CN106452024A - Switching power supply and single power supply-powered negative voltage driving circuit - Google Patents

Switching power supply and single power supply-powered negative voltage driving circuit Download PDF

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Publication number
CN106452024A
CN106452024A CN201611083955.3A CN201611083955A CN106452024A CN 106452024 A CN106452024 A CN 106452024A CN 201611083955 A CN201611083955 A CN 201611083955A CN 106452024 A CN106452024 A CN 106452024A
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CN
China
Prior art keywords
negative pressure
semiconductor
oxide
voltage
metal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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CN201611083955.3A
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Chinese (zh)
Inventor
李祥忠
程渊
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Shenzhen Gap Technology Co Ltd
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Shenzhen Gap Technology Co Ltd
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Application filed by Shenzhen Gap Technology Co Ltd filed Critical Shenzhen Gap Technology Co Ltd
Priority to CN201611083955.3A priority Critical patent/CN106452024A/en
Publication of CN106452024A publication Critical patent/CN106452024A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Abstract

The invention discloses a switching power supply and a single power supply-powered negative voltage driving circuit, wherein the negative voltage driving circuit is used for controlling the fast switching-off of an MOS (metal oxide semiconductor) tube in the switching power supply when voltage is reverse, and comprises a current amplification module, a current limiting module and a negative voltage voltage-stabilizing module; when a switching driving circuit outputs a positive driving signal, the current amplification module amplifies the positive driving signal; the positive driving signal is output to the negative voltage voltage-stabilizing module after being subjected to current limiting by the current limiting module; after the voltage-stabilizing processing by the negative voltage voltage-stabilizing module, the MOS tube is driven to be started; meanwhile, the capacity charging in the negative voltage voltage-stabilizing module is controlled; when the driving signal is reverse, the MOS tube is fast switched off by the current limiting module. During power supplying by the single power supply, the positive and negative voltage driving is realized through the negative voltage driving circuit, so that the driving circuit is more stable; the anti-interference performance is high; in addition, the switching-off time is greatly shortened; the work efficiency of a power supply converter is improved. Meanwhile, a negative voltage driving voltage value can be set according to the circuit interference; the flexibility is high.

Description

The negative pressure drive circuit that Switching Power Supply and single supply are powered
Technical field
The present invention relates to power technique fields, drive electricity particularly to the negative pressure that a kind of Switching Power Supply and single supply are powered Road.
Background technology
Drive circuit is the core circuit in Switching Power Supply, and the interference in usual Switching Power Supply is larger, easily causes switch Pipe misleads, and causes switching tube to damage.At present, have part settling mode be using positive-negative power to drive circuitry so that Interference does not reach the threshold of switching tube conducting, can be prevented effectively from problems, but this mode needs to increase by a road circuit and is used for Auxiliary power supply, makes circuit complicated, high cost, is also unsatisfactory for electronic product miniaturization and requires.Also part settling mode is had to be to utilize The conduction voltage drop of diode, formed negative pressure, realize single supply power negative pressure drive, but this negative pressure value depend on series connection two poles Pipe number it is impossible to accurately control negative pressure drive magnitude of voltage, and, when needing negative pressure larger, need more two that connect Pole pipe, increased component number, equally exists the problem that circuit is complicated, more than electronic component.
Thus prior art could be improved and improves.
Content of the invention
In view of in place of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of Switching Power Supply and single supply supply The negative pressure drive circuit of electricity, enables generating positive and negative voltage and drives, improve the capacity of resisting disturbance of Switching Power Supply.
In order to achieve the above object, this invention takes technical scheme below:
The negative pressure drive circuit that a kind of single supply is powered, for controlling the metal-oxide-semiconductor in Switching Power Supply quickly to close in voltage reversal Disconnected, the grid of described negative pressure drive circuit and feeder ear, outside switch driving circuit and metal-oxide-semiconductor, the source electrode of described metal-oxide-semiconductor connects Ground, the drain electrode of metal-oxide-semiconductor is powered to late-class circuit for output voltage signal;Described negative pressure drive circuit includes Current amplifier mould Block, current limliting module and negative pressure Voltage stabilizing module;When the positive drive signal of switch driving circuit output, described Current amplifier module Forward drive signal is amplified, exports after current limliting module current limliting to negative pressure Voltage stabilizing module, processed by negative pressure Voltage stabilizing module voltage stabilizing Drive metal-oxide-semiconductor to open afterwards, control the electric capacity in negative pressure Voltage stabilizing module to charge simultaneously;When drive signal is reverse, described current limliting mould Block makes metal-oxide-semiconductor rapidly switch off, and realizes negative pressure and drives.
In the negative pressure drive circuit that described single supply is powered, described negative pressure Voltage stabilizing module includes electric capacity, the first diode And voltage regulation unit, the grid of one end connection metal-oxide-semiconductor of described electric capacity, the negative pole also by voltage regulation unit connection the first diode, The positive pole of the first diode connects the other end and the current limliting module of electric capacity.
In the negative pressure drive circuit that described single supply is powered, described voltage regulation unit include first resistor, second resistance and Reference voltage source, the positive pole of reference voltage source connects the grid of metal-oxide-semiconductor, connects the reference of reference voltage source also by second resistance Pole and one end of first resistor, the other end of described first resistor connects the negative pole of the first diode and the negative of reference voltage source Pole.
In the negative pressure drive circuit that described single supply is powered, described current limliting module includes 3rd resistor and the two or two pole Pipe, one end of described 3rd resistor connects the positive pole of the other end, the positive pole of the first diode and the second diode of electric capacity, described The other end of 3rd resistor connects the negative pole of described Current amplifier module and the second diode.
In the negative pressure drive circuit that described single supply is powered, described Current amplifier module includes first switch pipe and second Switching tube, the 1st end of described first switch pipe and the 1st end of second switch pipe are all connected with switch driving circuit, and described first opens The first end closing pipe connects feeder ear, the 3rd end of first switch pipe connect the 3rd end of second switch pipe, 3rd resistor another End and the negative pole of the second diode, the 2nd end ground connection of second switch pipe.
In the negative pressure drive circuit that described single supply is powered, described first switch pipe is NPN triode, second switch pipe For PNP triode.
In the negative pressure drive circuit that described single supply is powered, described first switch pipe links up metal-oxide-semiconductor, second switch for N Manage and link up metal-oxide-semiconductor for P.
A kind of Switching Power Supply, including metal-oxide-semiconductor, switch driving circuit and the as above negative pressure drive circuit described in any one, Described negative pressure drive circuit and the grid of feeder ear, switch driving circuit and metal-oxide-semiconductor, the source ground of described metal-oxide-semiconductor, metal-oxide-semiconductor Drain electrode for output voltage signal, late-class circuit is powered.
Compared to prior art, Switching Power Supply that the present invention provides and the negative pressure drive circuit that single supply is powered, wherein, bear Pressure drive circuit, for controlling the metal-oxide-semiconductor in Switching Power Supply to rapidly switch off in voltage reversal, described negative pressure drive circuit and confession The grid at electric end, outside switch driving circuit and metal-oxide-semiconductor, the source ground of described metal-oxide-semiconductor, the drain electrode of metal-oxide-semiconductor is used for exporting Voltage signal is powered to late-class circuit;Described negative pressure drive circuit includes Current amplifier module, current limliting module and negative pressure voltage stabilizing mould Block;When the positive drive signal of switch driving circuit output, forward drive signal is amplified by described Current amplifier module, through limit Export after flow module current limliting to negative pressure Voltage stabilizing module, drive metal-oxide-semiconductor to open after being processed by negative pressure Voltage stabilizing module voltage stabilizing, control simultaneously Electric capacity in negative pressure Voltage stabilizing module charges;When drive signal is reverse, described current limliting module makes metal-oxide-semiconductor rapidly switch off.The present invention When single supply is powered, generating positive and negative voltage is achieved by negative pressure drive circuit and drives so that drive circuit is more stable, anti-interference By force, and the turn-off time significantly shortens, improve the work efficiency of supply convertor.Meanwhile, the magnitude of voltage that negative pressure drives, can root Size according to circuit interference is configured, and motility is high.
Brief description
The module frame chart of the negative pressure drive circuit that the single supply that Fig. 1 provides for the present invention is powered.
The circuit theory diagrams of the negative pressure drive circuit that the single supply that Fig. 2 provides for the present invention is powered.
Specific embodiment
The present invention provides the negative pressure drive circuit that a kind of single supply is powered, for making the purpose of the present invention, technical scheme and effect Fruit is clearer, clear and definite, and the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.It should be appreciated that this place The specific embodiment of description, only in order to explain the present invention, is not intended to limit the present invention.
The negative pressure drive circuit that the present invention provides, realizes generating positive and negative voltage and drives when single supply is powered, and negative pressure driving Magnitude of voltage, can be configured according to the size of circuit interference, while improving turn-off speed, it is to avoid disturb the misleading bringing Logical.
Refer to Fig. 1, the negative pressure drive circuit that the single supply that the present invention provides is powered, open for controlling in voltage reversal The metal-oxide-semiconductor Q1 closing in power supply rapidly switches off, described negative pressure drive circuit and feeder ear, outside switch driving circuit and metal-oxide-semiconductor The grid of Q1, the source ground of described metal-oxide-semiconductor Q1, the drain electrode of metal-oxide-semiconductor Q1 is powered to late-class circuit for output voltage signal. Metal-oxide-semiconductor Q1 links up metal-oxide-semiconductor Q1 for N, and when its grid is for high level, conducting, grid are metal-oxide-semiconductor Q1 cut-off during low level.
Wherein, described negative pressure drive circuit includes Current amplifier module 10, current limliting module 20 and negative pressure Voltage stabilizing module 30;Electricity 1st end of stream amplification module 10 connects feeder ear DRV V+, the 2nd end connecting valve drive circuit of Current amplifier module 10, connects Receive the square wave driving signal of switch driving circuit output, the 3rd end of Current amplifier module 10 passes sequentially through current limliting module 20 and bears Pressure Voltage stabilizing module 30 connects the grid of metal-oxide-semiconductor Q1.
When the positive drive signal of switch driving circuit output, forward drive signal is put by described Current amplifier module 10 Greatly, export after current limliting module 20 current limliting to negative pressure Voltage stabilizing module 30, after being processed by negative pressure Voltage stabilizing module 30 voltage stabilizing, drive metal-oxide-semiconductor Q1 opens, and controls the electric capacity C1 in negative pressure Voltage stabilizing module 30 to charge simultaneously;When drive signal is reverse, described current limliting module 20 makes Metal-oxide-semiconductor Q1 rapidly switches off, that is, accelerate the turn-off speed of metal-oxide-semiconductor, reduces the loss of metal-oxide-semiconductor.
See also Fig. 2, in the negative pressure drive circuit of the present invention, described negative pressure Voltage stabilizing module 30 include electric capacity C1, First diode D1 and voltage regulation unit 301, one end of described electric capacity C1 connects the grid of metal-oxide-semiconductor Q1, also by voltage regulation unit 301 Connect the negative pole of the first diode D1, the positive pole of the first diode D1 connects the other end and the current limliting module 20 of electric capacity C1.Described Electric capacity C1 is used in the positive drive signal of switch driving circuit output, and electric capacity C1 charges, and accelerates forward drive current, and Voltage is set up, described voltage regulation unit 301 is used for stablizing the magnitude of voltage at electric capacity C1 two ends during driving.Described first diode D1 Backward voltage for when drive signal is reverse, preventing voltage regulation unit 301 from setting up is clamped.
Specifically, described voltage regulation unit 301 includes first resistor R1, second resistance R2 and reference voltage source U1, benchmark electricity The positive pole of potential source U1 connects the grid of metal-oxide-semiconductor Q1, connects the reference pole and first of reference voltage source U1 also by second resistance R2 One end of resistance R1, the other end of described first resistor R1 connects the negative pole of the first diode D1 and the negative of reference voltage source U1 Pole.The voltage at described electric capacity C1 two ends is together decided on by first resistor R1, second resistance R2 and reference voltage source U1.
Please continue to refer to Fig. 2, described current limliting module 20 includes 3rd resistor R3 and the second diode D2, described 3rd resistor One end of R3 connects the positive pole of the other end, the positive pole of the first diode D1 and the second diode D2 of electric capacity C1, described 3rd electricity The other end of resistance R3 connects the negative pole of described Current amplifier module 10 and the second diode D2.Described 3rd resistor R3 is used for limiting Forward drive current, adjusts actuating speed, it is to avoid concussion.Described second diode D2 is used for when driving voltage is reverse accelerating to close Disconnected speed, and the pressure drop of the first diode D1 is offset when driving voltage is reverse.
Described Current amplifier module 10 includes first switch pipe Q2 and second switch pipe Q3, and the of described first switch pipe Q2 1st end of 1 end and second switch pipe Q3 is all connected with switch driving circuit, and the first end of described first switch pipe Q2 connects power supply End, the 3rd end of first switch pipe Q2 connects the 3rd end, the other end of 3rd resistor R3 and second diode of second switch pipe Q3 The negative pole of D2, the 2nd end ground connection of second switch pipe Q3.
First switch pipe Q2 and second switch pipe Q3 is to pipe, can adopt audion, metal-oxide-semiconductor Q1, IC etc..Work as first switch When pipe Q2 and second switch pipe Q3 adopts audion, the 1st end of switching tube is the base stage of audion, and the 2nd end of switching tube is three The colelctor electrode of pole pipe, the 3rd end of switching tube is the emitter stage of audion.
Specifically, described first switch pipe Q2 is NPN triode, and second switch pipe Q3 is PNP triode, works as driving voltage When positive, first switch pipe Q2 conducting, second switch pipe Q3 cut-off, when driving voltage is reverse, first switch pipe Q2 cut-off, second Switching tube Q3 turns on.
Certainly, when first switch pipe Q2 and second switch pipe Q3 adopts metal-oxide-semiconductor Q1, the 1st end of switching tube is metal-oxide-semiconductor Q1's Grid, the 2nd end of switching tube is the drain electrode of metal-oxide-semiconductor Q1, and the 3rd end of switching tube is the source electrode of metal-oxide-semiconductor Q1.
Body ground, described first switch pipe Q2 links up metal-oxide-semiconductor Q1 for N, and second switch pipe Q3 links up metal-oxide-semiconductor Q1 for P, works as driving When voltage is positive, first switch pipe Q2 conducting, second switch pipe Q3 cut-off, when driving voltage is reverse, first switch pipe Q2 cut-off, Second switch pipe Q3 turns on.
In order to be better understood from the present invention, drive electricity below in conjunction with the negative pressure that Fig. 1 and Fig. 2 powers to the single supply of the present invention The operation principle on road is described in detail:
When switch driving circuit exports high level drive voltage signal(I.e. square wave driving signal mentioned above)When, first switch Pipe Q2 conducting, second switch pipe Q3 cut-off, high level drive voltage signal is through first switch pipe Q2(Through first switch pipe Q2's Base stage is to emitter stage)After amplification, then through 3rd resistor R3 current limliting, electric capacity C1 is charged, when the magnitude of voltage of electric capacity C1 reaches the one or two During the magnitude of voltage sum of pole pipe D1 conduction voltage drop and voltage regulation unit 301, the voltage at electric capacity C1 two ends keeps stable.Now, metal-oxide-semiconductor The magnitude of voltage that voltage between the GS of Q1 is equal to high level drive voltage signal deducts voltage and electric capacity in 3rd resistor R3 Voltage on C1, now metal-oxide-semiconductor Q1 conducting.
When switch driving circuit output low level drive voltage signal, first switch pipe Q2 cut-off, second switch pipe Q3 Conducting, described electric capacity C1 starts to discharge:Second diode D2 conducting, makes the short circuit of 3rd resistor R3, discharge current is through second switch The source electrode of pipe Q3 to metal-oxide-semiconductor Q1;I.e. the voltage reversal of electric capacity C1 is added to the source electrode of metal-oxide-semiconductor to grid(The voltage of the source electrode of metal-oxide-semiconductor For high level, the voltage of metal-oxide-semiconductor grid is low level), thus realizing the shutoff of metal-oxide-semiconductor it is achieved that the negative pressure of the grid of metal-oxide-semiconductor Drive.
It should be noted that because driving voltage is the grid being coupled to metal-oxide-semiconductor Q1 through electric capacity C1, therefore in electric capacity During C1 electric discharge, another part discharge current through the first diode D1, flows into voltage regulation unit 301, now the leading of the first diode D1 Logical pressure drop can be offset with the second diode D2 and conduction voltage drop.I.e., in metal-oxide-semiconductor Q1 shutdown moment, second switch pipe Q3 turns on, electricity The voltage holding C1 two ends can not be mutated.And due on electric capacity C1 voltage can not be mutated, negative pressure drive circuit will not be to MOS The switching speed of pipe Q1 produces impact.
Further, since the conduction voltage drop of the first diode D1 can be offset with the second diode D2 and conduction voltage drop, now bear Pressure value is exactly by voltage regulation unit 301(U1、R1、R2)The magnitude of voltage determining.In different application scenarios, metal-oxide-semiconductor Q1 is in the phase of shutoff Between negative pressure value have different requirements, than if any circuit turned off with negative 3V voltage, some circuit are turned off with bearing 5V, originally The voltage regulation unit of invention can be adjusted according to the needs of circuit(Real especially by setting first resistor and second resistance resistance Existing), there is considerable flexibility.
Described first diode D1, also by reverse shutoff, plays and prevents first resistor R1, second resistance R2 and base The effect of the diode clamp within reference voltage source U1 for the backward voltage that reference voltage source U1 sets up so that drive circuit more Stable, capacity of resisting disturbance is higher.
The negative pressure drive circuit powered based on above-mentioned single supply, the present invention correspondingly provides a kind of Switching Power Supply, including Metal-oxide-semiconductor, switch driving circuit and negative pressure drive circuit, described negative pressure drive circuit and feeder ear, switch driving circuit and metal-oxide-semiconductor Grid, the source ground of described metal-oxide-semiconductor, the drain electrode of metal-oxide-semiconductor is powered to late-class circuit for output voltage signal.Because this is negative Pressure drive circuit has been carried out above describing in detail, and here is omitted.
Compared with prior art, the invention has the advantages that:
1st, the negative pressure drive circuit that the single supply of the present invention is powered solves single supply and realizes generating positive and negative voltage driving problems, decreases Accessory power supply way, simplifies circuit, reduces power supply cost, and also avoid misleading of interference fringe, improves pass Disconnected speed, while reducing switching loss, improves reliability.
2nd, the present invention can achieve setting reverse drive voltages by several conventional electronic components, can be according to practical situation Select U1 R2 R3 parameter, to obtain stable magnitude of voltage, its motility is good.
3rd, present invention employs the conventional electronic component of minority, make power supply have the characteristics that high efficiency, reliable, inexpensive, On the premise of increasing little cost, greatly improve the performance of power supply, increased the market competitiveness.
It is understood that for those of ordinary skills, with technology according to the present invention scheme and its can send out Bright design in addition equivalent or change, and all these change or replace the guarantor that all should belong to appended claims of the invention Shield scope.

Claims (8)

1. the negative pressure drive circuit that a kind of single supply is powered, quick for controlling the metal-oxide-semiconductor in Switching Power Supply in voltage reversal Turn off, the grid of described negative pressure drive circuit and feeder ear, outside switch driving circuit and metal-oxide-semiconductor, the source electrode of described metal-oxide-semiconductor Ground connection, the drain electrode of metal-oxide-semiconductor is powered to late-class circuit for output voltage signal;It is characterized in that, described negative pressure drive circuit bag Include Current amplifier module, current limliting module and negative pressure Voltage stabilizing module;When the positive drive signal of switch driving circuit output, described Forward drive signal is amplified by Current amplifier module, exports to negative pressure Voltage stabilizing module, by negative pressure voltage stabilizing after current limliting module current limliting Module voltage stabilizing drives metal-oxide-semiconductor to open after processing, and controls the electric capacity in negative pressure Voltage stabilizing module to charge simultaneously;When drive signal is reverse When, described current limliting module makes metal-oxide-semiconductor rapidly switch off, and realizes negative pressure and drives.
2. single supply according to claim 1 is powered negative pressure drive circuit is it is characterised in that described negative pressure Voltage stabilizing module Including electric capacity, the first diode and voltage regulation unit, one end of described electric capacity connects the grid of metal-oxide-semiconductor, connects also by voltage regulation unit Connect the negative pole of the first diode, the positive pole of the first diode connects the other end and the current limliting module of electric capacity.
3. the negative pressure drive circuit that single supply according to claim 2 is powered is it is characterised in that described voltage regulation unit includes First resistor, second resistance and reference voltage source, the positive pole of reference voltage source connects the grid of metal-oxide-semiconductor, also by second resistance Connect the reference pole of reference voltage source and one end of first resistor, the other end of described first resistor connects the negative of the first diode Pole and the negative pole of reference voltage source.
4. the negative pressure drive circuit that single supply according to claim 3 is powered is it is characterised in that described current limliting module includes 3rd resistor and the second diode, one end of described 3rd resistor connects the other end of electric capacity, the positive pole of the first diode and the The positive pole of two diodes, the other end of described 3rd resistor connects the negative pole of described Current amplifier module and the second diode.
5. single supply according to claim 4 is powered negative pressure drive circuit is it is characterised in that described Current amplifier module Including first switch pipe and second switch pipe, the 1st end of described first switch pipe and the 1st end of second switch pipe are all connected with switching Drive circuit, the first end of described first switch pipe connects feeder ear, and the 3rd end of first switch pipe connects the of second switch pipe The negative pole at 3 ends, the other end of 3rd resistor and the second diode, the 2nd end ground connection of second switch pipe.
6. the negative pressure drive circuit that single supply according to claim 5 is powered is it is characterised in that described first switch pipe is NPN triode, second switch pipe is PNP triode.
7. the negative pressure drive circuit that single supply according to claim 5 is powered is it is characterised in that described first switch pipe is N links up metal-oxide-semiconductor, and second switch pipe links up metal-oxide-semiconductor for P.
8. a kind of Switching Power Supply, including metal-oxide-semiconductor and switch driving circuit it is characterised in that also including as any in claim 1-7 The grid of the negative pressure drive circuit described in, described negative pressure drive circuit and feeder ear, switch driving circuit and metal-oxide-semiconductor, institute State the source ground of metal-oxide-semiconductor, the drain electrode of metal-oxide-semiconductor is powered to late-class circuit for output voltage signal.
CN201611083955.3A 2016-11-30 2016-11-30 Switching power supply and single power supply-powered negative voltage driving circuit Pending CN106452024A (en)

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Application Number Priority Date Filing Date Title
CN201611083955.3A CN106452024A (en) 2016-11-30 2016-11-30 Switching power supply and single power supply-powered negative voltage driving circuit

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Application Number Priority Date Filing Date Title
CN201611083955.3A CN106452024A (en) 2016-11-30 2016-11-30 Switching power supply and single power supply-powered negative voltage driving circuit

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CN107094009A (en) * 2017-06-08 2017-08-25 北京智芯微电子科技有限公司 A kind of drive module of sic filed effect pipe
CN107681887A (en) * 2017-11-21 2018-02-09 四川巧夺天工信息安全智能设备有限公司 A kind of switching power circuit
CN108964425A (en) * 2018-07-04 2018-12-07 京信通信系统(中国)有限公司 Gan chip negative pressure control circuit and equipment
CN109687858A (en) * 2018-12-26 2019-04-26 深圳航天东方红海特卫星有限公司 A kind of satellite high voltage end PMOS driving circuit

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CN203788258U (en) * 2014-04-01 2014-08-20 佛山市顺德区和而泰电子科技有限公司 Novel IGBT/MOSFET driving circuit
CN203859674U (en) * 2014-03-05 2014-10-01 深圳市欣锐特科技有限公司 MOS tube negative voltage driving circuit and switch power source
CN105116804A (en) * 2015-08-21 2015-12-02 广东美的暖通设备有限公司 Negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and air conditioner

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JPH10257755A (en) * 1997-03-13 1998-09-25 Toyota Autom Loom Works Ltd Switching circuit for driving photocoupler
CN202524281U (en) * 2012-02-16 2012-11-07 江苏大学 Isolated rapid turn-off oxide field effect transistor (MOFET) driving circuit
CN203406774U (en) * 2013-04-25 2014-01-22 薛涛 Large-power MOSFET negative-voltage drive circuit
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107094009A (en) * 2017-06-08 2017-08-25 北京智芯微电子科技有限公司 A kind of drive module of sic filed effect pipe
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CN108964425A (en) * 2018-07-04 2018-12-07 京信通信系统(中国)有限公司 Gan chip negative pressure control circuit and equipment
CN109687858A (en) * 2018-12-26 2019-04-26 深圳航天东方红海特卫星有限公司 A kind of satellite high voltage end PMOS driving circuit
CN109687858B (en) * 2018-12-26 2023-06-20 深圳航天东方红海特卫星有限公司 High-voltage end PMOS drive circuit for satellite

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