CN102035378A - All solid state high-voltage power supply with positive and negative pulse outputs - Google Patents
All solid state high-voltage power supply with positive and negative pulse outputs Download PDFInfo
- Publication number
- CN102035378A CN102035378A CN2009101966780A CN200910196678A CN102035378A CN 102035378 A CN102035378 A CN 102035378A CN 2009101966780 A CN2009101966780 A CN 2009101966780A CN 200910196678 A CN200910196678 A CN 200910196678A CN 102035378 A CN102035378 A CN 102035378A
- Authority
- CN
- China
- Prior art keywords
- discharge cell
- power supply
- charhing unit
- solid state
- high voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The invention belongs to the technical field of power supplies and relates to an all solid state high-voltage power supply with positive and negative pulse outputs. The power supply comprises a series of discharging units which are connected in series and charging units which are connected with the discharging units, wherein a first unit and a last unit in the series of discharging units are connected to a load; and each discharging unit comprises a plurality of semiconductor switches and energy storage capacitors which are connected with the switches. Under the condition that a high-voltage pulse transformer and a high-voltage direct current power supply are not used, a direct current or alternating current low voltage is converted into positive and negative bidirectional high-voltage pulses by the switch-on and switch-off characteristics of the semiconductor switch and the width, frequency and amplitude of the output pulse have large adjusting ranges. The all solid state high-voltage power supply has the characteristics of small size, long service life and low failure rate. On specific application occasions, the power supply can replace a boosting transformer.
Description
Technical field
The invention belongs to power technique fields, relate to the system and method that is used to produce positive negative pulse stuffing.Be specifically related to a kind of all solid state high voltage power supply with positive negative pulse stuffing output.
Background technology
At present, the high voltage source with positive negative pulse stuffing output in the application of aspects such as food sterilization and waste water and gas processing more and more widely, the requirement of every performance index of paired pulses power supply is also more and more higher.Basic developing direction is higher repetition rate, faster rising and falling edges, bigger power output and lower cost.Existing technical scheme is divided into following three kinds: first kind of scheme is to constitute inverter bridge with semiconductor switch device (as MOSFET or IGBT), promotes through the output voltage of step-up transformer with inverter bridge then, thereby forms positive and negative bidirectional high-pressure pulse.This scenario-frame is simple, but because the influence of transformer leakage inductance and distributed capacitance makes the output rising edge of a pulse slow down, waveform distorts, and has top concussion and reverse voltage.And pulse duration is subjected to the restriction of magnetic core physical dimension, and adjustable extent is less; Repetition rate is subjected to core loss heating restriction, is not easy to improve.Second kind of scheme is to be composed in series the high-voltage switch gear module with a plurality of semiconductor switchs, forms inverter bridge by these modules again, changes high direct voltage into bidirectional pulse.Therefore this scheme can obtain good voltage waveform owing to do not adopt transformer, and pulse frequency and width can be adjusted in a big way.The difficult point of this technology is how to guarantee the synchronous turn-on and turn-off of the semiconductor switch of connecting, otherwise switching device just faces the danger of chain puncture.Adopt the gate drive circuit of particular design and the semiconductor device that selection has identical characteristics, can realize the safe operation of switch module, but this method does not have ease for operation and general applicability.The high-voltage DC power supply cost is also higher in addition.The third scheme is to adopt gas switch, as rotary gap, to the discharge of high voltage direct current source, thereby produces bidirectional pulse.Because gas switch has the speed of opening faster, so rising edge of a pulse can be very fast, reaches nanosecond.Yet compare with semiconductor switch, there is the problem of electrode erosion in gas switch, and useful life is not long, safeguards also complicated.Gas switch belongs to half control type device in addition, can't initiatively turn-off; Repetition rate is not high, generally is no more than 1KHz.These shortcomings have greatly limited the use of gas switch.
Summary of the invention
The object of the present invention is to provide that a kind of volume is little, the life-span is long, failure rate is low, pulse duration and amplitude have bigger adjustable extent, can export all solid state high voltage power supply of positive negative pulse stuffing.The present invention can substitute step-up transformer in certain applications.
The present invention can be under the situation of not using high voltage pulse transformer and high-voltage DC power supply, the characteristic of utilizing semiconductor switch to turn on and off, change direct current or AC low-tension into positive and negative two-way high-voltage pulse, and width, frequency and the amplitude of output pulse all has bigger adjustable extent.
Particularly, the invention provides a kind of all solid state high voltage power supply, it is characterized in that it comprises a series of discharge cells that are connected in series with positive negative pulse stuffing output, and the charhing unit that links to each other with each discharge cell.In a series of discharge cells first is used to be connected to load with last unit.Each discharge cell comprises several semiconductor switchs and the storage capacitor that links to each other with switch.The type of these switches both can be a half control N-type semiconductor N switch, as thyristor (SCR), also can be the full-control type semiconductor switch, as MOSFET or IGBT.The structure of each discharge cell has two kinds of selections, and the one, the full-bridge circuit structure comprises four semiconductor switchs and a storage capacitor, comprises corresponding switch drive simultaneously; The 2nd, the half-bridge circuit structure comprises two semiconductor switchs and two storage capacitors, comprises corresponding switch drive simultaneously.Have in the high voltage source of feature noted earlier at every suit, the structure of each discharge cell all is consistent.Charhing unit both can be the combination (this method is called non-isolation charging) of diode and semiconductor switch, it also can be the combination (this method is called and isolates charging) of transformer and rectifier bridge, but have in the high voltage source of feature noted earlier at every suit, the structure of each charhing unit all is consistent.
Among the present invention, adopt diode and semiconductor switch as charhing unit at a cover, just adopt in all solid state high voltage power supply with positive negative pulse stuffing output of non-isolation charging, when power supply is in charged state, the semiconductor switch conducting in each charhing unit.If the discharge cell in this cover high voltage source adopts the full-bridge circuit structure, in order to form complete charge circuit, a semiconductor switch in each discharge cell needs conducting so, and other semiconductor switchs keep off state; If the discharge cell in this cover high voltage source adopts the half-bridge circuit structure, charhing unit has comprised the semiconductor switch that can make electric current return dc charging power supply so, so the semiconductor switch in the discharge cell does not need conducting.When all solid state high voltage power supply was in discharge condition, the semiconductor switch in each charhing unit turn-offed; For discharge cell is the high voltage source of full-bridge circuit structure, and the semiconductor switch of original conducting also turn-offs in each discharge cell.If discharge cell is the full-bridge circuit structure, so in order to produce the pulse of some directions (plus or minus), a pair of diagonally opposing corner semiconductor switch conducting that links to each other with storage capacitor in each discharge cell, another keeps off state to semiconductor switch; In order to produce reciprocal pulse, that a pair of semiconductor switch of each discharge cell Central Plains elder generation conducting turn-offs, original that a pair of semiconductor switch conducting of turn-offing.The semiconductor switch of each turn-on and turn-off is compared with other unit in each discharge cell, and residing relative position is all the same in unit separately.If discharge cell is the half-bridge circuit structure, so in order to produce the pulse of some directions (plus or minus), a semiconductor switch conducting in each discharge cell, constitute the part of discharge loop with that storage capacitor that links to each other with this semiconductor switch, another semiconductor switch in this moment this discharge cell keeps off state; In order to produce reciprocal pulse, that semiconductor switch of each discharge cell Central Plains elder generation conducting turn-offs, original that semiconductor switch conducting of turn-offing, the switch of conducting and that storage capacitor of being attached thereto have constituted the part of discharge loop together.The semiconductor switch of each turn-on and turn-off is compared with other unit in each discharge cell, and residing relative position is all the same in unit separately.
Among the present invention, adopt transformer and rectifier bridge as charhing unit at a cover, just adopt in all solid state high voltage power supply with positive negative pulse stuffing output of isolating charging, each discharge cell is corresponding to a charhing unit.Transformer in all charhing units is shared same former limit winding, and this former limit winding can be a circle or multiturn high-voltage conducting wires, and the lead two ends are connected to the output of high-frequency ac charge power supply.Each transformer all adopts toroidal core, and the secondary winding of magnetic core is the multiturn lead, and the lead two ends are connected to the input of the rectifier bridge that is constituted by a diode.The output of rectifier bridge is connected to the both positive and negative polarity of storage capacitor in the corresponding discharge cell.When all solid state high voltage power supply was in charged state, the semiconductor switch in each discharge cell all kept off state; When all solid state high voltage power supply is in discharge condition, as required, can select whether to continue charging, whether this realizes by the work of control high-frequency ac charge power supply.Adopt all solid state high voltage power supply of isolating charging, its discharge cell has two kinds of structures to select equally, i.e. full-bridge circuit structure and half-bridge circuit structure.Export the pulse of certain direction, consistent to the control strategy of the semiconductor switch in the discharge cell with the control strategy of semiconductor switch in all solid state high voltage power supply that adopts non-isolation charging.
Among the present invention, no matter be to adopt the full-bridge circuit structure or all solid state high voltage power supply of half-bridge circuit structure, can adjust potential pulse by the operating state of controlling each discharge cell for discharge cell.That is to say, one or more discharge cells are not worked, do not influence the normal operation of other discharge cells simultaneously, change the amplitude of output pulse with this.Simultaneously, the inefficacy of partial discharge unit can not stop all solid state high voltage power supply to produce pulse.
Owing to adopted technique scheme, the present invention compared with prior art has following advantage:
Discharge loop does not adopt high voltage pulse transformer to boost, and width and the frequency of therefore exporting pulse have bigger adjustable extent;
Owing to saved high voltage pulse transformer, therefore system can keep relatively little volume and lower power loss under the more powerful situation of output.The influence that reduces to have reduced parasitic capacitance of volume, the more voltage cell of therefore can connecting reaches higher output voltage grade;
Semiconductor switch in the discharge cell can not face the danger of over-voltage breakdown in the turn-on and turn-off process.The speed of single switch turn-on and turn-off speed or whether conducting can not exert an influence to the normal operation of other switches;
Charge power supply only needs low-voltage dc power supply or high-frequency low-voltage AC power, compares with the high-voltage DC power supply that uses in the traditional scheme and greatly reduces cost;
Unidirectional pulse can be produced, bidirectional pulse can be produced again.
For the ease of understanding, below will the present invention be described in detail by concrete drawings and Examples.It needs to be noted, specific embodiments and the drawings only are in order to illustrate, obviously those of ordinary skill in the art can illustrate according to this paper, within the scope of the invention the present invention is made various corrections and change, and these corrections and change are also included in the scope of the present utility model.
Description of drawings
Fig. 1 is for adopting non-isolation charging, and discharge cell is all solid state high voltage power supply execution mode block diagram with positive negative pulse stuffing output of full-bridge circuit structure,
Wherein: the 100-dc charging power supply; 102-charging current path; 104,106 and the 108-charhing unit; 110,112 and the 114-diode; 116,118 and the 120-semiconductor switch; 122,124 and the 126-switch drive; 128,130 and the 132-discharge cell; 134,136,138,140,142,144,146,148,150,152,154 and the 156-semiconductor switch; 158,160,162,164,166,168,170,172,174,176,178 and the 180-switch drive; 182,184 and the 186-storage capacitor; The 188-load.
Fig. 2 is for adopting non-isolation charging, and discharge cell is all solid state high voltage power supply execution mode block diagram with positive negative pulse stuffing output of half-bridge circuit structure,
Wherein: the 200-dc charging power supply; 202-charging current path; 204,206 and the 208-charhing unit; 210,212,214,216,218 and the 220-diode; 222,224,226,228,230 and the 232-semiconductor switch; 234,236,238,240,242 and the 244-switch drive; 246,248 and the 250-discharge cell; 252,254,256,258,260 and the 262-semiconductor switch; 264,266,268,270,272 and the 274-switch drive; 276,278,280,282,284 and the 286-storage capacitor; The 288-load.
Fig. 3 is for adopt isolating charging, and discharge cell is all solid state high voltage power supply execution mode block diagram with positive negative pulse stuffing output of full-bridge circuit structure,
Wherein: the 300-ac charging power supply; The former limit of 302-charging transformer winding; 304,306 and the 308-charhing unit; 310,312 and the 314-charging transformer; 316,318 and the 320-rectifier bridge; 322,324 and the 326-discharge cell; 328,330,332,334,336,338,340,342,344,346,348 and the 350-semiconductor switch; 352,354,356,358,360,362,364,366,368,370,372 and the 374-switch drive; 376,378 and the 380-storage capacitor; The 382-load.
Fig. 4 is for adopt isolating charging, and discharge cell is all solid state high voltage power supply execution mode block diagram with positive negative pulse stuffing output of half-bridge circuit structure,
Wherein: the 400-ac charging power supply; The former limit of 402-charging transformer winding; 404,406 and the 408-charhing unit; 410,412 and the 414-charging transformer; 416,418 and the 420-rectifier bridge; 422,424 and the 426-discharge cell; 428,430,432,434,436 and the 438-semiconductor switch; 440,442,444,446,448 and the 450-switch drive; 452,454,456,458,460 and the 462-storage capacitor; The 464-load.
Embodiment
Comprise a series of discharge cells that are connected in series in the embodiments of the present invention, and with the corresponding charhing unit of each discharge cell.Discharge cell has two kinds of structures, is respectively half-bridge circuit structure and full-bridge circuit structure.Charhing unit also has two kinds of structures, is respectively non-isolation structure and isolation structure.Therefore, different according to charhing unit and discharge cell version, the present invention can be divided into four kinds of execution modes.
Embodiment 1
Fig. 1 illustrates a kind of execution mode that can produce and transmit all solid state high voltage power supply of positive negative pulse stuffing to load.Charhing unit in this execution mode adopts non-isolation structure, and discharge cell adopts the full-bridge circuit structure.This execution mode comprises three charhing units and three discharge cells, but those of ordinary skill in the art should be realized that, can comprise more or less unit.
Each charhing unit in this execution mode comprises a diode, semiconductor switch and switch drive.For example for charhing unit 104, it comprises diode 110, semiconductor switch 116 and switch drive 122.Each discharge cell comprises a storage capacitor, four semiconductor switchs and corresponding switch drive.For example for discharge cell 128, it comprises storage capacitor 182, semiconductor switch 134,136,138 and 140, and switch drive 158,160,162 and 164.
When all solid state high voltage power supply is in charged state, be to storage capacitor in discharge cell 128,130 and 132 182,184 and 186 chargings.By the control signal of switch drive 122,124 and 126, all semiconductor switchs 116,118 and 120 in the charhing unit 104,106 and 108 are in conducting state; By the control signal of switch drive 160,168 and 176, the semiconductor switch 136,144 and 152 in three discharge cells is in conducting state equally; By the control signal of switch drive 158,162,164,166,170,172,174,178 and 180, other semiconductor switchs 134,138,140,142,146,148,150,154 and 156 in three discharge cells are in off state.Therefore, 100 pairs of storage capacitors of dc charging power supply 182,184 and 186 charged in parallels.Path 102 expression is from the current path that storage capacitor 182 is charged of dc charging power supply 100.This current path has passed through diode 110, the inverse parallel diode of semiconductor switch 116 and semiconductor switch 140.Similarly, the current path to storage capacitor 184 chargings has passed through diode 110,112, semiconductor switch 116,118 and 136, and the inverse parallel diode of semiconductor switch 148 and 140; Current path to storage capacitor 186 chargings has passed through diode 110,112 and 114, semiconductor switch 116,118,120,144 and 136, and the inverse parallel diode of semiconductor switch 156,148 and 140.
When all solid state high voltage power supply is in discharge condition, if output direct impulse voltage (with respect to earth potential) by applying corresponding switch drive, makes all semiconductor switchs 116,118 and 120 in three charhing units be in off state; A pair of diagonally opposing corner semiconductor switch in three discharge cells in every unit, just 136,138,144,146 and 152,154 are in off state, make in three discharge cells another in every unit to the diagonally opposing corner semiconductor switch simultaneously, just 134,140,142,148 and 150,156 are in conducting state.Therefore 182,184 and 186 pairs of load 188 discharged in series of storage capacitor are exported direct impulse voltage.If output negative-going pulse voltage (with respect to earth potential), by applying corresponding switch drive, make all semiconductor switchs 116,118 and 120 in three charhing units be in off state, a pair of diagonally opposing corner semiconductor switch in three discharge cells in every unit, just 134,140,142,148 and 150,156 are in off state, make in three discharge cells another in every unit to the diagonally opposing corner semiconductor switch simultaneously, just 136,138,144,146 and 152,154 are in conducting state.Therefore 182,184 and 186 pairs of load 188 discharged in series of storage capacitor are exported negative-going pulse voltage.
Embodiment 2
Fig. 2 illustrates the another kind of execution mode that can produce and transmit all solid state high voltage power supply of positive negative pulse stuffing to load.Charhing unit in this execution mode adopts non-isolation structure, and discharge cell adopts the half-bridge circuit structure.This execution mode comprises three charhing units and three discharge cells, but those of ordinary skill in the art should be realized that, can comprise more or less unit.
Each charhing unit in this execution mode comprises two diodes, two semiconductor switchs and corresponding switch drive.For example for charhing unit 204, it comprises diode 210,220, semiconductor switch 222,232 and switch drive 234,244.Each discharge cell comprises two storage capacitors, two semiconductor switchs and corresponding switch drive.For example for discharge cell 246, it comprises storage capacitor 276,278, semiconductor switch 252,254, and switch drive 264,266.
When all solid state high voltage power supply is in charged state, be to storage capacitor in discharge cell 246,248 and 250 276,278,280,282,284 and 286 chargings.By the control signal of switch drive 234,236,238,240,242 and 244, all semiconductor switchs 222,224,226,228,230 and 232 in the charhing unit 204,206 and 208 are in conducting state; By the control signal of switch drive 264,266,268,270,272 and 274, all semiconductor switchs 252,254,256,258,260 and 262 in three discharge cells are in off state.Therefore, two storage capacitors in each discharge cell are together in series earlier, then by dc charging power supply 200 to these three groups of storage capacitors, just 276,278,280,282 and 284,286 charged in parallels.Path 202 expression is from the current path that storage capacitor 276 and 278 is charged of dc charging power supply 200.This current path has passed through diode 210 and 220, semiconductor switch 222 and 232.Similarly, the current path to storage capacitor 280 and 282 chargings has passed through diode 210,212,218 and 220, semiconductor switch 222,224,230 and 232; Current path to storage capacitor 284 and 286 chargings has passed through diode 210,212,214,216,218 and 220, semiconductor switch 222,224,226,228,230 and 232.
When all solid state high voltage power supply is in discharge condition, if output direct impulse voltage (with respect to earth potential), by applying corresponding switch drive, make all semiconductor switchs 222,224,226,228,230 and 232 in three charhing units be in off state; Semiconductor switch 252,256 and 260 in three discharge cells is in off state, makes three semiconductor switchs 254,258 and 262 in the discharge cell be in conducting state simultaneously.Therefore 278,282 and 286 pairs of load 288 discharged in series of storage capacitor are exported direct impulse voltage.If output negative-going pulse voltage (with respect to earth potential) by applying corresponding switch drive, makes all semiconductor switchs 222,224,226,228,230 and 232 in three charhing units be in off state; Semiconductor switch 254,258 and 262 in three discharge cells is in off state, makes three semiconductor switchs 252,256 and 260 in the discharge cell be in conducting state simultaneously.Therefore 276,280 and 284 pairs of load 288 discharged in series of storage capacitor are exported negative-going pulse voltage.
Embodiment 3
Fig. 3 illustrates the another kind of execution mode that can produce and transmit all solid state high voltage power supply of positive negative pulse stuffing to load.Charhing unit in this execution mode adopts isolation structure, and discharge cell adopts the full-bridge circuit structure.This execution mode comprises three charhing units and three discharge cells, but those of ordinary skill in the art should be realized that, can comprise more or less unit.
Each charhing unit in this execution mode comprises charging transformer and a rectifier bridge.For example for charhing unit 304, it comprises charging transformer 310 and rectifier bridge 316.All charging transformers comprise that 310,312 and 314 share same former limit winding 302.Each discharge cell comprises a storage capacitor, four semiconductor switchs and corresponding switch drive.For example for discharge cell 322, it comprises storage capacitor 376, semiconductor switch 328,330,332 and 334, and switch drive 352,354,356 and 358.
When all solid state high voltage power supply was in charged state, AC power 300 was isolated charging to the storage capacitor in three discharge cells 322,324 and 326 376,378 and 380 respectively by three charhing units 304,306 and 308.By the control signal of switch drive 352,354,356,358,360,362,364,366,368,370,372 and 374, all semiconductor switchs 328,330,332,334,336,338,340,342,344,346,348 and 350 in three discharge cells are in off state.
When all solid state high voltage power supply is in discharge condition, can select whether to continue to the storage capacitor charging, this operating state by the control alternating current power supply charging realizes.No matter whether continue charging, can be not influential to the operate as normal of high voltage source, influenced be pulsed discharge the time be transferred to the energy of load.If output direct impulse voltage (with respect to earth potential), by applying corresponding switch drive, make a pair of diagonally opposing corner semiconductor switch in every unit in three discharge cells, just 330,332,338,340 and 346,348 are in off state, make simultaneously that another in every unit is to the diagonally opposing corner semiconductor switch in three discharge cells, just 328,334,336,342 and 344,350 are in conducting state.Therefore 376,378 and 380 pairs of load 382 discharged in series of storage capacitor are exported direct impulse voltage.If output negative-going pulse voltage (with respect to earth potential), by applying corresponding switch drive, make in three discharge cells a pair of diagonally opposing corner semiconductor switch in every unit, just 328,334,336,342 and 344,350 are in off state, make simultaneously that another in every unit is to the diagonally opposing corner semiconductor switch in three discharge cells, just 330,332,338,340 and 346,348 are in conducting state.Therefore 376,378 and 380 pairs of load 382 discharged in series of storage capacitor are exported negative-going pulse voltage.
Fig. 4 illustrates the another kind of execution mode that can produce and transmit all solid state high voltage power supply of positive negative pulse stuffing to load.Charhing unit in this execution mode adopts isolation structure, and discharge cell adopts the half-bridge circuit structure.This execution mode comprises three charhing units and three discharge cells, but those of ordinary skill in the art should be realized that, can comprise more or less unit.
Each charhing unit in this execution mode comprises charging transformer and a rectifier bridge.For example for charhing unit 404, it comprises charging transformer 410 and rectifier bridge 416.All charging transformers comprise that 410,412 and 414 share same former limit winding 402.Each discharge cell comprises two storage capacitors, two semiconductor switchs and corresponding switch drive.For example for discharge cell 422, it comprises storage capacitor 452,454, semiconductor switch 428,430, and switch drive 440,442.
When all solid state high voltage power supply is in charged state, ac charging power supply 400 by three charhing units 404,406 and 408 respectively to the storage capacitor of three pairs of series connection in three discharge cells 422,424 and 426, just 452,454,456,458 and 460,462 isolate charging.By the control signal of switch drive 440,442,444,446,448 and 450, all semiconductor switchs 428,430,432,434,436 and 438 in three discharge cells are in off state.
When all solid state high voltage power supply is in discharge condition, can select whether to continue to the storage capacitor charging, this operating state by the control alternating current power supply charging realizes.No matter whether continue charging, can be not influential to the operate as normal of high voltage source, influenced be pulsed discharge the time be transferred to the energy of load.If output direct impulse voltage (with respect to earth potential), by applying corresponding switch drive, make three semiconductor switchs 428,432 and 436 in the discharge cell be in off state, make three semiconductor switchs 430,434 and 438 in the discharge cell be in conducting state simultaneously.Therefore 454,458 and 462 pairs of load 464 discharged in series of storage capacitor are exported direct impulse voltage.If output negative-going pulse voltage (with respect to earth potential), by applying corresponding switch drive, make three semiconductor switchs 430,434 and 438 in the discharge cell be in off state, make three semiconductor switchs 428,432 and 436 in the discharge cell be in conducting state simultaneously.Therefore 452,456 and 460 pairs of load 464 discharged in series of storage capacitor are exported negative-going pulse voltage.
In above four kinds of execution modes, the semiconductor switch in the discharge cell both can be a half control N-type semiconductor N switch, as thyristor (SCR), also can be the full-control type semiconductor switch, as MOSFET or IGBT.If the inside of the semiconductor switch that uses does not have the integrated inverse parallel diode IGBT of thyristor and part model (for example for), need so the external inverse parallel diode of these switches.If the inside of the semiconductor switch that uses is integrated inverse parallel diode (for example for most MOSFET), so just do not need external diode.
In above four kinds of execution modes, if the semiconductor switch in the discharge cell has used this class half control type switch of thyristor, switch is disconnected,, also should guarantee to flow through the keep electric current of the electric current of switch less than switch itself except applying corresponding switch drive.For example for first kind of execution mode shown in Figure 1, when the output direct impulse, by applying corresponding switch drive, make three semiconductor switchs 136,138,144,146,152 and 154 in the discharge cell be in off state, should guarantee to flow through the keep electric current of the electric current of these switches this moment less than switch itself.If the semiconductor switch in the discharge cell has used IGBT or this class full-controlled switch of MOSFET, so no matter the electric current that flow through before switch disconnects is either large or small, only need apply corresponding switch drive, and switch can turn-off.
Claims (10)
1. all solid state high voltage power supply with positive negative pulse stuffing output is characterized in that it comprises a series of discharge cells that are connected in series, and the charhing unit that links to each other with each discharge cell; In described a series of discharge cell first is used to be connected to load with last unit; Each discharge cell comprises several semiconductor switchs and the storage capacitor that links to each other with switch.
2. by the described all solid state high voltage power supply of claim 1, it is characterized in that the type of described switch is a half control N-type semiconductor N switch, or the full-control type semiconductor switch with positive negative pulse stuffing output.
3. by the described all solid state high voltage power supply of claim 1, it is characterized in that the structure of described each discharge cell is the full-bridge circuit structure, or the half-bridge circuit structure with positive negative pulse stuffing output.
4. by claim 2 or 3 described all solid state high voltage power supplys, it is characterized in that in every suit high voltage source, the structure of each discharge cell all is consistent with positive negative pulse stuffing output; Charhing unit is the combination of diode and semiconductor switch or the combination of transformer and rectifier bridge, and in the described high voltage source of every suit, the structure of each charhing unit all is consistent.
5. by the described all solid state high voltage power supply of claim 3, it is characterized in that described full-bridge circuit structure discharge cell comprises four semiconductor switchs and a storage capacitor, comprises corresponding switch drive simultaneously with positive negative pulse stuffing output; Described half-bridge circuit structure discharge cell comprises two semiconductor switchs and two storage capacitors, comprises corresponding switch drive simultaneously.
6. by the described all solid state high voltage power supply of claim 2, it is characterized in that described is that half control N-type semiconductor N switch is a thyristor with positive negative pulse stuffing output; Described full-control type semiconductor switch is MOSFET or IGBT.
7. by the described all solid state high voltage power supply with positive negative pulse stuffing output of claim 1, it is characterized in that described charhing unit adopts non-isolation structure, discharge cell adopts the full-bridge circuit structure; Described charhing unit comprises three or more or still less charhing unit and three or more or discharge cell still less, each charhing unit wherein comprises a diode, semiconductor switch and switch drive, each discharge cell comprises a storage capacitor, four semiconductor switchs and corresponding switch drive.
8. by the described all solid state high voltage power supply with positive negative pulse stuffing output of claim 1, it is characterized in that described charhing unit adopts non-isolation structure, discharge cell adopts the half-bridge circuit structure; Described charhing unit three or more or still less charhing unit and three or more or discharge cell still less, each charhing unit wherein comprises two diodes, two semiconductor switchs and corresponding switch drive, each discharge cell comprises two storage capacitors, two semiconductor switchs and corresponding switch drive.
9. by the described all solid state high voltage power supply with positive negative pulse stuffing output of claim 1, it is characterized in that described charhing unit adopts isolation structure, discharge cell adopts the full-bridge circuit structure; Described charhing unit three or more or still less charhing unit and three or more or discharge cell still less, each charhing unit wherein comprises charging transformer and a rectifier bridge, each discharge cell comprises a storage capacitor, four semiconductor switchs and corresponding switch drive.
10. by the described all solid state high voltage power supply of claim 1 with positive negative pulse stuffing output, it is characterized in that, described charhing unit adopts isolation structure, discharge cell adopts the half-bridge circuit structure, described charhing unit three or more or still less charhing unit and three or more or discharge cell still less, each charhing unit wherein comprises charging transformer and a rectifier bridge, and each discharge cell comprises two storage capacitors, two semiconductor switchs and corresponding switch drive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101966780A CN102035378A (en) | 2009-09-28 | 2009-09-28 | All solid state high-voltage power supply with positive and negative pulse outputs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101966780A CN102035378A (en) | 2009-09-28 | 2009-09-28 | All solid state high-voltage power supply with positive and negative pulse outputs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102035378A true CN102035378A (en) | 2011-04-27 |
Family
ID=43887847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101966780A Pending CN102035378A (en) | 2009-09-28 | 2009-09-28 | All solid state high-voltage power supply with positive and negative pulse outputs |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102035378A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103326612A (en) * | 2013-06-18 | 2013-09-25 | 中国科学院电工研究所 | Unipolar microsecond pulse high voltage power supply |
| CN103490661A (en) * | 2013-09-12 | 2014-01-01 | 复旦大学 | All-solid-state high voltage pulse current source with positive and negative pulse output |
| CN103618472A (en) * | 2013-09-12 | 2014-03-05 | 复旦大学 | Full-solid-state high-voltage pulse current source with unipolar pulse output |
| CN104184358A (en) * | 2014-09-12 | 2014-12-03 | 江苏容天机电科技有限公司 | Novel high-power pulse power supply device |
| CN107070246A (en) * | 2017-04-19 | 2017-08-18 | 南京南瑞继保电气有限公司 | A kind of energy supplying system and method |
| CN107482944A (en) * | 2017-08-30 | 2017-12-15 | 中国舰船研究设计中心 | One kind output adjustable all solid state high voltage power supply of pulse multi-parameter |
| CN107565845A (en) * | 2017-08-30 | 2018-01-09 | 西安交通大学 | The load matching device and method of a kind of high-voltage pulse power source |
| CN108173450A (en) * | 2018-02-06 | 2018-06-15 | 中国工程物理研究院流体物理研究所 | A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse forms circuit |
| CN108462482A (en) * | 2018-02-10 | 2018-08-28 | 西安交通大学 | A kind of device and method generating bipolarity high-voltage pulse |
| CN108471255A (en) * | 2018-03-27 | 2018-08-31 | 上海理工大学 | A kind of arbitrary polarity high-voltage square-wave superimposed pulses device |
| CN108599742A (en) * | 2018-04-11 | 2018-09-28 | 西安交通大学 | A kind of the negative high voltage Pulased power supply unit and parametrization adjusting method of Parameter adjustable |
| CN110814146A (en) * | 2019-10-15 | 2020-02-21 | 中国科学院深圳先进技术研究院 | All-solid-state high-voltage pulse generation circuit and device applied to electro-hydraulic forming |
| CN110932667A (en) * | 2019-12-13 | 2020-03-27 | 阳光电源股份有限公司 | Bipolar PID (proportion integration differentiation) repair device and photovoltaic system |
| CN112003357A (en) * | 2020-08-25 | 2020-11-27 | 中车株洲电力机车研究所有限公司 | Circuit control method based on solid-state switch and solid-state switch |
| CN114070035A (en) * | 2021-11-12 | 2022-02-18 | 上海联影医疗科技股份有限公司 | Power supply unit and medical equipment |
| CN115208199A (en) * | 2022-07-21 | 2022-10-18 | 忱芯电子(苏州)有限公司 | High-voltage topological circuit and high-voltage generator using same |
-
2009
- 2009-09-28 CN CN2009101966780A patent/CN102035378A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103326612B (en) * | 2013-06-18 | 2015-09-16 | 中国科学院电工研究所 | A kind of unipolarity microsecond pulse high voltage source |
| CN103326612A (en) * | 2013-06-18 | 2013-09-25 | 中国科学院电工研究所 | Unipolar microsecond pulse high voltage power supply |
| CN103490661A (en) * | 2013-09-12 | 2014-01-01 | 复旦大学 | All-solid-state high voltage pulse current source with positive and negative pulse output |
| CN103618472A (en) * | 2013-09-12 | 2014-03-05 | 复旦大学 | Full-solid-state high-voltage pulse current source with unipolar pulse output |
| CN103618472B (en) * | 2013-09-12 | 2016-01-20 | 复旦大学 | There is all solid state high voltage pulse current source that unipolar pulse exports |
| CN104184358A (en) * | 2014-09-12 | 2014-12-03 | 江苏容天机电科技有限公司 | Novel high-power pulse power supply device |
| CN107070246A (en) * | 2017-04-19 | 2017-08-18 | 南京南瑞继保电气有限公司 | A kind of energy supplying system and method |
| CN107482944A (en) * | 2017-08-30 | 2017-12-15 | 中国舰船研究设计中心 | One kind output adjustable all solid state high voltage power supply of pulse multi-parameter |
| CN107565845A (en) * | 2017-08-30 | 2018-01-09 | 西安交通大学 | The load matching device and method of a kind of high-voltage pulse power source |
| CN108173450B (en) * | 2018-02-06 | 2024-03-12 | 中国工程物理研究院流体物理研究所 | High-power bipolar pulse forming circuit integrating high-voltage short pulse pre-ionization |
| CN108173450A (en) * | 2018-02-06 | 2018-06-15 | 中国工程物理研究院流体物理研究所 | A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse forms circuit |
| CN108462482A (en) * | 2018-02-10 | 2018-08-28 | 西安交通大学 | A kind of device and method generating bipolarity high-voltage pulse |
| CN108462482B (en) * | 2018-02-10 | 2020-10-27 | 西安交通大学 | Device and method for generating bipolar high-voltage pulse |
| CN108471255A (en) * | 2018-03-27 | 2018-08-31 | 上海理工大学 | A kind of arbitrary polarity high-voltage square-wave superimposed pulses device |
| CN108599742A (en) * | 2018-04-11 | 2018-09-28 | 西安交通大学 | A kind of the negative high voltage Pulased power supply unit and parametrization adjusting method of Parameter adjustable |
| CN110814146A (en) * | 2019-10-15 | 2020-02-21 | 中国科学院深圳先进技术研究院 | All-solid-state high-voltage pulse generation circuit and device applied to electro-hydraulic forming |
| CN110814146B (en) * | 2019-10-15 | 2021-10-26 | 中国科学院深圳先进技术研究院 | All-solid-state high-voltage pulse generation circuit and device applied to electro-hydraulic forming |
| CN110932667A (en) * | 2019-12-13 | 2020-03-27 | 阳光电源股份有限公司 | Bipolar PID (proportion integration differentiation) repair device and photovoltaic system |
| CN110932667B (en) * | 2019-12-13 | 2021-12-10 | 阳光电源股份有限公司 | Bipolar PID (proportion integration differentiation) repair device and photovoltaic system |
| CN112003357A (en) * | 2020-08-25 | 2020-11-27 | 中车株洲电力机车研究所有限公司 | Circuit control method based on solid-state switch and solid-state switch |
| CN114070035A (en) * | 2021-11-12 | 2022-02-18 | 上海联影医疗科技股份有限公司 | Power supply unit and medical equipment |
| CN114070035B (en) * | 2021-11-12 | 2023-12-26 | 上海联影医疗科技股份有限公司 | Power supply device and medical equipment |
| CN115208199A (en) * | 2022-07-21 | 2022-10-18 | 忱芯电子(苏州)有限公司 | High-voltage topological circuit and high-voltage generator using same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102035378A (en) | All solid state high-voltage power supply with positive and negative pulse outputs | |
| CN102969912A (en) | Control and drive circuit and method | |
| CN101917133A (en) | Five-electrical level inverter | |
| CN105119391A (en) | High-efficiency electric energy transmitting terminal and wireless electric energy transmission apparatus | |
| CN102969893A (en) | High-gain boosting type direct-current converter | |
| CN103441683B (en) | A kind of active clamp forward power circuit | |
| CN103490661A (en) | All-solid-state high voltage pulse current source with positive and negative pulse output | |
| CN110048611A (en) | High voltage gain Sofe Switch DC-DC converter based on switching capacity and coupling inductance | |
| CN103618472A (en) | Full-solid-state high-voltage pulse current source with unipolar pulse output | |
| CN103049028A (en) | Constant current source for high voltage magnetic switch resetting | |
| CN102447261B (en) | Alternate charging starting circuit and control method for chained static synchronous compensator | |
| CN102005920A (en) | Three-level buck type conversion circuit and method | |
| CN203219266U (en) | High-voltage series MOS tube drive circuit | |
| CN102983730A (en) | Direct-current harmonic suppression system and method of double reversed star-like rectification system | |
| CN104242666A (en) | Novel inverter welding power supply | |
| CN102368616B (en) | Power factor compensation control circuit of self-turn-off device | |
| CN103647437A (en) | High-voltage high-current IGBT driving system | |
| CN102201737B (en) | High-order energy gaining voltage conversion circuit | |
| CN203896210U (en) | Mini-sized grid-connected inverter | |
| TWI663816B (en) | Interleaved high step-up dc-dc converter | |
| CN116054585A (en) | Novel high-voltage direct-current transformer and control method | |
| CN102710162A (en) | Seven-level circuit, grid-connected inverter and modulation method and device for grid-connected inverter | |
| CN102857136B (en) | Converter for converting high-voltage direct current into alternating current | |
| CN204696955U (en) | A kind of photovoltaic DC-to-AC converter adopting transformer auxiliary resonance | |
| CN102664530B (en) | Soft-switching isolation type switch capacitor regulator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110427 |