CN105939126B - A kind of quasi- Z-source inverter of switched inductors type mixing - Google Patents
A kind of quasi- Z-source inverter of switched inductors type mixing Download PDFInfo
- Publication number
- CN105939126B CN105939126B CN201610508676.0A CN201610508676A CN105939126B CN 105939126 B CN105939126 B CN 105939126B CN 201610508676 A CN201610508676 A CN 201610508676A CN 105939126 B CN105939126 B CN 105939126B
- Authority
- CN
- China
- Prior art keywords
- diode
- inductance
- capacitance
- anode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims abstract description 4
- 230000005611 electricity Effects 0.000 claims description 7
- 230000001235 sensitizing Effects 0.000 description 12
- 231100000202 sensitizing Toxicity 0.000 description 12
- 238000010586 diagram Methods 0.000 description 4
- 230000000051 modifying Effects 0.000 description 4
- 230000000875 corresponding Effects 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 102000003712 Complement Factor B Human genes 0.000 description 2
- 108090000056 Complement Factor B Proteins 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000007906 compression Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 101710031899 moon Proteins 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
Abstract
The present invention provides a kind of switched inductors types to mix quasi- Z-source inverter circuit, including voltage source, the switched inductors unit being made of the first inductance, the second inductance, the 4th diode, the 5th diode and the 6th diode, the boost switching unit being made of the first capacitance, the first diode, the second diode and metal-oxide-semiconductor S, the quasi- Z source units being made of third inductance, the second capacitance, third capacitance and third diode, three phase inverter bridge, output inductor, filter capacitor and load.The characteristic of entire circuit combines boost switching unit and the respective single-stage buck characteristic of quasi- Z source units and switched inductors charge parallel discharged in series, with higher output voltage gain, output and input are altogether, the voltage stress of switching device in inverter bridge is reduced, and there is no the dash currents that inrush current and switching tube open moment for circuit.
Description
Technical field
The present invention relates to power electronic circuit technical fields, and in particular to a kind of quasi- Z-source inverter of switched inductors type mixing
Circuit.
Background technology
In fuel cell power generation, photovoltaic generation, due to single solar cell or single fuel cell provide it is straight
Galvanic electricity pressure is relatively low, cannot be satisfied the power demand of existing electrical equipment, can not meet the needs of grid-connected, generally requiring will be multiple
Battery is together in series the voltage for reaching required.On the one hand this method greatly reduces the reliability of whole system, on the other hand
It also needs to solve the problems, such as series average-voltage.For this reason, it may be necessary to can be the high-gain converter circuit that low voltage transition is high voltage.It is close several
The sources the Z booster converter that year proposes is a kind of high-gain converter circuit, but the circuit has higher impedance network capacitance electricity
Compression, source current is discontinuous, exports and inputs not altogether, and there are problems that very big inrush current when circuit start,
Limit the application of the circuit in practice.
Invention content
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, it is inverse to provide a kind of quasi- sources Z of switched inductors type mixing
Become device circuit, specific technical solution is as follows.
A kind of quasi- Z-source inverter circuit of switched inductors type mixing, including voltage source, switched inductors unit, boost switching list
First, quasi- Z source units, three phase inverter bridge, output inductor, filter capacitor and exchange side threephase load.The switched inductors list
Member is made of the first inductance, the second inductance, the 4th diode, the 5th diode and the 6th diode；The boost switching unit
It is made of the first capacitance, the first diode, metal-oxide-semiconductor S and the second diode；The quasi- Z source units are by third inductance, the second electricity
Hold, third capacitance and third diode are constituted.
A kind of above-mentioned switched inductors type mixes in quasi- Z-source inverter circuit, anode and the first inductance of the voltage source
One end is connected with the anode of the 4th diode；The cathode of 4th diode is electric with the cathode of the 5th diode and second respectively
One end of sense connects；The other end of first inductance connects with the anode of the anode of the 5th diode and the 6th diode respectively
It connects；The cathode drain electrode with the other end of the second inductance, the anode of the first diode and metal-oxide-semiconductor S respectively of 6th diode
Connection；The source electrode of the metal-oxide-semiconductor S is connect with the cathode of the anode of the second diode and the first capacitance respectively；One or two pole
The cathode of pipe is connect with the anode of the anode of the first capacitance, the cathode of third capacitance and third diode respectively；Described 3rd 2
The cathode of pole pipe is connect with one end of the anode of the second capacitance and third inductance respectively；The anode of the third capacitance is respectively with the
The other end of three inductance is connected with the positive ends of three phase inverter bridge；The cathode of voltage source the moon with the second diode respectively
Pole, the cathode of the second capacitance are connected with the negative polarity end of three phase inverter bridge.
Compared with prior art, circuit of the present invention has the following advantages that and technique effect：Circuit output voltage of the present invention increases
Beneficial higher reduces the voltage stress of switching device in inverter bridge；There is good inhibiting effect to inrush current, reliably
Property improve；And output with input altogether, thus the generations of electricity by new energy skill such as be more suitably applied to fuel cell power generation and photovoltaic generation
Art field.
Description of the drawings
Fig. 1 is that a kind of switched inductors type in the specific embodiment of the invention mixes quasi- Z-source inverter circuit.
Fig. 2 is the simple equivalent circuit that a kind of switched inductors type shown in Fig. 1 mixes that quasi- Z-source inverter carries out model analysis.
Fig. 3 a, Fig. 3 b are that the quasi- Z-source inverter of a kind of switched inductors type mixing shown in Fig. 1 is straight-through in its three phase inverter bridge respectively
When and it is non-straight-through when equivalent circuit diagram.
Fig. 4 a are that the sensitizing factor curve of circuit of the present invention is expanded with switched inductors Z-source inverter, based on diode two level
Quasi- Z-source inverter and the sensitizing factor curve of traditional Z-source inverter compare figure.
Fig. 4 b are the graph of relation of the index of modulation M and exchange side output voltage gain G of four kinds of inverters.
Fig. 4 c are the comparison figure of switching device voltage stress in four kinds of inverters.
Fig. 4 d are with ViIt is related to exchange side that circuit direct side of the present invention is given for=20V, straight-through duty ratio D=0.2
The simulation result diagram of variable.
Specific implementation mode
The above content is explained in detail technical scheme of the present invention, below in conjunction with attached drawing to the specific of the present invention
Implementation is further described.
With reference to figure 1, a kind of quasi- Z-source inverter circuit of switched inductors type mixing of the present invention comprising voltage source Vi、
Switched inductors unit, boost switching unit, quasi- Z source networks, three phase inverter bridge, output inductor, filter capacitor and three are opposite
Claim load.The switched inductors unit is by the first inductance L1, the second inductance L2, the 4th diode D4, the 5th diode D5With the 6th
Diode D6It constitutes；The boost switching unit is by the first capacitance C1, the first diode D1, metal-oxide-semiconductor S and the second diode D2Structure
At；The quasi- Z source networks are by third inductance L3, the second capacitance C2, third capacitance C3With third diode D3It constitutes.Work as inverter bridge
It is straight-through (to be equivalent to S1It is closed) while when metal-oxide-semiconductor S conducting, the first diode D1, the second diode D2, third diode D3
With the 5th diode D5It is turned off, the 4th diode D4With the 6th diode D6Conducting, three phase inverter bridge exchange side load short circuits.
Second capacitance C2To third inductance L3Charging；The voltage source ViWith the first capacitance C1With third capacitance C3Together in parallel first
Inductance L1With the second inductance L2Charging energy-storing.Straight-through (it is equivalent to S when inverter bridge is non-1Shutdown) while when metal-oxide-semiconductor S shutdown, inverter bridge
It exchanges lateral load and accesses main circuit.The first diode D1, the second diode D2, third diode D3With the 5th diode D5
It is both turned on, the 4th diode D4With the 6th diode D6Shutdown.The voltage source ViWith the first inductance L1With the second inductance L2Together
To the first capacitance C in parallel1With the second capacitance C2Charging energy-storing, forming circuit；Third inductance L3With third capacitance C3Parallel connection, shape
At circuit；Meanwhile voltage source ViWith the first inductance L1, the second inductance L2With third inductance L3Together by three phase inverter bridge to friendship
Flow lateral load power supply.Entire circuit structure is simple, has higher output voltage gain, exports with input altogether, and circuit is not
There are the current impacts that moment is opened in starting current impact and switching tube.
The specific connection of circuit of the present invention is as follows：The one end and the 4th diode of the anode of the voltage source with the first inductance
Anode connection；The cathode of 4th diode is connect with one end of the cathode of the 5th diode and the second inductance respectively；Institute
The other end for stating the first inductance is connect with the anode of the anode of the 5th diode and the 6th diode respectively；6th diode
Cathode connect respectively with the drain electrode of the other end of the second inductance, the anode of the first diode and metal-oxide-semiconductor S；The metal-oxide-semiconductor S's
Source electrode is connect with the cathode of the anode of the second diode and the first capacitance respectively；The cathode of first diode is respectively with first
The anode of capacitance, the cathode of third capacitance are connected with the anode of third diode；The cathode of the third diode is respectively with
The anode of two capacitances is connected with one end of third inductance；The third capacitance anode respectively with the other end of third inductance and
The positive ends of three phase inverter bridge connect；The cathode of the voltage source respectively with the cathode of the second diode, the second capacitance it is negative
Pole is connected with the negative polarity end of three phase inverter bridge.
Fig. 3 a, Fig. 3 b give the process chart of circuit of the present invention.Fig. 3 a, Fig. 3 b are that inverter bridge is straight-through and non-straight respectively
The equivalent circuit diagram of logical period.Solid line indicates there is the part that electric current flows through in converter in figure, and dotted line indicates in converter without electricity
The part that stream flows through.
The course of work of the present invention is as follows：
Stage 1, such as Fig. 3 a：Inverter bridge is straight-through (to be equivalent to S1It is closed) while when metal-oxide-semiconductor S conducting, first diode
D1, the second diode D2, third diode D3With the 5th diode D5It is turned off, the 4th diode D4With the 6th diode D6It leads
It is logical, three phase inverter bridge exchange side load short circuits.Circuit forms two circuits, is respectively：Second capacitance C2To third inductance L3It fills
Electricity, forming circuit；Voltage source ViWith the first capacitance C1With third capacitance C3Together to the first inductance L in parallel1With the second inductance L2
Charging energy-storing, forming circuit.
Stage 2, such as Fig. 3 b：Non- lead directly to of inverter bridge (is equivalent to S1Shutdown) while when metal-oxide-semiconductor S shutdown, inverter bridge exchange side
Load access main circuit.The first diode D1, the second diode D2, third diode D3With the 5th diode D5It is both turned on,
4th diode D4With the 6th diode D6Shutdown.Circuit forms four circuits, is respectively：The voltage source ViWith the first inductance
L1With the second inductance L2Together to the first capacitance C in parallel1With the second capacitance C2Charging energy-storing, forming circuit；Third inductance L3With
Third capacitance C3Parallel connection, forming circuit；Meanwhile voltage source ViWith the first inductance L1, the second inductance L2With third inductance L3Lead to together
It crosses three phase inverter bridge and gives exchange side load supplying.
To sum up situation, when inverter bridge is led directly to, metal-oxide-semiconductor S is connected, and when inverter bridge is non-straight-through, metal-oxide-semiconductor S is turned off.Therefore it sets
The straight-through duty ratio of inverter bridge is D, then the conducting dutycycle of metal-oxide-semiconductor S is similarly D, and the configuration switch period is Ts.And set VL1With
VL2And VL3Respectively the first inductance L1, the second inductance L2With third inductance L3The voltage at both ends, VC1、VC2And VC3Respectively first
Capacitance C1, the second capacitance C2With third capacitance C3Voltage, VSFor the voltage between metal-oxide-semiconductor S drain electrodes and source electrode, VPNFor inverter bridge
Direct current side chain voltage.After inverter enters steady operation, voltage relationship derivation below is obtained.
Stage 1：Inverter bridge is straight-through (to be equivalent to S1Be closed) at the same metal-oxide-semiconductor be connected during, corresponding equivalent circuit diagram 3a institutes
Show, therefore has following formula：
VL1_on=VL2_on=Vi+VC1+VC3 (1)
VL3_on=VC2 (2)
VS=VPN=0 (3)
The straight-through time of inverter bridge and the turn-on time of metal-oxide-semiconductor S are DTs。
Stage 2：Non- lead directly to of inverter bridge (is equivalent to S1Shutdown) at the same metal-oxide-semiconductor S shutdown during, corresponding equivalent circuit is as schemed
Shown in 3b, therefore there is following formula：
VL1_off+VL2_off=Vi-VC1 (4)
VL3_off=-VC3 (5)
VC1=VC2 (6)
VS=VC1 (7)
VPN=VC1+VC3 (8)
Inverter bridge non-straight-through time and the turn-off time of metal-oxide-semiconductor S are (1-D) Ts。
According to the above analysis, to the first inductance L1, the second inductance L2With third inductance L3Inductance Flux consumption conservation is used respectively
Principle, simultaneous formula (1), formula (2), formula (4) and formula (5) can obtain：
Vi+(2D-1)VC1+DVC3=(1-D) VL2_off (9)
Vi+(2D-1)VC1+DVC3=(1-D) VL1_off (10)
DVC2=(1-D) VC3 (11)
Thus, simultaneous formula (6), formula (7), formula (8), formula (9), formula (10) and formula (11) can obtain the first capacitance C1Voltage
VC1With the second capacitance C2Voltage VC2Voltage source ViBetween relational expression be：
Third capacitance C3Voltage VC3With supply voltage ViRelational expression be：
Voltage between the hourglass source electrode at the both ends metal-oxide-semiconductor S is：
Inversion bridge DC side chain voltage VPNFor：
Then sensitizing factor (Boost Factor) B of inverter circuit of the present invention is：
Corresponding exchange side output voltage gain G is：
G=MB=(0~∞) (17)
The sensitizing factor curve and switched inductors Z-source inverter of circuit of the present invention as shown in Figure 4 a are based on diode two
The sensitizing factor curve of quasi- Z-source inverter and traditional Z-source inverter that grade is expanded compares figure；Figure includes circuit of the present invention
Sensitizing factor curve, the sensitizing factor curve of switched inductors Z-source inverter, the quasi- Z-source inverter expanded based on diode two level
Sensitizing factor curve, and traditional Z-source inverter sensitizing factor curve.As seen from the figure, circuit of the present invention does not surpass in duty ratio D
In the case of crossing 0.26, sensitizing factor B can reach very big, hence it is evident that it is higher than the sensitizing factor of other inverter topologies,
And the duty ratio D of circuit of the present invention does not exceed 0.26.
Fig. 4 b are the graph of relation of the index of modulation M and exchange side output voltage gain G of four kinds of inverters, as seen from the figure
In the case of exchange side output voltage gain G having the same, circuit of the present invention can be used than other three kinds of inverter circuits
Index of modulation M to bigger is modulated inverter, and then improves the DC voltage utilization rate of inverter, improves exchange
The quality of side output voltage waveforms.
Fig. 4 c are the comparison of switching device voltage stress in four kinds of inverters, are opened in circuit inverter bridge of the present invention as seen from the figure
The voltage stress for closing device will be small than other three kinds of inverter topologies, and then reduces the cost using switching device
With.
Fig. 4 d are with ViIt is related to exchange side that circuit direct side of the present invention is given for=20V, straight-through duty ratio D=0.2
The simulation result of variable.When D=0.2, sensitizing factor B=5, inverter bridge DC-link voltage VPN=B*Vi=100V, capacitance voltage
VC1=VC3=80V, VC2The voltage VS=80V at the both ends=20V, switch S.In addition, giving inductive current i in Fig. 4 dL1,iL2
And iL3Waveform, exchange side exports phase voltage VphaseWith output line voltage VlineWaveform and three-phase symmetrical ohmic load two
Terminal voltage VRLWaveform.
In conclusion there is circuit of the present invention higher output voltage gain, output altogether, to reduce inverter bridge with input
The voltage stress of middle switching device, and there is no the dash currents that inrush current and switching tube open moment for circuit.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (1)
1. a kind of switched inductors type mixes quasi- Z-source inverter circuit, it is characterised in that including voltage source（Vi）, switched inductors unit,
Boost switching unit, quasi- Z source units, three phase inverter bridge, output inductor, filter capacitor and three phase symmetry load；It is described to open
Inductance unit is closed by the first inductance（L1）, the second inductance（L2）, the 4th diode（D4）, the 5th diode（D5）With the six or two pole
Pipe（D6）It constitutes；The boost switching unit is by the first capacitance（C1）, the first diode（D1）, metal-oxide-semiconductor（S）With the second diode
（D2）It constitutes；The quasi- Z source units are by third inductance（L3）, the second capacitance（C2）, third capacitance（C3）With third diode（D3）
It constitutes；The voltage source（Vi）Anode with the first inductance（L1）One end and the 4th diode（D4）Anode connection；Described
Four diodes（D4）Cathode respectively with the 5th diode（D5）Cathode and the second inductance（L2）One end connection；Described first
Inductance（L1）The other end respectively with the 5th diode（D5）Anode and the 6th diode（D6）Anode connection；Described 6th
Diode（D6）Cathode respectively with the second inductance（L2）The other end, the first diode（D1）Anode and metal-oxide-semiconductor（S）Leakage
Pole connects；The metal-oxide-semiconductor（S）Source electrode respectively with the second diode（D2）Anode and the first capacitance（C1）Cathode connection；Institute
State the first diode（D1）Cathode respectively with the first capacitance（C1）Anode, third capacitance（C3）Cathode and third diode
（D3）Anode connection；The third diode（D3）Cathode respectively with the second capacitance（C2）Anode and third inductance（L3）
One end connection；The third capacitance（C3）Anode respectively with third inductance（L3）The other end and three phase inverter bridge anode
Property end connection；The voltage source（Vi）Cathode respectively with the second diode（D2）Cathode, second capacitance（C2）Cathode and
The negative polarity end of three phase inverter bridge connects；When the bridge arm direct pass exchange side load short circuits while metal-oxide-semiconductor of three phase inverter bridge（S）Conducting
When, first diode（D1）, the second diode（D2）, third diode（D3）With the 5th diode（D5）It is turned off, the 4th
Diode（D4）With the 6th diode（D6）Conducting, the second capacitance（C2）To third inductance（L3）Charging；The voltage source（Vi）With
First capacitance（C1）With third capacitance（C3）Together to the first inductance in parallel（L1）With the second inductance（L2）Charging energy-storing；When three
The bridge arm of phase inverter bridge is non-straight to be connected into exchange lateral load while metal-oxide-semiconductor（S）When shutdown, first diode（D1）, second
Diode（D2）, third diode（D3）With the 5th diode（D5）It is both turned on, the 4th diode（D4）With the 6th diode（D6）
Shutdown, the voltage source（Vi）With the first inductance（L1）With the second inductance（L2）Together to the first capacitance in parallel（C1）With second
Capacitance（C2）Charging energy-storing, forming circuit；Third inductance（L3）With third capacitance（C3）Parallel connection, forming circuit；Meanwhile voltage source
（Vi）With the first inductance（L1）, the second inductance（L2）With third inductance（L3）It is supplied together to exchange lateral load by three phase inverter bridge
Electricity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610508676.0A CN105939126B (en) | 2016-06-30 | 2016-06-30 | A kind of quasi- Z-source inverter of switched inductors type mixing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610508676.0A CN105939126B (en) | 2016-06-30 | 2016-06-30 | A kind of quasi- Z-source inverter of switched inductors type mixing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105939126A CN105939126A (en) | 2016-09-14 |
| CN105939126B true CN105939126B (en) | 2018-09-14 |
Family
ID=56873006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610508676.0A Active CN105939126B (en) | 2016-06-30 | 2016-06-30 | A kind of quasi- Z-source inverter of switched inductors type mixing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105939126B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134942A (en) * | 2017-06-16 | 2017-09-05 | 华南理工大学 | A kind of quasi- Z-source inverter of active switch capacitor |
| CN107565814A (en) * | 2017-09-30 | 2018-01-09 | 华南理工大学 | A kind of quasi- Z source switch boosting inverters of high-gain suitable for fuel cell power generation |
| CN111865129B (en) * | 2020-07-09 | 2021-10-26 | 南京航空航天大学 | Four-switch single-phase single-stage type switch boosting inverter |
| CN112054707A (en) * | 2020-08-12 | 2020-12-08 | 中国科学院电工研究所 | Micro inverter applied to high-voltage thin-film photovoltaic module based on switch inductor |
| KR20220090472A (en) * | 2020-12-22 | 2022-06-29 | 한국과학기술원 | Load driving apparatus |
| CN115800734B (en) * | 2023-02-08 | 2023-05-02 | 浙江日风电气股份有限公司 | Single-stage second-order boost inverter, boost method, boost device, single-stage second-order boost inverter equipment and medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529918A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | High-gain Trans-Z source boost converter |
| CN205847124U (en) * | 2016-06-30 | 2016-12-28 | 华南理工大学 | A kind of switched inductors type mixes quasi-Z-source inverter |
-
2016
- 2016-06-30 CN CN201610508676.0A patent/CN105939126B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529918A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | High-gain Trans-Z source boost converter |
| CN205847124U (en) * | 2016-06-30 | 2016-12-28 | 华南理工大学 | A kind of switched inductors type mixes quasi-Z-source inverter |
Non-Patent Citations (2)
| Title |
|---|
| A new sitched-inductor quasi-z-source inverter topology;M. A. Ismeil;《15th International Power Electronics and Motion Control Conference, EPE-PEMC 2012 ECCE Europe》;20121231;第DS3d.2.1-5页 * |
| Improved switched inductor quasi-switched-boost inverter with low input current ripple;Andrii Chub等;《56th International Scientific Conference on Power and Engineering of Riga Technical University》;20151231;第1-6页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105939126A (en) | 2016-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105939126B (en) | A kind of quasi- Z-source inverter of switched inductors type mixing | |
| CN105958823B (en) | A kind of quasi- Z source converter circuit of electric current continuous type high-gain boost switching | |
| CN206250979U (en) | A kind of quasi-resonance active-clamp flyback converter | |
| CN205847093U (en) | A kind of electric current continuous high-gain boost switching quasi-Z source converter circuit | |
| CN107517016A (en) | With the high step-up ratio Y source inventers for suppressing the influence of coupling inductance leakage inductance | |
| CN105958855B (en) | A kind of quasi- Z-source inverter of high-gain | |
| CN108183603B (en) | A kind of single-stage is without bridge Sofe Switch resonance isolated form circuit of power factor correction | |
| CN104009633A (en) | Current continuous type high-gain DC-DC converter circuit | |
| CN205847124U (en) | A kind of switched inductors type mixes quasi-Z-source inverter | |
| CN110165921B (en) | Switch inductor type quasi Z source inverter with high output voltage gain | |
| CN110768552A (en) | Double-coil coupling inductance type impedance source inverter for inhibiting DC link voltage peak | |
| CN206117540U (en) | Switch accurate Z source dc -to -ac converter of type high -gain that steps up | |
| CN107565814A (en) | A kind of quasi- Z source switch boosting inverters of high-gain suitable for fuel cell power generation | |
| CN109004835A (en) | The quasi- source the Z DC-DC converter of isolated form high-gain suitable for photovoltaic power generation | |
| CN108616224A (en) | A kind of single-phase seven electrical level inverter of booster type | |
| CN205847090U (en) | A kind of mixed type quasi-boost switching DC DC changer | |
| CN107834881A (en) | A kind of high boost capability type Z-source inverter topological structure | |
| TWI664797B (en) | Dc power converter with high voltage gain | |
| CN105978322A (en) | Switch capacitor type high-gain quasi Z source DC-DC converter | |
| CN206422691U (en) | A kind of type high-gain Z sources DC DC converters altogether | |
| CN106452152A (en) | Switch boost type high-gain quasi-Z-source inverter | |
| CN108233756A (en) | A kind of double ground connection half-bridge inverters of single input and its control method | |
| CN110061523B (en) | Multifunctional single-phase grid-connected inversion system and method with novel topological structure | |
| CN208299698U (en) | A kind of convertible frequency air-conditioner power circuit of adjustable dc voltage | |
| CN205847126U (en) | A kind of quasi-Z-source inverter of novel high-gain |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |