CN102201737B - High-order energy gaining voltage conversion circuit - Google Patents

High-order energy gaining voltage conversion circuit Download PDF

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CN102201737B
CN102201737B CN201110066786.3A CN201110066786A CN102201737B CN 102201737 B CN102201737 B CN 102201737B CN 201110066786 A CN201110066786 A CN 201110066786A CN 102201737 B CN102201737 B CN 102201737B
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diode
conversion circuit
controller
circuit
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CN102201737A (en
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谢敏华
易荣
庞辉
冯静波
潘艳
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State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
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China Electric Power Research Institute Co Ltd CEPRI
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Abstract

The invention relates to a high-order energy gaining voltage conversion circuit, which consists of six bridge arms of three phases. Upper and lower bridge arms are connected by bridge arm reactors. Each bridge arm is formed by concatenating high voltage power modules. The high voltage power module comprises a high voltage module, a capacitor and high-order energy gaining equipment which are sequentially connected in parallel. The high voltage power modules of the high-order energy gaining voltage conversion circuit provided by the invention gain energy from high order, and realize wide-range voltage input.

Description

一种高位取能电压变换电路A high-level energy-taking voltage conversion circuit

技术领域 technical field

本发明涉及一种电压变换电路,具体讲涉及一种高位取能电压变换电路。The invention relates to a voltage conversion circuit, in particular to a high-level energy-taking voltage conversion circuit.

背景技术 Background technique

目前针对不同换流阀驱动板的供能方式主要有低压送能和高压取能两类。At present, there are mainly two types of energy supply methods for different converter valve drive boards: low-pressure energy delivery and high-pressure energy acquisition.

对于低压送能中应用最广的是通过高频脉冲变压器把地电位的能量送到位于高压侧的驱动板上的电磁送能方式,这种方式需要高可靠的电压隔离措施,存在外部绝缘和结构安装等问题,因此设备的体积和造价都很大,一股用于电压相对较低场合。The most widely used method for low-voltage energy transmission is the electromagnetic energy transmission method that sends the energy of the ground potential to the driver board on the high-voltage side through a high-frequency pulse transformer. This method requires high-reliability voltage isolation measures, and there are external insulation and structural installation and other issues, so the volume and cost of the equipment are very large, generally used in relatively low voltage occasions.

对于高压取能中常见的有利用特制的电流互感器(CT)在从线路上感应电压,通过处理后提供给驱动板,其特点是在开关器件开通时线路中有电流流过时才能取得能量。这种方式常应用于晶闸管为开关器件的串联阀,因为晶闸管是半控器件不需要关断能量要求。而对于开通和关断都需要能量的全控型开关器件,这种方式很难满足功率模块大功率供能的要求。For high-voltage energy harvesting, it is common to use a special current transformer (CT) to induce voltage from the line, and provide it to the driver board after processing. The characteristic is that the energy can only be obtained when there is current flowing in the line when the switching device is turned on. This method is often used in series valves where thyristors are switching devices, because thyristors are semi-controlled devices that do not require shutdown energy. However, for fully-controlled switching devices that require energy both to be turned on and off, it is difficult to meet the high-power energy supply requirements of the power module in this way.

高压取能中另外一种常见形式是通过开关器件并联的阻容元件结合一定的取能单元电路为驱动供能。这种取能装置是利用在开关器件两端电压出现上升沿时向取能电容充电,直至充电满足要求为止。它主要应用于晶闸管为开关器件的串联阀。而对于高频的开关器件关断过程比较短,如果采用这种取能方式需要很多个周期才能取到要求的能量,不能满足功率模块持续大功率供能要求。Another common form of high-voltage energy harvesting is to supply energy to the drive through the resistance-capacitance elements connected in parallel of the switching device combined with a certain energy harvesting unit circuit. This energy harvesting device is used to charge the energy harvesting capacitor when the voltage at both ends of the switching device rises, until the charging meets the requirements. It is mainly used in series valves where thyristors are switching devices. For high-frequency switching devices, the turn-off process is relatively short. If this energy harvesting method is used, it will take many cycles to obtain the required energy, which cannot meet the continuous high-power energy supply requirements of the power module.

目前所见的常规开关电源未见有应用于高电位取能的报道,其输入电压通常为220V交流、380V交流或100V以内的直流电压,无法满足高压大功率模块高压的要求。此外,常规开关电源的输入电压范围最大为3倍,无法满足功率模块取能电源宽范围电压输入的要求。The conventional switching power supply seen so far has not been reported to be applied to high-potential energy harvesting. Its input voltage is usually 220V AC, 380V AC or DC voltage within 100V, which cannot meet the high-voltage requirements of high-voltage and high-power modules. In addition, the input voltage range of a conventional switching power supply is up to three times, which cannot meet the wide-range voltage input requirements of the power module energy harvesting power supply.

发明内容 Contents of the invention

本发明的目的是提供一种用于高压大功率模块的从高电位取能并实现宽范围电压输入的高位取能电压变换电路。The object of the present invention is to provide a high-level energy-taking voltage conversion circuit for high-voltage and high-power modules that takes energy from high potential and realizes wide-range voltage input.

本发明的目的采用下述技术方案予以实现:Object of the present invention adopts following technical scheme to realize:

一种高位取能电压变换电路,其改进之处在于:所述电路由三相六桥臂构成,所述上下桥臂由桥臂电抗器连接起来;所述每个桥臂由高压功率模块级联而成;所述高压功率模块包括高压模块、电容和高位取能设备;所述高压模块、电容和高位取能设备依次并联。A high-level energy-taking voltage conversion circuit, the improvement of which is that the circuit is composed of three-phase six bridge arms, and the upper and lower bridge arms are connected by bridge arm reactors; each bridge arm is composed of a high-voltage power module stage The high-voltage power module includes a high-voltage module, a capacitor and a high-level energy-taking device; the high-voltage module, capacitor and high-level energy-taking device are connected in parallel in sequence.

本发明提供的一种优选的技术方案是:所述高压模块包括IGBT控制器、全控型电力电子器件IGBT、二极管D、保护设备和控制设备;所述IGBT控制器包括IGBT1控制器和IGBT2控制器;所述全控型电力电子器件IGBT包括IGBT1和IGBT2;所述二极管D包括D3和D4。A preferred technical solution provided by the present invention is: the high-voltage module includes an IGBT controller, a fully-controlled power electronic device IGBT, a diode D, protection equipment, and control equipment; the IGBT controller includes an IGBT1 controller and an IGBT2 controller The fully controlled power electronic device IGBT includes IGBT1 and IGBT2; the diode D includes D3 and D4.

本发明提供的第二优选的技术方案是:所述IGBT1和二极管D3反并联组成可关断晶闸管G1;所述IGBT2和二极管D4反并联组成可关断晶闸管G2;所述控制设备、IGBT1控制器和可关断晶闸管G1依次串联;所述保护设备、IGBT2控制器和可关断晶闸管G2依次串联;所述控制设备与所述保护设备串联;所述IGBT1控制器与IGBT2控制器并联;所述可关断晶闸管G1和可关断晶闸管G2串联。The second preferred technical solution provided by the present invention is: the anti-parallel connection of the IGBT1 and the diode D3 forms the turn-off thyristor G1; the anti-parallel connection of the IGBT2 and the diode D4 forms the turn-off thyristor G2; the control device, the IGBT1 controller connected in series with the turn-off thyristor G1; the protection device, the IGBT2 controller and the turn-off thyristor G2 are connected in series; the control device is connected in series with the protection device; the IGBT1 controller is connected in parallel with the IGBT2 controller; The turn-off thyristor G1 and the turn-off thyristor G2 are connected in series.

本发明提供的第三优选的技术方案是:所述高位取能设备包括缓冲吸收电路和开关电源电路;所述缓冲吸收电路包括电阻R1、电容C2和二极管D2;所述电阻R1和电容C2并联后和二极管D2串联;所述开关电源电路包括变压器T1、电感LLT、二极管D1、电容C1、控制芯片和MOS管Tr;所述变压器T1的一次绕组和电感LLT串联;所述变压器T1的二次绕组、二极管D2和电容C1串联连接;所述控制芯片和MOS管Tr的栅极连接;所述MOS管Tr的漏极分别与电感LLT和缓冲吸收电路二极管D2的正极连接。The third preferred technical solution provided by the present invention is: the high-level energy-taking device includes a buffer absorbing circuit and a switching power supply circuit; the buffer absorbing circuit includes a resistor R1, a capacitor C2, and a diode D2; the resistor R1 and capacitor C2 are connected in parallel and diode D2 in series; the switching power supply circuit includes a transformer T1, an inductor L LT , a diode D1, a capacitor C1, a control chip and a MOS tube Tr; the primary winding of the transformer T1 is connected in series with the inductor L LT ; the transformer T1 The secondary winding, the diode D2 and the capacitor C1 are connected in series; the control chip is connected to the gate of the MOS transistor Tr; the drain of the MOS transistor Tr is respectively connected to the anode of the inductance L LT and the snubber circuit diode D2.

本发明提供的第四优选的技术方案是:所述高位取能设备称作电压变换电路,所述电压变换电路采用的单管反激式结构。The fourth preferred technical solution provided by the present invention is: the high-level energy-taking device is called a voltage conversion circuit, and the voltage conversion circuit adopts a single-transistor flyback structure.

与现有技术相比,本发明达到的有益效果是:Compared with prior art, the beneficial effect that the present invention reaches is:

1、本发明提供的高位取能电压变换电路从功率模块高电位取能,避免了高强度绝缘设计,简化了应用系统的结构;1. The high-level energy-taking voltage conversion circuit provided by the present invention obtains energy from the high-potential of the power module, which avoids high-strength insulation design and simplifies the structure of the application system;

2、本发明提供的高位取能电压变换电路采用高压MOS管实现了高输入电压直接变换,结构简单、控制方便;2. The high-level energy-taking voltage conversion circuit provided by the present invention uses a high-voltage MOS tube to realize direct conversion of high input voltage, and has a simple structure and convenient control;

3、本发明提供的高位取能电压变换电路采用单管反激式拓扑结构拓扑,电压输入宽范围,输入阻抗高;3. The high-level energy-taking voltage conversion circuit provided by the present invention adopts a single-tube flyback topology topology, with a wide range of voltage input and high input impedance;

4、本发明提供的高位取能电压变换电路能持续取能工作,实现持续大功率稳定供电。4. The high-level energy-acquiring voltage conversion circuit provided by the present invention can continuously obtain energy and realize continuous high-power stable power supply.

附图说明 Description of drawings

图1是高位取能电路变换电路的原理图;Fig. 1 is the schematic diagram of the conversion circuit of the high-level energy-taking circuit;

图2是高压功率模块电路的原理图;Fig. 2 is a schematic diagram of a high-voltage power module circuit;

图3是高位取能设备的原理图。Fig. 3 is a schematic diagram of a high-level energy harvesting device.

具体实施方式 Detailed ways

下面结合附图对本发明的具体实施方式做进一步的详细说明。The specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

图1是高位取能电路变换电路的原理图;该电路由三相六桥臂构成,每相的上下桥臂由桥臂电抗器连接起来;每个桥臂由若干个高压功率模块级联而成;高压功率模块包括高压模块、电容和高位取能设备;高压模块、电容和高位取能设备依次并联。Figure 1 is a schematic diagram of the conversion circuit of the high-level energy-taking circuit; the circuit is composed of three-phase six bridge arms, and the upper and lower bridge arms of each phase are connected by bridge arm reactors; each bridge arm is composed of several high-voltage power modules connected in cascade. The high-voltage power module includes a high-voltage module, a capacitor and a high-level energy-taking device; the high-voltage module, a capacitor and a high-level energy-taking device are connected in parallel in sequence.

图2是高压功率模块电路的原理图;其中,高压模块包括IGBT控制器、全控型电力电子器件IGBT、二极管D、保护设备和控制设备;IGBT控制器包括IGBT1控制器和IGBT2控制器;全控型电力电子器件IGBT包括IGBT1和IGBT2;二极管D包括D3和D4;IGBT1和二极管D3反并联组成可关断晶闸管G1;IGBT2和二极管D4反并联组成可关断晶闸管G2;控制设备、IGBT1控制器和可关断晶闸管G1依次串联;保护设备、IGBT2控制器和可关断晶闸管G2依次串联;控制设备与所述保护设备串联;IGBT1控制器与IGBT2控制器并联;可关断晶闸管G1和可关断晶闸管G2串联。本发明提供的高位取能电压变换电路输入电压为高压功率模块直流侧电压,高压功率模块采用一个大电容在运行过程中在直流侧提供一个稳定的直流工作电压,为高压功率模块提供了稳定的能量获取点。Figure 2 is a schematic diagram of a high-voltage power module circuit; where the high-voltage module includes an IGBT controller, a fully-controlled power electronic device IGBT, a diode D, protection equipment, and control equipment; the IGBT controller includes an IGBT1 controller and an IGBT2 controller; The controlled power electronic device IGBT includes IGBT1 and IGBT2; the diode D includes D3 and D4; the anti-parallel connection of IGBT1 and diode D3 forms the turn-off thyristor G1; the anti-parallel connection of IGBT2 and diode D4 forms the turn-off thyristor G2; control equipment, IGBT1 controller and the turn-off thyristor G1 in series; the protection equipment, the IGBT2 controller and the turn-off thyristor G2 are connected in series; the control equipment is connected in series with the protection equipment; the IGBT1 controller is connected in parallel with the IGBT2 controller; the turn-off thyristor G1 and the turn-off thyristor The disconnected thyristor G2 is connected in series. The input voltage of the high-level energy-taking voltage conversion circuit provided by the present invention is the DC side voltage of the high-voltage power module. The high-voltage power module uses a large capacitor to provide a stable DC working voltage on the DC side during operation, providing a stable voltage for the high-voltage power module. Energy harvesting points.

图3是高位取能设备的原理图;高位取能设备包括缓冲吸收电路和开关电源电路;缓冲吸收电路包括电阻R1、电容C2和二极管D2;电阻R1和电容C2并联后和二极管D2串联;开关电源电路包括变压器T1、电感LLT、二极管D1、电容C1、控制芯片和MOS管Tr;变压器T1的一次绕组和电感LLT串联;变压器T1的二次绕组、二极管D2和电容C1串联连接;控制芯片和MOS管Tr的栅极连接;MOS管Tr的漏极分别与电感LLT和缓冲吸收电路二极管D2的正极连接;高位取能设备称作电压变换电路,电压变换电路采用的单管反激式结构。如图3所示,宽范围高电压输入的正负极分别和图2中高位取能设备所在支路的正负极连接。Figure 3 is a schematic diagram of high-level energy harvesting equipment; the high-level energy harvesting device includes a buffer absorption circuit and a switching power supply circuit; the buffer absorption circuit includes a resistor R1, a capacitor C2, and a diode D2; the resistor R1 and capacitor C2 are connected in parallel and connected in series with the diode D2; the switch The power circuit includes transformer T1, inductor L LT , diode D1, capacitor C1, control chip and MOS tube Tr; the primary winding of transformer T1 is connected in series with inductor L LT ; the secondary winding of transformer T1, diode D2 and capacitor C1 are connected in series; the control The chip is connected to the gate of the MOS transistor Tr; the drain of the MOS transistor Tr is respectively connected to the anode of the inductance L LT and the buffer absorption circuit diode D2; the high-level energy-taking device is called a voltage conversion circuit, and the single-transistor flyback used in the voltage conversion circuit formula structure. As shown in Figure 3, the positive and negative poles of the wide-range high-voltage input are respectively connected to the positive and negative poles of the branch where the high-level energy harvesting device is located in Figure 2.

电压变换电路采用具有结构简单、控制方便优点单管反激式拓扑结构,其完成将高电压转换成低电压,电压变换电路开关器件采用高压MOS管实现高电压的转换;电压变换电路采用缓冲吸收电路,吸收反激浪涌电压,增加电路工作可靠性;电压变换电路需要在从250V~2500V的宽电压输入工作范围内可靠稳定工作,在工作过程中,高压功率模块的直流侧电容在250V~2500V之间波动,并伴有纹波电压,电压变换电路在输入电压波动的情况下,变换输出的电压15V,保持稳定。The voltage conversion circuit adopts a single-tube flyback topology with the advantages of simple structure and convenient control, which completes the conversion of high voltage into low voltage. The switching device of the voltage conversion circuit uses a high-voltage MOS tube to achieve high voltage conversion; The circuit absorbs the flyback surge voltage and increases the reliability of the circuit; the voltage conversion circuit needs to work reliably and stably within the wide voltage input range from 250V to 2500V. During the working process, the DC side capacitance of the high voltage power module is between 250V and Fluctuates between 2500V and accompanied by ripple voltage, the voltage conversion circuit converts the output voltage to 15V and keeps it stable when the input voltage fluctuates.

最后应该说明的是:结合上述实施例仅说明本发明的技术方案而非对其限制。所属领域的普通技术人员应当理解到:本领域技术人员可以对本发明的具体实施方式进行修改或者等同替换,但这些修改或变更均在申请待批的权利要求保护范围之中。Finally, it should be noted that: the combination of the above embodiments only illustrates the technical solution of the present invention rather than limiting it. Those of ordinary skill in the art should understand that: those skilled in the art can make modifications or equivalent replacements to the specific embodiments of the present invention, but these modifications or changes are all within the protection scope of the pending claims.

Claims (1)

1. a high-order energy gaining voltage conversion circuit, is characterized in that, described circuit is made up of three-phase six brachium pontis, and upper and lower bridge arm is coupled together by brachium pontis reactor; Each brachium pontis is formed by high-voltage power module-cascade; Described high-voltage power module comprises high-pressure modular, electric capacity and a high position and gets energy equipment; It is in parallel successively that described high-pressure modular, electric capacity and a high position get energy equipment;
Described high-pressure modular comprises IGBT controller, all-controlling power electronics device IGBT, diode D, proterctive equipment and control appliance; Described IGBT controller comprises IGBT1 controller and IGBT2 controller; Described all-controlling power electronics device IGBT comprises IGBT1 and IGBT2; Described diode D comprises D3 and D4;
Described IGBT1 and diode D3 inverse parallel composition turn-off thyristor G1; Described IGBT2 and diode D4 inverse parallel composition turn-off thyristor G2; Described control appliance, IGBT1 controller and turn-off thyristor G1 connect successively; Described proterctive equipment, IGBT2 controller and turn-off thyristor G2 are connected in series; Described control appliance is connected with described proterctive equipment; Described IGBT1 controller is in parallel with IGBT2 controller; Described turn-off thyristor G1 and turn-off thyristor G2 connects;
A described high position is got and can be comprised snubber circuit and switching power circuit by equipment; Described snubber circuit comprises resistance R1, electric capacity C2 and diode D2; Connect with diode D2 after described resistance R1 and electric capacity C2 parallel connection; Described switching power circuit comprises transformer T1, inductance L lT, diode D1, electric capacity C1, control chip and metal-oxide-semiconductor Tr; A winding of described transformer T1 and inductance L lTseries connection; Secondary winding, the diode D2 and electric capacity C1 of described transformer T1 are connected in series; Described control chip is connected with the grid of metal-oxide-semiconductor Tr; The drain electrode of described metal-oxide-semiconductor Tr respectively with inductance L lTbe connected with the positive pole of snubber circuit diode D2;
A described high position is got and can be called voltage conversion circuit by equipment, the single switch flyback formula structure that described voltage conversion circuit adopts;
Voltage conversion circuit adopts single switch flyback formula topological structure, and it completes and converts high voltage to low-voltage, and voltage conversion circuit switching device adopts high-voltage MOS pipe to realize high-tension conversion; Voltage conversion circuit adopts snubber circuit, absorbs flyback surge voltage, increases circuit working reliability; Voltage conversion circuit needs from reliable and stable work within the scope of the Width funtion input service of 250V ~ 2500V, in the course of the work, the DC bus capacitor of high-voltage power module fluctuates between 250V ~ 2500V, and with ripple voltage, voltage conversion circuit is when input voltage fluctuation, the voltage 15V that conversion exports, keeps stable.
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CN101478301A (en) * 2008-12-31 2009-07-08 中国电力科学研究院 High potential energy collecting device
CN101546964A (en) * 2009-05-12 2009-09-30 北京交通大学 Module combined multi-level converter
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