CN101373965B - Switching circuit for power supply switch - Google Patents
Switching circuit for power supply switch Download PDFInfo
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- CN101373965B CN101373965B CN2008102246161A CN200810224616A CN101373965B CN 101373965 B CN101373965 B CN 101373965B CN 2008102246161 A CN2008102246161 A CN 2008102246161A CN 200810224616 A CN200810224616 A CN 200810224616A CN 101373965 B CN101373965 B CN 101373965B
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Abstract
The invention discloses a power-switch switching circuit, which comprises a field effect transistor and a control circuit, wherein, the field effect transistor is used for switching on or switching off under the control of a stepping control voltage, and comprises a grid electrode, a source electrode and a drain electrode; the grid electrode is connected with the stepping control voltage, the drain electrode is connected with an input terminal of a power supply, and the source electrode is connected with an output terminal of a load; the control circuit is used for synthesizing two control voltages which are input by the input terminal of the control circuit to form and output the stepping control voltage through the control of a logic control signal; the control circuit is connected with the grid electrode of the field effect transistor. In the power-switch switching circuit, the stepping control voltage is used for charging the grid electrode of the field effect transistor, surge current which is generated when the field effect transistor is conducted can be restrained through the control of the stepping control voltage, so the circuit works stably under the control of a power-switch, and devices are not easy to be damaged; in addition, because the circuit adopts one field effect transistor only, the cost is low and the volume is small.
Description
Technical field
The present invention relates to the mains switch control technology, particularly a kind of switching circuit for power supply switch belongs to the electroporation field.
Background technology
Switching circuit in brief, is exactly a kind of circuit of control circuit break-make, is generally used for controlling the break-make of power path, is decided the break-make of switch by the high-low level of control signal.The closing speed of the switch on the switching circuit is determined by ON-OFF control circuit usually.In addition, Fig. 1 is the structural representation of prior art switch switching circuit, switch switching circuit as shown in Figure 1, and in order to guarantee the power supply stability of output circuit, exporting a side at power supply has a large amount of storage capacitors usually.CL is the equivalent capacity of load circuit among the figure, is several thousand microfarads usually in high-power applications, and RL is the equivalent resistance of load circuit; The operating current that this circuit connects after the load should be U/RL; The moment that this contactor is opened; Electric current is U/ (Resr+Rs), and wherein Resr is the series equivalent resistance of the equivalent capacity of load circuit, is no more than 1 Europe usually; Rs is the resistance after the switch open conducting; Usually be no more than 1 Europe, because RL>> (Resr+Rs), be far longer than the normal operating current of circuit so open immediate current.The electric current of this unlatching moment is called surge current.
In practical application; Switch switching circuit is used semiconductor switch device usually; Wherein insulated-gate type metal oxide semiconductor field effect tube (Metal-0xide-Semiconductor Field EffectTransistor is hereinafter to be referred as MOSFET) is a kind of common semiconductor switch device.Fig. 2 is the principle schematic of prior art switch mosfet commutation circuit, and MOSFET has three pins to be respectively grid G, source S, drain D.When between GS not during making alive, the resistance between the DS is infinitely great, is equivalent to break off power path; Voltage between GS is greater than MOSFET cut-in voltage V
ThThe time, the resistance of the resistance between the DS reduces to tens milliohms fast, is equivalent to switch closure.ON-OFF control circuit is exactly a voltage of controlling the G pin according to control signal, to reach the effect of control circuit break-make.Cut-in voltage V
ThBe the intrinsic parameter of MOSFET device.
Fig. 3 is the structural representation of prior art switch mosfet commutation circuit, and is as shown in Figure 3, and circuit adopts control voltage U 1 to receive the grid of MOSFET through resistance R 1; When logic control signal is low level; Triode Q2 saturation conduction, the grid voltage of Q4 are zero, when logic control signal is high level; Triode Q2 ends, and control voltage U 1 is switched to the grid of MOSFET.
Fig. 4 is the grid voltage V of prior art MOSFET
GSConcern sketch map with source/drain interpolar change in current, as shown in Figure 4, represented the grid voltage V of MOSFET
GS, the electric current I between the source electrode D/ drain electrode S
DAnd MOSFET source-drain electrode voltage V
DSVariation relation, I
DThe electric current that flows through to the S utmost point for the D utmost point of MOSFET.Miller voltage V
MillerBe the voltage of stairstepping level in the grid voltage waveform of MOSFET, like among Fig. 4 3. shown in the flat site in stage.V
MillerBe the intrinsic constant level that forms by MOSFET self parameter when adopting constant current to gate charges, its size and MOSFET self relating to parameters.
In conjunction with Fig. 3 and Fig. 4, the opening process of MOSFET can be divided into 4 stages:
1.: driving voltage V
GSRise to V from 0
Th(2～4V), V
DSAnd I
DRemain unchanged;
2.: driving voltage V
GSFrom V
ThRise to V
Miller, V
DSRemain unchanged I
DRaise rapidly, produce surge current I
Inrush
3.: driving voltage V
GSKeep V
MillerConstant, I
DBe reduced to rated value gradually, V
DSFrom V
DSmaxBe reduced to 0;
4.: driving voltage V
GSContinue to rise to rated value, V
DSAnd I
DConstant.
Because circuit parameter generally designs according to rated operational current.The surge current of moment will impact all and be connected on the device on this path, and near signal is impacted, and for example the grid control signal to self causes interference, causes switch controlling signal constantly to vibrate.If this switching surge electric current is too big, also possibly cause the ground level fluctuation of this power supply, cause the logical device permanent damage on the circuit board.Limit this surge current thus and just become one of key index that guarantees circuit and equipment dependability.
Analyze the drive circuit of above-mentioned traditional MOSFET switch switching circuit, the maximum of surge current is relevant with the time in 2. stage, and in the circuit that is driven by control voltage U 1,2. the time in stage is very short.Size through adjustment resistance R 1 can be adjusted whole V
GSThe time that voltage waveform rises increases resistance R 1 and can increase the 2. time in stage, reduces the impact of maximum surge current.But do the inhibition DeGrain of surge current like this.And in the application of the load circuit of big electric capacity, surge current is still very big.So, consider that from the influence that circuit and power supply itself are caused the application of this method is very restricted.In addition, because the cost that this method inhibition surge current is paid is that the speed of entire circuit switch is postponed greatly, can not, high-speed switches such as for example dual power supply redundancy power supply satisfy application requirements in using.
Fig. 5 is the structural representation of the improved switch mosfet commutation circuit of prior art, and is as shown in Figure 5, and with two MOSFET parallel connections, concrete implementation method is following:
At first control the bigger MOSFET Q1 of cut-in voltage Sa conducting internal resistance, the electric capacity of late-class circuit is charged, utilize the bigger conducting resistance of MOSFET Q1 to suppress surge current; After a time, control cut-in voltage Sb opens the electric current that the less MOSFET Q2 of internal resistance provides operate as normal.Can find out that this method needs 2 groups of powerful MOSFET devices, circuit cost is relatively more expensive, and needs 2 control signals, the I/O port resource of waste controller, and in addition, the device volume of 2 groups of high-power MOSFETs is also bigger, is difficult for miniaturization.
Summary of the invention
The objective of the invention is provides a kind of switching circuit for power supply switch in order to solve above-mentioned defective of the prior art, with the generation of control surge current, makes circuit working stable, and device is not fragile, and circuit cost is low, volume is little.
For realizing above-mentioned purpose, the invention provides a kind of switching circuit for power supply switch, comprising:
Field-effect transistor; Be used under the control of grading control voltage, opening or turn-offing, said field-effect transistor comprises grid, source electrode and drain electrode, and said grid connects said grading control voltage; Said drain electrode connects power input, and said source electrode connects the load output;
Control circuit is used for the control through logic control signal, and with the synthetic said grading control voltage output of two-way control voltage of this control circuit input input, the output of said control circuit is connected with the grid of said field-effect transistor;
Wherein, Said two-way control voltage comprises the first control voltage and the second control voltage that is lower than the said first control voltage; The value of the said second control voltage is between the cut-in voltage and Miller voltage of said field-effect transistor; With value and the duration through the said second control voltage of control, the size and the duration of suppressing surge current;
Wherein, said control circuit comprises:
Logic control circuit is used to control the output of the synthetic said grading control voltage of said two-way control voltage, and input connects said logic control signal;
The gate charges control circuit; Be used to control the magnitude of voltage and the charging interval of said gate charges; Input is connected with the first control voltage, the second control voltage respectively, and output is connected with said grid, and said gate charges control circuit is connected with the output of said logic control circuit;
Electric capacity is used to control duration of the said second control voltage, and the discharge time of said grid, and an end of said electric capacity connects said gate charges control circuit, other end ground connection;
The grid charge/discharge control circuit; Control the grid discharge of said field-effect transistor according to the logic control signal of said logic control circuit output; Input is connected with the output of said logic control circuit, and said grid charge/discharge control circuit is connected with ground with said gate charges control circuit;
First resistance is used for the gate-to-source internal capacitance of said field-effect transistor is discharged, and is connected with source electrode with the grid of said field-effect transistor;
Said logic control circuit comprises:
Second resistance, an end connects said logic control signal;
First triode, its base stage connects the other end of said second resistance, and collector electrode connects said gate charges control circuit, emitting stage ground connection;
Said gate charges control circuit comprises:
The first grid charging circuit, it comprises: the 3rd resistance, an end of said the 3rd resistance connect the said first control voltage; The 4th resistance; One end of said the 4th resistance connects an end of said the 3rd resistance, and the other end of said the 4th resistance connects the collector electrode of said first triode, first diode; Anode connects the other end of said the 3rd resistance and an end of said electric capacity, and negative electrode connects the grid of said field-effect transistor;
The second grid charging circuit, it comprises: the 5th resistance, an end of said the 5th resistance connect the said second control voltage, and second diode, anode connect the other end of said the 5th resistance, and negative electrode connects the grid of said field-effect transistor;
Said grid charge/discharge control circuit comprises:
The 6th resistance, an end of said the 6th resistance connects the collector electrode of said first triode;
Second triode, its base stage connects the other end of said the 6th resistance, grounded emitter;
The 7th resistance, an end of said the 7th resistance connects the collector electrode of said second triode, and the other end of said the 7th resistance connects an end of said electric capacity;
The 8th resistance, an end of said the 8th resistance connects the collector electrode of said first triode;
The 3rd triode, its base stage connects the other end of said the 8th resistance, and collector electrode connects the anode of said second diode, grounded emitter.
Can know by technique scheme; Switching circuit for power supply switch of the present invention is through adopting the two-way control voltage synthetic grading control voltage of control circuit with input; And utilize synthetic grading control voltage that the grid of field-effect transistor is carried out the classification charging; The surge current that control through this grading control voltage produces in the time of can reaching the conducting of suppressed field effect transistor makes mains switch control circuit working down stablize, and device is not fragile; And because this circuit only adopts a field-effect transistor, so cost is low, volume is little.
Description of drawings
Fig. 1 is the structural representation of prior art switch switching circuit;
Fig. 2 is the principle schematic of prior art switch mosfet commutation circuit;
Fig. 3 is the structural representation of prior art switch mosfet commutation circuit;
Fig. 4 is the grid voltage V of prior art MOSFET
GSConcern sketch map with source/drain interpolar change in current;
Fig. 5 is the structural representation of the improved switch mosfet commutation circuit of prior art;
Fig. 6 is the structural representation of switching circuit for power supply switch first embodiment of the present invention;
Fig. 7 is grid voltage waveform and the source/drain current waveform sketch map of the MOSFET of switching circuit for power supply switch first embodiment of the present invention;
Fig. 8 is the structural representation of switching circuit for power supply switch second embodiment of the present invention;
Fig. 9 is another structural representation of switching circuit for power supply switch second embodiment of the present invention.
Embodiment
Through accompanying drawing and embodiment, technical scheme of the present invention is done further detailed description below.
Surge current problem when the present invention makes field-effect transistors (MOSFET) as mains switch in order to solve; On the control circuit that original control mains switch switches; Increased by one tunnel control voltage; The control of the control voltage that the grid voltage waveform when making the MOSFET unlatching can be increased newly, thus surge current suppressed.Suppress surge current and will reduce the device damage on the power path, reduce the impact that surge current causes power supply; Reduce the interference of surge current, prevent crosstalking of peripheral circuits, and chip receives the intensity of the impact of induced voltage or electric current around reducing peripheral circuits; Suppress surge current and can accelerate the switch speed of high-power hot plug power supply, satisfy high-power hot plug power supply fast response time.
Fig. 6 is the structural representation of switching circuit for power supply switch embodiment one of the present invention, and Fig. 7 is grid voltage waveform and the source/drain current waveform sketch map of the MOSFET of switching circuit for power supply switch first embodiment of the present invention.As shown in Figure 6; Switching circuit for power supply switch comprises: field-effect transistor Q4; Can under the control of grading control voltage, open or turn-off, this field-effect transistor Q4 comprises grid G, source S and drain D, and grid G connects grading control voltage; Drain D connects power input, and source S connects the load output; Control circuit 100 can be through the control of logic control signal, and with the synthetic tapping voltage output of two-way control voltage U 1 and U2 of this control circuit 100 inputs input, the output of control circuit 100 is connected with the grid G of field-effect transistor Q4.
Its course of work is: the grading control voltage that two-way control voltage U 1 and U2 can synthesize single channel through control circuit 100 is applied to the grid of MOSFET, and is as shown in Figure 7 by the grid voltage waveform of the synthetic MOSFET of control circuit 100, has the inhibition electric current I
DEffect, wherein, I
InrushBe the surge current of conventional MOS FET power switch circuit, I '
InrushSurge current for switching circuit for power supply switch of the present invention.
Through grid voltage waveform and the source/drain current waveform of MOSFET as shown in Figure 7, can realize controlling the I of MOSFET
DMaximum, thereby reach the purpose that suppresses surge current.
Fig. 8 is the structural representation of switching circuit for power supply switch second embodiment of the present invention; As shown in Figure 8; Comprise: field-effect transistor Q4, wherein, control circuit 100 comprises: logic control circuit 11; Can control the output of the synthetic grading control voltage of two-way control voltage U 1 and U2, input connects logic control signal; Gate charges control circuit 12; Can control the magnitude of voltage and the charging interval of gate charges; Input is controlled voltage U 2 with the first control voltage U 1, second respectively and is connected, and output is connected with grid, and gate charges control circuit 12 is connected with the output of logic control circuit 11; Capacitor C, the duration of the control second control voltage U 2, and the discharge time of grid, an end of capacitor C connects gate charges control circuit 12, other end ground connection; Grid charge/discharge control circuit 13; Grid discharge according to the logic control signal controlling filed effect transistor of logic control circuit 11 output; Input is connected with the output of logic control circuit 11, and grid charge/discharge control circuit 13 is connected with ground with gate charges control circuit 12; First resistance R 1 is discharged to the gate-to-source internal capacitance of field-effect transistor Q4, is connected with source electrode with the grid of field-effect transistor Q4.
In this embodiment, Fig. 9 is another structural representation of switching circuit for power supply switch second embodiment of the present invention, and as shown in Figure 9, the structure more specifically of power switch circuit is:
Gate charges control circuit 12 comprises: the first grid charging circuit, and it comprises: an end of the 3rd resistance R 3, the three resistance R 3 connects the first control voltage U 1; The 4th resistance R 4; One end of the 4th resistance R 4 connects an end of the 3rd resistance R 3, and the other end of the 4th resistance R 4 connects the collector electrode c of the first triode Q1, the first diode D1; Anode connects the other end of the 3rd resistance R 3 and an end of capacitor C, and negative electrode connects the grid G of MOSFETQ4; The second grid charging circuit, it comprises: an end of the 5th resistance R 5, the five resistance R 5 connects the second control voltage U, 2, the second diode D2, and anode connects the other end of the 5th resistance R 5, and negative electrode connects the grid of MOSFETQ4.
In this gate charges control circuit 12, the value of the second control voltage U 2 is at the cut-in voltage V of MOSFETQ4
ThWith Miller voltage V
MillerBetween, the second control voltage U 2 independently voltage source provides, also can be from the first control voltage U 1 minute voltage.
Grid charge/discharge control circuit 13 comprises: an end of the 6th resistance R 6, the six resistance R 6 connects the collector electrode c of the first triode Q1; The second triode Q2, its base stage b connects the other end of the 6th resistance R 6, emitter e ground connection; One end of the 7th resistance R 7, the seven resistance R 7 connects the collector electrode c of the second triode Q2, and the other end of the 7th resistance R 7 connects an end of capacitor C; One end of the 8th resistance R 8, the eight resistance R 8 connects the collector electrode c of the first triode Q1; The 3rd triode Q3, its base stage b connects the other end of the 8th resistance R 8, and collector electrode c connects the anode of the second diode D2, emitter e ground connection.
Wherein, logic control signal is produced by logic controller or on-off controller.
The concrete course of work of circuit shown in Figure 9 is:
At first need choose the parameter value of setting the critical elements in the circuit among above-mentioned Fig. 9.Choose the magnitude of voltage of control voltage U 1 and U2.From the above, the magnitude of voltage of U2 voltage should be set in cut-in voltage V
ThWith Miller voltage V
MillerBetween, need choose concrete level height according to the big or small correspondence of the surge current of required control simultaneously.U2 is the closer to V
MillerVoltage, conducting surge current value is just big more, on the contrary U2 is the closer to V
Th, conducting surge current value is just more little.The duration of U2 is equivalent to the controlled time of surge current, and the size of this time is relevant with the parameter product R3*C of R3 and C, and R3*C is big more, then the duration long more, otherwise the duration is short more.U1 and U2 are the two-way control voltage signal in order to the grading control voltage of synthetic MOSFETQ4, and U2 voltage is lower than U1 voltage, so U2 can realize through the bleeder circuit of U1, also can adopt the different voltages with different source respectively as the supply voltage of U1 and U2.Logic control signal can be logic control device output control, also can be the signal controlling of on-off controller output.MOSFETQ4 has been the MOSFET of on-off action, specifies logic control signal below and how to control the MOSFET break-make.Detailed process is following:
When wanting the mains switch MOSFET Q4 of opening power current supply circuit, as shown in Figure 9, logic control signal output high level; The Q1 conducting, Q2 and Q3 end, and U1 gives the gate charges of Q4 through R3 and D1 loop; Because the existence of capacitor C, therefore, the voltage of the anode of D1 is slowly to rise; Simultaneously, the gate charges that U2 also gives Q4 through R5 and D2 loop because the U2 loop voltage rises faster than U1, is therefore opened 0～t1 stage of moment, and as shown in Figure 7, D1 oppositely turn-offs, the D2 forward conduction, and therefore, the grid voltage of Q4 approaches the magnitude of voltage of U2.
Along with U1 passes through the charging of R3 to C, the voltage of the anode of D1 constantly raises, after this section time-delay of t1～t2; Because the anode voltage of D1 will be higher than the cathode voltage U2 of D1, D1 is with conducting, at this moment; D2 ends, and the grid voltage of Q4 rises gradually, is charged to the U1 level up to capacitor C; The grid voltage of Q4 will approach the magnitude of voltage of U1, and the grid voltage of Q4 has just been accomplished the process of the classification unlatching of a Q4 to this.
Wherein, the size of R5 has determined the time of the 0～t1 section among Fig. 7; The value of charge constant R3*C has determined the time of the t1 among Fig. 7～t2 section; The constantly later waveform of t2 is by the charging slope decision of R3, and the charging slope is meant the gradient of that section oblique line between U2 and the U1, and relevant with the resistance of R3, the resistance of R3 is more little, and the gradient of this oblique line is just big more; The alive size of grid institute of last Q4 equal first control voltage U 1 size.The grid voltage waveform of Fig. 7 just can the complete realization through circuit as shown in Figure 9.
When needing the mains switch MOSFET Q4 of power cutoff current supply circuit, the logic control signal output low level, this moment, Q1 ended; Q2 and Q3 conducting; C discharges through R7, and R7 is used for the discharging current of control capacitance C, avoids Q2 to burn because discharging current is excessive; R1 also is the discharge resistance of the gate-to-source internal capacitance of MOSFETQ4 simultaneously, guarantees the quick shutoff of MOSFETQ4.
The gate drive voltage waveform of MOSFET in the switching circuit for power supply switch that the present invention proposes is as shown in Figure 7, has following characteristic:
(1) level of grid voltage comprises a stairstepping level at least, and this stairstepping level equals to control voltage U 2.Therefore, the size of this notch cuttype level is by 2 decisions of control voltage U.The size of control voltage U 2 needs between the grid cut-in voltage and Miller voltage of MOSFET.
(2) the maximum I ' of downtrod surge current
InrushThe corresponding I of amplitude by control voltage U 2
DConfirm.The amplitude that increases U2 can increase I '
InrushOtherwise, reduce I '
Inrush
(3) duration of control voltage U 2 has determined surge current I '
InrushDuration.
The switching circuit for power supply switch that provides according to the foregoing description; The present invention can realize accurately controlling the maximum surge current of switching circuit for power supply switch; And the duration of control maximum surge current, adopt switching circuit for power supply switch of the present invention can also improve the switch speed of hot plug power supply, realize a kind of accurate through only increasing a triode and several resistance; The circuit that can effectively suppress high-power hot plug power supply surge impact, and cost is low, volume is little.
What should explain at last is: above embodiment is only in order to technical scheme of the present invention to be described but not limit it; Although the present invention has been carried out detailed explanation with reference to preferred embodiment; Those of ordinary skill in the art is to be understood that: it still can make amendment or be equal to replacement technical scheme of the present invention, also can not make amended technical scheme break away from the spirit and the scope of technical scheme of the present invention and these are revised or be equal to replacement.
Claims (3)
1. a switching circuit for power supply switch is characterized in that, comprising:
Field-effect transistor; Be used under the control of grading control voltage, opening or turn-offing, said field-effect transistor comprises grid, source electrode and drain electrode, and said grid connects said grading control voltage; Said drain electrode connects power input, and said source electrode connects the load output;
Control circuit is used for the control through logic control signal, and with the synthetic said grading control voltage output of two-way control voltage of this control circuit input input, the output of said control circuit is connected with the grid of said field-effect transistor;
Wherein, Said two-way control voltage comprises the first control voltage and the second control voltage that is lower than the said first control voltage; The value of the said second control voltage is between the cut-in voltage and Miller voltage of said field-effect transistor; With value and the duration through the said second control voltage of control, the size and the duration of suppressing surge current;
Wherein, said control circuit comprises:
Logic control circuit is used to control the output of the synthetic said grading control voltage of said two-way control voltage, and input connects said logic control signal;
The gate charges control circuit; Be used to control the magnitude of voltage and the charging interval of said gate charges; Input is connected with the first control voltage, the second control voltage respectively, and output is connected with said grid, and said gate charges control circuit is connected with the output of said logic control circuit;
Electric capacity is used to control duration of the said second control voltage, and the discharge time of said grid, and an end of said electric capacity connects said gate charges control circuit, other end ground connection;
The grid charge/discharge control circuit; Control the grid discharge of said field-effect transistor according to the logic control signal of said logic control circuit output; Input is connected with the output of said logic control circuit, and said grid charge/discharge control circuit is connected with ground with said gate charges control circuit;
First resistance is used for the gate-to-source internal capacitance of said field-effect transistor is discharged, and is connected with source electrode with the grid of said field-effect transistor;
Said logic control circuit comprises:
Second resistance, an end connects said logic control signal;
First triode, its base stage connects the other end of said second resistance, and collector electrode connects said gate charges control circuit, emitting stage ground connection;
Said gate charges control circuit comprises:
The first grid charging circuit, it comprises: the 3rd resistance, an end of said the 3rd resistance connect the said first control voltage; The 4th resistance; One end of said the 4th resistance connects an end of said the 3rd resistance, and the other end of said the 4th resistance connects the collector electrode of said first triode, first diode; Anode connects the other end of said the 3rd resistance and an end of said electric capacity, and negative electrode connects the grid of said field-effect transistor;
The second grid charging circuit, it comprises: the 5th resistance, an end of said the 5th resistance connect the said second control voltage, and second diode, anode connect the other end of said the 5th resistance, and negative electrode connects the grid of said field-effect transistor;
Said grid charge/discharge control circuit comprises:
The 6th resistance, an end of said the 6th resistance connects the collector electrode of said first triode;
Second triode, its base stage connects the other end of said the 6th resistance, grounded emitter;
The 7th resistance, an end of said the 7th resistance connects the collector electrode of said second triode, and the other end of said the 7th resistance connects an end of said electric capacity;
The 8th resistance, an end of said the 8th resistance connects the collector electrode of said first triode;
The 3rd triode, its base stage connects the other end of said the 8th resistance, and collector electrode connects the anode of said second diode, grounded emitter.
2. switching circuit for power supply switch according to claim 1 is characterized in that, the said second control voltage is the dividing potential drop of the said first control voltage.
3. switching circuit for power supply switch according to claim 1 is characterized in that, said logic control signal is produced by logic controller or on-off controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102246161A CN101373965B (en) | 2008-10-21 | 2008-10-21 | Switching circuit for power supply switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102246161A CN101373965B (en) | 2008-10-21 | 2008-10-21 | Switching circuit for power supply switch |
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| CN101373965A CN101373965A (en) | 2009-02-25 |
| CN101373965B true CN101373965B (en) | 2012-01-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102340297B (en) * | 2010-07-19 | 2013-06-26 | 东莞钜威新能源有限公司 | Switch driving circuit |
| KR101860860B1 (en) * | 2011-03-16 | 2018-07-02 | 삼성디스플레이 주식회사 | Organic Light Emitting Display and Driving Method Thereof |
| CN105824382B (en) * | 2015-01-08 | 2018-11-09 | 鸿富锦精密工业(武汉)有限公司 | The electronic device of USB power supply circuits and the application circuit |
| US9960588B2 (en) * | 2015-03-19 | 2018-05-01 | Infineon Technologies Ag | Power switch device |
| US9467136B1 (en) * | 2015-10-05 | 2016-10-11 | Monolithic Power Systems, Inc. | Monolithic integrated circuit switch device with output current balancing for parallel-connection |
| CN107222177B (en) * | 2017-05-08 | 2020-06-16 | 西安电子工程研究所 | Amplifier drain power supply voltage switching circuit |
| CN107968641B (en) * | 2017-12-29 | 2020-12-01 | 生迪智慧科技有限公司 | Load switch circuit, battery pack and multi-power-supply system |
| TWM595928U (en) | 2020-02-18 | 2020-05-21 | 力智電子股份有限公司 | Power switch circuit |
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